阅读说明：本技术 用于制造显示设备的设备和方法 (Apparatus and method for manufacturing display device ) 是由 韩尚辰 朴俊河 许明洙 卢喆来 郑成镐 于 2019-06-20 设计创作，主要内容包括：提供了用于制造显示设备的设备和方法。所述设备包括：腔室,被构造成在其中容纳第一显示基底和第二显示基底；沉积源,位于腔室中并包括多个坩埚,所述多个坩埚被构造成移动并向第一显示基底或第二显示基底供应至少两种沉积材料；掩模组件,布置在第一显示基底或第二显示基底与沉积源之间；以及挡板部分,布置在掩模组件与沉积源之间并被构造成控制从所述多个坩埚供应的所述至少两种沉积材料的量。(An apparatus and method for manufacturing a display apparatus are provided, the apparatus including a chamber configured to receive an th display substrate and a second display substrate therein, a deposition source located in the chamber and including a plurality of crucibles configured to move and supply at least two deposition materials to a th display substrate or the second display substrate, a mask assembly disposed between the th display substrate or the second display substrate and the deposition source, and a shutter portion disposed between the mask assembly and the deposition source and configured to control amounts of the at least two deposition materials supplied from the plurality of crucibles.)

an apparatus for manufacturing a display apparatus, the apparatus comprising:

a chamber configured to accommodate the th display substrate and the second display substrate therein;

a deposition source located in the chamber and including a plurality of crucibles configured to move and supply at least two deposition materials to the th display substrate or the second display substrate;

a mask assembly disposed between the th display substrate or the second display substrate and the deposition source, and

a shutter portion disposed between the mask assembly and the deposition source and configured to control amounts of the at least two deposition materials supplied from the plurality of crucibles.

2. The apparatus of claim 1, wherein the th display substrate and the second display substrate are arranged perpendicular to a lower surface of the chamber.

3. The apparatus of claim 2, wherein the th display substrate and the second display substrate are arranged to face each other in the chamber.

4. The apparatus of claim 1, wherein the flapper portion is configured to perform a linear motion.

5. The apparatus of claim 1, wherein the baffle portion is disposed adjacent to each of the plurality of crucibles and is configured to perform a pivoting motion.

6. The apparatus of claim 1, further comprising an angle limiting plate disposed in the deposition source and configured to limit an ejection angle of deposition material ejected from at least of the plurality of crucibles.

7. The apparatus of claim 1, wherein the deposition source is configured to perform linear motion in the chamber.

an apparatus for manufacturing a display apparatus, the apparatus comprising:

a chamber configured to accommodate the th display substrate and the second display substrate therein;

a deposition source located in the chamber and including a plurality of crucibles configured to move and supply at least two deposition materials to the th display substrate or the second display substrate;

a mask assembly disposed between the th display substrate or the second display substrate and the deposition source;

a plurality of deposition material supply portions respectively connected to the plurality of crucibles and configured to supply a deposition material to each of the plurality of crucibles individually; and

a cutting part disposed between each of the plurality of crucibles and each of the plurality of deposition material supply parts and configured to control an amount of deposition material supplied from each of the plurality of deposition material supply parts to each of the plurality of crucibles.

9. The apparatus of claim 8, wherein the th display substrate and the second display substrate are arranged perpendicular to a lower surface of the chamber.

10, a method of manufacturing a display device, the method comprising:

arranging th and second display substrates in the chamber;

arranging a mask assembly to correspond to each of the th display substrate and the second display substrate;

aligning a mask assembly corresponding to of the th display substrate and the second display substrate with the of the th display substrate and the second display substrate, and

supplying at least two deposition materials to the mask assembly through a deposition source including a plurality of crucibles, and depositing the at least two deposition materials having passed through the mask assembly on the of the th display substrate and the second display substrate,

wherein the amounts of the at least two deposition materials are adjusted by controlling the amount of the deposition material ejected from each of the plurality of crucibles by the shutter portion or by controlling the amount of the deposition material supplied to each of the plurality of crucibles by the cutoff portion.

11. The method of claim 10, wherein the deposition material is deposited on at least of the th display substrate and the second display substrate arranged perpendicular to a lower surface of the chamber.

12. The method of claim 11, wherein the th display substrate and the second display substrate are arranged to face each other.

13. The method of claim 10, wherein the shutter portion is disposed between the mask assembly and the deposition source and performs a linear motion.

14. The method of claim 10, wherein a plurality of deposition material supply portions for individually supplying a deposition material to each of the plurality of crucibles are connected to the deposition source, and the cutoff portion controls an amount of the deposition material supplied from each of the plurality of deposition material supply portions to each of the plurality of crucibles.

15. The method of claim 10, wherein the deposition source performs linear motion.

16. The method of claim 10, wherein another of the display substrates and the second display substrate are positioned in alignment with the mask assembly while the at least two deposition materials are deposited on the of the display substrates and the second display substrate.

17. The method of claim 10, wherein the baffle portion is disposed adjacent to the deposition source and performs a rotational motion.

18. The method of claim 10, wherein at least of the plurality of crucibles have a limited spray angle of deposition material sprayed therefrom.

19. The method of claim 10, wherein the at least two deposition materials are deposited on another of the th and second display substrates by changing an orientation of the deposition source.

20. The method of claim 10, wherein the at least two deposition materials are different materials from each other.

Technical Field

or more embodiments relate to an apparatus and method, and more particularly, to an apparatus for manufacturing a display apparatus and a method of manufacturing a display apparatus.

Background

Tablet Personal Computers (PCs) have been used generally as mobile electronic devices, in addition to compact electronic devices such as mobile phones.

As other components for driving a display device have been miniaturized, the size of the display device in an electronic apparatus has been gradually increased, and a structure capable of bending the display device in a flat state to degrees has been developed.

Various equipment may be used to manufacture the display device. The intermediate layer may be fabricated by using a variety of deposition materials. In this case, the deposition order of the deposition materials, the concentration of the deposition materials during stacking, and the mixing ratio between the various deposition materials may greatly affect the performance of the display device.

Disclosure of Invention

or more embodiments include an apparatus for manufacturing a display apparatus and a method of manufacturing a display apparatus.

Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments.

According to or more embodiments, apparatuses for manufacturing a display device include a chamber, a deposition source, a mask assembly, and a baffle portion, the chamber may be configured to accommodate a th display substrate and a second display substrate therein, the deposition source may be located in the chamber and include a plurality of crucibles configured to move and supply at least two deposition materials to the th display substrate or the second display substrate, the mask assembly may be disposed between the th display substrate or the second display substrate and the deposition source, the baffle portion may be disposed between the mask assembly and the deposition source, and may be configured to control amounts of the at least two deposition materials supplied from the plurality of crucibles.

The th display substrate and the second display substrate may be disposed perpendicular to a lower surface of the chamber.

The th display substrate and the second display substrate may be disposed to face each other in the chamber.

The flapper portion may be configured to perform a linear motion.

The baffle portion may be disposed adjacent to each of the plurality of crucibles and may be configured to perform a pivoting motion.

The apparatus may further include an angle limiting plate disposed in the deposition source and configured to limit an ejection angle of the deposition material ejected from at least of the plurality of crucibles.

The deposition source may be configured to perform linear motion in the chamber.

According to or more embodiments, an apparatus for manufacturing a display device includes a chamber, a deposition source, a mask assembly, a plurality of deposition material supply portions, and a cutting portion, the chamber may be configured to accommodate therein a th display substrate and a second display substrate, the deposition source may be located in the chamber and include a plurality of crucibles configured to move and supply at least two deposition materials to the th display substrate or the second display substrate.

The th display substrate and the second display substrate may be disposed perpendicular to a lower surface of the chamber.

According to or more embodiments, methods of manufacturing display devices include arranging a th display substrate and a second display substrate in a chamber, arranging a mask assembly to correspond to each of a th display substrate and the second display substrate, aligning a mask assembly corresponding to of the th display substrate and the second display substrate with the ones of the th display substrate and the second display substrate, supplying at least two deposition materials to the mask assembly by a deposition source including a plurality of crucibles, enabling the at least two deposition materials that have passed through the mask assembly to be deposited on the ones of the th display substrate and the second display substrate, adjusting an amount of the at least two deposition materials by controlling an amount of the deposition material ejected from each of the plurality of crucibles by a shutter portion or by controlling an amount of the deposition material supplied to each of the plurality of crucibles by a cutoff portion.

The deposition material may be deposited on at least of the th display substrate and the second display substrate arranged perpendicular to the lower surface of the chamber.

The th display substrate and the second display substrate may be disposed to face each other.

The shutter portion may be disposed between the mask assembly and the deposition source, and may perform a linear motion.

A plurality of deposition material supply portions for individually supplying a deposition material to each of the plurality of crucibles may be connected to the deposition source. The cutoff portion may control an amount of the deposition material supplied from each of the plurality of deposition material supply portions to each of the plurality of crucibles.

The deposition source may perform a linear motion.

While the at least two deposition materials are deposited on the of the th and second display substrates, another of the th and second display substrates may be aligned with the mask assembly.

The baffle portion may be disposed adjacent to the deposition source and may perform a rotational motion.

At least of the plurality of crucibles may have a limited spray angle of deposition material sprayed therefrom.

The at least two deposition materials may be deposited on another of the th and second display substrates by changing the direction of the deposition sources.

The at least two deposition materials may be different materials from each other.

Drawings

These and/or other aspects will become apparent and more readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

fig. 1 is a plan view of an apparatus for manufacturing a display apparatus according to an embodiment;

FIG. 2 is a cross-sectional view of an th display substrate, a second display substrate, a deposition source, a mask assembly, and a baffle plate portion disposed in the deposition chamber of FIG. 1;

FIGS. 3A, 3B and 3C are plan views illustrating the operation of the deposition source and the shutter portion of FIG. 2;

fig. 4 is a plan view illustrating a portion of an apparatus for manufacturing a display apparatus according to another embodiment;

fig. 5 is a cross-sectional view illustrating portions of the apparatus for manufacturing a display apparatus of fig. 4;

fig. 6 is a cross-sectional view illustrating a portion of an apparatus for manufacturing a display apparatus according to another embodiment;

fig. 7 is a cross-sectional view illustrating a portion of an apparatus for manufacturing a display apparatus according to another embodiment;

FIG. 8 is a plan view of a display device manufactured by the apparatus for manufacturing a display device shown in of FIGS. 1, 4, 6, and 7, and

fig. 9 is a sectional view taken along line IX-IX of fig. 8.

Detailed Description

While the disclosure is susceptible to various modifications and alternative embodiments, the embodiments will be shown in the drawings and will be described in detail in the written description. However, it is not intended to limit the present disclosure to the specific mode of practice, and it will be understood that all changes, equivalents, and substitutions that do not depart from the spirit and technical scope of the present disclosure are included in the present disclosure. In the description of the present disclosure, some detailed explanations of the prior art are omitted when it is considered that they may unnecessarily obscure the essence of the present disclosure.

Hereinafter, the present disclosure will be described in detail by explaining the disclosed embodiments with reference to the accompanying drawings. Like reference numerals in the drawings denote like elements, and redundant description is omitted.

Although such terms as "," "second," etc. may be used to describe various components, such components are not limited to the above terms .

As used herein, the singular forms "" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.

it will be further understood that the term "comprises" and variations thereof as used herein, specify the presence of stated features or components, but do not preclude the presence or addition of or more other features or components.

It will be understood that when a layer, region or component is referred to as being "formed on" another layer, region or component, it can be formed directly or indirectly on the other layer, region or component.

The size of components in the drawings may be exaggerated for convenience of explanation. In other words, since the size and thickness of components in the drawings are arbitrarily illustrated for convenience of description, the following embodiments are not limited thereto.

When particular embodiments may be practiced differently, the specific process sequences may be performed in an order different than that described. For example, two consecutively described processes may be performed substantially simultaneously, or in an order reverse to the order described.

It will be understood that when a layer, region or component is referred to as being "connected to" another layer, region or component, it can be directly connected to the other layer, region or component, or can be indirectly connected to the other layer, region or component via an intervening layer, region or component.

Fig. 1 is a plan view of an apparatus 100 for manufacturing a display device according to an embodiment fig. 2 is a sectional view of an th display substrate D1, a second display substrate D2, a deposition source 132, a mask assembly 134, and a shutter portion 137 disposed in a deposition chamber of fig. 1 fig. 3A to 3C are plan views illustrating operations of the deposition source 132 and the shutter portion 137 of fig. 2.

Referring to fig. 1 to 3C, the apparatus 100 for manufacturing a display device may include a loading part 110, a transfer part 120, a deposition part 130, a connection part 140, an unloading part 160, and a sensor part 170.

The loading part 110 may receive at least of a plurality of display substrates (not shown) supplied from the outside, in this state, the display substrates may be received in the loading part 110 after the pressure of the loading part 110 is maintained to be the same as the atmospheric pressure, when the display substrates are moved to the transfer part 120, the internal pressure of the loading part 110 may be maintained to be the same as the internal pressure of the transfer part 120.

The transfer part 120 may move the display substrate from the loading part 110 to the deposition part 130. In this state, the transfer part 120 may move the display substrate in various ways. For example, the apparatus 100 for manufacturing a display device may be provided with a shuttle that is movable inside the apparatus 100 for manufacturing a display device, and the display substrate may be moved by being received on the shuttle.

In another embodiment, the transport section 120 may include a robotic arm 121 and move the display substrate, the display substrate being held on the robotic arm 121 in another embodiment, the apparatus 100 for manufacturing display devices may move the display substrate by using a shuttle that moves between components of the apparatus 100 for manufacturing display devices and the robotic arm 121 disposed in the transport section 120.

In this state, the apparatus 100 for manufacturing a display apparatus is not limited to the above structure, and the display substrate may be moved by various apparatuses and structures. In the following description, for convenience of explanation, a case where the apparatus 100 for manufacturing the display device includes the robot arm 121 and the shuttle is mainly described in detail.

The deposition part 130 may be connected to the transfer part 120, and in the deposition part 130, a display substrate is accommodated and deposition may be performed on the display substrate. In this state, the deposition part 130 may include a plurality of deposition parts connected to the transfer part 120. In each deposition portion 130, the same deposition material may be deposited on the display substrate, or different deposition materials may be deposited on the display substrate.

The deposition part 130 may include a chamber 131, a deposition source 132, a deposition source driving part 133, a mask assembly 134, a substrate holder 135, a mask holder 136, a shutter part 137, a vision part 138, and a pressure adjusting part 139.

The chamber 131 may have a space therein the chamber 131 may be directly connected to the transfer part 120 or connected to the transfer part 120 via another separate chamber in the following description, mainly the case where the chamber 131 is directly connected to the transfer part 120 is described in detail for convenience of explanation, a portion of the chamber 131 connected to the transfer part 120 may be opened.

In this state, a gate valve (not shown) is provided at the open portion of the chamber 131 to selectively open or close the open portion of the chamber 131. the th display substrate D1 and the second display substrate D2 may be disposed in the chamber 131. in this case, the th display substrate D1 and the second display substrate D2 may be disposed to face each other, and the th display substrate D1 and the second display substrate D2 may be disposed to be perpendicular to the lower surface 131a of the chamber 131. specifically, the th display substrate D1 and the second display substrate D2 may be disposed upright in the chamber 131 in a height direction of the chamber 131.

In this state, the deposition source 132 may be disposed in the chamber 131. of the display substrates D1 and D2 may be moved with respect to . for example, the th display substrate D1 and/or the second display substrate D2 may remain not moved when the deposition source 132 is linearly moved. in another embodiment, the th display substrate D1 and/or the second display substrate D2 may be linearly moved when the deposition source 132 is stopped. in another embodiment, the th display substrate D1 and/or the second display substrate D2 may be linearly moved while the deposition source 132 is linearly moved.

In this state, when the deposition source 132 includes a plurality of deposition sources, each deposition source 132 may include crucibles 132-1 or a plurality of crucibles 132-1 for containing and supplying deposition materials, in another embodiment, when the deposition source 132 includes a single deposition source, the deposition source 132 may include a plurality of crucibles 132-1 for containing and supplying deposition materials.

In this state, each crucible 132-1 may include a -th crucible 132-1A for containing and supplying an -th deposition material and a second crucible 132-1B for containing and supplying a second deposition material in the following description, a case where the deposition source 132 includes only deposition sources and the deposition source 132 includes a plurality of crucibles 132-1 is mainly described in detail for convenience of explanation, and in this state, each crucible 132-1 may include a nozzle for guiding and spraying the deposition material to the outside.

The deposition source 132 may include crucibles 132-1 for containing at least two deposition materials, cooling jackets 132-2 surrounding the outside of each crucible 132-1, and a heating portion 132-3 disposed between each crucible 132-1 and the cooling jackets 132-2. In addition, the deposition source 132 may include an angle limiting plate 132-4 for limiting the spray angle of the deposition material sprayed from each crucible 132-1.

In this state, the spray angle of the deposition material may represent an angle at which the deposition material spreads from the nozzle of each crucible 132-1. the angle limiting plates 132-4 may be disposed at opposite sides with respect to each crucible 132-1 to face each other. furthermore, the angle limiting plates 132-4 may include a plurality of angle limiting plates corresponding to the crucibles 132-1. at least portion of each angle limiting plate 132-4 may be bent.

Cooling jacket 132-2 may prevent an excessive increase in the temperature of crucible 132-1 because a coolant, such as cooling water, is circulated outside crucible 132-1. In addition, heating section 132-3 may include a heater to raise the temperature of crucible 132-1, thereby changing the phase of the deposition material in crucible 132-1.

The deposition source driving part 133 may drive the deposition source 132 to perform at least of linear motion and rotational motion in this state, the deposition source driving part 133 may be various forms, for example, the deposition source driving part 133 may include a robot arm to cause the deposition source 132 to perform linear motion and rotational motion.

In another embodiment, the deposition source driving part 133 may include a -th deposition source driving part 133-1 for linearly moving the deposition source 132 and a second deposition source driving part 133-2 for rotating the deposition source 132. in this state, the -th deposition source driving part 133-1 may be provided on the second deposition source driving part 133-2 to be connected to each other, or the second deposition source driving part 133-2 may be provided on the -th deposition source driving part 133-1 to be connected to each other. in this case, the deposition source 132 may be provided on the -th deposition source driving part 133-1 or the second deposition source driving part 133-2. in the following description, a case where the second deposition source driving part 133-2 is provided on the -th deposition source driving part 133-1 and is connected to the -th deposition source driving part 133-1 and the deposition source 132 is connected to the second deposition source driving part 133-2 will be mainly described in detail for convenience of explanation.

The mask assembly 134 may be disposed in the deposition part 130 in this state, the mask assembly 134 disposed in the separately disposed mask storage part 150 may be supplied into the chamber 131. in this case, the mask storage part 150 may be connected to the transfer part 120 or the deposition part 130. when the mask storage part 150 is connected to the transfer part 120, the robot arm 121 in the transfer part 120 may supply the mask assembly 134 to the deposition part 130. in another embodiment, when the mask storage part 150 is connected to the deposition part 130, the mask assembly 134 may be transferred from the mask storage part 150 to the deposition part 130 by the robot arm or shuttle disposed in the mask storage part 150 or the deposition part 130.

The above-described mask assembly 134 may include at least opening portions through which a deposition material passes in this state, a plurality of opening portions may be provided, and the opening portions may be disposed to be spaced apart from each other, thereby forming a specific pattern the mask assembly 134 may include a th mask assembly 134A disposed corresponding to the th display substrate D1 and a second mask assembly 134B disposed corresponding to the second display substrate D2 in this state, the th mask assembly 134A and the second mask assembly 134B may be disposed in the same chamber 131 and have the same opening portion pattern.

The substrate holder 135 may be disposed in the chamber 131. in this state, the substrate holder 135 may fix the th display substrate D1 or the second display substrate D2 or linearly move the th display substrate D1 or the second display substrate D2.

The mask holder 136 may support the th or second mask assembly 134A or 134B in this state, the mask holder 136 may be disposed in the chamber 131 to correspond to the th or second mask assembly 134A or 134B.

The shutter portion 137 may be disposed between the deposition source 132 and of the th and second mask assemblies 134A and 134B in an embodiment, the shutter portion 137 may be disposed between the deposition source 132 and the th and second mask assemblies 134A and 134B and the deposition source 132 in this state, the shutter portion 137 may be connected to the deposition source driving portion 133 and may be linearly moved together with the deposition source 132 during the linear movement of the deposition source 132.

In another embodiment, the shutter portion 137 may be connected to at least of the deposition source 132 and the deposition source driving portion 133. in this case, when the deposition source 132 performs a motion, the shutter portion 137 rotates and linearly moves with the deposition source 132 to be located between the deposition source 132 and the th and of the second mask assemblies 134A and 134B. in the following description, a case where the shutter portion 137 rotates and linearly moves with the deposition source 132 is mainly described in detail for convenience of explanation.

The above-described barrier 137 portion 137 may include a barrier 137-1 and a barrier driving portion 137-2, in which state the barrier 137-1 may include pairs of barriers located at opposite sides of the deposition source 132, and the barrier driving portion 137-2 may include a plurality of barrier driving portions connected to the barrier 137-1, the barrier 137-1 may control the amount of at least deposition materials supplied from the deposition source 132, in which state surfaces of the barrier 137-1 facing the deposition source 132 may be coated with a single material or formed in a pattern to prevent deposition materials supplied from the deposition source 132 from being deposited thereon, the barrier driving portion 137-2 connected to the barrier 137-1 may linearly move the barrier 137-1, in which state the barrier driving portion 137-2 may be formed in various forms, for example, the barrier driving portion 137-2 may include a linear motor, in another embodiment, the barrier driving portion 137-2 may include a pneumatic or hydraulic cylinder.

In another embodiment, flapper driving portion 137-2 may include a ball screw and a motor coupled to the ball screw, in another embodiment, flapper driving portion 137-2 may include a rack gear coupled to flapper 137-1, a spur gear coupled to the rack gear, and a motor coupled to the spur gear, in this state, flapper driving portion 137-2 is not limited to the above description, and flapper driving portion 137-2 may include all structures and devices that are coupled to flapper 137-1 and linearly move flapper 137-1.

The vision part 138 may be disposed in the chamber 131, and may photograph images of the positions of the mask assembly 134 and of the th display substrate D1 and the second display substrate D2 in this state, the vision part 138 may photograph images of the alignment marks disposed on the mask assembly 134 and of the th display substrate D1 and the second display substrate D2.

The pressure adjusting part 139 may be connected to the chamber 131 and may adjust the internal pressure of the chamber 131. In this state, the pressure adjusting part 139 may include a connection pipe 139-1 connected to the chamber 131 and a pump 139-2 provided on the connection pipe 139-1.

The connection part 140 may be connected to the transfer part 120 and adjacent to the transfer part 120 in this state, the connection part 140 may be provided with a separate transfer part, for example, a robot arm or a shuttle, for transferring the th display substrate D1 and the second display substrate D2, and further, when the th display substrate D1 or the second display substrate D2 is transferred from the transfer part 120, the pressure of the connection part 140 may be maintained to be the same as or similar to the internal pressure of the transfer part 120.

The unloading section 160 may temporarily accommodate either the th display substrate D1 or the second display substrate D2. on which deposition is completed and, furthermore, the unloading section 160 may carry out either the th display substrate D1 or the second display substrate D2 to the outside in another embodiment, the unloading section 160 is connected to a separate chamber and may transfer either the th display substrate D1 or the second display substrate D2 to the separate chamber, in which a different material film or layer is formed on either the th display substrate D1 or the second display substrate D2 on which deposition is completed in this state, the unloading section 160 may be provided with a robot arm or shuttle to transfer either the th display substrate D1 or the second display substrate D2..

The sensor portion 170 may be disposed on the deposition source 132 and measure at least of the internal pressure and temperature of each crucible 132-1 of the deposition source 132, for example, the sensor portion 170 may include a th sensor portion 171 for measuring the internal pressure of each crucible 132-1 and a second sensor portion 172 for measuring the internal temperature of each crucible 132-1.

Based on the internal pressure of each crucible 132-1 measured by the th sensor portion 171 and the internal temperature of each crucible 132-1 measured by the second sensor portion 172, the evaporation amount per unit hour of the deposition material evaporated in each crucible 132-1 can be expected, and the shutter portion 137 can be controlled based thereon, for example, based on the following equation 1, the evaporation amount per unit hour of the deposition material evaporated in each crucible 132-1 can be expected.

[ equation 1]

In equation 1, "N" represents an evaporation amount per unit hour of the deposition material (evaporation rate of the deposition material), "a" represents a surface area where the deposition material is evaporated, "α" represents an adsorption coefficient, "P" represents a saturated vapor pressure of the deposition material at a temperature T, "P" represents an internal pressure of each crucible 132-1 measured by the sensor portion 170, "m" represents a mass of the deposition material in each crucible 132-1, "k_B"represents boltzmann constant" T "represents the internal temperature of each crucible 132-1 measured by the sensor portion 170 in this state," α "," P "," a "," m ", and" k_B"may be in the form of a constant determined from the deposited material.

In the above case, the evaporation rate of the deposition material may be calculated and then compared with a preset evaporation rate. In this state, when the calculated evaporation rate of the deposition material is greater than the preset evaporation rate, the opening degree of the baffle portion 137 may be adjusted to be smaller than the existing opening degree.

In contrast, when the calculated evaporation rate of the deposition material is less than the preset evaporation rate, the opening degree of the baffle portion 137 may be adjusted to be greater than the existing opening degree. In this case, the opening degree of the shutter portion 137 may be adjusted so that the calculated evaporation rate and the preset evaporation rate of the deposition material become the same as or similar to each other. In this state, the opening degree of the shutter portion 137 can be adjusted by the distance between the shutters 137-1 disposed to face each other.

In a method of manufacturing a display apparatus (not shown) by the apparatus 100 for manufacturing a display apparatus as described above, when the th display substrate D1 or the second display substrate D2 is supplied to the loading portion 110, the th display substrate D1 or the second display substrate D2 may be moved from the loading portion 110 to the transfer portion 120. in this state, the th display substrate D1 and the second display substrate D2 may be sequentially transferred from the loading portion 110 to the transfer portion 120. thereafter, the th display substrate D1 and the second display substrate D2 may be sequentially transferred to the deposition portion 130 via the transfer portion 120. in this state, after the th display substrate D1 is sequentially transferred to the loading portion 110, the transfer portion 120 and the deposition portion 130, the second display substrate D2 may be sequentially transferred to the loading portion 110, the transfer portion 120 and the deposition portion 130.

When the th display substrate D1 and the second display substrate D2 enter the chamber 131 as described above, the th display substrate D1 and the second display substrate D2 may be disposed to face each other in the chamber 131.

When the th display substrate D1 and the second display substrate D2 are disposed in the chamber 131 as described above, the mask assembly 134 is transferred from the mask storage part 150 to the deposition part 130, and the mask assembly 134 may be located in the chamber 131 although the th display substrate D1 and the mask assembly 134 are illustrated as being spaced apart from each other in the drawing, the th display substrate D1 and the mask assembly 134 may contact each other and/or be as close as possible.

of the th and second display substrates D1 and D2 and the position of the mask assembly 134 may be photographed by the vision part 138 in the following description, a case where the positions of the th display substrate D1 and the mask assembly 134 are photographed by the vision part 138 first will be mainly described in detail for convenience of explanation.

The vision part 138 may photograph images of the alignment mark of the display base D1 and the alignment mark of the mask assembly 134 after determining the positions of the th display base D1 and the mask assembly 134 based on the positions of the alignment mark photographed by the vision part 138, the positions of at least of the th display base D1 and the mask assembly 134 may be changed to be disposed at preset positions in this state, at least of the base holder 135 and the mask holder 136 may finely adjust the positions of at least of the th display base D1 and the mask assembly 134.

After aligning the th display substrate D1 and at least of the mask assembly 134, a deposition material may be deposited on the th display substrate D1 while the deposition source 132 is linearly moved, in this state, the deposition source 132 may supply the th display substrate D1 while being linearly moved from the side of the th display substrate D1 to the other side thereof, for example, the deposition source 132 may supply the deposition material while being linearly moved from the lower side of the chamber 131 to the upper side thereof, in this case, the deposition source 132 may simultaneously supply at least two deposition materials, in this state, different types of deposition materials may be contained in the crucible 132-1. specifically, since the crucible 132-1 is arranged in series in the linear movement direction of the deposition source 132, at least two deposition materials may be deposited on the th display substrate D1.

Also, the deposition source 132 may perform the above-described linear motion a plurality of times, in this state, the deposition source 132 may be linearly moved from the side of the th display substrate D1 to the other 1 side of the 0 th display substrate D1 and then linearly moved from the other side of the th display substrate D1 to the side of the th display substrate D1 the deposition source 132 may be linearly moved a plurality of times between the side of the th display substrate D1 and the other side of the th display substrate D1.

In this state, since a method of aligning the second display substrate D2 and the mask assembly 134 with each other is the same as or similar to the above-described method of aligning the -th display substrate D1 and the mask assembly 134 with each other, a detailed description thereof will be omitted.

When the deposition of the deposition material on the th display substrate D1 is completed, the second deposition source driving part 133-2 operates to change the direction of the nozzle of the crucible 132-1 to be directed from the th display substrate D1 to the second display substrate D2. and then the deposition source 132 supplies the deposition material and may linearly move.

For example, the shutter portion 137 may prevent the th deposition material or the second deposition material from reaching the th display substrate D1 or the second display substrate D2 by completely closing of the nozzle of the th crucible 132-1A and the nozzle of the second crucible 132-1B.

In another embodiment, the baffle portion 137 may control the amount of deposition material by blocking 0 portions of the deposition material emitted from at least of the crucibles 132-1. for example, the baffle portion 137 may block 3 portions of 2 of the nozzles of the 1-1 crucible 132-1A and the nozzles of the second crucible 132-1B. in other words, when the nozzle of the -th crucible 132-1A is not blocked by the baffle portion 137, the amount of deposition material supplied through the nozzle of the -1A toward the -th display substrate D1 or the second display substrate D2 is assumed to be 100, for example, 100%. when the baffle portion blocks the portion of the nozzle of the -137-1A, the amount of deposition material supplied through the nozzle of the -st crucible 132-1A toward the -th display substrate D1 or the second display substrate D2 may be about 70, for example, 70%. accordingly, the baffle portion 137 may control the amount of deposition material supplied from at least of the crucibles 132-1.

In another embodiment, as shown in FIGS. 3A-3C, the baffle portion 137 may operate in response to movement of the deposition source 132. for example, as shown in FIG. 3A, when the deposition source 132 is moved from the 0 side of th display substrate D1 to the side thereof, deposition material ejected from th and second crucibles 132-1B is not blocked. furthermore, as shown in FIG. 3B, when the deposition source 132 is moved from the side of th display substrate D1 to the side thereof, deposition material ejected from th and second crucibles 132-1B is not blocked. conversely, as shown in FIG. 3C, when the deposition source 132 is again moved from the side of th display substrate D1 to the side thereof, deposition material ejected from th crucible 132-1A is not blocked, and deposition material ejected from second crucible 132-1B is blocked by the deposition source 132-137-the deposition material ejected from 3937 side thereof-the amount of which may be controlled by the above- deposition source 132.

In the above-described baffle portion 137, when the baffle 137-1 is linearly moved according to the operation of the baffle driving portion 137-2 (i.e., according to the degree of blocking of the upper side of the nozzle of each crucible 132-1), the amount of the deposition material supplied from each crucible 132-1 to the first display substrate D1 or the second display substrate D2 may be controlled.

In addition to the above, as described above, the operation of the baffle portion 137 may be controlled based on at least of the pressure measured by the th sensor portion 171 of each crucible 132-1 and the temperature measured by the second sensor portion 172 of each crucible 132-1, for example, the evaporation rate of the deposition material of each crucible 132-1 calculated based on the temperature and the pressure measured from the crucible 132-1 may be compared with a preset evaporation rate in this state, the preset evaporation rate may be varied according to the thickness of the deposition material deposited on the th and second display substrates D1 and D2, the relationship between the evaporation rate and the thickness of the deposited deposition material may be stored in the form of a table, in this case, when the thickness of the deposition material deposited on the th and second display substrates D1 and D2 is set, the evaporation rate of the deposition material ejected from each crucible 132-1 may be determined as the preset evaporation rate.

In the above case, when the apparatus 100 for manufacturing a display device operates, the opening degree of the baffle 137-1 may be in a determined state, and then, when the apparatus 100 for manufacturing a display device operates, the opening degree of the baffle 137-1 may be determined by comparing the above-calculated evaporation rate of the deposition material with a preset evaporation rate, for example, when the above-calculated evaporation rate of the deposition material is determined to be greater than the preset evaporation rate, the baffle 137-1 may be moved such that the opening degree of the baffle 137-1 is reduced to be less than an existing degree or an initial degree.

When the deposition is completed as above, the th display substrate D1 and the second display substrate D2 may be transferred from the chamber 131 to the unloading section 160 via the transfer section 120.

In the above case, the baffle section 137 may form various forms of deposition material layers on the th display substrate D1 or the second display substrate D2. for example, the baffle section 137 may block portions of the deposition material or some of the deposition material. furthermore, the baffle section 137 may form the same layers in the same order on the th display substrate D1 and the second display substrate D2. for example, when the deposition source 132 moves from of the side and the other 3 side of the th display substrate D1 to another of the side and the other side of the display substrate D1, the number of depositions of deposition materials on the th display substrate D1 is even.

To prevent the above, after the deposition source 132 turns to face the second display substrate D2, the barrier section 137 moves the deposition source 132 to another of the side and the other side of the second display substrate D2 in a state of preventing the deposition material from being supplied from the deposition source 132, then, while releasing the supply of the deposition material from the deposition source 132, the deposition source 132 moves in a linear motion, and the deposition material may be deposited on the second display substrate D2, in this case, deposition material layers may be deposited on the th display substrate D1 and the second display substrate D2 in the same order.

Accordingly, according to the apparatus 100 for manufacturing a display apparatus and the method of manufacturing a display apparatus, as described above, the deposition materials may be deposited on the th display substrate D1 or the second display substrate D2 in various orders, and further, according to the apparatus 100 for manufacturing a display apparatus and the method of manufacturing a display apparatus, the deposition materials having various concentrations may be deposited on the th display substrate D1 or the second display substrate D2.

According to the apparatus 100 for manufacturing a display device and the method of manufacturing a display device, a deposition material layer having a value identical or similar to a design value may be deposited on the th display substrate D1 or the second display substrate D2 according to the apparatus 100 for manufacturing a display device and the method of manufacturing a display device, since a deposition material may be precisely deposited on the th display substrate D1 or the second display substrate D2, a high resolution display device may be manufactured.

Fig. 4 is a plan view illustrating a portion of the apparatus 200 for manufacturing a display apparatus according to another embodiment fig. 5 is a sectional view illustrating a portion of the apparatus 200 for manufacturing a display apparatus of fig. 4.

Referring to fig. 4 and 5, the apparatus 200 for manufacturing a display device may include a loading part (not shown), a transfer part 220, a deposition part 230, a connection part (not shown), a mask storage part (not shown), an unloading part (not shown), and a sensor part 270. In this state, since the loading part, the transfer part 220, the connecting part, the mask storage part, the unloading part, and the sensor part 270 are the same as or similar to those described above, detailed descriptions thereof are omitted.

The deposition part 230 may include a chamber 231, a deposition source 232, a deposition source driving part 233, a mask assembly 234, a substrate holder 235, a mask holder 236, a shutter part 237, a vision part 238, and a pressure adjusting part 239. In this state, the chamber 231, the mask assembly 234, the substrate holder 235, the mask holder 236, the vision part 238, and the pressure adjustment part 239 may be the same as or similar to those described in fig. 1 to 3C.

The deposition source 232 may include a plurality of crucibles 232-1, cooling jackets 232-2, heating portions 232-3, and angle limiting plates 232-4. In this state, since the cooling jacket 232-2, the heating section 232-3, and the angle limiting plate 232-4 are the same as or similar to those described in fig. 1 to 3C, detailed description thereof is omitted.

The crucible 232-1 may include a th crucible 232-1A, a second crucible 232-1B, and a third crucible 232-1℃ in this state, the same or different deposition materials may be contained in each of the th crucible 232-1A to the third crucible 232-1℃ in the following description, for convenience of explanation, a case where different deposition materials are contained in the th crucible 232-1A to the third crucible 232-1C will be mainly described in detail.

The deposition source driving part 233 may include a th deposition source driving part 233-1 and a second deposition source driving part 233-2. in this state, the th deposition source driving part 233-1 may move the deposition source 232 from of the 5390 th display substrate D1 and the lower surface of the second display substrate D2 to the other of the th display substrate D1 and the lower surface of the second display substrate D2. in this state, the th deposition source driving part 233-1 may be provided in the form of a linear motor, a ball screw, or a motor.the second deposition source driving part 233-2 is disposed on the th deposition source driving part 233-1, and may linearly move the deposition source 232 under the of the th display substrate D1 and the second display substrate D2. in this state, the second deposition source driving part 233-2 may be formed to be identical to or similar to the aforementioned th deposition source driving part 39961.

In an embodiment, the barrier portion 237 may be formed to be the same as or similar to the barrier portion described in fig. 1 to 3C, in another embodiment, the barrier portion 237 performing a rotational motion may control an amount of a deposition material supplied from each crucible 232-1, in detail, the barrier portion 237 may include a pivotable rotation plate 237-1 and a rotational driving portion 237-2 connected to the rotation plate 237-1 and rotating the rotation plate 237-1, in which state the rotation plate 237-1 may be rotated between an X axis and a Z axis of fig. 5, or may be rotated about the Z axis, in which case the rotational driving portion 237-2 may include a speed reducer and a motor connected to the speed reducer, in which case, the barrier portion 237 may include a plurality of barrier portions corresponding to the number of crucibles 232-1, the barrier portion 237 may be independently operated, the structure of the barrier portion 237 may be applied to the apparatus 100 for manufacturing a display apparatus shown in fig. 1 to 3C, in the following description, for convenience of which the rotational plate portion 237 is mainly described in detail.

In a method of manufacturing a display apparatus (not shown) by using the apparatus 200 for manufacturing a display apparatus described above, the th display substrate D1 and the second display substrate D2 may be input into the chamber 231. furthermore, the mask assembly 234 may be input into the chamber 231. in this state, since a method of supplying the th display substrate D1, the second display substrate D2, and the mask assembly 234 to the chamber 231 is the same as or similar to the method described in FIGS. 1 to 3C, a detailed description thereof is omitted.

In this state, since a method of aligning of the th display substrate D1 and the second display substrate D2 with the mask assembly 234 is the same as or similar to the method described in fig. 1 to 3C, a detailed description thereof is omitted.

During the deposition as above, the baffle portion 237 may control the amount of deposition material ejected from the th crucible 232-1A through the third crucible 232-1C, for example, the baffle portion 237 may block at least of the deposition materials ejected from the th crucible 232-1A through the third crucible 232-1C.

In another embodiment, the shutter portion 237 may block portions of at least of the deposition materials ejected from the crucible 232-1A to the third crucible 232-1C in this case, the rotation driving portion 237-2 may rotate the rotation plate 237-1. in this state, since the method of controlling the amount of the deposition material ejected from the crucible 232-1A to the third crucible 232-1C performed by the shutter portion 237 is the same, a case where the shutter portion 237 controls the amount of the deposition material ejected from the crucible 232-1A will be mainly described in detail.

For example, when the rotating plate 237-1 is disposed parallel to the lower surface of the chamber 231, the shutter portion 237 may completely block the deposition material ejected from the -th crucible 232-1A when the rotating plate 237-1 forms an acute angle with the lower surface of the chamber 231, the shutter portion 237 may block a portion of the deposition material ejected from the -th crucible 232-1A.

In this state, the blocking amount of the deposition material sprayed from the th crucible 232-1A may be determined according to an angle formed between the rotating plate 237-1 and the lower surface of the chamber 231. furthermore, when the rotating plate 237-1 forms a right angle with the lower surface of the chamber 231, the blocking plate portion 237 does not block the deposition material sprayed from the th crucible 232-1A. therefore, the blocking plate portion 237 may selectively deposit only of the plurality of deposition materials on the th display substrate D1 or the second display substrate D2, or may deposit a material on the th display substrate D1 or the second display substrate D2 by controlling the amount of at least of the deposition materials.

In detail, the evaporation rate of the deposition material ejected from each crucible 232-1 may be calculated based on the pressure of each crucible 232-1 measured by the th sensor portion 271 and the temperature of each crucible 232-1 measured by the second sensor portion 272 and compared with a preset evaporation rate, thereby controlling the operation of the baffle portion 237.

The rotation angle of the rotating plate 237-1 may be determined at an initial stage when the deposition material is deposited on of the th and second display substrates D1 and D2, in which state the amount of the deposition material reaching of the th and second display substrates D1 and D2 from each crucible 232-1 may be determined according to the rotation angle of the rotating plate 237-1, the rotation angle of the rotating plate 237-1 being the degree of rotation of the rotating plate 237-1 in a state in which the rotating plate 237-1 completely blocks each crucible 232-1, and further, the thickness of the deposition material deposited on of the th and second display substrates D1 and D2 through the above process may be determined.

In this state, by comparing the calculated evaporation rate of the deposition material with the preset evaporation rate of the deposition material, when the calculated evaporation rate of the deposition material is greater than the preset evaporation rate of the deposition material, the rotating plate 237-1 may be rotated such that the rotation angle of the rotating plate 237-1 is less than the preset rotation angle. In contrast, when the calculated evaporation rate of the deposition material is less than the preset evaporation rate of the deposition material, the rotating plate 237-1 may be rotated such that the rotation angle of the rotating plate 237-1 is greater than the preset rotation angle. When the calculated evaporation rate of the deposition material is the same as the preset evaporation rate of the deposition material, the rotation plate 237-1 may be stopped to maintain the current state.

In the above case, the relationship among the thickness of the deposition material deposited on of the th display substrate D1 and the second display substrate D2, the rotation angle of the rotating plate 237-1, and the evaporation rate may be programmed in the form of an equation or stored in the form of a table.

In the above case, while the deposition material is deposited on of the th display substrate D1 and the second display substrate D2, the other of the th display substrate D1 and the second display substrate D2 may be aligned with the mask assembly 234.

After the deposition of the deposition material on of the th and second display substrates D1 and D2 by the deposition source 232 is completed, the deposition source 232 may be moved toward the other of the th and second display substrates D1 and D2, the deposition source 232 may be moved by the th deposition source driving part 233-1, and the second deposition source driving part 233-2 may be moved together with the deposition source 232 by the th deposition source driving part 233-1.

When the deposition source 232 moves as above, the deposition source 232 may move and be disposed from the lower surface of of the th display substrate D1 and the second display substrate D2 to the lower surface of another of the th display substrate D1 and the second display substrate D2. then, while the second deposition source driving part 233-2 linearly moves the deposition source 232, the deposition material may be deposited on another of the th display substrate D1 and the second display substrate D2.

When the deposition of the deposition material on the th display substrate D1 and the second display substrate D2 was completed as described above, the th display substrate D1 and the second display substrate D2 may be carried out to the outside through the unloading section.

Accordingly, according to the apparatus 200 for manufacturing a display apparatus and the method of manufacturing a display apparatus, deposition materials may be deposited on the th display substrate D1 or the second display substrate D2 in various orders, and further, according to the apparatus 200 for manufacturing a display apparatus and the method of manufacturing a display apparatus, deposition materials having various concentrations may be deposited on the th display substrate D1 or the second display substrate D2.

According to the apparatus 200 for manufacturing a display device and the method of manufacturing a display device, a deposition material layer having the same or similar form as a design value may be deposited on the th display substrate D1 or the second display substrate D2 in the apparatus 200 for manufacturing a display device and the method of manufacturing a display device, since the deposition material may be precisely deposited on the th display substrate D1 or the second display substrate D2, a high resolution display device may be manufactured.

Fig. 6 is a cross-sectional view illustrating a portion of an apparatus for manufacturing a display apparatus according to another embodiment.

Referring to fig. 6, an apparatus (not shown) for manufacturing a display device may include a loading part (not shown), a transfer part (not shown), a deposition part 330, a connection part (not shown), a mask storage part (not shown), an unloading part (not shown), and a sensor part 370. In this state, since the loading portion, the transfer portion, the connecting portion, the mask storage portion, the unloading portion, and the sensor portion 370 are the same as or similar to those described in fig. 1 to 3C, detailed description thereof is omitted.

The deposition part 330 may include a chamber 331, a deposition source 332, a deposition source driving part 333, a mask assembly 334, a substrate holder 335, a mask holder 336, a deposition material supplying part 337-1, a cutting part 337-2, a vision part 338, and a pressure adjusting part 339. In this state, the chamber 331, the deposition source driving part 333, the mask assembly 334, the substrate holder 335, the mask holder 336, the vision part 338, and the pressure adjusting part 339 may be the same as or similar to those described in fig. 1 to 3C.

The deposition source 332 may include a plurality of crucibles 332-1, cooling jackets 332-2, heating portions 332-3, and angle limiting plates 332-4. At least two deposition materials may be contained in the crucible 332-1. In this state, different deposition materials may be contained in the respective crucibles 332-1. Specifically, the deposition material in a gaseous state may be stored in each crucible 332-1.

Cooling jacket 332-2 may be disposed to surround each of crucible 332-1, deposition material supply portion 337-1 and cut-off portion 337-2 in this state, cooling jacket 332-2 may control the temperature of at least of each of crucible 332-1, deposition material supply portion 337-1 and cut-off portion 337-2 by circulating a coolant as described above in FIGS. 1 through 3C.

The heating portion 332-3 is provided in the cooling jacket 332-2 to change the morphology of the deposition material in the deposition material supply portion 337-1. For example, the heating portion 332-3 including a heater may change the deposition material in the deposition material supply portion 337-1 from a solid state to a gas state, or from a solid state to a liquid state and then to a gas state. Since the angle restricting plate 332-4 is the same as or similar to the angle restricting plate described in fig. 1 to 3C, a detailed description thereof is omitted.

The deposition material may be accommodated in the deposition material supply part 337-1, and the state of the deposition material may be changed. In this state, the deposition material supply part 337-1 may include a plurality of deposition material supply parts to be connected to the respective crucibles 332-1.

The cutoff part 337-2 is disposed on a flow path connecting each deposition material supply part 337-1 and each crucible 332-1, and can control the amount of deposition material supplied from each deposition material supply part 337-1 to each crucible 332-1. In this state, the cutoff portion 337-2 may include a solenoid valve and control the opening degree of each flow path.

When a method of manufacturing a display device (not shown) is described by an apparatus for manufacturing a display device, the th display substrate D1 and the second display substrate D2 may be disposed in the chamber 331. in this state, the th display substrate D1 and the second display substrate D2 may be disposed perpendicularly with respect to a lower surface of the chamber 331. furthermore, of the th display substrate D1 and the second display substrate D2 may be positioned to be aligned with the mask assembly 334.

Then, the deposition material may be deposited on of the th and second display substrates D1 and D2 while the deposition source 332, the deposition material supplying part 337-1 and the cutoff part 337-2 are linearly moved by the th deposition source driving part 333-1. in this state, the cutoff part 337-2 may control the amount of the deposition material supplied from the deposition material supplying part 337-1 to each crucible 332-1. specifically, the cutoff part 337-2 may be controlled based on a design value previously set by a user.

While depositing the deposition material as described above, another of the th display substrate D1 and the second display substrate D2 may be positioned in alignment with the mask assembly 334.

When deposition of the deposition material on of the th and second display substrates D1 and D2 is completed, the direction of the deposition source 332 may be changed from of the th and second display substrates D1 and D2 to the other th and second display substrates D1 and D2 by the second deposition source driving part 333-2 in this state, a detailed description thereof is omitted since the method of changing the direction of the deposition source 332 is the same as or similar to the method described in fig. 1.

After the direction of the deposition source 332 is changed as described above, the deposition material may be deposited on the other of the th and second display substrates D1 and D2 while operating the th deposition source driving part 333-1 to linearly move the deposition source 332, the deposition material supplying part 337-1, and the cutoff part 337-2. in this state, the cutoff part 337-2 may control the amount of the deposition material sprayed from each crucible 332-1 based on a preset value.

The cutoff part 337-2 may perform control based on values measured by at least of the th and second sensor parts 371 and 372 arranged in each crucible 332-1. in this state, the th and second sensor parts 371 and 372 may be arranged in each crucible 332-1 or may be arranged on a flow path connecting each crucible 332-1 and each deposition material supply part 337-1. in the following description, the case where the th and second sensor parts 371 and 372 are arranged in each crucible 332-1 is mainly described in detail for convenience of explanation.

The evaporation rate of the deposition material ejected from each crucible 332-1 may be calculated based on the internal pressure of each crucible 332-1 measured by the th sensor portion 371 and the internal temperature of each crucible 332-1 measured by the second sensor portion 372.

The amount of the deposition material supplied to each crucible 332-1 through the cutoff portion 337-2 can be controlled by comparing the above-calculated evaporation rate of the deposition material ejected from each crucible 332-1 with a preset evaporation rate. For example, when the calculated evaporation rate of the deposition material sprayed from each crucible 332-1 is greater than the preset evaporation rate, the cutoff portion 337-2 may be controlled such that the amount of the deposition material supplied from each deposition material supply portion 337-1 to each crucible 332-1 is reduced to be less than the existing amount or the initial amount.

In contrast, when the calculated evaporation rate of the deposition material sprayed from each crucible 332-1 is less than the preset evaporation rate, the cutoff portion 337-2 may be controlled such that the amount of the deposition material supplied from each deposition material supply portion 337-1 to each crucible 332-1 is increased to be greater than the existing amount or initial amount.

Further, when the calculated evaporation rate of the deposition material sprayed from each crucible 332-1 is the same as the preset evaporation rate, the cutoff part 337-2 may maintain the existing state or the initial state such work may be continuously performed while the deposition material is deposited on of the th and second display substrates D1 and D2.

When the deposition of the deposition material on the th display substrate D1 and the second display substrate D2 is completed, the th display substrate D1 and the second display substrate D2 may be moved from the chamber 331 to an unloading part.

Accordingly, in an apparatus for manufacturing a display device and a method of manufacturing a display device, deposition materials may be deposited on the th display substrate D1 or the second display substrate D2 in various orders, and further, deposition materials having various concentrations may be deposited on the th display substrate D1 or the second display substrate D2 according to the apparatus for manufacturing a display device and the method of manufacturing a display device.

According to an apparatus for manufacturing a display device and a method of manufacturing a display device, a deposition material layer having the same or similar form as a design value may be deposited on the th display substrate D1 or the second display substrate D2 in an apparatus for manufacturing a display device and a method of manufacturing a display device, since a deposition material may be precisely deposited on the th display substrate D1 or the second display substrate D2, a high resolution display device may be manufactured.

Fig. 7 is a cross-sectional view illustrating a portion of an apparatus for manufacturing a display apparatus according to another embodiment.

Referring to fig. 7, an apparatus (not shown) for manufacturing a display device may include a loading part (not shown), a transfer part (not shown), a deposition part 430, a connection part (not shown), a mask storage part (not shown), an unloading part (not shown), and a sensor part 470. In this state, since the loading portion, the transfer portion, the connecting portion, the mask storage portion, the unloading portion, and the sensor portion 470 are the same as or similar to those described in fig. 1 to 3C, detailed description thereof is omitted.

The deposition part 430 may include a chamber 431, a deposition source 432, a deposition source driving part 433, a mask assembly 434, a substrate holder 435, a mask holder 436, a deposition material supplying part 437-1, a cutting part 437-2, an vision part 438, and a pressure adjusting part 439. In this state, the chamber 431, the mask assembly 434, the substrate holder 435, the mask holder 436, the vision part 438, and the pressure adjustment part 439 may be the same as or similar to those described in fig. 1 to 3C. In addition, since the deposition source 432, the deposition material supply part 437-1, and the cutoff part 437-2 are the same as or similar to those described in FIG. 6, a detailed description thereof is omitted.

In this state, the deposition source 432 may include a plurality of crucibles 432-1, a cooling jacket 432-2, a heating portion 432-3, and an angle limiting plate 432-4, and the crucibles 432-1 may include an -th crucible 432-1A, a second crucible 432-1B, and a third crucible 432-1℃ since the deposition source driving portion 433 is the same as or similar to the deposition source driving portion described in FIGS. 4 and 5, a detailed description thereof is omitted.

When a display apparatus (not shown) is manufactured by using an apparatus for manufacturing a display apparatus, the th display substrate D1 and the second display substrate D2 (not shown) may be disposed in the chamber 431 of the deposition portion 430 and a deposition material may be deposited thereon in this state, the th display substrate D1 and the second display substrate D2 may be disposed as shown in FIG. 4.

In detail, of the th display substrate D1 and the second display substrate D2 may be positioned to align with the mask assembly 434, then, the deposition material may be deposited on of the th display substrate D1 and the second display substrate D2 while the second deposition source driving part 433-2 linearly moves the deposition source 432, the deposition material supplying part 437-1 and the cutoff part 437-2. in this state, the cutoff part 437-2 may control the amount of the deposition material supplied from the deposition material supplying part 437-1 to each crucible 432-1. in particular, the cutoff part 437-2 may be controlled based on a design value preset by a user. while the deposition material is deposited as described above, the other of the th display substrate D1 and the second display substrate D2 may be positioned to align with the mask assembly 434.

When deposition of the deposition material on of the th and second display substrates D1 and D2 is completed, the th deposition source driving part 433-1 may move the deposition source 432 from the lower surface of of the th and second display substrates D1 and D2 to the lower surface of th and other of the display substrates D1 and D2.

Then, while operating the second deposition source driving part 433-2 to linearly move the deposition source 432, the deposition material supplying part 437-1, and the cutoff part 437-2, the deposition material may be deposited on th display substrate D1 and another of the second display substrates D2, in this state, the cutoff part 437-2 may control the amount of the deposition material sprayed from each crucible 432-1 based on a preset value.

In the above case, since the cut-off portion 437-2 controls the amount of the deposition material supplied from each crucible 432-1 to of the th display substrate D1 and the second display substrate D2 based on the values measured by the th sensor portion 471 and the second sensor portion 472, the thickness of the deposition material layer deposited on of the th display substrate D1 and the second display substrate D2 may be controlled.

In detail, the evaporation amount of the deposition material ejected from each crucible 432-1 may be expected according to the above equation 1 based on the internal pressure of each crucible 432-1 measured by the th sensor portion 471 and the internal temperature of each crucible 432-1 measured by the second sensor portion 472. in this state, the amount of the deposition material supplied from the deposition material supply portion 437-1 to each crucible 432-1 may be controlled by the cutoff portion 437-2 by comparing the evaporation amount of the deposition material ejected from each crucible 432-1 with the preset evaporation amount.

When the deposition of the deposition material on the th display substrate D1 and the second display substrate D2 is completed, the th display substrate D1 and the second display substrate D2 may be moved from the chamber 431 toward the unloading section.

Accordingly, in an apparatus for manufacturing a display device and a method of manufacturing a display device, deposition materials may be deposited on the th display substrate D1 or the second display substrate D2 in various orders, and further, deposition materials having various concentrations may be deposited on the th display substrate D1 or the second display substrate D2 according to the apparatus for manufacturing a display device and the method of manufacturing a display device.

According to an apparatus for manufacturing a display device and a method of manufacturing a display device, a deposition material layer having the same or similar form as a design value may be deposited on the th display substrate D1 or the second display substrate D2 in the apparatus 200 for manufacturing a display device and the method of manufacturing a display device, since the deposition material may be precisely deposited on the th display substrate D1 or the second display substrate D2, a high resolution display device may be manufactured.

Fig. 8 is a plan view of a display device 20 manufactured by the apparatus for manufacturing a display device shown in of fig. 1, 4, 6, and 7 fig. 9 is a sectional view taken along line IX-IX of fig. 8.

Referring to fig. 8 and 9, in the display device 20, a display area DA and a non-display area NDA outside the display area DA may be defined on a substrate 21. The emission unit may be disposed in the display area DA, and a power wiring (not shown) may be disposed in the non-display area NDA. In addition, the pad part C may be disposed in the non-display area NDA.

In this state, the display apparatus 20 may include the th display substrate D1 or the second display substrate D2. in this case, since the th display substrate D1 or the second display substrate D2 are identical or similar to each other, in the following description, for convenience of explanation, a case where the display apparatus 20 includes the th display substrate D1 is mainly described in detail.

The display device 20 may include an th display substrate D1, an intermediate layer 28-2, a counter electrode 28-3, and an encapsulation portion in this state, the th display substrate D1 may include a substrate 21, a buffer layer 22, an active layer 23, a gate insulating layer 24, a gate electrode 25, an interlayer insulating layer 26, a source electrode 27-1, a drain electrode 27-2, a passivation layer 27, a pixel electrode 28-1, and a pixel defining layer 29.

The substrate 21 may be formed of a plastic material or a metal material such as SUS (stainless steel) or Ti. For example, the substrate 21 may be formed of Polyimide (PI). In the following description, for convenience of explanation, a case where the substrate 21 is formed of polyimide is mainly described in detail.

A thin film transistor TFT may be formed on the substrate 21, and a passivation layer 27 may be formed to cover the thin film transistor TFT, and an Organic Light Emitting Diode (OLED)28 may be formed on the passivation layer 27.

A buffer layer 22 formed of an organic compound and/or an inorganic compound may be further formed on the upper surface of the substrate 21. the buffer layer 22 may be formed of SiO_x(x.gtoreq.1) or SiN_x(x.gtoreq.1).

After forming the active layer 23 arranged in a certain pattern on the buffer layer 22, the active layer 23 is buried by the gate insulating layer 24. The active layer 23 may further include a source region 23-1 and a drain region 23-3 with a channel region 23-2 therebetween.

The active layer 23 may be formed to include various materials, for example, the active layer 23 may include an inorganic semiconductor material such as amorphous silicon or crystalline silicon in another example, the active layer 23 may include an oxide semiconductor in another example, the active layer 23 may include an organic semiconductor material.

The active layer 23 may be formed by forming an amorphous silicon film on the buffer layer 22 and then crystallizing the amorphous silicon film into a polycrystalline silicon film, and patterning the polycrystalline silicon film. In the active layer 23, the source region 23-1 and the drain region 23-3 are doped with impurities according to the type of the thin film transistor TFT, for example, a driving TFT (not shown) or a switching TFT (not shown).

A gate electrode 25 corresponding to the active layer 23 and an interlayer insulating layer 26 burying the gate electrode 25 are formed on an upper surface of the gate insulating layer 24.

After forming the contact hole H1 in the interlayer insulating layer 26 and the gate insulating layer 24, the source electrode 27-1 and the drain electrode 27-2 are formed on the interlayer insulating layer 26 to contact the source region 23-1 and the drain region 23-3, respectively.

A passivation layer 27 is formed on the thin film transistor TFT, and a pixel electrode 28-1 of the OLED 28 is formed on the passivation layer 27. The pixel electrode 28-1 is in contact with the drain electrode 27-2 of the thin film transistor TFT through a through hole H2 formed in the passivation layer 27. The passivation layer 27 may be formed of an inorganic material and/or an organic material in a single layer or two or more layers. Although the passivation layer 27 may be formed as a planarization film such that the upper surface of the passivation layer 27 is flat regardless of the unevenness of the lower film, the upper surface may be formed such that the unevenness along the film located below the passivation layer 27 is uneven. The passivation layer 27 may be formed of a transparent insulating material to achieve a resonance effect.

After the pixel electrode 28-1 is formed on the passivation layer 27, the pixel defining layer 29 is formed of an organic material and/or an inorganic material to cover the pixel electrode 28-1 and the passivation layer 27, and is opened to expose the pixel electrode 28-1 and extend to the pixel electrode 28-1.

The intermediate layer 28-2 and the counter electrode 28-3 are formed at least on the pixel electrode 28-1 in another embodiment, the counter electrode 28-3 may be formed on the entire surface of the display substrate D1 or D2 in which case the counter electrode 28-3 may be formed on the intermediate layer 28-2 and the pixel defining layer 29 in the following description, the case where the counter electrode 28-3 is formed on the intermediate layer 28-2 and the pixel defining layer 29 will be mainly described in detail for convenience of explanation.

The pixel electrode 28-1 serves as an anode, and the counter electrode 28-3 serves as a cathode. The polarities of the pixel electrode 28-1 and the counter electrode 28-3 may be reversed.

The pixel electrode 28-1 and the counter electrode 28-3 are insulated from each other by the intermediate layer 28-2, and voltages of different polarities are applied to the intermediate layer 28-2. Thus, light is emitted from the organic emission layer.

In another alternative example, the intermediate layer 28-2 may include an organic emissive layer, and may also include at least of a Hole Injection Layer (HIL), a Hole Transport Layer (HTL), an Electron Transport Layer (ETL), and an Electron Injection Layer (EIL), in another embodiment, in addition to the organic emissive layer, HIL, HTL, ETL, and EIL, the intermediate layer 28-2 may include an intermediate buffer layer (interlayer) disposed between at least two adjacent layers of the organic emissive layer, HIL, HTL, ETL, and EIL, the disclosure is not limited thereto, and the intermediate layer 28-2 may include an organic emissive layer, and may also include various other functional layers (not shown).

Each layer forming the above intermediate layer may be manufactured by the apparatus for manufacturing a display device shown in fig. 1, 4, 6, or 7. In an embodiment, since the deposition materials supplied from the respective crucibles of the apparatus for manufacturing a display device shown in fig. 1, 4, 6, or 7 are sequentially deposited, the respective layers of the intermediate layer 28-2 may be formed.

In other words, layers forming the intermediate layer 28-2 may be in a form in which deposition materials supplied from a plurality of crucibles are sequentially deposited, or in a form in which at least two deposition materials supplied from a plurality of crucibles are mixed, in another embodiment, the intermediate layer 28-2 may be formed while sequentially depositing deposition materials supplied from the respective crucibles, in this case, deposition materials supplied from crucibles may form layers forming the intermediate layer 28-2, and further, when deposition materials sprayed from adjacent crucibles are mixed with each other, different types of deposition materials may form layers forming the intermediate layer 28-2.

In the above case, the deposition order of the respective layers or the mixing ratio of materials included in each layer may be determined by controlling the shutter portion or the cutoff portion as described above.

The intermediate layer 28-2 may include a plurality of intermediate layers, and the intermediate layer 28-2 may be formed in the display area DA. Specifically, the intermediate layer 28-2 may be formed in the display area DA having a shape other than a rectangle or a square. In this state, the intermediate layers 28-2 may be arranged to be spaced apart from each other in the display area DA.

For example, the plurality of sub-pixels may include sub-pixels emitting light of red, green, and blue colors, or may include sub-pixels emitting light of red, green, blue, and white colors (not shown).

The encapsulation portion is disposed to face the substrate 21, and may include an encapsulation substrate (not shown) shielding the th display substrate D1, the intermediate layer 28-2, and the counter electrode 28-3. in this state, the encapsulation substrate may be the same as or similar to the substrate 21. furthermore, a sealing portion (not shown) may be disposed between the encapsulation substrate and the substrate 21 to completely shield the intermediate layer 28-2 and the counter electrode 28-3 from the outside. in another embodiment, the encapsulation portion may include a thin film encapsulation layer E disposed on the counter electrode 28-3 and shielding the counter electrode 28-3.

The thin film encapsulation layer E may include a plurality of inorganic layers or include an inorganic layer and an organic layer.

For example, the organic layer may be formed of polyacrylate, and in detail, may include a polymerized monomer composition including diacrylate monomers and triacrylate monomers, the monoacrylate monomers may be further included in the monomer composition .

The inorganic layer of the thin film encapsulation layer E may be a single layer or a stacked layer including a metal oxide or a metal nitride. In detail, the inorganic layer may include SiN_x、Al₂O₃、SiO₂And TiO₂ kinds of.

The top layer of the thin film encapsulation layer E exposed to the outside may be formed of an inorganic layer to prevent moisture from intruding into the OLED 28.

In another example, thin film encapsulation layer E can include at least sandwich structures in which at least inorganic layers are disposed between at least two inorganic layers, in another example, thin film encapsulation layer E can include at least sandwich structures in which at least organic layers are disposed between at least two inorganic layers and at least sandwich structures in which at least inorganic layers are disposed between at least two organic layers.

The thin film encapsulation layer E may include an th inorganic layer, a th organic layer, and a second inorganic layer sequentially over the OLED 28.

In another example, thin film encapsulation layer E may include a inorganic layer, a organic layer, a second inorganic layer, a second organic layer, and a third inorganic layer sequentially over OLED 28.

In another example, thin film encapsulation layer E may include a inorganic layer, a organic layer, a second inorganic layer, a second organic layer, a third inorganic layer, a third organic layer, and a fourth inorganic layer sequentially over OLED 28.

A metal halide layer including LiF may be further included between the OLED 28 and the th inorganic layer the metal halide layer may prevent the OLED 28 from being damaged when the th inorganic layer is formed by a sputtering method.

The th organic layer may have an area smaller than that of the second inorganic layer, and the second organic layer may have an area smaller than that of the third inorganic layer.

Therefore, since the display device 20 includes the intermediate layer 28-2 almost similar to the design value, a high-precision image can be realized.

As described above, in the apparatus for manufacturing a display apparatus and the method of manufacturing a display apparatus according to the present embodiment, intermediate layers of various shapes can be formed.

In the apparatus for manufacturing a display apparatus and the method of manufacturing a display apparatus according to the present embodiment, the intermediate layer can be accurately formed.

In the apparatus for manufacturing a display apparatus and the method of manufacturing a display apparatus according to the present embodiment, a high-resolution display apparatus can be manufactured.

It is to be understood that the embodiments described herein are to be considered in a descriptive sense only and not for purposes of limitation. Descriptions of features or aspects within each embodiment should generally be considered as available for other similar features or aspects in other embodiments.

Although or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope defined by the following claims.