阅读说明：本技术 晶圆处理模组与其操作方法及处理装置 (Wafer processing module, operation method thereof and processing device ) 是由 廖诗瑀 郭仕奇 洪蔡豪 李宗宪 于 2019-06-28 设计创作，主要内容包括：本揭示涉及一种晶圆处理模组与其操作方法及处理装置,特别是涉及一种用于监视处理模组中的遮挡器与参考点之间的距离的方法和系统。例如,该方法包括相对于晶圆处理模组中的基板支撑件移动遮挡器,以及利用量测装置来确定遮挡器与晶圆处理模组的壁之间的距离。响应于该距离大于一值,该方法亦包括将基板转移到基板支撑件,并且响应于该距离等于或小于该值,该方法包括重置遮挡器。(The present disclosure relates to a wafer processing module, an operating method thereof and a processing apparatus, and more particularly, to a method and a system for monitoring a distance between a shutter and a reference point in a processing module. For example, the method includes moving the shutter relative to a substrate support in the wafer processing module and determining a distance between the shutter and a wall of the wafer processing module using a measurement device. In response to the distance being greater than a value, the method also includes transferring the substrate to a substrate support, and in response to the distance being equal to or less than the value, the method includes resetting the shutter.)

1. A wafer processing module, comprising:

a substrate support configured to support a wafer;

a shutter configured to move relative to the substrate support, wherein the shutter is proximate to a component of the wafer processing module; and

a metrology apparatus configured to:

measuring a capacitance between the shutter and the component of the wafer processing module; and

calculating a distance between the shutter and the component of the wafer processing module based on the measured capacitance.

2. The wafer processing module of claim 1 wherein said component of said wafer processing module comprises an upper wall portion of said wafer processing module.

3. The wafer processing module of claim 1 wherein the metrology device is electrically connected in parallel to a capacitor formed by the shutter and the component of the wafer processing module.

4. The wafer processing module of claim 1, wherein the metrology device comprises a first terminal and a second terminal, wherein the first terminal is electrically connected to the shutter and the second terminal is electrically connected to the component of the wafer processing module.

5. A method of operating a wafer processing module, the method comprising:

moving a shutter relative to a substrate support in a wafer processing module;

determining a distance between the shutter and a wall of the wafer processing module using a measurement device;

responsive to the distance being greater than a value, transferring a substrate to a substrate support; and

resetting the shutter in response to the distance being equal to or less than the value.

6. The method of claim 5, wherein resetting the shutter comprises replacing one or more components of a moving assembly configured to move the shutter.

7. The method of claim 5, wherein resetting the shutter comprises replacing the shutter with another shutter having a body thinner than the shutter.

8. The method of claim 5, wherein determining the distance between the shutter and the wall of the wafer processing module comprises:

charging a capacitor formed between the shutter and the wall of the wafer processing module with a power source;

measuring a voltage across the capacitor; and

converting the measured voltage to the distance between the shutter and the wall of the wafer processing module.

9. The method of claim 5, wherein determining the distance between the shutter and the wall of the wafer processing module comprises:

charging a capacitor formed between the shutter and the wall of the wafer processing module with a power source;

measuring the charge between the capacitors with the measuring device; and

converting the measured charge to the distance between the shutter and the wall of the wafer processing module.

10. A processing apparatus, comprising:

a substrate support;

a shield configured to move relative to the substrate support, wherein the shield is proximate to a component of the processing apparatus; and

a measurement device configured to determine a distance between the shutter and the component of the processing module.

Technical Field

The present disclosure relates to a wafer processing module, a method of operating a wafer processing module, and a processing apparatus.

Background

Production equipment used in semiconductor manufacturing may be a source of particles for wafers in an Integrated Circuit (IC) manufacturing facility. During wafer fabrication, semiconductor wafers undergo various processing operations. As the wafer is exposed to additional processing, the number of particles on the wafer surface may increase during IC fabrication.

Disclosure of Invention

The present disclosure provides a wafer processing module including a substrate support, a shutter and a measuring device. The substrate support is configured to support a wafer. The shutter is configured to move relative to the substrate support, wherein the shutter is proximate to a component of the wafer processing module. The measurement device is configured to measure a capacitance between the shutter and a component of the wafer processing module; and calculating a distance between the shutter and a component of the wafer processing module based on the measured capacitance.

The present disclosure provides a method for operating a wafer processing module, comprising: moving the shutter relative to the substrate support in the wafer processing module; determining a distance between the shutter and a wall of the wafer processing module using the measurement device; transferring the substrate to a substrate support in response to the distance being greater than a value; and resetting the shutter in response to the distance being equal to or less than the value.

The present disclosure provides a processing apparatus including a substrate support, a shield, and a measurement device. The shield is configured to move relative to the substrate support, wherein the shield is proximate to a component of the processing apparatus. The measurement device is configured to determine a distance between the shutter and a component of the processing module.

Drawings

Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying drawing figures. It should be noted that the various features are not drawn to scale in accordance with conventional practice in the industry. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.

FIG. 1 is a partial view of a processing module having an actuated shutter according to some embodiments;

FIG. 2 is a partial view of a processing module with a deactivated shutter according to some embodiments;

FIG. 3 is a partial view of a processing module having a prevention system including circuitry having a voltmeter and a power supply according to some embodiments;

FIG. 4 is a partial view of a processing module having a prevention system including a sensor according to some embodiments;

FIG. 5 is a flow diagram of a method describing monitoring shutter movement using a detection system in a processing module, according to some embodiments;

fig. 6 is a partial view of a processing module having a shutter with different body thicknesses according to some embodiments.

[ notation ] to show

100 processing module

110 shielding device

120 assembly

120A rod

120B bearing assembly

120C cylinder

130 substrate support/chuck

140 wafer

150A upper wall portion

150B wall

300 circuit

310 power supply

320 voltmeter

400 sensor

500 method

510 operation

520 operation

530 operation

540 operation

550 operation

600 shielding device

600t shielding device

Distance D

Distance D

Distance D

Detailed Description

The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course, these are merely examples, and are intended to be limiting. For example, forming a first feature over a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features are not in direct contact.

Furthermore, spatially relative terms, such as "below," "lower," "above," "upper," and the like, may be used herein to simplify description to describe one element or feature's relationship to another element or feature as illustrated in the figures. Spatially relative terms are intended to encompass different orientations of the device/element in use or operation in addition to the orientation depicted in the figures. The device may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein interpreted accordingly.

The term "nominal" as used herein refers to a desired or target value, and a range of values above and/or below the desired value, of a feature or parameter of a component or process operation set during the design phase of the product or process. The range of values is typically due to minor variations in manufacturing processes or tolerances.

The term "substantially" as used herein means that the value of a given quantity may vary based on the particular technology node associated with the subject semiconductor device. In some embodiments, the term "substantially" may indicate that a given amount of value varies within, for example, ± 5% of a target (or expected) value, based on a particular technology node.

The term "about" as used herein means that the value of a given quantity can vary based on the particular technology node associated with the subject semiconductor device. In some embodiments, the term "about" can indicate that a given amount of a value varies within, for example, 5-30% of the value (e.g., ± 5%, ± 10%, ± 20%, or ± 30% of the value), based on the particular technology node.

The term "vertical" as used herein means nominally perpendicular to the substrate surface.

The shutter provides spatial partitioning within the processing module. For example, a first region of partitionable spaces may be occupied by a substrate support (e.g., a chuck) and a second region of partitionable spaces may be occupied by another component to which the substrate support and/or a substrate (e.g., a wafer) needs to be shielded from. The shutter may be activated or deactivated by changing the position of the shutter relative to the position of the wafer and/or substrate support. For example, the shutter may be activated when raised relative to the position of the wafer/substrate support. Conversely, the shutter may be deactivated when lowered relative to the position of the wafer/substrate support.

Movement of the shutter in the preferred direction may be controlled via mechanical or electromechanical components including a number of components such as rods, bearings, cylinders, electronic controls, pneumatic lines, power sources, sensors, springs, and the like. The shutter wears the components of the assembly responsible for movement of the assembly in continuous use. Thus, the movement of the shutter may become less precise over time. For example, a moving shutter may slowly deviate from its path (e.g., become misaligned) and come into contact (e.g., rub) with an adjacent component (e.g., a wall of a process module). This contact may be slight but may be exacerbated as the shutter is more off its intended path. Inadvertent contact between the shutter and adjacent components can create scratches on the rubbing surface and can be a source of particles. The particles can migrate to the processed wafer and subsequently cause defects.

Embodiments described herein relate to a prevention method and system of monitoring a distance between a shutter and a reference point. The methods and systems described herein may be used to prevent inadvertent contact between the shutter and adjacent components due to deviations in shutter movement.

Fig. 1 is a cross-sectional view of a portion of a process module 100. The processing module 100 includes a shutter 110 that may be raised or lowered via the position of the assembly 120 relative to a substrate support or chuck 130 and a substrate or wafer 140. The processing module 100 may also include additional components not shown in fig. 1. Such components include, but are not limited to, additional wall portions, openings, heaters, motors, valves, pumps, magnets, showerheads, collimators, robotic arms, gas delivery lines, sensors, electronics, controllers, pump lines, and/or power supplies that can power the various components of the processing module 100. In some embodiments, the processing module 100 is an etch module, a deposition module, a module in a semiconductor manufacturing facility or other manufacturing facility that uses the shutter 110.

In some embodiments, the shutter 110 may move in a vertical direction along the z-axis. By way of example and not limitation, the shutter 110 may be configured to separate two compartments of a cluster tool. For example, the shutter 110 may block an opening for transferring the wafer 140 from one compartment of the cluster tool to another compartment (e.g., the process module 100). When the shutter 110 is raised, as shown in fig. 1, the shutter may be adjacent to the upper wall portion 150A of the process module 100. The lower portion of the wall 150B of the process module is also illustrated in fig. 1. The upper wall portion 150A and the lower wall portion 150B of the process module 100 are connected to portions of the process module that are not illustrated in fig. 1 for simplicity.

In some embodiments, assembly 120 includes a rod 120A, a bearing assembly 120B, and a cylinder 120C. The assembly 120 may include additional components not illustrated in fig. 1. Such components include, but are not limited to, pneumatic valves, motors, controllers, sensors, and/or other electronic components.

Fig. 2 illustrates the shutter 110 in a lower position (lower than the position of fig. 1) relative to the chuck 130 and the wafer 140, according to some embodiments. For example, at any point in time during the process performed in the process module 100, the shutter 110 may move between a low position (e.g., illustrated in fig. 2) and a high position (e.g., illustrated in fig. 1). Additionally, the shutter 110 may be switched between a high position and a low position (e.g., illustrated in fig. 1 and 2, respectively) as the wafer 140 enters or exits the processing module 100. The position of the shutter 110 is not limited to the illustrations of fig. 1 and 2. For example, the shutter 110 may have different "high" and "low" positions relative to the chuck 130, the wafer 140, or another component in the process module 100. Furthermore, the shape of the shutter 110 is not limited to the illustrations of fig. 1 and 2, and other shapes are within the spirit and scope of the present disclosure.

According to some embodiments, when the shutter 110 is raised, as shown in fig. 1, a gap D is formed between the upper wall portion 150A and the shutter 110. In some embodiments, an "optimal" value of the gap D in the range of about 0.5mm to about 1mm ensures that the shutter 110 does not contact the upper wall portion 150A when raised. However, over time, as individual components, such as assembly 120, wear, gap D may decrease. For example, when the gap D becomes zero, when the shutter 110 moves to the high position (e.g., as shown in fig. 1), the shutter 110 starts to contact the upper wall portion 150A. In some embodiments, inadvertent contact between, for example, the upper wall portion 150A and the shutter 110 may generate particles that may be detected on the wafer 140 in downstream inspection operations. In some embodiments, the shutter 110 may contact other components of the process module 100 when deviating from its intended position, rather than the upper wall portion 150A. The upper wall portion 150A is used herein as an example and not a limitation.

In some embodiments, replacement of wear components in the assembly 120 may reset the gap D to its optimal range, for example, between about 0.5mm to about 1mm, such that the shutter 110 does not contact the upper wall portion 150A when moving between the low and high positions illustrated in fig. 2 and 1, respectively. The foregoing preferred ranges are exemplary and not limiting. For example, other processing modules and shutter configurations may have different optimal ranges.

In some embodiments, a circuit having a power supply and a voltmeter may be used to monitor gap D. For example, fig. 3 illustrates such an arrangement, wherein the circuit 300 comprises an electrode connected to the upper wall portion 150A and another electrode connected to the shutter 110. In some embodiments, the upper wall portion 150A may serve as a reference point from which the distance to the shutter 110 may be measured and monitored using the circuit 300. According to some embodiments, circuit 300 includes a power supply 310 and a voltmeter 320, both power supply 310 and voltmeter 320 being connected in parallel with a capacitor formed by upper wall portion 150A and shutter 110. For example, each of the upper wall portion 150A and the shutter 110 may serve as a plate of the formed capacitor with a gap or distance D between the upper wall portion 150A and the shutter 110. Further, the circuit 300 may be configured such that the power source 310 and the voltmeter 320 may be independently connected and disconnected from the circuit 300 via electrical switches, which are not illustrated in fig. 3 for simplicity. In some embodiments, the upper wall portion 150A and the shutter 110 are electrically isolated from each other (e.g., they are not electrically connected to the same voltage potential, such as a ground reference voltage).

In some embodiments, the voltage reading 320 from the voltmeter can be calibrated to correspond to the gap or spacing D between the upper wall portion 150A (e.g., the reference point) and the shutter 110. This may be done, for example, as follows. For a known value of gap D (e.g., 1mm) and with voltmeter 320 off and power supply 310 connected to circuit 300, the capacitor formed by upper wall portion 150A and shutter 110 may be charged with charge Q. Subsequently, with power supply 310 disconnected and voltmeter 320 connected to circuit 300, a voltage corresponding to the charge stored in the capacitor is measured across the plates of the capacitor. More specifically, the measured voltage will be proportional to the charge Q stored in the capacitor and the gap D between the plates of the formed capacitor (e.g., upper wall portion 150A and shutter 110) according to the following capacitor equation:

ΔV＝Q·D/(_o·A)，

where Δ V is the voltage difference measured across the plates of the capacitor by voltmeter 320, Q is the charge stored in the capacitor, D is the gap between the plates of the capacitor,_ois the dielectric constant of free space, and a is the area between the plates of the capacitor. As the gap D between the upper wall portion 150A and the shutter 110 decreases over time, the voltage measured by the voltmeter 320 decreases in response to changes in the gap distance. This is because the other parameters of the formula remain unchanged. The above method can be used for several known values of the gap D (e.g., for 0.8mm, 0.6mm, 0.5mm, 0.2mm, etc.) to obtain a calibrationA curve or table showing the relationship between the voltage measured by voltmeter 320 and the corresponding gap D between the upper wall portion 150A and the shutter 110. Thus, at any given time, the voltage reading of voltmeter 320 in circuit 300 can be converted to a value for gap D.

In some embodiments, a galvanometer or current meter may be used in place of the voltmeter in circuit 300. The galvanometer or ammeter may be connected in series with respect to the capacitor formed by the upper wall portion 150A and the shutter 110. Thus, following the same method described above, the power supply 310 charges the capacitor to a fixed voltage, the capacitor is disconnected from the power supply 310, and the discharge current is measured using a current meter or a galvanometer. The discharge current may correspond to a gap or spacing D between the upper wall portion 150A and the shutter 110.

In some embodiments, the circuit 300 may include a capacitance meter configured to measure the capacitance between the upper wall portion 150A and the shutter 110 as a function of the distance D. For example, in the circuit 300, the voltmeter 320 and the power supply 310 may be replaced with a capacitance meter, wherein one terminal of the capacitance meter is electrically connected to the upper wall portion 150A, and the other terminal of the capacitance meter is electrically connected to the shutter 110.

Fig. 3 includes selected portions or elements of circuit 300, and additional elements may not be illustrated. By way of example, the additional elements may include electronic components such as transistors, resistors, signal amplifiers, digital controllers, input and output ports, connection ports, antennas, network and interface cards, logic circuits configured to perform comparisons and calculations, other power supplies, and the like. In some embodiments, the circuit 300 can be part of an electronic unit configured to provide a correlation between an electrical signal (e.g., digital or analog, voltage and/or current, capacitance, etc.) and a gap or spacing D between the upper wall portion 150A and the shutter 110 using a voltmeter, a galvanometer, a current meter, another electronic device, or a combination thereof.

In some embodiments, alternative means for measuring and monitoring distance (e.g., gap D) may be employed. For example, devices that may be used include optical sensors (e.g., cameras, infrared sensors, and laser distance sensors), ultrasonic sensors (e.g., reverse radar sensors), inductive proximity sensors, or any other type of sensor that can determine the distance between two objects (e.g., between the upper wall portion 150A and the shutter 110). For example, the above-described sensor may be attached to the upper wall portion 150A and configured to monitor a distance (e.g., gap D) between the upper wall portion 150A and the shutter 110. Fig. 4 illustrates such an arrangement, wherein a sensor 400 is attached to the upper wall portion 150A and is configured to measure or monitor the gap D ', from which the gap D' may be calculated. In some embodiments, the gap D' corresponds to the distance between the sensor 400 and the shutter 110. The location of sensor 400 on upper wall portion 150A is not limited to the depiction in fig. 4. For example, the placement of sensor 400 may depend on factors such as the geometry of upper wall portion 150A, the size of sensor 400 relative to upper wall portion 150A, or the type of sensor. The sensor 400 may not be mounted on the upper wall portion 150A adjacent to the shutter 110. For example, an optical sensor such as a camera may be mounted such that it views the upper wall portion 150A and the shutter 110 from the side; or the sensor 400 may be mounted in a direction diametrically opposite the upper wall portion 150A as long as the shutter 110 is in the line of sight of the sensor 400.

In some embodiments, the sensor 400 may communicate with a control unit or a computer outside the processing module 100 via a wired or wireless communication device. Thus, the sensor 400 may be part of a distance detection system that includes additional electronic components not shown in fig. 4. In some embodiments, the sensor 400 may be configured to provide a distance measurement such that the gap D between the upper wall portion 150A and the shutter 110 may be determined.

FIG. 5 is a flow diagram of a method 500 for monitoring shutter movement in a processing module. The present disclosure is not limited to this operational description and other operations are within the spirit and scope of the present disclosure. It should be appreciated that additional operations may be performed. Moreover, not all operations may be required to implement the disclosure provided herein. In addition, some of the operations shown in FIG. 2 may be performed simultaneously or in a different order. In some implementations, one or more other operations may be performed in addition to or in place of the presently described operations. For illustrative purposes, the method 500 will be described with reference to the embodiment shown in fig. 1 and 4.

Referring to fig. 5, the method 500 begins at operation 510, where the shutter is activated by moving the shutter relative to the substrate support. The shutter may be activated or deactivated by changing the position of the shutter relative to the position of the substrate (e.g., wafer) and/or substrate support (e.g., chuck). For example, the shutter may be activated when raised relative to the position of the wafer/substrate support and deactivated when lowered relative to the position of the wafer/substrate support. Fig. 2 depicts an exemplary initial position of the shutter 110, and fig. 1 depicts an exemplary final position of the shutter 110 after startup (e.g., after operation 510 of the method 500).

In fig. 1, the shutter 110 is adjacent to the upper wall portion 150A of the process module 100. According to some embodiments, at this position, a gap or spacing D is formed between the upper wall portion 150A and the shutter 110. In some embodiments, an optimal gap or spacing between the upper wall portion 150A and the shutter 110 ensures that the shutter 110 does not contact the upper wall portion 150A when moving between the positions shown in fig. 1 and 2. For example, the optimal gap or spacing D may be in the range of about 0.5mm to about 1 mm. However, the gap D is not limiting, and other optimal values of the gap D are possible depending on the geometry of the shutter 110 and the processing module 100. In some embodiments, friction between the upper wall portion 150A and the shutter 110 may generate particles that may be detected on the wafer 140 (e.g., in downstream inspection operations).

In other embodiments, the shutter 110 may be in contact with other components of the process module 100 (e.g., not a wall of the process module 100) when it is offset from its intended vertical path (e.g., in the z-direction). Accordingly, the upper wall portion 150A is used herein as an example only and not a limitation.

Referring to fig. 5 and operation 520, a gap D is measured between the shutter 110 and a wall of the process module (e.g., the upper wall portion 150A of the process module 100). For example, the gap or spacing D may be measured via the circuit 300 shown in fig. 3. In some embodiments, circuit 300 may include a power supply 310 and a voltmeter 320, both power supply 310 and voltmeter 320 connected in parallel with respect to a capacitor formed by upper wall portion 150A and shutter 110. Additionally, the circuit 300 may be configured to connect/disconnect the power source 310 and the voltmeter 320 from the circuit 300 via electrical switches, which are not illustrated in fig. 3. The voltage readings 320 from the voltmeter can be calibrated to correspond to the respective gaps or spacings D between the upper wall portion 150A and the shutter 110. For example, the voltage measured for a large spacing D (e.g., about 1mm) between the upper wall portion 150A and the shutter 110 may be greater than the voltage measured for a small spacing D (e.g., less than about 0.5 mm). This is because, according to some embodiments, different pitch values will correspond to different voltages measured by voltmeter 320 in circuit 300.

Alternatively, circuit 300 may include a galvanometer or ammeter instead of voltmeter 320. Thus, in the same manner as described above, the discharge current readings from the galvanometers or galvanometers may be calibrated to correspond to the respective gaps or spacings D between the upper wall portion 150A and the shutter 110. In some embodiments, the ammeter may be connected in series with respect to the capacitor formed by the upper wall portion 150A and the shutter 110.

In some embodiments, circuit 300 may include a capacitance meter instead of voltmeter 320 and power supply 310. The capacitance meter may be configured to measure the capacitance between the upper wall portion 150A and the shutter 110 as a function of the distance D.

In some embodiments, a sensor device (e.g., sensor 400 shown in fig. 4) may be used to measure the gap between the upper wall portion 150A and the shutter 110. By way of example and not limitation, the sensor device may be an optical sensor (e.g., a camera, an infrared sensor, a laser distance sensor), an ultrasonic sensor (e.g., a reverse radar sensor), an inductive proximity sensor, or any other type of sensor that can determine the distance between two objects (e.g., between the upper wall portion 150A and the shutter 110). For example, the above-described sensor may be attached to the upper wall portion 150A and configured to monitor a distance (e.g., gap D) between the upper wall portion 150A and the shutter 110, as shown in fig. 4.

Referring to FIG. 5 and operation 530 of the method 500, it is determined whether the measured gap is equal to or greater than a "critical" value. The "critical" value may be defined as an acceptable minimum spacing D (e.g., between the upper wall portion 150A and the shutter 110) that ensures contactless operation of the shutter 110. For example, the critical value may be set at the lower end (e.g., 0.5mm) of the range of the optimal spacing D. However, this is not limiting and other values may be selected depending on the shutter assembly and the processing module. For example, if the metrology gap or spacing D between the upper wall portion 150A and the shutter 110 is equal to or greater than a predetermined threshold, the wafer may be transferred into a process module for processing according to operation 540. On the other hand, if the measured gap or spacing D is not equal to or greater than the threshold value, the position of the shutter is reset according to operation 550.

In some embodiments, the position of the shutter 110 may be reset by replacing one or more components of the assembly (e.g., worn components) responsible for movement of the shutter 110. The components may be, for example, a rod 120A, a bearing assembly 120B, a cylinder 120C, or a combination thereof. In some embodiments, the entire assembly 120 may be replaced. In other embodiments, instead of replacing the wear parts of the assembly 120, the shutter 110 may be replaced with another shutter having a thinner body to increase the gap or spacing D between the upper wall portion and the shutter. For example, in fig. 6, the shutter 110 has been replaced with a thinner shutter 600t, which thinner shutter 600t may increase the gap or spacing between the upper wall portion 150A and the shutter 110 from D to D ", where D < D". For example, the body thickness 600t of the shutter 600 may be about 0.5mm thinner than the corresponding body thickness of the shutter 110. In some embodiments, a thinner shutter 600 may extend the life of the assembly 120. In other words, the shutter 600 may delay replacement of worn components of the assembly 120. In some embodiments, once the wear component of the assembly 120 (or the shutter 110) has been replaced, the clearance D (or D ") is monitored using operation 520 of the method 500.

Embodiments described herein relate to a prevention method and system that can be used to monitor the distance between an occluder in a processing module and a reference point. The methods and systems described herein may be used to prevent inadvertent contact between the shutter and adjacent components due to one or more wear components in the assembly responsible for shutter movement. In some embodiments, the method and system may include a sensor that may monitor the position of the shutter relative to a reference point (e.g., a wall or another component of the processing module). The sensor may be, for example, an optical sensor (e.g., camera, infrared sensor, laser distance sensor), an ultrasonic sensor (e.g., reverse radar sensor), an inductive proximity sensor, or other type of sensor that can measure the distance between the shutter and a reference point. In some embodiments, the system may include a circuit having a voltmeter, wherein the gap between the shutter and the reference point is calculated from a voltage difference measured between the shutter and the reference point. In some embodiments, a current meter or a galvanometer may be used instead of a voltmeter. Alternatively, a capacitance meter may be used to correlate the capacitance measurement to the distance between the shield and the reference point. If it is determined that the measured distance is below the predetermined value, a worn part responsible for the movement of the shutter is replaced, or the shutter may be replaced with another shutter having a thinner main body than the original shutter.

In some embodiments, a wafer processing module comprises: a substrate support configured to support a wafer; a shutter proximate to a component of the wafer processing module and configured to move relative to the substrate support; and a measuring device. In the wafer processing module, the measurement device is configured to measure a capacitance between the shutter and a component of the wafer processing module and to calculate a distance between the shutter and the component of the wafer processing module based on the measured capacitance. In some embodiments, the component of the wafer processing module comprises an upper wall portion of the wafer processing module. In some embodiments, the metrology device is electrically connected in parallel to a capacitor formed by the shutter and components of the wafer processing module. In some embodiments, the metrology device includes a first terminal and a second terminal, wherein the first terminal is electrically connected to the shutter and the second terminal is electrically connected to a component of the wafer processing module. In some embodiments, the measurement device is a capacitance meter. In some embodiments, the wafer processing module also includes an assembly configured to move the shutter. In some embodiments, the calculated distance is in a range between about 0.5mm and about 1 mm.

In some embodiments, a method includes moving a shutter relative to a substrate support in a wafer processing module and determining a distance between the shutter and a wall of the wafer processing module using a measurement device. In response to the distance being greater than a value, the method also includes transferring the substrate to a substrate support, and in response to the distance being equal to or less than the value, the method includes resetting the shutter. In some embodiments, resetting the shutter includes replacing one or more components of a moving assembly configured to move the shutter. In some embodiments, resetting the shutter includes replacing the shutter with another shutter having a thinner body than the shutter. In some embodiments, determining the distance between the shutter and the wall of the wafer processing module comprises: charging a capacitor formed by the wall of the shutter and the wafer processing module by a power supply; measuring a voltage across the capacitor; and converting the measured voltage to a distance between the shutter and a wall of the wafer processing module. In some embodiments, determining the distance between the shutter and the wall of the wafer processing module comprises: charging a capacitor formed by the wall of the shutter and the wafer processing module by a power supply; measuring the charge between the capacitors with a measuring device; and converting the measured charge into a distance between the shutter and a wall of the wafer processing module. In some embodiments, the measurement device comprises an optical sensor, an ultrasonic sensor, or an inductive proximity sensor.

In some embodiments, a processing apparatus includes a substrate support, a shutter proximate to a component of the processing apparatus and configured to move relative to the substrate support. The processing apparatus also includes a measurement apparatus configured to determine a distance between the shutter and a component of the processing module. In some embodiments, the measurement device comprises an optical sensor, an ultrasonic sensor, or an inductive proximity sensor. In some embodiments, the optical sensor comprises an infrared sensor or a laser sensor. In some embodiments, the optical sensor comprises a camera. In some embodiments, the ultrasonic sensor comprises a reverse radar sensor. In some embodiments, the distance ranges between about 0.5mm and 1 mm. In some embodiments, the component comprises a wall portion of the treatment device.

It should be understood that the detailed description section, and not the abstract section, is intended to be used to interpret the claims. The abstract section of the disclosure may set forth one or more, but not all possible embodiments of the disclosure as contemplated by the inventors, and is therefore not intended to limit the appended claims in any way.

The foregoing disclosure summarizes features of several embodiments so that those skilled in the art may better understand aspects of the disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.