阅读说明：本技术 显示基板的制造方法、显示基板和显示装置 (Manufacturing method of display substrate, display substrate and display device ) 是由 陈琳 杨成绍 马涛 王登峰 韩领 于 2019-10-10 设计创作，主要内容包括：本发明提供一种显示基板的制造方法、显示基板和显示装置,属于显示技术领域,其可至少部分解决现有的显示基板中残沙不良的问题。本发明的显示基板的制造方法包括提供基底,在基底上形成有钝化层；在所述钝化层背向所述基底一侧形成非晶态的氧化物导电材料层；在氧化物导电材料层上形成光刻胶图案,光刻胶图案具有暴露区域；对光刻胶图案的暴露区域内的氧化物导电材料层进行刻蚀,以形成镂空位置；去除光刻胶图案的暴露区域内的部分厚度的钝化层材料。(The invention provides a manufacturing method of a display substrate, the display substrate and a display device, belongs to the technical field of display, and can at least partially solve the problem of poor residual sand in the existing display substrate. The manufacturing method of the display substrate comprises the steps of providing a substrate, and forming a passivation layer on the substrate; forming an amorphous oxide conductive material layer on one side of the passivation layer, which faces away from the substrate; forming a photoresist pattern on the oxide conductive material layer, the photoresist pattern having an exposed region; etching the oxide conductive material layer in the exposed area of the photoresist pattern to form a hollow-out position; a portion of the thickness of the passivation layer material within the exposed region of the photoresist pattern is removed.)

1. A method for manufacturing a display substrate, comprising:

providing a substrate, and forming a passivation layer on the substrate;

forming an amorphous oxide conductive material layer on one side of the passivation layer, which faces away from the substrate;

forming a photoresist pattern on the oxide conductive material layer, wherein the photoresist pattern has an exposure area, and the photoresist in the exposure area is removed and the oxide conductive material layer at the corresponding position is exposed;

etching the oxide conductive material layer in the exposed area of the photoresist pattern to form a hollow-out position;

and removing a partial thickness of the passivation layer material in the exposed region of the photoresist pattern.

2. The manufacturing method according to claim 1, wherein the passivation layer comprises a first passivation sub-layer and a second passivation sub-layer which are stacked, the first passivation sub-layer is of the same material as the second passivation sub-layer and the second passivation sub-layer is structurally denser than the first passivation sub-layer, and the first passivation sub-layer is farther from the substrate than the second passivation sub-layer; the removing of the partial thickness of the passivation layer material within the exposed region of the photoresist pattern includes: and removing at least part of the thickness of the first passivation sub-layer in the exposed region of the photoresist pattern, wherein part of the thickness of the first passivation sub-layer in the exposed region of the photoresist pattern is reserved or the first passivation sub-layer in the exposed region of the photoresist pattern is completely removed.

3. The manufacturing method according to claim 2, wherein the etching of the oxide conductive material layer in the exposed region of the photoresist pattern is specifically wet etching using a first etching solution.

4. The method of manufacturing according to claim 3, wherein the removing of the at least a partial thickness of the first passivation sub-layer within the exposed region of the photoresist pattern comprises: and performing wet etching on the first passivation layer in the exposed area of the photoresist pattern by using second etching liquid.

5. The manufacturing method according to claim 4, wherein the passivation layer is made of silicon oxide or silicon nitride, the oxide conductive material layer is wet-etched by using the first etching solution, and the first etching solution and the second etching solution have the same composition and contain hydrofluoric acid.

6. The manufacturing method according to claim 4, wherein in the second etching liquid, a mass ratio a of hydrofluoric acid to the second etching liquid satisfies: a is more than or equal to 0.15 percent and less than or equal to 0.45 percent.

7. The method of manufacturing according to claim 2, wherein the removing of the at least a partial thickness of the first passivation sub-layer within the exposed region of the photoresist pattern comprises:

etching the first passivation sub-layer in the exposed area by adopting an anisotropic plasma etching process to a set depth inside the first passivation sub-layer, and then stopping etching;

and etching the residual first passivation sublayer by adopting an isotropic plasma etching process.

8. The manufacturing method according to claim 7, wherein the process gas of the isotropic plasma etching and the anisotropic plasma etching is the same; the bias power of the isotropic plasma etching is less than the source power; the bias power of the anisotropic plasma etching is greater than or equal to the source power.

9. The method of claim 7, wherein the process gas for the isotropic plasma etch and the anisotropic plasma etch are the same, wherein the source power for the isotropic plasma etch and the source power for the anisotropic plasma etch are the same, and wherein the bias power for the isotropic plasma etch is less than the bias power for the anisotropic plasma etch.

10. The method of claim 7, wherein the material of the passivation layer comprises silicon oxide or silicon nitride, and the process gas in the plasma etching process comprises SF6 and Cl 2.

11. The method of manufacturing of claim 10, wherein the source power is 30KW, the bias power for the anisotropic plasma etch is 30KW, and the bias power for the isotropic plasma etch is 15 KW.

12. The method of claim 10, wherein the gas flow rates of SF6 and Cl2 are 800 seem and 8000 seem, respectively.

13. The display substrate is characterized by comprising a substrate, a passivation layer arranged on the substrate, and an oxide conductor material layer arranged on one side, opposite to the substrate, of the passivation layer;

the oxide semiconductor layer is provided with a patterned hollow area;

the passivation layer is provided with a groove at a position corresponding to the hollow-out area of the oxide semiconductor layer, and the groove bottom of the groove is formed in the passivation layer.

14. The display substrate of claim 13, wherein the passivation layer has a first passivation sub-layer and a second passivation sub-layer stacked, the first passivation sub-layer is of the same material as the second passivation sub-layer and the second passivation sub-layer is structurally denser than the first passivation sub-layer, wherein the first passivation sub-layer is further away from the substrate than the second passivation sub-layer, and wherein the groove bottom of the groove is formed at an interface of the first passivation sub-layer and the second passivation sub-layer or within the first passivation sub-layer.

15. A display substrate manufactured by the method for manufacturing a display substrate according to any one of claims 1 to 12.

16. A display device comprising the display substrate according to any one of claims 13 to 14.

Technical Field

The invention belongs to the technical field of display, and particularly relates to a manufacturing method of a display substrate, the display substrate and a display device.

Background

The structure of the existing display substrate is usually to fabricate a driving circuit layer on a glass or flexible substrate, and then fabricate electrodes on the driving circuit layer. The driver circuit layer typically includes drive transistors, the uppermost surface of which is typically a passivation layer. The upper surface of the passivation layer is typically provided with an amorphous transparent oxide conductor material such as Indium Tin Oxide (ITO) as an electrode.

Amorphous oxide materials are inevitably subjected to crystallization during the production process, and are known as residual sand. These crystalline grains cannot be removed in a typical etching process for an amorphous oxide material. The remaining crystalline particles may adversely affect the display effect, for example, the poor image retention may be increased.

Disclosure of Invention

The invention at least partially solves the problem that the existing amorphous oxide material is easy to generate poor residual sand during etching, and provides a manufacturing method of a display substrate, the display substrate and a display device.

According to a first aspect of the present invention, there is provided a method of manufacturing a display substrate, comprising:

providing a substrate, and forming a passivation layer on the substrate;

forming an amorphous oxide conductive material layer on one side of the passivation sublayer, which faces away from the substrate;

forming a photoresist pattern on the oxide conductive material layer, wherein the photoresist pattern has an exposure area, and the photoresist in the exposure area is removed and the oxide conductive material layer at the corresponding position is exposed;

etching the oxide conductive material layer in the exposed area of the photoresist pattern to form a hollow-out position;

and removing a partial thickness of the passivation layer material in the exposed region of the photoresist pattern.

Optionally, the passivation layer comprises a first passivation sub-layer and a second passivation sub-layer which are stacked, the first passivation sub-layer is the same material as the second passivation sub-layer and the second passivation sub-layer is structurally denser than the first passivation sub-layer, and the first passivation sub-layer is farther away from the substrate than the second passivation sub-layer; the removing of the partial thickness of the passivation layer material within the exposed region of the photoresist pattern includes removing at least a partial thickness of the first passivation layer within the exposed region of the photoresist pattern, wherein the partial thickness of the first passivation layer within the exposed region of the photoresist pattern is retained or the first passivation layer within the exposed region of the photoresist pattern is completely removed.

Optionally, the etching of the oxide conductive material layer in the exposed region of the photoresist pattern is specifically wet etching with a first etching solution.

Optionally, the removing of at least a partial thickness of the first passivation sub-layer in the exposed region of the photoresist pattern comprises: and performing wet etching on the first passivation layer in the exposed area of the photoresist pattern by using second etching liquid.

Optionally, the passivation layer is made of silicon oxide or silicon nitride, the oxide conductive material layer is wet-etched by using the first etching solution, and the first etching solution and the second etching solution have the same composition and contain hydrofluoric acid.

Optionally, in the second etching solution, a mass ratio a of hydrofluoric acid to the second etching solution satisfies: a is more than or equal to 0.15 percent and less than or equal to 0.45 percent.

Optionally, the removing of at least a partial thickness of the first passivation sub-layer in the exposed region of the photoresist pattern comprises:

etching the first passivation sub-layer in the exposed area by adopting an anisotropic plasma etching process to a set depth inside the first passivation sub-layer, and then stopping etching;

and etching the residual first passivation sublayer by adopting an isotropic plasma etching process.

Optionally, the process gas of the isotropic plasma etching and the anisotropic plasma etching is the same; the bias power of the isotropic plasma etching is less than the source power; the bias power of the anisotropic plasma etching is greater than or equal to the source power.

Optionally, the process gas of the isotropic plasma etching and the process gas of the anisotropic plasma etching are the same, the source power of the isotropic plasma etching and the source power of the anisotropic plasma etching are the same, and the bias power of the isotropic plasma etching is smaller than that of the anisotropic plasma etching.

Optionally, the material of the passivation layer includes silicon oxide or silicon nitride, and the process gas in the plasma etching process includes SF6 and Cl 2.

Optionally, the source power is 30KW, the bias power of the anisotropic plasma etching is 30KW, and the bias power of the isotropic plasma etching is 15 KW.

Alternatively, the gas flow rates of SF6 and Cl2 are 800sccm and 8000sccm, respectively.

According to a second aspect of the present invention, a display substrate is provided, which includes a substrate, a passivation layer disposed on the substrate, and an oxide conductor material layer disposed on a side of the passivation layer opposite to the substrate; the oxide semiconductor layer is provided with a patterned hollow area; the passivation layer is provided with a groove at a position corresponding to the hollow-out area of the oxide semiconductor layer, and the groove bottom of the groove is formed in the passivation layer.

Optionally, the passivation layer has a first passivation sub-layer and a second passivation sub-layer stacked, the first passivation sub-layer is of the same material as the second passivation sub-layer and the second passivation sub-layer is structurally denser than the first passivation sub-layer, wherein the first passivation sub-layer is further away from the substrate than the second passivation sub-layer, and the groove bottom of the groove is formed at the interface of the first passivation sub-layer and the second passivation sub-layer or in the first passivation sub-layer. And to provide a display substrate produced by the method for producing a display substrate of the first aspect of the invention.

According to a third aspect of the invention, there is provided a display device comprising a display substrate according to the second aspect of the invention.

Drawings

Fig. 1 is a flow chart of a method of forming an amorphous oxide pattern on a passivation layer in accordance with an embodiment of the present invention;

FIGS. 2 a-2 d are cross-sectional views of a product at various stages in an example of forming an amorphous oxide pattern on a passivation layer, in accordance with embodiments of the present invention;

FIGS. 3 a-3 d are product microscope views of an experimental example of forming an amorphous oxide pattern on a passivation layer according to an embodiment of the present invention;

FIGS. 4 a-4 b are product microscope views of an experimental example of forming an amorphous oxide pattern on a passivation layer according to an embodiment of the present invention;

wherein the reference numerals are: 1. a substrate; 21. a first passivation sub-layer; 22. a second passivation sub-layer; 23. a third passivation sub-layer; 3. a layer of oxide conductive material; 31. residual sand; 4. a photoresist pattern.

Detailed Description

In order to make the technical solutions of the present invention better understood, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.