阅读说明：本技术 用于制造热电模块的方法 (Method for producing a thermoelectric module ) 是由 于尔根·格林瓦尔德 迈克尔·莫泽 托马斯·普阿德勒尔 于 2018-03-06 设计创作，主要内容包括：本发明涉及一种用于制造热电装置(26)的热电模块(1)的方法。实现了模块(1)的简化且成本有效的制造,其特征在于提供了配备有热电活性半导体(9)的导电载体(2),随后其中设置有半导体(9)的载体(2)被分割成多个部件(16),所述多个部件分别形成这种模块(1),其中相应的模块(1)具有载体(2)的载体部分(17)和半导体(9)的半导体部分(18)。本发明还涉及用于制造这种热电装置(26)的方法、这种模块(1)和这种装置(26)。(The invention relates to a method for producing a thermoelectric module (1) of a thermoelectric device (26). A simplified and cost-effective production of the module (1) is achieved, characterized in that an electrically conductive carrier (2) provided with a thermoelectrically active semiconductor (9) is provided, whereafter the carrier (2) in which the semiconductor (9) is arranged is divided into a plurality of components (16) which respectively form such a module (1), wherein the respective module (1) has a carrier part (17) of the carrier (2) and a semiconductor part (18) of the semiconductor (9). The invention also relates to a method for producing such a thermoelectric device (26), such a module (1) and such a device (26).)

1. Method for producing a thermoelectric module (1) of a thermoelectric device (26), having the following method steps:

-providing an electrically conductive carrier (2),

-applying a thermoelectrically active semiconductor (9) onto one side (7) of the carrier (2),

-dividing the carrier (2) provided with the semiconductor (9) into a plurality of components (16), such that the respective components (16) form such a module (1) having a carrier part (17) and a semiconductor part (18).

2. The method of claim 1, wherein the first and second light sources are selected from the group consisting of,

it is characterized in that the preparation method is characterized in that,

before the singulation, an electrically conductive cover layer (11) is applied to the side (10) of the semiconductor (9) facing away from the carrier (2), so that each module (1) also has a cover layer section (19) after singulation.

3. The method of claim 2, wherein the first and second light sources are selected from the group consisting of,

it is characterized in that the preparation method is characterized in that,

the cover layer (11) is applied such that a cover layer thickness (12) of the cover layer (11) corresponds to the carrier thickness (6) of the carrier (2).

4. The method of any one of claims 1 to 3,

it is characterized in that the preparation method is characterized in that,

the semiconductor (9) is applied to the entire side (7) of the carrier (2).

5. The method of any one of claims 2 to 4,

it is characterized in that the preparation method is characterized in that,

the cover layer (11) is applied to the entire side (10) of the semiconductor (9) facing away from the carrier (2).

6. The method of any one of claims 1 to 5,

it is characterized in that the preparation method is characterized in that,

the semiconductor (9) is applied to the carrier (2) by means of a vacuum-based coating method.

7. The method of any one of claims 1 to 6,

it is characterized in that the preparation method is characterized in that,

at least two longitudinal cuts (14) extending in the longitudinal direction (3) and spaced apart from each other in a transverse direction (4) extending transversely to the longitudinal direction (3) and at least two transverse cuts (15) extending in the transverse direction (4) and spaced apart in the longitudinal direction (3) are formed for the division.

8. The method of claim 7, wherein the first and second light sources are selected from the group consisting of,

it is characterized in that the preparation method is characterized in that,

the longitudinal cuts (14) and/or the transverse cuts (15) are formed equidistantly.

9. The method according to claim 1 or 8,

it is characterized in that

The carrier (2) provided with the semiconductor (9) is divided by sawing or cutting.

10. The method of any one of claims 1 to 9,

it is characterized in that the preparation method is characterized in that,

a carrier (2) made of a metal or of a metal alloy is provided.

11. A method for producing a thermoelectric device (26) having the following method steps:

-manufacturing a thermoelectric module (1) according to any of claims 1 to 10, wherein a P-type doped P-type semiconductor (20) is applied as semiconductor (9),

-manufacturing a thermoelectric module (1) according to any of claims 1 to 10, wherein an N-type doped N-type semiconductor (23) is applied as semiconductor (9),

-arranging and electrically connecting the modules (1) in series such that such modules (1, 22) with P-type semiconductor portions (21) and such modules (1, 25) with N-type semiconductor portions (24) are alternately in contact with each other.

12. A thermoelectric module (1) of a thermoelectric device (26) having a thermoelectrically active semiconductor portion (18) applied to a carrier portion (17), wherein the module (1) is manufactured according to the method of any one of claims 1 to 10.

13. A thermoelectric device (26), in particular a peltier element (27), for a heat exchanger (32), wherein the device (26) is manufactured according to the method of claim 11.