阅读说明：本技术 多站式沉积工艺的串气检测方法、设备及可读存储介质 (Method and device for detecting gas leakage of multi-station deposition process and readable storage medium ) 是由 周烽 万先进 左明光 宋锐 李�远 熊少游 李远博 于 2019-09-12 设计创作，主要内容包括：本发明提供了一种多站式沉积工艺的串气检测方法、设备及可读存储介质,串气检测方法包括如下步骤：提供一多站式沉积设备,通过多站式沉积设备对一枚或多枚晶圆进行多站式沉积工艺,多站式沉积设备具有位于同一腔室中的多个用于容纳多枚晶圆进行多站式沉积工艺的站位；对晶圆表面沉积的薄膜进行薄膜均匀性检测；对多站式沉积工艺中所供给的工艺气体进行流量检测；根据薄膜均匀性检测和供气流量检测的结果判断多站式沉积工艺的过程中是否出现串气。本发明通过引入一种新的多站式沉积工艺的串气检测方法、设备及可读存储介质,通过进行薄膜均匀性检测及供气流量检测,及时发现多站式沉积工艺过程中出现的串气,从而确保了薄膜沉积质量以及产品良率。(The invention provides a gas cross detection method, equipment and a readable storage medium for a multi-station deposition process, wherein the gas cross detection method comprises the following steps: providing a multi-station deposition device, and performing a multi-station deposition process on one or more wafers through the multi-station deposition device, wherein the multi-station deposition device is provided with a plurality of stations which are positioned in the same chamber and used for accommodating the wafers to perform the multi-station deposition process; carrying out film uniformity detection on the film deposited on the surface of the wafer; detecting the flow of the process gas supplied in the multi-station deposition process; and judging whether gas cross-over occurs in the process of the multi-station deposition process according to the results of the film uniformity detection and the gas supply flow detection. The invention introduces a new gas cross detection method, equipment and readable storage medium of the multi-station deposition process, and finds gas cross in the multi-station deposition process in time by performing film uniformity detection and gas supply flow detection, thereby ensuring the film deposition quality and the product yield.)

1. A gas cross detection method of a multi-station deposition process is characterized by comprising the following steps:

providing a multi-station deposition device, and performing the multi-station deposition process on one or more wafers through the multi-station deposition device, wherein the multi-station deposition device is provided with a plurality of stations which are positioned in the same chamber and used for accommodating the plurality of wafers to perform the multi-station deposition process;

carrying out film uniformity detection on the film deposited on the surface of the wafer after the multi-station type deposition process is completed;

detecting the gas supply flow of the process gas supplied in the multi-station deposition process;

and judging whether gas cross-over occurs in the process of the multi-station deposition process according to the results of the film uniformity detection and the gas supply flow detection.

2. The cross-gas detection method of the multi-station deposition process as claimed in claim 2, wherein: the film uniformity detection includes detection of thickness uniformity of the film.

3. The cross-gas detection method of the multi-station deposition process as claimed in claim 1, wherein: the film comprises a metal film, and the film uniformity detection comprises detection of the sheet resistance uniformity of the film.

4. The cross-gas detection method of the multi-station deposition process as claimed in claim 1, wherein: dividing the wafer of any station into an adjacent area and a non-adjacent area according to the distance between the wafer and the wafers on other stations when the multi-station deposition process is carried out, and judging whether gas cross occurs in the process of the multi-station deposition process according to the film uniformity detection results of the adjacent area and the non-adjacent area.

5. The cross-gas detection method of the multi-station deposition process as claimed in claim 1, wherein: the process gas is various, when the multi-station type deposition process is carried out, various process gases are sequentially introduced into each station, and whether the gas cross-over occurs in the process of the multi-station type deposition process is judged by detecting whether different process gases are introduced into each station at any time.

6. A gas leakage detection device of a multi-station deposition process is characterized in that: the method comprises the following steps:

the film uniformity detection module is used for carrying out film uniformity detection on the film deposited on the surface of the wafer after the multi-station deposition process is finished;

the gas supply flow detection module is used for detecting the gas supply flow of the process gas supplied in the multi-station deposition process;

the controller is used for judging whether gas cross-flow occurs in the process of the multi-station type deposition process according to the results of the film uniformity detection and the gas supply flow detection;

the controller includes a memory and a processor.

7. The cross-gas detection apparatus of the multi-station deposition process of claim 6, wherein: the film uniformity detection module comprises a film thickness detection unit for detecting the thickness uniformity of the film.

8. The cross-gas detection apparatus of the multi-station deposition process of claim 6, wherein: the film comprises a metal film, and the film uniformity detection module comprises a square resistance detection unit for detecting the square resistance uniformity of the film.

9. The cross-gas detection apparatus of the multi-station deposition process of claim 6, wherein: the film uniformity detection module comprises a wafer partition unit, wherein the wafer partition comparison unit divides the wafer of any station into an adjacent area and a non-adjacent area according to the distance between the wafer of the other station and the wafer of the multi-station type deposition process, and respectively obtains the film uniformity detection results of the adjacent area and the non-adjacent area.

10. The cross-gas detection apparatus of the multi-station deposition process of claim 6, wherein: the process gas is various, the gas supply flow detection module comprises a plurality of flow detection units, and the flow detection units correspond to the process gas in various manners one by one and detect the flow of the process gas changing along with time.

11. A computer-readable storage medium having stored thereon a computer program, characterized in that: the computer program, when executed by a processor, implements a method of cross gas detection for a multi-station deposition process as claimed in any one of claims 1-5.

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to a gas leakage detection method and device for a multi-station deposition process and a readable storage medium.

Background

In a semiconductor manufacturing process, a thin film deposition process is a critical process. The configuration of equipment in which multiple stations are provided in the same chamber to accommodate multiple wafers has found wide application due to its unique advantages in equipment cost control. The multi-station sequential deposition process (multi-station sequential deposition) is characterized in that a plurality of wafers are controlled to sequentially pass through each station to deposit a film, the obtained film is better in deposition uniformity, and the uniformity among the wafers is not influenced by the positions of the stations.

At present, in the multi-station deposition process, a spray header is arranged above each station to supply process gas, a film is deposited on the surface of a wafer, and the stations are isolated by gas curtains, so that the process atmosphere conditions of the stations are relatively independent, and the defects of poor film deposition uniformity and the like caused by gas leakage are avoided.

However, parameters such as the supply flow rate and the duration of the process gas are important adjustable parameters of the multi-station deposition process, and when a process menu (recipe) is adjusted, the pressure balance between each station may be broken along with the adjustment of the flow rate and the process time of the process gas, so that a gas cross-over phenomenon occurs between each station. If the gas cross-over phenomenon caused by menu debugging can not be found in time, the film deposition quality and the product yield of the product wafer can be influenced.

Therefore, there is a need for a new method, apparatus and readable storage medium for detecting cross-gas in a multi-station deposition process, which solves the above problems.

Disclosure of Invention

In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a method, an apparatus and a readable storage medium for detecting out-of-gas in a multi-station deposition process, which are used to solve the problem that the out-of-gas phenomenon caused by menu debugging cannot be found in time in the prior art, and further the film deposition quality and the product yield of a product wafer are affected.

In order to achieve the above and other related objects, the present invention provides a cross gas detection method for a multi-station deposition process, comprising the steps of:

providing a multi-station deposition device, and performing the multi-station deposition process on one or more wafers through the multi-station deposition device, wherein the multi-station deposition device is provided with a plurality of stations which are positioned in the same chamber and used for accommodating the plurality of wafers to perform the multi-station deposition process;

carrying out film uniformity detection on the film deposited on the surface of the wafer after the multi-station type deposition process is completed;

detecting the gas supply flow of the process gas supplied in the multi-station deposition process;

and judging whether gas cross-over occurs in the process of the multi-station deposition process according to the results of the film uniformity detection and the gas supply flow detection.

As an alternative of the invention, the film uniformity test comprises a test of the thickness uniformity of the film.

As an alternative of the present invention, the thin film comprises a metal thin film, and the thin film uniformity test comprises a test of the sheet resistance uniformity of the thin film.

As an alternative of the present invention, when the multi-station deposition process is performed, the wafer at any station is divided into an adjacent area and a non-adjacent area according to the distance between the wafer and the wafer at other stations, and whether or not a cross gas occurs in the multi-station deposition process is determined according to the result of the film uniformity detection in the adjacent area and the non-adjacent area.

As an alternative of the present invention, the number of the process gases is multiple, when the multi-station deposition process is performed, multiple process gases are sequentially introduced into each station, and whether a cross gas occurs in the process of the multi-station deposition process is determined by detecting whether different process gases are introduced into each station at any time.

The invention also provides a gas leakage detection device for the multi-station deposition process, which is characterized in that: the method comprises the following steps:

the film uniformity detection module is used for carrying out film uniformity detection on the film deposited on the surface of the wafer after the multi-station deposition process is finished;

the gas supply flow detection module is used for detecting the gas supply flow of the process gas supplied in the multi-station deposition process;

the controller is used for judging whether gas cross-flow occurs in the process of the multi-station type deposition process according to the results of the film uniformity detection and the gas supply flow detection;

the controller comprises a memory and a processor, the memory storing a computer program, the computer program being executed by the processor for performing the detection method of the invention.

As an alternative of the present invention, the thin film uniformity detection module includes a film thickness detection unit for detecting thickness uniformity of the thin film.

As an alternative of the present invention, the thin film includes a metal thin film, and the thin film uniformity detection module includes a sheet resistance detection unit for detecting sheet resistance uniformity of the thin film.

As an alternative of the present invention, the film uniformity detection module includes a wafer partitioning unit, and the wafer partitioning comparison unit divides the wafer at any station into an adjacent area and a non-adjacent area according to the distance between the wafer and the wafer at other stations during the multi-station deposition process, and obtains the film uniformity detection results of the adjacent area and the non-adjacent area respectively.

As an alternative of the present invention, the process gas is a plurality of process gases, and the supply gas flow rate detection module includes a plurality of flow rate detection units, and the plurality of flow rate detection units correspond to the plurality of process gases one by one and detect flow rates of the process gases changing with time.

The present invention also provides a computer-readable storage medium having stored thereon a computer program characterized in that: the computer program, when executed by a processor, implements a cross-gas detection method of a multi-station deposition process according to the present invention.

As described above, the present invention provides a method, an apparatus and a readable storage medium for detecting cross gas in a multi-station deposition process, which have the following advantages:

the invention introduces a new gas cross detection method, equipment and readable storage medium of the multi-station deposition process, and finds gas cross in the multi-station deposition process in time by performing film uniformity detection and gas supply flow detection, thereby ensuring the film deposition quality and the product yield.

Drawings

Fig. 1 is a flowchart illustrating a cross gas detection method of a multi-station deposition process according to an embodiment of the present invention.

Fig. 2 is a schematic open-chamber view of a multi-station deposition apparatus according to an embodiment of the invention.

Fig. 3 is a schematic diagram illustrating various stations in a multi-station deposition apparatus according to a first embodiment of the invention.

Fig. 4 is a schematic diagram illustrating selected adjacent regions on a single wafer according to one embodiment of the present invention.

Fig. 5 is a schematic diagram illustrating the distribution of sheet resistance of a normal process wafer according to an embodiment of the invention.

Fig. 6 is a schematic diagram illustrating a distribution of sheet resistance of a cross-gas abnormal process wafer according to an embodiment of the invention.

FIG. 7 is a schematic diagram showing the process gas as a function of time during a normal process according to one embodiment of the present invention.

Fig. 8 is a schematic diagram showing a time-dependent change of the process gas during abnormal gas leakage according to the first embodiment of the present invention.

FIG. 9 is a schematic diagram showing the change of the argon flow rate with time according to the first embodiment of the present invention.

Description of the element reference numerals

100 standing position

100a first station

100b second station

100c third station

100d fourth station

101 wafer

101a neighborhood

101b first distribution area

101c second distribution area

101d third distribution area

101e fourth distribution area

101f fifth distribution area

101g sixth distribution area

101h seventh distribution area

101i eighth distribution area

101j ninth distribution area

102 shower head

103 plasma

S1-S4 steps 1) -4)

Detailed Description

The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.

Please refer to fig. 1 to 9. It should be noted that the drawings provided in the present embodiment are only schematic and illustrate the basic idea of the present invention, and although the drawings only show the components related to the present invention and are not drawn according to the number, shape and size of the components in actual implementation, the form, quantity and proportion of the components in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.