Gallium nitride-based field effect transistor and preparation method thereof
阅读说明:本技术 一种氮化镓基场效应晶体管及其制备方法 (Gallium nitride-based field effect transistor and preparation method thereof ) 是由 于洪宇 曾凡明 汪青 林新鹏 周智辉 于 2019-11-19 设计创作,主要内容包括:本发明实施例公开了一种氮化镓基场效应晶体管及其制备方法,其中氮化镓基场效应晶体管结构包括:衬底、缓冲层、背势垒层、沟道层、势垒层、p型栅层和钝化层;与p型栅层接触的栅极,以及与势垒层接触的源极和漏极,其中,栅极位于第一区域,源极和漏极位于第二区域,p型栅层在第二区域的膜层中的p型掺杂剂未激活。显著改善了栅极刻蚀工艺,解决传统工艺中p型材料必须完全去除的问题,使得刻蚀的容错率更低,适合于大批量生产,这种技术方法增加了栅极刻蚀的工艺窗口宽度,不受刻蚀工艺精度限制,使得栅极刻蚀可控性高,重复性好。(The embodiment of the invention discloses a gallium nitride-based field effect transistor and a preparation method thereof, wherein the gallium nitride-based field effect transistor structure comprises: the device comprises a substrate, a buffer layer, a back barrier layer, a channel layer, a barrier layer, a p-type gate layer and a passivation layer; and a source and a drain in contact with the barrier layer, wherein the gate is located in the first region, the source and the drain are located in the second region, and the p-type dopant in the film layer of the p-type gate layer in the second region is not activated. The technical method increases the width of a process window of gate etching, is not limited by the precision of the etching process, and ensures high controllability and good repeatability of the gate etching.)
1. A gallium nitride-based field effect transistor, comprising:
the device comprises a substrate, a buffer layer, a back barrier layer, a channel layer, a barrier layer, a p-type gate layer and a passivation layer;
a gate in contact with the p-type gate layer, and a source and a drain in contact with the barrier layer, wherein the gate is in a first region, the source and the drain are in a second region, and the p-type dopant in the p-type gate layer in a film layer of the second region is not activated.
2. The gallium nitride-based field effect transistor of claim 1, wherein the p-type gate layer has a greater film thickness in the first region than in the second region.
3. The gallium nitride-based field effect transistor of claim 2, wherein the p-type gate layer has a film thickness in the second region in the range of 2nm to 300 nm.
4. The gallium nitride-based field effect transistor of claim 1, wherein the material of the p-type gate layer comprises at least one of p-GaN, p-AlGaN.
5. A preparation method of a gallium nitride-based field effect transistor is characterized by comprising the following steps:
providing an epitaxial wafer, wherein the epitaxial wafer comprises a substrate, a buffer layer, a back barrier layer, a channel layer, a barrier layer and a p-type gate layer; wherein the dopant in the p-type gate layer is not activated;
forming a grid mask on the surface of the p-type grid layer;
thinning the part of the p-type gate layer which is not covered by the gate mask;
removing the gate mask;
forming a dielectric isolation layer on the p-type gate layer;
etching the dielectric isolation layer to expose part of the p-type gate layer, wherein the exposed region of the p-type gate layer is a gate position region;
selectively activating dopants in a p-type gate layer of the gate location region;
forming a passivation layer on the p-type gate layer;
forming a grid electrode, a source electrode and a drain electrode; wherein the gate is formed in a first region, and the source and the drain are formed in a second region; in the first region, the p-type dopant of the p-type gate layer is activated, and in the second region, the p-type dopant of the p-type gate layer is not activated.
6. The method according to claim 5, wherein the forming a gate mask on the surface of the p-type gate layer comprises:
depositing a grid mask dielectric layer on the surface of the p-type grid layer;
manufacturing a photoresist mask on the surface of the grid mask dielectric layer;
and etching the grid mask dielectric layer to form a grid mask at the grid position, wherein the p-type grid layer which is not covered by the grid mask leaks out.
7. The method for manufacturing a gallium nitride-based field effect transistor according to claim 5, wherein the thinning of the portion of the p-type gate layer not covered by the gate mask comprises:
and etching the part of the p-type gate layer which is not covered by the gate mask so that the thickness of the part of the p-type gate layer which is not covered by the gate mask is smaller than that of the part of the p-type gate layer which is covered by the gate mask.
8. The method of claim 5, wherein the forming a gate in the first region comprises:
manufacturing a grid electrode contact window in the grid electrode position area in the first area through photoetching and etching, and activating the p-type grid electrode layer leaked from the grid electrode contact window;
and manufacturing a grid electrode in the grid electrode contact window, and making the grid electrode contact with the p-type grid electrode layer leaked from the contact window.
9. The method of manufacturing a gallium nitride-based field effect transistor according to claim 5, wherein forming the source electrode and the drain electrode in the second region comprises:
manufacturing an ohmic contact window at the source electrode position and the drain electrode position in the second region by etching; the ohmic contact window leaks out of a portion of the barrier layer;
evaporating ohmic contact metal at the source electrode position and the drain electrode position;
etching away metal materials except the ohmic contact metal on the source electrode position and the drain electrode position to form the source electrode and the drain electrode;
and annealing the source electrode and the drain electrode through an annealing process to form metal semiconductor ohmic contact.
10. The method of claim 5, wherein the forming the source and the drain in the second region comprises:
manufacturing an ohmic contact window at the source electrode position and the drain electrode position in the second region by etching; the ohmic contact window leaks out of a portion of the barrier layer;
forming a photoresist layer on the medium isolation layer;
removing the photoresist at the source electrode position and the drain electrode position;
evaporating ohmic contact metal at the source electrode position and the drain electrode position;
removing the photoresist layer;
and annealing the source electrode and the drain electrode through an annealing process to form metal semiconductor ohmic contact.
Technical Field
The embodiment of the invention relates to the technical field of semiconductor devices, in particular to a gallium nitride-based field effect transistor and a preparation method thereof.
Background
Conventional gallium nitride (GaN) -based heterojunction transistors are generally depletion-Mode normally-on structures (D-modes), and enhanced normally-off devices (E-modes) are more desirable in circuit design because circuits using such devices have high power-down safety and simple protection circuits. There are many conventional ways to implement an enhancement mode GaN-based heterojunction transistor, such as a trench gate structure, a gate bottom fluorine ion implantation, a metal insulator semiconductor gate structure incorporating a trench gate, a p-type gate structure, a stacked structure, and the like. The p-type gate structure is a common E-Mode structure, and is simple in structure and easy to process. The conventional process method for realizing the p-type gate is to use photoetching, dielectric deposition, corrosion and plasma dry etching (ICP) techniques to manufacture a mask at a gate prefabrication position, and then remove the p-type material in a region outside the gate prefabrication position by an etching method, thereby realizing the E-Mode device with the p-type gate structure.
Fig. 1 is a schematic diagram of a structure of a gan-based fet provided in the prior art, and referring to fig. 1, includes a
Disclosure of Invention
The embodiment of the invention provides a gallium nitride-based field effect transistor and a preparation method thereof, which can reduce the process fault tolerance and ensure the working characteristics of devices.
In a first aspect, an embodiment of the present invention provides a gallium nitride-based field effect transistor, including:
the device comprises a substrate, a buffer layer, a back barrier layer, a channel layer, a barrier layer, a p-type gate layer and a passivation layer;
the p-type gate layer is in contact with the p-type gate layer, and the source electrode and the drain electrode penetrate through the p-type gate layer and the passivation layer and are in contact with the barrier layer, wherein the gate electrode is located in a first region, the source electrode and the drain electrode are located in a second region, and p-type dopants in the p-type gate layer in a film layer of the second region are not activated.
Optionally, the film thickness of the p-type gate layer in the first region is greater than the film thickness of the second region.
Optionally, the thickness of the film layer of the p-type gate layer in the second region ranges from 2nm to 300 nm.
Optionally, the material of the p-type gate layer includes at least one of p-GaN and p-AlGaN.
In a second aspect, an embodiment of the present invention provides a method for manufacturing a gallium nitride-based field effect transistor, where the method includes:
providing an epitaxial wafer, wherein the epitaxial wafer comprises a stacked substrate, a buffer layer, a back barrier layer, a channel layer, a barrier layer and a p-type gate layer; wherein the dopant in the p-type gate layer is not activated;
forming a grid mask on the surface of the p-type grid layer;
thinning the part of the p-type gate layer which is not covered by the gate mask;
removing the gate mask;
forming a dielectric isolation layer on the p-type gate layer;
etching the dielectric isolation layer to expose part of the p-type gate layer, wherein the exposed region of the p-type gate layer is a gate position region;
selectively activating dopants in a p-type gate layer of the gate location region;
forming a passivation layer on the p-type gate layer;
forming a grid electrode, a source electrode and a drain electrode; wherein the gate is formed in a first region, and the source and the drain are formed in a second region; in the first region, the p-type dopant of the p-type gate layer is activated, and in the second region, the p-type dopant of the p-type gate layer is not activated.
Optionally, the forming a gate mask on the surface of the p-type gate layer includes:
depositing a grid mask dielectric layer on the surface of the p-type grid layer;
manufacturing a photoresist mask on the surface of the grid mask dielectric layer;
and etching the grid mask dielectric layer to form a grid mask at the grid position, wherein the p-type grid layer which is not covered by the grid mask leaks out.
Optionally, the thinning the portion of the p-type gate layer not covered by the gate mask includes:
and etching the part of the p-type gate layer which is not covered by the gate mask so that the thickness of the part of the p-type gate layer which is not covered by the gate mask is smaller than that of the part of the p-type gate layer which is covered by the gate mask.
Optionally, the forming a gate in the first region includes:
manufacturing a grid electrode contact window in the grid electrode position area in the first area through photoetching and etching, and activating the p-type grid electrode layer leaked from the grid electrode contact window;
and manufacturing a grid electrode in the grid electrode contact window, and making the grid electrode contact with the p-type grid electrode layer leaked from the contact window.
Optionally, the forming the source and the drain in the second region includes:
manufacturing an ohmic contact window at the source electrode position and the drain electrode position in the second region by etching; the ohmic contact window leaks out of a portion of the barrier layer;
evaporating ohmic contact metal at the source electrode position and the drain electrode position;
etching away metal materials except the ohmic contact metal on the source electrode position and the drain electrode position to form the source electrode and the drain electrode;
and annealing the source electrode and the drain electrode through an annealing process to form metal semiconductor ohmic contact.
Optionally, the forming the source and the drain in the second region includes:
manufacturing an ohmic contact window at the source electrode position and the drain electrode position in the second region by etching; the ohmic contact window leaks out of a portion of the barrier layer;
forming a photoresist layer on the medium isolation layer;
removing the photoresist at the source electrode position and the drain electrode position;
evaporating ohmic contact metal at the source electrode position and the drain electrode position;
removing the photoresist layer;
and annealing the source electrode and the drain electrode through an annealing process to form metal semiconductor ohmic contact.
The embodiment of the invention provides a gallium nitride-based field effect transistor and a preparation method thereof, wherein the gallium nitride-based field effect transistor comprises the following steps: the device comprises a laminated substrate, a buffer layer, a back barrier layer, a channel layer, a barrier layer, a p-type gate layer and a passivation layer; the p-type gate layer is in contact with the p-type gate layer, and the source electrode and the drain electrode penetrate through the p-type gate layer and the passivation layer and are in contact with the barrier layer, wherein the gate electrode is located in a first region, the source electrode and the drain electrode are located in a second region, and p-type dopants in the p-type gate layer in a film layer of the second region are not activated. The method has the advantages of good process repeatability, high controllability, no depletion of partial two-dimensional electron gas in the channel, no damage to the barrier layer and capability of avoiding the electric leakage phenomenon between the grid and the drain.
Drawings
FIG. 1 is a schematic diagram of a GaN-based field effect transistor provided in the prior art
Fig. 2 is a schematic structural diagram of a gallium nitride-based field effect transistor according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of another gallium nitride-based field effect transistor according to an embodiment of the present invention;
fig. 4A is a flowchart of a method for manufacturing a gallium nitride-based field effect transistor according to a second embodiment of the present invention;
fig. 4B-4J are cross-sectional views of structures of steps in a method for manufacturing a gallium nitride-based field effect transistor according to a second embodiment of the present invention;
fig. 5 is a flowchart of a method for forming a source and a drain in a second region according to a second embodiment of the invention;
fig. 6 is a flowchart of another method for forming a source and a drain in a second region according to a second embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
An embodiment of the present invention provides a gallium nitride-based field effect transistor, and referring to fig. 1, fig. 1 is a schematic structural diagram of a gallium nitride-based field effect transistor provided in an embodiment of the present invention, including:
a
a
Specifically, the epitaxial wafer in the gallium nitride-based field effect transistor comprises a
a
Compared with the problem that the p-type material at the top of the channel needs to be removed in the traditional process, the gallium nitride-based field effect transistor provided by the embodiment of the invention is changed into the proper p-type material (namely, the p-type gate layer of the second region is reserved), and even if the p-type gate layer is arranged in the second region, the p-type dopant in the p-type gate layer in the region is not activated, so that the gallium nitride-based field effect transistor can present a high-resistance state. In the prior art, a p-gate layer is activated first, and during etching of a p-gate, a very high etching selection ratio of a p-type gate layer to a barrier layer needs to be adjusted, so that after the p-type gate layer is completely removed, etching can be stopped on the surface of the barrier layer. The over-etching of the barrier layer can damage the barrier layer, so that the two-dimensional electron gas concentration of the channel layer can be influenced, and the characteristics of the device are reduced; if the etching is stopped before the barrier layer is not reached, the residual p-type gate layer material on the top of the barrier layer can be caused, so that the two-dimensional electron gas in the channel layer is exhausted, and the current output capacity of the device is reduced. The residue of p-type gate layer material can also lead to leakage between the gate and drain. In the embodiment of the invention, the p-type dopant in the p-type gate layer arranged in the second region is not activated and can be in a high-resistance state, so that the source electrode, the drain electrode and the gate electrode are in a blocking state, the characteristics of the device are not influenced, the barrier layer is not damaged in the process of etching the p-type gate layer to form the gate electrode, the process fault tolerance is lower, the precision of the etching process is not limited, the controllability is high, the repeatability is good, and the method is suitable for mass production.
Optionally, the film thickness of the p-
Specifically, in the
Optionally, the thickness of the p-
Specifically, the thickness of the p-
Optionally, the material of the p-
Specifically, p-GaN and p-AlGaN form polarization charges on the surface of the material or a heterointerface, so that high-concentration two-dimensional electron gas is generated, and the channel-to-point characteristic is excellent.
Optionally, referring to fig. 2, fig. 2 is a schematic structural diagram of another gallium nitride-based field effect transistor according to an embodiment of the present invention, and further includes a
The embodiment of the invention provides a gallium nitride-based field effect transistor, which comprises: the device comprises a laminated substrate, a buffer layer, a back barrier layer, a channel layer, a barrier layer, a p-type gate layer and a passivation layer; and a source electrode and a drain electrode which penetrate through the p-type gate layer and the passivation layer and are in contact with the barrier layer, wherein the gate electrode is positioned in the first region, the source electrode and the drain electrode are positioned in the second region, and the p-type dopant of the p-type gate layer in the film layer of the second region is not activated. The selective area activation mode is adopted, so that only the p-type dopant at the position of the grid electrode is activated, the phenomenon that other residual p-type materials are activated to influence the characteristics of the device is avoided, the process repeatability is good, the controllability is high, the barrier layer is not damaged, the process window is wide, and the selective area activation method is very suitable for the mass production of the device.
Referring to fig. 4A, fig. 4A is a flowchart of a method for manufacturing a gallium nitride-based field effect transistor according to a second embodiment of the present invention, and fig. 4B to 4J are combined, where fig. 4B to 4J are structural cross-sectional views of steps in the method for manufacturing a gallium nitride-based field effect transistor according to the second embodiment of the present invention, and the method includes:
s10, providing an epitaxial wafer, wherein the epitaxial wafer comprises a laminated substrate, a buffer layer, a back barrier layer, a channel layer, a barrier layer and a p-type gate layer; wherein the dopant in the p-type gate layer is not activated.
Specifically, referring to fig. 4B, a
And S20, forming a gate mask on the surface of the p-type gate layer.
Specifically, the gate mask formed on the surface of the p-type gate layer may be silicon oxide, silicon nitride or metal nickel, and the growth of the gate mask may be achieved by plasma enhanced vapor chemical deposition, electron beam evaporation or magnetron sputtering.
Optionally, forming a gate mask on the surface of the p-type gate layer includes:
depositing a grid mask dielectric layer on the surface of the p-type grid layer;
manufacturing a photoresist mask on the surface of the grid mask dielectric layer;
and etching the grid mask dielectric layer to form a grid mask at the grid position, and leaking the p-type grid layer which is not covered by the grid mask.
Exemplarily, referring to fig. 4C, a gate
And S30, thinning the part of the p-type gate layer which is not covered by the gate mask.
Specifically, referring to fig. 4E, portions of the p-
Optionally, thinning the portion of the p-
the portion of the p-
Specifically, after the
And S40, removing the gate mask.
Specifically, referring to fig. 4F, after the etching is completed, the gate position is formed, and the
And S50, forming a medium isolation layer on the p-type gate layer.
Specifically, referring to fig. 4G, after the
And S60, etching the medium isolation layer to expose part of the p-type gate layer, wherein the exposed region of the p-type gate layer is a gate position region.
Specifically, referring to fig. 4H, after the growth of the
S70, selectively activating the dopant in the p-type gate layer in the gate location region.
Specifically, after a part of the p-
And S80, forming a passivation layer on the p-type gate layer.
Specifically, referring to fig. 4I, after the selective activation of the p-type dopant at the gate location is completed, the
S90, forming a grid electrode, a source electrode and a drain electrode; wherein a gate electrode is formed in the first region, and a source electrode and a drain electrode are formed in the second region, a p-type dopant of the p-type gate layer is activated in the first region, and a p-type dopant of the p-type gate layer is inactivated in the second region.
Specifically, referring to fig. 4J, the
Optionally, the forming a gate in the first region includes:
s91, manufacturing a gate contact window in the gate position area in the first area through photoetching and etching, and activating the p-type gate layer leaked from the gate window;
and S92, manufacturing a grid, wherein the grid is in contact with the leaked p-type grid layer through the grid contact window.
Illustratively, the
Forming the source and drain in the second region includes various methods:
optionally, referring to fig. 5, fig. 5 is a flowchart of a method for forming a source and a drain in a second region according to a second embodiment of the present invention, where forming a source and a drain in a second region includes:
s93, manufacturing an ohmic contact window at the source electrode position and the drain electrode position in the second area through etching; the ohmic contact window leaks out of the barrier layer;
s94, evaporating ohmic contact metal at the source electrode position and the drain electrode position;
s95, etching away metal materials except the ohmic contact metal on the source electrode position and the drain electrode position to form a source electrode and a drain electrode;
and S96, annealing the source electrode and the drain electrode through an annealing process to form metal semiconductor ohmic contact.
Specifically, after the ohmic contact window is formed, the portion of the ohmic contact window that leaks out of the
Optionally, referring to fig. 6, fig. 6 is a flowchart of another method for forming a source and a drain in a second region according to the second embodiment of the present invention, where forming a source and a drain in a second region includes:
s97, manufacturing an ohmic contact window at the source electrode position and the drain electrode position in the second area through etching; ohmic contact windows leak out of portions of the barrier layer;
s98, forming a photoresist layer on the medium isolation layer;
s99, removing the photoresist at the source electrode position and the drain electrode position;
s100, evaporating ohmic contact metal at the source electrode position and the drain electrode position;
s101, removing the photoresist layer;
and S102, annealing the source electrode and the drain electrode through an annealing process to form metal semiconductor ohmic contact.
Specifically, after the ohmic contact window is formed, the portion of the ohmic contact window that leaks out of the
The embodiment of the invention provides a preparation method of a gallium nitride-based field effect transistor, which comprises the following steps: providing an epitaxial wafer, wherein the epitaxial wafer comprises a laminated substrate, a buffer layer, a back barrier layer, a channel layer, a barrier layer and a p-type gate layer; wherein the dopant in the p-type gate layer is not activated; forming a grid mask on the surface of the p-type grid layer; thinning the part of the p-type gate layer which is not covered by the gate mask; removing the gate mask; forming a dielectric isolation layer on the p-type gate layer; etching the dielectric isolation layer to expose part of the p-type gate layer, wherein the exposed region of the p-type gate layer is a gate position region; selectively activating a dopant in a p-type gate layer of the gate location region; forming a passivation layer on the p-type gate layer; forming a grid electrode, a source electrode and a drain electrode; wherein a gate is formed in the first region, a p-type dopant in a film layer of the p-type gate layer is activated, a source and a drain are formed in the second region, and the p-type dopant in the film layer of the p-type gate layer is not activated. The method can improve the gate etching process, overcomes the problem that the p-type material at the top of the channel needs to be completely removed in the traditional process, can properly reserve the p-type material, can reduce the fault tolerance rate of etching because the p-type dopant is not activated and is in a high resistance state, and is suitable for mass production.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
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