阅读说明：本技术 一类卟啉材料在有机存储中的应用 (Application of porphyrin material in organic storage ) 是由 不公告发明人 于 2019-11-02 设计创作，主要内容包括：本专利主要是将一类卟啉材料应用在有机存储器件中。通过自组装与表面化学反应,在介电层与有机半导体层之间的界面处植入卟啉单分子层,其分子平面垂直于衬底；介于卟啉分子丰富的电子结构与其构建的以苯环为顶端单元的特殊表面,器件表现出存储性能,展示出该类卟啉材料在有机存储器领域潜在的应用前景。(The patent mainly applies a class of porphyrin materials to organic memory devices. Implanting a porphyrin monomolecular layer at the interface between the dielectric layer and the organic semiconductor layer through self-assembly and surface chemical reaction, wherein the molecular plane of the porphyrin monomolecular layer is vertical to the substrate; the device shows storage performance between the rich electronic structure of porphyrin molecules and the special surface which is constructed by the porphyrin molecules and takes a benzene ring as a top unit, and shows the potential application prospect of the porphyrin material in the field of organic memories.)

1. An organic memory, characterized in that a porphyrin monolayer is inserted between a dielectric layer and an organic semiconductor layer, the macrocyclic plane of the porphyrin monolayer being perpendicular to the plane of the dielectric layer; the sulfhydryl of the porphyrin molecule is connected to the porphyrin ring through alkyl chains with different lengths, and the structural formula of the porphyrin molecule is as follows:

in the structure, n is a 3 ~ 8 alkyl straight chain.

2. A method of fabricating an organic memory device, the method comprising: forming a porphyrin monolayer on the dielectric layer; forming an organic semiconductor layer on the porphyrin monolayer; the macrocyclic plane of the porphyrin monolayer is perpendicular to the plane of the dielectric layer.

3. The method of claim 2, wherein the forming of the porphyrin monolayer is by self-assembly and surface chemical reaction at the surface of the dielectric layer.

4. The method as claimed in claim 2, wherein the length and width of the channel of the organic memory are 50-200 μm and 1000-3000 μm, respectively.

Technical Field

The invention relates to application of a porphyrin material in an organic memory.

Background

The memory device can realize information storage, data processing and transmission, intelligent switching and the like, and plays a very important role in modern science and technology. The organic field effect transistor memory is formed by taking an organic material as an active material and forming a sandwich layer structure with other functional materials. Information is stored by applying a forward or reverse voltage to the gate electrode to cause a reversible shift in threshold voltage. Important parameters of the memory device are a memory window, a retention time, the number of read-write-erase cycles, an operating voltage, a mobility, a switching current ratio, a threshold voltage, and the like.

The memory may be classified into a volatile memory and a nonvolatile memory, and the memory based on the organic thin film field effect transistor belongs to one of the nonvolatile memories. The organic film field effect transistor memory has the advantages of low price, simple manufacture, flexible preparation and the like. A typical organic thin film field effect transistor includes: organic semiconductor layer, dielectric layer, three electrodes (source electrode, drain electrode, grid electrode). The storage material plays a role in capturing charges or changing polarity in a device and is an important component of an organic thin film field effect transistor memory; the ability of the memory material to capture/release electrons directly affects device memory time, memory window, read/write erase cycle times, etc.

Disclosure of Invention

1. The invention is characterized in that a porphyrin material with abundant electronic characteristics is designed, and a sulfhydryl (-SH) is connected to a porphyrin ring through alkyl chains with different lengths; forming a porphyrin monomolecular layer interface by performing surface chemical reaction with the maleic acid imide of the lower layer, wherein the annular plane of the porphyrin monomolecular layer interface is vertical to the plane of the dielectric layer; the molecular structure of the porphyrin material is as follows:

n in the structure is a 3 ~ 8 alkyl straight chain;

molecular structure of maleic acid imine:

2. n is 3, PAS material with the structural formula

3. The invention provides a method for forming a monomolecular layer on the surface of a dielectric layer by the porphyrin-like material through self-assembly and surface chemical reaction.

4. The invention applies the porphyrin material monomolecular layer to an organic memory.

Drawings

The above and other features and advantages of the present invention will be more clearly understood from the following drawings and detailed description, in which:

FIG. 1 nuclear magnetic hydrogen spectrum of compound I;

FIG. 2 nuclear magnetic hydrogen spectrum of compound II;

FIG. 3 PAS mass spectrum;

FIG. 4 porphyrin material in SiO₂Schematic representation of the formation of a monolayer on a surface by self-assembly with a surface chemical reaction;

FIG. 5 is a schematic diagram of an organic field effect transistor memory structure; the length and width of the channel are 100 μm and 2000 μm respectively;

FIG. 6 device Si/SiO₂Charge storage layer/pentacene/Cu storage window.

Detailed Description

The following detailed description of the preferred embodiments of the invention is provided to enable those skilled in the art to more readily understand the advantages and features of the invention. The chemical synthesis of porphyrin PAS is described in detail below.