阅读说明：本技术 一种厚膜电阻的制作方法 (Method for manufacturing thick film resistor ) 是由 黄正信 刘复强 林育民 顾明德 于 2019-07-19 设计创作，主要内容包括：本发明公开了一种厚膜电阻的制作方法,包括在半成品电阻中陶瓷基板的背面贴覆膜片；对所述半成品电阻进行切割,形成若干个顺次贯穿所述正面电极层、陶瓷基板和背面电极层第一切割槽,且保证膜片完整；在各第一切割槽内分别制作侧面电极层；对各侧面电极层进行切割,形成第二切割槽,同时沿着与所述第二切割槽相垂直的方向切割,形成粒状半成品,且保证膜片完整；去掉膜片,取出独立的粒状半成品；在各粒状半成品的背面电极层、正面电极层和侧面电极层表面顺次形成镍层和锡层。使用本发明的制作方法制作厚膜电阻,可将产品的合格率提升30％左右,实现大大降低产品的生产成本,符合当今社会的节约、环保的主题。(The invention discloses a manufacturing method of a thick film resistor, which comprises the steps of pasting a diaphragm on the back surface of a ceramic substrate in a semi-finished resistor; cutting the semi-finished resistor to form a plurality of first cutting grooves which sequentially penetrate through the front electrode layer, the ceramic substrate and the back electrode layer and ensure the integrity of the diaphragm; respectively manufacturing side electrode layers in the first cutting grooves; cutting each side electrode layer to form a second cutting groove, and simultaneously cutting along the direction vertical to the second cutting groove to form a granular semi-finished product and ensure the integrity of the membrane; removing the membrane and taking out the independent granular semi-finished product; a nickel layer and a tin layer are sequentially formed on the surfaces of the back electrode layer, the front electrode layer and the side electrode layer of each granular semi-finished product. The thick film resistor manufactured by the manufacturing method can improve the qualification rate of products by about 30 percent, greatly reduce the production cost of the products and meet the theme of saving and environmental protection in the current society.)

1. The manufacturing method of the thick film resistor is characterized by comprising the following steps of:

pasting a membrane on the back of the ceramic substrate in the semi-finished resistor; the semi-finished resistor comprises a ceramic substrate, wherein the back surface and the front surface of the ceramic substrate are respectively provided with a plurality of back electrode layers and front electrode layers which are arranged oppositely; a resistor layer is arranged between the adjacent front electrode layers, and a glass protective layer and a resin protective layer are sequentially arranged on the resistor layer; resistance adjusting lines are arranged at corresponding positions on the resistance layer and the glass protective layer;

cutting the semi-finished resistor to form a plurality of first cutting grooves which sequentially penetrate through the front electrode layer, the ceramic substrate and the back electrode layer and ensure the integrity of the diaphragm;

respectively manufacturing side electrode layers in the first cutting grooves;

cutting each side electrode layer to form a second cutting groove, and simultaneously cutting along the direction vertical to the second cutting groove to form a granular semi-finished product and ensure the integrity of the membrane;

removing the membrane and taking out the independent granular semi-finished product;

a nickel layer and a tin layer are sequentially formed on the surfaces of the back electrode layer, the front electrode layer and the side electrode layer of each granular semi-finished product.

2. The method of claim 1, wherein the thick film resistor comprises: the semi-finished resistor is manufactured by the following steps:

forming a plurality of back electrode layers and front electrode layers which are oppositely arranged on the back and the front of the ceramic substrate respectively;

forming a resistor layer between adjacent front electrode layers;

forming a glass protective layer on the resistor layer;

cutting and resistance-adjusting the resistor layer and the glass protective layer to form a resistance-adjusting line;

and forming a resin protective layer on the glass protective layer.

3. The method of claim 2, wherein the thick film resistor comprises: the back and the front of the ceramic substrate are respectively provided with a plurality of back electrode layers and front electrode layers which are arranged oppositely, and the method specifically comprises the following steps:

printing electrode materials on the symmetrical two sides of the back and the front of the ceramic substrate in a silk screen thick film printing mode, and sintering at 850 +/-5 ℃ to form a back electrode layer and a front electrode layer;

forming a resistor layer between the adjacent front electrode layers, specifically: printing a resistor material between the adjacent front electrode layers in a screen thick film printing mode, and sintering at 850 +/-5 ℃ to form a resistor layer;

forming a glass protection layer on the resistor layer, specifically: printing the glass slurry on the resistor layer by a screen thick film printing mode, and sintering at the sintering temperature of 600 +/-5 ℃ to form the glass protective layer.

4. The method of claim 1 or 2, wherein: the resin protective layer is formed by:

printing a layer of resin slurry on the upper surface of the glass protective layer by a screen printing machine, and sintering at the sintering temperature of: 200 + -10 deg.C, thereby forming a resin protective layer.

5. The method of claim 1 or 2, wherein: the resin protective layer is formed by:

spraying a layer of resin slurry on the upper surface of the glass protective layer by an ink jet printer, and sintering at the sintering temperature of: 200 + -10 deg.C, thereby forming a resin protective layer.

6. The method of claim 1, wherein the thick film resistor comprises: the diaphragm is a blue film.

7. The method of claim 1, wherein the thick film resistor comprises: the side electrode layer is formed by:

and printing a layer of resin silver paste in the first cutting groove in an overflow mode through a screen printer in an overflow mode, and connecting and conducting the corresponding back electrode and the front electrode layer so as to form the side electrode layer.

8. The method of claim 1, wherein the thick film resistor comprises: the side electrode layer is formed by:

and spraying a layer of resin silver paste in the first cutting groove by an ink jet machine in an ink jet mode, and connecting and conducting the corresponding back electrode layer and the front electrode layer so as to form the side electrode layer.

9. The method of claim 1, wherein the thick film resistor comprises: the side electrode layer is formed by:

and a vacuum sputtering mode is adopted, a nickel-chromium alloy layer is sputtered in the first cutting groove in a vacuum mode through a vacuum plating machine, and the corresponding back electrode layer and the front electrode layer are connected and conducted, so that the side electrode layer is formed.

10. The method of claim 1, wherein the thick film resistor comprises: the first cutting groove and the second cutting groove are formed in a laser mode.

Technical Field

The invention belongs to the technical field of resistor manufacturing, and particularly relates to a manufacturing method of a thick film resistor.

Background

In recent years, with the continuous demands of consumers on subminiature, high-performance, multifunctional, portable and wearable electronic products, various electronic products tend to develop rapidly in the directions of light, thin, short and small, so that the miniature thick film chip resistor is popularized and applied. The product percent of pass of the production process in the industry at present is low, so a more exquisite resistor manufacturing process is needed to meet the design and production of the miniature thick film chip resistor, and the production cost of the product is greatly reduced.

Disclosure of Invention

Aiming at the problems, the invention provides the manufacturing method of the thick film resistor, and the thick film resistor manufactured by the manufacturing method can improve the qualification rate of products by about 30 percent, greatly reduce the production cost of the products and meet the theme of saving and environmental protection in the current society.

In order to achieve the technical purpose and achieve the technical effects, the invention is realized by the following technical scheme:

a manufacturing method of a thick film resistor comprises the following steps:

pasting a membrane on the back of the ceramic substrate in the semi-finished resistor; the semi-finished resistor comprises a ceramic substrate, wherein the back surface and the front surface of the ceramic substrate are respectively provided with a plurality of back electrode layers and front electrode layers which are arranged oppositely; a resistor layer is arranged between the adjacent front electrode layers, and a glass protective layer and a resin protective layer are sequentially arranged on the resistor layer; resistance adjusting lines are arranged at corresponding positions on the resistance layer and the glass protective layer;

cutting the semi-finished resistor to form a plurality of first cutting grooves which sequentially penetrate through the front electrode layer, the ceramic substrate and the back electrode layer and ensure the integrity of the diaphragm;

respectively manufacturing side electrode layers in the first cutting grooves;

cutting each side electrode layer to form a second cutting groove, and simultaneously cutting along the direction vertical to the second cutting groove to form a granular semi-finished product and ensure the integrity of the membrane;

removing the membrane and taking out the independent granular semi-finished product;

a nickel layer and a tin layer are sequentially formed on the surfaces of the back electrode layer, the front electrode layer and the side electrode layer of each granular semi-finished product.

As a further development of the invention, the semi-finished resistor is produced by the following steps:

forming a plurality of back electrode layers and front electrode layers which are oppositely arranged on the back and the front of the ceramic substrate respectively;

forming a resistor layer between adjacent front electrode layers;

forming a glass protective layer on the resistor layer;

cutting and resistance-adjusting the resistor layer and the glass protective layer to form a resistance-adjusting line;

and forming a resin protective layer on the glass protective layer.

As a further improvement of the present invention, the forming a plurality of back electrode layers and front electrode layers oppositely disposed on the back surface and the front surface of the ceramic substrate respectively specifically includes:

printing electrode materials on the symmetrical two sides of the back and the front of the ceramic substrate in a silk screen thick film printing mode, and sintering at 850 +/-5 ℃ to form a back electrode layer and a front electrode layer;

forming a resistor layer between the adjacent front electrode layers, specifically: printing a resistor material between the adjacent front electrode layers in a screen thick film printing mode, and sintering at 850 +/-5 ℃ to form a resistor layer;

forming a glass protection layer on the resistor layer, specifically: printing the glass slurry on the resistor layer by a screen thick film printing mode, and sintering at the sintering temperature of 600 +/-5 ℃ to form the glass protective layer.

As a further improvement of the present invention, the resin protective layer is formed by:

printing a layer of resin slurry on the upper surface of the glass protective layer by a screen printing machine, and sintering at the sintering temperature of: 200 + -10 deg.C, thereby forming a resin protective layer.

As a further improvement of the present invention, the resin protective layer is formed by:

spraying a layer of resin slurry on the upper surface of the glass protective layer by an ink jet printer, and sintering at the sintering temperature of: 200 + -10 deg.C, thereby forming a resin protective layer.

As a further improvement of the present invention, the membrane is a blue membrane.

As a further improvement of the present invention, the side electrode layer is formed by:

and printing a layer of resin silver paste in the first cutting groove in an overflow mode through a screen printer in an overflow mode, and connecting and conducting the corresponding back electrode and the front electrode layer so as to form the side electrode layer.

As a further improvement of the present invention, the side electrode layer is formed by:

and spraying a layer of resin silver paste in the first cutting groove by an ink jet machine in an ink jet mode, and connecting and conducting the corresponding back electrode layer and the front electrode layer so as to form the side electrode layer.

As a further improvement of the present invention, the side electrode layer is formed by:

and a vacuum sputtering mode is adopted, a nickel-chromium alloy layer is sputtered in the first cutting groove in a vacuum mode through a vacuum plating machine, and the corresponding back electrode layer and the front electrode layer are connected and conducted, so that the side electrode layer is formed.

As a further improvement of the present invention, the first cutting groove and the second cutting groove are both formed by a laser method.

Compared with the prior art, the invention has the beneficial effects that:

the invention provides a manufacturing method of a thick film resistor, which ensures that the cut miniature thick film resistor is still integrated by pasting a membrane on the back of a ceramic substrate in the manufacturing process of a product, is convenient for processing an integrated side electrode layer, and adopts a special process method when manufacturing a resin protective layer and the side electrode layer, thereby achieving the purposes of saving labor, shortening working hours and simultaneously manufacturing a plurality of resistors and greatly reducing the whole manufacturing cost of the miniature thick film resistor. The qualification rate of the product can be improved by about 30 percent, the theme of saving and environmental protection in the current society is met, the application requirement of a client application on the miniature thick film chip resistor is met, and the method has a good application prospect.

Drawings

In order that the present disclosure may be more readily and clearly understood, reference is now made to the following detailed description of the present disclosure taken in conjunction with the accompanying drawings, in which:

FIG. 1 is a schematic cross-sectional view of a resistor of the present invention applied to a micro thick film chip;

FIG. 2 is a schematic view of the structure of the present invention after completion of step (1);

FIG. 3 is a schematic view of the structure of the present invention after completion of step (2);

FIG. 4 is a schematic structural view after completion of step (3) in the present invention;

FIG. 5 is a schematic structural view after completion of step (4) in the present invention;

FIG. 6 is a schematic view of the structure of the present invention after completion of step (5);

FIG. 7 is a schematic view of the structure of the present invention after completion of step (6) (method 1);

FIG. 8 is a schematic view of the structure of the present invention after completion of step (6) (method 2);

FIG. 9 is a schematic view of the structure of the present invention after completion of step (6) (method 3);

FIG. 10 is a schematic view of the structure of the semi-finished product after step (7) of the present invention is completed;

FIG. 11 is a schematic view showing the structure of a granulated semi-finished product after completion of step (8) in the present invention;

FIG. 12 is a schematic view of the structure of the nickel layer after step (9) is completed in the present invention;

FIG. 13 is a schematic diagram of a tin layer after step (10) is completed in the present invention.

The following description is made with reference to the accompanying drawings:

01-ceramic substrate 02-back electrode layer; 03-a front electrode layer; 04-a resist layer; 05-a glass protective layer; 06-resistance regulating wire; 07-a resin protective layer; 08-a membrane; 09-a first cutting groove; 10-a side electrode layer; 11-a second cutting groove; 12-broken grain line; 13-a nickel layer; 14-tin layer.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and do not limit the scope of the invention.

The following detailed description of the principles of the invention is provided in connection with the accompanying drawings.

The invention provides a manufacturing method of a thick film resistor, which comprises the following steps:

step (1), pasting a diaphragm 8 on the back surface of a ceramic substrate 1 in a semi-finished resistor, preferably, the diaphragm 8 is a blue film, and specifically, refer to fig. 5; the semi-finished resistor comprises a ceramic substrate 1, wherein the back surface and the front surface of the ceramic substrate 1 are respectively provided with a plurality of back electrode layers 2 and front electrode layers 3 which are oppositely arranged; a resistor layer 4 is arranged between the adjacent front electrode layers 3, and a glass protective layer 5 and a resin protective layer 7 are sequentially arranged on the resistor layer 4; resistance adjusting lines 6 are arranged at corresponding positions on the resistance layer 4 and the glass protective layer 5;

in a specific embodiment of the present invention, the semi-finished resistor is manufactured by the following steps:

forming a plurality of back electrode layers 2 and front electrode layers 3 which are oppositely arranged on the back and the front of the ceramic substrate 1 respectively; in a specific implementation manner of the embodiment of the present invention, a plurality of back electrode layers 2 and front electrode layers 3 are formed on the back surface and the front surface of the ceramic substrate 1, respectively, and specifically: printing electrode materials on the symmetrical two sides of the back surface and the front surface of the ceramic substrate 1 in a silk screen thick film printing mode, and then sintering at 850 +/-5 ℃ to form a back electrode layer 2 and a front electrode layer 3, specifically referring to fig. 2;

forming a resist layer 4 between adjacent front electrode layers 3; in a specific implementation manner of the embodiment of the present invention, the following is specifically performed: printing a resistor material between the adjacent front electrode layers 3 in a screen thick film printing mode, and sintering at 850 +/-5 ℃ to form a resistor layer 4;

forming a glass protective layer 5 on the resist layer 4; in a specific implementation manner of the embodiment of the present invention, the following is specifically performed: printing the glass slurry on the resistor layer 4 by a screen thick film printing mode, and sintering at the sintering temperature of 600 +/-5 ℃ to form the glass protective layer 5.

Cutting and resistance-adjusting the resistance layer 4 and the glass protective layer 5 to form a resistance-adjusting line 6; in a specific implementation manner of the embodiment of the present invention, the following is specifically performed: putting the semi-finished product subjected to the steps into a laser resistance trimming machine to perform precision correction on the resistance layer 4 so as to meet the requirements of product specification and precision, and particularly referring to fig. 3;

forming a resin protective layer 7 on the glass protective layer 5, see in particular fig. 4; in a specific embodiment of the present invention, the resin protective layer 7 is formed by:

printing a layer of resin slurry on the upper surface of the glass protective layer 5 by a screen printer, and sintering at the sintering temperature: 200 + -10 deg.C, thereby forming the resin protective layer 7.

In another specific embodiment of the present invention, the resin protective layer 7 is formed by:

spraying a layer of resin slurry on the upper surface of the glass protective layer 5 by an ink jet printer, and sintering at the sintering temperature of: 200 + -10 deg.C, thereby forming the resin protective layer 7.

Cutting the semi-finished resistors to form a plurality of first cutting grooves 9 which sequentially penetrate through the front electrode layer 3, the ceramic substrate 1 and the back electrode layer 2 and ensure the integrity of a diaphragm 8, and particularly referring to fig. 6; during specific implementation, the semi-finished product after the steps is fixed on a platform of a cutting machine, the front side of the ceramic substrate 1 is cut in a laser mode, only the ceramic substrate 1 is cut in a strip shape, the back side membrane 8 is kept complete, and a first cutting groove 9 is formed so as to facilitate the subsequent manufacture of a side electrode;

step (3) manufacturing side electrode layers 10 in the first cutting grooves 9 respectively;

in the first specific embodiment of the present invention, the side electrode layer 10 is formed by:

printing a layer of resin silver paste in an overflow manner in the first cutting groove 9 by using a screen printer, and connecting and conducting the corresponding back electrode and the front electrode layer 3 to form a side electrode layer 10, specifically referring to fig. 7;

in a second specific embodiment of the present invention, the side electrode layer 10 is formed by:

spraying a layer of resin silver paste in the first cutting groove 9 by an ink jet printer in an ink jet mode, and connecting and conducting the corresponding back electrode layer 2 and the front electrode layer 3 to form a side electrode layer 10, specifically referring to fig. 8;

in a third specific embodiment of the present invention, the side electrode layer 10 is formed by:

a vacuum sputtering mode is adopted, a nichrome layer is sputtered in vacuum in the first cutting groove 9 through a vacuum plating machine, and the corresponding back electrode layer 2 and the front electrode layer 3 are connected and conducted, so that a side electrode layer 10 is formed, and the specific reference is shown in fig. 9;

step (4) cutting each side electrode layer 10 to form a second cutting groove 11, and simultaneously cutting along a direction perpendicular to the second cutting groove 11 to form a grain folding line 12, so as to finally form a granular semi-finished product and ensure the integrity of the diaphragm 8, which is specifically shown in fig. 10 and 11;

step (5) removing the membrane 8 and taking out the independent granular semi-finished product; in specific implementation, a stripper can be used for removing the membrane 8;

and (6) sequentially forming a nickel layer 13 and a tin layer 14 on the surfaces of the back electrode layer 2, the front electrode layer 3 and the side electrode layer 10 of each granular semi-finished product, and in the specific implementation process, sequentially performing nickel electroplating and tin electroplating treatment on the surfaces of the back electrode layer 2, the front electrode layer 3 and the side electrode layer 10 of each granular semi-finished product by using an electroplating machine to form the nickel layer 13 and the tin layer 14, specifically referring to fig. 1, 12 and 13.

The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.