阅读说明：本技术 一种湿敏晶体管传感器及其检测方法 (Humidity-sensitive transistor sensor and detection method thereof ) 是由 王中健 肖兵 梁欢 黄肖艳 于 2018-06-21 设计创作，主要内容包括：本发明公开了一种湿敏晶体管传感器及其检测方法,其中,晶体管传感器包括高掺硅层和二氧化硅层,所述二氧化硅层设于所述高掺硅层的上部,所述二氧化硅层的上端设有二硫化钼层,所述二氧化硅层上设有源极和漏极,所述源极与漏极分别位于所述二硫化钼层的两相对侧,所述高掺硅层上设有栅极。本发明的晶体管传感器在尺寸上得到了高度的压缩,利用MoS2独特的电子性质,起到很好的气体吸附的性能,对环境中的水气具有灵敏度高、稳定性好、与传统的微纳加工工艺兼容等优点。(The invention discloses a humidity-sensitive transistor sensor and a detection method thereof, wherein the transistor sensor comprises a highly doped silicon layer and a silicon dioxide layer, the silicon dioxide layer is arranged on the upper part of the highly doped silicon layer, a molybdenum disulfide layer is arranged at the upper end of the silicon dioxide layer, a source electrode and a drain electrode are arranged on the silicon dioxide layer, the source electrode and the drain electrode are respectively positioned on two opposite sides of the molybdenum disulfide layer, and a grid electrode is arranged on the highly doped silicon layer. The transistor sensor is highly compressed in size, has good gas adsorption performance by utilizing the unique electronic property of MoS2, and has the advantages of high sensitivity and stability to moisture in the environment, compatibility with the traditional micro-nano processing technology and the like.)

1. A humidity sensitive transistor sensor, comprising: the silicon dioxide layer is arranged on the upper portion of the highly doped silicon layer, a molybdenum disulfide layer is arranged at the upper end of the silicon dioxide layer, a source electrode and a drain electrode are arranged on the silicon dioxide layer and are respectively located on two opposite sides of the molybdenum disulfide layer, and a grid electrode is arranged on the highly doped silicon layer.

2. A moisture sensitive transistor sensor according to claim 1, wherein: the thickness of the silicon dioxide layer is 300 nm.

3. A moisture sensitive transistor sensor according to claim 1, wherein: the thickness of the molybdenum disulfide layer is 0.6 nm.

4. A method of testing a sensor comprising a humidity sensitive transistor sensor according to any of claims 1 to 3, characterized by the steps of:

s1: placing the transistor sensor on a probe platform, and respectively contacting the corresponding source electrode, drain electrode and grid electrode with probes;

s2: the silicon disulfide layer is subjected to basic test under different external environments, and then the transistor sensor under different humidity is subjected to test including output curve and electrical curve through a probe table;

s3: and forming a one-to-one corresponding relation between the specific humidity and the specific electrical signal by acquiring the electrical signal under various humidity environments in the test.

5. The method of claim 4, wherein the step of detecting the humidity sensor comprises: in the step S2, water drops are dropped in vacuum, a hygrometer in a vacuum environment is used to observe the humidity change, then the transistor under different humidities is tested by a vacuum probe station, and the hysteresis characteristic of an electrical curve is observed.

Technical Field

The invention relates to the field of microelectronics, in particular to a humidity-sensitive transistor sensor and a detection method thereof.

Background

The core element of the humidity sensor is a film made of a humidity sensing material, when water vapor in air is adsorbed on the humidity sensing film, the electrical signals of the element are changed, and the humidity can be measured by utilizing the characteristic. The main principle of the humidity sensor is that the humidity sensor reflects the amount of change of corresponding gas through the change of the conductance of the humidity sensitive material under different humidity in the environment. Based on the high-speed development of the micro-nano processing technology, the sizes of various devices are continuously integrated and miniaturized, and the traditional sensor is less and less improved in the aspects of continuous miniaturization, sensitivity, stability, corresponding speed and the like of products due to the limitation of materials of the traditional sensor, so that the sensor cannot meet the requirements of technological progress. Therefore, improvements in the prior art are needed.

Disclosure of Invention

In order to overcome the defects in the prior art, the humidity-sensitive transistor sensor and the detection method thereof are provided, and the performances of sensitivity, stability, response range and the like are greatly improved.

The invention provides a humidity-sensitive transistor sensor which comprises a highly-doped silicon layer and a silicon dioxide layer (SiO2), wherein the silicon dioxide layer is arranged on the upper part of the highly-doped silicon layer, a molybdenum disulfide layer (MoS2) is arranged at the upper end of the silicon dioxide layer, a source electrode and a drain electrode are arranged on the silicon dioxide layer, the source electrode and the drain electrode are respectively positioned on two opposite sides of the molybdenum disulfide layer, and a grid electrode is arranged on the highly-doped silicon layer.

Compared with the prior art, the transistor sensor is highly compressed in size, has good gas adsorption performance by utilizing the unique electronic property of MoS2, and has the advantages of high sensitivity and stability to moisture in the environment, compatibility with the traditional micro-nano processing technology and the like.

A further improvement is that the thickness of the silicon dioxide layer is 300 nm. A high degree of compression on the size of the transistor sensor.

A further improvement is that the thickness of the molybdenum disulfide layer is 0.6 nm. As well as a substantial reduction in size over conventional sensors.

The invention also provides a detection method of the humidity-sensitive transistor sensor, which comprises the following steps:

s1: placing the transistor sensor on a probe platform, and respectively contacting the corresponding source electrode, drain electrode and grid electrode with probes;

s2: the silicon disulfide layer is subjected to basic test under different external environments, and then the transistor sensor under different humidity is subjected to test including output curve and electrical curve through a probe table;

s3: and forming a one-to-one corresponding relation between the specific humidity and the specific electrical signal by acquiring the electrical signal under various humidity environments in the test.

In a further improvement, in step S2, drop by drop in vacuum, observe humidity change by a hygrometer in vacuum environment, test the transistor at different humidity by a vacuum probe station, and observe hysteresis characteristics of the electrical curve.

After the transistor sensor is placed on the probe station, an output curve graph and an electrical curve graph of the transistor sensor are obtained through the characteristics of the MoS2, and therefore the corresponding gas variation is reflected.

Drawings

Fig. 1 is a schematic structural diagram of a humidity sensor according to a first embodiment of the present invention.

The reference numerals in the specification are specifically as follows;

a highly doped silicon layer 1; a silicon dioxide layer 2; a molybdenum disulfide layer 3; a source electrode 4; a drain electrode 5; and a gate electrode 6.

Detailed Description

In order to make the technical means, the inventive features, the objectives and the effects of the invention easy to understand, the invention will be further described with reference to the accompanying drawings.

The first embodiment of the invention discloses a humidity-sensitive transistor sensor, as shown in fig. 1, which comprises a highly doped silicon layer 1 and a silicon dioxide layer 2(SiO2), wherein the silicon dioxide layer 2 is arranged on the highly doped silicon layer 1, the thickness of the silicon dioxide layer 2 is preferably 300nm, the thickness of the molybdenum disulfide layer 3 is preferably 0.6nm, the molybdenum disulfide layer 3(MoS2) is arranged at the upper end of the silicon dioxide layer 2, a source electrode 4 and a drain electrode 5 are arranged on the silicon dioxide layer 2, the source electrode 4 and the drain electrode 5 are respectively arranged on two opposite sides of the molybdenum disulfide layer 3, and a gate electrode 6 is arranged on the highly doped silicon layer 1.

The second embodiment of the invention discloses a detection method of a humidity-sensitive transistor sensor, which comprises the following steps:

s1: placing the transistor sensor on a probe platform, and respectively contacting the corresponding source electrode 4, drain electrode 5 and grid electrode 6 with probes;

s2: the silicon disulfide layer is subjected to basic test under different external environments, and then the transistor sensor under different humidity is subjected to test including output curve and electrical curve through a probe table;

s3: and forming a one-to-one corresponding relation between the specific humidity and the specific electrical signal by acquiring the electrical signal under various humidity environments in the test.

In specific use, the device is placed on a probe station, and the probe is respectively used for contacting a source electrode 4, a drain electrode 5 and a grid electrode 6 of the corresponding device; first, when the basic I-V test is performed in different external environments including vacuum and atmosphere, the I-V curve of the MoS2 material has hysteresis when the device is in air, and the hysteresis disappears in the vacuum environment due to the strong sensitivity of the MoS2 material to water in air. Secondly, for gas environments with different humidity, the conductivity of the MoS2 film changes monotonically with the increase in humidity. If water drops are dropped drop by drop in vacuum, a hygrometer in a vacuum environment is used for observing humidity change, then a vacuum probe table is used for testing the transistor under different humidity according to an output curve and an electrical curve, and it should be observed that the hysteresis characteristic of the electrical curve of the transistor is continuously increased along with the continuous increase of the humidity. Finally, through the collection of electrical signals under various humidity environments in the test, a one-to-one corresponding relation between specific humidity and specific electrical signals is formed, and therefore the effect of the humidity sensor is achieved.

Compared with the traditional sensor, the novel nano sensor is highly compressed in size on the basis of a micro-nano processing technology, and the performances such as sensitivity, stability, response range and the like of the novel nano sensor are greatly improved. The method has the advantages of high sensitivity to water vapor in the environment, good stability, compatibility with the traditional micro-nano processing technology and the like.

Specific embodiments of the invention have been described above. It is to be understood that the invention is not limited to the particular embodiments described above, in that devices and structures not described in detail are understood to be implemented in a manner common in the art; various changes or modifications may be made by one skilled in the art within the scope of the claims without departing from the spirit of the invention, and without affecting the spirit of the invention.