阅读说明：本技术 一种柔性面板用光刻胶清洗剂及其生产工艺 (Photoresist cleaning agent for flexible panel and production process thereof ) 是由 汤晓春 何珂 戈烨铭 于 2021-06-10 设计创作，主要内容包括：本发明公开了一种柔性面板用光刻胶清洗剂及其生产工艺,属于清洗剂技术领域。其本发明提供的柔性面板用光刻胶清洗剂包括以下重量百分比的组分：1.5-9.5％季铵氢氧化物、0.5-16.5％水、4.5-21.5％异丙二醇单苄基醚、0.5-5.5％缓蚀剂,余量为有机溶剂。且本发明利用了4-羟基丁酸、二乙烯三胺、苄氯、肉桂醛和γ-(2,3-环氧丙氧基)丙基三甲氧基硅烷逐步反应生成缓蚀剂,并在季铵氢氧化物光刻胶清洗剂中引入了该缓蚀剂,因该缓蚀剂中的硅氧烷链和曼妮希碱、苯环、咪唑啉的结构特性,使得其极易在铜箔或铝箔表面形成致密的保护膜,避免了季铵氢氧化物对铜箔或铝箔的腐蚀,且对光刻胶高效清洗。(The invention discloses a photoresist cleaning agent for a flexible panel and a production process thereof, and belongs to the technical field of cleaning agents. The photoresist cleaning agent for the flexible panel comprises the following components in percentage by weight: 1.5-9.5% of quaternary ammonium hydroxide, 0.5-16.5% of water, 4.5-21.5% of isopropyl glycol monobenzyl ether, 0.5-5.5% of corrosion inhibitor and the balance of organic solvent. The invention utilizes 4-hydroxybutyric acid, diethylenetriamine, benzyl chloride, cinnamaldehyde and gamma- (2, 3-epoxy propoxy) propyl trimethoxy silane to gradually react to generate the corrosion inhibitor, and the corrosion inhibitor is introduced into the quaternary ammonium hydroxide photoresist cleaning agent, so that a compact protective film is easily formed on the surface of the copper foil or the aluminum foil due to the structural characteristics of a siloxane chain, mannich alkali, a benzene ring and imidazoline in the corrosion inhibitor, the corrosion of the quaternary ammonium hydroxide to the copper foil or the aluminum foil is avoided, and the photoresist is efficiently cleaned.)

1. The photoresist cleaning agent for the flexible panel is characterized by comprising the following components in percentage by weight: 1.5-9.5% of quaternary ammonium hydroxide, 0.5-16.5% of water, 4.5-21.5% of isopropyl glycol monobenzyl ether, 0.5-5.5% of corrosion inhibitor and the balance of organic solvent.

2. The photoresist cleaning agent for flexible panels according to claim 1, wherein the quaternary ammonium hydroxide is tetrabutylammonium hydroxide, tetraethylammonium hydroxide and benzyltrimethylammonium hydroxide in a mass ratio of 1-3: 1-3: 3-6, and mixing.

3. The photoresist cleaning agent for the flexible panel according to claim 1, wherein the organic solvent is dimethyl sulfoxide, 1, 3-dimethyl-2-imidazolidinone, and dimethyl ethanolamine according to a mass ratio of 4-8: 1-3: 1-3, and mixing.

4. The photoresist cleaning agent for flexible panels according to claim 1, wherein the corrosion inhibitor is prepared by the following steps:

step A, mixing 4-hydroxybutyric acid and diethylenetriamine, heating a reaction system to 83 ℃ under a stirring state, continuing to heat the reaction system to 153 ℃ under a circulating water condition until reactants are completely melted, starting a vacuum pump to react for 2.5 hours when gas is discharged, heating to 200 ℃ again to react for 3 hours when no gas is discharged, and cooling to room temperature under vacuum to obtain an intermediate 1;

b, heating and melting the intermediate 1, dropwise adding benzyl chloride at the speed of 1 drop/second, heating the reaction system to 102 ℃, reacting at constant temperature for 3.5 hours, adding potassium carbonate and dichloromethane when the reaction system is cooled to 35 ℃, reacting at constant temperature for 4 hours, and cooling to obtain an intermediate 2;

step C, heating and refluxing the intermediate 2 under stirring, adding cinnamyl aldehyde when the intermediate 2 is completely melted, heating to 92 ℃, carrying out reflux reaction for 12 hours, cooling, filtering, and drying in vacuum to constant weight to obtain an intermediate 3; mixing the intermediate 3 and pyridine, introducing high-purity nitrogen for 30min, then adding a Pd/C catalyst with the volume fraction of 10%, introducing hydrogen, stirring and reacting at room temperature for 24h under the protection of hydrogen, finishing the reaction, filtering, washing for 3 times by using methanol, combining filtrates, and evaporating the filtrate at room temperature under reduced pressure to obtain an intermediate 4;

and D, mixing the intermediate 4 with glacial acetic acid and gamma- (2, 3-epoxypropoxy) propyl trimethoxy silane, heating the reaction system to 54 ℃, stirring at constant temperature for reflux reaction for 12 hours, cooling to room temperature, and performing rotary evaporation to obtain the corrosion inhibitor.

5. The photoresist cleaning agent for the flexible panel according to claim 4, wherein the amount ratio of 4-hydroxybutyric acid to diethylenetriamine in step A is 1 mol: 1.5-2 mol.

6. The photoresist cleaning agent for flexible panels according to claim 4, wherein the ratio of the intermediate 1, benzyl chloride, potassium carbonate and dichloromethane in step B is 1 mol: 1 mol: 5-10 g: 60-150 Ml.

7. The photoresist cleaning agent for flexible panel according to claim 4, wherein the amount ratio of the intermediate 2 to cinnamaldehyde in step C is 0.1 mol: 0.12 mol.

8. The photoresist cleaning agent for flexible panels according to claim 4, wherein the dosage ratio of the intermediate 3, pyridine and Pd/C catalyst in step C is 0.1 mmol: 30-80 mL: 0.1-0.3 g.

9. The photoresist cleaning agent for flexible panels according to claim 4, wherein the ratio of the amount of intermediate 4, glacial acetic acid and gamma- (2, 3-epoxypropoxy) propyltrimethoxysilane used in step D is 0.1 mol: 30-100 mL: 0.12 mol.

10. The production process of the photoresist cleaning agent for the flexible panel according to claim 1, comprising the steps of:

step one, stirring quaternary ammonium hydroxide, isopropylene glycol monobenzyl ether, half amount of organic solvent and half amount of water at normal temperature and 3000r/min for 30-60min to obtain a mixed solution A;

and step two, stirring the corrosion inhibitor, the other half amount of the organic solvent and the other half amount of the water for 30-60min at 25-35 ℃ and 3000r/min for 2000-.

Technical Field

The invention belongs to the technical field of cleaning agents, and particularly relates to a photoresist cleaning agent for a flexible panel and a production process thereof.

Background

The flexible panel comprises an insulating film, an adhesive and copper foil. The insulating film forms the base layer of the circuit, and the adhesive bonds the copper foil to the insulating layer. In the multilayer design, the insulating film is then bonded to the inner layer. The insulating film is also used as a protective cover to insulate the circuit from dust and moisture and to reduce stress during flexing, and the copper foil forms a conductive layer. The copper foil can be Electrodeposited (ED), or plated. The electrodeposited copper foil has a glossy surface on one side and a dull matte surface on the other side. It is a flexible material that can be made in a wide variety of thicknesses and widths, and the matte side of the ED copper foil is often specially treated to improve its adhesion. The wrought copper foil has the characteristics of hardness and smoothness in addition to flexibility, and is suitable for being applied to occasions requiring dynamic deflection.

Currently, photoresist cleaning compositions are composed mainly of strong bases, polar organic solvents, and/or water, etc., and remove photoresist on a semiconductor wafer by immersing the semiconductor wafer in the cleaning agent or rinsing the semiconductor wafer with the cleaning agent. However, most of the photoresist cleaning agents in the industry have better cleaning capability for positive photoresist at present, but can not completely remove negative photoresist with cross-linked network structure, especially thick film negative photoresist after exposure and etching on the wafer. In addition, when the cleaning agent is used for cleaning the photoresist, damage to the copper foil in the flexible panel is inevitably caused, and particularly in the process of removing the photoresist and etching residues by using the chemical cleaning agent, corrosion of metals (especially more active metals such as aluminum and copper) is a relatively common and very serious problem, which often causes the remarkable reduction of the wafer yield.

For example, US5962197 proposes a photoresist cleaning composition comprising potassium hydroxide, propylene glycol ether, N-methylpyrrolidone, a surfactant, 1, 3-butanediol, diglycolamine, and water in an amount of less than 1% by mass. The semiconductor wafer is immersed in the cleaning agent, and the photoresist on the wafer is removed at 90-110 ℃. The cleaning agent contains potassium hydroxide, has high corrosion to a wafer substrate, and fragments-shaped strippings or colloidal swellers formed by stripping the photoresist can deposit or adhere on the surface of the wafer, so that the photoresist is remained and the wafer pattern is damaged. Also as in US4617251 a photoresist cleaning solution consisting of an alcohol amine and an organic polar solvent is proposed. A semiconductor wafer is immersed in the cleaning agent, and the positive photoresist on the wafer is removed at 95 ℃. However, the cleaning agent does not contain water, and the cleaning ability of the cleaning agent for negative photoresist is insufficient.

Therefore, it is necessary to develop a photoresist cleaning solution which has a strong cleaning ability and causes little damage to the flexible panel and the wafer pattern.

Disclosure of Invention

The invention aims to provide a photoresist cleaning agent for a flexible panel and a production process thereof.

The technical problem solved by the invention is as follows: the existing photoresist cleaning agent has the defects of insufficient photoresist cleaning capability or great damage to flexible panels and wafer patterns.

The purpose of the invention can be realized by the following technical scheme:

the photoresist cleaning agent for the flexible panel comprises the following components in percentage by weight: 1.5-9.5% of quaternary ammonium hydroxide, 0.5-16.5% of water, 4.5-21.5% of isopropyl glycol monobenzyl ether, 0.5-5.5% of corrosion inhibitor and the balance of organic solvent.

Further, the quaternary ammonium hydroxide is tetrabutylammonium hydroxide, tetraethylammonium hydroxide and benzyltrimethylammonium hydroxide according to a mass ratio of 1-3: 1-3: 3-6, and mixing.

Further, the organic solvent is dimethyl sulfoxide, 1, 3-dimethyl-2-imidazolidinone and dimethylethanolamine according to a mass ratio of 4-8: 1-3: 1-3, and mixing.

Further, the corrosion inhibitor is prepared by the following steps:

step A, adding 4-hydroxybutyric acid and diethylenetriamine into a three-neck flask provided with a condensation reflux device and a stirrer, heating a reaction system to 83 ℃ by using a heating jacket under the stirring state, continuing to heat the reaction system to 153 ℃ under the circulating water condition until reactants are completely melted, starting a vacuum pump when gas is discharged, reacting for 2.5 hours, heating to 200 ℃ when no gas is discharged, reacting for 3 hours, and cooling to room temperature under vacuum to obtain an intermediate 1, wherein the reaction formula is shown as follows, and the dosage ratio of the 4-hydroxybutyric acid to the diethylenetriamine is 1 mol: 1.5-2 mol;

and step B, heating and melting the intermediate 1, slowly dropwise adding benzyl chloride by using a constant-pressure dropping funnel, heating the reaction system to 102 ℃, reacting at a constant temperature for 3.5 hours, adding potassium carbonate and dichloromethane when the reaction system is cooled to 35 ℃, reacting at a constant temperature for 4 hours, and cooling to obtain an intermediate 2, wherein the reaction formula is shown as follows, wherein the dosage ratio of the intermediate 1, the benzyl chloride, the potassium carbonate and the dichloromethane is 1 mol: 1 mol: 5-10 g: 60-150 mL;

step C, adding the intermediate 2 into a three-neck flask with a stirrer and a reflux device, heating and refluxing under stirring, adding cinnamaldehyde when the intermediate 2 is completely melted, heating to 92 ℃, carrying out reflux reaction for 12 hours, cooling, filtering, and drying in vacuum to constant weight to obtain an intermediate 3; adding the intermediate 3 and pyridine into a three-neck flask with a stirrer and a reflux device, introducing high-purity nitrogen for 30min, then adding a volume fraction of 10% Pd/C catalyst, introducing hydrogen, stirring and reacting at room temperature for 24h under the protection of hydrogen, finishing the reaction, filtering, washing with methanol for 3 times, combining filtrates, and evaporating the filtrate at room temperature under reduced pressure to obtain an intermediate 4, wherein the reaction formula is shown as follows, and the dosage ratio of the intermediate 2 to cinnamaldehyde is 0.1 mol: 0.12mol, the dosage ratio of the intermediate 3, pyridine and Pd/C catalyst is 0.1 mmol: 30-80 mL: 0.1-0.3 g;

step D, adding the intermediate 4, glacial acetic acid and gamma- (2, 3-epoxypropoxy) propyl trimethoxy silane into a three-neck flask with a stirrer and a condensing device, heating the temperature of a reaction system to 54 ℃, stirring at a constant temperature for reflux reaction for 12 hours, cooling to room temperature, and performing rotary evaporation to obtain the corrosion inhibitor, wherein the reaction formula is shown as follows, wherein the dosage ratio of the intermediate 4, the glacial acetic acid and the gamma- (2, 3-epoxypropoxy) propyl trimethoxy silane is 0.1 mol: 30-100 mL: 0.12 mol.

The production process of the photoresist cleaning agent for the flexible panel comprises the following steps:

step one, stirring quaternary ammonium hydroxide, isopropylene glycol monobenzyl ether, half amount of organic solvent and half amount of water at normal temperature and 3000r/min for 30-60min to obtain a mixed solution A;

and step two, stirring the corrosion inhibitor, the other half amount of the organic solvent and the other half amount of the water for 30-60min at 25-35 ℃ and 3000r/min for 2000-.

The invention has the beneficial effects that:

1. the invention utilizes 4-hydroxy butyric acid and diethylenetriamine to react to form an intermediate 1, and then utilizes benzyl chloride

Performing benzyl protection on hydroxyl in a molecular structure of the inhibitor, performing quaternary ammonification on the inhibitor to obtain an intermediate 2, reacting cinnamyl aldehyde with the intermediate 2 to generate a manici alkali intermediate 3, removing benzyl by using the intermediate 3 under a Pd/C catalyst to obtain hydroxyl again to obtain an intermediate 4, and reacting the intermediate 4 with gamma- (2, 3-epoxypropoxy) propyl trimethoxy silane to generate the inhibitor, wherein the inhibitor has a siloxane structure, has the characteristics of the manici alkali and imidazoline quaternary ammonium salt inhibitor, has a plurality of coordination centers of metal and has a siloxane chain, so that the inhibitor has better dispersion performance in a cleaning agent;

2. the principle of the invention is that the corrosion inhibitor can be dispersed in the cleaning agent evenly and stably due to siloxane chains and is in even contact with copper foil or aluminum foil in the flexible panel, nitrogen atoms in the slow release agent provide adsorption points to form coordinate bonds with copper or aluminum, and because the great pi bonds of the manici alkali, the benzene ring and the imidazoline five-membered ring in the corrosion inhibitor form covalent bonds with copper or aluminum, a compact protective film is easily formed on the surface of the copper foil or aluminum foil, and the corrosion of quaternary ammonium hydroxide on the copper foil or aluminum foil is avoided.

In conclusion, the photoresist cleaning agent for the flexible panel provided by the invention utilizes the high-efficiency cleaning capability of the quaternary ammonium hydroxide on the photoresist, and avoids the corrosion of copper foil or aluminum foil in the flexible panel.

Detailed Description

The technical solutions in the embodiments of the present invention are clearly and completely described, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Example 1:

the corrosion inhibitor is prepared by the following steps:

step A, adding 4-hydroxybutyric acid and diethylenetriamine into a three-neck flask provided with a condensation reflux device and a stirrer, heating a reaction system to 83 ℃ by using a heating jacket under the stirring state, continuing to heat the reaction system to 153 ℃ under the circulating water condition until reactants are completely melted, starting a vacuum pump when gas is discharged, reacting for 2.5 hours, heating to 200 ℃ when no gas is discharged, reacting for 3 hours, and cooling to room temperature under vacuum to obtain an intermediate 1, wherein the dosage ratio of the 4-hydroxybutyric acid to the diethylenetriamine is 1 mol: 1.5 mol;

and step B, heating and melting the intermediate 1, slowly dropwise adding benzyl chloride by using a constant-pressure dropping funnel, heating the reaction system to 102 ℃, reacting at a constant temperature for 3.5 hours, adding potassium carbonate and dichloromethane when the reaction system is cooled to 35 ℃, reacting at a constant temperature for 4 hours, and cooling to obtain an intermediate 2, wherein the reaction formula is shown as follows, wherein the dosage ratio of the intermediate 1, the benzyl chloride, the potassium carbonate and the dichloromethane is 1 mol: 1 mol: 5 g: 60 mL;

step C, adding the intermediate 2 into a three-neck flask with a stirrer and a reflux device, heating and refluxing under stirring, adding cinnamaldehyde when the intermediate 2 is completely melted, heating to 92 ℃, carrying out reflux reaction for 12 hours, cooling, filtering, and drying in vacuum to constant weight to obtain an intermediate 3; adding the intermediate 3 and pyridine into a three-neck flask with a stirrer and a reflux device, introducing high-purity nitrogen for 30min, then adding a volume fraction of 10% Pd/C catalyst, introducing hydrogen, stirring and reacting at room temperature for 24h under the protection of hydrogen, finishing the reaction, filtering, washing with methanol for 3 times, combining filtrates, and evaporating the filtrate under reduced pressure at room temperature to remove the solvent to obtain an intermediate 4, wherein the dosage ratio of the intermediate 2 to cinnamaldehyde is 0.1 mol: 0.12mol, the dosage ratio of the intermediate 3, pyridine and Pd/C catalyst is 0.1 mmol: 30mL of: 0.1 g;

and D, adding the intermediate 4, glacial acetic acid and gamma- (2, 3-epoxypropoxy) propyl trimethoxy silane into a three-neck flask with a stirrer and a condensing device, heating the temperature of a reaction system to 54 ℃, stirring at a constant temperature for reflux reaction for 12 hours, cooling to room temperature, and performing rotary evaporation to obtain the corrosion inhibitor, wherein the dosage ratio of the intermediate 4, the glacial acetic acid and the gamma- (2, 3-epoxypropoxy) propyl trimethoxy silane is 0.1 mol: 30mL of: 0.12 mol.

Example 2:

the corrosion inhibitor is prepared by the following steps:

step A, adding 4-hydroxybutyric acid and diethylenetriamine into a three-neck flask provided with a condensation reflux device and a stirrer, heating a reaction system to 83 ℃ by using a heating jacket under the stirring state, continuing to heat the reaction system to 153 ℃ under the circulating water condition until reactants are completely melted, starting a vacuum pump when gas is discharged, reacting for 2.5 hours, heating to 200 ℃ when no gas is discharged, reacting for 3 hours, and cooling to room temperature under vacuum to obtain an intermediate 1, wherein the dosage ratio of the 4-hydroxybutyric acid to the diethylenetriamine is 1 mol: 2 mol;

and step B, heating and melting the intermediate 1, slowly dropwise adding benzyl chloride by using a constant-pressure dropping funnel, heating the reaction system to 102 ℃, reacting at a constant temperature for 3.5 hours, adding potassium carbonate and dichloromethane when the reaction system is cooled to 35 ℃, reacting at a constant temperature for 4 hours, and cooling to obtain an intermediate 2, wherein the reaction formula is shown as follows, wherein the dosage ratio of the intermediate 1, the benzyl chloride, the potassium carbonate and the dichloromethane is 1 mol: 1 mol: 10 g: 150 mL;

step C, adding the intermediate 2 into a three-neck flask with a stirrer and a reflux device, heating and refluxing under stirring, adding cinnamaldehyde when the intermediate 2 is completely melted, heating to 92 ℃, carrying out reflux reaction for 12 hours, cooling, filtering, and drying in vacuum to constant weight to obtain an intermediate 3; adding the intermediate 3 and pyridine into a three-neck flask with a stirrer and a reflux device, introducing high-purity nitrogen for 30min, then adding a volume fraction of 10% Pd/C catalyst, introducing hydrogen, stirring and reacting at room temperature for 24h under the protection of hydrogen, finishing the reaction, filtering, washing with methanol for 3 times, combining filtrates, and evaporating the filtrate under reduced pressure at room temperature to remove the solvent to obtain an intermediate 4, wherein the dosage ratio of the intermediate 2 to cinnamaldehyde is 0.1 mol: 0.12mol, the dosage ratio of the intermediate 3, pyridine and Pd/C catalyst is 0.1 mmol: 80mL of: 0.3 g;

and D, adding the intermediate 4, glacial acetic acid and gamma- (2, 3-epoxypropoxy) propyl trimethoxy silane into a three-neck flask with a stirrer and a condensing device, heating the temperature of a reaction system to 54 ℃, stirring at a constant temperature for reflux reaction for 12 hours, cooling to room temperature, and performing rotary evaporation to obtain the corrosion inhibitor, wherein the dosage ratio of the intermediate 4, the glacial acetic acid and the gamma- (2, 3-epoxypropoxy) propyl trimethoxy silane is 0.1 mol: 100mL of: 0.12 mol.

Example 3:

the photoresist cleaning agent for the flexible panel comprises the following components in percentage by weight: 1.5% quaternary ammonium hydroxide, 0.5% water, 4.5% isopropyl glycol monobenzyl ether, 0.5% of the corrosion inhibitor prepared in example 1, and the balance organic solvent;

the quaternary ammonium hydroxide is tetrabutylammonium hydroxide, tetraethylammonium hydroxide and benzyltrimethylammonium hydroxide according to the mass ratio of 1: 1: 3, mixing and combining;

the organic solvent is dimethyl sulfoxide, 1, 3-dimethyl-2-imidazolidinone and dimethylethanolamine according to a mass ratio of 4: 1: 1, mixing;

the preparation method comprises the following steps: step one, stirring quaternary ammonium hydroxide, isopropylene glycol monobenzyl ether, half amount of organic solvent and half amount of water at normal temperature and 2500r/min for 60min to obtain a mixed solution A;

and step two, stirring the corrosion inhibitor, the other half amount of organic solvent and the other half amount of water for 30-min at 25 ℃ and 2000r/min to obtain a mixed solution B, and then stirring the mixed solution A and the mixed solution B uniformly at 25 ℃ and 3000r/min to obtain the photoresist cleaning agent for the flexible panel.

Example 4:

the photoresist cleaning agent for the flexible panel comprises the following components in percentage by weight: 6% quaternary ammonium hydroxide, 010% water, 16% isopropyl glycol monobenzyl ether, 3% of the corrosion inhibitor prepared in example 2, and the balance organic solvent;

the quaternary ammonium hydroxide is tetrabutylammonium hydroxide, tetraethylammonium hydroxide and benzyltrimethylammonium hydroxide according to the mass ratio of 3: 3: 5, mixing and combining;

the organic solvent is dimethyl sulfoxide, 1, 3-dimethyl-2-imidazolidinone and dimethylethanolamine according to the mass ratio of 7: 2: 2, mixing and combining;

the preparation method comprises the following steps: refer to the preparation method in example 3.

Example 5:

the photoresist cleaning agent for the flexible panel comprises the following components in percentage by weight: 9.5% quaternary ammonium hydroxide, 16.5% water, 21.5% isopropyl glycol monobenzyl ether, 5.5% of the corrosion inhibitor prepared in example 1, the balance being organic solvent;

the quaternary ammonium hydroxide is tetrabutylammonium hydroxide, tetraethylammonium hydroxide and benzyltrimethylammonium hydroxide according to the mass ratio of 2: 3: 5, mixing and combining;

the organic solvent is dimethyl sulfoxide, 1, 3-dimethyl-2-imidazolidinone and dimethylethanolamine according to the mass ratio of 8: 3: 3, mixing and combining;

the preparation method comprises the following steps: refer to the preparation method in example 3.

Comparative example 1:

the photoresist cleaning agent for the flexible panel comprises the following components in percentage by weight: 1.5% quaternary ammonium hydroxide, 0.5% water, 4.5% isopropyl glycol monobenzyl ether, and the balance organic solvent;

the quaternary ammonium hydroxide is tetramethylammonium hydroxide, tetraethylammonium hydroxide and benzyltrimethylammonium hydroxide according to the mass ratio of 1: 1: 3, mixing and combining;

the organic solvent is dimethyl sulfoxide, 1, 3-dimethyl-2-imidazolidinone and dimethylethanolamine according to a mass ratio of 4: 1: 1, mixing;

the preparation method comprises the following steps: refer to the preparation method in example 3.

Comparative example 2:

the photoresist cleaning agent for the flexible panel comprises the following components in percentage by weight: 6% of quaternary ammonium hydroxide, 010% of water, 16% of isopropyl glycol monobenzyl ether, 3% of a corrosion inhibitor and the balance of an organic solvent;

the quaternary ammonium hydroxide is tetramethylammonium hydroxide, tetraethylammonium hydroxide and benzyltrimethylammonium hydroxide according to the mass ratio of 3: 3: 5, mixing and combining;

the organic solvent is dimethyl sulfoxide, 1, 3-dimethyl-2-imidazolidinone and dimethylethanolamine according to the mass ratio of 7: 2: 2, mixing and combining;

the corrosion inhibitor is chitosan citrate;

the preparation method comprises the following steps: refer to the preparation method in example 3.

Comparative example 3:

the photoresist cleaning agent for the flexible panel comprises the following components in percentage by weight: 9.5% quaternary ammonium hydroxide, 16.5% water, 21.5% isopropyl glycol monobenzyl ether, 5.5% of the corrosion inhibitor prepared in example 1, the balance being organic solvent;

the quaternary ammonium hydroxide is tetramethylammonium hydroxide, tetraethylammonium hydroxide and benzyltrimethylammonium hydroxide according to the mass ratio of 2: 3: 5, mixing and combining;

the organic solvent is dimethyl sulfoxide, 1, 3-dimethyl-2-imidazolidinone and dimethylethanolamine according to the mass ratio of 8: 3: 3, mixing and combining;

the corrosion inhibitor is chitosan citrate;

the preparation method comprises the following steps: refer to the preparation method in example 3.

Example 6:

1. the photoresist cleaning solutions of examples 3 to 5 and comparative examples 1 to 3 were used to clean semiconductor wafers to clean blank Cu wafers and to test the corrosion of metallic Cu. Test methods and conditions: immersing a blank Cu wafer of 4 multiplied by 4cm into a cleaning agent, oscillating for 60 minutes at the temperature of 20-85 ℃ by using a constant temperature oscillator, washing by deionized water, drying by using high-purity nitrogen, and measuring the change of the surface resistance of the blank Cu wafer before and after etching by using a quadrupole probe instrument. The results are shown in Table 1.

2. The photoresist cleaning solutions of examples 3 to 5 and comparative examples 1 to 3 were used to clean semiconductor wafers to clean bare Al wafers and to test corrosion of metallic Al. Test methods and conditions: immersing a blank Al wafer of 4 multiplied by 4cm into a cleaning agent, oscillating for 60 minutes at 20-85 ℃ by using a constant temperature oscillator, washing by deionized water, drying by using high-purity nitrogen, and measuring the change of the surface resistance of the blank Al wafer before and after etching by using a quadrupole probe instrument. The results are shown in Table 1.

3. The photoresist cleaning solution for cleaning the semiconductor wafers of examples 3 to 5 and comparative examples 1 to 3 was used to clean the photoresist on the semiconductor wafers. The cleaning method comprises the following steps: a semiconductor wafer (containing a pattern) containing a negative acrylate photoresist (having a thickness of about 60 μm and subjected to exposure and etching) was immersed in the obtained cleaning agent, oscillated at 20 to 85 ℃ for 1 to 30 minutes using a constant temperature oscillator, washed with deionized water, and then blown dry with high purity nitrogen. The cleaning effect of the photoresist and the etching of the wafer pattern by the cleaning agent composition are shown in table 1.

TABLE 1

As can be seen from the data in Table 1, the photoresist cleaning agent for the flexible panel provided by the invention can effectively clean the photoresist, and can avoid the corrosion of copper foil or aluminum foil in the flexible panel.

In the description herein, references to the description of "one embodiment," "an example," "a specific example" or the like are intended to mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

The foregoing is merely exemplary and illustrative of the principles of the present invention and various modifications, additions and substitutions of the specific embodiments described herein may be made by those skilled in the art without departing from the principles of the present invention or exceeding the scope of the claims set forth herein.