阅读说明：本技术 基于单面工艺的非接触式红外温度传感器的制作方法 (Method for manufacturing non-contact infrared temperature sensor based on single-sided process ) 是由 张颖 王旭洪 宓斌玮 叶建忠 于 2018-06-05 设计创作，主要内容包括：本发明提供一种基于单面工艺的非接触式红外温度传感器的制作方法,包括：于基底中刻蚀凹槽；于凹槽中填充低温气化材料；于基底及低温气化材料上制作非接触式红外温度传感器结构,保留气化通孔；以及在气化气氛下加热低温气化材料,使低温气化材料气化并藉由气化通孔排出,释放出凹槽,以形成非接触式红外温度传感器的绝热空腔。本发明利用常态下呈固体,在气化气氛下加热可以气化而被完全消耗的低温气化材料,采用单面工艺替代传统的双面工艺对硅衬底进行加工形成绝热腔,完成非接触式红外温度传感器的制作。本发明解决了双面工艺对准精度要求高、耗时长,成本高等缺点,可大大提高生产效率,降低产品成本。(the invention provides a method for manufacturing a non-contact infrared temperature sensor based on a single-sided process, which comprises the following steps: etching a groove in the substrate; filling a low-temperature gasification material in the groove; manufacturing a non-contact infrared temperature sensor structure on the substrate and the low-temperature gasification material, and reserving a gasification through hole; and heating the low-temperature gasification material in a gasification atmosphere to gasify the low-temperature gasification material and discharge the gasified low-temperature gasification material through the gasification through hole, and releasing the gasified low-temperature gasification material out of the groove to form a heat insulation cavity of the non-contact infrared temperature sensor. The invention uses the low-temperature gasification material which is solid in a normal state and can be gasified and completely consumed by heating in a gasification atmosphere, and adopts a single-sided process to replace the traditional double-sided process to process a silicon substrate to form a heat insulation cavity so as to finish the manufacture of the non-contact infrared temperature sensor. The invention overcomes the defects of high requirement on alignment precision, long time consumption, high cost and the like of the double-sided process, can greatly improve the production efficiency and reduce the product cost.)

1. A method for manufacturing a non-contact infrared temperature sensor based on a single-sided process is characterized by comprising the following steps:

1) providing a substrate, and etching a groove in the substrate;

2) Filling a low-temperature gasification material in the groove, wherein the low-temperature gasification material is solid at a first temperature and is gasified to be gas at or above a second temperature in a gasification atmosphere environment, and the second temperature is higher than the first temperature;

3) Grinding and removing the low-temperature gasification material on the surface of the substrate, and reserving the low-temperature gasification material in the groove, so that the top surface of the low-temperature gasification material and the top surface of the substrate are in the same plane;

4) Manufacturing a non-contact infrared temperature sensor structure on the substrate and the low-temperature gasification material under a non-gasification atmosphere environment, wherein a gasification through hole is reserved in the non-contact infrared temperature sensor structure, and the low-temperature gasification material is exposed out of the gasification through hole; and

5) And heating the low-temperature gasification material to the second temperature or above in a gasification atmosphere environment, so that the low-temperature gasification material is gasified and discharged through the gasification through hole, and the groove is released to form a heat insulation cavity of the non-contact infrared temperature sensor.

2. The method for manufacturing a non-contact infrared temperature sensor based on a single-sided process as claimed in claim 1, wherein: the first temperature is in the range of 0-350 ℃, and the second temperature is in the range of 350-400 ℃.

3. the method for manufacturing a non-contact infrared temperature sensor based on a single-sided process as claimed in claim 1, wherein: and 2) filling the low-temperature gasification material in the groove in a spin coating mode, and curing the low-temperature gasification material to ensure the support strength.

4. the method for manufacturing a non-contact infrared temperature sensor based on a single-sided process as claimed in claim 1, wherein: the step 4) comprises the following steps:

4-1) forming a heat insulation supporting layer on the substrate and the surface of the low-temperature gasification material, and forming a gasification through hole in the heat insulation supporting layer; and

4-2) forming a thermoelectric structure on the heat insulation supporting layer, wherein the thermoelectric structure comprises a hot section and a cold section, the hot section and the cold section are respectively positioned at two ends of the thermoelectric structure, and when a temperature difference exists between the hot section and the cold section, carriers in the thermoelectric structure flow from the hot section to the cold section to generate a detection electromotive force.

5. The method for manufacturing a non-contact infrared temperature sensor based on a single-sided process as claimed in claim 4, wherein: the thermoelectric structure is manufactured on the surface of the heat insulation supporting layer above the heat insulation cavity, so that the thermoelectric structure is isolated from the substrate through the heat insulation supporting layer and the cavity, and the detection precision of the thermoelectric structure is improved.

6. The method for manufacturing a non-contact infrared temperature sensor based on a single-sided process as claimed in claim 4, wherein: and forming the heat insulation supporting layer on the substrate and the surface of the low-temperature gasification material by adopting a chemical vapor deposition process.

7. The method for manufacturing a non-contact infrared temperature sensor based on a single-sided process as claimed in claim 4, wherein: the base comprises a silicon substrate, and the heat-insulating support layer comprises one of a silicon dioxide layer, a silicon nitride layer and a silicon oxynitride layer.

8. The method for manufacturing a non-contact infrared temperature sensor based on a single-sided process as claimed in claim 1, wherein: the gasification through hole is circular, and the diameter range of the gasification through hole is between 1 and 10 mu m, so that the gasification efficiency of the low-temperature gasification material is improved.

9. The method for manufacturing a non-contact infrared temperature sensor based on a single-sided process as claimed in claim 1, wherein: heating the low-temperature gasification material to a temperature range of 350-400 ℃ in a gasification atmosphere, so that the low-temperature gasification material is gasified and discharged through the gasification through hole.

10. The method for manufacturing a non-contact infrared temperature sensor based on a single-sided process as claimed in claim 1, wherein: the depth range of the groove is 20-100 μm, so that the heat insulation performance of the heat insulation cavity is improved, and the heating gasification efficiency of the low-temperature gasification material is improved, so that the low-temperature gasification material is completely removed.

11. The method for manufacturing a non-contact infrared temperature sensor based on a single-sided process according to any one of claims 1 to 10, wherein the method comprises the following steps: in the step 5), the gasification is carried out in a reduced pressure atmosphere to increase the gasification rate of the low-temperature gasification material.

Technical Field

The invention relates to a method for manufacturing a non-contact infrared temperature sensor, in particular to a method for manufacturing a non-contact infrared temperature sensor based on a single-sided process.

Background

The temperature is a physical quantity representing the cold and hot degree of an object, and is a physical quantity which needs to be sensed by a human at any moment. The italian scientist galileo in 1593 invented a first air thermometer, which was made of an elongated glass tube. One end of the device is made into a hollow spherical shape; the other end is opened, a certain amount of colored water is filled in the tube in advance, and the other end is inserted into the container filled with the water in an inverted mode. The glass tube is marked with scales at equal distances. By utilizing the principle of expansion with heat and contraction with cold of gas, when the external temperature rises, the gas in the glass ball expands to lower the water level in the glass tube; on the contrary, when the temperature is lower, the gas in the glass ball contracts, and the water level in the glass tube rises. In 1654, the first alcohol thermometer in the world was developed by the student of galileo, feidinan; 1659 in the year, Mercury thermometers were manufactured by British astronaut. With the development of science and technology, people have higher and higher requirements on temperature measuring instruments. By the beginning of the last 20 th century of the 19 th century, many scientists invented various types of novel thermometers such as resistance thermometers, radiation-type pyrometers, optical pyrometers, hydrogen thermometers, etc. by applying various physical principles.

The mercury thermometer is widely used all over the world due to the advantages of convenience in use, low cost and the like, almost every household has the habit of being equipped with the mercury thermometer, and large quantities of large medical institutions use the mercury thermometer in batches. However, since mercury is extremely harmful to humans and the environment, a household mercury thermometer containing about 1 g of mercury is broken, and then the leaked mercury evaporates, once the mercury vapor is inhaled by a human, the mercury vapor enters the human body through blood circulation, and the central nervous system is damaged. About 1.2 million mercury-containing thermometers are produced annually in china, and more than 10 tons of mercury are disposed of as waste because of breakage of the mercury thermometers each year. In 2013, the Water-premium convention sponsored by the environmental planning agency of the United nations was committed to the conference of the grant, 92 countries and regional representatives including China signed the Water-premium convention advocated by the world health organization, aiming to phase out numerous products including mercury thermometers in 2020. The convention is the first legally binding convention signed globally for mercury, a highly toxic metal, and began to take effect in 2016. China promises to be eliminated from mercury thermometers in 2016 within 7 years.

Under the condition, the electronic thermometer, particularly the infrared thermometer, is gradually accepted by people, has the characteristics of high temperature measurement sensitivity, wide exploration scale, high speed, no disturbance on a measured guideline, safe application and the like, and has the functions of non-touch temperature measurement, high accuracy and sound prompt when the body temperature is higher. In the countries of the europe and the america, the infrared clinical thermometer basically exists in every family and hospital, and the popularization and construction of China are accelerated at this side. According to the statistics of 2017, about 700 thousands of mercury thermometers are expected to be replaced in China hospitals, and 3500 thousands of mercury thermometers are expected to be replaced in 2020, so that the large market space and the large prospect are brought to great business opportunities.

The existing non-contact infrared temperature sensor is widely processed by a double-sided process, and the common method is that after thermoelectric materials are made on the front side of a silicon substrate, in order to achieve a good heat insulation effect, silicon with excellent heat conductivity needs to be etched cleanly from the back side of the silicon substrate, and only a supporting structure with poor heat conductivity is reserved. However, the double-sided process has high requirement on the lithography alignment precision, expensive processing equipment and long time consumption, and is a bottleneck process of mass production of the non-contact infrared temperature sensor.

Based on the above, it is necessary to provide a method for manufacturing a non-contact infrared temperature sensor, which can effectively reduce the requirement of lithography alignment accuracy and can effectively reduce the cost.

Disclosure of Invention

In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a method for manufacturing a non-contact infrared temperature sensor based on a single-sided process, which is used to solve the problems of high requirement of the double-sided process on the lithography alignment precision, expensive processing equipment and long time consumption in the prior art.

In order to achieve the above and other related objects, the present invention provides a method for manufacturing a non-contact infrared temperature sensor based on a single-sided process, the method comprising: 1) providing a substrate, and etching a groove in the substrate; 2) filling a low-temperature gasification material in the groove, wherein the low-temperature gasification material is solid at a first temperature and is gasified to be gas at or above a second temperature in a gasification atmosphere environment, and the second temperature is higher than the first temperature; 3) grinding and removing the low-temperature gasification material on the surface of the substrate, and reserving the low-temperature gasification material in the groove, so that the top surface of the low-temperature gasification material and the top surface of the substrate are in the same plane; 4) manufacturing a non-contact infrared temperature sensor structure on the substrate and the low-temperature gasification material under a non-gasification atmosphere environment, wherein a gasification through hole is reserved in the non-contact infrared temperature sensor structure, and the low-temperature gasification material is exposed out of the gasification through hole; and 5) heating the low-temperature gasification material to the second temperature or above in a gasification atmosphere environment, so that the low-temperature gasification material is gasified and discharged through the gasification through hole, and the groove is released to form a heat insulation cavity of the non-contact infrared temperature sensor.

Preferably, the first temperature ranges from 0 ℃ to 350 ℃, and the second temperature ranges from 350 ℃ to 400 ℃.

Preferably, in the step 2), the groove is filled with the low-temperature gasification material by a spin coating method, and the low-temperature gasification material is cured to ensure the support strength.

Preferably, step 4) comprises: 4-1) forming a heat insulation supporting layer on the substrate and the surface of the low-temperature gasification material, and forming a gasification through hole in the heat insulation supporting layer; and 4-2) forming a thermoelectric structure on the heat insulation supporting layer, wherein the thermoelectric structure comprises a hot section and a cold section, the hot section and the cold section are respectively positioned at two ends of the thermoelectric structure, and when a temperature difference exists between the hot section and the cold section, carriers in the thermoelectric structure flow from the hot section to the cold section to generate a detection electromotive force.

Preferably, the thermoelectric structure is fabricated on the surface of the heat insulating support layer above the heat insulating cavity, so that the thermoelectric structure is isolated from the substrate by the heat insulating support layer and the cavity, thereby improving the detection accuracy of the thermoelectric structure.

preferably, the heat insulating support layer is formed on the substrate and the surface of the low-temperature gasification material by using a chemical vapor deposition process.

Preferably, the base comprises a silicon substrate, and the thermally insulating support layer comprises one of a silicon dioxide layer, a silicon nitride layer, and a silicon oxynitride layer.

Preferably, the gasification through hole is circular, and the diameter of the gasification through hole ranges from 1 μm to 10 μm, so as to improve the gasification efficiency of the low-temperature gasification material.

Preferably, the low-temperature gasification material is heated to a temperature range of 350-400 ℃ in a gasification atmosphere, so that the low-temperature gasification material is gasified and discharged through the gasification through hole.

Preferably, the depth of the groove ranges from 20 μm to 100 μm to improve the heat insulation performance of the heat insulation cavity and simultaneously improve the heating gasification efficiency of the low-temperature gasification material to completely remove the low-temperature gasification material.

Preferably, in step 5), the gasification is performed under a reduced pressure atmosphere to increase a gasification rate of the low-temperature gasification material.

as described above, the method for manufacturing the non-contact infrared temperature sensor based on the single-sided process of the present invention has the following beneficial effects:

the invention uses the low-temperature gasification material which is solid in a normal state and can be gasified and completely consumed by heating in a gasification atmosphere environment, and adopts a single-sided process to replace the traditional double-sided process to process a silicon substrate to form a heat insulation cavity, thereby completing the manufacture of the non-contact infrared temperature sensor. The invention overcomes the defects of high requirement on alignment precision, long time consumption, high cost and the like of the double-sided process, can greatly improve the production efficiency and reduce the product cost.

drawings

Fig. 1 is a schematic flow chart showing steps of a method for manufacturing a non-contact infrared temperature sensor based on a single-sided process according to the present invention.

Fig. 2 to 8 are schematic structural diagrams showing steps of a method for manufacturing a non-contact infrared temperature sensor based on a single-sided process according to the present invention.

Description of the element reference numerals

101 substrate

102 groove

103 low temperature gasification material

104 thermally insulating support layer

105 gasification through hole

106 thermoelectric structure

107 cold joint

108 heat section

S11-S15 steps 1) -5)

Detailed Description

The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.

Please refer to fig. 1 to 8. It should be noted that the drawings provided in the present embodiment are only for illustrating the basic idea of the present invention, and the drawings only show the components related to the present invention rather than being drawn according to the number, shape and size of the components in actual implementation, and the type, quantity and proportion of each component in actual implementation may be changed arbitrarily, and the layout of the components may be more complicated.

As shown in fig. 1 to 8, the present embodiment provides a method for manufacturing a non-contact infrared temperature sensor based on a single-sided process, where the method includes:

As shown in fig. 1 to fig. 3, step 1) S11 is performed first, a substrate 101 is provided, and a groove 102 is etched in the substrate 101.

For example, the base 101 may be a silicon substrate, and the groove 102 may be etched in the silicon substrate by using a dry etching process, such as Inductively Coupled Plasma (ICP), and the depth of the groove 102 ranges from 20 μm to 100 μm, so as to improve the thermal insulation performance of the thermal insulation cavity and improve the sensitivity of the non-contact infrared temperature sensor, and at the same time, it is ensured that the depth of the groove 102 is not too large to reduce the heating and vaporizing efficiency of the subsequent low-temperature vaporized material 103, and the low-temperature vaporized material 103 can be completely removed.

As shown in fig. 1 and 4, step 2) S12 is performed to fill the cavity 102 with a low-temperature gasification material 103, where the low-temperature gasification material 103 is solid at a first temperature and gasifies into a gas at a second temperature or higher in a gasification atmosphere environment, where the second temperature is higher than the first temperature, and the gasification atmosphere environment is an atmosphere environment that can cause the low-temperature gasification material to generate a physical reaction or/and a chemical reaction to achieve solid-gas conversion.

The groove 102 is filled with the low-temperature gasification material 103 by spin coating, and the low-temperature gasification material 103 is cured to ensure the support strength.

In this embodiment, the first temperature range is between 0 ℃ and 350 ℃ to ensure that the low-temperature gasification material 103 maintains a stable supporting function during a subsequent non-contact infrared temperature sensor structure, and the second temperature range is between 350 ℃ and 400 ℃ to ensure that the subsequent gasification process can be performed at a lower temperature without damaging the non-contact infrared temperature sensor structure.

As shown in fig. 1 and 5, step 3) S13 is performed to remove the low-temperature gasification material 103 from the surface of the substrate 101 by grinding, and the low-temperature gasification material 103 in the groove 102 is remained, so that the top surface of the low-temperature gasification material 103 is in the same plane as the top surface of the substrate 101.

As shown in fig. 1 and 6 to 7, step 4) S14 is performed to fabricate a non-contact infrared temperature sensor structure on the substrate 101 and the low-temperature gasification material 103, wherein a gasification through hole 105 is reserved in the non-contact infrared temperature sensor structure, and the low-temperature gasification material 103 is exposed from the gasification through hole 105.

As an example, step 4) comprises:

As shown in fig. 6, step 4-1) is performed to form a heat insulating support layer 104 on the surface of the substrate 101 and the low temperature gasification material 103, and form a gasification through hole 105 in the heat insulating support layer 104.

For example, a chemical vapor deposition process may be used to form the thermally insulating support layer 104 on the surface of the substrate 101 and the low temperature gasification material 103. The thermally insulating support layer 104 includes one of a silicon dioxide layer, a silicon nitride layer, and a silicon oxynitride layer.

A vaporization via 105 may be formed in the heat insulating support layer 104 by a dry etching process, and the vaporization via 105 is preferably circular and has a diameter ranging from 1 μm to 10 μm, so as to improve the vaporization efficiency of the low-temperature vaporization material 103.

As shown in fig. 1 and fig. 7, step 4-2) is then performed to form a thermoelectric structure 106 on the insulating support layer 104, where the thermoelectric structure 106 includes a hot node 108 and a cold node 107, and the hot node 108 and the cold node 107 are respectively located at two ends of the thermoelectric structure 106, and when there is a temperature difference between the hot node 108 and the cold node 107, carriers in the thermoelectric structure 106 flow from the hot node 108 to the cold node 107, so as to generate a detection electromotive force.

As shown in fig. 1 and 8, step 5) S15 is finally performed, in which the low-temperature gasification material 103 is heated to the second temperature or higher in a gasification atmosphere environment, so that the low-temperature gasification material 103 is gasified and discharged through the gasification through hole 105, and the groove 102 is released, thereby forming a heat insulation cavity of the non-contact infrared temperature sensor.

preferably, the low-temperature gasification material 103 is heated to a temperature range of 350 ℃ to 400 ℃ in a gasification atmosphere environment, so that the low-temperature gasification material 103 is gasified and discharged through the gasification through hole 105, and the temperature range can ensure that the low-temperature gasification material 103 can be completely gasified and consumed without damaging the structure of the non-contact infrared temperature sensor.

Preferably, in step 5), the gasification is performed under a reduced pressure atmosphere to increase the gasification rate of the low-temperature gasification material 103.

Preferably, the thermoelectric structure 106 is fabricated on the surface of the insulating support layer 104 above the insulating cavity, so that the thermoelectric structure 106 is isolated from the substrate 101 by the insulating support layer 104 and the cavity, thereby improving the detection accuracy of the thermoelectric structure 106.

As described above, the method for manufacturing the non-contact infrared temperature sensor based on the single-sided process of the present invention has the following beneficial effects:

The invention uses the low-temperature gasification material 103 which is solid in a normal state and can be gasified and completely consumed by heating in a gasification atmosphere environment, and adopts a single-sided process to replace the traditional double-sided process to process a silicon substrate to form a heat insulation cavity, thereby completing the manufacture of the non-contact infrared temperature sensor. The invention overcomes the defects of high requirement on alignment precision, long time consumption, high cost and the like of the double-sided process, can greatly improve the production efficiency and reduce the product cost.

Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.

The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.