阅读说明：本技术 一种小型化大负载固态继电器的制造方法 (Manufacturing method of miniaturized heavy-load solid-state relay ) 是由 勾红璋 舒德兵 余贵龙 裴雨滋 于 2021-07-16 设计创作，主要内容包括：本发明提供了一种小型化大负载固态继电器的制造方法,设置发光二极管D1、光伏V1组成驱动控制电路,且通过光隔离；三极管Q1、电容C1、开关二极管D4、D5组成放大充电电路；开关二极管D3、光伏V1组成泄放电路；MOS芯片V2、V3组成开关电路,采用微组装工艺进行制造,元器件采用环氧导电胶粘接,各元器件采用键合工艺互联,最后采用平行封焊工艺封装。本发明提供了一种小型化大负载固态继电器的制造方法,通过设计快速充泄放电路,在减小产品体积的同时,提高继电器驱动能力。(The invention provides a manufacturing method of a miniaturized heavy-load solid-state relay, which is characterized in that a light-emitting diode D1 and a photovoltaic V1 are arranged to form a driving control circuit, and the driving control circuit is isolated by light; the triode Q1, the capacitor C1, the switch diode D4 and the switch diode D5 form an amplifying charging circuit; the switch diode D3 and the photovoltaic V1 form a bleeder circuit; the MOS chips V2 and V3 form a switch circuit, the switch circuit is manufactured by adopting a micro-assembly process, the components are adhered by epoxy conductive adhesive, the components are interconnected by adopting a bonding process, and finally, the switch circuit is packaged by adopting a parallel sealing and welding process. The invention provides a manufacturing method of a miniaturized heavy-load solid-state relay, which improves the driving capability of the relay while reducing the product volume by designing a quick charge and discharge circuit.)

1. A manufacturing method of a miniaturized solid-state relay with a large load is characterized by comprising the following steps:

the method comprises the following steps: electrodes are arranged on the tube shell and the inner ceramic chip according to the driving circuit in a partition mode, and the electrodes are metalized to form a bonding pad; photovoltaic V1, MOS chips V2 and V3, a light emitting diode D1, diode switches D2, D3, D4 and D5, a triode Q1, resistors R1 and R2 and a capacitor C1 are processed into a patch shape, the light emitting diode D1, the diode switches D2, D3, D4 and D5, the photovoltaic V1, the MOS chips V2 and V3 and the triode Q1 are all bare chips, and the resistors R1 and R2 are chip resistors;

step two: assembling by adopting a micro-assembly process, placing a photovoltaic V1, MOS chips V2 and V3, diode switches D3, D4 and D5, a triode Q1, resistors R1 and R2 and a capacitor C1 on each bonding pad of a tube shell, connecting each component according to the connection relation of a driving circuit in a bonding contact mode, and fixing by using epoxy conductive adhesive;

step three: placing the light emitting diode D1 and the diode switch D2 on each bonding pad of the inner ceramic chip, connecting the light emitting diode D1 and the diode switch D2 according to the connection relationship of a driving circuit in a bonding contact mode, and fixing the light emitting diode D1 and the diode switch D2 through epoxy conductive adhesive;

step four: and buckling the inner ceramic chip on the tube shell to enable the light emitting part of the light emitting diode D1 to be aligned with the photovoltaic V1, and finally carrying out parallel sealing and welding process to package the light emitting diode D1 into a whole.

2. A method of manufacturing a miniaturized, heavy-duty solid-state relay according to claim 1, characterized in that: in the second step, the bonding surfaces of the positive electrode and the negative electrode of the photovoltaic V1 are arranged on the same side; the positive and negative electrodes of the diode switches D3, D4 and D5 are respectively arranged on the positive and negative surfaces; bonding surfaces of the positive electrode and the negative electrode of the resistors R1 and R2 are arranged on the same side; the bonding surface of the base electrode and the emitting electrode of the triode Q1 is arranged on the front surface, and the bonding surface of the collector electrode is arranged on the back surface; the front sides of the MOS chips V2 and V3 are set as bonding surfaces of the source electrodes, a small area is divided on the front sides and set as a bonding surface of the grid electrode, and the back sides are the bonding surfaces of the drain electrodes; the non-bonding surface of the photovoltaic V1, the negative electrodes of the diode switches D3, D4 and D5, the non-bonding surface of the resistors R1 and R2, the collector of the triode Q1 and the drain electrodes of the MOS chips V2 and V3 are respectively attached and fixed with each bonding pad of the package according to a driving circuit.

3. A method of manufacturing a miniaturized, heavy-duty solid-state relay according to claim 1, characterized in that: in the third step, the positive electrode and the negative electrode of the light-emitting diode D1 and the diode switch D2 are respectively arranged on the positive surface and the negative surface; the cathode of the light emitting diode D1 and the cathode of the diode switch D2 are respectively attached and fixed with each bonding pad of the inner ceramic sheet according to the driving circuit.

4. A miniaturized, heavy-duty solid-state relay according to any one of claims 1 to 3, characterized in that: the LED drive circuit comprises a tube shell, inner ceramic chips and a drive circuit, wherein the drive circuit comprises a light emitting diode D1, a switch diode D4, a photovoltaic V1, a triode Q1, a capacitor C1, an MOS chip V2 and a resistor R1, the light emitting diode D1 is connected with an input power supply to provide a light drive signal for the photovoltaic V1, the output positive electrode of a photovoltaic V1 is connected with the source electrode of the MOS chip V2, the drain electrode of the MOS chip V2 is connected with the positive electrode of the switch diode D4, a capacitor C1 is connected in parallel between the negative electrode of the switch diode D4 and the source electrode of the MOS chip V2, the negative electrode of the switch diode D4 is connected with the collector electrode of the triode Q1, the base electrode of the triode Q1 is connected with the output negative electrode of the photovoltaic V1, and a resistor R1 is connected in series between the grid electrode of the MOS chip V2 and the emitter electrode of the triode Q1; the light emitting diode D1, the diode switch D4, the photovoltaic V1, the triode Q1, the capacitor C1, the MOS chip V2 and the resistor R1 are all patch-shaped structures and are electrically connected through bonding contact, the light emitting diode D1, the diode switch D4, the photovoltaic V1, the MOS chip V2 and the triode Q1 are bare chips, a plurality of electrode pads are respectively arranged on the tube shell and the inner ceramic chip, the diode switch D4, the photovoltaic V1, the MOS chip V2, the triode Q1, the capacitor C1 and the resistor R1 are respectively and fixedly attached to each electrode pad of the tube shell, the light emitting diode D1 is fixedly attached to the electrode pad of the inner ceramic chip, the inner ceramic chip is buckled on the tube shell, and the light emitting diode D1 is aligned with the photovoltaic V1.

5. A miniaturized, high-load solid-state relay as claimed in claim 4, wherein: the light emitting diode D1 is connected in series with a switch diode D2.

6. A miniaturized, high-load solid-state relay as claimed in claim 4, wherein: a switch diode D3 is connected in parallel between the base electrode and the emitter electrode of the triode Q1, the anode of the switch diode D3 is connected with the emitter electrode of the triode Q1, the cathode of the switch diode D3 is connected with the base electrode of the triode Q1, and the switch diode D3 is of a patch-shaped structure and is fixed on an electrode pad of the tube shell.

7. A miniaturized, high-load solid-state relay as claimed in claim 4, wherein: the capacitor C1 is a ceramic dielectric capacitor, and the capacitance value of the capacitor C1 is an order of magnitude larger than the junction capacitance of the MOS chip V2.

8. A miniaturized, high-load solid-state relay as claimed in claim 4, wherein: the resistor R1 is a chip resistor.

9. A miniaturized, high-load solid-state relay as claimed in claim 4, wherein: the LED bulb further comprises an MOS chip V3, a resistor R2 and a switch diode D5, wherein the source electrode of the MOS chip V3 is connected with the output positive electrode of the photovoltaic V1, a resistor R2 is connected in series between the grid electrode of the MOS chip V3 and the emitter electrode of the triode Q1, the drain electrode of the MOS chip V3 is connected with the positive electrode of the switch diode D5, the negative electrode of the switch diode D5 is connected with the collector electrode of the triode Q1, the MOS chip V3, the resistor R2 and the switch diode D5 are all of patch-shaped structures and are electrically connected through bonding contact, and the MOS chip V3, the resistor R2 and the switch diode D5 are fixedly attached to electrode pads of the bulb respectively.

10. A miniaturized, high-load solid-state relay as claimed in claim 9, wherein: the resistor R2 is a chip resistor.

Technical Field

The invention belongs to the technical field of relays, and particularly relates to a manufacturing method of a miniaturized large-load solid-state relay.

Background

For a relay, a relay is a switch with input and output isolation. Generally speaking, the small size and the load capacity are the continuous pursuit of the relay. At present, the relay type with the minimum volume is a ceramic-packaged optical MOS relay, the load capacity of the relay needs to be improved, and the large load can be guaranteed only if the drive capacity is improved. At present, conventional photo-MOS relays drive MOS chips through photovoltaics, for example, a solid-state relay provided in chinese patent publication No. CN103516343A, because the driving capability of photovoltaics is weak, it is difficult to drive MOS chips with large loads, because MOS chips with large loads have large junction capacitance, and the driving current of photovoltaics is small. In order to improve the driving capability, a driving circuit is generally required to improve the driving capability, for example, a photo-coupler provided in chinese patent publication No. CN101872761A achieves the purpose of improving the driving capability by connecting multiple light-receiving elements (photovoltaics) in parallel, but the parallel connection is very limited because the driving current of the light-receiving elements is generally several to several tens of microamperes, and the driving current cannot meet the requirement if a large load is to be driven, and the volume of the light-receiving elements is increased after the multiple light-receiving elements are connected in parallel, which cannot meet the requirement of miniaturization of the large load.

Disclosure of Invention

In order to solve the technical problems, the invention provides a manufacturing method of a miniaturized heavy-load solid-state relay, which improves the driving capability of the relay while reducing the product volume by designing a quick charge and discharge circuit.

The invention is realized by the following technical scheme:

a manufacturing method of a miniaturized heavy-load solid-state relay comprises the following steps:

the method comprises the following steps: electrodes are arranged on the tube shell and the inner ceramic chip according to the driving circuit in a partition mode, and the electrodes are metalized to form a bonding pad; photovoltaic V1, MOS chips V2 and V3, a light emitting diode D1, diode switches D2, D3, D4 and D5, a triode Q1, resistors R1 and R2 and a capacitor C1 are processed into a patch shape, the light emitting diode D1, the diode switches D2, D3, D4 and D5, the photovoltaic V1, the MOS chips V2 and V3 and the triode Q1 are all bare chips, and the resistors R1 and R2 are chip resistors;

step two: assembling by adopting a micro-assembly process, placing a photovoltaic V1, MOS chips V2 and V3, diode switches D3, D4 and D5, a triode Q1, resistors R1 and R2 and a capacitor C1 on each bonding pad of a tube shell, connecting each component according to the connection relation of a driving circuit in a bonding contact mode, and fixing by using epoxy conductive adhesive;

step three: placing the light emitting diode D1 and the diode switch D2 on each bonding pad of the inner ceramic chip, connecting the light emitting diode D1 and the diode switch D2 according to the connection relationship of a driving circuit in a bonding contact mode, and fixing the light emitting diode D1 and the diode switch D2 through epoxy conductive adhesive;

step four: and buckling the inner ceramic chip on the tube shell to enable the light emitting part of the light emitting diode D1 to be aligned with the photovoltaic V1, and finally carrying out parallel sealing and welding process to package the light emitting diode D1 into a whole.

In the second step, the bonding surfaces of the positive electrode and the negative electrode of the photovoltaic V1 are arranged on the same side; the positive and negative electrodes of the diode switches D3, D4 and D5 are respectively arranged on the positive and negative surfaces; bonding surfaces of the positive electrode and the negative electrode of the resistors R1 and R2 are arranged on the same side; the bonding surface of the base electrode and the emitting electrode of the triode Q1 is arranged on the front surface, and the bonding surface of the collector electrode is arranged on the back surface; the front sides of the MOS chips V2 and V3 are set as bonding surfaces of the source electrodes, a small area is divided on the front sides and set as a bonding surface of the grid electrode, and the back sides are the bonding surfaces of the drain electrodes; the non-bonding surface of the photovoltaic V1, the negative electrodes of the diode switches D3, D4 and D5, the non-bonding surface of the resistors R1 and R2, the collector of the triode Q1 and the drain electrodes of the MOS chips V2 and V3 are respectively attached and fixed with each bonding pad of the package according to a driving circuit.

In the third step, the positive electrode and the negative electrode of the light-emitting diode D1 and the diode switch D2 are respectively arranged on the positive surface and the negative surface; the cathode of the light emitting diode D1 and the cathode of the diode switch D2 are respectively attached and fixed with each bonding pad of the inner ceramic sheet according to the driving circuit.

The application also provides a miniaturized heavy-load solid-state relay, which comprises a tube shell, inner ceramic chips and a driving circuit, wherein the driving circuit comprises a light-emitting diode D1, a switch diode D4, a photovoltaic V1, a triode Q1, a capacitor C1, an MOS chip V2 and a resistor R1, the light-emitting diode D1 is connected with an input power supply to provide a light driving signal for the photovoltaic V1, the output positive electrode of a photovoltaic V1 is connected with the source electrode of the MOS chip V2, the drain electrode of the MOS chip V2 is connected with the positive electrode of the switch diode D4, the capacitor C1 is connected between the negative electrode of the switch diode D4 and the source electrode of the MOS chip V2 in parallel, the negative electrode of the switch diode D4 is connected with the collector electrode of the triode Q1, the base electrode of the triode Q1 is connected with the output negative electrode of the photovoltaic V1, and a resistor R1 is connected between the gate electrode of the MOS chip V2 and the emitter electrode of the triode Q1 in series; the light emitting diode D1, the diode switch D4, the photovoltaic V1, the triode Q1, the capacitor C1, the MOS chip V2 and the resistor R1 are all patch-shaped structures and are electrically connected through bonding contact, the light emitting diode D1, the diode switch D4, the photovoltaic V1, the MOS chip V2 and the triode Q1 are bare chips, a plurality of electrode pads are respectively arranged on the tube shell and the inner ceramic chip, the diode switch D4, the photovoltaic V1, the MOS chip V2, the triode Q1, the capacitor C1 and the resistor R1 are respectively and fixedly attached to each electrode pad of the tube shell, the light emitting diode D1 is fixedly attached to the electrode pad of the inner ceramic chip, the inner ceramic chip is buckled on the tube shell, and the light emitting diode D1 is aligned with the photovoltaic V1. When the circuit is switched on, the triode Q1, the capacitor C1 and the switch diode D4 form an amplifying and charging circuit, under the condition that the intensity of an optical signal is not changed, the output load of the MOS chip V2 is improved, the size of a driving circuit is reduced by a bare chip structure, and a guarantee is provided for realizing a relay with small size and large load.

The light emitting diode D1 is connected in series with a switch diode D2.

A switch diode D3 is connected in parallel between the base electrode and the emitter electrode of the triode Q1, the anode of the switch diode D3 is connected with the emitter electrode of the triode Q1, the cathode of the switch diode D3 is connected with the base electrode of the triode Q1, and the switch diode D3 is of a patch-shaped structure and is fixed on an electrode pad of the tube shell. The switch diode D3 and the photovoltaic V1 form a bleeder circuit, when the circuit is turned off, the switch diode D3 and the photovoltaic V1 form the bleeder circuit, and charges on the junction capacitor of the MOS chip V2 which is consumed quickly are discharged quickly, so that the product is turned off quickly.

The capacitor C1 is a ceramic dielectric capacitor, and the capacitance value of the capacitor C1 is an order of magnitude larger than the junction capacitance of the MOS chip V2.

The resistor R1 is a chip resistor.

The LED bulb further comprises an MOS chip V3, a resistor R2 and a switch diode D5, wherein the source electrode of the MOS chip V3 is connected with the output positive electrode of the photovoltaic V1, a resistor R2 is connected in series between the grid electrode of the MOS chip V3 and the emitter electrode of the triode Q1, the drain electrode of the MOS chip V3 is connected with the positive electrode of the switch diode D5, the negative electrode of the switch diode D5 is connected with the collector electrode of the triode Q1, the MOS chip V3, the resistor R2 and the switch diode D5 are all of patch-shaped structures and are electrically connected through bonding contact, and the MOS chip V3, the resistor R2 and the switch diode D5 are fixedly attached to electrode pads of the bulb respectively.

The resistor R2 is a chip resistor.

The invention has the beneficial effects that:

compared with the prior art, the solid-state relay has the advantages that the overall size of the solid-state relay is miniaturized by adopting a surface mount type component and bare chip assembly and circuit design and structure design; fill bleeder circuit fast through the design, when reducing the product volume, improve the relay driving force to realize the solid-state relay of small bulky load, satisfy and equip miniaturized, lightweight development demand.

Drawings

FIG. 1 is a schematic diagram of a driving circuit according to the present invention;

fig. 2 is a schematic diagram of the internal structure of the solid-state relay in the present invention;

FIG. 3 is a schematic view of the construction of the cartridge assembly of the present invention;

FIG. 4 is a schematic view of the construction of the cartridge of the present invention;

FIG. 5 is a flow chart of the assembly of the cartridge assembly of the present invention;

FIG. 6 is a schematic diagram of the structure of the diode assembly of the present invention;

FIG. 7 is a schematic structural view of an inner tile of the present invention;

fig. 8 is a flow chart of the assembly of the diode pack of the present invention.

Detailed Description

The technical solution of the present invention is further described below, but the scope of the claimed invention is not limited to the described.

A manufacturing method of a miniaturized heavy-load solid-state relay comprises the following steps:

the method comprises the following steps: electrodes are arranged on the tube shell and the inner ceramic chip according to the driving circuit in a partition mode, and the electrodes are metalized to form a bonding pad; photovoltaic V1, MOS chips V2 and V3, a light emitting diode D1, diode switches D2, D3, D4 and D5, a triode Q1, resistors R1 and R2 and a capacitor C1 are processed into a patch shape, the light emitting diode D1, the diode switches D2, D3, D4 and D5, the photovoltaic V1, the MOS chips V2 and V3 and the triode Q1 are all bare chips, and the resistors R1 and R2 are chip resistors;

step two: assembling by adopting a micro-assembly process, placing a photovoltaic V1, MOS chips V2 and V3, diode switches D3, D4 and D5, a triode Q1, resistors R1 and R2 and a capacitor C1 on each bonding pad of a tube shell, connecting each component according to the connection relation of a driving circuit in a bonding contact mode, and fixing by using epoxy conductive adhesive;

step three: placing the light emitting diode D1 and the diode switch D2 on each bonding pad of the inner ceramic chip, connecting the light emitting diode D1 and the diode switch D2 according to the connection relationship of a driving circuit in a bonding contact mode, and fixing the light emitting diode D1 and the diode switch D2 through epoxy conductive adhesive;

step four: and buckling the inner ceramic chip on the tube shell to enable the light emitting part of the light emitting diode D1 to be aligned with the photovoltaic V1, and finally carrying out parallel sealing and welding process to package the light emitting diode D1 into a whole.

In the second step, the bonding surfaces of the positive electrode and the negative electrode of the photovoltaic V1 are arranged on the same side; the positive and negative electrodes of the diode switches D3, D4 and D5 are respectively arranged on the positive and negative surfaces; bonding surfaces of the positive electrode and the negative electrode of the resistors R1 and R2 are arranged on the same side; the bonding surface of the base electrode and the emitting electrode of the triode Q1 is arranged on the front surface, and the bonding surface of the collector electrode is arranged on the back surface; the front sides of the MOS chips V2 and V3 are set as bonding surfaces of the source electrodes, a small area is divided on the front sides and set as a bonding surface of the grid electrode, and the back sides are the bonding surfaces of the drain electrodes; the non-bonding surface of the photovoltaic V1, the negative electrodes of the diode switches D3, D4 and D5, the non-bonding surface of the resistors R1 and R2, the collector of the triode Q1 and the drain electrodes of the MOS chips V2 and V3 are respectively attached and fixed with each bonding pad of the package according to a driving circuit.

In the third step, the positive electrode and the negative electrode of the light-emitting diode D1 and the diode switch D2 are respectively arranged on the positive surface and the negative surface; the cathode of the light emitting diode D1 and the cathode of the diode switch D2 are respectively attached and fixed with each bonding pad of the inner ceramic sheet according to the driving circuit.

The miniaturized large-load solid-state relay comprises a tube shell, inner ceramic chips and a driving circuit, wherein the driving circuit comprises a light emitting diode D1, a switch diode D4, a photovoltaic V1, a triode Q1, a capacitor C1, an MOS chip V2 and a resistor R1, the light emitting diode D1 is connected with an input power supply to provide a light driving signal for the photovoltaic V1, the output positive electrode of a photovoltaic V1 is connected with the source electrode of the MOS chip V2, the drain electrode of the MOS chip V2 is connected with the positive electrode of the switch diode D4, a capacitor C1 is connected in parallel between the negative electrode of the switch diode D4 and the source electrode of the MOS chip V2, the negative electrode of the switch diode D4 is connected with the collector electrode of the triode Q1, the base electrode of the triode Q1 is connected with the output negative electrode of the photovoltaic V1, and a resistor R1 is connected in series between the gate electrode of the MOS chip V2 and the emitter electrode of the triode Q1; the light emitting diode D1, the diode switch D4, the photovoltaic V1, the triode Q1, the capacitor C1, the MOS chip V2 and the resistor R1 are all patch-shaped structures and are electrically connected through bonding contact, the light emitting diode D1, the diode switch D4, the photovoltaic V1, the MOS chip V2 and the triode Q1 are bare chips, a plurality of electrode pads are respectively arranged on the tube shell and the inner ceramic chip, the diode switch D4, the photovoltaic V1, the MOS chip V2, the triode Q1, the capacitor C1 and the resistor R1 are respectively and fixedly attached to each electrode pad of the tube shell, the light emitting diode D1 is fixedly attached to the electrode pad of the inner ceramic chip, the inner ceramic chip is buckled on the tube shell, and the light emitting diode D1 is aligned with the photovoltaic V1.

The light emitting diode D1 is connected in series with a switch diode D2.

A switch diode D3 is connected in parallel between the base electrode and the emitter electrode of the triode Q1, the anode of the switch diode D3 is connected with the emitter electrode of the triode Q1, the cathode of the switch diode D3 is connected with the base electrode of the triode Q1, and the switch diode D3 is of a patch-shaped structure and is fixed on an electrode pad of the tube shell.

The capacitor C1 is a ceramic dielectric capacitor, and the capacitance value of the capacitor C1 is an order of magnitude larger than the junction capacitance of the MOS chip V2.

The resistor R1 is a chip resistor.

The LED bulb further comprises an MOS chip V3, a resistor R2 and a switch diode D5, wherein the source electrode of the MOS chip V3 is connected with the output positive electrode of the photovoltaic V1, a resistor R2 is connected in series between the grid electrode of the MOS chip V3 and the emitter electrode of the triode Q1, the drain electrode of the MOS chip V3 is connected with the positive electrode of the switch diode D5, the negative electrode of the switch diode D5 is connected with the collector electrode of the triode Q1, the MOS chip V3, the resistor R2 and the switch diode D5 are all of patch-shaped structures and are electrically connected through bonding contact, and the MOS chip V3, the resistor R2 and the switch diode D5 are fixedly attached to electrode pads of the bulb respectively.

The resistor R2 is a chip resistor.

Examples

A solid-state relay is provided, in order to realize fast on-off and improve driving capability, a driving circuit of the solid-state relay is shown in figure 1, and the solid-state relay is composed of a light emitting diode D1, a switching diode D1, a capacitor C1, a resistor R1, a transistor V1 and a transistor V1, wherein the light emitting diode D1 is connected with an input power supply to provide light driving signals for the photovoltaic V1, an output anode of the photovoltaic V1 is connected with a source of the MOS chip V1, a drain of the MOS chip V1 is connected with an anode of the switching diode D1, the capacitor C1 is connected in parallel between a cathode of the switching diode D1 and the source of the MOS chip V1, a cathode of the switching diode D1 is connected with a collector of the transistor Q1, a base of the transistor Q1 is connected with an output cathode of the photovoltaic V1, a gate of the MOS chip V1 is connected with an emitter of the MOS chip V1 in series, and a gate of the transistor R1 are connected with the transistor R1 in series between the gate of the transistor V1, and the transistor V1, the drain electrode of the MOS chip V3 is connected with the positive electrode of a switch diode D5, the negative electrode of the switch diode D5 is connected with the collector electrode of a triode Q1, a switch diode D3 is connected between the base electrode and the emitter electrode of the triode Q1 in parallel, the positive electrode of a switch diode D3 is connected with the emitter electrode of the triode Q1, and the negative electrode of the switch diode D3 is connected with the base electrode of a triode Q1.

The light-emitting diode D1 and the photovoltaic V1 form a driving control circuit and are isolated by light; the triode Q1, the capacitor C1, the switch diode D4 and the switch diode D5 form an amplifying charging circuit; the switch diode D3 and the photovoltaic V1 form a bleeder circuit; the MOS chips V2 and V3 form a switch circuit.

The light emitting diode D1, the diode switches D2, D3, D4 and D5, the photovoltaic V1, the MOS chips V2 and V3 and the triode Q1 are all bare chips.

The capacitor C1 is a ceramic dielectric capacitor, and the capacitance value of the capacitor C1 is an order of magnitude larger than the junction capacitance of the MOS chip V2.

The resistors R1 and R2 are chip resistors.

The light emitting diode D1 is connected in series with a switch diode D2.

In order to realize the circuit structure layout, the internal package of the solid-state relay is as shown in fig. 2, 3 and 6, and further includes a tube shell and an inner ceramic chip, a light emitting diode D1, a diode switch D2, D3, D4 and D5, a photovoltaic V1, a triode Q1, a capacitor C1, MOS chips V2 and V3 and resistors R1 and R2 in the driving circuit are all patch-like structures and are electrically connected through bonding contact, the diode switches D3, D4 and D5, the photovoltaic V1, the triode Q1, the capacitor C1, the MOS chips V2 and V3 and the resistors R1 and R2 are respectively and fixedly attached to electrode pads of the tube shell, the light emitting diode D1 and the diode switch D2 are respectively and fixedly attached to electrode pads of the inner ceramic chip, the inner ceramic chip is attached to the inner ceramic chip, and the light emitting diode D1 is aligned with the photovoltaic V1.

The product drive circuit is very small in volume and strong in drive capability. The relay is produced by adopting a micro-assembly process. The components are bonded by epoxy conductive adhesive, the components are interconnected by a bonding process, and finally, the components are packaged by a parallel sealing and welding process.

The assembly process comprises the following steps:

the method comprises the following steps: electrodes are arranged on the tube shell and the inner ceramic chip in a partition mode according to the driving circuit, the electrodes are metalized to form a bonding pad, the structure of the tube shell is shown in figure 4, and the structure of the inner ceramic chip is shown in figure 7; photovoltaic V1, MOS chips V2 and V3, a light emitting diode D1, diode switches D2, D3, D4 and D5, a triode Q1, resistors R1 and R2 and a capacitor C1 are processed into a patch shape, the light emitting diode D1, the diode switches D2, D3, D4 and D5, the photovoltaic V1, the MOS chips V2 and V3 and the triode Q1 are all bare chips, and the resistors R1 and R2 are chip resistors;

bonding surfaces of a positive electrode and a negative electrode of the photovoltaic V1 are arranged on the same side; the positive and negative electrodes of the light-emitting diode D1 and the diode switches D2, D3, D4 and D5 are respectively arranged on the front and back surfaces; bonding surfaces of the positive electrode and the negative electrode of the resistors R1 and R2 are arranged on the same side; the bonding surface of the base electrode and the emitting electrode of the triode Q1 is arranged on the front surface, and the bonding surface of the collector electrode is arranged on the back surface; the front sides of the MOS chips V2 and V3 are set as bonding surfaces of the source electrodes, a small area is divided on the front sides and set as a bonding surface of the grid electrode, and the back sides are the bonding surfaces of the drain electrodes;

step two: assembling by adopting a micro-assembly process, placing a photovoltaic V1, MOS chips V2 and V3, diode switches D3, D4 and D5, a triode Q1, resistors R1 and R2 and a capacitor C1 on each bonding pad of a tube shell, connecting each component according to the connection relation of a driving circuit in a bonding contact mode, and fixing by epoxy conductive adhesive to obtain a tube shell assembly, as shown in figure 4;

step three: placing the light emitting diode D1 and the diode switch D2 on each pad of the inner ceramic chip, connecting the light emitting diode D1 and the diode switch D2 in a bonding contact manner according to the connection relationship of the driving circuit, and fixing by epoxy conductive adhesive to obtain a diode assembly, as shown in fig. 6;

step four: and buckling the inner ceramic chip on the tube shell to enable the light emitting part of the light emitting diode D1 to be aligned with the photovoltaic V1, and finally carrying out parallel sealing and welding process to package the light emitting diode D1 into a whole.

The working principle is as follows:

when the LED is switched on, the light emitting diode emits light D1, light signals are transmitted to the photovoltaic V1 and converted into electric signals to drive the triode Q1, and small signals are amplified, so that the injection current of the grid electrodes of the MOS chips V2 and V3 is increased, the driving capacity of the MOS chips is improved, and the current can reach several milliamperes or even hundreds of milliamperes. When the MOS chips V2 and V3 are turned on, a current is supplied from the capacitor C1, and the capacitance value of the capacitor C1 is an order of magnitude larger than the junction capacitance of the MOS chips V2 and V3.

When the LED D1 is turned off, the current of the LED D1 is lost, the photovoltaic V1 loses an electric signal, and the triode Q1 is turned off, at the moment, the grids of the MOS chips V2 and V3 return to the sources of the MOS chips V2 and V3 through the switch diode D3 and the photovoltaic V1 to form a loop, and the V1 has a quick release function, so that charges on the junction capacitors of the MOS chips V2 and V3 are quickly discharged, and the product is quickly turned off.

The invention provides a manufacturing method of a miniaturized heavy-load solid-state relay, which adopts a surface mount component and bare chip assembly, and circuit design and structural design to miniaturize the whole volume of the solid-state relay; fill bleeder circuit fast through the design, when reducing the product volume, improve the relay driving force to realize the solid-state relay of small bulky load, satisfy and equip miniaturized, lightweight development demand.