阅读说明：本技术 重读页面数据方法 (Read page data method again ) 是由 洪英峻 于 2018-06-14 设计创作，主要内容包括：一种重读页面数据方法。所述重读页面数据方法可以根据有关读取目标页面的环境参数,来选择用以从适合的重试类型的多个重试表中以重新读取所述目标页面,因此降低了重复读取所述目标页面的次数,并且防止因频繁读取所造成的读取干扰。(A kind of stressed page data method.The stressed page data method can be according to the environmental parameter in relation to reading target pages, to select to retry in table from suitable the multiple of type that retry to re-read the target pages, therefore reducing repetition reads the number of the target pages, and prevents because of the reading interference caused by frequently reading.)

1. a kind of stressed page data method, is implemented in a data storage device, which is characterized in that the data storage device Including a nonvolatile memory and a controller, the nonvolatile memory includes multiple blocks (Blocks), and each The block includes multiple pages (Pages), and the stressed page data method includes:

The controller is enabled to read the data that a target pages of a target block are stored, wherein the target block is described One of block, and the target pages are then with respect to one of the page for the target block；

The controller is enabled to judge whether that the data that the target pages are stored can be obtained；

If judgement when cannot obtain the data that the target pages are stored, enable the controller according to an at least environmental parameter and Choose it is multiple retry one of type, then retried described in selecting from multiple retry in table for retrying type described in selection One of table wherein each table that retries further includes an index value, and records at least one and reads parameter；And

Enable the controller using the selected reading parameter for retrying table to re-read the target pages institute The data of storage, and return to and the controller is enabled to judge whether the step of capable of obtaining the data that the target pages are stored In.

2. stressed page data method as described in claim 1, which is characterized in that further include:

If judgement can obtain the data that the target pages are stored, the controller is enabled to terminate the stressed page data side Method.

3. stressed page data method as claimed in claim 2, which is characterized in that further include:

When the controller is to obtain the target pages institute using the selected reading parameter for retrying table When the data of storage, then the index for retrying table retried in type of the controller rearrangement selection is enabled Value.

4. stressed page data method as claimed in claim 2, which is characterized in that from the institute for retrying type described in selection It states in the step of retrying in table and retrying one of table described in selecting, further includes and record the selected index for retrying table Value.

5. stressed page data method as described in claim 1, which is characterized in that from the institute for retrying type described in selection It states in the step of retrying in table and retrying one of table described in selecting, the controller is the index value that table is retried according to described in And it sequentially selects described to retry one of table or the controller is to be randomly chosen described to retry one of table.

6. stressed page data method as claimed in claim 4, which is characterized in that from the institute for retrying type described in selection It states in the step of retrying in table and retrying one of table described in selecting, the controller is selected according to the index value recorded One of table is retried described in selecting.

7. stressed page data method as described in claim 1, which is characterized in that the target block or the target pages It is to be determined as specified by a data read command, or according to the data read command and a logic to physical address mapping table It is fixed, wherein the data read command is to be sent in the data storage device by a host, and the logic is to physics Address mapping table is stored in the data storage device, and is temporarily stored into the one of the data storage device or the host easily In the property lost memory.

8. stressed page data method as described in claim 1, which is characterized in that the controller is being enabled to read the target In the step of data that the page is stored, the controller is to correct the read page object using an error correcting code The error in data in face, and when judgement cannot obtain the data that the target pages are stored, then it represents that the error in data Bit number be more than the upper limit value that can correct of the error correcting code.

9. stressed page data method as described in claim 1, which is characterized in that the data storage device is using described Controller, respectively by it is each it is described retry table, be classified to and described retry one of type, and an at least environmental parameter Then refer to that a temperature value, a programming time, one are written/erase number and/or a reading times.

Technical field

The present invention relates to a kind of stressed page data methods, more particularly to one kind can be according to the environment in relation to reading the page Parameter, to select to re-read the side of the page in table (retry tables) from suitable multiple retry for retrying type Method.

Background technique

Nonvolatile memory is a kind of data storage medium, has and is not required to additional power maintenance information, rapid data The abilities such as reading and antidetonation, therefore be widely used in memory card, solid state hard disk (SSD) and portable multimedia device. In general, nonvolatile memory, such as the storage array of flash memory (Flash Memory) includes multiple blocks (Blocks), And each block includes multiple pages (Pages) again, and it is usually the minimum unit for programming (Program) that the page, which is,.Namely It says, the minimum unit when page is write-in or reading data.When reading the data of a certain page, data storage device can basis The data for reading parameter to read the page of default, and decoded operation is carried out for the data of the read page.

However, even if above-mentioned decoded operation is able to carry out error correction (Error Correction), but it corrects ability But still there is the upper limit.Therefore, once discovery can not carry out effective error correction by decoded operation come the data to the read page When, i.e. decoding result is more than the mistake above to a certain degree, and data storage device sequentially will retry each of table according to multiple Person, to re-read the data of (Re-read) page using its different reading parameter, and it is described until can be read Data of the page and not occurring can not right the wrong until (Uncorrectable Error).In this way, which this is for having more It is multiple retry table for, data storage device may need to that more time is spent suitably to retry table to find out so that In the reading times also just opposite promotion of the page, and then it be easy to cause the hair of reading interference (Read Disturbance) It is raw.

Summary of the invention

In view of this, it is an object of the invention to propose that one kind can be according to the environmental parameter in relation to reading the page, to select It selects to retry retrying for table to improve from the suitable multiple methods retried in table to re-read the page for retrying type Hit rate (Retry Hit Rate), and at the same time preventing because of the reading interference caused by frequently reading.

In order to achieve the above object, the embodiment of the present invention provides a kind of stressed page data method, it can be performed and stored in a data In device.This data storage device includes nonvolatile memory and controller, and nonvolatile memory includes multiple blocks, and Each block includes multiple pages, and the stressed page data method then includes the following steps.Firstly, controller is enabled to read a mesh The data that one target pages of mark block are stored.Wherein, this target block is one of these blocks, and this page object Face is then with respect to one of these pages of target block thus.Secondly, controller is enabled to judge whether that this page object can be obtained The data that face is stored.If judgement cannot obtain the data that this target pages is stored, enable controller according to an at least environment Parameter and choose it is multiple retry one of type, then select these heavy from multiple retry in table for retrying type of selection One of take temperature.Wherein, each table that retries further includes an index value, and records at least one and read parameter.Then, controller is enabled to make With the selected reading parameter for retrying table to re-read the data that this target pages is stored, and returns to and enable controller Judge whether in the step of capable of obtaining the data that this target pages is stored.

Be further understood that feature and technology contents of the invention to be enabled, please refer to below in connection with it is of the invention specifically Bright and attached drawing, but these explanations are merely illustrative the present invention with attached drawing, rather than interest field of the invention is appointed What limitation.

Detailed description of the invention

Fig. 1 is the function block schematic diagram of data storage device provided by the embodiment of the present invention.

Fig. 2 is the schematic diagram of the nonvolatile memory in the data storage device of Fig. 1.

Fig. 3 A is the distribution schematic diagram that the data storage device of Fig. 1 operates in the critical voltage under single layer memory cell mode.

Fig. 3 B is the distribution schematic diagram that the data storage device of Fig. 1 operates in the critical voltage under multilayer memory cell mode.

Fig. 4 is the flow diagram for reading page data method provided by the embodiment of the present invention again.

Fig. 5 A is to retry schematic diagram of the table under a preferred embodiment in the stressed page data method of Fig. 4.

Fig. 5 B is to retry schematic diagram of the table under another preferred embodiment in the stressed page data method of Fig. 4.

Fig. 5 C is to retry schematic diagram of the table under another preferred embodiment in the stressed page data method of Fig. 4.

Fig. 5 D is to retry schematic diagram of the table under another preferred embodiment in the stressed page data method of Fig. 4.

Specific embodiment

It hereinafter, will be by Detailed description of the invention various embodiments of the present invention come the present invention is described in detail.However, of the invention Concept may embody in many different forms, and should not be construed as limited by exemplary embodiments set forth herein.In addition, Same reference numbers can be used to indicate similar component in the accompanying drawings.

Firstly, referring to Fig. 1, Fig. 1 is the function block schematic diagram of data storage device provided by the embodiment of the present invention. Data storage device 1 includes nonvolatile memory 110 and controller 120.Wherein, controller 120 is electrically coupled to non-easy The property lost memory 110, and the data access to control nonvolatile memory 110.In the present embodiment, non-volatile memories Device 110 can be for example to be realized with flash memory, but the present invention is not limited thereto system.In addition, it is to be understood that data store Device 1 is usually the write-in/reading order that can be used together with host 2, and be assigned according to host 2, to write data into Data are read into nonvolatile memory 110, or from nonvolatile memory 110.Therefore, in the present embodiment, control Device 120 processed be may be, for example, Memory Controller Hub, and it mainly includes interface logic 122, microprocessor 124 and control logic 126, But the present invention is also not limited system.Microprocessor 124 is electrically coupled to interface logic 122 and control logic 126, and to Write-in/the reading order assigned by interface logic 122 received from host 2, and accessed by control logic 126 non- Data in volatile memory 110.

Then, referring to Figure 2 together, Fig. 2 is the schematic diagram of the nonvolatile memory in the data storage device of Fig. 1. Nonvolatile memory 110 includes mainly multiple blocks, such as block B0 to block BZ, and each block includes multiple pages again Face, such as page P0 to page PN.In the present embodiment, block is that data smear the minimum unit write, and the page is data write-in Or the minimum unit read, but the present invention is not limited thereto.It should be noted that above-mentioned Z and N may be, for example, any just whole Number, but the present invention does not limit the specific implementation of its numerical value yet, and the usually intellectual of having should can be according to reality in the art Border demand or application are to carry out relevant design.

In addition, either block, such as block B0 can remember for single layer memory cell (Single-Level Cell, SLC), multilayer Recall born of the same parents (Multi-Level Cell, MLC), three layers of memory cell (Triple-Level Cell, TLC) or four layers of memory cell (Quad-level cell, QLC) block, and above-mentioned each memory cell can store the data of 1,2,3 or 4 bit respectively.And or Person is that block B0 can also be divided into single layer memory cell mode or default mode according to different modes of operation, wherein in default mode Under, block B0 can provide maximum data storage capacities, and under single layer memory cell mode, block B0 then can provide optimal Data access capabilities.

Assuming that block B0 is single layer memory cell block or operation under single layer memory cell mode, in the distribution of its critical voltage In schematic diagram, information state 301 and 302 is respectively corresponding to bit " 1 " and bit " 0 ", as shown in Figure 3A.Therefore, when will be from Any page of block B0, such as in the page P0 when reading data, the internal circuit of controller 120 or block B0 just need to provide Voltage Vth0 is read to read the bit value that memory cell is stored.It reads voltage Vth0 if providing and memory cell is connected, then It is determined as information state 301, also mean that the memory cell stored is bit " 1 "；If reading voltage on the contrary, providing Vth0 but memory cell is not connected, is then determined as information state 302, also mean that the memory cell stored is bit " 0 ".

Likewise, it is assumed that block B0 is multilayer memory cell block, and in the distribution schematic diagram of its critical voltage, information state 401,402,403 and 404 it is respectively corresponding to bit " 11 ", bit " 10 ", bit " 01 " and bit " 00 ", as shown in Figure 3B. Therefore, when to read data from any page of block B0, such as in page P0, the inside electricity of controller 120 or block B0 Road just need to provide read voltage Vth1~Vth3 come bit value that recognition memory born of the same parents are stored be " 11 ", " 10 ", " 01 " or "00".It should be noted that in other embodiments, block B0 can also be three layers of memory cell or four layers of memory cell block, and this When controller 120 or the internal circuit of block B0 then need to provide more kinds of bits for being stored with recognition memory born of the same parents of reading voltages Value.To sum up, the schematic diagram of Fig. 3 A and Fig. 3 B are merely citing herein, it is not intended to limiting the invention.In addition, due to mentioning For reading voltage, the operation principles for the bit value that recognition memory born of the same parents are stored have been to have usually intellectual in the art It is known, therefore the thin portion content in relation to providing reading voltage is just no longer added to repeat herein.

However, because of certain factors, such as data are long placed in, memory cell consume and high/low temperature interference etc. will lead to critical voltage Distributions shift, i.e., information state 301~302 and information state 401~404 deviate respectively as information state 301 '~302 ' and Information state 401 '~404 '.Offset generate after using read voltage Vth0 or read voltage Vth1~Vth3 all will likely can not Correctly identify the bit value that memory cell is stored.As described in previous contents, controller 120 will do it decoded operation at this time Attempt the error in data of the read page of corrigendum.Once it was found that can not the error in data to the read page effectively corrected When, controller 120, which just will start, re-reads program, i.e., sequentially uses different readings according to multiple each for retrying table Parameter is taken to re-read the data of the page, until the error in data of the read page can be corrected.Therefore, at this In embodiment, different reading parameters can be for example different reading voltage, but the present invention is not limited system.Because In other embodiments, different reading parameters, which also can be for example, refers to different error correcting code (Error Correction Code, ECC) or different error correction mode, so the usually intellectual of having should can be according to actual demand in the art Or application is to carry out relevant design.

Assuming that the data storage device 1 of the present embodiment is built-in retry table containing 50 in the case where, such as retry table T (0) to table T (49) are retried, also mean that each table T (0)~T (49) that retries includes different reading voltage Vth0~Vth3.And In conventional practice, controller 120 be can first using the reading voltage Vth0 (0) that retries table T (0) or read voltage Vth1 (0)~ Vth3 (0) is to re-read the data of the page.If using the reading voltage Vth0 (0) for retrying table T (0) or reading voltage Vth1 (0)~Vth3 (0) and when still can not effectively correct the error in data of the read page, controller 120 will continue to Using the reading voltage Vth0 (1) for retrying table T (1) or voltage Vth1 (1)~Vth3 (1) is read to re-read the page Data, and so on, until with the reading voltage Vth0 (i) that retries table T (i) or read voltage Vth1 (i)~Vth3 (i) can Until reading the data of the page and not occurring not righting the wrong.That is, because conventional practice can only be according to retrying The set sequence of table T (0)~T (49) and repeat reading, so in this case, if the number for retrying table is got over More, controller 120 also may need to the data for spending the more long time that could correctly read (corrigendum) page, that is, find out Suitably retry table T (i).It should be understood that in the present embodiment, i is then 0 to 49 integer of appointing, but the present invention not with This is limitation.

To solve the above-mentioned problems, each table T (0)~T (49) that retries is categorized into its multiple for retrying type by the present invention One of, and when starting re-reads program, controller 120 can first be chosen according to environmental parameter to type is retried, Table is retried from the selection one in type that retries of selection again, and re-reads the page according to this reading parameter for retrying table Data, retry table T (0)~T (49) to improve and retry hit rate.As an example it is assumed that environmental parameter is temperature value, weight Take temperature T (0)~T (09) and retry table T (10)~T (19) then record respectively low temperature (for example, lower than 15 degree) and high temperature (for example, Higher than 45 degree) it is read out under environment and reads parameter used in the page, wherein temperature value can be by the temperature of data storage device 1 Degree sensor (not being painted) is provided by host side, but the present invention is neither as limitation.In addition, it is assumed that environmental parameter is to compile The journey time retries table T (20)~T (29) and then records the legacy data for reading the page (for example, page data programmed time or area Closing (Closed) time of block B0 is more than 24 hours) used in read parameter.Furthermore, it is assumed that environmental parameter be write-in/ Erase number (Program/Erase Count), retries table T (30)~T (39) then record be read as height be written/number of erasing Parameter is read used in (for example, being written/erase number greater than 1,000) page.Finally, it is assumed that environmental parameter is reading time Number, retries table T (40)~T (49) and then record and be read as high (for example, reading times are greater than 10, the 000) page that frequently reads and made Reading parameter.

In general, when the data of programmed page, controller 120 can will indicate the time stamp of programming time (Timestamp) and at present the parameters such as temperature are write in the idle area (Spare Area) of the page, finally again by earliest time stamp, Highest low temperature value indicates that closing information (the End of Block of block B0 is recorded in the time stamp (Timestamp) of current time Information, EOB Info) in, normally closed information is recorded in the last one page of block B0.Therefore, from above-mentioned interior Hold it is found that the present embodiment, which will can define five, retries type, and retries table T (0)~T for above-mentioned using controller 120 (09), table T (10)~T (19) is retried, table T (20)~T (29) is retried, retry table T (30)~T (39) and retries table T (40)~T (49) be categorized into respectively this five retry in type first, second, third, fourth and fifth retry type, as shown in Figure 5A.

It classified each retry table T (0)~T (49) it should be noted that above-mentioned and retries the specific of one of type to multiple Implementation is all merely herein citing, and it is not intended to limiting the invention.In addition, in the present embodiment, it is each to retry table T (0)~T (49) more may include an index value, i.e. priority valve, and smaller index value also means that there is higher priority Sequence, but the present invention is also not limited system.To sum up, the present invention is not intended to limit the specific implementation of these index values, this Relevant design should can be carried out according to actual demand or application by having usually intellectual in technical field.Then, please refer to Fig. 4, Fig. 4 are then the flow diagrams for reading page data method provided by the embodiment of the present invention again.Wherein, it should be understood that Be, the stressed page data method of Fig. 4 be can be implemented in the data storage device 1 of Fig. 1, but the present invention also it is unlimited drawing 4 Stressed page data method can only be implemented in the data storage device 1 of Fig. 1.

As shown in figure 4, firstly, enabling the target pages of the reading target block of controller 120 be stored in step S410 Data.Wherein, target block is one of block B0 to block BZ, and target pages are then with respect to the page for target block One of face P0 to page PN, and it should be understood that target block or target pages are by data read command It is specified, or according to data read command and logic to physical address mapping table (Logical Address to Physical Address Mapping Table) determined, and data read command be by the be sent to data storage device 1 of host 2, And logic to physical address mapping table is stored in data storage device 1, and is temporarily stored into data storage device 1 or host 2 In volatile memory (not shown).

Secondly, in the step s 420, controller 120 is enabled to judge whether that the data that target pages are stored can be obtained, if It is to then follow the steps S460, that is, terminates the stressed page data method of the present embodiment；If not, thening follow the steps S430.It is necessary It is appreciated that, after the data that reading (or re-reading) target pages are stored, controller 120 can correct read mesh automatically The error in data of the page is marked, such as: controller 120 corrects the error in data of read target pages using error correcting code. If the bit number of error in data is more than the upper limit value that error correcting code can be corrected, such as: 120 bits/1024 bytes are then controlled Device 120 processed can not correct the error in data of read target pages using error correcting code, also mean that controller 120 can not Obtain the data that target pages are stored.

Then, in step S430, controller 120 is enabled to choose its multiple for retrying type according to an at least environmental parameter One of, then select these to retry one of table from multiple retry in table for retrying type of selection.Wherein, each to retry table note Parameter is read in record at least one, and controller 120 preferably selects one of them to retry table according to index value.In addition, index value Initial value can be different according to type is retried, for example, first retry type initial value be 0, second retry type initial value be 10, and so on, but the present invention is neither as limitation.Assuming that it is 65 degree, when programming that environmental parameter, which is respectively current temperature value, The spacing current time is 5 hours, and being written/erase number is 100, and reading times are 2000, and therefore, controller 120 can foundation Temperature value and choose second and retry type, that is, include retry table T (10)~T (19), and from second retry type retry table T (10) it in~T (19) and sequentially or is randomly chosen one of them and retries table, such as retry table T (10)；Alternatively, controller 120 Then according to specific index value, such as 12, and select second retry type retry table T (12).

Then, in step S440, enable controller 120 using the selected reading parameter for retrying table to re-read mesh The data that the mark page is stored.Assuming that the selected table that retries is attached most importance to take temperature T (12), then 120 use of controller is enabled to retry table T (12) the reading parameter recorded returns to step S420 to re-read the data that target pages are stored, and enables control Device 120 judges whether that the data that target pages are stored can be obtained.

In another embodiment, step S430 is further included: recording the selected index value for retrying table.For example, it is assumed that control The selection in table T (10)~T (19) that retries that device 120 processed retries type from second retries table T (13), then will retry table T's (13) Index value is recorded.In this way, which target at this time can be obtained using the reading parameter for retrying table T (13) in controller 120 After the data that the page is stored, other target pages (or other target pages of other target blocks) and held when changing into read When row arrives step S430, controller 120 according to this specific index value recorded will retry the selection of (13) table T, Or sequentially or randomly choose it is another retry table, then execute step S440.

In addition, in the present embodiment, reading page data method again more may include step S450.In step S450, work as control Device 120 processed be using the selected reading parameter for retrying table and when can obtain the data that target pages are stored have by Step S430~S440 and the judging result of step S420 returned are the weight for then enabling the rearrangement of controller 120 choose when being These in examination type retry these index values of table.For example, it is assumed that controller 120 from second retry type retry table T (10) selection retries table T (13) in~T (19), and when controller 120 can obtain mesh using the reading parameter for retrying table T (13) When the data that the mark page is stored, then the index value for retrying table T (13) is set as current second and retries index value in type Highest priority picks, i.e. initial value 10, and retry table T (10)~T (12) index value again before table T (13) will be retried Sequence, such as: it will sequentially retry table T (10)~T (12) index value and be changed to 11~13.In this way, read it when changing into His target pages (or other target pages of other target blocks) and when going to step S430, retrying table T (13) will By the first preferential selection.

That is, in the present embodiment, controller 120 preferably according to retry table T (10)~T (19) index value (or Index value after rearrangement) and sequentially reading parameter that table T (10)~T (19) is recorded is retried to re-read using each The data that target pages are stored.By taking Fig. 5 A as an example, if can not still obtain target using the reading parameter for retrying table T (10) When data (or error in data that read target pages can not be corrected) that the page is stored, controller 120 will continue to using Its index value be current second retry in type it is time small retry table, that is, retry table T (11), reading parameter to re-read mesh The data that are stored of the mark page, and so on, it is until each reading parameter for retrying table that second retries type all used Only.If controller 120 using retry table T (15) readings parameter and success obtain the data that target pages are stored when, control It is preferential that the index value for retrying table T (15) is then adjusted to the highest that these retry table T (10)~T (19) index value by device 120 processed Cis-position, i.e. initial value 10, and accordingly have adjusted other and retry table T (10)~T (19) index value, as shown in Figure 5 B.

According to the above known to, it is assumed that controller 120 need to use retry table T (15) reading parameter could success obtain The data that target pages are stored can only be tried one by one to retrying table T (15) compared to conventional practice from table T (0) is retried, and need pair Target pages carry out 16 read action, but the present embodiment only needs to try one by one from table T (10) is retried to retrying table T (15), i.e., the read action to target pages progress 6 times is only needed, therefore, present invention substantially reduces obtain target pages to be deposited Time needed for the data of storage also reduces the number of repetition of read action, and is reduced in turn because of the reading caused by frequently reading Take interference.In addition to this, because under identical working environment, the critical voltage distributions shift of all pages of either block is then very May be same or similar, so the index value for retrying table T (15) most suitable at this time is adjusted to these by the present embodiment retries table T (10) the highest priority picks of the index value of~T (19) retry table T (10)~T (19) and retry hit to effectively improve whereby Rate.

For example, when controller 120 read other target pages (or other target pages of other target blocks) and Occur when can not obtain the data that it is stored again, it is assumed that it is 66 degree that environmental parameter, which is respectively current temperature value, at this time, when programming The spacing current time be 5 hours, be written/erase number be 100, reading times 2500, therefore, controller 120 can again according to Select second to retry one of type according to temperature value and retry table, then, controller 120 just using it is previous be most suitable for and its Index value retries in type the smallest reading parameter for retrying table T (15) for current second to re-read target pages institute at this time The data of storage.However, if can not still obtain the number that target pages are stored at this time using the reading parameter for retrying table T (15) According to when, controller 120 will continue to be using its index value current second retry in type it is time small retry table, that is, retry table T (10), reading parameter to re-read the data that target pages at this time are stored, and so on.If controller 120 uses The reading parameter of table T (16) is retried when success obtains the data that target pages at this time are stored, controller 120 will then retry table The index value of T (16) is adjusted to these highest priority picks for retrying table T (10)~T (19) index value, i.e. initial value 10, and And accordingly have adjusted these and retry the other index values of table T (10)~T (19), as shown in Figure 5 C.

If programming time is 12 hours away from the current time in addition, it is 40 degree that environmental parameter, which is respectively current temperature value, write Entering/erase number is 1200, reading times 5000, when the data that target pages are stored at this time can not be obtained by occurring, In In step S430, controller 120 then can select the 4th to retry these of type and retry table T (30) according to being written/erasing number One of~T (39), such as retry table (30).In step S440, controller 120 just using the reading parameter for retrying table (30) with Re-read the data that target pages are stored.Assuming that using retry the reading parameter of table (30) still can not success obtain page object The data that face is stored, step S420~step S440 will be repeatedly performed, until being joined using the reading for retrying table T (32) After number can success when obtaining the data that target pages are stored, the index value for retrying table T (32) is then adjusted to this by controller 120 The highest priority picks of table T (30)~T (39) index value, i.e. initial value 30 are retried a bit, and it is heavy accordingly to have adjusted other It takes temperature the other index values of T (30)~T (39), as shown in Figure 5 D.

Similarly, if it is 45 degree that environmental parameter, which is respectively current temperature value, and programming time is 36 hours away from the current time, Being written/erase number is 600, reading times 25000, when the data that target pages are stored can not be obtained by occurring, in step In rapid S430, controller 120 can then select third to retry these of type according to programming time and retry table T (20)~T (29) One of, such as retry table (20)；Or it selects the 5th to retry these of type according to reading times and retries table T (40)~T One of (49), such as table T (40) are retried, and foundation retries the reading parameter of table T (20) or T (40) to re-read target pages The data stored.Since elaboration is also as described in previous embodiment, so just no longer adding redundant herein.For total It, because the present embodiment can retry the reading parameter of table according to environmental parameter using difference, and comes again according to result is read Sequence retries the sequence of table, so the present invention, which is able to ascend, retries hit rate, and reduces needed for reading target pages data again Time.

To sum up, if controller 120 according to environmental parameter in addition to that can select one of them to retry class at the beginning One of type retries off-balancesheet, and controller 120 also may be selected one of them and retry the another of type to retry table；Alternatively, when control Device 120 processed can not select one of them to retry one of type according to environmental parameter and retry table, for example, temperature value drops to 45 degree, at this point, controller 120 can also select one of them to retry table according to index value.Then, then step S440 is executed.

In conclusion reading page data method provided by the embodiment of the present invention again, it can be and only need to be read according to related The environmental parameter of target pages is taken to select to retry in table from suitable the multiple of type that retry to re-read the mesh Therefore the mark page thereby reduces repetition and reads the number of the target pages, and prevent because of the reading caused by frequently reading Take interference.Further, since the most suitable table that retries can be also discharged to override cis-position, therefore this by the stressed page data method Invention can also reach opposite promoted and retry hit rate.

The above description is only an embodiment of the present invention, not to limit to the scope of the patents of the invention.