阅读说明：本技术 绝缘栅双极型晶体管及其制造方法 (Insulated gate bipolar transistor and its manufacturing method ) 是由 王学良 *** 郎金荣 闵亚能 于 2018-05-17 设计创作，主要内容包括：本发明公开了一种绝缘栅双极型晶体管及其制造方法,其中绝缘栅双极型晶体管的制造方法,包括以下步骤：从绝缘栅双极型晶体管的衬底的背面向衬底内注入氢离子,或铝离子,或镓离子,以形成反向导通二极管的n型重掺杂层,反向导通二极管为绝缘栅双极型晶体管内置的反向导通二极管。本发明的制造方法和获得的绝缘栅双极型晶体管在反向导通二极管的n<Sup>+</Sup>结中形成复合中心,从而加速该内置的反向导通二极管的反向恢复速度,缩短其反向恢复时间,提高该绝缘栅双极型晶体管的性能。(The invention discloses a kind of insulated gate bipolar transistor and its manufacturing methods, the wherein manufacturing method of insulated gate bipolar transistor, the following steps are included: injecting hydrogen ion into substrate from the back side of the substrate of insulated gate bipolar transistor, or aluminium ion, or gallium ion, to form the N-shaped heavily doped layer of reverse conduction diodes, reverse conduction diodes are the reverse conduction diodes built in insulated gate bipolar transistor.The n of the manufacturing method of the present invention and the insulated gate bipolar transistor of acquisition in reverse conduction diodes + Complex centre is formed in knot, so that the Reverse recovery speed for the reverse conduction diodes for accelerating this built-in, shortens its reverse recovery time, improves the performance of the insulated gate bipolar transistor.)

1. a kind of manufacturing method of insulated gate bipolar transistor, which comprises the following steps:

Hydrogen ion or aluminium ion or gallium are injected into the substrate from the back side of the substrate of the insulated gate bipolar transistor Ion, to form the N-shaped heavily doped layer of the reverse conduction diodes of the insulated gate bipolar transistor.

2. the manufacturing method of insulated gate bipolar transistor as described in claim 1, which is characterized in that described from insulated gate The back side of the substrate of bipolar junction transistor injects hydrogen ion or aluminium ion or gallium ion into the substrate, is reversely led with being formed After the step of N-shaped heavily doped layer of logical diode, the manufacturing method of the insulated gate bipolar transistor further includes following step It is rapid:

N-shaped heavily doped layer annealing to the reverse conduction diodes, in the N-shaped heavily doped layer of the reverse conduction diodes Interior formation complex centre.

3. the manufacturing method of insulated gate bipolar transistor as claimed in claim 2, which is characterized in that the annealing steps are adopted With furnace anneal, annealing temperature is 200-400 degrees Celsius, and annealing time is 1-5 hours.

4. the manufacturing method of insulated gate bipolar transistor as described in claim 1, which is characterized in that described from insulated gate The back side of the substrate of bipolar junction transistor injects hydrogen ion or aluminium ion or gallium ion into the substrate, is reversely led with being formed Before the step of N-shaped heavily doped layer of logical diode, the manufacturing method of the insulated gate bipolar transistor further includes following step It is rapid:

Exposure mask is set at the back side of the substrate, and the exposure mask includes Resistance and transmission area, and the Resistance is for stopping institute It states hydrogen ion or aluminium ion or gallium ion injects the substrate；The transmission area for hydrogen ion or aluminium ion or gallium ion for wearing It crosses, to inject the substrate.

5. the manufacturing method of insulated gate bipolar transistor as claimed in claim 4, which is characterized in that the exposure mask is using poly- Imide resin material is made.

6. the manufacturing method of insulated gate bipolar transistor as claimed in claim 4, which is characterized in that the exposure mask uses aluminium Material is made.

7. the manufacturing method of insulated gate bipolar transistor as claimed in claim 4, which is characterized in that the exposure mask uses nitrogen Silicon nitride material is made.

8. the manufacturing method of the insulated gate bipolar transistor as described in any one of claim 5-7, which is characterized in that institute State exposure mask with a thickness of 2-100 microns.

9. the manufacturing method of insulated gate bipolar transistor as claimed in claim 2, which is characterized in that the annealing steps are adopted Use laser annealing.

10. a kind of insulated gate bipolar transistor, which is characterized in that the insulated gate bipolar transistor utilizes such as claim The manufacturing method of insulated gate bipolar transistor described in any one of 1-9 manufactures.

Technical field

The invention belongs to semiconductor devices and manufacturing process technology field more particularly to a kind of insulated gate bipolar transistors (Insulated Gate Bipolar Transistor, IGBT) and its manufacturing method.

Background technique

The compound full-control type voltage that IGBT is made of BJT (double pole triode) and MOS (insulating gate type field effect tube) Drive-type power semiconductor has MOSFET (Metal-Oxide-Semiconductor Field-Effect concurrently Transistor, Metal-Oxide Semiconductor field effect transistor) high input impedance and GTR (Giant Transistor, Power transistor) low conduction voltage drop of both advantage.GTR saturation pressure reduces, and current carrying density is big, but driving current is larger； MOSFET driving power very little, switching speed is fast, but conduction voltage drop is big, and current carrying density is small.IGBT combines both the above device The advantages of, driving power is small and saturation pressure reduces.It is highly suitable to be applied for the unsteady flow that DC voltage is 600V (volt) or more The fields such as system such as alternating current generator, frequency converter, Switching Power Supply, lighting circuit, Traction Drive.

In the IGBT of some specific structures, the built-in reverse conduction diodes (reverse conduction diode) of meeting, The effect of the reverse conduction diodes is freewheeling diode (flyback diode, also known as " flywheel diode " (freewheel diode)).Fig. 1 shows a kind of junction of semiconductor device of insulated gate bipolar transistor including built-in reverse conduction diodes Structure has been shown in broken lines the equivalent circuit of reverse conduction diodes D in figure.Referring to Fig.1, the insulated gate bipolar transistor packet It is light to include the first p-type heavily doped layer 104 (as collector), the first N-shaped heavily doped layer 102, the second N-shaped heavily doped layer 105, N-shaped Doped layer 101, the second p-type heavily doped layer 108, third p-type heavily doped layer 114, third N-shaped heavily doped layer 109, the 4th N-shaped weight Doped layer 112, the 5th N-shaped heavily doped layer 111, the 6th N-shaped heavily doped layer 110, gate oxide 106, grid 107, emitter 113.Wherein, the second p-type heavily doped layer 108, N-shaped lightly-doped layer 101, the second N-shaped heavily doped layer 105, the first N-shaped heavily doped layer 102 constitute built-in reverse conduction diodes D.Wherein, the first N-shaped heavily doped layer 102 is the N-shaped of reverse conduction diodes D The n of heavily doped layer namely reverse conduction diodes D⁺Knot.

In the n for making the reverse conduction diodes⁺It during knot, needs to carry out ion implanting in the substrate, forms N-shaped Heavily doped layer (the first N-shaped heavily doped layer 102).In the prior art, ion implanting is carried out in substrate to form the reverse-conducting two The n of pole pipe⁺In the process of knot, expansion technology is often pushed away using note phosphorus.As shown in figure 1, from the back side of semiconductor substrate, edge The direction the Dr phosphonium ion that implantation concentration is suitable in the semiconductor substrate, forms N-shaped heavy doping in semiconductor substrate rear surface regions Layer, n of the N-shaped heavily doped layer as reverse conduction diodes built-in in IGBT⁺Knot.But it is reversely led using what this method obtained Logical diode, Reverse recovery speed is slower, causes the performance of the IGBT bad.

Summary of the invention

The technical problem to be solved by the present invention is to overcome the reversed of the reverse conduction diodes in IGBT in the prior art The slower defect of resume speed provides a kind of insulated gate bipolar transistor and its manufacturing method.

The present invention solves above-mentioned technical problem by the following technical programs:

A kind of manufacturing method of insulated gate bipolar transistor, comprising the following steps:

Hydrogen ion or aluminium ion or gallium ion are injected into substrate from the back side of the substrate of insulated gate bipolar transistor, To form the N-shaped heavily doped layer of the reverse conduction diodes of insulated gate bipolar transistor.

Preferably, hydrogen ion is injected into substrate at the back side of the substrate from insulated gate bipolar transistor, it is anti-to be formed To conducting diode N-shaped heavily doped layer the step of after, the manufacturing method of insulated gate bipolar transistor further includes following step It is rapid:

N-shaped heavily doped layer annealing to reverse conduction diodes, with the shape in the N-shaped heavily doped layer of reverse conduction diodes At complex centre.

Preferably, annealing steps use furnace anneal, annealing temperature is 200-400 degrees Celsius, and annealing time is that 1-5 is small When.

Preferably, annealing steps use laser annealing.

Preferably, hydrogen ion or aluminium ion are injected into substrate at the back side of the substrate from insulated gate bipolar transistor, Or gallium ion, the step of N-shaped heavily doped layer to form reverse conduction diodes before, the manufacture of insulated gate bipolar transistor Method is further comprising the steps of:

Exposure mask is set at the back side of substrate, exposure mask includes Resistance and transmission area, and Resistance is for stopping hydrogen ion or aluminium Ion or gallium ion inject substrate；Transmission area for hydrogen ion or aluminium ion or gallium ion for passing through, to inject substrate.

Preferably, exposure mask is made of polyimide resin (polyimide, PI) material.

Preferably, exposure mask is made of aluminum material.

Preferably, exposure mask is made of silicon nitride (SiN) material.

Preferably, exposure mask with a thickness of 2-100 microns.

The present invention also provides a kind of insulated gate bipolar transistor, insulated gate bipolar transistor utilizes insulation of the invention The manufacturing method of grid bipolar junction transistor manufactures.

The positive effect of the present invention is that: in the manufacturing method of insulated gate bipolar transistor of the invention, making Make the n of the reverse conduction diodes of IGBT⁺In the step of knot, using hydrogen ion (or aluminium ion, gallium ion) injection technology, replace Phosphonium ion injection technology in the prior art, then annealed activation, so that hydrogen ion is formed in compound in the N-shaped heavily doped layer The heart improves the IGBT so that the Reverse recovery speed for the reverse conduction diodes for accelerating this built-in, shortens its reverse recovery time Performance.Correspondingly, insulated gate bipolar transistor of the invention uses the manufacture of insulated gate bipolar transistor of the invention Method manufacture, built in reverse conduction diodes reverse recovery time it is short, the performance of IGBT is improved.

Detailed description of the invention

Fig. 1 is the structural schematic diagram of the insulated gate bipolar transistor of the prior art.

Fig. 2 is the flow chart of the manufacturing method of the insulated gate bipolar transistor of a preferred embodiment of the invention.

Fig. 3 be the manufacturing method of the insulated gate bipolar transistor of a preferred embodiment of the invention the first is optional The structural schematic diagram of the insulated gate bipolar transistor of embodiment.

Fig. 4 is that the manufacturing method of the insulated gate bipolar transistor of a preferred embodiment of the invention completes first The status diagram of the insulated gate bipolar transistor of p-type heavily doped layer.

Fig. 5 is that the manufacturing method of the insulated gate bipolar transistor of a preferred embodiment of the invention completes first The status diagram of the insulated gate bipolar transistor of N-shaped heavily doped layer.

Fig. 6 is that second of the manufacturing method of the insulated gate bipolar transistor of a preferred embodiment of the invention is optional The structural schematic diagram of the insulated gate bipolar transistor of embodiment.

Specific embodiment

The present invention is further illustrated below by the mode of a preferred embodiment, but does not therefore limit the present invention to institute Among the scope of embodiments stated.

The manufacturing method of the insulated gate bipolar transistor of the present embodiment, as shown in Figure 2, comprising the following steps:

Step S402, hydrogen ion is injected into substrate from the back side of substrate, it is heavily doped with the N-shaped for forming reverse conduction diodes Diamicton, reverse conduction diodes are the reverse conduction diodes built in insulated gate bipolar transistor.

In order to which the hydrogen ion in the N-shaped heavily doped layer is activated, the manufacture of the insulated gate bipolar transistor of the present embodiment Method, as shown in Fig. 2, further comprising the steps of:

Step S403, it anneals to the N-shaped heavily doped layer of reverse conduction diodes.

By annealing process, the hydrogen ion in the N-shaped heavily doped layer can be activated, thus in reverse conduction diodes Complex centre is formed in N-shaped heavily doped layer.

When carrying out annealing steps, the portion of the insulated gate bipolar transistor has been made in the front of semiconductor substrate Separation structure in order to avoid the factors such as high temperature in annealing steps generate adverse effect to the structure made, and obtains preferable Annealing effect, annealing steps use laser annealing.In other of the manufacturing method of insulated gate bipolar transistor of the invention In optional embodiment, annealing steps use furnace anneal, and annealing temperature is preferably 200-400 degrees Celsius, and annealing time is 1-5 hours.

In order to carry out accurate ion implanting, placement ion is to other regional diffusions, before step S402, reference Fig. 2, The manufacturing method of the insulated gate bipolar transistor of the present embodiment is further comprising the steps of:

Step S401, exposure mask is set at the back side of substrate, exposure mask includes Resistance and transmission area, and Resistance is for stopping hydrogen Ion implanting substrate；Transmission area for hydrogen ion for passing through, to inject substrate.

The exposure mask is made of polyimide resin material or aluminum material or silicon nitride material.The polyimide resin material Material or aluminum material or silicon nitride material are commercially available.According to experimental data, in hydrogen ion implantation process, 1 micron of thickness Aluminum material exposure mask barrier effectiveness be 1 micron, that is, assuming that aluminum material exposure mask with a thickness of 5 microns, carry out hydrogen ion injection When, when hydrogen ion is injected into transmission area lower 5 microns of region, there is no hydrogen ion injection under Resistance, be all blocked.According to reality Data are tested, the barrier effectiveness of 1 micron thick of polyimide resin exposure mask is 0.7 micron.In the insulated gate bipolar of the present embodiment In the manufacturing method of transistor, polyimide resin exposure mask with a thickness of 2-100 microns, aluminum material exposure mask with a thickness of 2-100 Micron.In the prior art, earth silicon mask is often used, and earth silicon mask is because of tension, stress factors, it is certain when reaching When thickness, it is easy to happen warpage, will affect the reliability of IGBT.Therefore, earth silicon mask is unable to reach biggish thickness.And Polyimide resin exposure mask, aluminum material exposure mask can achieve biggish thickness, warpage will not still occur, it is ensured that IGBT Reliability.

In the first optional embodiment of the manufacturing method of insulated gate bipolar transistor of the invention, the insulation The manufacturing method of grid bipolar junction transistor can be used for manufacturing insulated gate bipolar transistor as shown in Figure 3, particularly for Manufacture the n of the reverse conduction diodes built in the insulated gate bipolar transistor⁺Knot.It includes built-in reversed that Fig. 3, which shows this kind, The semiconductor device structure of the insulated gate bipolar transistor of conducting diode has been shown in broken lines two pole of reverse-conducting in figure The equivalent circuit of pipe D, the insulated gate bipolar transistor use the manufacturing method of the insulated gate bipolar transistor of the present embodiment Manufacture.Referring to Fig. 3, which includes the first p-type heavily doped layer 104 (as collector), the first N-shaped weight Doped layer 202, the second N-shaped heavily doped layer 105, N-shaped lightly-doped layer 101, the second p-type heavily doped layer 108, third p-type heavy doping Layer 114, third N-shaped heavily doped layer 109, the 4th N-shaped heavily doped layer 112, the 5th N-shaped heavily doped layer 111, the 6th N-shaped heavy doping Layer 110, gate oxide 106, grid 107, emitter 113.Wherein, the second p-type heavily doped layer 108, N-shaped lightly-doped layer 101, Two N-shaped heavily doped layers 105, the first N-shaped heavily doped layer 202 constitute built-in reverse conduction diodes D.Wherein, the first N-shaped is heavily doped Diamicton 202 is the N-shaped heavily doped layer of reverse conduction diodes D, and the N-shaped heavily doped layer is as in insulated gate bipolar transistor The n of built-in reverse conduction diodes⁺Knot.

During manufacturing the insulated gate bipolar transistor, in order to form the n of reverse conduction diodes D⁺Knot, it is first First, referring to Fig. 4 (other structures to have completed in semiconductor substrate are not shown), at the back side of semiconductor substrate along the side Dr To ion is injected into semiconductor substrate, the first p-type heavily doped layer 104 is formed, and move back to the first p-type heavily doped layer 104 Fire operation.Then, referring to Fig. 5 (other structures to have completed in semiconductor substrate are not shown), in semiconductor substrate The hydrogen ion of debita spissitudo is injected at the back side along the direction Dr into the first p-type heavily doped layer 104, forms a N-shaped heavily doped layer, i.e., and the One N-shaped heavily doped layer 202, n of the N-shaped heavily doped layer as reverse conduction diodes built-in in insulated gate bipolar transistor⁺Knot.Then, annealing operation is carried out to the first N-shaped heavily doped layer 202, to activate the hydrogen ion in the first N-shaped heavily doped layer 202, To form complex centre.The other structures of insulated gate bipolar transistor shown in Fig. 3 are all made of production in the prior art Technique manufacture.

In other optional embodiments of the manufacturing method of insulated gate bipolar transistor of the invention, in production the In the step of one N-shaped heavily doped layer, aluminium ion can be injected into semiconductor substrate from the back side of semiconductor substrate along the direction Dr Or gallium ion, to form the first N-shaped heavily doped layer.

Fig. 3 shows a kind of typical structure of the insulated gate bipolar transistor including built-in reverse conduction diodes, this Field technical staff it is understood that include built-in reverse conduction diodes insulated gate bipolar transistor there are a variety of differences Structure.The manufacturing method of insulated gate bipolar transistor of the invention can be applied to various include built-in two pole of reverse-conducting The manufacture of the insulated gate bipolar transistor of pipe.The manufacturing method of insulated gate bipolar transistor of the invention is making this reversely The n of conducting diode⁺During knot, using hydrogen ion (or aluminium ion or gallium ion) injection technology, replace the prior art Phosphonium ion injection technology, in the n for forming reverse conduction diodes⁺While knot, in the n of reverse conduction diodes⁺It is formed in knot multiple Conjunction center, so that the Reverse recovery speed for the reverse conduction diodes for accelerating this built-in, shortens its reverse recovery time, improving should The performance of insulated gate bipolar transistor.

The present embodiment also provides a kind of insulated gate bipolar transistor, and structure is as shown in figure 3, include that the first p-type is heavily doped Diamicton 104 (as collector), the first N-shaped heavily doped layer 202, the second N-shaped heavily doped layer 105, N-shaped lightly-doped layer 101, second P-type heavily doped layer 108, third p-type heavily doped layer 114, third N-shaped heavily doped layer 109, the 4th N-shaped heavily doped layer 112, the 5th n Type heavily doped layer 111, the 6th N-shaped heavily doped layer 110, gate oxide 106, grid 107, emitter 113.Wherein, the second p-type weight Doped layer 108, N-shaped lightly-doped layer 101, the second N-shaped heavily doped layer 105, the first N-shaped heavily doped layer 202 constitute built-in reversed Conducting diode D.Wherein, the first N-shaped heavily doped layer 202 is the N-shaped heavily doped layer of reverse conduction diodes D, and the N-shaped is heavily doped N of the diamicton as reverse conduction diodes built-in in insulated gate bipolar transistor⁺Knot.Insulated gate bipolar transistor.It should Insulated gate bipolar transistor is using the manufacturing method manufacture of the insulated gate bipolar transistor of the present embodiment, and detailed process is no longer It repeats.Because in the n for the reverse conduction diodes for making the insulated gate bipolar transistor⁺In the step of knot, using hydrogen ion Injection technology replaces phosphonium ion injection technology in the prior art, then annealed activation, so that hydrogen ion is in the N-shaped heavy doping Complex centre is formed in layer, the Reverse recovery speed for the reverse conduction diodes that this can be accelerated built-in shortens its Reverse recovery Time, therefore, the performance of the insulated gate bipolar transistor are preferable.

In second of optional embodiment of the manufacturing method of insulated gate bipolar transistor of the invention, this implementation The manufacturing method of the insulated gate bipolar transistor of example can be also used for manufacturing insulated gate bipolar transistor as shown in FIG. 6, Particularly for the n for manufacturing the reverse conduction diodes built in the insulated gate bipolar transistor⁺Knot.The insulated gate bipolar is brilliant Body pipe includes collector 503 (collector 503 is metal anode, metal anode), the first p-type heavily doped layer 104, the first N-shaped Heavily doped layer 202, N-shaped drift region (drift region) 505, p trap 506, the second N-shaped heavily doped layer 507, (hair of emitter 501 Emitter-base bandgap grading 501 be metallic cathode, metal cathode), gate oxide 504, grid 508.P trap 506, N-shaped drift region 505, first N-shaped heavily doped layer 202 forms reverse conduction diodes D1, be shown in broken lines in Fig. 6 reverse conduction diodes D1 etc. Imitate circuit, wherein the first N-shaped heavily doped layer 202 is the N-shaped heavily doped layer of reverse conduction diodes D1, the N-shaped heavily doped layer N as reverse conduction diodes built-in in insulated gate bipolar transistor⁺Knot.

During manufacturing the insulated gate bipolar transistor, in order to form the n of reverse conduction diodes D1⁺Knot, it is first First, referring to Fig. 4 (other structures to have completed in semiconductor substrate are not shown), at the back side of semiconductor substrate along the side Dr To ion is injected into semiconductor substrate, the first p-type heavily doped layer 104 is formed, and move back to the first p-type heavily doped layer 104 Fire operation.Then, referring to Fig. 5 (other structures to have completed in semiconductor substrate are not shown), in semiconductor substrate The hydrogen ion of debita spissitudo is injected at the back side along the direction Dr into the first p-type heavily doped layer 104, forms a N-shaped heavily doped layer, i.e., and the One N-shaped heavily doped layer 202, n of the N-shaped heavily doped layer as reverse conduction diodes built-in in insulated gate bipolar transistor⁺Knot.Then, annealing operation is carried out to the first N-shaped heavily doped layer 202, to activate the hydrogen ion in the first N-shaped heavily doped layer 202, To form complex centre.The other structures of insulated gate bipolar transistor shown in fig. 6 are all made of production in the prior art Technique manufacture.

Although specific embodiments of the present invention have been described above, it will be appreciated by those of skill in the art that these It is merely illustrative of, protection scope of the present invention is defined by the appended claims.Those skilled in the art is not carrying on the back Under the premise of from the principle and substance of the present invention, many changes and modifications may be made, but these are changed Protection scope of the present invention is each fallen with modification.