阅读说明：本技术 降低非易失性存储器中电荷损失的方法 (The method for reducing loss of charge in nonvolatile memory ) 是由 帕万·辛格 S·谢蒂 J·帕克 于 2018-02-21 设计创作，主要内容包括：一种存储器装置,具有并排设置在衬底上的至少两个非易失性存储器(NVM)单元和在衬底中设置在第一NVM单元和第二NVM单元之间的隔离结构。第一NVM单元和第二NVM单元共享包括连续结构的公共电荷俘获层,并且设置在隔离结构正上方的公共电荷俘获层的部分比设置在第一NVM单元和第二NVM单元内的公共电荷俘获层的部分包括更高的氧和/或氮浓度。(A kind of memory device, has that be arranged side by side on substrate at least two nonvolatile memories (NVM) unit and the isolation structure that is arranged between the first NVM cell and the second NVM cell in the substrate.The shared common electrical charge capture layer including continuous structure of first NVM cell and the second NVM cell, and it includes higher oxygen and/or nitrogen concentration that the part of the common electrical charge capture layer right above isolation structure, which is arranged in, than the part for the common electrical charge capture layer being arranged in the first NVM cell and the second NVM cell.)