阅读说明：本技术 一种基于igbt模块的母排的新型制备工艺 (A kind of novel preparation process of the busbar based on IGBT module ) 是由 宗荣生 戴赟彬 白艳 侯广西 蒋超 于 2019-08-29 设计创作，主要内容包括：本发明公开了一种基于IGBT模块的母排的新型制备工艺,可以实现在进行母排和电极等电子元器件时,抛弃传统的焊盘形式,采用新型的定位筒形式,通过预先设计的延伸型导电件,一方面实现稳定的电性连接,另一方面可以代替现有的工装实现初定位作用,在滴加焊膏后直接进入焊接工序,大幅降低成本和装配的繁琐性,使用的焊膏量与传统工艺比较大幅减少,仅需要极少量的焊膏滴加至定位筒中,即可实现精准、稳定的焊接,进而降低后续工艺的清洗压力,甚至在滴加量严格控制的情况下达到免清洗的地步,采用新型工艺制备的IGBT模块在成本和效率上具有无可比拟的优势,且规避了许多影响产品质量的因素,具有极高的市场推广价值。(The invention discloses a kind of novel preparation process of busbar based on IGBT module, it may be implemented when carrying out the electronic components such as busbar and electrode, the pad form to discard tradition, using novel positioning cartridge form, pass through the extended conduct piece being pre-designed, on the one hand stable electric connection is realized, on the other hand it can replace existing tooling and realize just positioning action, welding sequence is directly entered after soldering paste is added dropwise, the triviality of cost and assembly is greatly reduced, larger amplitude is reduced the solder paste amounts used compared with traditional handicraft, minimal amount of soldering paste is only needed to be added dropwise in positioning tube, it can be realized precisely, stable welding, and then reduce the cleaning pressure of subsequent technique, even reach stage free of cleaning in the case where dripping quantity strict control, being had in cost and efficiency using the IGBT module of novel process preparation can not The advantage of analogy, and evaded many factors for influencing product quality, there is high market popularization value.)

1. a kind of novel preparation process of the busbar based on IGBT module, it is characterised in that: the IGBT module includes liner plate (2), substrate (1), busbar (5), electrode (4), semiconductor chip (3) and shell, it is several fixed to be fixedly connected on the liner plate (2) Position cylinder (6), interior dig of the positioning tube (6) have cylindrical hole, are fixedly connected on the cylindrical hole lower end wall conducting block (8), and It is fixed at the pin and terminal of circuit connection on conducting block (8) lower end and liner plate (2), the busbar (5) and electrode (4) to connect It is connected to conductive pin (7), and conductive pin (7) is integrally formed with busbar (5) and electrode (4) respectively, the preparation work of the IGBT module Skill the following steps are included:

Step 1: former material prepares: liner plate (2) goes out circuit layout in surface etch according to design circuit topology, determines semiconductor core The position of piece (3), busbar (5) and electrode (4)；

Step 2: checking elements: checking respectively for liner plate (2), substrate (1), busbar (5), electrode (4), semiconductor chip (3) and outer Shell, it is ensured that enter step 3 after qualified, otherwise replace qualified element；

Step 3: welding for the first time: semiconductor chip (3) being pre-welded on liner plate (2), liner plate (2) component is obtained；

Step 4: second is welded: substrate (1) component on liner plate (2) components welding to substrate (1), will be obtained；

Step 5: element assembles: soldering paste being added dropwise in positioning tube (6), the conductive pin (7) on busbar (5) and electrode (4) is pressed It is aligned and is inserted into according to design position, obtain IGBT module idiosome after realizing just positioning；

Step 6: third time is welded: IGBT module idiosome being sent into the import of continuous tunnel furnace, the running speed of continuous tunnel furnace crawler belt is set It is set to 0.003-0.005m/s, controls continuous tunnel furnace welding section temperature within the scope of 220-350 DEG C, logical nitrogen is needed in welding whole process Protection carries out reflow soldering, takes out IGBT module idiosome from tunnel outlet of still；

Step 7: X-ray detects: being detected with x-ray scanning instrument to the IGBT module idiosome being welded, reject voidage and do not meet It is required that idiosome；

Step 8: shell is installed: IGBT module idiosome and shell and other structures part being assembled as required, arranged；

Step 9: encapsulating is protected: by the inlet on shell, Silica hydrogel is perfused into IGBT module idiosome；

Step 10: high temperature ageing: in 120-150 DEG C of temperature range, carrying out the aging of 12-24h；

Step 11: terminal forms: by electrode (4) terminal bending of extraction, shaping, fixation, obtaining IGBT module finished product；

Step 12: test factory: showing packaging to the laggard rower of IGBT module finished product test.

2. a kind of novel preparation process of busbar based on IGBT module according to claim 1, it is characterised in that: described Conducting block (8) upper end, which is dug, has hemisphere to be electrically connected slot (9), and the conductive pin (7) includes extension (71) and hemisphere interconnecting piece (72), And hemisphere interconnecting piece (72) and the hemisphere slot (9) that is electrically connected match, the extension (71) and hemisphere are electrically connected between slot (9) and are coated with Layer of solder paste (10).

3. a kind of novel preparation process of busbar based on IGBT module according to claim 2, it is characterised in that: described Hemisphere be electrically connected slot (9) radius and conducting block (8) length ratio be 1:1.2-1.5.

4. a kind of novel preparation process of busbar based on IGBT module according to claim 2, it is characterised in that: described Extension (71) and the length ratio of hemisphere interconnecting piece (72) are 1:0.4-2.

5. a kind of novel preparation process of busbar based on IGBT module according to claim 2, it is characterised in that: described The length ratio that conductive pin (7) is located at part and positioning tube (6) in positioning tube (6) is 1:1.2-1.4, conductive pin (7) position In the length ratio of the part of positioning tube (6) outside and conductive pin (7) be 1:5-6.

6. a kind of novel preparation process of busbar based on IGBT module according to claim 1, it is characterised in that: described Semiconductor chip (3) is welded in the form of weld tabs, molybdenum sheet and weld tabs when welding for the first time, the semiconductor chip (3) Including igbt chip and FWD chip.

7. a kind of novel preparation process of busbar based on IGBT module according to claim 1, it is characterised in that: described Liner plate (2) component directlys adopt weld tabs and is soldered on substrate (1) when second of welding.

8. a kind of novel preparation process of busbar based on IGBT module according to claim 1, it is characterised in that: described Continuous tunnel furnace welding section successively includes warm-up phase, welding stage and holding stage, the warm-up phase, welding stage and heat preservation rank The length ratio of section is 1:5-10:1-2.

9. a kind of novel preparation process of busbar based on IGBT module according to claim 1, it is characterised in that: described The temperature of warm-up phase is controlled at 220-250 DEG C, and the temperature in the welding stage is controlled at 300-350 DEG C, the holding stage Temperature control at 250-300 DEG C, and reflow soldering section temperature change whole process be no more than 5 DEG C/min.

10. a kind of novel preparation process of busbar based on IGBT module according to claim 1, it is characterised in that: institute It is remained before stating X-ray detection with the rosin of absolute alcohol and scrub-brush scrub clean IGBT module idiosome, especially pad, weldering The residues such as scruff dry IGBT module idiosome with dryer or thermal chimney, reexamined after dry whether have obvious rosin joint, Short-circuit solder joint and scolding tin slag residual etc., then brush one times IGBT module idiosome or IGBT module embryo with hairbrush for marine glue Body immerses marine glue one time, finally marine glue is waited to solidify next step of being allowed for access.

Technical field

The present invention relates to technical field of manufacturing semiconductors, more specifically to a kind of busbar based on IGBT module Novel preparation process.

Background technique

IGBT (Insulated Gate Bipolar Transistor), insulated gate bipolar transistor is (double by BJT Polar form triode) and MOS (insulating gate type field effect tube) composition compound full-control type voltage driven type power semiconductor, Have advantage of both the high input impedance of MOSFET and the low conduction voltage drop of GTR concurrently.GTR saturation pressure reduces, and current carrying density is big, But driving current is larger；MOSFET driving power very little, switching speed is fast, but conduction voltage drop is big, and current carrying density is small.IGBT is comprehensive The advantages of both the above device, driving power is small and saturation pressure reduces.Be highly suitable to be applied for DC voltage be 600V and with On the fields such as converter system such as alternating current generator, frequency converter, Switching Power Supply, lighting circuit, Traction Drive.

IGBT module is by IGBT(insulated gate bipolar transistor chip) with FWD(freewheeling diode chip) by specific Circuit bridge encapsulation made of modularized semiconductor product；Between IGBT module after encapsulation directly applies to frequency converter, UPS not In the equipment such as power-off source；IGBT module has the characteristics that energy saving, convenient to install and maintain, heat dissipation is stablized；It is sold on Vehicles Collected from Market Mostly this kind of module product, general described IGBT also refer to IGBT module；With the propulsion of the theories such as energy conservation and environmental protection, such production Product on the market will be more and more common.

Current various IGBT modules both domestic and external, welding procedure are divided into welding twice and two kinds of welding three times.Traditional work Skill is the welding manner of welding procedure twice are as follows: 1, first required chip is welded on liner plate, obtain liner plate component；2, by liner plate Component, busbar, spring lead and substrate weld together, and obtain IGBT module.

This welding procedure is the welding carried out based on soldering paste, due to largely using soldering paste, the IGBT mould obtained after welding Remain a large amount of scaling powder in block, the quality of product is adversely affected, therefore the cleaning process after welding is required very Height, the time of cleaning is very long, and efficiency is very low, does not adapt to the requirement of large-scale production.

To solve the above-mentioned problems, some IGBT module manufacturing enterprises have generallyd use the work welded three times both at home and abroad at present Skill, the three times welding manner of welding procedure are as follows: 1, required chip is welded on liner plate, obtain liner plate component；2, by liner plate group Part and substrate weld together, and obtain board unit；3, it is welded between board unit and busbar, spring lead, and Adhesive curing is applied between board unit and side frame, i.e., so-called integration welding and solidification process obtain IGBT module later.

Welding process is welded using weld tabs twice before wherein, and third time welding is solidified using soldering paste and with side frame gluing Process is combined together progress, and such welding sequence does not increase, but the use due to greatly reducing soldering paste, after welding The requirement of cleaning process is greatly reduced, and scavenging period substantially shortens, therefore has adapted to the requirement produced in enormous quantities, but is welding It may require that the electronic components such as chip, busbar are fixed on the positioning in tooling or fixture in the process or inevitably, side It can guarantee welding quality, however the installation and removal of tooling need to expend a large amount of manpower and material resources and time, greatly reduce Welding efficiency undoubtedly increases welding cost, and in space utilization rate even if the hold mode tooling without disassembly occurs in market It has a greatly reduced quality.

Summary of the invention

1. technical problems to be solved

Aiming at the problems existing in the prior art, the purpose of the present invention is to provide a kind of the novel of busbar based on IGBT module Preparation process, it may be implemented when carrying out the electronic components such as busbar and electrode, the pad form to discard tradition, and use is novel Positioning cartridge form on the one hand stable electric connection is realized by the extended conduct piece being pre-designed, on the other hand can be with Just positioning action is realized instead of existing tooling, is directly entered welding sequence after soldering paste is added dropwise, cost and assembly is greatly reduced Triviality, the solder paste amounts used compared with traditional handicraft larger amplitude reduce, it is only necessary to minimal amount of soldering paste is added dropwise in positioning tube, It can be realized accurate, stable welding, and then reduce the cleaning pressure of subsequent technique, or even the dripping quantity strict control the case where Under reach stage free of cleaning, using novel process preparation IGBT module in cost and efficiency have it is unrivaled excellent Gesture, and evaded many factors for influencing product quality, there is high market popularization value.

2. technical solution

To solve the above problems, the present invention adopts the following technical scheme that.

A kind of novel preparation process of the busbar based on IGBT module, the IGBT module include liner plate, substrate, busbar, Electrode, semiconductor chip and shell are fixedly connected with several positioning tubes on the liner plate, and digging in the positioning tube has cylindricality Hole is fixedly connected with conducting block, and the circuit connection on conducting block lower end and liner plate, the busbar on the cylindrical hole lower end wall Be fixedly connected to conductive pin at the pin and terminal of electrode, and conductive pin is integrally formed with busbar and electrode respectively, described The preparation process of IGBT module the following steps are included:

Step 1: former material prepares: liner plate in surface etch goes out circuit layout according to design circuit topology, determine semiconductor chip, The position of busbar and electrode；

Step 2: checking elements: checking respectively for liner plate, substrate, busbar, electrode, semiconductor chip and shell, it is ensured that qualified laggard Enter step 3, otherwise replaces qualified element；

Step 3: welding for the first time: semiconductor chip being pre-welded on liner plate, liner plate component is obtained；

Step 4: second is welded: by liner plate components welding to substrate, obtaining board unit；

Step 5: element assembles: soldering paste being added dropwise in positioning tube, by the conductive pin on busbar and electrode according to design position pair Quasi- insertion obtains IGBT module idiosome after realizing just positioning；

Step 6: third time is welded: IGBT module idiosome being sent into the import of continuous tunnel furnace, the running speed of continuous tunnel furnace crawler belt is set It is set to 0.003-0.005m/s, controls continuous tunnel furnace welding section temperature within the scope of 220-350 DEG C, logical nitrogen is needed in welding whole process Protection carries out reflow soldering, takes out IGBT module idiosome from tunnel outlet of still；

Step 7: X-ray detects: being detected with x-ray scanning instrument to the IGBT module idiosome being welded, reject voidage and do not meet It is required that idiosome；

Step 8: shell is installed: IGBT module idiosome and shell and other structures part being assembled as required, arranged；

Step 9: encapsulating is protected: by the inlet on shell, Silica hydrogel is perfused into IGBT module idiosome；

Step 10: high temperature ageing: in 120-150 DEG C of temperature range, carrying out the aging of 12-24h；

Step 11: terminal forms: by electrode terminal bending, shaping, the fixation of extraction, obtaining IGBT module finished product；

Step 12: test factory: showing packaging to the laggard rower of IGBT module finished product test.

Further, the conducting block upper end, which is dug, has hemisphere to be electrically connected slot, and the conductive pin includes that extension and hemisphere connect Socket part, and hemisphere interconnecting piece and the hemisphere slot that is electrically connected match, the extension and hemisphere are electrically connected between slot and are coated with layer of solder paste, lead to It crosses the be electrically connected spherical surface of slot and hemisphere interconnecting piece of hemisphere to coincide characteristic, improves and be electrically connected by increasing the contact area between conductor Stability, while convenient for assembly and good positioning effect, in addition soldering paste is easier to soak conductive pin and conducting block, significantly improves weldering Quality and bond strength are connect, and then further promotes the stability being electrically connected.

Further, the hemisphere be electrically connected slot radius and conducting block length ratio be 1:1.2-1.5, reducing as far as possible Facilitate electric current to pass through while resistance, realizes and be electrically connected with the liner plate circuit of lower end, reduce meaningless current loss.

Further, the length ratio of the extension and hemisphere interconnecting piece is 1:0.4-2, fully takes into account the whole of conductive pin Stability when body mechanical strength and assembly only meets the high good positioning effect not easy to break and first of intensity and is not easy to shift, returning It just can guarantee welding quality and precision when fluid welding connects, and then guarantee the qualification rate of IGBT module.

Further, the length ratio that the conductive pin is located at part and positioning tube in positioning tube is 1:1.2-1.4, described The length ratio that conductive pin is located at part and conductive pin outside positioning tube is 1:5-6, should guarantee the enough insertion depths of conductive pin Meet positioning tube to its first positioning action, at the same answer reserved part length avoid positioning tube directly with busbar pin and electrode Bring unfavorable factor is directly physically contacted in terminal, and length in reserve should also facilitate technical staff to clear up soldering paste.

Further, semiconductor chip is welded in the form of weld tabs, molybdenum sheet and weld tabs when the first time welds, The semiconductor chip includes igbt chip and FWD chip, and semiconductor chip is then unsuitable directly to be welded with liner plate, because of semiconductor Chip is usually silicon materials, very big with the thermal expansion coefficient gap of liner plate, and directly welding can generate in semiconductor chip is not easy The stress of elimination, and due to necessarily leading to cold cycling when semiconductor devices work, the growth of these stress can be aggravated, to lead Device fatigue, failure are caused, after deflection reaches 60% or more rolling processing, the density of molybdenum sheet may be substantially close to molybdenum sheet The theoretical density of molybdenum, therefore it has high intensity, the uniform excellent Properties of High Temperature Creep of interior tissue can be used for offsetting Uneven thermal stress between semiconductor chip and liner plate.

Further, described second liner plate component when welding directlys adopt weld tabs and is soldered on substrate, liner plate and substrate It directly welds, without considering thermal stress, it is simple to save process welding, and do not use soldering paste that IGBT module product can be improved Quality and the subsequent cleaning pressure of reduction.

Further, the continuous tunnel furnace welding section successively includes warm-up phase, welding stage and holding stage, the preheating The length ratio in stage, welding stage and holding stage is 1:5-10:1-2, is controlled by the control of good temperature and time, can be with The quality of reflow soldering is significantly improved, and then improves the q&r of pad.

Further, the temperature of the warm-up phase is controlled at 220-250 DEG C, and the temperature control in the welding stage exists 300-350 DEG C, the temperature of the holding stage is controlled at 250-300 DEG C, and reflow soldering section temperature change whole process is no more than 5 DEG C/min, avoid occurring inside the too fast variation bring soldering paste of temperature that thermal stress is excessive and non-uniform phenomenon, and then open The case where splitting or falling off.

Further, absolute alcohol and scrub-brush scrub clean IGBT module idiosome are used before the X-ray detection, especially The residues such as the rosin residual of pad, scolding tin slag dry IGBT module idiosome with dryer or thermal chimney, after having dried again Obvious rosin joint, short-circuit solder joint and scolding tin slag residual etc. are checked whether there is, marine glue is then brushed one times into IGBT module with hairbrush Idiosome or IGBT module idiosome immerse marine glue one time, finally marine glue are waited to solidify next step of being allowed for access, effectively The quality of IGBT module product can be improved in cleaning, because of either water, dust or the remaining rosin of welding procedure, scolding tin slag Deng, all there is extremely serious corrosion function to circuit, therefore carry out encapsulating after good cleaning again, it not only can be with waterproof, anti- Ash, anticorrosion, it is antipollution effective guarantee that casting glue, which also has stable dielectric insulation, at the same solidify after at To form flexible elastomer, impact can be eliminated within the scope of biggish temperature and humidity and shaking generated stress.

3. beneficial effect

Compared with the prior art, the present invention has the advantages that

This programme may be implemented when carrying out the electronic components such as busbar and electrode, the pad form to discard tradition, and use is novel Positioning cartridge form on the one hand stable electric connection is realized by the extended conduct piece being pre-designed, on the other hand can be with Just positioning action is realized instead of existing tooling, is directly entered welding sequence after soldering paste is added dropwise, cost and assembly is greatly reduced Triviality, the solder paste amounts used compared with traditional handicraft larger amplitude reduce, it is only necessary to minimal amount of soldering paste is added dropwise in positioning tube, It can be realized accurate, stable welding, and then reduce the cleaning pressure of subsequent technique, or even the dripping quantity strict control the case where Under reach stage free of cleaning, using novel process preparation IGBT module in cost and efficiency have it is unrivaled excellent Gesture, and evaded many factors for influencing product quality, there is high market popularization value.

Detailed description of the invention

Fig. 1 is the main flow diagram of the present invention；

Fig. 2 is the structural schematic diagram of IGBT module part of the present invention；

Fig. 3 is the structural schematic diagram of positioning tube part of the present invention；

Fig. 4 is the structural schematic diagram when present invention welds for the first time；

Structural schematic diagram when Fig. 5 is second of welding of the present invention；

Fig. 6 is structural schematic diagram when present invention third time is welded.

Figure label explanation:

1 substrate, 2 liner plates, 3 semiconductor chips, 4 electrodes, 5 busbars, 6 positioning tubes, 7 conductive pins, 71 extensions, the connection of 72 hemisphere Portion, 8 conducting blocks, 9 hemisphere are electrically connected slot, 10 layer of solder paste.

Specific embodiment

Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete Site preparation description；Obviously, described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments, is based on Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other Embodiment shall fall within the protection scope of the present invention.

In the description of the present invention, it should be noted that the instruction such as term " on ", "lower", "inner", "outside", " top/bottom end " Orientation or positional relationship be based on the orientation or positional relationship shown in the drawings, be merely for convenience of description the present invention and simplification retouch It states, rather than the device or element of indication or suggestion meaning must have a particular orientation, be constructed and operated in a specific orientation, Therefore it is not considered as limiting the invention.In addition, term " first ", " second " are used for description purposes only, and cannot understand For indication or suggestion relative importance.

In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation " " is set Be equipped with ", " be arranged/connect ", " connection " etc., shall be understood in a broad sense, such as " connection ", may be a fixed connection, be also possible to removable Connection is unloaded, or is integrally connected, can be mechanical connection, is also possible to be electrically connected, can be directly connected, it can also be in Between medium be indirectly connected, can be the connection inside two elements, for the ordinary skill in the art, can be specific Situation understands the concrete meaning of above-mentioned term in the present invention.