阅读说明：本技术 传感器件及其制作方法 (Senser element and preparation method thereof ) 是由 杨帅 李加东 苗斌 丁祥桢 古乐 顾智琦 王瑾 吴东岷 于 2018-05-24 设计创作，主要内容包括：本发明公开了一种传感器件,所述传感器件包括：传感部,包括第一半导体衬底、第一电极层和第二电极层,所述第一电极层和所述第二电极层设置于所述第一半导体衬底上,所述第一电极层和所述第二电极层之间具有间隔；检测部,独立于所述传感部,所述检测部包括第二衬底以及设置于所述第二衬底上的检测电极层；电连接部,连接所述检测电极层并通过所述间隔与所述第一半导体衬底连接。本发明还公开了一种传感器件器的制作方法。本发明的传感器件,设置检测部,通过电连接部将第一半导体衬底与检测电极层连接起来,通过检测部去检测样本,可以有效保护传感器件不被检测样本污染、降解,从而大大提高传感器件的可靠性,延长使用寿命,提高传感器件的抗干扰能力。(The invention discloses a kind of senser elements, the senser element includes: detecting means, including the first semiconductor substrate, first electrode layer and the second electrode lay, the first electrode layer and the second electrode lay are set in first semiconductor substrate, have interval between the first electrode layer and the second electrode lay；Test section, independently of the detecting means, the test section includes the second substrate and the detecting electrode layer that is set on second substrate；Electrical connection section connects the detecting electrode layer and is connect by the interval with first semiconductor substrate.The invention also discloses a kind of production methods of senser element device.Sensor of the invention part; test section is set; the first semiconductor substrate is connected with detecting electrode layer by electrical connection section; detection sample is removed by test section; sample contamination, degradation can not be detected with effective protection senser element; to greatly improve the reliability of senser element, prolongs the service life, improve the anti-interference ability of senser element.)

1. a kind of senser element, which is characterized in that the senser element includes:

Detecting means, including the first semiconductor substrate, first electrode layer and the second electrode lay, the first electrode layer and described second Electrode layer is set in first semiconductor substrate, has interval between the first electrode layer and the second electrode lay；

Test section, independently of the detecting means, the test section includes the second substrate and is set on second substrate Detecting electrode layer；

Electrical connection section connects the detecting electrode layer and is connect by the interval with first semiconductor substrate.

2. senser element according to claim 1, which is characterized in that the detecting means further include third electrode layer, described Third electrode layer is set on the part of first semiconductor substrate being located in the interval.

3. biochemical sensor according to claim 1, which is characterized in that the detecting means further include the first encapsulated layer, institute It states the first encapsulated layer to be set on first semiconductor substrate, the first electrode layer and the second electrode lay, described One encapsulated layer includes the first via hole of the exposed first electrode layer, the second via hole of the exposure the second electrode lay and exposure The third via hole at the interval.

4. senser element according to any one of claims 1 to 3, which is characterized in that first semiconductor substrate includes Silicon substrate and sequentially lamination are set to the first gallium nitride layer, gallium nitride layer and the second gallium nitride layer on the silicon substrate；Institute State the upper part of the two side portions of the second gallium nitride layer, the two side portions of the gallium nitride layer and first gallium nitride layer Two side portions are etched removal.

5. senser element according to claim 4, which is characterized in that the first electrode layer is set to second nitridation On the remainder of gallium layer, and the first electrode layer extends on the lower part of first gallium nitride layer；Described second Electrode layer is set on the remainder of second gallium nitride layer, and the second electrode lay extends to first nitridation On the lower part of gallium layer；Wherein, the first electrode layer on the remainder of second gallium nitride layer and described There is the interval between two electrode layers.

6. senser element according to claim 5, which is characterized in that the detecting means further include:

First ohmic contact layer, first ohmic contact layer are set to the first electrode layer and second gallium nitride layer Between remainder, and first ohmic contact layer extends under the first electrode layer and first gallium nitride layer Between part；

Second ohmic contact layer, second ohmic contact layer are set to the second electrode lay and second gallium nitride layer Between remainder, and second ohmic contact layer extends under the second electrode lay and first gallium nitride layer Between part.

7. senser element according to claim 1, which is characterized in that the test section further includes the second encapsulated layer, described Second encapsulated layer is set on the part of second substrate not covered by the detecting electrode layer, second encapsulated layer Thickness is greater than the thickness of the detecting electrode layer, to form the test chamber for accommodating object to be detected.

8. a kind of production method of senser element, which is characterized in that the production method includes:

The first electrode layer being spaced each other and the second electrode lay are formed in the first semiconductor substrate；

Detecting electrode layer is formed on the second substrate；

So that electrical connection section is connected the detecting electrode layer and electrical connection section is made to pass through the interval and first semiconductor substrate Connection.

9. production method according to claim 8, which is characterized in that first semiconductor substrate include silicon substrate and Sequentially lamination is set to the first gallium nitride layer, gallium nitride layer and the second gallium nitride layer on the silicon substrate；

Wherein, the method that the first electrode layer and the second electrode lay that are spaced each other are formed in the first semiconductor substrate includes:

By the two side portions of second gallium nitride layer, the two side portions of the gallium nitride layer and first gallium nitride layer The two side portions of upper part etch removal.

The first ohmic contact layer is formed on the remainder of second gallium nitride layer, and prolongs first ohmic contact layer On the lower part for extending to first gallium nitride layer；

The second ohmic contact layer is formed on the remainder of second gallium nitride layer, and makes second ohmic contact layer It extends on the lower part of first gallium nitride layer；Wherein, first on the remainder of second gallium nitride layer There is the interval between ohmic contact layer and the second ohmic contact layer；

First electrode layer and the second electrode lay are formed on first ohmic contact layer and second ohmic contact layer respectively；

The first encapsulated layer is formed in the first electrode layer, on the second electrode lay and in the interval；

The first via hole, the exposure the second electrode lay of the exposure first electrode layer are respectively formed in first encapsulated layer The second via hole and the exposure interval third via hole.

10. production method according to claim 8, which is characterized in that form the side of detecting electrode layer on the second substrate Method includes:

Detecting electrode layer is formed on second substrate；

On second substrate and the second encapsulated layer is formed in the detecting electrode layer, the thickness of second encapsulated layer is greater than The thickness of the detecting electrode layer；

The 4th via hole that the detecting electrode layer is completely exposed is formed in second encapsulated layer.

Technical field

The invention belongs to electrochemical sensor fields, and in particular, to a kind of senser element and preparation method thereof.

Background technique

In recent years, with the outburst of some global fatal diseases and being attacked using the terror of chemical and biological weapons for some bursts Event is hit, reflects that also lacking reliable and effective detection means and biotechnology at present goes such issues that cope with.Detection is viral, thin Bacterium, albumen, antigen and cell needs are small-sized, reliably, cheaply, disposable and easily operated detection mode, and sensor has The above advantage.Most of sensors can be classified as electronics and optics, although optical sensor is very sensitive, list may be implemented Molecular Detection, but be to rely on special sample preparation, equipment is expensive, and equipment is huge, thus seldom optical sensor complete from Laboratory is to commercialized conversion.Up to the present, the field-effect crystalline substance based on semiconductor conducting channel being chemically modified Body pipe (FET) electronics biochemical sensor is that most have prospect and most practical.

As the sensor technology based on semiconductor is increasingly mature, FET type sensor application also more extensively, has behaviour The advantages that work is simple, response quickly, high sensitivity, portability can realize trace detection, various research tables to detection sample It is bright, the complexity of the biological analyte with clinical correlation can be best solved using the FET being made of compound semiconductor Property, so FET type sensor causes people greatly to pay close attention to.

Gallium nitride has good chemical stability, broad stopband, thermal stability, height full as third generation semiconductor material And the advantages that electron transfer rate, so it has become research hotspot in semiconductor field.From nineteen seventies with Come, GaN material begins to be studied, and is widely used in visible light and ultraviolet LED, laser, amplifier and FET and height Electron mobility transistor (HEMT).GaN material is due to nontoxic, and solubility is low in water, and blood stability is high, has compared to silicon Splendid corrosion resistance, high temperature resistant, reliability, thus GaN base biochemical sensor using very extensive.And it is based on GaN material FET type biochemical sensor due to their fabulous stability in air, water and blood environment, outstanding bio-compatible Property, can be realized to electrical and surface characteristic good control, it is shown that GaN base FET biosensor clinical application it is huge Potentiality.

Up to the present, there are many scholars to do numerous studies to GaN base FET type biochemical sensor, and obtained Great successes.But in the detection process, it all not can avoid detection sample directly to contact with sensor surface, and GaN base FET type biochemical sensor area of grid is extremely sensitive to the variation on surface, so these traditional GaN base FET type biochemical sensitives Device all not can avoid sensor and be detected sample contamination degradation, while be highly susceptible to the interference of external environment yet, such as illumination, Mechanical disturbance etc. when noise, addition detection sample, these factors can all influence the service life, reliability, stabilization of sensor Property, sensitivity and precision.

Summary of the invention

To solve the above-mentioned problems of the prior art, the present invention provides a kind of strong antijamming capability, detection process are steady Fixed reliable, long service life, the senser element for not being detected sample contamination and preparation method thereof.

In order to achieve the above object of the invention, present invention employs the following technical solutions:

According to an aspect of the present invention, a kind of senser element is provided, the senser element includes:

Detecting means, including the first semiconductor substrate, first electrode layer and the second electrode lay, the first electrode layer and described The second electrode lay is set in first semiconductor substrate, between having between the first electrode layer and the second electrode lay Every；

Test section, independently of the detecting means, the test section is including the second substrate and is set to second substrate On detecting electrode layer；

Electrical connection section connects the detecting electrode layer and is connect by the interval with first semiconductor substrate.

Further, the detecting means further include third electrode layer, and the third electrode layer is set to described the first half and leads On the part of body substrate being located in the interval.

Further, the detecting means further include the first encapsulated layer, and first encapsulated layer is set to described the first half and leads On body substrate, the first electrode layer and the second electrode lay, first encapsulated layer includes the exposure first electrode layer The first via hole, the second via hole of the exposure the second electrode lay and the third via hole at the exposure interval.

Further, first semiconductor substrate includes silicon substrate and sequentially lamination is set on the silicon substrate First gallium nitride layer, gallium nitride layer and the second gallium nitride layer；The two side portions of second gallium nitride layer, the gallium nitride layer The two side portions of the upper part of two side portions and first gallium nitride layer are etched removal.

Further, the first electrode layer is set on the remainder of second gallium nitride layer, and described One electrode layer extends on the lower part of first gallium nitride layer；The second electrode lay is set to second gallium nitride layer Remainder on, and the second electrode lay extends on the lower part of first gallium nitride layer；Wherein, it is located at described There is the interval between the first electrode layer and the second electrode lay on the remainder of second gallium nitride layer.

Further, the detecting means further include:

First ohmic contact layer, first ohmic contact layer are set to the first electrode layer and second gallium nitride Between the remainder of layer, and first ohmic contact layer extends to the first electrode layer and first gallium nitride layer Lower part point between；

Second ohmic contact layer, second ohmic contact layer are set to the second electrode lay and second gallium nitride Between the remainder of layer, and second ohmic contact layer extends to the second electrode lay and first gallium nitride layer Lower part point between.

Further, the test section further includes the second encapsulated layer, and second encapsulated layer is set to second substrate The part not covered by the detecting electrode layer on, the thickness of second encapsulated layer is greater than the thickness of the detecting electrode layer Degree, to form the test chamber for accommodating object to be detected.

According to another aspect of the present invention, a kind of production method of senser element is additionally provided, the production method includes:

The first electrode layer being spaced each other and the second electrode lay are formed in the first semiconductor substrate；

Detecting electrode layer is formed on the second substrate；

So that electrical connection section is connected the detecting electrode layer and electrical connection section is made to pass through the interval and first semiconductor Substrate connection.

Further, first semiconductor substrate includes silicon substrate and sequentially lamination is set on the silicon substrate First gallium nitride layer, gallium nitride layer and the second gallium nitride layer；

Wherein, the method packet of the first electrode layer and the second electrode lay that are spaced each other is formed in the first semiconductor substrate It includes:

By the two side portions of second gallium nitride layer, the two side portions of the gallium nitride layer and first gallium nitride The two side portions of the upper part of layer etch removal.

The first ohmic contact layer is formed on the remainder of second gallium nitride layer, and makes first Ohmic contact Layer extends on the lower part of first gallium nitride layer；

The second ohmic contact layer is formed on the remainder of second gallium nitride layer, and makes described second ohm to connect Contact layer extends on the lower part of first gallium nitride layer；Wherein, on the remainder of second gallium nitride layer There is the interval between first ohmic contact layer and the second ohmic contact layer；

First electrode layer and the second electricity are formed on first ohmic contact layer and second ohmic contact layer respectively Pole layer；

The first encapsulated layer is formed in the first electrode layer, on the second electrode lay and in the interval；

The first via hole, exposure second electricity of the exposure first electrode layer are respectively formed in first encapsulated layer Second via hole of pole layer and the third via hole at the exposure interval.

Further, the method for formation detecting electrode layer includes: on the second substrate

Detecting electrode layer is formed on second substrate；

On second substrate and the second encapsulated layer, the thickness of second encapsulated layer are formed in the detecting electrode layer Greater than the thickness of the detecting electrode layer；

The 4th via hole that the detecting electrode layer is completely exposed is formed in second encapsulated layer.

Beneficial effects of the present invention: test section is arranged in sensor of the invention part, by electrical connection section by the first semiconductor Substrate is connected with detecting electrode layer, removes detection sample by test section, can not be detected test sample with effective protection senser element This pollution, degradation, to greatly improve the reliability of senser element, prolong the service life, improve the anti-interference energy of senser element Power.

Detailed description of the invention

What is carried out in conjunction with the accompanying drawings is described below, above and other aspect, features and advantages of the embodiment of the present invention It will become clearer, in attached drawing:

Fig. 1 is the side sectional view of the senser element of embodiment according to the present invention one；

Fig. 2 is the current-responsive figure when senser element of embodiment according to the present invention one detects object to be detected；

Fig. 3 a and Fig. 3 b is that the senser element of embodiment according to the present invention one and the anti-of the senser element of the prior art are done Immunity energy comparison diagram；

Fig. 4 is the flow chart of the production method of the senser element of embodiment according to the present invention two；

Fig. 5 is the flow chart of the step S100 of embodiment according to the present invention two；

Fig. 6 is the flow chart of the step S200 of embodiment according to the present invention two.

Specific embodiment

Hereinafter, with reference to the accompanying drawings to detailed description of the present invention embodiment.However, it is possible to come in many different forms real The present invention is applied, and the present invention should not be construed as limited to the specific embodiment illustrated here.On the contrary, providing these implementations Example is in order to explain the principle of the present invention and its practical application, to make others skilled in the art it will be appreciated that the present invention Various embodiments and be suitable for the various modifications of specific intended application.

In the accompanying drawings, for the sake of clarity, can exaggerate the shape and size of element, and identical label will always by For indicating the same or similar element.

Term " first ", " second " etc. herein can be used to describe various elements although will be appreciated that, these Element should not be limited by these terms.These terms are only used to distinguish an element with another element.