阅读说明：本技术 一种柔性纳米纤维氧化锌锡的场效应晶体管及其制备方法 (A kind of field effect transistor and preparation method thereof of flexible nano fiber oxidation zinc-tin ) 是由 赵天石 赵春 赵策洲 杨莉 于水长 于 2019-08-27 设计创作，主要内容包括：本发明公开了一种柔性纳米纤维氧化锌锡的场效应晶体管及其制备方法,包括上至下设置的顶部源电极层、顶部漏电极层,纳米纤维结构的载流子沟道层、介电层、底栅电极层和基底；所述纳米纤维结构的载流子沟道层为采用溶胶法制备的直径约100~300 nm的氧化锌锡细丝簇；制备方法包括：a)基底清洗；b)制备底栅电极层；c)制备氧化铪介电层；d)制备纳米纤维结构的载流子沟道层；e)制备顶部源电极层、顶部漏电极层。本案采用溶胶法制备纳米纤维(NF)细丝,操作简单方便,易控制分布与方向,成本低,有较高的均一性,可大规模工业应用；具有环保、高迁移率等优点；可应用于柔性可穿戴电路领域；整个器件呈透明色,具有较好的光学领域应用潜力。(The invention discloses a kind of field effect transistors and preparation method thereof of flexible nano fiber oxidation zinc-tin, including the top source electrode layer up to lower setting, top drain electrode layer, carrier channels layer, dielectric layer, bottom gate thin film layer and the substrate of nanofibrous structures；The carrier channels layer of the nanofibrous structures is the zinc-tin oxide filament cluster of about 100 ~ 300 nm of diameter prepared using sol method；Preparation method includes: a) substrate cleaning；B) bottom gate thin film layer is prepared；C) hafnium oxide dielectric layer is prepared；D) the carrier channels layer of nanofibrous structures is prepared；E) preparation top source electrode layer, top drain electrode layer.This case prepares nanofiber (NF) filament using sol method, and simple to operate, distribution easy to control and direction are at low cost, there is higher homogeneity, can large-scale industrial application；Have many advantages, such as environmental protection, high mobility；It can be applied to flexible wearable circuit field；The transparent color of entire device, has preferable optical field application potential.)

1. a kind of field effect transistor of flexible nano fiber oxidation zinc-tin, it is characterised in that: including up to the top of lower setting Source electrode layer, top drain electrode layer, carrier channels layer, dielectric layer, bottom gate thin film layer and the substrate of nanofibrous structures；It is described The carrier channels layer of nanofibrous structures is the zinc-tin oxide filament cluster of about 100 ~ 300 nm of diameter prepared using sol method.

2. a kind of field effect transistor of flexible nano fiber oxidation zinc-tin according to claim 1, it is characterised in that: institute Stating top source electrode layer, top drain electrode layer and bottom gate thin film layer is transparent indium tin oxide electrode, is made by aqua-solution method, thickness For 50 ~ 150 nm, channel width-over-length ratio is 10 ~ 20.

3. a kind of field effect transistor of flexible nano fiber oxidation zinc-tin according to claim 1, it is characterised in that: institute Giving an account of electric layer is the transparent Indium hafnium layer prepared based on solwution method, is made by aqua-solution method, with a thickness of 10 ~ 30 nm, annealing temperature It is 200 ~ 300 DEG C, unit-area capacitance is 120 ~ 170 nF cm^-2。

4. a kind of field effect transistor of flexible nano fiber oxidation zinc-tin according to claim 1, it is characterised in that: institute Stating substrate is clear flexible material, with a thickness of 400 ~ 600 μm.

5. a kind of preparation method of the field effect transistor of flexible nano fiber oxidation zinc-tin, it is characterised in that: specific preparation step Suddenly include:

A) substrate is cleaned

Substrate is cleaned three times, after third time is cleaned by ultrasonic, with being dried with nitrogen substrate；

B) bottom gate thin film layer is prepared

Substrate progress plasma cleaning patterning hydrophilic treated, 15 ~ 30 minutes；

The tin indium oxide precursor solution of bottom gate thin film layer utilizes In (NO₃)₃·3H₂O and SnCl₂It is dissolved in deionized water and being made The solution of 0.05-0.2mol/L is cleaned by ultrasonic 10-25 minutes；

Film-forming process are as follows: tin indium oxide precursor solution is grown on substrate using the method for spin coating, and is moved back using deep ultraviolet Ignition method is annealed at 200 ~ 300 DEG C and is made；Bottom gate thin film layer shape is strip；

C) hafnium oxide dielectric layer is prepared

The precursor solution of dielectric layer utilizes HfCl₄It is dissolved in deionized water, the concentration of solution is 0.3-0.6mol/L, and ultrasound is clear It washes 10 ~ 15 minutes；

Film-forming process is that the precursor solution of dielectric layer is grown on substrate and gate electrode using the method for spin coating, and is utilized deep Ultraviolet method for annealing is annealed at 200 ~ 300 DEG C and is made；Hafnium oxide dielectric layer is for transparence and with a thickness of 10 ~ 30 nm；

D) the carrier channels layer of nanofibrous structures is prepared

The precursor source colloidal sol of carrier channels layer is by SnCl₂And Zn (AC)₂Be dissolved in ethylene glycol monomethyl ether, dimethylformamide with And the in the mixed solvent of polyvinylpyrrolidone, the concentration of solution is 0.1-0.5mol/L, is stirred, stands, is cleaned by ultrasonic Afterwards, colloidal liquid is blown out using nitrogen；

It is by the precursor source colloidal sol of the carrier channels layer using painting brush along the side perpendicular to gate electrode at silk method To brushing on dielectric layer；Later under dark purple external exposure, 1-2.5 hour formation nanometer is heated with 200 ~ 300 DEG C of temperature Fiber filaments；

E) preparation top source electrode layer, top drain electrode layer

Substrate progress plasma cleaning patterning hydrophilic treated, 15 ~ 30 minutes；

Top source electrode layer and the tin indium oxide precursor solution of top drain electrode layer utilize In (NO₃)₃·3H₂O and stannous chloride SnCl₂It is dissolved in deionized water, the concentration of solution is 0.05-0.2mol/L, is cleaned by ultrasonic 10-25 minutes；

Film-forming process utilizes on the method growth and substrate top source electrode layer, top drain electrode layer of spin coating for the solution, and It is annealed and is made at 200 ~ 300 DEG C using deep ultraviolet method for annealing；Electrode shape is strip.

6. a kind of field effect transistor of flexible nano fiber oxidation zinc-tin according to claim 1, it is characterised in that: base Bottom is completely immersed in the beaker for holding deionized water, and the beaker is placed in acetone environment and carries out first time ultrasonic cleaning, 8 ~ 15 min；For the first time be cleaned by ultrasonic after, substrate is completely immersed in the beaker for holding dehydrated alcohol, by the beaker be placed in from It carries out being cleaned by ultrasonic for second in sub- water environment, 10 ~ 20 min；After second is cleaned by ultrasonic, the beaker is placed in deionization Third time ultrasonic cleaning, 5 ~ 10 min are carried out in water environment.

Technical field

The present invention relates to a kind of microelectronics technology, the field-effect of specifically a kind of flexible nano fiber oxidation zinc-tin is brilliant Body pipe and its preparation process based on sol method.

Background technique

In recent years, field effect transistor (FET) device higher and higher with demand of this people to advanced electronics Also gradually attract a large amount of research, and be considered as one of elemental device the most key in modern electronic devices application.

One-dimensional nano structure device, such as nanofiber (NF) etc., due to its unique electricity, optics, calorifics, machinery It learns and magnetic properties and the polynary application potential in terms of FET, light emitting diode, energy reserves, memory and sensor, mesh It is preceding to be known as research hotspot.NF structure FET channel layer is one or several fibers shape semiconductor nano filament, with conventional films knot The FET of structure is compared, and can effectively reduce the scattering of carrier, forms effective conducting channel.However, the traditional handicraft of NF is prepared, Such as: electrostatic spinning, evaporation, magnetic control method and nanometer combing all have certain defect, such as: uncontrollable fiber distribution, Substrate requirement is high, process costs are big etc..On the other hand, traditional organic matter NF semiconductor material often all has lower move Shifting rate and biggish toxicity, this also counteracts the development of NF technique.

Compared with traditional handicraft, colloidal sol spread coating described in this patent has in terms of precursor source and at the preparation of silk The advantages of simple process, annealing temperature be low, at low cost and controlled distribution, therefore can be applied in flexible substrate manufacture flexible Device and production cost is greatly reduced.At the same time, the more popular no indium metal oxide semiconductor material oxidation of utilization Zinc-tin (ZTO), can prepare the thin film transistor (TFT) of high mobility, high stability, low-work voltage.Simultaneously compared with organic matter, The material is more healthy, environmentally friendly.

Summary of the invention

Object of the present invention is to: the present invention is directed to prior art nanofiber (NF) structure field effect transistor (FET) no Foot provides a kind of NFFET and preparation method thereof for being based on zinc-tin oxide (ZTO) semiconductor, is able to satisfy the work of high-volume low cost Industry production requirement.

The technical scheme is that a kind of field effect transistor of flexible nano fiber oxidation zinc-tin, including under The top source electrode layer of setting, top drain electrode layer, carrier channels layer, dielectric layer, the bottom gate thin film layer of nanofibrous structures And substrate；The carrier channels layer of the nanofibrous structures is the oxidation of about 100 ~ 300 nm of diameter prepared using sol method Zinc-tin filament cluster.

Preferably, the top source electrode layer, top drain electrode layer and bottom gate thin film layer are transparent indium tin oxide electrode, by Aqua-solution method production, with a thickness of 50 ~ 150 nm, channel width-over-length ratio is 10 ~ 20.

Preferably, the dielectric layer is the transparent Indium hafnium layer prepared based on solwution method, is made by aqua-solution method, with a thickness of 10 ~ 30 nm, annealing temperature are 200 ~ 300 DEG C, and unit-area capacitance is 120 ~ 170 nF cm^-2。

Preferably, the substrate is clear flexible material, with a thickness of 400 ~ 600 μm.

A kind of preparation method of the field effect transistor of flexible nano fiber oxidation zinc-tin, specific preparation step include:

A) substrate is cleaned

Substrate is cleaned three times, after third time is cleaned by ultrasonic, with being dried with nitrogen substrate；

B) bottom gate thin film layer is prepared

Substrate progress plasma cleaning patterning hydrophilic treated, 15 ~ 30 minutes；

The tin indium oxide precursor solution of bottom gate thin film layer utilizes In (NO₃)₃·3H₂O and SnCl₂It is dissolved in deionized water and being made The solution of 0.05-0.2mol/L is cleaned by ultrasonic 10-25 minutes；

Film-forming process are as follows: tin indium oxide precursor solution is grown on substrate using the method for spin coating, and is moved back using deep ultraviolet Ignition method is annealed at 200 ~ 300 DEG C and is made；Bottom gate thin film layer shape is strip；

C) hafnium oxide dielectric layer is prepared

The precursor solution of dielectric layer utilizes HfCl₄It is dissolved in deionized water, the concentration of solution is 0.3-0.6mol/L, and ultrasound is clear It washes 10 ~ 15 minutes；

Film-forming process is that the precursor solution of dielectric layer is grown on substrate and gate electrode using the method for spin coating, and is utilized deep Ultraviolet method for annealing is annealed at 200 ~ 300 DEG C and is made；Hafnium oxide dielectric layer is for transparence and with a thickness of 10 ~ 30 nm；

D) the carrier channels layer of nanofibrous structures is prepared

The precursor source colloidal sol of carrier channels layer is by SnCl₂And Zn (AC)₂Be dissolved in ethylene glycol monomethyl ether, dimethylformamide with And the in the mixed solvent of polyvinylpyrrolidone, the concentration of solution is 0.1-0.5mol/L, is stirred, stands, is cleaned by ultrasonic Afterwards, colloidal liquid is blown out using nitrogen；

It is by the precursor source colloidal sol of the carrier channels layer using painting brush along the side perpendicular to gate electrode at silk method To brushing on dielectric layer；Later under dark purple external exposure, 1-2.5 hour formation nanometer is heated with 200 ~ 300 DEG C of temperature Fiber filaments；

E) preparation top source electrode layer, top drain electrode layer

Substrate progress plasma cleaning patterning hydrophilic treated, 15 ~ 30 minutes；

Top source electrode layer and the tin indium oxide precursor solution of top drain electrode layer utilize In (NO₃)₃·3H₂O and stannous chloride SnCl₂It is dissolved in deionized water, the concentration of solution is 0.05-0.2mol/L, is cleaned by ultrasonic 10-25 minutes；

Film-forming process utilizes on the method growth and substrate top source electrode layer, top drain electrode layer of spin coating for the solution, and It is annealed and is made at 200 ~ 300 DEG C using deep ultraviolet method for annealing；Electrode shape is strip.

Preferably, substrate is completely immersed in the beaker for holding deionized water, and the beaker is placed in acetone environment and is carried out It is cleaned by ultrasonic for the first time, 8 ~ 15 min；After being cleaned by ultrasonic for the first time, substrate is completely immersed in the beaker for holding dehydrated alcohol, The beaker is placed in deionized water environment and carries out second of ultrasonic cleaning, 10 ~ 20 min；It, will after second is cleaned by ultrasonic The beaker is placed in progress third time ultrasonic cleaning, 5 ~ 10 min in deionized water environment.

The invention has the advantages that

1) nanofiber (NF) filament is prepared using sol method, it is simple to operate, and can control distribution and direction, it realizes The NF device preparation of low cost, and homogeneity with higher, realize large-scale industrial application；

2) using the nanofiber (NF) of inorganic, metal oxide zinc-tin oxide (ZTO) preparation, it is fine that other organic nanos have been compared Tieing up (NF) has environmental protection, high mobility (> 10 cm²∙V^-1∙s^-1) the advantages that；

3) it is lower to be based on solwution method preparation cost for remaining each layer, and reduces annealing temperature using deep ultraviolet, grows device On a flexible substrate, it can be applied to flexible wearable circuit field.

4) the transparent color of entire device has preferable optical field application potential.

Detailed description of the invention

The invention will be further described with reference to the accompanying drawings and embodiments:

A kind of overlooking structure diagram of the field effect transistor of flexible nano fiber oxidation zinc-tin described in Fig. 1 this case；

Fig. 2 is a kind of cross section structure schematic diagram of the field effect transistor of flexible nano fiber oxidation zinc-tin described in this case；

Wherein: 101a, top source electrode layer；101b, top drain electrode layer；102, the carrier channels layer of nanofibrous structures； 103, dielectric layer；104, bottom gate thin film；105, substrate.

Specific embodiment