阅读说明：本技术 一种柔性薄膜太阳能电池及其制备方法 (A kind of flexible thin-film solar cell and preparation method thereof ) 是由 乔秀梅 于 2018-05-25 设计创作，主要内容包括：本发明提供了一种柔性薄膜太阳能电池,包括前面电极,减反射膜,石墨烯薄膜层,n型二维过渡金属硫族化合物薄膜,p型砷化镓薄膜层,背场层,背面电极,柔性支撑衬底；从柔性支撑衬底向上,依次设置背面电极、背场层、p型砷化镓薄膜层、n型二维过渡金属硫族化合物薄膜、石墨烯薄膜层、减反射膜和前面电极；所述n型二维过渡金属硫族化合物薄膜具有单层或多层结构。本发明还提供所述柔性薄膜太阳能电池的制备方法。本发明提出的柔性薄膜太阳能电池,采用二维过渡金属硫族化合物薄膜和砷化镓薄膜形成异质结,有利于展宽太阳能光谱的吸收,提高效率,且单层的二维过渡金属硫族化合物薄膜和GaAs均为直接带隙材料,相比间接带隙更利于光的吸收。(The present invention provides a kind of flexible thin-film solar cell, including front electrode, antireflective coating, graphene film layer, N-shaped two dimension Transition-metal dichalcogenide film, p-type gallium arsenide film layer, back surface field layer, rear electrode, flexible support substrates；It is upward from flexible support substrate, set gradually rear electrode, back surface field layer, p-type gallium arsenide film layer, N-shaped two dimension Transition-metal dichalcogenide film, graphene film layer, antireflective coating and front electrode；The N-shaped two dimension Transition-metal dichalcogenide film is with single or multi-layer structure.The present invention also provides the preparation methods of the flexible thin-film solar cell.Flexible thin-film solar cell proposed by the present invention, hetero-junctions is formed using two-dimentional Transition-metal dichalcogenide film and gallium arsenide film, be conducive to broaden the absorption of solar spectral, it improves efficiency, and the two-dimentional Transition-metal dichalcogenide film and GaAs of single layer are direct band gap material, compared to the absorption that indirect band gap is more conducive to light.)

1. a kind of flexible thin-film solar cell, which is characterized in that including front electrode, antireflective coating, graphene film layer, n Type two dimension Transition-metal dichalcogenide film, p-type gallium arsenide film layer, back surface field layer, rear electrode, flexible support substrate；

It is upward from the flexible support substrate, set gradually the rear electrode, back surface field layer, p-type gallium arsenide film layer, N-shaped two Tie up Transition-metal dichalcogenide film, graphene film layer, antireflective coating and front electrode；

The N-shaped two dimension Transition-metal dichalcogenide film is with single or multi-layer structure.

2. flexible thin-film solar cell according to claim 1, which is characterized in that the flexible support substrate is polyester Or polyimides material.

3. flexible thin-film solar cell according to claim 1, which is characterized in that the back surface field layer with a thickness of 5~ 20nm, the material of back surface field layer are InGaP (GaInP) or aluminum gallium arsenide (AlGaAs).

4. flexible thin-film solar cell according to claim 1, which is characterized in that the rear electrode and front electrode Material be selected from one of copper, gold, silver independently of each other, the front electrode is gate electrode.

5. flexible thin-film solar cell according to any one of claims 1 to 4, which is characterized in that the N-shaped two dimension mistake Cross metal chalcogenide compound film with a thickness of 1~10nm, the p-type gallium arsenide film layer with a thickness of 1000nm~ 3000nm。

6. flexible thin-film solar cell according to any one of claims 1 to 4, which is characterized in that the N-shaped two dimension mistake The material for crossing metal chalcogenide compound film is WS₂、MoS₂、MoSe₂One of or it is a variety of.

7. flexible thin-film solar cell according to any one of claims 1 to 4, which is characterized in that the graphene is thin Film layer is single or multi-layer structure, the graphene film layer with a thickness of 0.4~5nm.

8. a kind of preparation method of flexible thin-film solar cell, which is characterized in that comprising steps of

Step 1: rear electrode, back surface field layer, p-type gallium arsenide film layer are formed on flexible support substrate；

Step 2: single-layer or multi-layer N-shaped two dimension Transition-metal dichalcogenide film is set on p-type gallium arsenide film layer；

Step 3: graphene film layer is set on N-shaped two dimension Transition-metal dichalcogenide film；

Step 4: growing antireflective coating on graphene film layer；

Step 5: front electrode is grown on antireflective coating.

9. preparation method according to claim 8, which is characterized in that in the step 2, using chemical vapour deposition technique, Hydro-thermal method, liquid phase stripping method, mechanical stripping method or physical vaporous deposition grow single-layer or multi-layer N-shaped in the first substrate Two-dimentional Transition-metal dichalcogenide film is then transferred on p-type gallium arsenide film layer；First substrate be sapphire, Glass, Si/SiO₂Substrate or goldleaf；

The method being transferred on p-type gallium arsenide film layer includes but is not limited to: PMMA (polymethyl methacrylate) transfer Method, roll-to-roll transfer method or electrochemistry Bubbling method.

10. preparation method according to claim 8 or claim 9, which is characterized in that in the step 3, using chemical vapor deposition Product, physical gas-phase deposite method, SiC epitaxial growth method, chemical stripping method or adhesive tape stripping method grow graphite in the second substrate Alkene film is then transferred on the N-type two dimension Transition-metal dichalcogenide film；Second substrate be substrate of glass, Si substrate, Ni substrate or copper foil；

Wherein, the method being transferred on N-shaped two dimension Transition-metal dichalcogenide film includes but is not limited to: PMMA is (poly- Methyl methacrylate) transfer method, roll-to-roll transfer method, electrochemistry Bubbling method or hot soarfing be from tape method.

11. preparation method according to claim 9, which is characterized in that in the step 2, using chemical vapour deposition technique In Si/SiO₂Growing n-type MoS in substrate₂, then use PMMA (polymethyl methacrylate) transfer method by the N-shaped MoS₂Film It is transferred on the p-type gallium arsenide film.

12. preparation method according to claim 10, which is characterized in that in the step 3, using chemical vapour deposition technique Graphene film is grown on copper foil, and the graphene film is then transferred to the N-shaped two dimension mistake from tape method with hot soarfing It crosses on metal chalcogenide compound film.

Technical field

The invention belongs to energy technology fields, and in particular to a kind of photovoltaic device flexible and preparation method thereof.

Background technique

Solar power generation is increasingly becoming the mainstream technology of GENERATION MARKET as a kind of low-carbon renewable energy.With the sun The development of energy battery technology, from traditional crystal silicon technology to flexible thin-film battery, application range is constantly extending.Either too Empty or ground and wearable device, flexible thin-film battery are all widely used.But the flexibility of current mainstream Hull cell, haves the defects that certain, and flexible amorphous silicon battery efficiency is lower (~10%), flexible CIGS battery to steam compared with For sensitivity, more stringent, flexible GaAs higher cost is required to encapsulation, there are still effects for newest hotter flexible perovskite battery The problems such as rate stability.

Since graphene is found, since its excellent photoelectric characteristic causes the great interest of scientific research circle, but by In zero band gap of graphene, therefore significantly limit its application in terms of photoelectricity.And as a kind of novel two to grow up Tie up the Transition-metal dichalcogenide such as MoS of material₂, WS₂Etc. the characteristic for possessing most of similar graphenes, and possess simultaneously close Infrared and visible region self-energy band gap, it is most important that these materials have direct band gap in single layer.By graphene It is applied to photovoltaic art with two-dimentional transient metal sulfide, as a kind of completely new theory, provides flexible solar battery Widely application.

Summary of the invention

It is an object of the invention to propose novel flexible thin-film solar electricity for shortcoming existing for this field Pond, combines GaAs material and the respective advantage of two-dimensional material, and the hetero-junction thin-film solar cell of formation has stronger Anti-radiation type, higher transformation efficiency, it is relatively thin the features such as.

The present invention also provides a kind of preparation methods of flexible thin-film solar cell.

To achieve the above object, the technical solution of the present invention is as follows:

A kind of flexible thin-film solar cell, including front electrode, antireflective coating, graphene film layer, N-shaped two dimension transition Metal chalcogenide compound film, p-type gallium arsenide film layer, back surface field layer, rear electrode, flexible support substrate；

It is upward from the flexible support substrate, set gradually the rear electrode, back surface field layer, p-type gallium arsenide film layer, n Type two dimension Transition-metal dichalcogenide film, graphene film layer, antireflective coating and front electrode；

The N-shaped two dimension Transition-metal dichalcogenide film is with single or multi-layer structure.

The following are the preferred technical solution of the present invention.

Wherein, the flexible support substrate is polyester (PET) or polyimides (PI) material.

Wherein, the back surface field layer with a thickness of 5~20nm, the material of back surface field layer is InGaP (GaInP) or aluminium arsenide Gallium (AlGaAs).

Wherein, the material of the rear electrode and front electrode is selected from one of copper, gold, silver independently of each other, described Front electrode is gate electrode.

Wherein, the N-shaped two dimension Transition-metal dichalcogenide film with a thickness of 1~10nm, the p-type GaAs is thin Film layer with a thickness of 1000nm~3000nm.

Wherein, the material of the N-shaped two dimension Transition-metal dichalcogenide film is WS₂、MoS₂、MoSe₂One of.

Wherein, the graphene film layer is single or multi-layer structure, the graphene film layer with a thickness of 0.4~ 5nm。

The present invention also proposes a kind of preparation method of flexible thin-film solar cell, comprising steps of

Step 1: rear electrode, back surface field layer, p-type gallium arsenide film layer are formed on flexible support substrate；

Step 2: single-layer or multi-layer N-shaped two dimension Transition-metal dichalcogenide film is set on p-type gallium arsenide film layer；

Step 3: graphene film is set on N-shaped two dimension Transition-metal dichalcogenide film；

Step 4: growing antireflective coating on graphene film layer；

Step 5: front electrode is grown on antireflective coating.

Wherein, in the step 2, using chemical vapour deposition technique, hydro-thermal method, liquid phase stripping method, mechanical stripping method or Physical vaporous deposition grows single-layer or multi-layer N-shaped two dimension Transition-metal dichalcogenide film in the first substrate, then turns It moves on on p-type gallium arsenide film layer.First substrate includes but is not limited to Si/SiO₂Substrate, sapphire, copper foil, goldleaf etc..

The method being transferred on p-type gallium arsenide film layer includes but is not limited to: PMMA (polymethyl methacrylate) Transfer method, roll-to-roll transfer method or electrochemistry Bubbling method.

Wherein, in the step 3, using chemical vapor deposition, physical gas-phase deposite method, SiC epitaxial growth method, chemistry Stripping method or adhesive tape stripping method grow graphene film in the second substrate, are then transferred into the N-shaped two dimension Transition Metal Sulfur On compounds of group film；Wherein, second substrate is substrate of glass, Si substrate, Ni substrate or copper foil；

Wherein, the method being transferred on N-shaped two dimension Transition-metal dichalcogenide film includes but is not limited to: PMMA (polymethyl methacrylate) transfer method, roll-to-roll transfer method, electrochemistry Bubbling method or hot soarfing are from tape method.

Preferably, in the step 2, using chemical vapour deposition technique in Si/SiO₂Growing n-type MoS in substrate₂, then use The N-shaped MoS2 film is transferred on the p-type gallium arsenide film by PMMA (polymethyl methacrylate) transfer method.

It is highly preferred that graphene film is grown in copper foil using chemical vapour deposition technique, then with heat in the step 3 The graphene film is transferred on the N-shaped two dimension Transition-metal dichalcogenide film by stripping tape method.

The wherein optional GaAs substrate of step 1, other substrates are at high cost, and there are lattice matching issues.

Optionally, in the step 1, remove the GaAs substrate with epitaxial layer stripping means (ELO), by rear electrode/ Back surface field layer/p-type gallium arsenide film layer composite construction is transferred on flexible support substrate；

Wherein, the step 4 grows antireflective coating on graphene film layer using the method for magnetron sputtering.

The condition of the magnetron sputtering are as follows: sputtering target material is monocrystalline silicon target, and sputtering power is 100~150W, underlayer temperature It is 90~110 DEG C, reaction pressure is 0.1~0.5Pa.

Beneficial effects of the present invention are as follows:

(1) fexible film hybrid solar cell proposed by the present invention, using two-dimentional Transition-metal dichalcogenide film Hetero-junctions is formed with gallium arsenide film, is conducive to the absorption for broadening solar spectral, improves efficiency, and the two-dimentional transition gold of single layer Belong to chalcogenide film and gallium arsenide film is direct band gap material, compares indirect band gap, the more conducively absorption of light.

(2) this fexible film hybrid solar cell is using two-dimentional Transition-metal dichalcogenide film and gallium arsenide film Form hetero-junctions, before graphene film and two-dimentional Transition-metal dichalcogenide film it is with good light transmittance and conductive Property, it can make the battery that can make full use of solar energy, higher charge collection efficiency.

(3) this fexible film hybrid solar cell is using two-dimentional Transition-metal dichalcogenide film and gallium arsenide film Hetero-junctions is formed, because it is with film, the characteristics such as flexibility, application range is wider.

Detailed description of the invention

Fig. 1 is the structural schematic diagram of flexible thin-film solar cell of the invention.

In figure, 1, front electrode, 2, antireflective coating, 3, graphene film layer, 4, N-shaped two dimension Transition-metal dichalcogenide Film, 5, p-type gallium arsenide film layer, 6, back surface field layer, 7, rear electrode, 8, flexible support substrate.

Specific embodiment

To make the objectives, technical solutions, and advantages of the present invention clearer, below with reference to specific example, and referring to attached Figure, the present invention is described in more detail, but these embodiments are not necessarily to be construed as limitation of the present invention.

As shown in Figure 1, Fig. 1 is the flexible thin-film solar cell schematic diagram according to the embodiment of the present invention, the solar-electricity Pond includes front electrode, antireflective coating, graphene film layer, single-layer or multi-layer N-shaped two dimension Transition-metal dichalcogenide film, P-type gallium arsenide film layer, back surface field layer, rear electrode.Wherein, graphene film layer facilitates the collection of carrier, N-shaped two dimension mistake It crosses metal chalcogenide compound film layer and p-type gallium arsenide film layer constitutes hetero-junctions, carry out light absorption, generate electron hole pair.

Based on flexible thin-film solar cell shown in FIG. 1, it is prepared for Cu grid/antireflective coating/graphene film layer/n Type two dimension Transition-metal dichalcogenide film layer/GaAs (GaAs) film layer/AlGaAs back surface field layer/Cu back electrode, specifically The following steps are included:

Step 1: rear electrode, back surface field layer, p-type GaAs film layer are formed on flexible support substrate；

Step 2: single-layer or multi-layer N-shaped two dimension Transition-metal dichalcogenide film is set in p-type GaAs film layer；

Step 3: graphene film is set on N-shaped two dimension Transition-metal dichalcogenide film；

Step 4: growing antireflective coating on graphene film layer；

Step 5: front electrode is grown on antireflective coating.

Wherein, during MOCVD grown epitaxial layer, III group gas source is respectively trimethyl indium (TMGa), trimethyl gallium (TMIn), trimethyl aluminium (TMAl)；V race gas source is respectively arsine (AsH₃), phosphine (PH₃)；N type dopant is SiH₄, H₂Se；p Type dopant is DEZn；With the H by the purification of palladium diffuser₂Gas is carrier gas (purity reaches 6 9).

Wherein, N-shaped two dimension Transition-metal dichalcogenide film includes but is not limited to molybdenum disulfide (MoS₂), tungsten disulfide (WS₂)、MoSe₂Deng.

Wherein, two-dimentional Transition-metal dichalcogenide film and graphene film pass through transfer CVD growth method, including but not It is limited to PMMA (polymethyl methacrylate) transfer method, roll-to-roll transfer method, electrochemistry Bubbling method etc..

Below by the operation of specific implementation example, the invention will be described in further detail, but the present invention not only limits to In following embodiment.

Unless otherwise instructed, the means used in specification are techniques known in the art means.