阅读说明：本技术 自振荡除霜设备以及其操作方法 (Self-oscillation defrosting equipment and its operating method ) 是由 P·M·J·皮埃尔 L·莫金 J·西蒙 于 2019-09-18 设计创作，主要内容包括：本公开涉及自振荡除霜设备以及其操作方法。一种热增加系统包括腔、安置在所述腔中的第一电极、安置在所述腔中的第二电极以及产生射频信号的自振荡器电路,所述射频信号被转换成通过所述第一电极和所述第二电极辐射到所述腔中的电磁能量。所述自振荡电路包括所述第一电极和所述第二电极。在一个实施例中,所述第一电极是电容器结构中的第一板,并且所述第二电极是所述电容器结构中的第二板。所述腔和容纳在所述腔内的负载作为所述电容器结构的电容器电介质操作。所述自振荡器电路的谐振频率至少部分地由所述电容器结构的电容值确定。(This disclosure relates to self-oscillation defrosting equipment and its operating method.A kind of hot increase system includes the self-oscillator circuit of chamber, the first electrode being placed in the chamber, the second electrode being placed in the chamber and generation radiofrequency signal, and the radiofrequency signal is converted into the electromagnetic energy being radiated in the chamber by the first electrode and the second electrode.The self-oscillating circuit includes the first electrode and the second electrode.In one embodiment, the first electrode is the first plate in capacitor arrangement, and the second electrode is the second plate in the capacitor arrangement.The chamber and the load accommodated in the cavity are operated as the capacitor dielectric of the capacitor arrangement.The resonance frequency of the self-oscillator circuit is at least partly determined by the capacitance of the capacitor arrangement.)

1. a kind of hot increase system characterized by comprising

Capacitor arrangement, the capacitor arrangement include capacitor dielectric and first capacitor device plate and the second condenser armature, The capacitor dielectric includes the chamber for accommodating load, wherein the first capacitor device plate is disposed upon the electricity in the chamber Pole；And

Self-oscillator circuit, the self-oscillator circuit includes resonance circuit, and the resonance circuit is configured to corresponding to institute Generation radio frequency (RF) signal under the output frequency of the resonance frequency of resonance circuit is stated, wherein the resonance circuit includes the capacitor Device structure.

2. hot increase system according to claim 1, which is characterized in that the resonance circuit further comprises inductor, Wherein the first end of the inductor is directly connected to the first capacitor device plate.

3. hot increase system according to claim 2, which is characterized in that it further comprise contained structure, the receiving knot Structure includes the chamber, and wherein at least part of the contained structure forms second capacitor of the capacitor arrangement Device plate.

4. hot increase system according to claim 3, which is characterized in that the first capacitor device of the capacitor arrangement Plate is coupled to the first end of the inductor, and second condenser armature of the capacitor arrangement is coupled to ground connection section Point.

5. hot increase system according to claim 4, which is characterized in that the resonance circuit includes the second capacitor, Described in the first end of the second capacitor be coupled to the inductor, and the second end of second capacitor be coupled to it is described Ground nodes.

6. the hot increase system according to any one of claim 2 to 5, which is characterized in that it further comprise transformer, institute Transformer is stated with the first winding and the second winding, wherein the first capacitor device plate of the capacitor arrangement is electrically coupled to institute The first end of the first winding is stated, second condenser armature of the capacitor arrangement is electrically coupled to the second of first winding End, and the inductor is electrically coupled to second winding of the transformer.

7. hot increase system according to claim 6, which is characterized in that the ratio of winding of the transformer is one to one.

8. according to hot increase system described in any one of preceding claim, which is characterized in that further comprise pulse width Modulation power source, the pulse width modulation power are connected to the self-oscillator circuit, and the wherein pulse width modulation The duty ratio of power supply is at least partly determined by the temperature of the type of the load, the weight of the load or the load.

9. a kind of hot increase system characterized by comprising

Chamber；

First electrode, the first electrode are placed in the chamber；

Second electrode, the second electrode are placed in the chamber；And

Self-oscillator circuit, the self-oscillator circuit generate radiofrequency signal, and the radiofrequency signal is converted by described the One electrode and the second electrode are radiated the electromagnetic energy in the chamber, the self-oscillating circuit include the first electrode and The second electrode.

10. a kind of method for operating hot increase system, which is characterized in that the described method includes:

Electric signal is supplied from power supply to self-oscillator circuit, the self-oscillator circuit includes resonance circuit, the resonance circuit The self-oscillator circuit is set to generate radio frequency (RF) signal in the case where corresponding to the output frequency of resonance frequency of the resonance circuit, Wherein the resonance circuit includes capacitor arrangement, and the capacitor arrangement includes capacitor dielectric and first capacitor device plate With the second condenser armature, the capacitor dielectric includes the chamber for accommodating load, wherein the first capacitor device plate is peace Set the electrode in the chamber；

Detect exit criteria；And

The power supply is set to stop supplying the electric signal to the self-oscillator circuit.

Technical field

The embodiment of theme as described herein relates generally to the equipment to defrost using radio frequency (RF) energy to load And method.

Background technique

The conventional defrosting of condenser type food (or defrosting) system includes the large-scale plane electrode being contained in heating compartment.In After being placed between electrode by food load and make electrode and food load contact, supply low-power electromagnetic energy to electrode so that Food load gently heats up.When thawing during food is supported on defrosting, the impedance of food load changes.Therefore, it is transmitted to The power of food load can also change during defrosting.Holding for defrosting operation for example can be determined based on the weight of food load The continuous time, and timer can be used to control the stopping of operation.

Although good defrosting can be obtained using such system as a result, still the dynamic change of food load impedance may The defrosting efficiency for causing food to load is low.It is desirable that be used to defrost to food load (or other types of load) Device and method, the device and method can carry out efficient and uniform defrosting to entire load.

Summary of the invention

According to the first aspect of the invention, a kind of hot increase system is provided, comprising:

Capacitor arrangement, the capacitor arrangement include capacitor dielectric and first capacitor device plate and the second capacitor Plate, the capacitor dielectric includes the chamber for accommodating load, wherein the first capacitor device plate is disposed upon in the chamber Electrode；And

Self-oscillator circuit, the self-oscillator circuit includes resonance circuit, and the resonance circuit is configured in correspondence Radio frequency (RF) signal is generated under the output frequency of the resonance frequency of the resonance circuit, wherein the resonance circuit includes described Capacitor arrangement.

In one or more embodiments, the resonance circuit further comprises inductor, wherein the of the inductor One end is directly connected to the first capacitor device plate.

In one or more embodiments, the hot increase system further comprises contained structure, the contained structure packet Containing the chamber, and wherein, at least part of the contained structure forms second capacitor of the capacitor arrangement Plate.

In one or more embodiments, the first capacitor device plate of the capacitor arrangement is coupled to the inductor First end, and second condenser armature of the capacitor arrangement is coupled to ground nodes.

In one or more embodiments, the resonance circuit includes the second capacitor, wherein second capacitor First end is coupled to the inductor, and the second end of second capacitor is coupled to the ground nodes.

In one or more embodiments, the hot increase system further comprises transformer, and the transformer has the One winding and the second winding, wherein the first capacitor device plate of the capacitor arrangement is electrically coupled to the of first winding One end, second condenser armature of the capacitor arrangement are electrically coupled to the second end of first winding, and the electricity Sensor is electrically coupled to second winding of the transformer.

In one or more embodiments, the ratio of winding of the transformer is one to one.

In one or more embodiments, the hot increase system further comprises pulse width modulation power, the arteries and veins It rushes width modulation power and is connected to the self-oscillator circuit, and wherein the duty ratio of the pulse width modulation power is at least Partly determined by the temperature of the type of the load, the weight of the load or the load.

According to the second aspect of the invention, a kind of hot increase system is provided, comprising:

Chamber；

First electrode, the first electrode are placed in the chamber；

Second electrode, the second electrode are placed in the chamber；And

Self-oscillator circuit, the self-oscillator circuit generate radiofrequency signal, and the radiofrequency signal, which is converted into, passes through institute It states first electrode and the second electrode is radiated electromagnetic energy in the chamber, the self-oscillating circuit includes first electricity Pole and the second electrode.

In one or more embodiments, the first electrode is the first plate in capacitor arrangement, the second electrode It is the second plate in the capacitor arrangement, the load of the chamber and receiving in the cavity is the capacitor of the capacitor arrangement Device dielectric, and capacitance of the resonance frequency of the self-oscillator circuit at least partly by the capacitor arrangement is true It is fixed.

In one or more embodiments, the self-oscillator circuit includes inductor, and the system is further wrapped Include transformer, wherein first plate and second plate of the capacitor arrangement be electrically coupled to the first of the transformer around Group, and the inductor is electrically coupled to the second winding of the transformer.

In one or more embodiments, the ratio of winding of the transformer is one to one.

In one or more embodiments, the system further comprises pulse width modulation power, the pulse width Modulation power source is connected to the self-oscillator circuit, and wherein the duty ratio of the pulse width modulation power is at least partly It is determined by the temperature of the type of the load, the weight of the load or the load.

In one or more embodiments, the frequency range of the radiofrequency signal is 10 hertz to 100 megahertzs.

According to the third aspect of the invention we, a kind of method operating hot increase system is provided, which comprises

Electric signal is supplied from power supply to self-oscillator circuit, the self-oscillator circuit includes resonance circuit, the resonance Circuit makes the self-oscillator circuit generate radio frequency (RF) in the case where corresponding to the output frequency of resonance frequency of the resonance circuit Signal, wherein the resonance circuit includes capacitor arrangement, the capacitor arrangement includes capacitor dielectric and the first electricity Container panel and the second condenser armature, the capacitor dielectric includes the chamber for accommodating load, wherein the first capacitor device Plate is disposed upon the electrode in the chamber；

Detect exit criteria；And

The power supply is set to stop supplying the electric signal to the self-oscillator circuit.

These and other aspects of the invention will be according to embodiment described hereinafter it is clear that and referring to these realities Example is applied to be clear from.

Detailed description of the invention

When considering in conjunction with the following drawings, can be obtained to theme more by reference to specific embodiment and claim It is fully understood by, wherein running through attached drawing, similar appended drawing reference refers to similar element.

Fig. 1 is the perspective view of defrosting utensil according to example embodiment.

Fig. 2 be include except defrosting system other examples embodiment freezer/freezer utensil perspective view.

Fig. 3 is the simplified block diagram of uneven defrosting equipment according to example embodiment.

Fig. 4 is the schematic diagram for describing the example self-tuning and self-oscillating circuit of the embodiment that can be incorporated to defrosting equipment.

Fig. 5 is the signal for describing the embodiment of a part for the RF signal source that can be incorporated to the embodiment except defrosting system Figure.

Fig. 6 is the simplified block diagram according to the balance defrosting equipment of another example embodiment.

Fig. 7 is to describe showing for the embodiment that can be incorporated to balance except a part of the RF signal source of the embodiment of defrosting system It is intended to.

Fig. 8 is flow chart of the operation except the method for the embodiment of defrosting system, wherein the defrosting system includes self-oscillation letter Number source.

Fig. 9 A-9D be description indicate power supply output voltage and except defrosting system bias circuitry waveform curve Figure.

Specific embodiment

Following specific embodiments be merely illustrative in itself and be not intended to be limited to theme embodiment or this The application and use of kind embodiment.When as used herein, word " exemplary " and " example/example (example) " mean " to use Make example, example or explanation ".Be described herein as exemplary or example any embodiment be not necessarily to be construed as it is excellent Choosing or be better than other embodiments.In addition, being not intended to constrained in previous technical field, background technique or following tool Presented in body embodiment any represented or the theory implied.

Embodiment of the subject matter described herein is related to the solid-state that can be incorporated in separate device or other systems defrosting and sets It is standby.As follows to be described more fully, the embodiment of solid-state defrosting equipment includes that " imbalance " defrosting equipment is set with " balance " It is both standby.For example, using being placed in chamber and being configured to receive the first electrode with transmission RF signal and be placed in chamber In ground connection second electrode implementation example " imbalance " remove defrosting system.In contrast, using the first electrode being placed in chamber Defrosting system is removed with second electrode implementation example " balance ", wherein the first electrode and second electrode receive and radiation balance RF Signal.

In general, term " defrosting " means that the temperature liter of load (for example, food load or other types of load) will be freezed Height is to loading the temperature (for example, 0 degree Celsius or close to 0 degree Celsius of temperature) no longer freezed.As it is used herein, term The thermal energy or temperature that " defrosting " broadly means load (for example, food load or other types of load) to load by mentioning The increased process for RF power.Therefore, in various embodiments, can any initial temperature (for example, 0 degree Celsius with Any initial temperature upper or below) under load is executed " defrosting operates ", and can be higher than initial temperature it is any most Stop defrosting operation under finishing temperature (e.g., including in the final temperature of 0 degree Celsius of above and below).That is, this paper institute " the defrosting operation " of description and " removing defrosting system " can alternatively be referred to as " heat increases operation " and " hot increase system ".Term " defrosting " is not necessarily to be construed as being confined to application of the invention the temperature for freezing load can only be increased to 0 degree Celsius or close The method or system of 0 degree Celsius of temperature.

Fig. 1 be according to example embodiment except defrosting system 100 perspective view.Except defrosting system 100 includes defrosting 110 (example of chamber Such as, the chamber 660 of the chamber 360 of Fig. 3, Fig. 6), control panel 120, one or more radio frequency (RF) signal source is (for example, the RF of Fig. 3 believes Number source 320, Fig. 6 RF signal source 620), power supply (for example, power supply 626 of the power supply 326 of Fig. 3, Fig. 6), 170 (example of first electrode Such as, the electrode 640 of the electrode 340 of Fig. 3, Fig. 6), second electrode 172 (for example, electrode 650 of Fig. 6) and system controller (for example, system controller 612 of the system controller 312 of Fig. 3, Fig. 6).Defrost chamber 110 by top cavity wall 111, bottom cavity wall 112, The inner surface of the inner surface and door 116 of side chamber wall 113,114 and rear cavity wall 115 limits.In the case where door 116 is closed, defrosting Chamber 110 limits closed air chamber.As it is used herein, term " air chamber " can mean to accommodate air or other gases The closed area of (for example, defrosting chamber 110) or volume.

According to " imbalance " embodiment, first electrode 170 is disposed adjacent to cavity wall (for example, roof 111), first electrode 170 are electrically isolated with remaining cavity wall (for example, wall 112-115 and door 116), and remaining cavity wall is grounded.In such configuration, System can simply be modeled as capacitor, and wherein first electrode 170 is used as a conductive plate (or electrode), be grounded cavity wall (example Such as, wall 112-115) it is used as the second conductive plate (or electrode), and air chamber (including any load wherein accommodated) is used as the Dielectric between one conductive plate and the second conductive plate.Although and it is not shown in FIG. 1, can also include in system 100 Non-conductive barrier (for example, barrier 662 of the barrier 362 of Fig. 3, Fig. 6), and non-conductive barrier can be used for load and bottom cavity Wall 112 is electrical and physically separates.Although Fig. 1 shows first electrode 170 close to roof 111, such as alternative electrode Shown in 172-175, first electrode 170 alternatively can be close to any wall in other wall 112-115.

According to " balance " embodiment, first electrode 170 is disposed adjacent to the first cavity wall (for example, roof 111), the second electricity Pole 172 is disposed adjacent to opposite the second cavity wall (for example, bottom wall 112), and first electrode 170 and second electrode 172 with Remaining cavity wall (for example, wall 113-115 and door 116) is electrically isolated.In such configuration, system can also simply be modeled as electricity Container, wherein first electrode 170 is used as a conductive plate (or electrode), and second electrode 172 is used as the second conductive plate (or electrode), And air chamber (including any load wherein accommodated) is used as the dielectric between the first conductive plate and the second conductive plate.Although And it is not shown in FIG. 1, but can also include non-conductive barrier (for example, barrier 662 of Fig. 6) in system 100, and described Non-conductive barrier can be used for load electrical with second electrode 172 and bottom cavity wall 112 and physically separate.Although Fig. 1 is shown First electrode 170 is close to roof 111 and second electrode 172 is close to bottom wall 112, but first electrode 170 and second electrode 172 alternatively can be close to other opposite walls (for example, first electrode can be the electrode 173 and second close to wall 113 Electrode can be the electrode 174 close to wall 114).

According to one embodiment, during the operation except defrosting system 100, user's (not shown) can be in defrosting chamber 110 It places one or more loads (for example, food and/or liquid) and optionally can provide specified one via control panel 120 The input of the characteristic of a or multiple loads.For example, specified characteristic may include the approximate weight of load.In addition, specified is negative Carrying characteristic can indicate to form one or more materials of load (for example, meat, bread, liquid).In an alternative embodiment, Load characteristic can be obtained by certain other mode, such as the bar code or upper or embedding from load packed by scanning load The RFID marker entered in load receives radio frequency identification (RFID) signal.No matter which kind of mode, as will be described in further detail later, Information about such load characteristic can enable system controller control RF heating process.

In order to start defrosting operation, user can provide input via control panel 120.In response, system controller Make one or more RF signal sources (for example, RF signal source 320 of Fig. 3, the RF signal source 620 of Fig. 6) in uneven embodiment RF signal is supplied or in balanced embodiment to both first electrode 170 and second electrode 172 supply RF letter to first electrode 170 Number, and electromagnetic energy is correspondingly radiated in defrosting chamber 110 by one or more electrodes.Electromagnetic energy increases the thermal energy of load (that is, electromagnetic energy makes load heat up).

During the operation that defrosts, the impedance (and the therefore total input impedance of chamber 110 plus load) of load is in load Thermal energy changes when increasing.Impedance variations change absorption of the RF energy into load.

As it is used herein, term " tank circuit ", which refers to using magnetic resonance to store charge and generate, has electromagnetism The circuit of the output signal of frequency.In general, tank circuit includes the inductance coil or inductor being connected in parallel with capacitor.Inductance The inductance value of device and the capacitance of capacitor have determined the frequency of oscillation generated by tank circuit.

According to one embodiment, implement RF signal source (for example, the RF signal source 320 of Fig. 3, Fig. 6 using self-oscillating circuit RF signal source 620), the self-oscillating circuit is configured to vibrate (simultaneously under the frequency at least partly determined by load impedance And thus generate output RF signal).Specifically and as described herein, the tank circuit for being incorporated to the oscillator of RF signal source is incorporated to Impedance of the chamber 110 plus load.In this way, during the operation except defrosting system 100 and even when the impedance of load becomes at any time When change, the output frequency of the oscillator changes, to be incorporated to chamber 110 plus the resonance of the tank circuit of load always Output signal under frequency.By operating at the resonant frequency fx, the RF signal generated by RF signal source enables RF energy is maximum to turn It moves on in load, or even when being defrosted to load and changing impedance.In this way, of the invention except defrosting system 100 RF signal source self-tuning is to optimize the power being transferred in load.

The defrosting system 100 that removes of Fig. 1 is implemented as back punching type utensil.In a further embodiment, except defrosting system 100 can be with Including the components and functionality for executing microwave cooking operation.Alternatively, except the component of defrosting system can be incorporated to other classes In the system or utensil of type.For example, Fig. 2 is to include the freezer/freezer for removing the other examples embodiment of defrosting system 210,220 The perspective view of utensil 200.More specifically, except defrosting system 210 is shown as being incorporated in the freezer compartment 212 of system 200, and And except defrosting system 220 is shown as being incorporated in the freezer compartment 222 of system.Actual freezer/freezer utensil may incite somebody to action Including removing the only one in defrosting system 210,220, but both show in Fig. 2 compactly to convey the two embodiments.

Similar to removing defrosting system 100, except each of defrosting system 210,220 include defrosting chamber, control panel 214, 224, one or more RF signal source (for example, RF signal source 320 of Fig. 3, the RF signal source 620 of Fig. 6), power supply are (for example, Fig. 3 Power supply 326, Fig. 6 power supply 626), first electrode (for example, electrode 640 of the electrode 340 of Fig. 3, Fig. 6), second electrode 172 (for example, electrode 650 of the contained structure 366 of Fig. 3, Fig. 6) and system controller (for example, the system controller 312 of Fig. 3, The system controller 612 of Fig. 6).For example, defrosting chamber can be by the inner surface and pumping of the bottom wall of drawer, side wall, antetheca and rear wall Drawer is limited in the inside top surface of the fixed shelf 216,226 of its lower slider.Under drawer is fully slid into shelf, take out Chamber limit is closed air chamber by drawer and shelf.In various embodiments, except the components and functionality of defrosting system 210,220 can be with It is substantially the same with the components and functionality of defrosting system 100 is removed.

In addition, according to one embodiment, except each of defrosting system 210,220 respectively can be with freezer compartment 212 Or freezer compartment 222 has enough thermal communications, system 210 is placed in the freezer compartment 212, and system 220 is placed in In the freezer compartment 222.In such an embodiment, after defrosting operation is completed, load can be maintained to safe temperature It spends (that is, the temperature for preventing food spoilage), is removed from system 210,220 until that will load.More specifically, by based on cold Frozen storehouse except defrosting system 210 complete defrosting operation when, accommodate defrosting load chamber can with 212 thermal communication of freezer utensil, and And if load is removed from chamber not in time, load can be with refreeze.Similarly, by removing defrosting system based on freezer 220 complete defrosting operation when, accommodate defrosting load chamber can with 222 thermal communication of freezer compartment, and if load not and When removed from chamber, then load defrosting state can be maintained under the environment temperature in refrigerating chamber compartment 222.

Based on description herein, it will be understood by those skilled in the art that having except the embodiment of defrosting system can also be incorporated to In the system or utensil of other configurations.Therefore, in separate device, micro-wave oven utensil, freezer and refrigerating chamber except defrosting system The embodiment above is not meant to the system that the purposes of embodiment is only limitted to those types.

Although being answered except defrosting system 100,200 is shown as its component especially with respect to having relative orientation each other Understand, all parts can also be different direction.In addition, the physical configuration of all parts may be different.For example, control panel 120,214,224 can have more, less or different user interface elements and/or user interface elements can be differently Arrangement.In addition, although substantially cuboidal defrosting chamber 110 is shown in Fig. 1, however, it is understood that in other embodiments, removing White chamber can have different shapes (for example, cylinder etc.).In addition, except defrosting system 100,210,220 may include Fig. 1, Not specifically depicted additional components (for example, fan, fixation or swivel plate, pallet, cord etc.) in Fig. 2.

Fig. 3 be imbalance according to example embodiment except defrosting system 300 (for example, Fig. 1 except defrosting system 100, Fig. 2 are removed Defrosting system 210,220) simplified block diagram.In one embodiment, except defrosting system 300 include RF subsystem 310, defrosting chamber 360, User interface 380, system controller 312, RF signal source 320, power supply and bias circuitry 326, electrode 340 and contained structure 366.In addition, in other embodiments, except defrosting system 300 may include one or more temperature sensors, one or more red (IR) sensor and/or one or more weight sensor 390 outside, but can be with some or all of in these sensor elements In being not included in.It should be understood that for illustrative purposes and for ease of description, Fig. 3 is to simplify expression except defrosting system 300, And practical embodiment may include other devices and component to provide additional function and feature, and/or except defrosting system 300 can To be a part of bigger electrical system.

User interface 380 can correspond to control panel (for example, the control panel 214 of the control panel 120 of Fig. 1, Fig. 2, 224), for example, the control panel is allowed users to except defrosting system 300 is provided about defrosting operation (for example, wait the load that defrosts Characteristic etc.), the input of the parameter of starting and cancel button, mechanical control (for example, door/drawer unlatching) etc..In addition, with The user that family interface may be configured to provide the state of instruction defrosting operation can perceive output (for example, count down timer, instruction The audible sound of the completion of the progress of operation that defrosts or the visable indicia of completion and/or instruction defrosting operation) and other information.

Except some embodiments of defrosting system 300 may include one or more temperature sensors, one or more IR sensing Device and/or one or more weight sensors 390.One or more temperature sensors and/or one or more IR sensor can To be positioned in the position that be sensed the temperature of the load in chamber 360 364 can during the operation that defrosts.It is when being supplied to Unite controller 312 when, temperature information enables system controller 312 to change the power of the RF signal supplied by RF signal source 320 (for example, the biasing provided by control by power supply and bias circuitry 326 and/or supply voltage) and/or determine defrosting behaviour Make when to terminate.One or more weight sensors can be positioned under load 364 and be configured to system control Device 312 processed provides the estimated value of the weight of load 364.This information, which can be used, in system controller 312 is for example believed to determine by RF It is expected the power level for the RF signal that number source 320 is supplied and/or determine the general duration that defrosting operates.

In one embodiment, RF subsystem 310 include system controller 312, RF signal source 320 and power supply and partially Circuits system 326.System controller 312 may include one or more general or specialized processors (for example, microprocessor, Microcontroller, specific integrated circuit (ASIC) etc.), volatibility and or nonvolatile memory is (for example, random access memory Device (RAM), read-only memory (ROM), flash memory, various registers etc.), one or more communication bus and other components.Root According to one embodiment, system controller 312 is coupled to user interface 380, RF signal source 320, power supply and bias circuitry 326 And sensor 390 (if including).System controller 312 can be believed to power supply and bias circuitry 326 and RF Number source 320 provides control signal.

The chamber 360 that defrosts includes capacitor defrosting arrangement, and capacitor defrosting arrangement has through separated first flat of air chamber Plate electrodes and the second parallel-plate electrode can place load 364 to be defrosted in the air chamber.For example, first electrode 340 It can be positioned on air chamber side (for example, top), and second electrode can be provided by a part of contained structure 366 (or being provided by the second grounding electrode, be not shown).More specifically, contained structure 366 may include bottom wall, roof and side wall, The bottom wall, the roof and the side wall may include the door of contained structure 366 or a part of hatch, the bottom wall, institute The inner surface for stating roof and the side wall limits chamber 360 (for example, chamber 110 of Fig. 1).According to one embodiment, chamber 360 can be by Sealing (for example, with door 116 of Fig. 1 or by sliding the drawer being closed under the shelf 216,226 of Fig. 2) is to be contained in defrosting behaviour The electromagnetic energy being introduced into during work in chamber 360.System 300 may include ensuring to be sealed in intact during defrosting operates one or more A mutual interlocking gear.If one or more indicating sealings in mutual interlocking gear are broken, system controller 312 can stop removing Frost operation.According to one embodiment, contained structure 366 is at least partly formed by conductive material, and the one of contained structure 366 A or multiple current-carrying parts can be grounded.Alternatively, contained structure 366 corresponds to the chamber 360 opposite with electrode 340 At least part on the chamber surface (for example, bottom surface of chamber 360) on side can be formed from conductive materials and be grounded.No matter which Kind mode, contained structure 366 (or part of contained structure 366 at least parallel with first electrode 340) are both used as capacitor defrosting The second electrode of arrangement.In order to avoid directly contacting between load 364 and the ground connection bottom surface of chamber 360, non-conductive barrier 362 It can be positioned above the bottom surface of chamber 360.

Substantially, defrosting chamber 360 includes capacitor defrosting arrangement, and capacitor defrosting arrangement has the separated by air chamber One parallel-plate electrode 340 and the second parallel-plate electrode 366 can place load 364 to be defrosted in the air chamber.At one In embodiment, first electrode 340 is located in the apparent surface that electrode 340 Yu contained structure 366 are limited in contained structure 366 The distance between (for example, the bottom surface for being used as second electrode) 352, wherein distance 352 makes chamber 360 become sub-resonant cavity.

In various embodiments, distance 352 is in the range of about 0.10 meter to about 1.0 meters, although distance can also be smaller Or it is bigger.According to one embodiment, distance 352 is less than a wavelength of the RF signal that RF subsystem 310 generates.In other words, As described above, chamber 360 is sub-resonant cavity.In some embodiments, distance 352 is less than about half of a wavelength of RF signal. In other embodiments, distance 352 is less than the about a quarter of a wavelength of RF signal.In still other embodiments, distance 352 are less than about 1/8th of a wavelength of RF signal.In still other embodiments, distance 352 is less than one of RF signal About 1/the 50 of wavelength.In still other embodiments, distance 352 is less than about 1/the 100 of a wavelength of RF signal.

Operating frequency and distance 352 between electrode 340 and contained structure 366 are selected to limit sub- resonance inner cavity In the case where 360, first electrode 340 and contained structure 366 are capacitively coupled.More specifically, first electrode 340 can be with class Push away the first plate for capacitor, the second plate that contained structure 366 can analogize for capacitor, and load 364, barrier 362 with And the air in chamber 360 can analogize for capacitor dielectric.Therefore, first electrode 340 alternatively herein can be by Referred to as " anode ", and contained structure 366 alternatively can be referred to as " cathode " herein.

Substantially, the alternating voltage heating chamber of first electrode 340 and 366 both ends of contained structure associated with RF signal Load 364 in 360.According to various embodiments, RF subsystem 310 is configured to generate RF signal in electrode 340 and receiving It is generated between structure 366 in one embodiment in the range of about 90 volts to about 3,000 volts or in another embodiment In at about 3000 volts arrive about 10, the voltage in the range of 000 volt, although system also may be configured to electrode 340 with Lower or higher voltage is generated between contained structure 366.

First electrode 340 is electrically coupled to RF signal source 320 via conducting transmission path 328.It is conductive according to one embodiment Transmission path 328 is " imbalance " path, and the imbalance path is configured to carry uneven RF signal (that is, relative to connecing The single RF signal of ground reference).In some embodiments, one or more connectors (are not shown, but respectively have public connector Part and female connectors part) it can be electrically coupled along transmission path 328, and one of the transmission path 328 between connector Part may include coaxial cable or other suitable connector.

In response to the control signal provided by system controller 312 by connection 314, RF signal source 320 is configured to produce Raw electric oscillation signal.In various embodiments, it can control RF signal source 320 to generate different capacity level and/or different frequencies The oscillator signal of rate.For example, RF signal source 320 can occur in about 10.0 megahertzs (MHz) to about 100MHz and/or about 100MHz The signal vibrated in the range of to about 3.0 gigahertzs (GHz).

In the fig. 3 embodiment, RF signal source 320 may include generating the output signal of amplification in transmission path 328 Single amplifier stage or multiple amplifier stages, such as driver amplifier grade and final amplifier stage.For example, RF signal source 320 Output signal can have the power level in about 100 watts to about 400 watts or higher range.

The gate bias voltage that one or more amplifier stages are supplied to by power supply and bias circuitry 326 can be used And/or drain power voltage come control by power amplifier apply gain.More specifically, power supply and bias circuitry 326 provide bias voltage and supply voltage according to from the received control signal of system controller 312 to each RF amplifier stage.

In one embodiment, each amplifier in RF signal source 320 includes that the metal oxide of horizontal proliferation is partly led Body FET (LDMOSFET) transistor.However, it should be noted that transistor is not intended to be limited to any specific semiconductor technology, and In other embodiments, one or more transistors can be implemented as gallium nitride (GaN) transistor, another type of MOSFET Transistor, bipolar junction transistor (BJT) or the transistor using another semiconductor technology.

Defrosting chamber 360 and any load 364 (for example, food, liquid etc.) being located in defrosting chamber 360 are to by the One electrode 340 is radiated the electromagnetic energy (or RF power) in chamber 360 and accumulation load is presented.More specifically, chamber 360 and load 364 are presented impedance to system, and the impedance is referred to herein as " chamber input impedance ".Chamber input impedance is during the operation that defrosts As the temperature increase of load 364 changes.

Except in defrosting system 300, implement RF signal source 320 using self-oscillation and self-stabilization circuit, the self-oscillation and from Stabilizing circuit be configured under the frequency at least partly determined by load impedance vibrate (and thus generate output RF letter Number).Impedance (that is, chamber input impedance) associated with the combination of chamber 360 and any load 364, which is formed, limits RF signal source 320 Oscillator resonance frequency tank circuit or resonance circuit a part.In this way, during the operation except defrosting system 300 simultaneously And even when the impedance for loading 364 changes over time, output frequency (and specifically, the RF signal source 320 of the oscillator Output frequency) in the absence of user input automatically variation or adjustment so that RF signal source 320 is including and chamber 360 In addition dynamically output signal under the resonance frequency of the tank circuit of 364 associated impedances of load.By in tank circuit It is operated under the resonance frequency of variation, RF signal source 320, which can produce, to be realized RF energy maximum transfer to the RF letter in load 364 Number, or even when the impedance change for being defrosted to load 364 and loading 364 plus chamber 360.In this way, RF signal Source 320 is continuous self-tuning to optimize the power being transferred in load 364.

In one embodiment, RF signal source 320 includes such as Colpitts oscillator self-regulated harmonic oscillator, the self-tuning Oscillator depends on the combination for the inductor and capacitor being arranged in tank circuit so that the vibration of the self-regulated harmonic oscillator is arranged Swing frequency.For example, each embodiment of Colpitts oscillator is incorporated to the tank circuit with two capacitors being connected in parallel, Described in the first end of first capacitor in two capacitors be connected to ground nodes, and in described two capacitors The second end of second capacitor is connected to inductor.This arrangement forms LC resonance circuit.As described below, in RF signal source In 320 one embodiment, the self-regulated harmonic oscillator is configured so that by including the one or more electricity except defrosting system 300 The capacitance structure of pole and chamber 360 (plus load) provides a capacitor in the capacitor of tank circuit.Notwithstanding spy Fixed example arrangement (including Colpitts oscillator), however, it is understood that it is real that other types of self-regulated harmonic oscillator can be used RF signal source 320 is applied, wherein the oscillator is using the combination of capacitor and other circuit blocks in the resonance frequency of circuit Under establish frequency of oscillation.It, can be in a manner of described herein by corresponding one or more tank circuits in this circuit In capacitor in one or more capacitors to be embodied as one or more electrodes except defrosting system 300 (and negative plus chamber 360 Carry) capacitance structure.

RF signal source 320 is supplied electric power to by power supply and bias circuitry 326.Power supply and bias circuitry 326 usually export direct current (DC) voltage to RF signal source 320, wherein the D/C voltage can at 0 volt to about 65 volts or more In big range.It can be arranged or determine the D/C voltage exported by power supply and bias circuitry 326 by system controller 312 Amplitude.For example, based on can choose use from user interface 380 and/or the received input of sensor 390, system controller 312 In the output voltage appropriate of power supply and bias circuitry 326.For example, for having lighter load weight is heavier to bear 364 are carried, output voltage may be bigger.Based on various inputs, system controller 312 can use look-up table determine for power supply and The suitable output voltage of bias circuitry 326.In some embodiments, the output electricity of power supply and bias circuitry 326 Be pressed in entire defrosting or heating process can be it is constant.Fig. 9 A is to describe to indicate power supply and biased electrical during defrosting process The curve graph of the waveform of the possible output of road system 326.As shown, output voltage is constant to entire heating process.

In some other embodiments, system controller 312 can make the output voltage of power supply and bias circuitry 326 For specific 364 variation of load during entire defrosting.In some cases, output voltage can defrosting or it is heated Persistently change over time during journey.This variation can be for example by the initial or intermediate of defrosting or heating process Load is heated or is defrosted more quickly during part and then at the end of the process reduce output voltage with into And the amount to the energy of load delivering is reduced to control heating process.This can be by providing to the process that heats or defrost Low energy final stage comes heating or defrosting so as to load progress more evenly, and the low energy final stage more effectively allows thermal energy point Cloth is on food.It is to describe to indicate the possible defeated of during defrosting process power supply and bias circuitry 326 in order to illustrate, 9B The curve graph of waveform out, wherein output voltage is not constant and may continue to change with the process that heats or defrost.

In order to realize the different output dc voltages of power supply and bias circuitry 326, power supply and bias circuitry 326 It is configured to generate and export a series of variable power supply of different output voltages.In other embodiments, power supply and Bias circuitry 326 may be configured to generate the amplitude with fixation but variable duty ratio or with variable amplitude but The PWM output signal of the combination of fixed pulse width or both.It that case, except defrosting system 300 can be with It is incorporated to pulse width modulation circuit, the pulse width modulation circuit is configured to output voltage being modulated into pulse output voltage (for example, voltage in the range of 0 volt to 65 volts) can use the pulse output voltage operation RF signal source 320 To generate output RF energy and implement the function except defrosting system 300.Pulse width modulation circuit generates fixed output dc voltage. By the control transistor or switch of switching circuit, circuit will export its D/C voltage (if transistor is opened) or no-voltage (if transistor is closed).Correspondingly, by turning on and off transistor, a series of pulses of circuit output, wherein each Pulse has the D/C voltage of circuit.Then, energy is realized to the time quantum of off state in an ON state by changing transistor Amount is adjusted.Time period is referred to as the duty ratio of power supply and is represented as in special time period or is spaced the percentage of turn-on time Than.It, can be during the process by the energy delivery of variable to negative by adjusting the duty ratio in defrosting or heating process In load.Fig. 9 C is to describe the song for indicating the waveform of the possible output of power supply and bias circuitry 326 during defrosting process Line chart.As shown, output voltage is formed with a series of pulses of constant DC voltage.By adjusting the quantity of pulse With the duration of each pulse, can finely tune or control by defrosting or heating process be delivered to load in energy amount with Realize desired load condition.

In still other embodiments, power supply and bias circuitry 326 may be configured to generate with variable amplitude PWM output signal.It that case, except defrosting system 300 can be incorporated to pulse width modulation circuit, it is described Pulse width modulation circuit is configured to for output voltage being modulated into pulse variable output voltage (for example, at 0 volt to 65 volts In the range of voltage), can use pulse variable output voltage operation RF signal source 320 to generate output RF energy simultaneously And implement to remove the function of defrosting system 300.Pulse width modulation circuit generates variable output dc voltage.By control power supply and partially The output voltage of circuits system 326 and the control transistor or switch of switching circuit, the circuit D/C voltage that output is selected (if transistor is opened) or no-voltage (if transistor is closed).Correspondingly, by turning on and off transistor, A series of pulses of circuit output, wherein each pulse has specified and potential variable D/C voltage.Then, by changing power supply Both time quantums of off state are realized in an ON state with the output voltage and transistor of bias circuitry 326 Energy adjustment.Fig. 9 D is to describe the waveform for indicating the possible output of power supply and bias circuitry 326 during defrosting process Curve graph.As shown, output voltage is formed with a series of pulses of variable voltage.By adjusting output voltage And pulse quantity and each pulse duration, can finely tune or control by defrosting or heating process be delivered to load In energy amount to realize desired load condition.

As described above, implementing RF signal source 320 using self-oscillating circuit, the self-oscillating circuit is configured in response to DC The application of input voltage generates oscillation output signal.Circuit is self-tuning, because the circuit, which is configured to generate, to be had certainly The output signal of the resonance frequency of the tank circuit (or resonance circuit) of oscillating circuit.It should be noted that in some cases, because Parasitic loss in circuit may be such that output frequency slightly reduces, and the actual frequency of the output signal of self-oscillating circuit may be only It is approximately equal to the resonance frequency of tank circuit or resonance circuit.For example, the frequency of output signal may be between tank circuit (or resonance Circuit) resonance frequency about 95% and 105% between.

Fig. 4 is to describe the example self-regulated that can be incorporated to the uneven embodiment for removing defrosting system (for example, system 300 of Fig. 3) The schematic diagram of harmonious self-oscillating circuit.Self-oscillator circuit 400 includes positive input voltage node 402 and reference mode or ground connection section Point 404.Resistor 406,408 is coupled in series between positive input voltage node 402 and ground nodes 404.In this way, resistor 406, it 408 is operated as divider, so that the voltage at the node 412 being placed between resistor 406,408 is positive input electricity Press the score of the voltage at node 402.The score is determined by the relative resistance of resistor 406,408.

Self-oscillator circuit 400 includes transistor 410 (that is, gain apparatus).As depicted in fig. 4, transistor 410 is double Pole junction transistor (BJT), although can use different types of crystal in the other embodiments of self-oscillator circuit 400 Pipe.For example, transistor 410 may include silicon based metal oxide semiconductor field effect transistor (MOSFET).It should be noted that crystal Pipe 410 is not intended to be limited to any specific semiconductor technology, and in other embodiments, transistor 410 can be implemented as Gallium nitride (GaN) based transistor, another type of field effect transistor (FET) or the crystalline substance using another semiconductor technology Body pipe.

Node 412 is coupled to the control terminal (for example, gate terminal of the base terminal of BJT or FET) of transistor 410.In general, electric The relative resistance of resistance device 406,408 is chosen to the voltage applied to the control terminal of transistor 410 at node 412 (and the voltage therefore applied to the control terminal of transistor 410) biases transistor 410, so that transistor 410 be enable to make For amplifier operations.

Self-oscillator circuit 400 further includes the first electric current conduction for being coupled in positive input voltage node 402 and transistor 410 Hold the inductor 424 between (for example, drain electrode end of the collector terminal of BJT or FET).Second electric current conduction terminals (for example, BJT The source terminal of emitter terminal or FET) it may be coupled to ground nodes 404.Inductor 424 is operated as RF inductor choke (that is, inductor 424 is the high impedance component under the operating frequency of self-oscillator circuit 400), and in this way, inductor 424 Bias the first electric current conduction terminals of transistor 410.

The oscillating part of self-oscillator circuit 400 is formed by the combination of capacitor 414, inductor 416 and capacitor 418 Tank circuit.In the tank circuit, capacitor 414 have be coupled to node 415 first end (first electrode) and It is connected to the second end of ground nodes 404.Inductor 416 has the first end for being coupled to node 415 and is coupled to node 417 Second end.Capacitor 418, which has, to be coupled to the first end of node 417 and is coupled to the second end of ground nodes 404.Herein In configuration, the resonance frequency of the tank circuit formed by capacitor 414,418 and inductor 416 is determined by following equation (1):

Wherein L is equal to the inductance value of inductor 416, C₁Equal to the capacitance of capacitor 414, and C₂Equal to capacitor 418 Capacitance.

By being formed between the first electric current conduction terminals of transistor 410 and node 415 (or first end of capacitor 414) Connection 422, establish feedback control loop in self-oscillator circuit 400.The first end of capacitor 418 is coupled by capacitor 420 To node 412, the capacitor 420 is in turn coupled to the control terminal of transistor 410.Capacitor 420, which has, is coupled to node 417 The first end of (or first end of capacitor 418) and the second end for being coupled to node 412, and capacitor 420 is used as DC interpolar Coupling capacitor operation is with the electricity at the control terminal of voltage and transistor 410 at the first electric current conduction terminals by transistor 410 Pressure isolation.

During operation, in the case where applying appropriate voltage to the both ends of node 402 and 404, pass through the electricity at node 412 Pressure biases transistor 410.Voltage is accumulated at 414 both ends of capacitor, this is dissipated by inductor 416, charging capacitor 418. Capacitor 414 and 418 then will be eventually by 416 back discharge of inductor.Capacitor 414 and 418 is carried out by inductor 416 Charging and discharging generate damped oscillation in the tank circuit of self-oscillator circuit 400, to cause at 418 both ends of capacitor Alternating voltage.Then the alternating voltage is applied to the input terminal or control terminal of transistor 410 by DC block-condenser 420. Then, the alternating voltage is amplified and is phase-shifted at the output of transistor 410 in turn, and therefore, in transistor 410 Output at generate stable oscillation stationary vibration, and the stable oscillation stationary vibration is re-applied to tank circuit and is amplified again.Repeat this One process, set self-oscillator circuit 400 oscillation, the self-oscillator circuit 400 will finally according to above-mentioned equation (1) by It is vibrated under the resonance frequency that the value of capacitor 414,418 and inductor 416 determines.This oscillator signal is put by transistor 410 in turn Greatly.Then the signal of the amplification feeds back feedback capacitor 414 via feedback line 422.It will be such as explained in greater detail in conjunction with Fig. 5 , being applied to the voltage at node 402 can correspond to be supplied by power supply (for example, power supply and bias circuitry 326 of Fig. 3) To the voltage of RF signal source, and the feedback signal on route 422 can correspond to from RF signal source (for example, the RF of Fig. 3 believes Number source 320) the RF output signal applied to first electrode (for example, electrode 340 of Fig. 3).

It can be applied to that be located in defrosting intracavitary according to except defrosting system is controlled using the self-oscillator circuit design of Fig. 4 The RF energy of load.Specifically, the capacitance structure of electrode and defrosting chamber (plus load) may be used as the tank circuit of oscillator In capacitor in a capacitor.As described below, by the way that this oscillator to be incorporated in RF signal source, can effectively by Energy delivery is into defrosting load.In order to illustrate Fig. 5 is to describe to be incorporated to except defrosting system is (for example, Fig. 3's removes defrosting system 300) schematic diagram of the embodiment of a part of the RF self-oscillator circuit 500 (for example, RF signal source 320 of Fig. 3) in.

As shown, self-oscillator circuit 500 includes positive input voltage node 502 and reference mode or ground nodes 504.In this configuration, positive input voltage node 502 may be coupled to power supply (for example, the power supply and bias circuitry of Fig. 3 326) to receive from it D/C voltage.As discussed previously, D/C voltage can be variable DC voltage, or can be to have and can be changed The pulse width modulated voltage of duty ratio.Resistor 506,508 is coupled in series in positive input voltage node 502 and ground nodes Between 504.In this way, resistor 506,508 is operated as divider, so that being placed in the node 512 between resistor 506,508 The voltage at place is the score of the voltage at positive input voltage node 502.Described in being determined as the relative resistance of resistor 506,508 Score.

Self-oscillator circuit 500 includes transistor 510 (that is, gain apparatus).As depicted in figures 5, transistor 510 can be with It is bipolar junction transistor, although can use different types of crystal in the other embodiments of self-oscillator circuit 500 Pipe.For example, transistor 510 may include FET, such as silicon substrate, GaN base or other types of FET.It should be noted that transistor is not intended to It is confined to any specific semiconductor technology, and in other embodiments, can be realized by another semiconductor technology brilliant Body pipe 510.

Node 512 is coupled to the control terminal of transistor 510.In general, the relative resistance of resistor 506,508 is selected as So that at node 512 to the control terminal of transistor 510 apply voltage (and therefore to the control terminal of transistor 510 apply Voltage) bias transistor 510, to enable transistor 510 as amplifier operations.

Self-oscillator circuit 500 further includes the first electric current conduction for being coupled in positive input voltage node 502 and transistor 510 Hold the inductor 512 between (for example, drain electrode end of the collector terminal of BJT or FET).Second electric current conduction terminals (for example, BJT The source terminal of emitter terminal or FET) it may be coupled to ground nodes 504.Inductor 512 is operated as RF inductor choke (that is, inductor 512 is the high impedance component under the operating frequency of self-oscillator circuit 500), and in this way, inductor 512 Bias the first electric current conduction terminals (for example, collector terminal) of transistor 510.

The oscillating part of self-oscillator circuit 500 is by the combination of capacitor arrangement 514, inductor 516 and capacitor 518 The tank circuit of formation.In the tank circuit, capacitor arrangement 514 has first end (the first electricity for being coupled to node 515 Pole) and it is connected to the second ends of ground nodes 504.Inductor 516 has the first end for being coupled to node 515 and is coupled to The second end of node 517.Capacitor 518 has the first end for being coupled to node 517 and is coupled to the second of ground nodes 504 End.

According to one embodiment, capacitor arrangement 514 is in fact by the structure of electrode and except the defrosting chamber of defrosting system is formed. Specifically, described except the first electrode of defrosting system 540 (for example, electrode 340 of Fig. 3) forms the first plate of capacitor arrangement 514 First plate is coupled to the first end of inductor 516.Similarly, except 566 (example of the ground connection second electrode of defrosting system or contained structure Such as, the contained structure 366 of Fig. 3) or its at least part form the second plate of capacitor arrangement 514, second plate is coupled to Ground nodes 504.Load 564, which is located in, to defrost intracavitary and the intracavitary air for including that defrosts is combined to form capacitor arrangement 514 Dielectric.In this configuration, the storage tank electricity formed by capacitor 514,518 and inductor 516 can be determined by equation (1) The resonance frequency on road, wherein L is equal to the inductance value of inductor 516, C₁Equal to the capacitance of capacitor arrangement 514, and C₂It is equal to The capacitance of capacitor 518.

By the input terminal (for example, collector terminal) of transistor 510 and the first end of capacitor arrangement 514 (for example, electrode 540) connection 522 between, establishes feedback control loop in self-oscillator circuit 500.For example, connection 522 can correspond in Fig. 3 Connection 328.The first end of capacitor 518 is coupled to node 512 by capacitor 520, and the node 512 is in turn coupled to crystalline substance The control terminal of body pipe 510.Capacitor 520 has the first end (or first end of capacitor 518) for being coupled to node 517 and coupling To the second end of node 512, and capacitor 520 is operated as DC blocking capacitor with electric by the first of transistor 510 Voltage at stream conduction terminals is isolated with the voltage at the control terminal of transistor 510.

During operation, it is applied to node 502,504 both ends (for example, power supply and bias circuitry 326 for passing through Fig. 3) In the case where adding appropriate voltage, bias transistor 510 by the voltage at node 512.Voltage is removed capacitor arrangement 514 White chamber and 518 both ends of the capacitor accumulation discharged by inductor 516.Capacitor arrangement 514 and capacitor 518 pass through inductor 516 charging and discharging carried out generate damped oscillation in the tank circuit of self-oscillator circuit 500, thus in capacitor 518 Both ends cause alternating voltage.In turn, the alternating voltage is applied to the input of transistor 510 by DC block-condenser 520, and And therefore, stable oscillation stationary vibration is generated at the output of transistor 520, and the stable oscillation stationary vibration is re-applied to tank circuit simultaneously Again amplify.Repeat the step for, set self-oscillator circuit 500 oscillation, the self-oscillator circuit 500 will finally by It is vibrated under the resonance frequency that the value of capacitor 514,518 and inductor 516 determines.This oscillator signal is put by transistor 510 in turn Greatly.Then the signal of the amplification is fed back in the defrosting chamber of capacitor arrangement 514 via feedback line 522.

In this way, the defrosting of capacitor arrangement 514 is fed back to by the oscillator signal that self-oscillator circuit 500 generates In chamber.More specifically, oscillator signal is supplied to electrode 540, oscillator signal is converted into being radiated contained structure by the electrode Electromagnetic signal in 566.It is inhaled by the load 564 that the electromagnetic signal that oscillator signal generates at least partly is defrosted in chamber It receives, this will cause heating or defrosting to load 564.

In the sample application of self-oscillator circuit 500, the voltage being applied at end 502 can be in the model of 10V to 100V In enclosing, inductor 512 can have inductance in the range of 1 microhenry (uH) is to 20uH, and resistor 506 can have 10, Resistance in the range of 000 ohm to 15,000 ohm, resistor 508 can have in the range of 200 ohm to 800 ohm Resistance, capacitor 514 can have capacitor in the range of 50 pico farads (pF) are to 200pF, and inductor 516 can have Inductance in the range of 500nH to 2,000nH, capacitor 518 can have capacitor in the range of 10pF to 50pF, capacitor Device 520 can have capacitor in the range of 1nF to 10nF.In such configuration, the operating frequency of self-oscillator circuit 500 It can be in the range of 10MHz to 50MHz.

As load 564 heats up and defrosts, 564 impedance change is loaded, this changes by electrode 540 and combines load The capacitance for the capacitor arrangement 514 that 564 defrosting chamber is formed.In response to the capacitance of the variation of capacitor arrangement 514, by certainly The resonance frequency for the signal that pierce circuit 500 generates will change according to above-mentioned equation (1).During operation, self-oscillator electricity Road 500 will adjust its operating frequency, so that output signal (that is, the signal at 514 both ends of capacitor arrangement), which has, is equal to storage The frequency of the resonance frequency of slot circuit, the tank circuit include capacitor 514,518 and inductor 516.The resonance frequency Maximum voltage is generated at the defrosting chamber both ends of capacitor arrangement 514, the maximum voltage and then generation, which are transferred to, to be loaded in 564 Ceiling capacity, or even when the impedance of the chamber that defrosts (plus load) changes over time.

In this example, describe self-vibration by being configured to provide the particular electrical circuit of self-oscillation function described herein Swing device circuit 500.However, it should be understood that can use the other of the functionally similar function for the circuit described in offer and Fig. 5 Circuit configuration.Specifically, the circuit described in Fig. 5 can be modified according to other self-oscillator circuit designs, wherein self-oscillator Circuit includes tank circuit, wherein except the impedance of the chamber (plus load) of defrosting system can be incorporated in tank circuit.

Fig. 3 and 5 and relevant discussion describe " imbalance " defrosting equipment, wherein to electrode (for example, Fig. 3 Electrode 340) apply RF signal, and another " electrode " is (for example, one of second electrode or contained structure 366 in Fig. 3 Point) ground connection.As described above, the alternate embodiment of defrosting equipment includes " balance " defrosting equipment.In such equipment, to this two A electrode provides balanced RF signal.

For example, Fig. 6 be balance according to example embodiment except defrosting system 600 (for example, Fig. 1 except defrosting system 100, Fig. 2 Except defrosting system 210,220) simplified block diagram.In one embodiment, except defrosting system 600 includes RF subsystem 610, defrosting chamber 660, user interface 680, system controller 612, RF signal source 620, power supply and bias circuitry 626 and two electrodes 640, 650.In addition, in other embodiments, except defrosting system 900 may include one or more temperature sensors, one or more IR Sensor and/or one or more weight sensors 690, although sensor element some or all of in these sensor elements In being not included in.It should be understood that for illustrative purposes and for ease of description, Fig. 6 is the simplification table except defrosting system 600 Show, and practical embodiment may include other devices and component to provide additional function and feature, and/or remove defrosting system 600 can be a part of bigger electrical system.

User interface 680 can correspond to control panel (for example, the control panel 214 of the control panel 120 of Fig. 1, Fig. 2, 224), for example, the control panel allows users to be provided to system about defrosting operation (for example, the characteristic of load to be defrosted Etc.), the input of the parameter of starting and cancel button, mechanical control (for example, door/drawer unlatching) etc..In addition, user interface The user that may be configured to provide the state of instruction defrosting operation can perceive output (for example, count down timer, instruction defrosting behaviour The audible sound of the completion of the progress of work or the visable indicia of completion and/or instruction defrosting operation) and other information.

In one embodiment, RF subsystem 610 include system controller 612, RF signal source 620 and power supply and partially Circuits system 626.System controller 612 may include one or more general or specialized processors (for example, microprocessor, Microcontroller, ASIC etc.), volatibility and or nonvolatile memory is (for example, RAM, ROM, flash memory, various registers etc. Deng), one or more communication bus and other components.According to one embodiment, system controller 612 operationally and is communicated It is coupled to user interface 680, RF signal source 620, power supply and bias circuitry 626 and sensor 690 (if including in ground Words).System controller 612 is configured to receive instruction via user interface 680 and the received use of one or more sensors 690 The signal of family input.In response to the signal received, system controller 612 is believed to power supply and bias circuitry 626 and/or RF Number source 620 provides control signal.

The chamber 660 that defrosts includes capacitor defrosting arrangement, and capacitor defrosting arrangement has through separated first flat of air chamber Plate electrodes 640 and the second parallel-plate electrode 650 can place load 664 to be defrosted in the air chamber.In contained structure In 666, first electrode 640 and second electrode 650 (for example, electrode 140,150 of Fig. 1) are closed with the physics being fixed relative to each other System is located in the opposite side of internal defrosting chamber 660.

First electrode 640 and second electrode 650 are separated at 660 both ends of chamber with distance 652.In various embodiments, distance 652 in the range of about 0.10 meter to about 1.0 meters, although distance can also be smaller or larger.According to one embodiment, electrode 640, the distance between 650 652 be less than RF subsystem 610 generate RF signal a wavelength.In other words, chamber 660 can be Sub-resonant cavity.In some embodiments, distance 652 is less than about half of a wavelength of RF signal.In other embodiments, away from From 652 less than the about a quarter of a wavelength of RF signal.In still other embodiments, distance 652 is less than the one of RF signal About 1/8th of a wavelength.In still other embodiments, distance 652 is less than about 1/the 50 of a wavelength of RF signal. In still other embodiments, distance 652 is less than about 1/the 100 of a wavelength of RF signal.

Operating frequency and distance 652 between electrode 640,650 are selected to the case where limiting sub- resonance inner cavity 660 Under, first electrode 640 and second electrode 650 are capacitively coupled.More specifically, first electrode 640 can be analogized for capacitor First plate of device, the second plate that second electrode 650 can be analogized for capacitor, and load in 664, barrier 662 and chamber 660 Air can analogize for capacitor dielectric.Therefore, first electrode 640 can alternatively be referred to as " sun herein Pole ", and second electrode 650 alternatively can be referred to as " cathode " herein.

The both-end Differential Output of the output of RF subsystem 610 and more specifically RF signal source 620 is via conductive path 630,628 it is electrically coupled to electrode 640,650.Substantially, first electrode 640 associated with RF signal and second electrode Load 664 in the alternating voltage heating chamber 660 at 650 both ends.According to various embodiments, RF subsystem 610 is configured to generate RF signal with electrode 640,650 both ends generate in one embodiment at about 90 volts to about 3000 volts in the range of or About 10 are arrived in another embodiment at about 3000 volts, the voltage in the range of 000 volt, although system also may be configured to Lower or higher voltage is generated at electrode 640,650 both ends.

In response to the control signal provided by system controller 612 by connection 614, RF signal source 620 is configured to produce Raw both-end balanced oscillator electric signal.In various embodiments, can control RF signal source 620 with generate different capacity level and/ Or the oscillator signal of different frequency.For example, RF signal source 620 can occur in about 10.0MHz to about 100MHz and/or about The signal vibrated in the range of 100MHz to about 3.0GHz.

In the embodiment in fig 6, RF signal source 620 may include that the balance of amplification is generated in transmission path 628,630 The single amplifier stage or multiple amplifier stages of output signal, such as driver amplifier grade and final amplifier stage.For example, RF believes The output signal in number source 620 can have the power level in about 100 watts to about 400 watts or higher range.

Can be used by power supply and bias circuitry 626 be supplied to each amplifier stage gate bias voltage and/or Drain power voltage controls the gain that one or more power amplifiers apply.More specifically, power supply and biasing circuit system System 626 provides bias voltage and supply voltage according to from the received control signal of system controller 312 to each RF amplifier stage.

In one embodiment, each amplifier in RF signal source 620 includes LDMOSFET transistor.However, RF believes Number source 620 may include the transistor for being not limited to the different designs of any particular semiconductor technology.This transistor can wrap Include such as FET, silicon substrate or GaN base transistor, other types of MOSFET, BJT or the crystal using another semiconductor technology Pipe.

Defrosting chamber 660 and any load 664 (for example, food, liquid etc.) being located in defrosting chamber 660 are to passing through electricity Pole 640,650 is radiated the electromagnetic energy (or RF power) in chamber 660 and accumulation load is presented.More specifically, chamber 660 and load 664 are presented impedance to system, and the impedance is referred to herein as chamber input impedance.Chamber input impedance defrost operation during with Load 664 temperature increase change.

In except defrosting system 600, implement RF signal source 620 using self-oscillating circuit, the self-oscillating circuit is configured to Oscillation (and thus generating output RF signal) under the frequency at least partly determined by the impedance of load 664.With chamber 660 and The associated impedance of the combination of any load 664 (that is, chamber input impedance) forms the resonance for limiting the oscillator of RF signal source 620 The tank circuit of frequency or a part of resonance circuit.In this way, during the operation except defrosting system 600 and even working as load When 664 impedance changes over time, the output frequency (and specifically, the output frequency of RF signal source 620) of the oscillator Automatic variation in the absence of user input, so that RF signal source 620 is including associated plus load 664 with chamber 660 Impedance tank circuit resonance frequency under dynamically output signal.At the resonant frequency fx operation ensure that maximum transfer to bear RF energy in load, or even when the impedance change for being defrosted to load 664 and loading 664 plus chamber 660.With this side Formula, 620 self-tuning of RF signal source is to optimize the power being transferred in load 664.

In one embodiment, RF signal source 660 includes such as Colpitts oscillator self-regulated harmonic oscillator, the self-tuning Oscillator depends on the combination for the inductor and capacitor being arranged in tank circuit so that the frequency of oscillation of the oscillator is arranged. As described below, in one embodiment of RF signal source 660, the self-regulated harmonic oscillator is configured so that by including defrosting system The capacitance structure of the electrode 640,650 and chamber 660 (plus load) of system 600 provides a capacitor in the capacitor of tank circuit Device.Notwithstanding specific example arrangement (that is, including Colpitts oscillator), however, it is understood that other types can be used Self-regulated harmonic oscillator implement RF signal source 620, wherein the oscillator using the combination of capacitor and other circuit blocks with Frequency of oscillation is established under the resonance frequency of circuit.It, can be in a manner of described herein by corresponding one in this circuit One or more capacitors in capacitor in a or multiple tank circuits are embodied as the electrode 640,650 except defrosting system 600 In addition the capacitance structure of chamber 660 (and load).

RF signal source 620 is supplied electrical power to by power supply and bias circuitry 626.Power supply and bias circuitry 626 usually to 620 output dc voltage of RF signal source, wherein the D/C voltage can be in 0 volt to about 65 volts or bigger of model In enclosing.It can be arranged or determine the width of the D/C voltage exported by power supply and bias circuitry 626 by system controller 612 Value.For example, system controller 612 can choose for electricity based on from user interface 680 and/or the received input of sensor 690 The output voltage appropriate in source and bias circuitry 626.For example, for the load heavier with lighter load weight 664, output voltage may be bigger.Based on various inputs, it is determining for power supply and inclined that system controller 612 can use look-up table The suitable output voltage of circuits system 626.During defrosting process, power supply and bias circuitry 626 can be configured Constant DC voltage is exported at by defrosting process (for example, with reference to Fig. 9 A).In some embodiments, system controller 612 can be with Make the output voltage of power supply and bias circuitry 626 during entire defrosting for specific 664 variation of load.Fig. 9 B is retouched The example of this output voltage is drawn, and as described above, the example of the output voltage may be implemented to defrosting The control of journey more finely tuned.

In order to realize the different output dc voltages of power supply and bias circuitry 626, power supply and bias circuitry 626 It is configured to generate and export a series of variable power supply of different output voltages in entire defrosting or heating process.In In other embodiments, power supply and bias circuitry 626 may be configured to generate the amplitude with fixation but variable duty Than or with variable amplitude but the combination of the pulse width of fixation or both PWM output signal.In that feelings Under condition, except defrosting system 600 can be incorporated to pulse width modulation circuit, the pulse width modulation circuit is configured to that electricity will be exported Pressure is modulated into pulse output voltage (for example, voltage in the range of 0 volt to 65 volts), can use the pulse output Voltage operates RF signal source 620 to generate output RF energy and implement the function except defrosting system 600.Fig. 9 C depicts example arteries and veins Rush width modulated output voltage.

In still other embodiments, power supply and bias circuitry 626 may be configured to generate with variable amplitude PWM output signal.It that case, except defrosting system 600 can be incorporated to pulse width modulation circuit, it is described Pulse width modulation circuit is configured to for output voltage being modulated into pulse variable output voltage (for example, at 0 volt to 65 volts In the range of voltage), can use pulse variable output voltage operation RF signal source 620 to generate output RF energy simultaneously And implement to remove the function of defrosting system 600.Fig. 9 D is to describe a series of example output electricity for being formed as pulses with variable voltage The curve graph of pressure.By adjusting the duration of the quantity and each pulse of output voltage and pulse, it can finely tune or control The amount of the energy in load is delivered to by defrosting or heating process to realize desired load condition.

As described above, implementing RF signal source 620 using self-oscillating circuit, the self-oscillating circuit is configured in response to DC The application of input voltage generates oscillation output signal.Circuit is self-tuning, because the circuit, which is configured to generate, to be had certainly The output signal of the resonance frequency of the tank circuit (or resonance circuit) of oscillating circuit.It should be noted that in some cases, because Parasitic loss in circuit may be such that output frequency slightly reduces, and the actual frequency of the output signal of self-oscillating circuit may be waited about In the resonance frequency of tank circuit or resonance circuit.For example, the frequency of output signal may between tank circuit (or resonance electricity Road) resonance frequency about 95% and 105% between.

In order to illustrate Fig. 7 is to describe that balance can be incorporated to except the embodiment of defrosting system (for example, Fig. 6's removes defrosting system 600) Self-tuning and self-oscillating circuit 700 a part embodiment schematic diagram.As shown, self-oscillator circuit 700 Including positive input voltage node 702 and reference mode or ground nodes 704.In this configuration, positive input voltage node 702 can be with It is coupled to power supply (for example, power supply and bias circuitry 626 of Fig. 6) to receive from it D/C voltage.Resistor 706,708 is connected It is coupled between positive input voltage node 702 and ground nodes 704.In this way, resistor 706,708 is operated as divider, make The score that the voltage at the node 712 between resistor 706,708 is the voltage at positive input voltage node 702 must be placed in. The score is determined by the relative resistance of resistor 706,708.

Self-oscillator circuit 700 includes transistor 710 (that is, gain apparatus).As depicted in figure 7, transistor 710 is BJT, although can use different types of transistor in the other embodiments of self-oscillator circuit 700.For example, transistor 710 may include silicon substrate MOSFET.It should be noted that transistor is not intended to be limited to any specific semiconductor technology, and at it In its embodiment, transistor 710 can be implemented as GaN transistor, another type of field effect transistor or utilize another kind The transistor of semiconductor technology.

Node 712 is coupled to the control terminal (for example, base terminal or gate terminal) of transistor 710 by capacitor 726.Capacitor Device 726 is placed between the first end of capacitor 718 and node 712, and is operated as DC blocking capacitor to incite somebody to action The voltage of the input end of transistor 710 is isolated with the voltage at the control terminal of transistor 710.In general, resistor 706,708 Relative resistance is chosen to the voltage applied to the control terminal of transistor 710 at node 712 (and therefore to crystal The voltage that the control terminal of pipe 710 applies) transistor 710 is biased, to enable transistor 710 as amplifier operations.

Self-oscillator circuit 700 further includes the first electric current conduction for being coupled in positive input voltage node 702 and transistor 710 Hold the inductor 713 between (for example, drain electrode end of the collector terminal of BJT or FET).Second electric current conduction terminals (for example, BJT The source terminal of emitter terminal or FET) it may be coupled to ground nodes 704.Inductor 713 is operated as RF inductor choke (that is, inductor 713 is the high impedance component under the operating frequency of self-oscillator circuit 700), and in this way, inductor 713 Bias the first electric current conduction terminals of transistor 710.

The oscillating part of self-oscillator circuit 700 is by the combination of capacitor arrangement 714, inductor 716 and capacitor 718 The tank circuit of formation.Transformer 720 (or balanced-to-unblanced transformer) is also incorporated in tank circuit, wherein the transformer 720 include the first winding 720a and the second winding 720b.In tank circuit, capacitor arrangement 714 have be coupled to first around It organizes the first end (first electrode) of the first end of 720a and is coupled to the second end of the second end of the second winding 720b.Inductor 716 have the first end for the first end for being coupled to the second winding 720b and are coupled to the second end of node 717.Capacitor 718 With the first end for being coupled to node 717 and it is coupled to the second ends of ground nodes 704.

In this embodiment, capacitor arrangement 714 by electrode 740,750 (for example, electrode 640,650 of Fig. 6) and removes White chamber (for example, chamber 660 of Fig. 6) is formed plus the structure of intracavitary any load 764.Specifically, defrost the first electrode of chamber First plate of 740 (for example, electrodes 640 of Fig. 6) formation capacitor arrangement 714.Similarly, defrost the 750 (example of second electrode of chamber Such as, the electrode 650 of Fig. 6) formed capacitor arrangement 714 the second plate.Load 764, which is located in, to defrost intracavitary and combines defrosting chamber The air for inside including forms the dielectric of capacitor arrangement 714.As discussed above, capacitor arrangement 714 is coupled in transformer 720 The first both ends winding 720a.More specifically, electrode 740 is coupled to the first end of winding 720a, and electrode 750 is coupled to The second end of winding 720a.

During self-oscillator circuit 700 operates, signal is transmitted by the second winding 702b of transformer 720.Transformer 720 convert the signal into the balanced signal at the first winding 720a of transformer 720.More specifically, balanced signal is Double-end signal, for the double-end signal, at any given time, signal and winding 720a at the first end of winding 720a Second end at the phase difference of signal be about 180 degree.This balanced signal is eventually applied to the electricity in the chamber of heating system Pole 740,750 both ends, to transfer energy into load 764.On the contrary, since voltage is tired at 714 both ends of capacitor arrangement It accumulates and is flowed into capacitor 718 eventually by inductor 716, transformer 720 converts the balanced voltage of capacitor arrangement 714 At unbalance voltage.

In one embodiment, transformer 720 has the ratio of winding of about 1:1.In this configuration, when any given Between, winding 720a, the voltage at the both ends winding 720b of transformer 720 are identical.In other embodiments, however, have it is different around The transformer of group ratio can be used in the position of transformer 720.By adjusting the ratio of winding of transformer 720, the resistance of transformer 720 Anti- to be adjusted, this can contribute to maximize the energy for being transferred to load 764 from circuit in some cases.Therefore, have There are the different transformers 720 of different ratios of winding can be according to the capacitance of circuit 700 electrode coupled and heating chamber (loading) It is incorporated in self-oscillator circuit 700.For example, using the configuration of multiple heating chambers (for example, the different defrostings of different geometric configurations are taken out Drawer) except defrosting system may include be configured to using with different windings configuration different transformers 720 self-oscillating circuit, Wherein each self-oscillating circuit is configured for specific heating chamber and is configured.

In the configuration for the self-oscillating circuit 700 being shown in FIG. 7, it can be determined by above-mentioned equation (1) by capacitor 714,718 and inductor 716 formed tank circuit resonance frequency, wherein L be equal to inductor 716 inductance value, C₁It is equal to The capacitance of capacitor arrangement 714, and C₂Equal to the capacitance of capacitor 718.

Self-oscillator circuit 700 between the first electric current conduction terminals of transistor 710 and the winding 720b of transformer 720 Inside establish feedback control loop.Specifically, the first electric current conduction terminals of transistor 710 are coupled to the first end of capacitor 728, and The second end of capacitor 728 is coupled to the first end of the winding 720b of transformer 720.

During operation, to the both ends of node 702 and 704 power supply and bias circuitry 626 of Fig. 6 (for example, pass through) In the case where applying appropriate voltage, bias transistor 710 by the voltage at node 712.Initially, voltage is in capacitor arrangement 714 defrosting chamber both ends accumulation, this is transmitted by transformer 720 and is dissipated by inductor 716, charging capacitor 718.So Afterwards, capacitor 718 is by eventually by the second winding 720b back discharge of inductor 716 and transformer 720, and balanced signal will be It is generated at first winding 720a of transformer, and this balanced signal will be converted into being radiated capacitor by electrode 740,750 Electromagnetic signal in the defrosting chamber of structure 714.The step for repeating, the oscillation in setting signal source 700, the signal source 700 will Finally vibrated under the resonance frequency determined by the value of capacitor 714,718 and inductor 716.This oscillator signal is in turn by crystal Pipe 710 amplifies.Then the signal of the amplification is fed back in the defrosting chamber of capacitor arrangement 714 via feedback line 722.

In this way, feedback is converted into capacitor arrangement 714 by the oscillator signal that self-oscillator circuit 700 generates Defrosting chamber in and specifically by electrode 740,750 convert electromagnetic energy.It is raw by the oscillator signal that can be RF signal At electromagnetic energy be at least partly defrosted the load 764 in chamber absorb, this will cause to load 764 heating or defrosting.

With load 764 heat up and defrost, load 764 impedance change, this change by defrosting chamber combination electrode 740, The capacitance of 750 capacitor arrangements 714 formed with load 764.In response to the capacitance of the variation of capacitor arrangement 714, by The resonance frequency for the signal that self-oscillator circuit 700 generates will change due to the capacitance changed according to above-mentioned equation (1).In During operation, self-oscillator circuit 700 will adjust its operating frequency, so that output signal is (that is, 714 liang of capacitor arrangement The signal at end) frequency with the resonance frequency equal to tank circuit, the tank circuit includes capacitor 714,718 and inductance Device 716.The resonance frequency generates maximum voltage, the defrosting chamber and then generation at the defrosting chamber both ends of capacitor arrangement 714 The ceiling capacity being transferred in load 764, or even when the impedance for the chamber that defrosts changes over time.

Particular electrical circuit by being configured to provide self-oscillation function described herein is depicted from pierce circuit 700. However, it should be understood that can use other circuit configurations of the functionally similar function for the circuit described in offer and Fig. 7.Specifically Ground can modify the circuit described in Fig. 7 according to other self-oscillator circuit designs, and wherein self-oscillator circuit includes storage tank electricity Road, wherein except the impedance of the chamber (plus load) of defrosting system can be incorporated in tank circuit.

In various embodiments, related to RF subsystem (for example, RF subsystem 610 of the RF subsystem 310 of Fig. 3, Fig. 6) The circuit system of connection can also be implemented in the form of one or more modules.This module can be incorporated to printed circuit board (PCB) the ground connection substrate of structural support is provided, each electrical components of the module may be mounted on the substrate.According to one Embodiment, PCB accommodate circuit system associated with RF subsystem (for example, the subsystem 310 of Fig. 3 or subsystem 610 of Fig. 6) System.

The embodiment that the electrically and physically aspect of defrosting system is removed due to having been described, will describe now in conjunction with Fig. 8 For operating each embodiment of such method except defrosting system.More specifically, Fig. 8 is operation except defrosting system is (for example, system 100,210,220, the 300,600) flow chart of method, wherein the defrosting system includes self-oscillation according to example embodiment Signal source.

In frame 802, the method can be in system controller (for example, the system of the system controller 312 of Fig. 3, Fig. 6 Controller 612) receive defrosting operation should start instruction when start.It can for example will have been loaded (for example, Fig. 3 in user Load 364, Fig. 6 load 664) be placed into the defrosting chamber (for example, chamber 660 of the chamber 360 of Fig. 3, Fig. 6) of system, seal The chamber (for example, by closing door or drawer) simultaneously presses (for example, the user interface 380 of Fig. 3, user interface of Fig. 6 680) Such instruction is received after start button.In one embodiment, the sealing of chamber can engage one or more safety mutual lock machines Structure.

According to various embodiments, system controller optionally can receive instruction loadtype (for example, meat, liquid or Other materials), the additional input of initial load temperature and/or load weight.For example, the interaction with user interface can be passed through (for example, being selected from the list of the loadtype of identification by user) receives the information about loadtype from user.It can Replacement, system may be configured to scan load exterior visual bar code or from load is upper or insertion load in RFID device receives electronic signal.Can for example from one or more temperature sensors of system and/or IR sensor (for example, The sensor 690 of the sensor 390 of Fig. 3, Fig. 6) receive information about initial load temperature.Can by with user interface Interaction from user or from the weight sensor (for example, sensor 690 of the sensor 390 of Fig. 3, Fig. 6) of system receive about The information of load weight.As indicated above, to the input of instruction loadtype, initial load temperature and/or load weight Reception be it is optional, and system can not alternatively receive these input in some or all of.

In frame 804, based on data received during step 802, system controller determination will be by suitable power supply (for example, power supply and bias circuitry 626 of the power supply of Fig. 3 and bias circuitry 326, Fig. 6) is supplied to the signal of system The voltage or voltage signal feature (for example, in the case where pulse width modulates (PWM) voltage signal) of generator.In each reality It applies in example, can use look-up table and determine suitable voltage or voltage signal feature, wherein the spy of load (for example, load 764) Determining attribute (weight and/or temperature of such as food type, food) can be related to specific voltage or voltage properties value.In some realities It applies in example, can use look-up table and select the initial voltage supplied to the signal generator of system or voltage signal feature.However, With the continuation of heating process, the voltage applied to the signal generator of system can be adjusted to control and be occurred by the signal Device generates how many RF energy.Specifically, by adjusting the D/C voltage amplitude or PWM frequency of the signal applied to signal generator Or both, the voltage applied to the signal generator of system can be made (and to be thus supplied to the output for the load heated RF signal energy) become variable.Changing those parameters during heating process may help to removing for fine load White temperature is kept uniformly, and is also terminated by applying more RF energies when heating process starts and reducing in heating process When the amount of energy that delivers reduce defrosting time to avoid the temperature hot spot generated in load.

In the case where desired voltage or voltage signal feature have been determined in step 804, in step 806, system control Device processed makes that power supply supplies desired voltage or voltage signal is used as self-oscillator circuit (for example, the circuit 500 of Fig. 5, Fig. 7 Circuit 700) input.In the case where applying voltage to self-oscillator circuit, circuit starts in self-vibration as described above It swings and RF signal is vibrated and generated under the resonance frequency of the tank circuit in device circuit.By electrode (for example, electrode 540, Fig. 7 of Fig. 5 Electrode 740,750) the RF signal is converted into being delivered in the defrosting chamber of system and being finally delivered to placing wherein Load in electromagnetic energy.As load heats up, load impedance changes, and as described herein, in response, self-oscillator Circuit will adjust the frequency of its output signal (that is, the signal for being supplied to electrode).This may insure that the maximum amount of RF energy is being removed It is delivered in load during frost operation.

In step 808, whether system controller assessment exit criteria has occurred and that.In fact, determining that exit criteria is No have occurred and that can be interruption driving process, and any point during defrosting process can occur for the interruption driving process Place.However, process is shown as occurring after block 806 in order to be included into the flow chart of Fig. 8.

Under any circumstance, several conditions can guarantee to stop defrosting operation.For example, being when safety interlock is broken System can determine that exit criteria has occurred and that.Alternatively, expire in timer set by user (for example, the use for passing through Fig. 3 Family interface 380, Fig. 6 user interface 680) or by system controller be based on system controller to defrosting operation should execute how long Estimation establishment timer expire when, system can determine that exit criteria has occurred and that.In still another alternate embodiment In, system can detect the completion of defrosting operation in other ways.

If exit criteria not yet occurs, the operation that defrosts can iteratively execute the continuation of frame 804,806 and 808. When exit criteria has occurred and that, then in frame 810, in the RF signal supply that system controller carries out self-oscillator circuit It is disconnected.For example, system controller can disable RF signal source (for example, RF signal source 320 of Fig. 3, the RF signal source 620 of Fig. 6) and/ Or power supply and bias circuitry (for example, circuit system 326 of Fig. 3, the circuit system 626 of Fig. 6) can be made to interrupt power supply electricity The offer of pressure.In addition, system controller can be to user interface (for example, the user interface 380 of Fig. 3, the user interface of Fig. 6 680) send signal, the signal make user interface generate exit criteria user can perceptible markings (for example, by display fill It sets display " door opening " or " completion " or audible sound is provided).Then, method can terminate.

It should be understood that the sequence of operation associated with the discribed frame of Fig. 8 corresponds to example embodiment and should not be solved It is interpreted as order of operation being only limitted to shown sequence.On the contrary, some operations can be performed in different and/or some operations can be with It is performed in parallel.

The each connecting line shown in the drawings for including herein is intended to indicate that the example functional relationships between each element And/or physical coupling.It should be noted that in the embodiment of this theme, there may be many alternative or other functional relationship or objects Reason connection.In addition, certain terms can be not intended to restrictive, and art with use only for reference and therefore herein Language " first ", " second " and refer to that other this numerical value terms of structure do not imply that sequence or sequence, unless context understands It points out on ground.

As it is used herein, " node " means that Setting signal, logic level, voltage, data pattern, electric current or quantity are deposited Any internal or external reference point, tie point, node, signal wire, conducting element for being etc..In addition, two or more are saved Point can be realized by physical component (and even if being received or exporting at common node, can be to two or more A signal is multiplexed, modulated or is distinguished in other ways).

The description of front is related to " connecting " or " coupling " element together or node or feature.As it is used herein, Unless otherwise expressly provided, it otherwise " connects " and means an element directly and be not necessarily and be mechanically coupled to another yuan Part (or being directly connected to another element).Equally, unless explicitly stated otherwise, " coupling " mean an element directly or It is grounded and is not necessarily and be mechanically coupled to another element (or being directly or indirectly connected to another element).Therefore, though Right schematic diagram shown in the drawings depicts an exemplary arrangement of element, but can deposit in the embodiment of described theme In other intermediary element, device, feature or component.

A kind of embodiment of hot increase system includes: capacitor arrangement, and the capacitor arrangement includes capacitor dielectric And first capacitor device plate and the second condenser armature, the capacitor dielectric include the chamber for accommodating load.Described first Condenser armature is disposed upon the electrode in the chamber.The system comprises self-oscillator circuit, the self-oscillator circuit includes Resonance circuit, the resonance circuit are configured to generate in the case where corresponding to the output frequency of resonance frequency of the resonance circuit and penetrate Frequently (RF) signal.The resonance circuit includes the capacitor arrangement.

In one example, the resonance circuit also comprises inductor.The first end of the inductor is directly connected to The first capacitor device plate.In one example, the hot increase system also comprises the contained structure comprising the chamber.It is described At least part of contained structure forms second condenser armature of the capacitor arrangement.In one example, the electricity The first capacitor device plate of structure of container is coupled to the first end of the inductor, and described the of the capacitor arrangement Two condenser armatures are coupled to ground nodes.In one example, the resonance circuit includes the second capacitor.Second capacitor The first end of device is coupled to the inductor, and the second end of second capacitor is coupled to the ground nodes.One In a example, the hot increase system also comprises the transformer with the first winding and the second winding.The capacitor arrangement The first capacitor device plate be electrically coupled to the first end of first winding.Second capacitor of the capacitor arrangement Plate is electrically coupled to the second end of first winding.The inductor is electrically coupled to second winding of the transformer.In In one example, the ratio of winding of the transformer is one to one.In one example, the hot increase system also comprises connection To the pulse width modulation power of the self-oscillator circuit.The duty ratio of the pulse width modulation power at least partly by The temperature of the type of the load, the weight of the load or the load determines.

In another embodiment, a kind of hot increase system includes chamber, the first electrode being placed in the chamber, is placed in The self-oscillator circuit of second electrode and generation radiofrequency signal in the chamber, the radiofrequency signal are converted by described First electrode and the second electrode are radiated the electromagnetic energy in the chamber.The self-oscillating circuit includes the first electrode With the second electrode.In one example, the first electrode is the first plate in capacitor arrangement, and the second electrode is The second plate in the capacitor arrangement, the load of the chamber and receiving in the cavity are the capacitors of the capacitor arrangement Dielectric, and the resonance frequency of the self-oscillator circuit is at least partly determined by the capacitance of the capacitor arrangement. In one example, the self-oscillator circuit includes inductor, and the system also comprises transformer.The capacitor First plate and second plate of structure are electrically coupled to the first winding of the transformer, and the inductor is electrically coupled To the second winding of the transformer.In one example, the ratio of winding of the transformer is one to one.In one example, The system also comprises the pulse width modulation power for being connected to the self-oscillator circuit.The pulse width modulation power Duty ratio at least partly determined by the temperature of the type of the load, the weight of the load or the load.At one In example, the frequency range of the radiofrequency signal is 10 hertz to 100 megahertzs.

In another embodiment, a kind of method operating hot increase system includes: to be supplied from power supply to self-oscillator circuit Electric signal is answered, the self-oscillator circuit includes resonance circuit, and the resonance circuit is corresponding to the self-oscillator circuit Radio frequency (RF) signal is generated under the output frequency of the resonance frequency of the resonance circuit.The resonance circuit includes capacitor knot Structure.The capacitor arrangement includes capacitor dielectric and first capacitor device plate and the second condenser armature, the capacitor electricity Medium includes the chamber for accommodating load.The first capacitor device plate is disposed upon the electrode in the chamber.The method includes It detects exit criteria and the power supply is made to stop supplying the electric signal to the self-oscillator circuit.

In one example, the resonance circuit also comprises inductor, and the first end of the inductor directly connects It is connected to the first capacitor device plate.In one example, the power supply include be connected to the self-oscillator circuit pulse it is wide Modulation power source is spent, and supplying the electric signal includes being arranged to the duty ratio of the pulse width modulation power at least partly The value that ground is determined by the temperature of the type of the load, the weight of the load or the load.In one example, the chamber In contained structure, and at least part of the contained structure forms second capacitor of the capacitor arrangement Device plate.In one example, the resonance circuit also comprises inductor, and the first capacitor of the capacitor arrangement Device plate is electrically coupled to the first end of the first winding of transformer, and second condenser armature of the capacitor arrangement is electrically coupled to The second end of first winding, and the inductor is electrically coupled to the second winding of the transformer.In one example, The ratio of winding of the transformer is one to one.

Although having been presented at least one exemplary embodiment in foregoing detailed description, it should be understood that in the presence of A large amount of modifications.It will also be appreciated that one or more exemplary embodiment described herein is not intended to be limiting in any manner Range, the applicability or configuration of theme claimed.On the contrary, foregoing detailed description will provide use for those skilled in the art In the convenient route map for implementing one or more described embodiments.It should be understood that being limited not departing from by claim In the case where fixed range, various changes can be carried out to the function and arrangement of element, the change is included in submission this patent Known equivalent and foreseeable equivalent when application.