阅读说明：本技术 一种基于反铁磁斯格明子的新型逻辑门电路 (A kind of new logic gate circuit based on antiferromagnetic Skyrmion ) 是由 赵国平 梁雪 赵莉 于 2019-09-23 设计创作，主要内容包括：本发明提供一种基于反铁磁斯格明子的新型逻辑门电路,以十字型反铁磁赛道为基本单元,整个赛道均为同种反铁磁材料。该逻辑门电路具有两个输入端,分别命名为输入端A和输入端B,输入端A与输入端B相邻,对应十字型赛道左端和上端的磁性隧道结,赛道右端的隧道结则为输出端。输入端A、输入端B通过局部垂直注入自旋极化电流产生反铁磁斯格明子,并利用自旋极化电流和磁晶各向异性梯度驱动斯格明子。其中,磁晶各向异性梯度由压控磁晶各向异性效应产生。本发明以斯格明子的存在与否分别代表二进制数据的“1”和“0”,充分结合斯格明子受拓扑保护作用的特点,以及反铁磁材料对外磁场不敏感的特性,使得本发明具有较强的稳定性和抗磁干扰能力。(The present invention provides a kind of new logic gate circuit based on antiferromagnetic Skyrmion, and using cross antiferromagnetic racing track as basic unit, entire racing track is antiferromagnet of the same race.There are two input terminals for logic gates tool, are respectively designated as input terminal A and input terminal B, and input terminal A is adjacent with input terminal B, and the magnetic tunnel junction of corresponding cross racing track left end and upper end, the tunnel knot of racing track right end is then output end.Input terminal A, input terminal B inject spin polarized current by partial vertical and generate antiferromagnetic Skyrmion, and utilize spin polarized current and magnetocrystalline anisotropy gradient-driven Skyrmion.Wherein, magnetocrystalline anisotropy gradient is generated by voltage-controlled magnetocrystalline anisotropy effect.The present invention respectively represents " 1 " and " 0 " of binary data with the presence or absence of Skyrmion; sufficiently combine the characteristics of Skyrmion is by topological protective effect; and the characteristic that antiferromagnet external magnetic field is insensitive, so that the present invention has stronger stability and diamagnetic interference performance.)

1. a kind of new logic gate circuit based on antiferromagnetic Skyrmion, which is characterized in that this logic gates is cross Antiferromagnetic racing track, entire racing track are antiferromagnet of the same race, the magnetic tunnel junction on racing track respectively as input terminal and Output end, there are two input terminals for this logic gates tool, are respectively designated as input terminal A and input terminal B, input terminal A and input terminal B Adjacent, positioned at the left end and upper end of cross racing track, racing track right end tunnel knot is then output end；

Spin polarized current is injected by partial vertical in input terminal A, input terminal B and generates Skyrmion, and utilizes spin polarization Electric current and magnetocrystalline anisotropy gradient-driven Skyrmion, wherein magnetocrystalline anisotropy gradient is imitated by voltage-controlled magnetocrystalline anisotropy It should generate.

2. a kind of new logic gate circuit based on antiferromagnetic Skyrmion according to claim 1, which is characterized in that ten Font antiferromagnetic racing track applies spin polarized current, the vertical racing track where input terminal B on the horizontal racing track where input terminal A Anisotropic gradient then is generated using voltage-controlled magnetocrystalline anisotropy effect, so that the Skyrmion on two racing tracks is ok It is driven.

3. a kind of new logic gate circuit based on antiferromagnetic Skyrmion according to claim 1, which is characterized in that water The cross section of cross antiferromagnetic racing track is regarded as the low region K by flat racing track, and the low region K is low magnetocrystalline anisotropy region；Low K Region can to Skyrmion generate pinning effect, pinning strength depend primarily on the low region K geometric dimension and magnetocrystalline it is each The intensity of anisotropy, only when driving current density is greater than a certain critical current density, Skyrmion can just successfully pass low K Region.

4. a kind of new logic gate circuit based on antiferromagnetic Skyrmion according to claim 1, which is characterized in that defeated Enter and holds length shorter than output end.

5. a kind of new logic gate circuit based on antiferromagnetic Skyrmion according to claim 1, which is characterized in that by A method of the new logic gate circuit based on antiferromagnetic Skyrmion realizes that AND gate calculates are as follows:

The presence of antiferromagnetic Skyrmion represents binary data 1, and there is no represent binary data 0 to antiferromagnetic Skyrmion；

Input terminal A input 0, input terminal B input 1, the driving current density on horizontal racing track where input terminal A, which is necessarily less than, faces Boundary's current density；

Or when input terminal A inputs 1, input terminal B input 0；The driving current density on horizontal racing track where input terminal A must Critical current density must be less than；

Or when input terminal A, input terminal B input 1, a period of time t need to be postponed when applying driving current, but have to control Before the Skyrmion of input terminal B input moves to juncture area, and the driving current on the horizontal racing track where input terminal A Density is necessarily less than critical current density；

Regardless of whether input terminal A inputs Skyrmion, all added with driving current on input terminal A racing track.

6. a kind of new logic gate circuit based on antiferromagnetic Skyrmion according to claim 1, which is characterized in that by A method of the OR door that the new logic gate circuit based on antiferromagnetic Skyrmion is realized calculates are as follows:

The presence of antiferromagnetic Skyrmion represents binary data 1, and there is no represent binary data 0 to antiferromagnetic Skyrmion；

Input terminal A input 0, input terminal B input 1, the driving current density on horizontal racing track where input terminal A, which has to be larger than, faces Boundary's current density；

Or when input terminal A inputs 1, input terminal B input 0；The driving current density on horizontal racing track where input terminal A must Critical current density must be greater than；

Or when input terminal A, input terminal B input 1, a period of time t need to be postponed when applying driving current, but have to control Before the Skyrmion of input terminal B input moves to juncture area, and the driving current on the horizontal racing track where input terminal A Density has to be larger than critical current density；

Regardless of whether input terminal A inputs Skyrmion, all added with driving current on input terminal A racing track.

7. a kind of new logic gate circuit based on antiferromagnetic Skyrmion according to claim 1, which is characterized in that by A kind of new logic gate circuit based on antiferromagnetic Skyrmion realizes the calculation method of NOT gate are as follows:

Only retain the horizontal racing track with an input terminal and an output end, and is respectively set one in the two sides of output end A voltage controls door, local height-regulating magnetocrystalline anisotropy, so that output end becomes a low region K, generates to Skyrmion Pinning effect, and for operation each time, when initial, output end perseverance has a Skyrmion.

8. a kind of new logic gate circuit based on antiferromagnetic Skyrmion according to claim 5 or 6 or 7, special Sign is, realizes that the operation method of the new logic gate circuit based on antiferromagnetic Skyrmion is, after calculating each time, utilizes The Skyrmion on cross antiferromagnetic racing track is disposed in one biggish current impulse.

Technical field

The invention belongs to magnetic device technical fields more particularly to a kind of antiferromagnetic Skyrmion of utilization to realize logical AND Door, logic sum gate and logic inverter.

Background technique

Logic gates is the basic module on integrated circuit, and traditional logic gate can be made of transistor, with output High level and low level signal respectively represent the binary data 1 and 0 in logical operation.Traditional logic gate volume is larger, function Consumption is higher, and Joule heat also will limit its High Density Integration.

Magnetic Skyrmion is a kind of spin structure by topology protection, has certain topological potential barrier, and stability is good.It examines Consider the neighboring magnetic moments arranged anti-parallel in antiferromagnet, the diamagnetic disturbance ability of antiferromagnetic Skyrmion is stronger.Research hair Existing, spin polarized current and magnetocrystalline anisotropy gradient can also effectively drive antiferromagnetic Skyrmion, and compared to iron Magnetic Skyrmion, antiferromagnetic Skyrmion are not in Skyrmion Hall effect during the motion, can be along the side of driving force To linear motion, speed is also bigger than ferromagnetic Skyrmion.If representing binary system with the presence or absence of antiferromagnetic Skyrmion Data 1 and 0, and applied in racing track storage or logical device, the storage density and arithmetic speed of device will be greatly improved, And reduction energy consumption appropriate.

It is disclosed in Chinese utility model patent specification CN201711049783.2 a kind of based on magnetic Skyrmion Reconfigurable logic device.The design be based on single, multiple Skyrmions or without Skyrmion input terminal to output end it Between movement, configured and switched by controlling voltage, realize with, or, with non-or non-, non-logic function.

Although above-mentioned logic gate can be realized a variety of logical operations, but ferromagnetic Skyrmion can generate this during the motion Lattice pine torch Hall effect and drift about, and the design just needs to limit the movement rail of Skyrmion using this drift Mark, to realize the logical operation of gate circuit, the Hall effect of Skyrmion can be influenced by many factors, be had uncertain Property, so the artificial Modulatory character of the logic gate is poor.

Summary of the invention

It is an object of the invention to solve the problems of the above-mentioned prior art, provide a kind of based on antiferromagnetic Si Geming The new logic gate circuit of son.

The present invention adopts the following technical scheme:

A kind of new logic gate circuit based on antiferromagnetic Skyrmion, logic gates are with cross antiferromagnetic racing track Basic unit, entire racing track are antiferromagnet of the same race.Magnetic tunnel junction on racing track is respectively as input terminal and defeated Outlet.

There are two input terminals for logic gates tool, are respectively designated as input terminal A and input terminal B, input terminal A and output end B is adjacent, is the left end and upper end of cross racing track respectively, racing track right end tunnel knot is then output end.

The present invention generates antiferromagnetic Skyrmion by locally vertical injection spin polarized current, and with Skyrmion In the presence of binary data 1 is represented, the 0 of binary data is represented with being not present for Skyrmion.

It carries out driving antiferromagnetic Skyrmion using spin polarized current and magnetocrystalline anisotropy gradient.

It specifically, can by logic gates by the heavy metal layer below the antiferromagnetic racing track of common current Injection Level Generate spin polarized current；Secondly, being superimposed insulating layer and electrode layer above vertical antiferromagnetic racing track, and voltage is added, due to The thickness of insulating layer changes linearly, so, magnetocrystalline anisotropy gradient can produce by voltage-controlled magnetocrystalline anisotropy effect.

Preferably, the present invention generates magnetocrystalline anisotropy gradient using voltage-controlled magnetic anisotropy effect.

Preferably, apply spin polarized current in design on horizontal racing track, and vertical racing track then utilizes voltage-controlled magnetocrystalline Effect of anisotropy generates anisotropic gradient, so that the Skyrmion on two racing tracks can be driven；And two The intersection of racing track is equivalent to the low region K for horizontal racing track.The known local low region K can produce Skyrmion Raw pinning effect, pinning strength depend primarily on the geometric dimension and magnetocrystalline anisotropy intensity in the low region K, only work as driving When current density is greater than a certain critical current density, Skyrmion can just be smoothly through the low region K.

Preferably, comprehensively consider the influence of boundary effect, the design of input terminal length is shorter than output end.

The further technical solution of the present invention is a kind of new logic gate circuit realization based on antiferromagnetic Skyrmion AND gate calculation method is, when realizing the logic computing function of " AND " door, the driving current density on horizontal racing track is necessarily less than Critical current density.It calculates and later disposes the Skyrmion on racing track using a biggish current impulse each time.

Further, a period of time t need to be postponed when applying electric current when input terminal A, input terminal B input " 1 ", but It has to before the Skyrmion that input terminal B is inputted moves to juncture area.

The further technical solution of the present invention is a kind of new logic gate circuit realization OR based on antiferromagnetic Skyrmion Door calculation method is, when realizing the logic computing function of " OR " door, the driving current density on horizontal racing track has to be larger than critical Current density.New logic gate circuit operation method based on antiferromagnetic Skyrmion is calculated each time later using one The Skyrmion on racing track is disposed in a biggish current impulse.

Further, when input terminal A, input terminal B input 1 a period of time t need to be postponed when applying electric current, but must It need be before the Skyrmion that input terminal B is inputted moves to juncture area.

The further technical solution of the present invention is a kind of new logic gate circuit realization based on antiferromagnetic Skyrmion NOT gate calculation method is only to retain the straight racing track of level with an input terminal and an output end, the two of output end A voltage control door, local height-regulating magnetocrystalline anisotropy, so that output end is a low region K is respectively set in side.In addition, Which kind of operation for no matter carrying out NOT gate, when initial, output end perseverance has a Skyrmion.

Beneficial effects of the present invention:

1, Skyrmion is a kind of spin structure by topology protection, has certain topological potential barrier, and antiferromagnetic material The nature of material determines that antiferromagnetic Skyrmion is not very sensitive to externally-applied magnetic field, so the stability of the design is good, resists Magnetic interferences are strong.

2. low energy consumption by the present invention, the electric current magnitude utilized in present invention design is about 10¹⁰A/m², [J.Phys.D: Appl.Phys.50 (2017) 505005] required current density is about in the logic gate based on antiferromagnetic Skyrmion that is proposed It is 10¹³A/m², which is because, not being related to the conversion between Skyrmion and neticdomain wall in present invention design, to drive magnetic Domain wall, required current density is relatively large, secondly, if with Chinese utility model patent specification CN201711049783.2 The ferromagnetic Skyrmion utilized is compared, and under the action of same driving force, the speed of antiferromagnetic Skyrmion is bigger, in other words It says, to obtain same speed, small, therefore the present invention of the ferromagnetic Skyrmion of driving force ratio needed for antiferromagnetic Skyrmion Driving current density can suitably be reduced, to reduce energy consumption.

3. carrier of the Skyrmion as binary data, " 1 " and " 0 " are characterized with the presence or absence of Skyrmion, Its rock-steady structure ensures the accuracy of information and non-volatile, and magnetic domain and Skyrmion are not present during driving Conversion process, therefore accuracy is high, non-easy Shi Xingqiang.

4. antiferromagnetic Skyrmion does not have Skyrmion Hall effect during driven, move along a straight line, and Skyrmion is driven using spin polarized current and magnetic anisotropy gradient simultaneously in the design, the size of the two is Can be with artificial adjustment, therefore subjective control is strong.

Detailed description of the invention

Fig. 1 is the structural schematic diagram of logic " with door " and disjunction gate in the present invention；

Fig. 2 is the structural side view for being used to generate magnetocrystalline anisotropy gradient in Fig. 1 on vertical racing track；

Fig. 3 is the top view of cross antiferromagnetic racing track；

Fig. 4 is the structural schematic diagram of logic " NOT gate " in the present invention；

Fig. 5 is the top view of Fig. 4.

Specific embodiment

To make the object, technical solutions and advantages of the present invention clearer, below by the technical solution in the present invention into Row clearly and completely describes.Obviously, described embodiments are some of the embodiments of the present invention, instead of all the embodiments. Based on the embodiments of the present invention, obtained by those of ordinary skill in the art without making creative efforts all Other embodiments shall fall within the protection scope of the present invention.

As shown in Figure 1,3, a kind of new logic gate circuit based on antiferromagnetic Skyrmion of the invention, logic gates Using cross antiferromagnetic racing track as basic unit.

Magnetic tunnel junction on racing track is respectively as input terminal and output end.

The left end of cross antiferromagnetic racing track and the tunnel knot of upper end are two input terminals of logic gate respectively, are named respectively For input terminal A and input terminal B, racing track right end tunnel knot is then output end.

As shown in Figure 1, the present invention has used two kinds of driving methods of spin polarized current and magnetocrystalline anisotropy gradient simultaneously. It specifically, can by logic gates as shown in Figure 1, by the heavy metal layer below the antiferromagnetic racing track of common current Injection Level Generate spin polarized current；Secondly, as shown in Fig. 2, be superimposed insulating layer and electrode layer above vertical antiferromagnetic racing track, and add Voltage, since the thickness of insulating layer changes linearly, so, magnetocrystalline can produce by voltage-controlled magnetocrystalline anisotropy effect Anisotropic gradient.

As shown in Fig. 2, apply spin polarized current in present invention design on horizontal racing track, and vertical racing track then utilizes pressure It controls magnetocrystalline anisotropy effect and generates anisotropic gradient, so that the Skyrmion on two racing tracks can be driven, And the intersection of two racing tracks is equivalent to the low region K (when the low magnetocrystalline that there is part in racing track is each for horizontal racing track The region of anisotropy is abbreviated as " the low region K "), pinning effect can be generated to Skyrmion, pinning strength depends primarily on low K The geometric dimension and magnetocrystalline anisotropy intensity in region, only when driving current density is greater than a certain critical current density J_cWhen, Skyrmion could smoothly pass through the low region K.

When the logic computing function of realization " AND " door, the driving current density on horizontal racing track is necessarily less than critical electricity Current density J_c.And when realizing " OR " door, driving current density must be greater than critical current density J_c。

In addition, it is contemplated that the influence that boundary effect moves Skyrmion, the ratio of two input terminal Design of length is exported It holds short.

A, B input terminal injects the antiferromagnetic Skyrmion of spin polarized current generation by partial vertical.

Binary data " 1 " and " 0 " are indicated by the presence or absence of antiferromagnetic Skyrmion respectively in logic calculation.Example Such as, a Skyrmion is generated in input terminal A, and the end B does not generate, and is equivalent to realize input terminal A input " 1 ", the input of the end B The operation of " 0 ".

A method of the new logic gate circuit based on antiferromagnetic Skyrmion realizes logical operation:

It realizes logical operation, relates generally to Skyrmion in the generation of input terminal, the transmission on racing track and defeated This three broad aspect of the detection of outlet.

Firstly, injecting spin polarized current by partial vertical in input terminal A, input terminal B generates Skyrmion；Secondly, For driving of the Skyrmion on racing track.The design has used spin polarized current and two kinds of magnetocrystalline anisotropy gradient simultaneously Driving method.

Specifically, as shown in Figure 1, by the heavy metal layer below the antiferromagnetic racing track of common current Injection Level, by spinning Hall effect can produce spin polarized current；Secondly, as shown in Fig. 2, being superimposed insulating layer and electricity above vertical antiferromagnetic racing track Pole layer, and voltage is added, since the thickness of insulating layer changes linearly, so, it can be with by voltage-controlled magnetocrystalline anisotropy effect Generate magnetocrystalline anisotropy gradient.

In addition, when there is the low region K of part in racing track pinning effect, pinning strength can be generated to Skyrmion Depend primarily on the geometric dimension and magnetocrystalline anisotropy intensity in the low region K.In this case, there are a critical current is close Degree, if driving current density is less than this critical value J_c, Skyrmion will be pinned at the low region K, only critical greater than this Value J_cWhen, Skyrmion can just pass through.

In the design, apply spin polarized current on horizontal racing track, and vertical racing track then utilizes voltage-controlled magnetocrystalline different Property effect generate anisotropic gradient so that the Skyrmion on two racing tracks can be driven, and two racing tracks Intersection is equivalent to the low region K for horizontal racing track.Therefore, horizontal when the logic computing function of realization " AND " door Driving current density on racing track is necessarily less than critical current density J_c.When realizing " OR " door, driving current density, which is greater than, faces Boundary's current density, J_c。

It calculates and later disposes the Skyrmion on racing track using a biggish current impulse each time below.

As shown in Figure 1, detailed process is as follows:

For " OR ", " AND " door

(1) when input terminal A inputs " 1 ", and input terminal B inputs " 0 ", if J < J_c, Skyrmion moves to the friendship of two racing tracks It will be moved downward along magnetocrystalline anisotropy gradient at boundary, to realize the operation " 10=0 " of " AND " door；And J > J_cWhen, this Lattice pine torch moves to output end under the action of spin polarized current, to realize the logical operation " 1+0=1 " of " OR " door.

(2) when input terminal A inputs " 0 ", input terminal B inputs " 1 ", when Skyrmion moves to the intersection of two racing tracks, by It is less than critical current J in driving current_c, so Skyrmion can still be moved downward along magnetocrystalline anisotropy gradient, thus real The logical operation " 01=0 " of existing " AND " door；Conversely, working as J > J_cWhen, Skyrmion moves under the action of spin polarized current To output end, to realize the logical operation " 0+1=1 " of " OR " door.

(3) when input terminal A, input terminal B input " 1 ", and J < J_cWhen, apply electric current when need to postpone a period of time t (but Have to before the Skyrmion that input terminal B is inputted moves to juncture area), to ensure that the Skyrmion on vertical racing track is transported When moving intersection, Skyrmion on horizontal racing track just on the left of it near region, at this point, due between Skyrmion The Skyrmion of repulsive interaction, the right will be expelled from the low region K by the Skyrmion in left side, so that gone out by exclusion Skyrmion smoothly reaches output end under the driving of polarization current, and remaining Skyrmion cannot be across the low region K, it will It can move downward.It is achieved that the operation " 11=1 " of " AND " door；Work as J > J_c, the Skyrmion of front smoothly reaches output End, and the latter is due to the repulsive interaction and geometry restriction effect between Skyrmion, it will bury in oblivion from the intersection of two racing tracks, To realize the logical operation " 1+1=1 " of " OR " door；

(4) when input terminal A, input terminal B input " 0 ", " AND " and " OR " door is all exported without signal, that is, is realized The operation " 0+0=0 " of " OR " door, " the logical operation 00=0 of AND gate ".

As shown in Figure 4,5, for " NOT " door:

Structure explanation

Only retain the straight racing track of level with an input terminal and an output end, and distinguishes in the two sides of output end One voltage control door, local height-regulating magnetocrystalline anisotropy, so that output end is a low region K are set.In addition, no matter into Which kind of operation of row NOT gate, when initial, output end perseverance has a Skyrmion.

(1) defeated since the driving current density on horizontal racing track is less than critical current density when input terminal inputs " 0 " Skyrmion in outlet cannot break the energy barrier in the high region K on the right side of output end, so output end is still rested on, thus It realizes that the logical operation of " NOT " door inputs " 0 ", exports " 1 ".

(2) when input terminal inputs " 1 ", since the driving current density on horizontal racing track is less than critical current, so working as The left side that the Skyrmion of input terminal moves to output end will be pinned.And because of the interaction between Skyrmion, Skyrmion in output end will be extruded output end, then move right under the action of electric current.Finally, output end does not have Skyrmion exports " 0 " to realize the logical operation input " 1 " of " NOT " door；

For antiferromagnetic Skyrmion in the detection of output end, " tunnelling " anisotropic magneto-resistive effect or spin pump can be used Pu effect is realized.

It calculates and later disposes the Skyrmion on racing track using a biggish current impulse each time.

Finally, it should be noted that the above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although Present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that: it still may be used To modify the technical solutions described in the foregoing embodiments or equivalent replacement of some of the technical features； And these are modified or replaceed, technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution spirit and Range.