Light is sintered particle preparation method, light sintering target preparation method and light sintering method
阅读说明：本技术 光烧结粒子制备方法、光烧结靶制备方法及光烧结方法 (Light is sintered particle preparation method, light sintering target preparation method and light sintering method ) 是由 金学成 黄现俊 吴敬焕 金德中 于 2018-04-19 设计创作，主要内容包括：本发明提供光烧结粒子制备方法。根据一实施例,可包括：准备纳米粒子的步骤；以及以所要形成上述纳米粒子的基板的热导率为基准,在上述纳米粒子的表面形成厚度互不相同的氧化膜的步骤。(The present invention provides light and is sintered particle preparation method.According to an embodiment, it may include: the step of preparing nanoparticle；And on the basis of the thermal conductivity of the substrate to be formed above-mentioned nanoparticle, in the step of surface of above-mentioned nanoparticle forms thickness mutually different oxidation film.)
1. a kind of light is sintered particle preparation method characterized by comprising
The step of preparing nanoparticle；And
On the basis of the thermal conductivity of substrate to be formed above-mentioned nanoparticle, it is mutual that thickness is formed on the surface of above-mentioned nanoparticle The step of different oxidation film.
2. light according to claim 1 is sintered particle preparation method, which is characterized in that
In the step of forming above-mentioned oxidation film,
In the case where the thermal conductivity of aforesaid substrate is less than preset reference value, the oxidation film of first thickness is formed in above-mentioned nanoparticle The surface of son, in the case where the thermal conductivity of aforesaid substrate is greater than preset reference value, the oxidation film of second thickness is formed in above-mentioned The surface of nanoparticle,
Above-mentioned first thickness is less than above-mentioned second thickness.
3. light according to claim 2 is sintered particle preparation method, which is characterized in that above-mentioned preset reference value is 1W/mK.
4. light according to claim 2 is sintered particle preparation method, which is characterized in that above-mentioned first thickness is above-mentioned nanometer The 1~3% of particle diameter, above-mentioned second thickness are the 3~10% of above-mentioned diameter of nano particles.
5. a kind of light is sintered target preparation method characterized by comprising
The step of preparing nanoparticle；
On the basis of the thermal conductivity of substrate to be formed above-mentioned nanoparticle, it is mutual that thickness is formed on the surface of above-mentioned nanoparticle The step of different oxidation film；And
Making the nanoparticle for being formed with above-mentioned oxidation film includes adhesive resin come the step of preparing electric conductivity target.
6. light according to claim 5 is sintered target preparation method, which is characterized in that
In the step of forming above-mentioned oxidation film,
In the case where the thermal conductivity of aforesaid substrate is less than preset reference value, the oxidation film of first thickness is formed in above-mentioned nanoparticle The surface of son, in the case where the thermal conductivity of aforesaid substrate is greater than preset reference value, the oxidation film of second thickness is formed in above-mentioned The surface of nanoparticle,
Above-mentioned first thickness is less than above-mentioned second thickness.
7. light according to claim 6 is sintered target preparation method, which is characterized in that above-mentioned preset reference value is 1W/mK.
8. light according to claim 6 is sintered target preparation method, which is characterized in that above-mentioned first thickness is above-mentioned nanoparticle The 1~3% of sub- diameter, above-mentioned second thickness are the 3~10% of above-mentioned diameter of nano particles.
9. a kind of smooth sintering method characterized by comprising
On the basis of the thermal conductivity of substrate to be formed above-mentioned nanoparticle, it is mutual that thickness is formed on the surface of above-mentioned nanoparticle The step of different oxidation film；
Making the nanoparticle for being formed with above-mentioned oxidation film includes adhesive resin come the step of preparing electric conductivity target；
In the step of aforesaid substrate forms prepared above-mentioned electric conductivity target；And
The step of light sintering is carried out to the electric conductivity target for being formed in aforesaid substrate.
10. smooth sintering method according to claim 9, which is characterized in that
In the step of forming above-mentioned oxidation film,
In the case where the thermal conductivity of aforesaid substrate is less than preset reference value, the oxidation film of first thickness is formed in above-mentioned nanoparticle The surface of son, in the case where the thermal conductivity of aforesaid substrate is greater than preset reference value, the oxidation film of second thickness is formed in above-mentioned The surface of nanoparticle, above-mentioned first thickness are less than above-mentioned second thickness,
In the above-mentioned carry out light sintering the step of,
In the case where the thermal conductivity of aforesaid substrate is less than preset reference value, the light of the first intensity is irradiated to aforesaid substrate, upper The thermal conductivity of substrate is stated greater than in the case where preset reference value, the light of the second intensity is irradiated to aforesaid substrate, above-mentioned first intensity Less than above-mentioned second intensity.
11. a kind of light is sintered particle preparation method characterized by comprising
It is determined the need for forming oxygen on the surface of above-mentioned nanoparticle according to the characteristic of the substrate for the nanoparticle of being formed The step of changing film；And
In the case where needing to form oxidation film on the surface of above-mentioned nanoparticle, oxidation is formed on the surface of above-mentioned nanoparticle The step of film.
12. light according to claim 11 is sintered particle preparation method, which is characterized in that the characteristic of aforesaid substrate is thermal conductivity Rate is judged as in the case where above-mentioned thermal conductivity is 1W/mK or more and needs to form oxidation film on the surface of above-mentioned nanoparticle.
13. light according to claim 11 is sintered particle preparation method, which is characterized in that include the feelings of silicon in aforesaid substrate Under condition, it is judged as and needs to form oxidation film on the surface of above-mentioned nanoparticle.
14. a kind of light is sintered target preparation method characterized by comprising
It is determined the need for forming oxygen on the surface of above-mentioned nanoparticle according to the characteristic of the substrate for the nanoparticle of being formed The step of changing film；
In the case where needing to form oxidation film on the surface of above-mentioned nanoparticle, oxidation is formed on the surface of above-mentioned nanoparticle The step of film；And
Making the nanoparticle for being formed with above-mentioned oxidation film includes adhesive resin come the step of preparing electric conductivity target.
15. light according to claim 14 is sintered target preparation method, which is characterized in that the characteristic of aforesaid substrate is thermal conductivity Rate is judged as in the case where above-mentioned thermal conductivity is 1W/mK or more and needs to form oxidation film on the surface of above-mentioned nanoparticle.
16. light according to claim 14 is sintered target preparation method, which is characterized in that the case where aforesaid substrate includes silicon Under, it is judged as and needs to form oxidation film on the surface of above-mentioned nanoparticle.
17. a kind of smooth sintering method characterized by comprising
It is determined the need for forming oxygen on the surface of above-mentioned nanoparticle according to the characteristic of the substrate for the nanoparticle of being formed The step of changing film；
In the case where needing to form oxidation film on the surface of above-mentioned nanoparticle, oxidation is formed on the surface of above-mentioned nanoparticle The step of film；
Making the nanoparticle for being formed with above-mentioned oxidation film includes adhesive resin come the step of preparing electric conductivity target；
In the step of aforesaid substrate forms prepared above-mentioned electric conductivity target；And
The step of light sintering is carried out to the electric conductivity target for being formed in aforesaid substrate.
Technical field
The present invention relates to light sintering particle preparation method, light sintering target preparation method and light sintering methods, more specifically, relating to And light is improved by the oxidation film on the surface for controlling nanoparticle and is sintered the light sintering particle preparation method of validity, light sintering Target preparation method and light sintering method.
Background technique
Recently, with the development of electronic engineering technology and information technology, the utilization of portable electronic device is gradually increased.Mesh Before, most electronic product is manufactured by photo-mask process.But photo-mask process includes the steps that 12 or more, it is very multiple Miscellaneous, process cost is high, manufacturing time is long, and therefore can cause environmental pollution using many toxic chemical substances.Therefore, it is Replace this photo-mask process, just positive research printed electronic.
Printed electronic means the electronic product that pattern is formed by the printing process of silk-screen printing, intaglio printing etc..This It is formed by the simple procedures of totally three steps such as printing, drying, sintering, compared to previous photo-mask process, has that price is low, ring Protect, have the advantages that flexibility, large area mass production, low temperature/simple procedures etc., thus be concerned.Therefore, printed electronic can Suitable for various electronic products such as flexible electronic product, solar batteries.
There is sintering in the core technology of the electronic device of printing, according to sintering method and condition, determines sintered figure The conductivity of case and the quality of pattern.As the sintering method of previous conductive ink, at present with sintering methods, but It is sintered under 300 DEG C or more of hot conditions, therefore, it is impossible to be suitable as the flexible base board of substrate of new generation, when process Between it is long and need chamber, thus be not suitable for mass production.
Therefore, as new sintering method, laser sintered method, plasma agglomeration method, microwave sintering method etc., but they are proposed It is also not suitable for mass production, therefore, the present inventor proposes the extremely short glistening light of waves sintering method of white light.
Summary of the invention
Technical problem
The technical purpose of the invention to be realized is, provides the characteristic for considering substrate and there is the light of high-efficiency to burn Tie particle preparation method, light sintering target preparation method and light sintering method.
The another technical purpose of the invention to be realized is, provides and also carries out light sintering in silicon substrate with high quality Light is sintered particle preparation method, light sintering target preparation method and light sintering method.
Another technical purpose of the invention to be realized is, provides the light sintering particle with outstanding process convenience Preparation method, light sintering target preparation method and light sintering method.
What the present invention to be realized is there are also a technical purpose, provides the light sintering grain with outstanding price competitiveness Sub- preparation method, light sintering target preparation method and light sintering method.
The another technical purpose of the invention to be realized is, provides the light sintering particle preparation side of easy mass production Method, light sintering target preparation method and light sintering method.
The technical purpose of the invention to be realized is not limited to item as described above.
Solution to problem
The light of one embodiment of the invention is sintered particle preparation method can include: the step of preparing nanoparticle；And with institute It is formed on the basis of the thermal conductivity of the substrate of above-mentioned nanoparticle, it is mutually different to form thickness on the surface of above-mentioned nanoparticle The step of oxidation film.
According to an embodiment, in the step of forming above-mentioned oxidation film, it is less than preset reference in the thermal conductivity of aforesaid substrate In the case where value, the oxidation film of first thickness is formed in the surface of above-mentioned nanoparticle, is greater than in the thermal conductivity of aforesaid substrate pre- If in the case where a reference value, the oxidation film of second thickness is formed in the surface of above-mentioned nanoparticle, above-mentioned first thickness is smaller than Above-mentioned second thickness.
According to an embodiment, above-mentioned preset reference value can be 1W/mK.
According to an embodiment, above-mentioned first thickness can be the 1~3% of above-mentioned diameter of nano particles, and above-mentioned second thickness can It is the 3~10% of above-mentioned diameter of nano particles.
The light of one embodiment of the invention is sintered target preparation method can include: the step of preparing nanoparticle；To be formed On the basis of the thermal conductivity of the substrate of above-mentioned nanoparticle, the mutually different oxidation film of thickness is formed on the surface of above-mentioned nanoparticle The step of；And the nanoparticle for being formed with above-mentioned oxidation film is made to include adhesive resin come the step of preparing electric conductivity target.
According to an embodiment, in the step of forming above-mentioned oxidation film, it is less than preset reference in the thermal conductivity of aforesaid substrate In the case where value, the oxidation film of first thickness is formed in the surface of above-mentioned nanoparticle, is greater than in the thermal conductivity of aforesaid substrate pre- If in the case where a reference value, the oxidation film of second thickness is formed in the surface of above-mentioned nanoparticle, above-mentioned first thickness is smaller than Above-mentioned second thickness.
According to an embodiment, above-mentioned preset reference value can be 1W/Mk.
According to an embodiment, above-mentioned first thickness can be the 1~3% of above-mentioned diameter of nano particles, and above-mentioned second thickness can It is the 3~10% of above-mentioned diameter of nano particles.
The light sintering method of one embodiment of the invention can include: to be formed the thermal conductivity of the substrate of above-mentioned nanoparticle On the basis of, in the step of surface of above-mentioned nanoparticle forms thickness mutually different oxidation film；Make to be formed with above-mentioned oxidation film Nanoparticle include adhesive resin come the step of preparing electric conductivity target；Prepared above-mentioned electric conductivity is formed in aforesaid substrate The step of target；And the step of light sintering is carried out to the electric conductivity target for being formed in aforesaid substrate.
According to an embodiment, in the step of forming above-mentioned oxidation film, it is less than preset reference in the thermal conductivity of aforesaid substrate In the case where value, the oxidation film of first thickness is formed in the surface of above-mentioned nanoparticle, is greater than in the thermal conductivity of aforesaid substrate pre- If in the case where a reference value, the oxidation film of second thickness is formed in the surface of above-mentioned nanoparticle, above-mentioned first thickness is less than upper State second thickness, the above-mentioned carry out light sintering the step of in, in the case where the thermal conductivity of aforesaid substrate is less than preset reference value, The light of first intensity is irradiated to aforesaid substrate, in the case where the thermal conductivity of aforesaid substrate is greater than preset reference value, the second intensity Light to aforesaid substrate irradiate, above-mentioned first intensity be less than above-mentioned second intensity.
Another embodiment of the present invention is put into light sintering particle preparation method can include: according to the base for the nanoparticle of being formed The characteristic of plate come determine the need for above-mentioned nanoparticle surface formed oxidation film the step of；And it is needing to receive above-mentioned In the case that the surface of rice corpuscles forms oxidation film, in the step of surface of above-mentioned nanoparticle forms oxidation film.
According to another embodiment, the characteristic of aforesaid substrate is thermal conductivity, in the situation that above-mentioned thermal conductivity is 1W/mK or more Under, it can determine whether to need to form oxidation film on the surface of above-mentioned nanoparticle.
According to another embodiment, it in the case where aforesaid substrate includes silicon, can determine whether to need in above-mentioned nanoparticle Surface forms oxidation film.
The light of another embodiment of the present invention is sintered target preparation method can include: according to the substrate for the nanoparticle of being formed Characteristic come determine the need for above-mentioned nanoparticle surface formed oxidation film the step of；It is needing in above-mentioned nanoparticle In the case that surface forms oxidation film, in the step of surface of above-mentioned nanoparticle forms oxidation film；And make to be formed with above-mentioned The nanoparticle of oxidation film includes adhesive resin come the step of preparing electric conductivity target.
According to another embodiment, the characteristic of aforesaid substrate is thermal conductivity, in the situation that above-mentioned thermal conductivity is 1W/mK or more Under, it can determine whether to need to form oxidation film on the surface of above-mentioned nanoparticle.
According to another embodiment, it in the case where aforesaid substrate includes silicon, can determine whether to need in above-mentioned nanoparticle Surface forms oxidation film.
The light sintering method of another embodiment of the present invention can include: according to the characteristic of the substrate for the nanoparticle of being formed come It determines the need for the step of the surface of above-mentioned nanoparticle forms oxidation film；Needing the surface shape in above-mentioned nanoparticle In the case where at oxidation film, in the step of surface of above-mentioned nanoparticle forms oxidation film；Make to be formed with receiving for above-mentioned oxidation film Rice corpuscles includes adhesive resin come the step of preparing electric conductivity target；Prepared above-mentioned electric conductivity target is formed in aforesaid substrate Step；And the step of light sintering is carried out to the electric conductivity target for being formed in aforesaid substrate.
The effect of invention
The light sintering method of one embodiment of the invention can include: can be there is best light sintering characteristic according to substrate type Mode the step of forming and control the oxidation film of copper nano-particle；Preparation includes the conductive ink of macromolecule adhesive resin The step of；In the step of substrate prints (printing) and dry (drying) above-mentioned conductive ink；And it is dodged using from xenon The step of white light of light light irradiation carries out light sintering to the above-mentioned pattern of printing.
An embodiment according to the present invention, under room temperature/atmospheric conditions, within several milliseconds (1~1000ms) very In the short time, it can restore and sintering oxidation epithelium, easy mass production have the electronic device of high conductivity and reliability.
It, can also be into for the previous silicon substrate for being difficult to carry out light sintering process in particular, an embodiment according to the present invention Row light sintering process, can expand the type of be applicable in substrate.
Detailed description of the invention
Fig. 1 is the flow chart for illustrating the light sintering method of one embodiment of the invention.
Fig. 2 is the figure for illustrating the step S150 of the light sintering method of one embodiment of the invention.
Fig. 3 is the figure for illustrating the light sintering method of another embodiment of the present invention.
Fig. 4 is the chart for illustrating the resistance of the thickness based on substrate type and oxidation film.
Fig. 5 is the oxidation film high resolution transmission electron microscope (HR-TEM) for illustrating to be formed according to the type of substrate Photo.
Fig. 6 is the sintering front and back X-ray for showing the oxide thickness for the electric conductivity target for being formed in polyimides (PI) substrate The chart of diffraction (XRD) variation.
Fig. 7 is that X-ray diffraction changes before and after showing the sintering of the oxide thickness for the electric conductivity target for being formed in silicon substrate Chart.
Fig. 8 is the scanning electron microscope for showing the oxide thickness for the electric conductivity target for being formed in polyimide substrate (SEM) photo.
Fig. 9 is the electron scanning micrograph for showing the oxide thickness for the electric conductivity target for being formed in silicon substrate.
Specific embodiment
Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.But technical idea of the invention is not limited to In embodiment described herein, other forms can be embodied as.Instead, the embodiment introduced herein becomes revealed content More comprehensively, completely, and those skilled in the art is made to fully understand thought of the invention.
In the present specification, when referring to that a structural element is located on another structural element, it is meant that be formed directly into Intervention has third structural element between on another structural element or both.Also, in the accompanying drawings, in order to effectively illustrate in technology Hold, the thickness in film and region is exaggerated.
Also, in the various embodiments of this specification, the first, second, third, etc. term is wanted for describing various structures Element, these structural elements are not limited to above-mentioned term.These terms are only used to distinguish a structural element to want with another structure Element.Therefore, first structure element in one embodiment can be the second structural element of another embodiment.Illustrate herein and illustrates Each embodiment include their complementary embodiment.Also, in the present specification, "and/or" means to include that front and back is enumerated At least one of structural element.
In the description, different unless expressly stated, otherwise singular expression includes the expression of plural number.Also, " comprising " Or the terms such as " having " are used to specify the feature recorded on specification, number, step, structural element or their combination, without Be exclude one or more other features or number, step, structural element or their combination presence or it is additional can It can property.Also, in the present specification, " connection " means to be indirectly connected with multiple structural elements or be directly connected to multiple structures to want Element.
Also, hereinafter, during illustrating the present invention, when being judged as illustrating not for related known function or structure When necessarily obscuring purport of the invention, it will be omitted and illustrated.
Fig. 1 is the flow chart for illustrating the light sintering method of one embodiment of the invention.Referring to Fig.1, illustrate that light is burnt together It ties particle preparation method and light is sintered target preparation method.Fig. 2 is the step for illustrating the light sintering method of one embodiment of the invention The figure of rapid S150.
Referring to Fig.1, the light sintering method of one embodiment of the invention can include: step S110 provides nanoparticle；Step S120 forms thickness mutually not on the surface of nanoparticle on the basis of the thermal conductivity of substrate to be formed above-mentioned nanoparticle Identical oxidation film；Step S130, making the nanoparticle for being formed with above-mentioned oxidation film includes adhesive resin to prepare electric conductivity Target；Step S140 forms prepared above-mentioned electric conductivity target in aforesaid substrate；And step S150, to being formed in aforesaid substrate Electric conductivity target carry out light sintering the step of.Hereinafter, illustrating each step.
Step S110
In step s 110, it is possible to provide nanoparticle.Above-mentioned nanoparticle can be by least one of gold, silver, copper substance It is formed.Hereinafter, unless specifically mentioned otherwise, assuming that nanoparticle is copper nano-particle.
Step S120
In the step s 120, on the basis of the thermal conductivity of substrate to be formed above-mentioned nanoparticle, in nanoparticle Surface can form the mutually different oxidation film of thickness.
For example, aforesaid substrate can be flexible base board, it can also be rigid substrate.For example, substrate can be by printing paper, poly- terephthaldehyde Sour second diester (PET), paper, polybutylene terephthalate, polyethylene terephthalate, polysulfones, polyethers, polyetherimide, Polyethylene naphthalate (PEN), acrylic resin, heat resistance epoxy (Epoxy), BT epoxy/glass fiber, vinyl acetate At least one of resin (EVA), butyl rubber resin, polyarylate, polyimides material is constituted.Also, for solar-electricity Pond and semiconductor devices, can be by glass, amorphous silicon (armophous silicon), monocrystalline silicon (mono-crystaline Silicon), at least one of polysilicon (poly-crystaline silicon) and ceramics material are constituted.
In the case, according to the characteristic of substrate, such as thermal conductivity, flexibility, the controllable preparation of being formed in is received The thickness of the oxidation film on the surface of rice corpuscles.For example, substrate can have the thermal conductivity and flexible such as in the record of table 1 according to its type Characteristic.
Table 1
According to an embodiment, in the case where thermal conductivity is less than preset benchmark, the oxidation film of first thickness can be formed in The surface of nanoparticle can form the second thickness thicker than first thickness in the case where thermal conductivity is greater than preset benchmark Oxidation film.More specifically, the thermal conductivity of substrate be less than 1W/mK in the case where, thickness be less than diameter of nano particles 1% to 3% oxidation film can be formed in the surface of nanoparticle, in the case where the thermal conductivity of substrate is greater than 1W/mK, with a thickness of nanometer The oxidation film of the 3% to 10% of particle diameter can be formed in the surface of nanoparticle.
According to an embodiment, oxidation film can be formed on the surface of above-mentioned nanoparticle by various methods.For example, can be used It heats the method to be aoxidized in air using chamber (chamber), hot plate (hot plate) etc., may be used at preparation Pass through the side that plasma (plasma) processing or additional post-processing (post treatment) are aoxidized after nanoparticle Method, however, it is not limited to this.Also, above-mentioned oxide thickness can adjust simultaneously heating temperature (heating temperature), One or more of oxidization time (oxidation time) or partial pressure of oxygen (oxygen partial pressure) Combination is to control.
Can through the above steps S110 and step S120 prepare one embodiment of the invention light sintering particle.Hereinafter, explanation Step S130.
Step S130
In step s 130, can make the nanoparticle for being formed with above-mentioned oxidation film includes adhesive resin to prepare electric conductivity Target.In the case, electric conductivity target means that light is sintered target, it will be appreciated that is the concept comprising light fired-ink and paste.
In order to improve the dispersibility and reproducibility of prepared above-mentioned smooth fired-ink, adhesive resin can be added.For example, Above-mentioned adhesive resin may include polyvinylpyrrolidone (PVP), polyvinyl alcohol (PVA), polyvinyl butyral, poly- second two Alcohol, polymethyl methacrylate, glucan, azo be double and at least one of sodium dodecyl benzene sulfonate substance.In this situation Under, adhesive divides rate that can be 1~50 weight percent.If also, the weight average molecular weight of adhesive is very low, disperses or goes back Former effect reduces, and in the case where the weight average molecular weight of adhesive is greater than 500000, forms solidifying body, it is therefore preferred that using The adhesive that weight average molecular weight is 10000~500000.According to the thickness of the oxidation film of copper nano-particle, the type of adhesive and Additive amount can be different.
It can be sintered in particle in the light prepared by step S110 and step S120 and carry out step S130, to form light sintering Target.Hereinafter, illustrating step S140.
Step S140
In step S140, prepared above-mentioned light sintering target can be formed in aforesaid substrate.
Above-mentioned light sintering target can be formed in aforesaid substrate by various methods.For example, silk-screen printing (screen can be used Printing), ink jet printing (inkjet printing), micro-contact printing (micro-contactprinting), coining (imprinting), intaglio printing (gravure printing), intaglio offset (gravure-offset printing), soft At least one of property version printing (Flexography printing) and spin coating (spincoating) method.
Also, the light sintering target for being formed in aforesaid substrate can cross range drying by drying (drying).For example, being formed in State substrate light sintering target can by air-heater, baking oven (heat chamber), hot plate (hotplate), infrared ray or they Combination drying.Drying temperature can be set to the temperature of not wounded substrate.In the case where substrate is polymeric substrates, drying temperature It can be in the range of 60~150 DEG C.
Step S150
In step S150, target can be sintered to the light for being formed in substrate and carry out light sintering.Light is sintered target can be by from xenon lamp Transmitting extremely short wave white light-receiving luminous energy and carry out light sintering come it is conductive.In above-mentioned smooth sintering process, need to irradiate Fully luminous energy can just be such that oxidation film is reduced to be sintered, and in the case where moment irradiating high-energy, need to prevent base The impaired situation of plate.Therefore, in order to improve sintering effect, the light of can be by for gradually reduction-oxidation film the step of is sintered skill and technique The step of being irradiated white light.
To help to understand, together referring to part (a) of Fig. 2, the state of light sintering target 20 is formed in the one side in substrate 10 Under, target 20 being sintered to light by xenon flash lamp 30, light 50 is provided.It in the case, can be in xenon flash lamp to improve light efficiency The reflector 40 (reflector) to subject reflected light is arranged in 30 side.
In the case, it can be combined to the light that light sintering target provides by various variables.For example, such as the part (b) institute of Fig. 2 Show, light can control to provide the variable of time, luminous intensity, light pulse etc..For example, the condition of the light provided is according to impulse amplitude (0.01~50ms), pulse gap (0.01~100ms), number of pulses (1~100 time), luminous intensity (0.1~100J/cm2) Variation and it is different, total light energy maximum can have 100J/cm as a result,2Light energy.
It in the case, can be different according to substrate for the energy range of sintering.For example, in the thermal conductivity of aforesaid substrate In the case where less than preset reference value, the light of the first intensity is irradiated to aforesaid substrate, is greater than in the thermal conductivity of aforesaid substrate default In the case where a reference value, than the first intensity, the light of the second strong intensity can be irradiated to aforesaid substrate.More specifically, in the heat of substrate In the case that conductance is less than 1W/mK, luminous intensity can have less than 0.1J/cm2To 20J/cm2Range, it is big in the thermal conductivity of substrate In the case where 1W/mK, luminous intensity can have 20J/cm2To 100J/cm2Range.
More than, the light sintering particle preparation method, light sintering target system of one embodiment of the invention are illustrated referring to FIG. 1 and FIG. 2 Preparation Method and light sintering method.Hereinafter, illustrating the mechanism of one embodiment of the invention.
Consider the light sintering mechanism of substrate properties
Mechanism (mechanism) using the rapidly light sintering process of extremely short wave white light is as follows, that is, if irradiating from xenon lamp White light pulse luminous energy to target is reached, then luminous energy is converted to thermal energy rise the temperature moment of target layer, so that target layer exists It is sintered in the very short time.Therefore, light sintering characteristic is according to absorbance (light absorption), the warm for including target layer The physical property of substrate including capacity (heat capacity), thermal conductivity (thermalconductivity) and it is different, therefore, need With the sintering atmosphere according to light sintering characteristic, light irradiation condition and nanoparticle are controlled.But previous, base is not recognized The physical property of plate has with light sintering variable to be associated with, accordingly, it is difficult to improve light sintering efficiency.In particular, high with thermal conductivity studying During substrate is the scheme that object carries out light sintering, have difficulties.
The present inventor provides the Technical Solving for considering substrate properties.
In order to make light sintering target reduction and sintering, light, which is sintered target and/or the temperature of nanoparticle, need to reach specific temperature water It is flat.In in terms of the hot transmitting, the thermal conductivity of substrate is higher, then slave light sintering more rapidly targets substrate transferring heat energy, therefore, In order to which the luminous energy for being sintered to light sintering target and irradiating (irradiation) is got higher.Therefore, the thermal conductivity of such as silicon etc. is high Material be used as substrate in the case where, the case where compared to the thermal conductivities such as polymer low substrate is used, need the light of high-energy Irradiation time.
As a result, in the case where thermal conductivity high silicon substrate, due to high thermal conductivity, by substrate seize to light be sintered target into Thermal energy needed for row sintering, therefore, the thickness thickness of only oxidation film could improve light sintering characteristic.Also, in thick oxidation film In, the thermal conductivity of substrate is higher, then makes to be sintered required light irradiation energy and become larger, and in the case, can prevent light sintering target combustion It burns or from strippable substrate.
Unlike this, in the feelings of the low polymeric substrates of thermal conductivity (polyimides, polyethylene terephthalate etc.) Under condition, to minimize the damage (damage) of substrate, it need to make to be sintered required luminous energy minimum, therefore, the oxygen of nanoparticle The thickness for changing film is thinner, then light sintering characteristic more can be improved.
Therefore, an embodiment according to the present invention provides thin oxide film and low strong in the case where the thermal conductivity of substrate is low The sintering light of degree in the case where the thermal conductivity of substrate is high, provides the sintering light of thick oxide film and high intensity unlike this, The conductivity characteristics of target are sintered to improve light and can realize the stability of substrate.
Fig. 3 is the figure for illustrating the light sintering method of another embodiment of the present invention.Referring to Fig. 3, also illustrate that light is burnt together It ties particle preparation method and light is sintered target preparation method.
Referring to Fig. 3, the light sintering method of another embodiment of the present invention can include: step S210 provides nanoparticle；Step S220 determines the need for forming oxygen on the surface of above-mentioned nanoparticle according to the characteristic of the substrate for the nanoparticle of being formed Change film；Step S230, in the case where needing to form oxidation film on the surface of above-mentioned nanoparticle, in the table of above-mentioned nanoparticle Face forms oxidation film；Step S240, making the nanoparticle for being formed with above-mentioned oxidation film includes adhesive resin to prepare electric conductivity Target；Step S250 forms prepared above-mentioned electric conductivity target in aforesaid substrate；And step S260, to being formed in aforesaid substrate Electric conductivity target carry out light sintering.Hereinafter, illustrating each step.In the case, the step that will be omitted with illustrate referring to Fig.1 before The explanation of rapid duplicate part.
Step S210 is corresponding with step S110, and therefore, omission is illustrated.
In step S220, it can be judged whether to need according to the characteristic of the substrate for the nanoparticle of being formed in above-mentioned nanometer The surface of particle forms oxidation film.
It can determine whether according to an embodiment in the case where the characteristic of substrate such as the thermal conductivity of substrate are greater than preset benchmark To need to form oxidation film on the surface of nanoparticle.It in the case, can be 1W/mK according to the thermal conductivity of preset benchmark.
Unlike this, it in the case where the type of substrate such as substrate include silicon, can determine whether to need in nanoparticle Surface forms oxidation film.
It, can be to nanometer in the case where the judging result judgement of step S220 not necessarily forms oxidation film in step S230 The surface of particle provides oxidation film.
Step S240, step S250 and S260 is corresponding with step S130, step S140 and S150 respectively, therefore, will save Slightly illustrate.
According to the embodiment illustrated referring to Fig. 3 as described above, can judge whether to form oxygen by the characteristic according to substrate The step of changing film can account for the light sintering of the characteristic of substrate.
It is repeated according to the effect for the characteristic for considering substrate with the content for illustrating you referring to FIG. 1 and FIG. 2 before, therefore, will be saved Slightly illustrate.Hereinafter, illustrating the characteristic of the embodiment of the present invention referring to Fig. 4 to Fig. 9.
Fig. 4 is the chart for illustrating the resistance according to substrate type and oxide thickness, and Fig. 5 is for illustrating according to base The high resolution transmission electron microscope photo for the oxidation film that the type of plate is formed, Fig. 6 are to show to be formed in polyimide substrate Electric conductivity target oxide thickness sintering before and after X-ray diffraction variation chart, Fig. 7 is to show to be formed in leading for silicon substrate The chart of X-ray diffraction variation before and after the sintering of the oxide thickness of electrical target, Fig. 8 is to show to be formed in polyimide substrate The electron scanning micrograph of the oxide thickness of electric conductivity target, Fig. 9 are the oxygen for showing the electric conductivity target for being formed in silicon substrate Change the electron scanning micrograph of film thickness.
In order to test, embodiment 1 is prepared to embodiment 6.
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