阅读说明：本技术 拾取方法、拾取装置和安装装置 (Pick-up method, pick device and mounting device ) 是由 岩出卓 新井义之 稻垣润 于 2018-03-08 设计创作，主要内容包括：本发明的课题在于降低粘接力等保持力的影响而可靠性高地进行半导体芯片的拾取和安装。具体而言,提供拾取方法,通过最表层具有半导体芯片载持面(13)的静电转移板来拾取半导体芯片(1),其特征在于,该拾取方法至少具有如下的工序：带电工序,在半导体芯片载持面(13)上形成期望的带电图案；以及拾取工序,将所排列的多个半导体芯片(1)中的半导体芯片(1)根据期望的带电图案而吸附于半导体芯片载持面(13),从而选择性地拾取半导体芯片(1)。(Problem of the present invention is that reducing the pickup and installation of the influence of the retentivities such as bonding force and high reliability progress semiconductor chip.Specifically, pick-up method is provided, by most surface layer there is semiconductor chip to hold the electrostatic transfer plate in face (13) to pick up semiconductor chip (1), it is characterized in that, the pick-up method at least has following process: electrification process holds in semiconductor chip and forms desired charged pattern on face (13)；And pickup process, semiconductor chip (1) in the multiple semiconductor chips (1) arranged is adsorbed in semiconductor chip and holds face (13) according to desired charged pattern, to selectively pick up semiconductor chip (1).)

1. a kind of pick-up method by most surface layer there is semiconductor chip to hold the electrostatic transfer plate in face to pick up semiconductor core Piece, which is characterized in that

The pick-up method at least has following process:

Process is charged, is held in the semiconductor chip and forms desired charged pattern on face；And

Pickup process, by the semiconductor chip in the multiple semiconductor chips arranged according to the desired electrification Pattern and be adsorbed in the semiconductor chip and hold face, to selectively pick up the semiconductor chip.

2. pick-up method according to claim 1, which is characterized in that

The electrostatic transfer plate has insulating layer, and the surface of the insulating layer is that the semiconductor chip holds face, in the band In electrician's sequence, the electrode for being applied with high voltage is made selectively to hold face contact or close with the semiconductor chip, thus The semiconductor chip of the electrostatic transfer plate, which is held, forms the desired charged pattern on face.

3. pick-up method according to claim 1, which is characterized in that

The electrostatic transfer plate has the insulating layer with photoconductivity, and the surface of the insulating layer is that the semiconductor chip carries Face is held,

The electrification process is partly led by following uniform charged process and exposure process in the described of the electrostatic transfer plate Body chip, which is held, forms the desired charged pattern on face,

The uniform charged process makes the semiconductor chip hold face equably to charge,

The exposure process holds face irradiation luminous energy to the semiconductor chip according to the desired charged pattern.

4. a kind of pick device by most surface layer there is semiconductor chip to hold the electrostatic transfer plate in face to pick up semiconductor core Piece, which is characterized in that

The pick device at least includes

Charged pattern forms device, holds in the semiconductor chip and forms desired charged pattern on face；

Mounting table is arranged with multiple semiconductor chips；And

Electrostatic transfer plate transfer head carries out transfer to the electrostatic transfer plate,

The electrostatic transfer plate is transferred load to the mounting table by the electrostatic transfer plate transfer head, according to the desired band electrograph The semiconductor chip being arranged in multiple semiconductor chips in the mounting table is selectively adsorbed in institute by case It states semiconductor chip and holds face, to be picked up.

5. pick device according to claim 4, which is characterized in that

The electrostatic transfer plate has insulating layer, and the surface of the insulating layer is that the semiconductor chip holds face, the electrification Patterning device makes the electrode for being applied with voltage selectively hold face contact or close with the semiconductor chip, thus The semiconductor chip of the electrostatic transfer plate, which is held, forms the desired charged pattern on face.

6. pick device according to claim 4, which is characterized in that

The insulating layer has photoconductivity, and the surface of the insulating layer is that the semiconductor chip holds face,

The charged pattern forms device and includes

Uniform charged device makes the semiconductor chip hold face and equably charges；And

Exposure device holds face irradiation luminous energy to the semiconductor chip according to the desired charged pattern.

7. a kind of mounting device, which is characterized in that

The semiconductor that the mounting device will be picked up by pick device described in any one in claim 4~6 Chip is installed on substrate together.

8. mounting device according to claim 7, which is characterized in that

The semiconductor chip is the LED chip with 50 50 μm of projected areas below of μ m.

Technical field

The present invention relates to pick up the pick-up method of desired semiconductor chip from the multiple semiconductor chips arranged, pick up Take device and mounting device.

Background technique

It about semiconductor chip, is minimized, and for high speed, accurately install to reduce cost The effort of the semiconductor chip of miniaturization.In particular, the LED for display requires to install at high speed with several μm of precision to be claimed For 50 μ m, 50 μm of LED chips below of miniature LED.

Describe following structure in patent document 1: to clathrate formation, semiconductor chip irradiates on the wafer Band-like laser, to be transferred to transfer base substrate 200 together according to every a line or every multirow, then to being transferred to transfer base substrate Multiple semiconductor chips after 200 irradiate band-like laser, are transferred to transfer base substrate 300 together according to every a line or every multirow.

Summary of the invention

Problems to be solved by the invention

But structure documented by patent document 1 has the following problems: by semiconductor chip from a transfer base substrate Shift (pickups) extremely another transfer base substrate when, due to the influence of the bonding force that remains semiconductor chip etc., worry can not be from one A transfer base substrate separates and be transferred to another transfer base substrate with can not be successfully.

The present invention solves the above problems a little, and project is to eliminate the influence of bonding force etc. to which high reliability carries out half The pickup and installation of conductor chip.

Means for solving the problems

In order to solve the above problems, the present invention provides pick-up method, by most surface layer there is semiconductor chip to hold face Electrostatic transfer plate picks up semiconductor chip, which is characterized in that the pick-up method at least has following process: electrification process, It is held in the semiconductor chip and forms desired charged pattern on face；And pickup process, multiple described half will arranged The semiconductor chip in conductor chip is adsorbed in the semiconductor chip and holds face according to the desired charged pattern, To selectively pick up the semiconductor chip.

According to this structure, had electrostatic is utilized to pick up semiconductor chip, so as to eliminate the shadow of bonding force etc. It rings and the pickup of high reliability progress semiconductor chip.

Following structure can also be used: the electrostatic transfer plate has insulating layer, and the surface of the insulating layer is described Semiconductor chip holds face, in the electrification process, make to be applied with the electrode of high voltage selectively with the semiconductor core Piece holds face contact or close, thus the electrostatic transfer plate the semiconductor chip hold formed on face it is described desired Charged pattern.

According to this structure, desired charged pattern can be reliably formed.

Following structure can also be used: the electrostatic transfer plate has the insulating layer with photoconductivity, the insulation The surface of layer is that the semiconductor chip holds face, and the electrification process passes through following uniform charged process and exposure process It is held in the semiconductor chip of the electrostatic transfer plate and forms the desired charged pattern on face, the homogeneous band electrician Sequence makes the semiconductor chip hold face equably to charge, and the exposure process is according to the desired charged pattern and to described Semiconductor chip holds face irradiation luminous energy.

According to this structure, desired charged pattern can be also reliably formed.

In addition, in order to solve the above problems, the present invention provides pick device, carried by most surface layer with semiconductor chip The electrostatic transfer plate in face is held to pick up semiconductor chip, which is characterized in that the pick device at least includes charged pattern and forms dress It sets, is held in the semiconductor chip and form desired charged pattern on face；Mounting table is arranged with multiple semiconductor cores Piece；And electrostatic transfer plate transfer head, transfer is carried out to the electrostatic transfer plate, the electrostatic transfer plate transfer head will be described Electrostatic transfer plate transfers load to the mounting table, multiple in the mounting table by being arranged according to the desired charged pattern The semiconductor chip in the semiconductor chip is selectively adsorbed in the semiconductor chip and holds face and be picked up.

According to this structure, had electrostatic is utilized to pick up semiconductor chip, so as to eliminate the shadow of bonding force etc. It rings and the pickup of high reliability progress semiconductor chip.

Following structure can also be used: the electrostatic transfer plate has insulating layer, and the surface of the insulating layer is described Semiconductor chip holds face, the charged pattern formed device make to be applied with the electrode of voltage selectively with the semiconductor core Piece holds face contact or close, thus the electrostatic transfer plate the semiconductor chip hold formed on face it is described desired Charged pattern.

According to this structure, desired charged pattern can be reliably formed.

Following structure can also be used: the insulating layer has photoconductivity, and the surface of the insulating layer is described half Conductor chip holds face, and the charged pattern forms device and includes uniform charged device, and the semiconductor chip is made to hold face Equably charge；And exposure device, face irradiation is held to the semiconductor chip according to the desired charged pattern Luminous energy.

According to this structure, desired charged pattern can be also reliably formed.

Following structure can also be used: the semiconductor chip picked up by pick device is mounted on base together On plate.

According to this structure, the influence of bonding force etc. can be eliminated and high reliability carries out electrostatic transfer plate is picked up half The installation of conductor chip.

Following structure can also be used: the semiconductor chip is with 50 μ m, 50 μm of projected areas below LED chip.

According to this structure, it can be realized the display equipment of fine.

Invention effect

Pick-up method, pick device and mounting device according to the present invention can eliminate the influence of bonding force etc. and reliable Property highland carry out semiconductor chip pickup and installation.

Detailed description of the invention

Fig. 1 be in the embodiment of the present invention 1 mounting table electrification process and carrier substrate separation process be illustrated Figure.

Fig. 2 is the figure being illustrated to the electrification process in the embodiment of the present invention 1.

Fig. 3 is the figure being illustrated to the first half of the pickup process in the embodiment of the present invention 1.

Fig. 4 is the figure being illustrated to the latter half of the pickup process in the embodiment of the present invention 1.

Fig. 5 is the figure being illustrated to the installation procedure in the embodiment of the present invention 1.

Fig. 6 is the figure being illustrated to the uniform charged process in the embodiment of the present invention 2.

Fig. 7 is the figure being illustrated to the exposure process in the embodiment of the present invention 2.

Specific embodiment

[embodiment 1]

Referring to Fig.1~Fig. 5 is illustrated the embodiment of the present invention 1.Fig. 1 is to the mounting in the embodiment of the present invention 1 The figure that platform electrification process and carrier substrate separation process are illustrated.Fig. 2 be to the electrification process in the embodiment of the present invention 1 into The figure of row explanation.Fig. 3 is the figure being illustrated to the first half of the pickup process in the embodiment of the present invention 1.Fig. 4 is to this The figure that the latter half of pickup process in the embodiment 1 of invention is illustrated.Fig. 5 is to the peace in the embodiment of the present invention 1 The figure that dress process is illustrated.

As shown in (b) of Fig. 1, (c) of Fig. 1, semiconductor chip 1 grows and is formed in the carrier substrate being made of sapphire On 3, another face in the face as the side opposite with the face kept by carrier substrate 3 of semiconductor chip 1 is in outside Expose and is formed with convex block 2.In addition, carrier substrate 3 has round or quadrangle, other than sapphire, there is also by arsenic The carrier substrate that gallium is constituted.In addition, semiconductor chip 1 be two-dimensionally arranged with by cutting and on carrier substrate 3 it is multiple (hundreds of ~tens of thousands of).It is 50 μ m, 50 μm of sizes below in the case where small-sized semiconductor chip 1 of referred to as miniature LED, Spacing arrangement obtained by cutting width is added according to the size.Such small-sized semiconductor chip 1 requires (example with high precision Such as 1 μm of precision below) it is mounted on circuit substrate.For the semiconductor chip 1 in embodiment 1, in advance to each semiconductor core Piece 1 is checked, undesirable LED chip is removed.Specifically, the laser that the case where irradiation is than aftermentioned laser lift-off is strong, burns Fall bad chip.

Firstly, in order to which the semiconductor chip 1 for being kept carrier substrate 3 and carrier substrate 3 is stably maintained at mounting table On 50, as shown in (a) of Fig. 1, executes mounting table and charge process, charge the whole surface of mounting table 50.It is charged in mounting table In process, the whole surface on the surface and mounting table 50 that make mounting table Charging system 60 is in contact with or close to application about 1KV is just Voltage 70.Mounting table 50 includes: platform 51 is made of metals such as iron；And insulator 52, it is made of, is arranged in platform glass On the surface of 51 that side contacted with mounting table Charging system 60.Positive voltage is applied to the insulator 52 of the mounting table 50, To which the whole surface of mounting table 50 has positive potential.

In addition, in embodiment 1, making mounting table 50 with positive potential, but be not necessarily limited to this, can changing as appropriate.Example Such as, negative potential can also be had.In this case, it is arranged according to electrification, by materials structures such as Teflon (registered trademark) or polypropylene At insulator 52.

In addition, in embodiment 1, in order to charge the surface of mounting table 50, using making mounting table Charging system 60 The whole surface of surface and mounting table 50 in contact with or close to structure, but be not necessarily limited to this, can change as appropriate.Such as it can also To be configured to contact this with the surface of mounting table 50 with torch using according to band torch obtained by a column arrangement corona discharge portion Or it is close, and make to relatively move on the direction vertical with the orientation in corona discharge portion relative to mounting table 50 with torch. Thereby, it is possible in simple structure charge the surface of mounting table 50.

Then, after removing mounting table Charging system 60, by carrier substrate transfer head (not shown) by a face quilt Another face for the multiple semiconductor chips 1 being maintained on carrier substrate 3 is placed in (reference in the mounting table 50 charged on surface (b) of Fig. 1).Another face for the semiconductor chip 1 that carrier substrate 3 is kept as a result, is maintained at mounting table 50 by electrostatic On.

Then, carrier substrate separation process is executed, a face of semiconductor chip 1 is separated from carrier substrate 3.Implementing In example 1, by carrier substrate separator (not shown), what irradiation linear to carrier substrate 3 was made of excimer laser swashs Light 90, and make any one opposite shifting on the direction vertical with the line of laser 90 in carrier substrate 3 or the laser 90 of threadiness It is dynamic, to 3 overall exposure laser ((c) referring to Fig.1) of carrier substrate.Also, make in the carrier substrate 3 being made of sapphire A part of GaN layer resolves into Ga and N, so that semiconductor chip 1 be separated from carrier substrate 3.This method is referred to as laser stripping From.Carrier substrate 3 after separation can be removed by carrier substrate transfer head 20.

More than, semiconductor chip 1 to be installed is held in mounting table 50.Then, parallel with carrier substrate separation process Ground or after carrier substrate separation process, executes electrification process, by most surface layer there is semiconductor chip to hold face 13 Electrostatic transfer plate 10 picks up semiconductor chip 1 (referring to Fig. 2).Electrostatic transfer plate 10 have the plate 11 that is made of metals such as iron with And the insulating layer 12 positioned at the side of plate 11.In the present specification, by the table of the side opposite with 11 side of plate of the insulating layer 12 Face is known as semiconductor chip and holds face.In electrification process, semiconductor chip is made to hold face 13 and charged pattern formation device 30 In contact with or close to forming desired charged pattern on face 13 to hold in semiconductor chip.

That is, as shown in Fig. 2, charged pattern forms multiple projection electrodes obtained by device 30 is protruded with a part on surface Portion 31 and multiple non-projecting portion 32 not outstanding.The positive voltage 40 that device 30 applies about 1KV is formed to charged pattern, it is prominent Between arrangement of the electrode portion 31 according to the desired semiconductor chip 1 being arranged in multiple semiconductor chips 1 in mounting table 50 It is two-dimensionally protruded (on the depth direction of Fig. 2) away from consistent spacing.Using electrostatic transfer plate transfer head 20 to electrostatic transfer Plate 10 carries out vacuum suction and is kept, and so that the semiconductor chip of electrostatic transfer plate 10 is held face 13 and is formed with the charged pattern The front end in the projection electrode portion 31 of device 30 in contact with or close to.

Also, the high voltage for forming the projection electrode portion 31 of device 30 by being applied to charged pattern, makes electrostatic transfer plate 10 semiconductor chip contacted with projection electrode portion 31 holds the part in face 13 with positive potential.That is, making and charged pattern shape At the semiconductor core for the electrostatic transfer plate 10 that the desired region in projection electrode portion 31 formed in device 30 is contacted Piece holds face 13 with positive potential, forms desired charged pattern.At this point, sometimes in addition to actually being contacted with projection electrode portion 31 Part other than, also charge surrounding small region, thus can also according to be less than desired region contact area Mode constitute projection electrode portion 31.

That is, can form device 30 in electrification process by charged pattern and form desired charged pattern, the electrification Patterning device 30 is formed with non-projecting portion 32, makes to apply so that the semiconductor chip for electrostatic transfer plate 10 holds face 13 The projection electrode 31 of voltage is contacted with desired region, makes the projection electrode 31 for being applied with voltage not and other than desired region Region contact.

In addition, in embodiment 1, being configured to make to have the band electrograph in multiple projection electrode portions 31 and multiple non-projecting portion 32 Case forms device 30 and the semiconductor chip of electrostatic transfer plate 10 holds face 13 in contact with or close to form desired band electrograph Case, but it is not necessarily limited to this, it can change as appropriate.Such as it is also configured to contact single electrode portion while moving Or the insulating layer 12 close to electrostatic transfer plate 10, to form desired charged pattern.That is, being applied in electrification process by making Added the electrode of high voltage selectively with insulating layer 12 in contact with or close to and form desired charged pattern.

In addition, in embodiment 1, being configured to form desired band electrograph in the way of picking up multiple semiconductor chips 1 Case, but it is not necessarily limited to this, it can change as appropriate.Such as it is also configured in the way of picking up a semiconductor chip 1 Form desired charged pattern.

In addition, in embodiment 1, making electrostatic transfer plate 10 with positive potential, but be not necessarily limited to this, can suitably becoming More.Such as negative potential can also be had.In this case, it is arranged according to electrification, by materials such as Teflon (registered trademark) or polypropylene Material constitutes insulating layer 12.

Then, it is picked up electrostatic transfer plate 10 with 1 overlying contact of semiconductor chip in mounting table 50, will The current potential being had in advance to the surface of mounting table 50 before being picked up is de-energized.Except electricity can be removed by light electric discharge or AC Electricity etc. carries out mounting table 50.When being de-energized, sometimes due to electrostatic and keep mounting table 50 semiconductor chip 1 jump It is dynamic, therefore be de-energized before it will be picked up by electrostatic transfer plate 10.

Then, execute pickup process, make the semiconductor chip in the multiple semiconductor chips arranged according to Desired charged pattern and be adsorbed in semiconductor chip and hold face 13, to selectively pick up semiconductor chip.That is, according to Desired charged pattern and the electrostatic transfer plate 10 that charges is adsorbed by electrostatic transfer plate transfer head 20 and transfers load to 50 institute of mounting table The semiconductor chip 1 (referring to (a) of Fig. 3) of mounting, the charged pattern desirably of electrostatic transfer plate 10 and charge half Conductor chip holds face 13 and is contacted in the way of being selectively overlapped with semiconductor chip 1 (referring to (b) of Fig. 3).And And left with electrostatic transfer plate transfer head 20 from mounting table 50, electrostatic transfer plate 10 also leaves from mounting table 50.At this point, with The corresponding multiple semiconductor chips 1 of desired charged pattern are adsorbed on electrostatic transfer plate 10 by electrostatic to be picked (referring to Fig. 4).

Here, if being picked up according to desired charged pattern, without the collection from the semiconductor chip 1 in mounting table 50 The specific position closed is picked up, and can be picked up from arbitrary portion.

In embodiment 1, the spacing and the comparable semiconductor chip 1 of the number of permutations of substrate are selectively picked up and are installed on, So as to efficiently be transferred to aftermentioned installation procedure.

In addition, in embodiment 1, being configured to the electricity that will be had on the surface of mounting table 50 in advance before pickup process Position removal, but it is not necessarily limited to this, it can change as appropriate.Such as also it may be constructed are as follows: the surface of mounting table 50 is still charged, in band The semiconductor chip of electrostatic transfer plate 10 is set to hold face 13 with the current potential higher than the current potential that mounting table 50 is had in electrician's sequence (such as 2KV or so) and execute pickup process.Do not need to carry out as a result, the current potential that is had of surface of mounting table 50 except electricity, And semiconductor chip 1 can be easily picked up.

Then, installation procedure is executed, the semiconductor chip 1 that electrostatic transfer plate 10 is kept is installed on substrate 80.That is, quiet Electrotransfer plate transfer head 20 adsorbs electrostatic transfer plate 10 and transfers load to substrate 80, half that electrostatic transfer plate 10 is kept Conductor chip 1 is installed on substrate 80.During installation, the convex block 2 of semiconductor chip 1 and the electricity of substrate 80 are carried out by metal bonding The engagement of pole (referring to (a) of Fig. 5).Then, electrostatic transfer plate transfer head 20 release vacuum suction and from electrostatic transfer plate 10 from It opens, so that electrostatic transfer plate 10 and semiconductor chip 1 remain on substrate 80, completes installation procedure.That is, electrostatic transfer plate transfer First 20 install the semiconductor chip 1 that electrostatic transfer plate 10 is picked up with electrostatic transfer plate 10 together.

Then, carry out electrostatic transfer plate 10 as needed removes electricity, can go electrostatic transfer plate 10 from semiconductor chip 1 It removes.Except electricity can be by light electric discharge or AC except electricity etc. is to the progress of electrostatic transfer plate 10.In addition, semiconductor chip 1 is engaged with substrate, If therefore electrostatic transfer plate 10 electrification it is lighter, even if without except electricity, also can using electrostatic transfer plate transfer head 20 into It is vacuum adsorbed and remove electrostatic transfer plate 10.

In addition, in embodiment 1, being configured to carry out transfer to carrier substrate by carrier substrate transfer head, passing through electrostatic Transfer blade transfer head carries out transfer to electrostatic transfer plate, but is not necessarily limited to this, can change as appropriate.Such as it is also configured to Transfer is carried out to carrier substrate and electrostatic transfer plate by general transfer head.

In this way, in embodiment 1, providing pick-up method, turned by the electrostatic that there is semiconductor chip to hold face on most surface layer Plate is moved to pick up semiconductor chip, which is characterized in that

The pick-up method at least has following process:

Process is charged, is held in the semiconductor chip and forms desired charged pattern on face；And

Pickup process, by the semiconductor chip in the multiple semiconductor chips arranged according to described desired Charged pattern and be adsorbed in the semiconductor chip and hold face, to selectively pick up the semiconductor chip, picked up by this Method is taken, the peace of the influence of bonding force etc. and the semiconductor chip that high reliability progress electrostatic transfer plate is picked up can be eliminated Dress.

Additionally, it is provided pick device, by most surface layer there is semiconductor chip to hold the electrostatic transfer plate in face to pick up Semiconductor chip, which is characterized in that

The pick device at least includes

Charged pattern forms device, holds in the semiconductor chip and forms desired charged pattern on face；

Mounting table is arranged with multiple semiconductor chips；And

Electrostatic transfer plate transfer head carries out transfer to the electrostatic transfer plate,

The electrostatic transfer plate is transferred load to the mounting table by the electrostatic transfer plate transfer head, according to the desired band Electrical pattern selectively adsorbs the semiconductor chip being arranged in multiple semiconductor chips in the mounting table Hold face in the semiconductor chip, to be picked up, by the pick device, the influence of bonding force etc. can be eliminated and can The installation for the semiconductor chip that electrostatic transfer plate is picked up is carried out by property highland.

[embodiment 2]

In the embodiment of the present invention 2, charged pattern forms device and the structure of electrification process is different from embodiment 1.Reference Fig. 6, Fig. 7 are illustrated embodiment 2.Fig. 6 is the figure being illustrated to the uniform charged process in the embodiment of the present invention 2. Fig. 7 is the figure being illustrated to the exposure process in the embodiment of the present invention 2.

In example 2, charged pattern forms electrification process performed by device by uniform charged process and exposure process It constitutes.