阅读说明：本技术 一种碱性溶液去除掩模脏污的方法 (Method for removing mask dirt by alkaline solution ) 是由 华卫群 尤春 杨长华 刘维维 顾梦星 刘浩 汪志得 莫金圻 于 2021-08-23 设计创作，主要内容包括：本发明公开了一种碱性溶液去除掩模脏污的方法,包括浸泡装置和清洗液,浸泡装置包括缸、花篮、搅棒,清液液的原料组成包括98％的氢氧化钠、去离子水、SPM溶液和SC1溶液,本发明的有益效果如下：通过使用氢氧化钠溶液浸泡掩模,便于掩模表面的脏污泡软,并将脏污剥离掩模表面,解决现有技术中因去胶不彻底产生的脏污无法去除的难点,降低因为脏污导致的产品报废,节约生产成本,缩减产品交付周期,本发明实施简单、方便；花篮内部卡接有掩模,便于卡接三个不同尺寸的掩模；花篮每四分钟上下移动一次,使得浸泡更加充分。(The invention discloses a method for removing mask dirt by using alkaline solution, which comprises a soaking device and cleaning solution, wherein the soaking device comprises a cylinder, a flower basket and a stirring rod, and the cleaning solution comprises 98% of sodium hydroxide, deionized water, SPM solution and SC1 solution, and has the following beneficial effects: the mask is soaked by the sodium hydroxide solution, so that the dirt on the surface of the mask is conveniently soaked and softened, and the dirt is stripped from the surface of the mask, the difficulty that the dirt cannot be removed due to incomplete photoresist removal in the prior art is solved, the product scrap caused by the dirt is reduced, the production cost is saved, the product delivery cycle is shortened, and the method is simple and convenient to implement; the mask is clamped in the flower basket, so that the masks with three different sizes can be conveniently clamped; the flower basket moves up and down once every four minutes, so that the soaking is more sufficient.)

1. The method for removing the mask stains by using the alkaline solution is characterized by comprising a soaking device and a cleaning solution, wherein the soaking device comprises a cylinder, a flower basket and a stirring rod, and the cleaning solution comprises 98% of sodium hydroxide, deionized water, an SPM solution and an SC1 solution.

2. The method according to claim 1, wherein the length, width, height and dimension of the solution tank are 22cm, 22cm and 25cm, respectively, and the 98% sodium hydroxide solution and the deionized water are mixed with each other in the solution tank to prepare a mixture solution with a concentration of 0.8mol/L to 1.5 mol/L.

3. The method for removing mask contamination with alkaline solution as claimed in claim 2, wherein the mixture is left to stand for 20-30 minutes, three bayonets with different sizes are designed on the basket to match with the size of the mask, and the mask is clamped inside the basket.

4. The method of claim 3, wherein the basket is placed inside a jar, the basket is moved up and down every four minutes, the basket is soaked for 25-30 minutes, and the mask is soaked in deionized water for 10-20 minutes.

5. The method as claimed in claim 1, wherein the mask is cleaned by mixing SPM solution with SC1 solution, wherein the SPM solution is a mixture of concentrated sulfuric acid and hydrogen peroxide at a mixing ratio of 4: 1.

6. The method of claim 1, wherein the mask is spun through a high speed centrifuge at a speed of 1200 rpm.

7. The method for removing mask smudge of claim 1, comprising the following steps:

(1) firstly, putting 98% sodium hydroxide solution and deionized water into a cylinder for preparation, and stirring by using a stirring rod;

(2) then standing the mixed solution until the solution turns clear from turbidity, and placing the flower basket with the mask in a cylinder for cleaning;

(3) the mask was then soaked in deionized water to remove residual sodium hydroxide solution and oxidized to carbon dioxide by cleaning the organics on the mask with SPM solution in combination with SC1 solution.

(4) Finally, the mask is spun dry by using a high speed centrifuge.

Technical Field

The invention discloses a method for removing mask dirt by using an alkaline solution, and belongs to the technical field of mask cleaning.

Background

A mask is a mold used in the semiconductor industry that carries a design pattern and through which light is transmitted to transmit the design pattern through a photoresist.

In the mask manufacturing technology, a photoresist removing process usually adopts mixed solution of concentrated sulfuric acid and hydrogen peroxide, SPM strong oxidizing property can remove photoresist, the temperature can reach 120-150 ℃ instantly in the photoresist removing process, wherein part of photoresist is denatured due to contact with high-temperature environment and generates carbonization, the carbonized photoresist is firmly adsorbed on the surface of a mask, the denatured photoresist and carbide cannot be removed by adopting the existing SPM solution and the SC1 solution cleaning technology, the pattern light transmission loss rate reaches 80%, the product quality is seriously influenced and the product needs to be scrapped, on the basis of the existing technology, sodium hydroxide solution soaking pretreatment is added before SPM cleaning, so that dirty bubbles attached to the surface of the mask can be softened, the dirty is stripped from the surface of the mask, the cleaning effect is achieved, and the sodium hydroxide solution cannot damage the mask pattern.

Disclosure of Invention

The invention aims to solve the technical problems that the existing SPM solution is matched with an SC1 solution cleaning technology, denatured photoresist and carbide cannot be removed, the light transmission loss rate of a pattern reaches 80 percent, the product quality is seriously influenced, and scrapping treatment is needed.

In order to achieve the purpose, the invention provides the following technical scheme: the method for removing the mask stains by using the alkaline solution comprises a soaking device and a cleaning solution, wherein the soaking device comprises a cylinder, a flower basket and a stirring rod, and the cleaning solution comprises 98% of sodium hydroxide, deionized water, an SPM solution and an SC1 solution.

Preferably, the length, width, height and dimension of the solution cylinder are 22cm, 22cm and 25cm respectively, the 98% sodium hydroxide solution and the deionized water are mixed with each other in the solution cylinder to prepare a mixed solution with the concentration of 0.8 mol/L-1.5 mol/L, and the sodium hydroxide solution is used for soaking pretreatment, so that the dirt attached to the surface of the mask can be soaked and softened, and the dirt can be peeled off from the surface of the mask, thereby achieving the cleaning effect.

Preferably, the mixed solution is kept still for 20-30 minutes, three bayonets which are different in size and are matched with the mask size are designed on the flower basket, and the mask is clamped in the flower basket, so that the three masks different in size can be clamped conveniently.

Preferably, the flower basket is placed in the solution cylinder, the flower basket moves up and down once every four minutes, the soaking time of the flower basket is 25-30 minutes, and the mask is placed in deionized water to be soaked for 10-20 minutes, so that the residual sodium hydroxide solution on the surface can be cleaned conveniently.

Preferably, the mask is cleaned by mixing an SPM solution with an SC1 solution, wherein the SPM solution is a mixed solution of concentrated sulfuric acid and hydrogen peroxide with a mixing ratio of 4:1, so that dirt can be conveniently removed.

Preferably, the mask is spun-dried by a high-speed centrifuge at a speed of 1200 rpm, facilitating drying of the mask.

Preferably, the method comprises the following preparation steps:

(1) firstly, putting 98% sodium hydroxide solution and deionized water into a cylinder for preparation, and stirring by using a stirring rod;

(2) then standing the mixed solution until the solution turns clear from turbidity, and placing the flower basket with the mask in a cylinder for cleaning;

(3) then, the mask is placed in deionized water for soaking, residual sodium hydroxide solution is removed, organic matters on the mask are cleaned by using SPM solution and SC1 solution, and the organic matters are oxidized into carbon dioxide;

(4) finally, the mask is spun dry by using a high speed centrifuge.

Compared with the prior art, the invention has the following beneficial effects:

the mask is soaked by the sodium hydroxide solution, so that the dirt on the surface of the mask is conveniently soaked and softened, and the dirt is stripped from the surface of the mask, the difficulty that the dirt cannot be removed due to incomplete photoresist removal in the prior art is solved, the product scrap caused by the dirt is reduced, the production cost is saved, the product delivery cycle is shortened, and the method is simple and convenient to implement; the mask is clamped in the flower basket, so that the masks with three different sizes can be conveniently clamped; the flower basket moves up and down once every four minutes, so that the soaking is more sufficient.

Detailed Description

The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In order to achieve the purpose, the invention provides the following technical scheme: the method for removing the mask stains by using the alkaline solution comprises a soaking device and a cleaning solution, wherein the soaking device comprises a cylinder, a flower basket and a stirring rod, and the cleaning solution comprises 98% of sodium hydroxide, deionized water, an SPM solution and an SC1 solution.

The length, width, height and size of the solution cylinder are 22cm, 22cm and 25cm respectively, and the 98% sodium hydroxide solution and the deionized water are mixed with each other in the solution cylinder to prepare a mixed solution with the concentration of 0.8 mol/L-1.5 mol/L.

The mixed liquid is kept stand for 20-30 minutes, three bayonets which are different in size and are adaptive to the size of the mask are designed on the flower basket, and the mask is clamped inside the flower basket.

The flower basket is placed in the solution cylinder, the flower basket moves up and down once every four minutes, the soaking time of the flower basket is 25-30 minutes, and the mask is placed in deionized water to be soaked for 10-20 minutes.

The mask is cleaned by matching an SPM solution with an SC1 solution, wherein the SPM solution is a mixed solution of concentrated sulfuric acid and hydrogen peroxide with a mixing ratio of 4: 1.

The mask is dried through a high-rotation-speed centrifuge, and the rotation speed of the high-rotation-speed centrifuge is 1200 rpm.

Specifically, the method comprises the steps of mixing a 98% sodium hydroxide solution and deionized water in a solution cylinder, stirring by using a stirring rod to prepare a mixed solution with the concentration of 0.8-1.5 mol/L, standing the mixed solution for 20-30 minutes to enable the turbid solution to be clear, clamping a mask on a flower basket, soaking the mask with the flower basket in the cylinder, moving the flower basket up and down every four minutes to enable the soaking to be more uniform, soaking the flower basket for 25-30 minutes to enable dirty stains on the surface of the mask to be soft, stripping the dirty stains from the surface of the mask, soaking the mask in the deionized water for 10-20 minutes to enable the residual sodium hydroxide solution on the surface of the mask to be removed, cleaning the mask by matching an SPM solution with an SC1 solution, and oxidizing organic matters on the mask into carbon dioxide by using the SPM solution, the SC1 solution can remove fine particles on the surface of the mask, and finally the mask is placed into a high-speed centrifuge, the rotating speed of the high-speed centrifuge is adjusted to 1200 r/min, water stains are thrown off, and the mask is convenient to dry.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.