Manufacturing equipment and method for ion beam polishing atoms for in-situ shape detection of quartz hemispherical harmonic oscillator

文档序号:1790469 发布日期:2021-11-05 浏览:24次 中文

阅读说明:本技术 石英半球谐振子原位形性检测离子束抛光原子制造装备及方法 (Manufacturing equipment and method for ion beam polishing atoms for in-situ shape detection of quartz hemispherical harmonic oscillator ) 是由 张振宇 张富旭 孟凡宁 万省作 吴斌 顾秦铭 刘冬冬 于 2021-08-06 设计创作,主要内容包括:本发明提供一种石英半球谐振子原位形性检测离子束抛光原子制造装备及方法,装备包括数控系统、安装在机床上的微尺度移动平台装置以及安装在机床底座上的原位形性检测装置、频差检测装置、离子束加工装置、传送装置和工作台,数控系统接收由原位形性检测装置测得的石英半球谐振子形位精度和轮廓及由频差检测装置测得的石英半球谐振子频差,进行精确计算,生成指令传送回微尺度移动平台装置,带动夹具进行移动,同时控制离子束加工装置,对石英半球谐振子进行精密加工。本发明可显著降低废品率,对石英半球谐振子高质高效地进行精密加工。(The invention provides a manufacturing device and a manufacturing method for ion beam polishing atoms for in-situ shape detection of a quartz hemispherical resonator, wherein the manufacturing device comprises a numerical control system, a micro-scale mobile platform device arranged on a machine tool, an in-situ shape detection device, a frequency difference detection device, an ion beam processing device, a transmission device and a workbench, wherein the in-situ shape detection device, the frequency difference detection device, the ion beam processing device, the transmission device and the workbench are arranged on a base of the machine tool, the numerical control system receives the shape and position precision and the outline of the quartz hemispherical resonator measured by the in-situ shape detection device and the frequency difference of the quartz hemispherical resonator measured by the frequency difference detection device, carries out accurate calculation, generates a command and transmits the command back to the micro-scale mobile platform device, drives a clamp to move, and controls the ion beam processing device to carry out accurate processing on the quartz hemispherical resonator. The invention can obviously reduce the rejection rate and precisely process the quartz hemispherical harmonic oscillator with high quality and high efficiency.)

1. A quartz hemisphere harmonic oscillator orthomorphism detects ion beam polishing atom and makes equipment, characterized by that, includes: the system comprises a numerical control system, a microscale mobile platform device arranged on a machine tool, and an orthomorphism detection device, a frequency difference detection device, an ion beam processing device, a conveying device and a workbench which are arranged on a base of the machine tool, wherein the numerical control system is used for controlling the operation of each device, the conveying device is used for conveying a quartz hemisphere harmonic oscillator to be subjected to finish machining and finished finish machining to enter and exit the machine tool, a clamp used for clamping the quartz hemisphere harmonic oscillator is arranged on the microscale mobile platform device, the movement and rotation of the quartz hemisphere harmonic oscillator carried by the clamp are realized through the microscale mobile platform device, and the clamp is used for clamping the quartz hemisphere harmonic oscillator to be positioned in an area above the workbench during detection and processing; the in-situ shape detection device is used for detecting the shape and position precision and the outline of the quartz hemispherical harmonic oscillator, the frequency difference detection device is used for detecting the frequency difference of the quartz hemispherical harmonic oscillator, and the numerical control system receives detection data transmitted by the in-situ shape detection device and the frequency difference detection device in real time, processes the data, feeds the data back to the ion beam processing device and the microscale mobile platform device, and precisely processes the quartz hemispherical harmonic oscillator.

2. The apparatus for manufacturing atoms by ion beam polishing for in-situ shape detection of a harmonic oscillator of quartz hemisphere according to claim 1, wherein the in-situ shape detection apparatus comprises a rotatable base, a mechanical arm and a laser interferometer, the mechanical arm and the laser interferometer are hinged to the base, the base is disposed on the base of the machine tool, the mechanical arm is composed of a first rod and a second rod which are rotatably connected, the first rod is hinged to the base, and the laser interferometer is mounted on the second rod; the laser interferometer swings within a small range within +/-60 degrees, and the laser interferometer performs 360-degree rotation motion on an XY plane, 360-degree rotation motion on an XZ plane, 360-degree rotation motion on a YZ plane and lifting motion within a range of 100cm through the compound motion of the base and the mechanical arm, so that full-angle coverage type accurate detection is realized by using a laser interference in-situ imaging technology, and detection data are transmitted to a numerical control system in real time.

3. The manufacturing equipment for the ion beam polishing atoms for the in-situ shape detection of the quartz hemispherical harmonic oscillator according to claim 1, is characterized in that the frequency difference detection device comprises a horizontal guide rail I fixed on a machine tool base, a support I connected with the horizontal guide rail I in a sliding mode, a lifting frame I connected with the support I and a laser emitter installed on the lifting frame I, wherein the support I performs translation motion in the X-axis direction on the horizontal guide rail I, the lifting frame I performs movement in the Z-axis direction on the support I, the laser emitter performs movement in the Z-axis direction on the lifting frame I, the two-stage lifting expands the working range in the Z-axis direction, the laser emitter emits laser, the frequency difference of the quartz hemispherical harmonic oscillator is measured through the Doppler effect, and data are transmitted to a numerical control system in real time.

4. The manufacturing equipment for the ion beam polishing atoms for the in-situ shape detection of the quartz hemispherical harmonic oscillator according to claim 1, is characterized in that the ion beam processing device comprises a horizontal guide rail II fixed on a base of a machine tool, a support II connected with the horizontal guide rail II in a sliding manner, a lifting frame II connected with the support II and an ion beam emitter connected with the lifting frame II, wherein the support II performs translation motion in the Y-axis direction on the horizontal guide rail II, the lifting frame II performs movement in the Z-axis direction on the support II, the ion beam emitter is hinged with the lifting frame II to realize small-amplitude rotation between +/-60 degrees, and the ion beam processing device receives a numerical control system instruction to perform atomic-level processing removal on a part of the quartz hemispherical harmonic oscillator which does not meet the requirement;

the ion beam current voltage of the ion beam emitter is 800-1100V, the accelerator voltage is 250-400V, the working distance is 10-40mm, and the radio frequency power is 60-80W; the argon flow is 3-6 sccm.

5. The apparatus as claimed in claim 1, further comprising a vacuum chamber mounted on a base of the machine tool and composed of a barometer for detecting air content and a vacuum pump, wherein the vacuum pump is closed by a distance of 10-50m3The work of the air suction amount per hour, when the air pressure indicating number is zero, the interior of the machine tool reaches a vacuum environment, and the vacuum environment is created for the processing operation of the ion beam processing device.

6. The manufacturing equipment for the ion beam polishing atoms for the in-situ shape detection of the harmonic oscillator with the quartz hemisphere as claimed in claim 1, wherein the micro-scale moving platform device is composed of an X-axis translation stage, a Y-axis translation stage and a Z-axis translation stage, the X-axis translation stage, the Y-axis translation stage and the Z-axis translation stage respectively perform linear motion in directions of X, Y, Z three coordinate axes, and the moving precision is less than 5 nm; the inside main shaft that is equipped with of Z axle translation platform, the main shaft bottom is connected with the rotary disk, and anchor clamps threaded connection realizes through the main shaft that the rotary disk drives anchor clamps and carries out 360 rotations around the Z axle, and the rotation accuracy is less than 0.01.

7. The apparatus for manufacturing atoms through ion beam polishing for in-situ shape detection of quartz hemispherical harmonic oscillator according to claim 1 or 6, wherein the fixture is composed of three hydraulically controlled mechanical claws, and special colloid is attached to the surfaces of the clamping parts of the mechanical claws to prevent the quartz hemispherical harmonic oscillator from being damaged.

8. The apparatus as claimed in claim 1, wherein the conveyor is controlled by a numerical control system to move at a constant speed, i.e. stop and go, and a conveyor belt is provided with a plurality of fixing portions for respectively placing the hemispherical quartz resonator to be finished and the hemispherical quartz resonator after being finished.

9. The apparatus as claimed in claim 2, wherein the laser frequency stabilization precision of the laser interferometer is less than or equal to ± 0.01ppm, the measurement precision is ± 0.5ppm, the angular measurement resolution is 0.01 μm/m, the linear measurement resolution is 1nm, and the data acquisition rate is 50 KHz.

10. A method for processing a quartz hemisphere resonator by using the quartz hemisphere resonator in-situ shape detection ion beam polished atom manufacturing equipment as claimed in any one of claims 1 to 9, comprising the steps of:

after a conveying device conveys a quartz hemispherical harmonic oscillator to be finely machined into a machine tool, a micro-scale moving platform device moves to a clamping station at the conveying device, and the quartz hemispherical harmonic oscillator is clamped through a clamp;

secondly, clamping the quartz hemispherical harmonic oscillator by a clamp, moving the quartz hemispherical harmonic oscillator to the position above a workbench within the detection range of the in-situ shape detection device, starting the in-situ shape detection device to work, detecting the outline size and the shape and position precision of the quartz hemispherical harmonic oscillator, and transmitting the detection data back to the numerical control system in real time; the laser frequency stabilization precision of a laser interferometer in the in-situ shape detection device is less than or equal to +/-0.01 ppm, the measurement precision is +/-0.5 ppm, the angle measurement resolution is 0.01 mu m/m, the linear measurement resolution is 1nm, and the data acquisition rate is 50 KHz;

judging whether the quartz hemispherical harmonic oscillator can be subjected to fine machining by an ion beam machining device by a logic analysis system in the numerical control system so as to meet performance indexes, and if the requirement cannot be met by fine machining, discarding the quartz hemispherical harmonic oscillator; if the requirements can be met through finish machining, the numerical control system operates the ion beam machining device to finish and remove the quartz hemispherical harmonic oscillator in situ, and the ion beam machining device requires a vacuum environment during machining, namely air is pumped out by a vacuum pump before working; the front and rear movable doors are closed, the whole equipment is closed, and the vacuum pump starts to be 10-50m3The work of the inspiratory capacity,/h, when the air pressure indicating number is zero and the interior of the machine tool reaches the vacuum environment, the ion beam processing device starts to work, and the parameters of the ion beam emitter are as follows: the ion beam voltage is 800-1100V, the accelerator voltage is 250-400V, the working distance is 10-40mm, the radio frequency power is 60-80W, and the argon flow is 3-6 sccm;

in the process of finely processing the quartz hemispherical harmonic oscillator by the ion beam processing device, monitoring the frequency difference of the quartz hemispherical harmonic oscillator in real time by a frequency difference detection device, transmitting data to a numerical control system, and determining the performance of the finished quartz hemispherical harmonic oscillator by the numerical control system through analysis and calculation; and placing the waste products and the defective products with frequency difference not up to the standard into a workbench on a base of the machine tool, waiting for recovery, placing the quartz hemispherical harmonic oscillator finished products with size and frequency difference up to the standard into a conveying device by a control clamp of a micro-scale mobile platform device, and carrying out subsequent processes by the conveying device.

Technical Field

The invention relates to the technical field of ultra-precision machining, in particular to manufacturing equipment and a method for detecting ion beam polishing atoms of quartz hemispherical harmonic oscillators in situ shape.

Background

The hemispherical resonator gyro is a novel solid vibrating gyro with high precision, high reliability and long service life, is a non-GPS navigation device, is not influenced by weather and electromagnetic interference, is an inertial navigation device with excellent performance, and has wide application prospect in strategic weapons such as various aerospace and the like. The harmonic oscillator is a core sensitive component of the hemispherical resonator gyro, and the processing precision and the vibration characteristic of the harmonic oscillator directly influence the performance of the hemispherical resonator gyro. The quartz harmonic oscillator has the characteristics of high precision, high reliability and high stability, has the best comprehensive performance in the current gyroscope, is widely applied to the fields of aviation, aerospace, navigation, weaponry, transportation, navigation and the like, the most complex and important part on the hemispherical resonant gyroscope is the hemispherical harmonic oscillator which determines the precision and the performance of the gyroscope, and the precision forming technology of the hemispherical harmonic oscillator is the current research focus.

The raw material of the quartz hemispherical harmonic oscillator is high-purity fused quartz, in recent years, the fused quartz industry in China is continuously developed, and the high-purity and melting equipment technology of quartz glass basically reaches the foreign advanced technical level. Quartz is a rich industrial raw material in China, and breakthrough of the high-purity fused quartz technology provides raw material support for quartz harmonic oscillators. However, the manufacturing of the quartz hemispherical harmonic oscillator belongs to the micro-stress precise and ultra-precise manufacturing of a hard and brittle thin-wall spherical shell-shaped special-shaped three-dimensional structure, and the difficulty is high. As a core part of the hemispherical resonator gyroscope, the quartz hemispherical resonator has the advantages of thin wall, complex shape, high requirement on processing precision and high manufacturing difficulty, and the factors are main bottlenecks for restricting the development of the hemispherical resonator gyroscope.

The present harmonic oscillator spherical surface processing relates to the technological methods and technologies of manual grinding and polishing, spherical surface generation, abrasive flow polishing, magnetorheological polishing and the like. The quartz hemispherical harmonic oscillator part is thin-walled, and the material is hard and brittle, so that the traditional grinding and polishing process method cannot meet the requirement on the machining precision of the hemispherical harmonic oscillator easily; the spherical surface generating method needs one workpiece corresponding to one formed grinding wheel, and has poor processing quality and larger surface roughness; in the abrasive flow polishing process, the removal stress is relatively large, the wall thickness of the harmonic oscillator is small, and the harmonic oscillator is easy to damage in the polishing process, so that the precision, the surface integrity and the consistency of the processed surface are reduced; when the magneto-rheological polishing is carried out, the magnetic field is not uniform, and the forming process is difficult to control accurately. The ion beam polishing is non-contact polishing, has no subsurface damage, no edge effect, no medium-high frequency error and good controllability. The ion beam polishing atom manufacturing equipment for the in-situ shape detection of the quartz hemispherical harmonic oscillator is provided, and has important significance for precisely processing a quartz hemispherical harmonic oscillator blank, breaking through monopoly of foreign technologies, improving the manufacturing technology of hemispherical resonator gyros in China and promoting the national defense safety in China.

Disclosure of Invention

According to the thin-wall and hard and brittle materials of the quartz hemispherical harmonic oscillator part, the traditional grinding and polishing process method cannot meet the requirement on the machining precision of the hemispherical harmonic oscillator easily; the spherical surface generating method needs one workpiece corresponding to one formed grinding wheel, and has poor processing quality and larger surface roughness; in the abrasive flow polishing process, the removal stress is relatively large, the wall thickness of the harmonic oscillator is small, and the harmonic oscillator is easy to damage in the polishing process, so that the precision, the surface integrity and the consistency of the processed surface are reduced; when the magneto-rheological polishing is carried out, the magnetic field is not uniform, and the forming process is difficult to control accurately, so that the equipment and the method for manufacturing the ion beam polished atoms for detecting the in-situ shape of the quartz hemispherical harmonic oscillator are provided. The invention mainly utilizes in-situ laser imaging, in-situ Doppler effect test performance and in-situ shape and position precision measurement to realize a novel method for manufacturing the quartz hemispherical harmonic oscillator atoms by in-situ shape detection and in-situ ion beam polishing, thereby greatly improving the shape and position precision and reducing the rejection rate. The navigation precision and the shape and position precision of the quartz hemispherical harmonic oscillator are positively correlated, and the novel equipment developed by the invention can greatly improve the processing precision and the performance of the quartz hemispherical harmonic oscillator.

The technical means adopted by the invention are as follows:

a quartz hemisphere harmonic oscillator in-situ shape detection ion beam polishing atom manufacturing equipment comprises: the system comprises a numerical control system, a microscale mobile platform device arranged on a machine tool, and an orthomorphism detection device, a frequency difference detection device, an ion beam processing device, a conveying device and a workbench which are arranged on a base of the machine tool, wherein the numerical control system is used for controlling the operation of each device, the conveying device is used for conveying a quartz hemisphere harmonic oscillator to be subjected to finish machining and finished finish machining to enter and exit the machine tool, a clamp used for clamping the quartz hemisphere harmonic oscillator is arranged on the microscale mobile platform device, the movement and rotation of the quartz hemisphere harmonic oscillator carried by the clamp are realized through the microscale mobile platform device, and the clamp is used for clamping the quartz hemisphere harmonic oscillator to be positioned in an area above the workbench during detection and processing; the in-situ shape detection device is used for detecting the shape and position precision and the outline of the quartz hemispherical harmonic oscillator, the frequency difference detection device is used for detecting the frequency difference of the quartz hemispherical harmonic oscillator, and the numerical control system receives detection data transmitted by the in-situ shape detection device and the frequency difference detection device in real time, processes the data, feeds the data back to the ion beam processing device and the microscale mobile platform device, and precisely processes the quartz hemispherical harmonic oscillator.

Furthermore, the in-situ shape detection device comprises a rotatable base, a mechanical arm and a laser interferometer, wherein the mechanical arm and the laser interferometer are hinged with the base; the laser interferometer swings within a small range within +/-60 degrees, and the laser interferometer performs 360-degree rotation motion on an XY plane, 360-degree rotation motion on an XZ plane, 360-degree rotation motion on a YZ plane and lifting motion within a range of 100cm through the compound motion of the base and the mechanical arm, so that full-angle coverage type accurate detection is realized by using a laser interference in-situ imaging technology, and detection data are transmitted to a numerical control system in real time.

Further, frequency difference detection device is including fixing horizontal guide I on the lathe base, support I with I sliding connection of horizontal guide, crane I that links to each other with support I and install the laser emitter on crane I, X axle direction translation motion is carried out to support I on horizontal guide I, the removal of Z axle direction is carried out to crane I on support I, laser emitter carries out the removal of Z axle direction on crane I, the working range of Z direction is enlarged in two-stage lift, laser emitter transmission laser, measure quartzy hemisphere harmonic oscillator frequency difference through the Doppler effect, and carry numerical control system with data in real time.

Furthermore, the ion beam processing device comprises a horizontal guide rail II fixed on a machine tool base, a support II in sliding connection with the horizontal guide rail II, a lifting frame II connected with the support II and an ion beam emitter connected with the lifting frame II, wherein the support II performs translation motion in the Y-axis direction on the horizontal guide rail II, the lifting frame II performs movement in the Z-axis direction on the support II, the ion beam emitter is hinged with the lifting frame II to realize small-amplitude rotation between +/-60 degrees, and the ion beam processing device receives a numerical control system instruction and performs atomic-level processing removal on the part of the quartz hemisphere harmonic oscillator which does not meet the requirement;

the ion beam current voltage of the ion beam emitter is 800-1100V, the accelerator voltage is 250-400V, the working distance is 10-40mm, and the radio frequency power is 60-80W; the argon flow is 3-6 sccm.

Further comprises a vacuum bin which is arranged on a base of the machine tool and consists of an air pressure gauge and a vacuum pump for detecting the air content,closing the front and rear movable doors, and setting the vacuum pump at 10-50m3The work of the air suction amount per hour, when the air pressure indicating number is zero, the interior of the machine tool reaches a vacuum environment, and the vacuum environment is created for the processing operation of the ion beam processing device.

Furthermore, the micro-scale moving platform device consists of an X-axis translation table, a Y-axis translation table and a Z-axis translation table, wherein the X-axis translation table, the Y-axis translation table and the Z-axis translation table respectively make linear motion in the directions of three coordinate axes of X, Y, Z, and the moving precision is less than 5 nm; the inside main shaft that is equipped with of Z axle translation platform, the main shaft bottom is connected with the rotary disk, and anchor clamps threaded connection realizes through the main shaft that the rotary disk drives anchor clamps and carries out 360 rotations around the Z axle, and the rotation accuracy is less than 0.01.

Furthermore, the clamp is composed of three hydraulically controlled mechanical claws, and special colloid is attached to the surfaces of the clamping parts of the mechanical claws, so that the quartz hemispherical harmonic oscillators are prevented from being damaged.

Furthermore, the conveying device is controlled by a numerical control system to move at a constant speed, namely stop and move, a conveying belt is adopted, and a plurality of fixing parts for placing quartz hemisphere harmonic oscillators to be subjected to finish machining and finished quartz hemisphere harmonic oscillators are arranged on the conveying belt.

Furthermore, the laser frequency stabilization precision of the laser interferometer is less than or equal to +/-0.01 ppm, the measurement precision is +/-0.5 ppm, the angular measurement resolution is 0.01 mu m/m, the linear measurement resolution is 1nm, and the data acquisition rate is 50 KHz.

The invention also provides a method for processing the quartz hemispherical harmonic oscillator by using the manufacturing equipment for detecting ion beam polished atoms in the original shape of the quartz hemispherical harmonic oscillator, which comprises the following steps:

after a conveying device conveys a quartz hemispherical harmonic oscillator to be finely machined into a machine tool, a micro-scale moving platform device moves to a clamping station at the conveying device, and the quartz hemispherical harmonic oscillator is clamped through a clamp;

secondly, clamping the quartz hemispherical harmonic oscillator by a clamp, moving the quartz hemispherical harmonic oscillator to the position above a workbench within the detection range of the in-situ shape detection device, starting the in-situ shape detection device to work, detecting the outline size and the shape and position precision of the quartz hemispherical harmonic oscillator, and transmitting the detection data back to the numerical control system in real time; the laser frequency stabilization precision of a laser interferometer in the in-situ shape detection device is less than or equal to +/-0.01 ppm, the measurement precision is +/-0.5 ppm, the angle measurement resolution is 0.01 mu m/m, the linear measurement resolution is 1nm, and the data acquisition rate is 50 KHz;

judging whether the quartz hemispherical harmonic oscillator can be subjected to fine machining by an ion beam machining device by a logic analysis system in the numerical control system so as to meet performance indexes, and if the requirement cannot be met by fine machining, discarding the quartz hemispherical harmonic oscillator; if the requirements can be met through finish machining, the numerical control system operates the ion beam machining device to finish and remove the quartz hemispherical harmonic oscillator in situ, and the ion beam machining device requires a vacuum environment during machining, namely air is pumped out by a vacuum pump before working; the front and rear movable doors are closed, the whole equipment is closed, and the vacuum pump starts to be 10-50m3The work of the inspiratory capacity,/h, when the air pressure indicating number is zero and the interior of the machine tool reaches the vacuum environment, the ion beam processing device starts to work, and the parameters of the ion beam emitter are as follows: the ion beam voltage is 800-1100V, the accelerator voltage is 250-400V, the working distance is 10-40mm, the radio frequency power is 60-80W, and the argon flow is 3-6 sccm;

in the process of finely processing the quartz hemispherical harmonic oscillator by the ion beam processing device, monitoring the frequency difference of the quartz hemispherical harmonic oscillator in real time by a frequency difference detection device, transmitting data to a numerical control system, and determining the performance of the finished quartz hemispherical harmonic oscillator by the numerical control system through analysis and calculation; and placing the waste products and the defective products with frequency difference not up to the standard into a workbench on a base of the machine tool, waiting for recovery, placing the quartz hemispherical harmonic oscillator finished products with size and frequency difference up to the standard into a conveying device by a control clamp of a micro-scale mobile platform device, and carrying out subsequent processes by the conveying device.

Compared with the prior art, the invention has the following advantages:

1. according to the manufacturing equipment and the method for the ion beam polishing atoms for the in-situ shape detection of the quartz hemispherical harmonic oscillator, parameters such as the shape profile, the size, the position error coaxiality and the shape error roundness of the hemispherical harmonic oscillator are determined in real time through an in-situ shape detection device under the condition of one-time clamping; the frequency difference of the quartz hemisphere harmonic oscillator is detected in situ by the frequency difference detection device, and the frequency difference is not required to be specially detected after finish machining, so that one process is saved.

2. The ion beam processing device processes under the precise control of a computer and the in-situ shape detection device, and refines the quartz hemispherical harmonic oscillator, so that the processing precision can reach above the atomic level, the processing environment is stable, the ion beam generated by the ion source has small fluctuation, and the surface of a workpiece cannot be abraded.

3. According to the equipment and the method for manufacturing the polished atoms of the quartz hemispherical harmonic oscillator in the ion beam in-situ shape detection, a numerical control system can receive data transmitted by an in-situ shape detection device and a frequency difference detection device in real time, process the data and feed the data back to an ion beam processing device and a micro-scale mobile platform device, so that the precision is high; the whole novel device can obviously reduce the rejection rate and precisely process the quartz hemispherical harmonic oscillator with high quality and high efficiency.

In conclusion, the technical scheme of the invention can solve the problems that the quartz hemispherical harmonic oscillator part in the prior art is thin-walled and hard and brittle in material, and the traditional grinding and polishing process method is difficult to meet the requirement of machining precision of the hemispherical harmonic oscillator; the spherical surface generating method needs one workpiece corresponding to one formed grinding wheel, and has poor processing quality and larger surface roughness; in the abrasive flow polishing process, the removal stress is relatively large, the wall thickness of the harmonic oscillator is small, and the harmonic oscillator is easy to damage in the polishing process, so that the precision, the surface integrity and the consistency of the processed surface are reduced; when the magneto-rheological polishing is carried out, the magnetic field is not uniform, and the forming process is difficult to control accurately.

Based on the reasons, the invention can be widely popularized in the fields of in-situ imaging, precise detection, ultra-precise machining and the like.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.

FIG. 1 is a schematic diagram of an ion beam polishing atom manufacturing apparatus for in-situ shape detection of a quartz hemispherical resonator according to the present invention.

Fig. 2 is an external view of the apparatus of the present invention.

In the figure: 1. a numerical control system; 2-1, a base; 2-2, a mechanical arm; 2-3, a laser interferometer; 3-1, a horizontal guide rail I; 3-2, a support I; 3-3, a lifting frame I; 3-4, a laser emitter; 4-1, horizontal guide rail II; 4-2, a support II; 4-3, a lifting frame II; 4-4, an ion beam emitter; 5. a clamp; 6. a work table; 7-1, an X-axis translation stage; 7-2, a Y-axis translation stage; 7-3, a Z-axis translation stage; 7-4, rotating the disc; 8. a machine tool base; 9. a conveying device; 10. a vacuum bin; 11. a movable door; 12. a main shaft.

Detailed Description

It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict. The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the invention. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.

Example 1

After the traditional quartz hemisphere harmonic oscillator is ground and polished, the form and position precision and the performance are directly detected, unqualified harmonic oscillators are directly scrapped, and the rejection rate is high. The coaxiality of the existing quartz hemispherical harmonic oscillator is difficult to reduce to 300nm by ultra-precise grinding and polishing, and the general coaxiality is more than 1.5 mu m. In order to solve the problems in the prior art, as shown in fig. 1-2, the present invention provides a manufacturing apparatus for detecting ion beam polishing atoms in situ of a hemispherical quartz resonator, comprising: the system comprises a numerical control system 1, a micro-scale mobile platform device arranged on a machine tool, an in-situ shape detection device, a frequency difference detection device, an ion beam processing device, a conveying device 9, a clamp 5, a workbench 6 and a vacuum bin 10 which are arranged on a machine tool base 8. The clamp 5 is used for clamping the quartz hemisphere harmonic oscillator. The numerical control system 1 receives the shape and position precision and the outline of the quartz hemisphere harmonic oscillator measured by the original shape detection device and the frequency difference of the quartz hemisphere harmonic oscillator measured by the frequency difference detection device, carries out accurate calculation, generates an instruction again and transmits the instruction back to the microscale mobile platform device, drives the clamp 5 to move, controls the ion beam processing device at the same time, and selects a proper position for processing. The numerical control system 1 controls each device to adjust the position in real time in the machining process so as to realize final precision machining. The numerical control system 1 can receive data transmitted by the in-situ shape detection device and the frequency difference detection device in real time, process the data, feed the data back to the ion beam processing device and the micro-scale mobile platform device, and precisely process the quartz hemispherical harmonic oscillator.

The microscale mobile platform device is composed of an X-axis translation table 7-1, a Y-axis translation table 7-2 and a Z-axis translation table 7-3, wherein the Z-axis translation table 7-3 internally comprises a main shaft 12, the bottom of the main shaft 12 is connected with a rotating disc, a clamp is installed on the rotating disc 7-4, and a clamp 5 is connected with the rotating disc 7-4 through threads and can be detached. The main shaft 12 can drive the rotating disk 7-4 at the bottom of the Z-axis translation table 7-3 to rotate 360 degrees around the Z axis, so that the clamp is driven to rotate 360 degrees around the Z axis, and the rotation precision is less than 0.01 degrees. The X-axis translation stage 7-1, the Y-axis translation stage 7-2 and the Z-axis translation stage 7-3 respectively make linear motion in X, Y, Z coordinate axis directions, so that the clamp carrying the quartz hemispherical harmonic oscillator can make linear motion in X, Y, Z coordinate axis directions, and the movement precision is less than 5 nm.

The clamp 5 is composed of three hydraulically controlled mechanical claws, special colloid is attached to the surface of a clamping part, and the quartz hemispherical harmonic oscillator can be clamped to the greatest extent without damage and damage through transformation.

The in-situ shape detection device comprises a rotatable base 2-1, a mechanical arm 2-2 and a laser interferometer 2-3, wherein the base 2-1 is hinged with the mechanical arm 2-2, and the mechanical arm 2-2 is composed of two rod pieces capable of freely rotating, so that the working range of the laser interferometer 2-3 is enlarged. The multi-beam laser interferometer 2-3 can realize 360-degree rotation motion of an XY plane, 360-degree rotation motion of an XZ plane, 360-degree rotation motion of a YZ plane and lifting motion within a 100cm range through the combined motion of the rotating base and the mechanical arm, can realize full-angle coverage, accurately measure the form and position precision of the quartz hemispherical harmonic oscillator, and can convey the quartz hemispherical harmonic oscillator to a numerical control system in real time. Specifically, the laser interferometer 2-3 can realize 360-degree rotation of an XY plane along with the base 2-1, 180-degree rotation of an XZ plane along with the mechanical arm 2-2, and small-range swinging of the laser interferometer 2-3 within +/-60 degrees. The shape and position precision and the outline of the quartz hemispherical harmonic oscillator, the coaxiality of the spherical convex central rod and the spherical concave central rod and the like are detected by the quartz hemispherical harmonic oscillator clamped by the in-situ shape detection device full-coverage detection clamp 5 through a laser interference in-situ imaging technology, and are transmitted to the numerical control system 1 in real time. The laser interferometer realizes measurement by utilizing light interference, has the characteristics of non-contact and nondestructive detection, and can accurately measure geometric errors of a workpiece such as line shape, angle, verticality, straightness accuracy, flatness and the like. The laser frequency stabilization precision (starting shooting in one hour) of the laser interferometers 2-3 is as follows: less than or equal to +/-0.01 ppm, measurement precision of +/-0.5 ppm and angle measurement resolution ratio of: 0.01 μm/m, linear measurement resolution of 1nm, and data acquisition rate of 50 KHz.

The frequency difference detection device comprises a horizontal guide rail I3-1, a support I3-2, a lifting frame I3-3 and a laser transmitter 3-4. The frequency difference detection device can perform X-axis direction translation motion on a horizontal guide rail I3-1 through a support I3-2 integrally, a lifting frame I3-3 can perform Z-axis direction movement on the support I3-2, a laser transmitter 3-4 can perform Z-axis direction movement on the lifting frame I3-3, and the working range of the Z direction is expanded through two-stage lifting. The laser emitter 3-4 emits laser, the frequency difference detection device measures the harmonic oscillator frequency difference of the quartz hemisphere through the Doppler effect, and data are transmitted to the numerical control system 1 in real time.

The ion beam processing device comprises a horizontal guide rail II 4-1, a support II 4-2, a lifting frame II 4-3 and an ion beam emitter 4-4, wherein the horizontal guide rail II 4-1 is fixed on a machine tool base 8. The ion beam processing device can integrally perform Y-axis direction translation motion along the horizontal guide rail II 4-1 through the support II 4-2, the lifting frame II 4-3 drives the ion beam emitter 4-4 to perform Z-axis direction movement on the support II 4-2, and the ion beam emitter 4-4 is hinged with the lifting frame II 4-3, so that small-amplitude rotation between-60 degrees and +60 degrees can be realized. And the ion beam processing device receives the instruction of the numerical control system 1 and carries out atomic-level processing and removal on the part of the quartz hemispherical harmonic oscillator which does not meet the requirement. The ion beam current voltage of the ion beam emitter 4-4 is 800-1100V, the accelerator voltage is 250-400V, the working distance is 10-40mm, and the radio frequency power is 60-80W; the argon flow is 3-6 sccm.

The conveying device 9 is used for conveying the quartz hemispherical harmonic oscillator blank which is subjected to rough machining and waits for finish machining into a machine tool, and conveying the finished quartz hemispherical harmonic oscillator product which is subjected to finish machining and meets the quality requirement out of the machine tool for subsequent processes. The conveying device 9 is arranged on the machine tool base 8 and can move at a constant speed and be controlled to stop and move. The conveying device 9 adopts a conveying belt, and a plurality of fixing parts for placing the quartz hemispherical harmonic oscillators to be subjected to finish machining and finish machining are arranged on the conveying belt.

The vacuum chamber 10 comprises a barometer and a vacuum pump, the barometer detects the air content, and the vacuum pump is 10-50m3The work of the air suction amount per hour creates a vacuum environment for the ion beam processing device. After the quartz hemispherical harmonic oscillator is conveyed into the machine tool by the conveying device 9, the front movable door 11 and the rear movable door 11 of the vacuum bin 10 are closed, and the vacuum pump of the vacuum bin 10 starts to be 10-50m3Work with a suction of/h inThe air pressure indicating number is zero, and when the interior of the machine tool reaches a vacuum environment, the ion beam machining device starts to work.

Example 2

On the basis of embodiment 1, the invention also provides a method for processing a quartz hemispherical resonator by using the manufacturing equipment for detecting ion beam polished atoms in the orthomorphism of the quartz hemispherical resonator, which comprises the following steps:

after a conveying device 9 conveys a quartz hemispherical harmonic oscillator to be finely machined into a machine tool, a micro-scale moving platform device moves to a clamping station at the conveying device 9, and the quartz hemispherical harmonic oscillator is clamped by a clamp 5;

secondly, clamping the quartz hemispherical harmonic oscillator by a clamp 5, moving the quartz hemispherical harmonic oscillator to the position above a workbench 6 within the detection range of an original shape detection device, starting the original shape detection device to detect the contour size of the quartz hemispherical harmonic oscillator, and shape and position accuracies such as roundness, coaxiality of a spherical convex central rod and a spherical concave central rod, and transmitting the shape and position accuracies back to the numerical control system 1 in real time; the laser frequency stabilization precision of the laser interferometer 2-3 in the in-situ shape detection device is (starting up for one hour to start shooting): less than or equal to +/-0.01 ppm, measurement precision +/-0.5 ppm, angle measurement resolution: 0.01 mu m/m, linear measurement resolution of 1nm and data acquisition rate of 50 KHz;

thirdly, judging whether the quartz hemispherical harmonic oscillator can be subjected to fine machining by an ion beam machining device through a logic analysis system in the numerical control system 1 so as to meet performance indexes, and if the requirement cannot be met through the fine machining, discarding the quartz hemispherical harmonic oscillator; if the requirements can be met through finish machining, the numerical control system 1 operates the ion beam machining device to finish and remove the quartz hemispherical harmonic oscillator in situ, the ion beam machining device requires a vacuum environment during machining, and air needs to be pumped out by a vacuum pump before working; the front and rear movable doors 11 are closed, the whole equipment is closed, and the vacuum pump starts to be 10-50m3The work of the inspiratory capacity,/h, when the air pressure indicating number is zero and the interior of the machine tool reaches the vacuum environment, the ion beam processing device starts to work, and the parameters of the ion beam emitter are as follows: the ion beam voltage is 800-1100V, the accelerator voltage is 250-400V, the working distance is 10-40mm, the radio frequency power is 60-80W, and the argon flow is 3-6 sccm;

in the process of finely processing the quartz hemispherical harmonic oscillator by the ion beam processing device, monitoring the frequency difference of the quartz hemispherical harmonic oscillator in real time by a frequency difference detection device, transmitting data to a numerical control system 1, and determining the performance of the finished quartz hemispherical harmonic oscillator by the numerical control system 1 through analysis and calculation; placing the waste products and the defective products with frequency difference not up to the standard into a workbench 6 on a machine tool base 8, waiting for recovery, placing the quartz hemispherical harmonic oscillator finished products with size and frequency difference up to the standard into a conveyer 9 by a control clamp 5 of a micro-scale mobile platform device, and carrying out subsequent processes by the conveyer 9.

Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

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