阅读说明：本技术 一种用于第三代半导体的精密加工装置 (Precision machining device for third-generation semiconductor ) 是由 屈辉 于 2021-06-23 设计创作，主要内容包括：本发明公开了一种用于第三代半导体的精密加工装置,包括加工工作台和用于对SiC晶片进行加工的钻孔机构,其所述工作台上方且位于钻孔机构下方设有用于对SiC晶片在加工时进行支撑的支撑板,所述支撑板上设有两个夹持板,此用于第三代半导体的精密加工装置,通过在工作台上方的支撑板上设有的两个夹持板,两个夹持板在调节件的调节件,可以实现对不同尺寸型号大小的SiC晶片在加工时进行可调式固定的作用,同时在调节件支撑板上对应设有的去除机构,该去除机构不仅能够实现对SiC晶片在打孔加工后,实现对其孔径中残留的杂质进行快速振动去除的作用,进一步的提高SiC晶片打孔加工的精度。(The invention discloses a precision machining device for a third-generation semiconductor, which comprises a machining workbench and a drilling mechanism for machining a SiC wafer, a support plate for supporting the SiC wafer during processing is arranged above the workbench and below the drilling mechanism, two clamping plates are arranged on the supporting plate, the clamping plates are used for a third-generation precision processing device for semiconductors, through the two clamping plates arranged on the supporting plate above the workbench and on the adjusting part of the adjusting part, can realize the adjustable fixing function to SiC wafers with different sizes and models during processing, and meanwhile, a removing mechanism is correspondingly arranged on the adjusting piece supporting plate, the removing mechanism not only can realize the effect of rapidly vibrating and removing residual impurities in the aperture of the SiC wafer after the SiC wafer is punched, but also further improves the punching precision of the SiC wafer.)

1. A precision machining apparatus for a third generation semiconductor, comprising a machining table (1) and a drilling mechanism (2) for machining a SiC wafer, characterized in that: a supporting plate (3) used for supporting the SiC wafer during processing is arranged above the workbench (1) and below the drilling mechanism (2), two clamping plates (31) are arranged on the supporting plate (3), and an adjusting piece (4) used for adjusting the clamping distance between the two clamping plates (31) is arranged on the supporting plate (3);

and the bottom end of the supporting plate (3) is provided with a removing mechanism (5), and the removing mechanism (5) is used for removing impurities in the aperture of the SiC wafer after drilling.

2. A precision processing apparatus for a third generation semiconductor according to claim 1, characterized in that: a through hole (33) is formed in the center of the support plate (3), and the removing mechanism (5) enables the through hole (33) to be kept in a filling state during SiC wafer processing.

3. A precision processing apparatus for a third generation semiconductor according to claim 1, characterized in that: the removing mechanism (5) comprises a circular plate (51) arranged at the through hole (33), a supporting mechanism (6) for telescopically supporting the circular plate (51) relative to the through hole (33) is arranged at the bottom end of the circular plate (51), and a fixed shell (52) installed at the bottom end of the supporting plate (3) is arranged at the bottom end of the supporting mechanism (6);

the adjusting piece (4) is positioned in the fixed shell (52), and the connecting end of the adjusting piece is connected with the two clamping plates (31);

one side of the fixed shell (52) is provided with a dust removal mechanism (7) for adsorbing impurities on the fixed shell;

and the bottom end of the fixed shell (52) is positioned on the workbench (1) and is provided with a vibration impurity removal mechanism (10) for removing impurities contained in the SiC wafer holes of the drilled holes.

4. A precision processing apparatus for a third generation semiconductor according to claim 3, characterized in that: the supporting mechanism (6) comprises an electric push rod (61) arranged inside the fixed shell (52), and the supporting plate (3) is positioned at the through hole (33) or separated from the through hole (33) through the expansion and contraction of the electric push rod (61).

5. A precision processing apparatus for a third generation semiconductor according to claim 1, characterized in that: two sliding grooves are formed in the supporting plate (3), and the adjusting piece (4) penetrates through the two sliding grooves to be connected with the supporting plate (3).

6. A precision processing apparatus for an SiC wafer according to claim 1, characterized in that: the adjusting piece (4) comprises four connecting rods (41) which are respectively arranged at the bottom ends of the two clamping plates (31), the bottom ends of the four connecting rods (41) all penetrate through the sliding grooves, the two connecting rods (41) form a group, a clamping piece (8) is arranged between the two connecting rods (41), and the two connecting rods (41) are clamped with connecting shells (42) through the clamping piece (8);

threaded sleeves (43) are installed on the outer sides of the connecting shells (42), four opposite moving pieces (9) are arranged between the threaded sleeves (43), and the four opposite moving pieces (9) respectively drive four groups of connecting rods (41) to move in opposite directions in pairs so that the distance between the two clamping plates (31) can be adjusted.

7. A precision processing apparatus for a third generation semiconductor according to claim 6, characterized in that: the clamping plate is characterized in that two guide grooves are formed in the bottom end of the clamping plate (31), guide strips (32) are arranged in the two guide grooves, and moving grooves which are connected with the guide strips (32) in a sliding mode are formed in the top end of the connecting rod (41).

8. A precision processing apparatus for a third generation semiconductor according to claim 6, characterized in that: joint spare (8) include both ends a plurality of buffer spring (81) of being connected with two connecting rods (41) respectively, and one side that two connecting rods (41) kept away from each other all installs joint piece (82), the position that corresponds two joint pieces (82) on connecting shell (42) is equipped with the joint mouth respectively.

9. A precision processing apparatus for a third generation semiconductor according to claim 6, characterized in that: move piece (9) in opposite directions including rotate connect two-way threaded rod (91) respectively inside set casing (52), four two liang of screw thread bush (43) respectively connect in two-way threaded rod (91) outsides, two drive gear (92), two are all installed to the one end of two-way threaded rod (91) the transmission is connected with gear chain (93) between drive gear (92), and one of them drive gear (92) the outside is installed and is carried out driven driving motor (94) to it.

10. A precision processing apparatus for a third generation semiconductor according to claim 3, characterized in that: the vibration impurity removing mechanism (10) comprises buffer mechanisms (11) arranged at four corners of the bottom of the fixed shell (52), the four buffer mechanisms (11) are all arranged on the workbench (1), a rotating rod (101) is arranged on the workbench (1), a gear transmission mechanism (12) is arranged at the center of the rotating rod (101), and two ends of the rotating rod (101) are respectively and fixedly provided with an eccentric wheel (102), the eccentric wheels (102) are connected with a roller (103) in a sliding way, and the roller (103) moves relative to the eccentric wheel (102), a fixed rod (104) is arranged on the roller (103), the fixed rod (104) enables the roller (103) to be connected with the fixed shell (52) and can move up and down along with the roller (103), and four buffer mechanisms (11) are used for supporting, so that the SiC wafer on the supporting plate (3) vibrates to a certain degree, and impurities at the drilling position of the SiC wafer fall off.

11. A precision processing apparatus for a third generation semiconductor according to claim 1, characterized in that: two clamping plate (31) are close to each other one side center department is equipped with mounting groove (311), and mounting groove (311) inside is equipped with pressure sensor (312), the pressure sensor (312) outside just is located clamping plate (31) inboard and installs anti-skidding contact pad (313).

Technical Field

The invention relates to the technical field of semiconductor processing, in particular to a precision processing device for a third-generation semiconductor.

Background

Third generation semiconductor materials mainly include SiC, GaN, diamond, and the like, and are also called wide bandgap semiconductor materials because their bandgap (Eg) is greater than or equal to 2.3 electron volts (eV). Compared with the first generation and the second generation semiconductor materials, the third generation semiconductor material has the advantages of high thermal conductivity, high breakdown field strength, high saturated electron drift rate, high bonding energy and the like, can meet the new requirements of modern electronic technology on severe conditions such as high temperature, high power, high voltage, high frequency, radiation resistance and the like, is the most promising material in the field of semiconductor materials, has important application prospects in the fields of national defense, aviation, aerospace, oil exploration, optical storage and the like, can reduce more than 50% of energy loss in various strategic industries such as broadband communication, solar energy, automobile manufacturing, semiconductor illumination, smart grid and the like, can reduce the equipment volume by more than 75% to the maximum, and has milestone significance for the development of human science and technology.

At present, in the industrial production of the third generation semiconductor SiC wafer, the SiC wafer needs to be punched, and the existing SiC wafer is processed, on one hand, the whole volume of the material is small and the thickness is thin, so that the SiC wafer of each type needs a corresponding mold to position and fix the SiC wafer, the mode not only increases the processing cost, but also is not convenient for placing the SiC wafer before processing and taking the SiC wafer after processing, on the other hand, in the process of punching the SiC wafer, because the aperture is small, more impurities can remain in the hole, thereby influencing the precision of punching and processing of the SiC wafer, and therefore, the precision processing device for the third generation semiconductor is provided.

Disclosure of Invention

The present invention is directed to a precision machining apparatus for a third generation semiconductor, which solves the above problems of the related art.

In order to achieve the purpose, the invention provides the following technical scheme: a precision machining device for a third-generation semiconductor comprises a machining workbench and a drilling mechanism for machining a SiC wafer, wherein a supporting plate for supporting the SiC wafer during machining is arranged above the workbench and below the drilling mechanism, two clamping plates are arranged on the supporting plate, and an adjusting piece for adjusting the clamping distance between the two clamping plates is arranged on the supporting plate;

and the bottom end of the supporting plate is provided with a removing mechanism, and the removing mechanism is used for removing impurities in the aperture of the SiC wafer after drilling.

Preferably, a through hole is formed in the center of the support plate, and the removing mechanism enables the through hole to be kept in a filling state during SiC wafer processing.

Preferably, the removing mechanism comprises a circular plate arranged at the through hole, a supporting mechanism for telescopically supporting the circular plate relative to the through hole is arranged at the bottom end of the circular plate, and a fixed shell arranged at the bottom end of the supporting plate is arranged at the bottom end of the supporting mechanism;

the adjusting piece is positioned in the fixed shell, and the connecting end is connected with the two clamping plates;

one side of the fixed shell is provided with a dust removal mechanism for adsorbing impurities on the fixed shell;

and the bottom end of the fixed shell is positioned on the workbench and is provided with a vibration impurity removal mechanism for removing impurities contained in SiC wafer holes of drilled holes.

Preferably, the supporting mechanism comprises an electric push rod arranged inside the fixed shell, and the supporting plate is positioned at the through hole or separated from the through hole through the stretching of the electric push rod.

Preferably, the supporting plate is provided with two sliding grooves, and the adjusting piece penetrates through the two sliding grooves to be connected with the supporting plate.

Preferably, the adjusting part comprises four connecting rods respectively arranged at the bottom ends of the two clamping plates, the bottom ends of the four connecting rods all penetrate through the sliding groove, the two connecting rods form a group, a clamping part is arranged between the two connecting rods, and the two connecting rods are clamped with the connecting shell through the clamping part;

the connecting shell is characterized in that threaded sleeves are installed on the outer side of the connecting shell, four threaded sleeves are provided with opposite moving members, and the four groups of connecting rods are driven by the four opposite moving members to move in opposite directions, so that the distance between the two clamping plates is adjusted.

Preferably, the clamping plate bottom is equipped with two guide ways, and the inside guide strip that all installs of two guide ways, the connecting rod top is equipped with the shifting chute with the mutual sliding connection of guide strip.

Preferably, the joint spare includes a plurality of buffer spring that both ends are connected with two connecting rods respectively, and the joint piece is all installed to one side that two connecting rods kept away from each other, the position that corresponds two joint pieces on the connecting shell is equipped with the joint mouth respectively.

Preferably, the moving member in opposite directions is including rotating two-way threaded rod respectively of connection inside the set casing, four the thread bush is two double-thread respectively cup joints in two-way threaded rod outsides, two drive gear is all installed to two-way threaded rod's one end, two the transmission is connected with the gear chain between the drive gear, and one of them drive gear's the outside is installed and is carried out driven driving motor to it.

Preferably, the vibration removes miscellaneous mechanism including installing the buffer gear in set casing bottom four corners, four buffer gear all installs on the workstation, be equipped with the dwang on the workstation, dwang center department is equipped with gear drive mechanism, and the both ends of dwang fixed mounting respectively have the eccentric wheel, sliding connection has the gyro wheel on the eccentric wheel, and the relative eccentric wheel of gyro wheel removes, install the dead lever on the gyro wheel, the dead lever makes and is connected between gyro wheel and the set casing, and along with reciprocating of gyro wheel to and four buffer gear support, make the vibration of the certain degree of SiC wafer in the backup pad, make the impurity of its drilling department drop.

Preferably, two the mutual one side center department that is close to of grip block is equipped with the mounting groove, and the inside pressure sensor that is equipped with of mounting groove, the pressure sensor outside just is located the grip block inboard and installs anti-skidding contact pad.

Compared with the prior art, the invention has the beneficial effects that:

1. when the SiC wafer punching machine is used, the two clamping plates are arranged on the supporting plate above the workbench, the two clamping plates are used for adjusting the adjusting piece of the adjusting piece, the SiC wafers with different sizes and models can be adjustably fixed during machining, and meanwhile, the removing mechanism is correspondingly arranged on the supporting plate of the adjusting piece, can realize the function of quickly vibrating and removing impurities remained in the aperture of the SiC wafer after the SiC wafer is punched, and further improves the punching machining precision of the SiC wafer.

2. The round hole is formed in the supporting plate, and the round plate is arranged at the round hole and can move up and down relative to the round hole along with the electric push rod, so that the SiC wafer is placed before processing and taken out after processing.

Drawings

FIG. 1 is a schematic view of the overall structure of the present invention;

FIG. 2 is a schematic view of a fixing case according to the present invention;

FIG. 3 is a side view of the fixing housing of the present invention;

FIG. 4 is a schematic view of the internal structure of the fixing case according to the present invention;

FIG. 5 is a schematic structural view of a support mechanism according to the present invention;

FIG. 6 is a schematic view of the structure of the bi-directional threaded rod of the present invention;

FIG. 7 is a schematic diagram of a clamping plate structure according to the present invention;

FIG. 8 is a side view of the clamping plate of the present invention;

FIG. 9 is a schematic view of a pressure sensor according to the present invention;

FIG. 10 is a schematic diagram of an electrical connection structure of the pressure sensor according to the present invention.

In the figure: 1-a workbench; 2-a support plate; 3-a support plate; 31-a clamping plate; 311-mounting grooves; 312-a pressure sensor; 313-anti-skid contact pads; 32-a guide bar; 33-a via hole; 4, adjusting parts; 41-a connecting rod; 42-a connecting shell; 43-a threaded sleeve; 5-a removal mechanism; 51-circular plate; 52-a stationary shell; 6-a support mechanism; 61-electric push rod; 7-a dust removal mechanism; 8-a clamping piece; 81-a buffer spring; 82-a clamping block; 9-opposite moving parts; 91-bidirectional threaded rod; 92-a drive gear; 93-gear train; 94-a drive motor; 10-a vibration impurity removal mechanism; 101-rotating rod; 102-eccentric wheel; 103-a roller; 104-a fixing bar; 11-a buffer mechanism; 12-gear drive.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

Referring to fig. 1-10, the present invention provides a technical solution: a precision machining device for a third-generation semiconductor comprises a machining workbench 1 and a drilling mechanism 2 for machining a SiC wafer, wherein the drilling mechanism 2 is used for drilling the SiC wafer and is well known by people in the prior art, and therefore excessive description is not needed, a support plate 3 for supporting the SiC wafer during machining is arranged above the workbench 1 and below the drilling mechanism 2, two clamping plates 31 are arranged on the support plate 3, a mounting groove 311 is arranged at the center of one side, close to each other, of the two clamping plates 31, a pressure sensor 312 is arranged inside the mounting groove 311, an anti-skid contact pad 313 is arranged outside the pressure sensor 312 and inside the clamping plate 31, the two clamping plates 31 are clamped and fixed outside the SiC wafer through the anti-skid contact pad 313 when clamping and fixing the SiC wafer, and meanwhile, the pressure value between the pressure sensor 312 and the SiC wafer is detected, when the pressure value is detected to reach the set value, the adjusting piece 4 stops running, so that the SiC wafer is protected when being clamped and fixed;

the clamping device is characterized in that an adjusting piece 4 used for adjusting the clamping distance between the two clamping plates 31 is arranged on the supporting plate 3, two sliding grooves are formed in the supporting plate 3, the adjusting piece 4 penetrates through the two sliding grooves to be connected with the supporting plate 3, the two sliding grooves are in a long and thin strip shape, the adjusting piece 4 comprises four connecting rods 41 respectively arranged at the bottom ends of the two clamping plates 31, the bottom ends of the four connecting rods 41 penetrate through the sliding grooves, the two connecting rods 41 form a group, a clamping piece 8 is arranged between the two connecting rods 41, and a connecting shell 42 is clamped between the two connecting rods 41 through the clamping piece 8;

the outer side of the connecting shell 42 is provided with a threaded sleeve 43, opposite moving members 9 are arranged among the four threaded sleeves 43, and the four opposite moving members 9 respectively drive the four groups of connecting rods 41 to move in opposite directions in pairs so as to adjust the distance between the two clamping plates 31;

the opposite moving member 9 comprises two bidirectional threaded rods 91 rotatably connected inside the fixed shell 52, each two of the four threaded sleeves 43 are connected to the outer sides of the two bidirectional threaded rods 91, one end of each of the two bidirectional threaded rods 91 is provided with a driving gear 92, a gear chain 93 is connected between the two driving gears 92 in a transmission manner, and the outer side of one of the driving gears 92 is provided with a driving motor 94 for driving the driving gear 92;

when the SiC wafer is clamped and fixed, the driving motor 94 operates to enable the two driving gears 92 to synchronously rotate under the connection of the gear chain 93, and enable the two bidirectional threaded rods 91 to rotate, and when the bidirectional threaded rods 91 rotate, the four threaded sleeves 43 receive driving forces in opposite directions between every two, the four groups of connecting rods 41 further drive the two clamping plates 31 to move oppositely until the SiC wafer is clamped and fixed, and the driving motor 94 stops operating until the pressure sensor 312 on the clamping plates 31 detects that the pressure reaches a set value, so that the SiC wafer is further clamped stably and accurately.

The bottom of grip block 31 is equipped with two guide ways, and two inside guide strips 32 of all installing of guide way, connecting rod 41 top is equipped with the shifting chute with the mutual sliding connection of guide strip 32.

The clamping piece 8 comprises a plurality of buffer springs 81, two ends of each buffer spring are respectively connected with the two connecting rods 41, clamping blocks 82 are respectively installed on the sides, away from each other, of the two connecting rods 41, and clamping ports are respectively formed in the positions, corresponding to the two clamping blocks 82, of the connecting shell 42;

when needs are dismantled the grip block 31 promptly, then through two joint pieces 82 of extrusion, at this moment, buffer spring 81 receives the extrusion force and deforms, makes four groups of connecting rods 41 respectively along two liang of mutual removals of guide way department that correspond, breaks away from the card kneck up to joint piece 82, at this moment, can realize dismantling the effect of changing fast between joint board and the connecting shell 42.

The bottom end of the support plate 3 is provided with a removing mechanism 5, the removing mechanism 5 is used for removing impurities in the aperture of the SiC wafer after drilling, the center of the support plate 3 is provided with a through hole 33, and the removing mechanism 5 keeps the through hole 33 in a filling state during the SiC wafer processing;

the removing mechanism 5 comprises a circular plate 51 arranged at the through hole 33, the bottom end of the circular plate 51 is provided with a supporting mechanism 6 for telescopically supporting the position of the circular plate relative to the through hole 33, the bottom end of the supporting mechanism 6 is provided with a fixed shell 52 arranged at the bottom end of the supporting plate 3, the supporting mechanism 6 comprises an electric push rod 61 arranged in the fixed shell 52, and the supporting plate 3 is positioned at the through hole 33 or separated from the through hole 33 by the telescopic action of the electric push rod 61;

the adjusting piece 4 is positioned inside the fixed shell 52, and the connecting end is connected with the two clamping plates 31;

a dust removal mechanism 7 for adsorbing impurities on the fixed shell 52 is arranged on one side of the fixed shell 52, the dust removal mechanism is composed of a dust collection head arranged on one side inside the fixed shell 52, a dust collection hose communicated with the dust collection head and penetrating through one side of the fixed shell 52, a dust collection fan and a collection shell for collecting the impurities sucked by the dust collection fan, namely, the impurities inside the fixed shell 52 are removed by the operation of the dust collection fan and the connection of the dust collection hose and the dust collection head;

fixed shell 52 bottom just is located and is equipped with the vibration roguing mechanism 10 that the downthehole impurity that contains of SiC wafer that is drilling goes on getting rid of on workstation 1, vibration roguing mechanism 10 is including installing the buffer gear 11 in fixed shell 52 bottom four corners, buffer gear 11 is the slide bar of fixed shell 52 bottom, overlaps the sliding sleeve that establishes in the slide bar bottom outside and sets up inside the sliding sleeve and be used for supporting the positioning spring who connects the slide bar and constitute, four buffer gear 11 all installs on workstation 1, be equipped with dwang 101 on workstation 1, dwang 101 center department is equipped with gear drive mechanism 12, and gear drive mechanism 12 is that servo motor drive driving gear, driving gear outside meshing are connected with driven gear, and driven gear overlaps and establishes in the dwang 101 outside, through driving motor 94 moves, and further messenger driven gear drives dwang 101 and rotates, and the both ends of dwang 101 are fixed mounting respectively have eccentric wheel 102, sliding connection has gyro wheel 103 on eccentric wheel 102, and gyro wheel 103 moves relative eccentric wheel 102, install dead lever 104 on the gyro wheel 103, dead lever 104 makes and is connected between gyro wheel 103 and the set casing 52, and along with reciprocating of gyro wheel 103 to and four buffer gear 11 supports, makes the vibration of the certain degree of SiC wafer on the backup pad 3, makes the impurity of its drilling department drop.

When impurities in the aperture of the SiC wafer are removed, the electric push rod 61 retracts to move the circular plate 51 to the inside of the fixed shell 52, at this time, the SiC wafer is held by the two holding plates 31 and kept in a fixed state relative to the supporting plate 3, then, the dust removing mechanism 7 operates to remove the impurities on the supporting plate 3, meanwhile, the gear transmission mechanism 12 operates to enable the rotating rod 101 to drive the eccentric wheels 102 at the two ends of the rotating rod 101 to rotate around the rotating rod 101, and the roller 103 drives the fixed shell 52 to vibrate up and down for a certain extent relative to the workbench 1 along the eccentric wheels 102 and supported by the buffer mechanism 11, so that the effect of vibrating the SiC wafer is achieved, and the impurities in the aperture inside the SiC wafer are removed by vibration.

It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.

Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.