阅读说明：本技术 激光结晶设备 (Laser crystallization equipment ) 是由 林东彦 高正云 金炫真 柳埙澈 薛煐陈 温吉容 李演学 曹惠智 于 2021-05-06 设计创作，主要内容包括：本发明的实施例涉及一种激光结晶设备,所述激光结晶设备包括：多个激光发生器,所述多个激光发生器产生多个激光束；多个衰减器,所述多个衰减器调节所述多个激光束的能量强度；以及光学模块,所述光学模块使所述多个衰减器的输出重叠以输出线束。所述多个衰减器包括第一衰减器和第二衰减器,所述第一衰减器衰减所述多个激光束中的对应激光束的所述能量强度,并且所述第二衰减器保持所述多个激光束中的对应激光束的所述能量强度。(Embodiments of the present invention relate to a laser crystallization apparatus, including: a plurality of laser generators that generate a plurality of laser beams; a plurality of attenuators that adjust energy intensities of the plurality of laser beams; and an optical module that overlaps outputs of the plurality of attenuators to output a beam. The plurality of attenuators includes a first attenuator that attenuates the energy intensity of a corresponding laser beam of the plurality of laser beams and a second attenuator that maintains the energy intensity of a corresponding laser beam of the plurality of laser beams.)

1. A laser crystallization apparatus, wherein the laser crystallization apparatus comprises:

a plurality of laser generators that generate a plurality of laser beams;

a plurality of attenuators that adjust energy intensities of the plurality of laser beams; and

an optical module that overlaps outputs of the plurality of attenuators and outputs a beam,

wherein the plurality of attenuators includes a first attenuator that attenuates the energy intensity of a corresponding laser beam of the plurality of laser beams and a second attenuator that maintains the energy intensity of a corresponding laser beam of the plurality of laser beams.

2. The laser crystallization apparatus according to claim 1,

wherein the first attenuator includes a first attenuating unit and a second attenuating unit that transmit and reflect the corresponding laser beam, and the second attenuator includes a first plate and a second plate that maintain the energy intensity of the corresponding laser beam.

3. The laser crystallization apparatus according to claim 2,

wherein the first attenuation unit is inclined at a predetermined angle with respect to a traveling direction of the corresponding laser beam, and the second attenuation unit is inclined at a predetermined angle with respect to the traveling direction of the corresponding laser beam in an opposite direction to the first attenuation unit.

4. The laser crystallization apparatus according to claim 2,

wherein the first plate and the second plate of the second attenuator are arranged parallel to a traveling direction of the corresponding laser beam and spaced apart from a path of the corresponding laser beam by a predetermined distance.

5. The laser crystallization apparatus according to claim 1,

wherein the optical module includes:

at least one mirror reflecting all of the corresponding laser beams;

at least one beam splitter reflecting a portion of the corresponding laser beam and transmitting another portion of the corresponding laser beam;

a telescope lens magnifying the corresponding laser beam reflected by the at least one mirror or passing through the at least one beam splitter;

a homogenizer equalizing the corresponding laser beams passing through the telescope lens; and

a plurality of cylindrical lenses adjusting an intensity and a focal length of the corresponding laser beams passing through the homogenizer to output the beam bundle.

6. The laser crystallization apparatus according to claim 1,

wherein the plurality of laser generators include a first laser generator, a second laser generator, a third laser generator, a fourth laser generator, a fifth laser generator, and a sixth laser generator,

the plurality of attenuators further includes a third attenuator, a fourth attenuator, a fifth attenuator, and a sixth attenuator, the first attenuator, the second attenuator, the third attenuator, the fourth attenuator, the fifth attenuator, and the sixth attenuator each correspond to the first laser generator, the second laser generator, the third laser generator, the fourth laser generator, the fifth laser generator, and the sixth laser generator, and

the first attenuator and the sixth attenuator attenuate the energy intensity of the corresponding laser beam, and the second attenuator, the third attenuator, the fourth attenuator, and the fifth attenuator maintain the energy intensity of the corresponding laser beam.

7. The laser crystallization apparatus according to claim 6,

wherein each of the first and sixth attenuators includes a first attenuation unit and a second attenuation unit that transmit and reflect the corresponding laser beam, and each of the second, third, fourth, and fifth attenuators includes a first plate and a second plate that maintain the energy intensity of the corresponding laser beam.

8. The laser crystallization apparatus according to claim 7,

wherein the first attenuation unit is inclined at a predetermined angle with respect to a traveling direction of the corresponding laser beam, and the second attenuation unit is inclined at a predetermined angle with respect to the traveling direction of the corresponding laser beam in an opposite direction to the first attenuation unit,

wherein the first plate and the second plate are arranged parallel to the traveling direction of the corresponding laser beam and spaced apart from a path of the corresponding laser beam by a predetermined distance.

9. The laser crystallization apparatus according to claim 1,

wherein the plurality of laser generators includes a first laser generator, a second laser generator, a third laser generator, and a fourth laser generator,

the plurality of attenuators further includes a third attenuator and a fourth attenuator, the first attenuator, the second attenuator, the third attenuator, and the fourth attenuator each correspond to the first laser generator, the second laser generator, the third laser generator, and the fourth laser generator, and

the first and fourth attenuators attenuate the energy intensity of the corresponding laser beam, and the second and third attenuators maintain the energy intensity of the corresponding laser beam.

10. The laser crystallization apparatus according to claim 9,

wherein each of the first and fourth attenuators includes first and second attenuation units that transmit and reflect the corresponding laser beam, and each of the second and third attenuators includes first and second plates that maintain the energy intensity of the corresponding laser beam.

Technical Field

Embodiments of the present invention relate to a laser crystallization apparatus.

Background

The thin film transistor is used as a switching element of a display device such as a liquid crystal display device or an organic light emitting device. The thin film transistor may include a gate electrode, an active layer, a source electrode, and a drain electrode. The active layer may include amorphous silicon or polysilicon. Polycrystalline silicon has an electrical mobility characteristic that is tens to hundreds times higher than that of amorphous silicon.

Polycrystalline silicon may be formed by depositing amorphous silicon and then crystallizing the amorphous silicon. The amorphous silicon can be crystallized into polycrystalline silicon by heating the amorphous silicon in a heating furnace or irradiating the amorphous silicon with laser light. In the crystallization method using a laser, crystallization can be performed at a relatively low temperature for a relatively short time.

Disclosure of Invention

An advantage and feature of the present invention is to provide a laser crystallization apparatus capable of improving a crystallization margin and a crystallization uniformity by reducing a long axis angle distribution of a beam.

However, the advantages and features of the present invention are not limited to those set forth herein. The above and other advantages and features of the present invention will become more apparent to those of ordinary skill in the art to which the present invention pertains by referring to the detailed description of the present invention given below.

In an embodiment of the present invention, a laser crystallization apparatus includes: a plurality of laser generators that generate a plurality of laser beams; a plurality of attenuators that adjust energy intensities of the plurality of laser beams; and an optical module that overlaps outputs of the plurality of attenuators and outputs a wire harness. The plurality of attenuators includes a first attenuator that attenuates the energy intensity of a corresponding laser beam of the plurality of laser beams and a second attenuator that maintains the energy intensity of the corresponding laser beam.

In an embodiment, the first attenuator may include first and second attenuation units that transmit and reflect the corresponding laser beams, and the second attenuator may include first and second plates that maintain the energy intensity of the corresponding laser beams.

In an embodiment, the first attenuation unit may be inclined at a predetermined angle with respect to a traveling direction of the corresponding laser beam, and the second attenuation unit may be inclined at a predetermined angle with respect to the traveling direction of the corresponding laser beam in an opposite direction to the first attenuation unit.

In an embodiment, the first attenuator may further include: a first base unit supporting the first attenuation unit; a second base unit supporting the second damping unit; and a control unit that is connected to each of the first base unit and the second base unit and rotates the first base unit and the second base unit in a first rotational direction or a second rotational direction opposite to the first rotational direction.

In an embodiment, the first plate and the second plate of the second attenuator may be arranged parallel to a traveling direction of the corresponding laser beam and may be spaced apart from a path of the corresponding laser beam by a predetermined distance.

In an embodiment, the second attenuator may further include: a first base unit supporting the first plate; and a second base unit supporting the second plate. The first and second base units of the second attenuator may be fixed such that the first and second plates are spaced apart from the corresponding laser beams.

In an embodiment, the plurality of laser generators may generate laser beams having the same energy intensity.

In an embodiment, the optical module may include: at least one mirror reflecting all of the corresponding laser beams; at least one beam splitter reflecting a portion of the corresponding laser beam and transmitting another portion of the corresponding laser beam; and a telescope lens magnifying the corresponding laser beam reflected by the at least one mirror or passing through the at least one beam splitter.

In an embodiment, the optical module may further include: a homogenizer equalizing the corresponding laser beams passing through the telescope lens; and a plurality of cylindrical lenses adjusting an intensity and a focal length of the corresponding laser beams passing through the homogenizer to output the beam bundle.

In an embodiment, the plurality of laser generators may include a first laser generator, a second laser generator, a third laser generator, a fourth laser generator, a fifth laser generator, and a sixth laser generator, the plurality of attenuators may further include a third attenuator, a fourth attenuator, a fifth attenuator, and a sixth attenuator, the first attenuator, the second attenuator, the third attenuator, the fourth attenuator, the fifth attenuator, and the sixth attenuator may correspond to the first laser generator, the second laser generator, the third laser generator, the fourth laser generator, the fifth laser generator, and the sixth laser generator, respectively, and the first attenuator and the sixth attenuator may attenuate the energy intensity of the corresponding laser beam, and the second attenuator, the fifth laser generator, and the sixth attenuator may attenuate the energy intensity of the corresponding laser beam, The third, fourth, and fifth attenuators may maintain the energy intensity of the corresponding laser beam.

In an embodiment, each of the first and sixth attenuators may include first and second attenuation units that transmit and reflect the corresponding laser beam, and each of the second, third, fourth, and fifth attenuators may include first and second plates that maintain the energy intensity of the corresponding laser beam.

In an embodiment, the first attenuation unit may be inclined at a predetermined angle with respect to a traveling direction of the corresponding laser beam, and the second attenuation unit may be inclined at a predetermined angle with respect to the traveling direction of the corresponding laser beam in an opposite direction to the first attenuation unit.

In an embodiment, each of the first attenuator and the second attenuator may further include: a first base unit supporting the first attenuation unit; a second base unit supporting the second damping unit; and a control unit that is connected to the first base unit and the second base unit and rotates the first base unit and the second base unit in a first rotation direction or a second rotation direction opposite to the first rotation direction.

In an embodiment, the first plate and the second plate may be arranged parallel to the traveling direction of the corresponding laser beam and may be spaced apart from a path of the corresponding laser beam by a predetermined distance.

In an embodiment, each of the second attenuator, the third attenuator, the fourth attenuator, and the fifth attenuator may further include: a first base unit supporting the first plate; and a second base unit supporting the second plate. The first and second base units of each of the second, third, fourth, and fifth attenuators may be fixed such that the first and second plates are spaced apart from the corresponding laser beams.

In an embodiment, the plurality of laser generators may include a first laser generator, a second laser generator, a third laser generator, and a fourth laser generator, the plurality of attenuators may further include a third attenuator and a fourth attenuator, the first attenuator, the second attenuator, the third attenuator, and the fourth attenuator may correspond to the first laser generator, the second laser generator, the third laser generator, and the fourth laser generator, respectively, and the first attenuator and the fourth attenuator may attenuate the energy intensity of the corresponding laser beam, and the second attenuator and the third attenuator may maintain the energy intensity of the corresponding laser beam.

In an embodiment, each of the first and fourth attenuators may include first and second attenuation units that transmit and reflect the corresponding laser beam, and each of the second and third attenuators may include first and second plates that maintain the energy intensity of the corresponding laser beam.

In an embodiment, the first attenuation unit may be inclined at a predetermined angle with respect to a traveling direction of the corresponding laser beam, and the second attenuation unit may be inclined at a predetermined angle with respect to the traveling direction of the corresponding laser beam in an opposite direction to the first attenuation unit.

In an embodiment, each of the first attenuator and the fourth attenuator may further include: a first base unit supporting the first attenuation unit; a second base unit supporting the second damping unit; and a control unit that is connected to the first base unit and the second base unit and rotates the first base unit and the second base unit in a first rotation direction or a second rotation direction opposite to the first rotation direction.

In an embodiment, the first and second plates of each of the second and third attenuators may be arranged parallel to the traveling direction of the corresponding laser beam, and may be spaced apart from the path of the corresponding laser beam by a predetermined distance.

Drawings

The above and other embodiments, advantages, and features of the present invention will become more apparent by describing in detail embodiments thereof with reference to the attached drawings in which:

FIG. 1 is a view of an embodiment of a laser crystallization apparatus;

FIG. 2 is a view of an embodiment of a laser crystallization apparatus;

FIG. 3 is a diagram illustrating an embodiment of a laser generator and an attenuator of a laser crystallization apparatus;

FIG. 4 is a view showing an embodiment of a first attenuator in the laser crystallization apparatus;

FIG. 5 is a view showing an embodiment of a second attenuator in the laser crystallization apparatus;

FIG. 6 is a diagram illustrating an embodiment of an output of a laser crystallization apparatus;

FIG. 7 is a diagram illustrating another embodiment of the output of a laser crystallization apparatus;

FIG. 8 is a graph illustrating an embodiment of angular distribution of crystallization margin with respect to the long axis in a laser crystallization apparatus;

FIG. 9 is a graph illustrating an embodiment of crystallization uniformity with respect to long axis angular distribution in a laser crystallization apparatus;

FIG. 10 is a view explaining an example of a long axis angular distribution according to an output of a laser crystallization apparatus;

FIG. 11 is a view showing an embodiment of beam divergence according to the output of a laser crystallization apparatus;

FIG. 12 is a view showing another embodiment of a laser generator and an attenuator of the laser crystallization apparatus;

FIG. 13 is a diagram illustrating another embodiment of the output of a laser crystallization apparatus;

FIG. 14 is a diagram illustrating another embodiment of the output of a laser crystallization apparatus;

FIG. 15 is a view showing another embodiment of a laser generator and an attenuator in the laser crystallization apparatus;

FIG. 16 is a diagram illustrating another embodiment of the output of a laser crystallization apparatus;

FIG. 17 is a diagram illustrating another embodiment of the output of a laser crystallization apparatus; and

FIG. 18 is a flow chart illustrating an embodiment of a laser crystallization process of a laser crystallization apparatus.

Detailed Description

In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of various embodiments or implementations of the invention. As used herein, "examples" and "embodiments" are interchangeable words, which are non-limiting examples of apparatus or methods that employ one or more of the inventive concepts disclosed herein. It may be evident, however, that the various embodiments may be practiced without these specific details or with one or more equivalent arrangements. In other instances, well-known structures and devices are shown in block diagram form in order to avoid unnecessarily obscuring the various embodiments. Moreover, the various embodiments may be different, but are not necessarily exclusive. For example, particular shapes, configurations and characteristics of embodiments may be used or practiced in another embodiment without departing from the inventive concept.

Unless otherwise indicated, the illustrated embodiments are to be understood as providing exemplary features of varying detail of some ways in which the inventive concepts may be practiced. Thus, unless otherwise indicated, the features, components, modules, layers, films, panels, regions, and/or aspects and the like (individually or collectively, "elements" hereinafter) of the various embodiments may be otherwise combined, separated, interchanged, and/or rearranged without departing from the inventive concepts.

Cross-hatching and/or shading is typically provided in the figures to clarify the boundaries between adjacent elements. As such, unless otherwise indicated, the presence or absence of cross-hatching or shading does not convey or indicate any preference or requirement for a particular material, material property, dimension, proportion, commonality between the illustrated elements, and/or any other characteristic, attribute, property, etc. of the elements. Further, in the drawings, the size and relative sizes of elements may be exaggerated for clarity and/or descriptive purposes. While embodiments may be practiced differently, the particular process sequence may be performed differently than described. For example, two processes described in succession may be executed substantially concurrently or in the reverse order to that described. In addition, like reference numerals denote like elements.

When an element such as a layer is referred to as being "on," "connected to," or "coupled to" another element, it can be directly on, connected or coupled to the other element or intervening elements may be present. However, when an element is referred to as being "directly on," "directly connected to" or "directly coupled to" another element, there are no intervening elements present. For purposes of this specification, the term "connected" may refer to physical, electrical, and/or fluid connections with or without intermediate elements. Further, the X, Y, and Z axes are not limited to three axes such as a rectangular coordinate system of the X, Y, and Z axes, and may be interpreted in a broader sense. For example, the X, Y, and Z axes may be perpendicular to each other, or may represent different directions that are not perpendicular to each other. For the purposes of this disclosure, "at least one of X, Y and Z" and "at least one selected from the group consisting of X, Y and Z" can be construed as any combination of two or more of X only, Y only, Z only, or X, Y and Z, such as, for example, XYZ, XYY, YZ, and ZZ. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

Although the terms first, second, etc. may be used herein to describe various types of elements, these elements should not be limited by these terms. These terms are used to distinguish one element from another. Thus, a first element discussed below could be termed a second element without departing from the teachings of the present disclosure.

Spatially relative terms such as "under …," "under …," "under …," "under (portion)," on …, "" over (portion), "over …," "higher" and "side" (e.g., as in "side wall"), etc., may be used herein for descriptive purposes and thereby describe one element's relationship to another element(s) as shown in the figures. Spatially relative terms are intended to encompass different orientations of the device in use, operation, and/or manufacture in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary term "under …" can encompass both an orientation of "over …" and "under …". Further, the device may be otherwise oriented (e.g., rotated 90 degrees or at other orientations) and the spatially relative terms used herein may be interpreted accordingly.

The terminology used herein is for the purpose of describing particular embodiments and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. Furthermore, the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, components, and/or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. It is also noted that, as used herein, the terms "substantially," "about," and other similar terms are used as approximate terms and not as degree terms, and as such are used to describe inherent deviations in the measured, calculated, and/or provided values that would be recognized by one of ordinary skill in the art.

Various embodiments are described herein with reference to cross-sectional and/or exploded views, which are schematic illustrations of idealized embodiments and/or intermediate structures. As such, deviations from the shapes of the figures, for example due to manufacturing techniques and/or tolerances, are to be expected. Thus, embodiments disclosed herein are not necessarily to be construed as limited to the particular illustrated shapes of regions but are to include deviations in shapes that result, for example, from manufacturing. In this manner, the regions illustrated in the figures may be schematic in nature and the shapes of the regions may not reflect the actual shape of a region of a device and, as such, are not necessarily intended to be limiting.

Some embodiments are described and illustrated in the drawings from the perspective of functional blocks, units and/or modules as is conventional in the art. Those skilled in the art will appreciate that the blocks, units and/or modules are physically implemented by electronic circuits (or circuits) such as logic circuits, discrete components, microprocessors, hardwired circuitry, memory elements, wired connections, and the like, which may be formed using semiconductor-based fabrication techniques or other fabrication techniques. In the case of blocks, units, and/or modules implemented by a microprocessor or other similar hardware, they may be programmed and controlled using software (e.g., microcode) to perform the various functions discussed herein, and may optionally be driven by firmware and/or software. It is also contemplated that each block, unit, and/or module may be implemented by dedicated hardware, or as a combination of dedicated hardware for performing some functions and a processor (e.g., one or more programmed microprocessors and associated circuitry) for performing other functions. In addition, each block, unit and/or module of some embodiments may be physically separated into two or more interacting and discrete blocks, units and/or modules without departing from the scope of the present invention. Furthermore, the blocks, units and/or modules of some embodiments may be physically combined into more complex blocks, units and/or modules without departing from the scope of the present invention.

Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this disclosure belongs. Unless explicitly defined as such herein, terms such as those defined in commonly used dictionaries should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and will not be interpreted in an idealized or overly formal sense.

Fig. 1 is a view of an embodiment of a laser crystallization apparatus, and fig. 2 is a view of an embodiment of a laser crystallization apparatus.

Referring to fig. 1 and 2, the laser crystallization apparatus 10 includes a plurality of laser generators 100, a plurality of attenuators 200, and an optical module 300.

Each of the plurality of laser generators 100 may generate the first laser beam L1 and supply the first laser beam L1 to a corresponding attenuator of the plurality of attenuators 200. In an embodiment, for example, the laser generator 100 may include a laser oscillator and a window. The laser oscillator may generate a first laser beam L1, and the first laser beam L1 may pass through the window to be supplied to the attenuator 200. Each of the plurality of laser generators 100 may generate the first laser beams L1 having the same energy magnitude or the same energy density.

In an embodiment, for example, the first laser beam L1 generated from the laser generator 100 may have a wavelength of about 300 nanometers (nm) to about 550nm, but the present invention is not limited thereto. In an embodiment, for example, the first laser beam L1 generated from the laser generator 100 may include P-polarized light and S-polarized light.

Each of the plurality of attenuators 200 may adjust an energy intensity of the first laser beam L1 generated from the pair of stress light generators 100 to obtain the second laser beam L2, and may supply the second laser beam L2 to the optical module 300. Some attenuators 200 of the plurality of attenuators 200 may attenuate the energy intensity corresponding to the first laser beam L1, and other attenuators 200 of the plurality of attenuators 200 may maintain the energy intensity corresponding to the first laser beam L1. In an embodiment, for example, some attenuators 200 may reduce the P-polarized light and the S-polarized light, respectively, of the corresponding first laser beam L1 to output a second laser beam L2. The other attenuators 200 may maintain the P-polarized light and the S-polarized light corresponding to the first laser beam L1, respectively, to output a second laser beam L2.

The plurality of laser generators 100 may include a first laser generator 110, a second laser generator 120, a third laser generator 130, a fourth laser generator 140, a fifth laser generator 150, and a sixth laser generator 160, and the plurality of attenuators 200 may include a first attenuator 210, a second attenuator 220, a third attenuator 230, a fourth attenuator 240, a fifth attenuator 250, and a sixth attenuator 260. The first to sixth laser generators 110 to 160 may correspond to the first to sixth attenuators 210 to 260, respectively, and may supply the first laser beam L1 to the first to sixth attenuators 210 to 260, respectively. Each of the first to sixth attenuators 210 to 260 may attenuate or maintain the energy intensity of the first laser beam L1 to supply the second laser beam L2 to the optical module 300. The "attenuator" referred to herein may also be referred to as a "laser energy modulation element" for attenuating or maintaining the energy intensity of a laser beam.

By overlapping the second laser beams L2 output from the plurality of attenuators 200, the optical module 300 may output the beam L3, and the optical module 300 may supply the beam L3 to the film 21 disposed on the substrate 20. Here, when the laser crystallization process is performed by the laser crystallization apparatus 10, the substrate 20 on which the thin film 21 is disposed may be disposed (e.g., mounted) on the stage 30 and supported and fixed by the stage 30. The film 21 may be an amorphous silicon layer. In an embodiment, the amorphous silicon layer may be provided by a low pressure chemical vapor deposition method, an atmospheric pressure chemical vapor deposition method, a plasma enhanced chemical vapor deposition ("PECVD") method, a sputtering method, or a vacuum evaporation method. For example, the wiring harness L3 may crystallize amorphous silicon on the substrate 20.

The optical module 300 may include at least one mirror (mirror) and at least one beam splitter (splitter). The mirror may reflect the entirety of the second laser beam L2. The beam splitter may reflect a part of the second laser beam L2 and transmit the remaining part (another part) of the second laser beam L2. In an embodiment, for example, the beam splitter may reflect a portion of the P-polarized light of the second laser beam L2 and transmit the remaining portion (another portion) of the P-polarized light of the second laser beam L2, and may reflect a portion of the S-polarized light of the second laser beam L2 and transmit the remaining portion (another portion) of the S-polarized light of the second laser beam L2.

The optical module 300 may further include a telescope lens 340. The telescope lens 340 may magnify the second laser beam L2 passing through the at least one mirror and the at least one beam splitter. The telescope lens 340 may magnify the second laser beam L2 to a predetermined intensity and supply the second laser beam L2 to a homogenizer (homogenizer) 350.

The optical module 300 may include a first mirror 311, a second mirror 312, a third mirror 313, a fourth mirror 314, a fifth mirror 315, a sixth mirror 316, a seventh mirror 317, an eighth mirror 318, a ninth mirror 319, a tenth mirror 320, an eleventh mirror 321, and a tenth mirror 322, a first beam splitter 331, a second beam splitter 332, and a third beam splitter 333, a telescope lens 340, a homogenizer 350, and a first cylindrical lens 360 and a second cylindrical lens 370. The telescope lens 340 may include a first telescope lens 341, a second telescope lens 342, a third telescope lens 343, a fourth telescope lens 344, a fifth telescope lens 345, and a sixth telescope lens 346.

The first reflecting mirror 311 may reflect the second laser beam L2 output from the first attenuator 210 and supply the second laser beam L2 to the first beam splitter 331; and the first beam splitter 331 may reflect a portion of the second laser beam L2 supplied from the first mirror 311 and supply a portion of the second laser beam L2 to the third telescope lens 343, and may transmit another portion of the second laser beam L2 and supply another portion of the second laser beam L2 to the second mirror 312. The second mirror 312 may reflect another part of the second laser beam L2 supplied from the first beam splitter 331 and supply another part of the second laser beam L2 to the fourth telescope lens 344.

The third reflecting mirror 313 may reflect the second laser beam L2 output from the second attenuator 220 and supply the second laser beam L2 to the second beam splitter 332; and the second beam splitter 332 may reflect a part of the second laser beam L2 supplied from the third mirror 313 and supply a part of the second laser beam L2 to the second telescope lens 342, and may transmit another part of the second laser beam L2 and supply another part of the second laser beam L2 to the fourth mirror 314. The fourth reflecting mirror 314 may reflect another part of the second laser beam L2 supplied from the second beam splitter 332 and supply another part of the second laser beam L2 to the fifth telescope lens 345.

The fifth mirror 315 may reflect the second laser beam L2 output from the third attenuator 230 and supply the second laser beam L2 to the third beam splitter 333; and the third beam splitter 333 may reflect a part of the second laser beam L2 supplied from the fifth mirror 315 and supply a part of the second laser beam L2 to the first telescope lens 341, and may transmit another part of the second laser beam L2 and supply another part of the second laser beam L2 to the sixth mirror 316. The sixth mirror 316 may reflect another part of the second laser beam L2 supplied from the third beam splitter 333 and supply another part of the second laser beam L2 to the sixth telescope lens 346.

The seventh mirror 317 may reflect the second laser beam L2 output from the fourth attenuator 240 and supply the second laser beam L2 to the eighth mirror 318, and the eighth mirror 318 may reflect the second laser beam L2 and supply the second laser beam L2 to the third beam splitter 333. The third beam splitter 333 may transmit a part of the second laser beam L2 supplied from the eighth mirror 318 and supply a part of the second laser beam L2 to the first telescope lens 341, and may reflect another part of the second laser beam L2 and supply another part of the second laser beam L2 to the sixth mirror 316. The sixth mirror 316 may reflect another part of the second laser beam L2 supplied from the third beam splitter 333 and supply another part of the second laser beam L2 to the sixth telescope lens 346. Accordingly, the third beam splitter 333 may overlap a portion of the second laser beam L2 of the third attenuator 230 and a portion of the second laser beam L2 of the fourth attenuator 240, and supply a portion of the second laser beam L2 of the third attenuator 230 and a portion of the second laser beam L2 of the fourth attenuator 240 to the first telescope lens 341. Further, the third beam splitter 333 may overlap another part of the second laser beam L2 of the third attenuator 230 and another part of the second laser beam L2 of the fourth attenuator 240, and supply another part of the second laser beam L2 of the third attenuator 230 and another part of the second laser beam L2 of the fourth attenuator 240 to the sixth telescope lens 346.

The ninth mirror 319 may reflect the second laser beam L2 output from the fifth attenuator 250 and supply the second laser beam L2 to the tenth mirror 320, and the tenth mirror 320 may reflect the second laser beam L2 and supply the second laser beam L2 to the second beam splitter 332. The second beam splitter 332 may transmit a portion of the second laser beam L2 supplied from the tenth mirror 320 and supply a portion of the second laser beam L2 to the second telescope lens 342, and may reflect another portion of the second laser beam L2 and supply another portion of the second laser beam L2 to the fourth mirror 314. The fourth reflecting mirror 314 may reflect another part of the second laser beam L2 supplied from the second beam splitter 332 and supply another part of the second laser beam L2 to the fifth telescope lens 345. Accordingly, the second beam splitter 332 may overlap a portion of the second laser beam L2 of the second attenuator 220 and a portion of the second laser beam L2 of the fifth attenuator 250 and supply a portion of the second laser beam L2 of the second attenuator 220 and a portion of the second laser beam L2 of the fifth attenuator 250 to the second telescope lens 342. Further, the second beam splitter 332 may overlap another part of the second laser beam L2 of the second attenuator 220 and another part of the second laser beam L2 of the fifth attenuator 250, and supply another part of the second laser beam L2 of the second attenuator 220 and another part of the second laser beam L2 of the fifth attenuator 250 to the fifth telescope lens 345.

The eleventh reflecting mirror 321 may reflect the second laser beam L2 output from the sixth attenuator 260 and supply the second laser beam L2 to the tenth reflecting mirror 322, and the tenth reflecting mirror 322 may reflect the second laser beam L2 and supply the second laser beam L2 to the first beam splitter 331. The first beam splitter 331 may transmit a portion of the second laser beam L2 supplied from the tenth mirror 322 and supply a portion of the second laser beam L2 to the third telescope lens 343, and may reflect another portion of the second laser beam L2 and supply another portion of the second laser beam L2 to the second mirror 312. The second mirror 312 may reflect another part of the second laser beam L2 supplied from the first beam splitter 331 and supply another part of the second laser beam L2 to the fourth telescope lens 344. Accordingly, the first beam splitter 331 may overlap a portion of the second laser beam L2 of the first attenuator 210 and a portion of the second laser beam L2 of the sixth attenuator 260 and supply a portion of the second laser beam L2 of the first attenuator 210 and a portion of the second laser beam L2 of the sixth attenuator 260 to the third telescope lens 343. Further, the first beam splitter 331 may overlap another part of the second laser beam L2 of the first attenuator 210 and another part of the second laser beam L2 of the sixth attenuator 260, and supply another part of the second laser beam L2 of the first attenuator 210 and another part of the second laser beam L2 of the sixth attenuator 260 to the fourth telescope lens 344.

Accordingly, the first to tenth reflection mirrors 311 to 322, the first to third beam splitters 331 to 333, and the first to sixth telescope lenses 341 to 346 may overlap the plurality of second laser beams L2 output from the first to sixth attenuators 210 to 260 and supply the plurality of second laser beams L2 to the homogenizer 350.

The homogenizer 350 may equalize the plurality of second laser beams L2 output from the first to sixth telescope lenses 341 to 346 to uniformly distribute the energy density of the laser beams.

The first cylindrical lens 360 may adjust the intensity and focal length of the second laser beam L2 output from the homogenizer 350 and supply the second laser beam L2 to the second cylindrical lens 370, and the second cylindrical lens 370 may adjust the intensity and focal length of the second laser beam L2 output from the first cylindrical lens 360 and output the beam L3. The beam L3 output from the optical module 300 may correspond to a linear laser beam.

Hereinafter, the configuration of the optical module 300 is not limited to the illustration of fig. 2. When necessary, the design of the optical module 300 may be changed so as to generate the predetermined beam L3 by receiving the second laser beams L2 output from the plurality of attenuators 200.

FIG. 3 is a diagram illustrating an embodiment of a laser generator and an attenuator of a laser crystallization apparatus.

Referring to fig. 3, the plurality of laser generators 100 may include first to sixth laser generators 110 to 160, and the plurality of attenuators 200 may include first to sixth attenuators 210 to 260. The first to sixth laser generators 110 to 160 may correspond to the first to sixth attenuators 210 to 260, respectively, and may supply the first laser beam L1 to the first to sixth attenuators 210 to 260, respectively. Each of the first to sixth attenuators 210 to 260 may attenuate or maintain the energy intensity of the first laser beam L1 to supply the second laser beam L2 to the optical module 300 (refer to fig. 1 and 2).

The first attenuator 210 may attenuate the energy intensity of the first laser beam L1 of the first laser generator 110 to supply the second laser beam L2a to the optical module 300. The first attenuator 210 may attenuate the energy intensity of each of the P-polarized light and the S-polarized light of the first laser beam L1 to output a second laser beam L2 a. The energy intensity of the second laser beam L2a may be less than the energy intensity of the first laser beam L1.

The first attenuator 210 may include a first attenuating unit 211 and a second attenuating unit 213. The first and second attenuation units 211 and 213 may be disposed along a traveling direction of the first laser beam L1, and may transmit and reflect the first laser beam L1. The first attenuation unit 211 may be inclined at a predetermined angle with respect to the traveling direction of the first laser beam L1. The first attenuation unit 211 may transmit a portion of the first laser beam L1 and reflect another portion of the first laser beam L1. The transmittance and reflectance of the first attenuating unit 211 may be controlled depending on the incident angle of the first laser beam L1. One surface of the first attenuation unit 211 is inclined at a predetermined angle with respect to the traveling direction of the first laser beam L1, thereby controlling the transmission amount of the first laser beam L1. In an embodiment, for example, the energy intensity of the first laser beam L1 transmitted through the first attenuation unit 211 when the incident angle of the first laser beam L1 is small may be greater than the energy intensity of the first laser beam L1 transmitted through the first attenuation unit 211 when the incident angle of the first laser beam L1 is large. The output of the first attenuation unit 211 may be supplied to the second attenuation unit 213.

The second attenuation unit 213 may compensate for a path of the laser beam output from the first attenuation unit 211. The second attenuation unit 213 may be inclined at a predetermined angle in a direction opposite to the first attenuation unit 211 with respect to the traveling direction of the first laser beam L1. The tilt of the second damping unit 213 may be changed in response to a change in the tilt of the first damping unit 211. In an embodiment, for example, the incident angle of the first laser beam L1 incident on the first attenuation unit 211 may correspond to the incident angle of the output of the first attenuation unit 211 incident on the second attenuation unit 213. Accordingly, the second attenuation unit 213 may compensate for the path of the laser beam output from the first attenuation unit 211, so that the second laser beam L2a output from the second attenuation unit 213 may maintain the traveling direction of the first laser beam L1 incident on the first attenuation unit 211.

The second attenuator 220 may maintain the energy intensity of the first laser beam L1 of the second laser generator 120 to supply the second laser beam L2b to the optical module 300. The second attenuator 220 may maintain the energy intensity of each of the P-polarized light and the S-polarized light of the first laser beam L1 to output a second laser beam L2 b.

The second attenuator 220 may include a first plate 221 and a second plate 223. The first plate 221 and the second plate 223 may be arranged in parallel along the traveling direction of the first laser beam L1, and may pass the first laser beam L1 as it is. Each of the first plate 221 and the second plate 223 may be spaced apart from the path of the first laser beam L1 by a predetermined distance. The first laser beam L1 may not pass through the first plate 221 and the second plate 223 and may maintain the existing energy intensity. Therefore, the energy intensity of the second laser beam L2b as the output of the second attenuator 220 may be substantially the same as the energy intensity of the first laser beam L1 as the input of the second attenuator 220.

The third attenuator 230 may include a first plate 231 and a second plate 233, the fourth attenuator 240 may include a first plate 241 and a second plate 243, and the fifth attenuator 250 may include a first plate 251 and a second plate 253. The third, fourth and fifth attenuators 230, 240, 250 differ from the second attenuator 220 only in the corresponding laser generator 100 and may have the same configuration as the second attenuator 220. Accordingly, each of the third, fourth, and fifth attenuators 230, 240, and 250 maintains the energy intensity of the first laser beam L1 of each of the third, fourth, and fifth laser generators 130, 140, and 150 to supply the second laser beam L2b to the optical module 300. The energy intensity of the second laser beam L2b, which is the output of each of the third attenuator 230, the fourth attenuator 240, and the fifth attenuator 250, may be substantially the same as the energy intensity of the first laser beam L1.

The sixth attenuator 260 may include a first attenuating unit 261 and a second attenuating unit 263. The first attenuator 210 and the sixth attenuator 260 differ from each other only in the corresponding laser generator 100, and may have the same configuration as each other. Accordingly, the first and second attenuation units 261 and 263 of the sixth attenuator 260 may reduce the energy intensity of the first laser beam L1 of the sixth laser generator 160 to supply the second laser beam L2a to the optical module 300.

In an embodiment, for example, when the second laser beam L2a of each of the first and sixth attenuators 210 and 260 is output from the outermost portion of the attenuator 200, each of the first and sixth attenuators 210 and 260 may attenuate the energy intensity of the corresponding first laser beam L1. Further, when the second laser beam L2b of each of the second to fifth attenuators 220 to 250 is output from a region other than the outermost portion of the attenuator 200, each of the second to fifth attenuators 220 to 250 may maintain the energy intensity of the corresponding first laser beam L1. Accordingly, each of the first attenuator 210 and the sixth attenuator 260 may output the second laser beam L2a having a reduced energy intensity, and each of the second attenuator 220 to the fifth attenuator 250 may output the second laser beam L2b having a maintained energy intensity.

FIG. 4 is a view showing an embodiment of a first attenuator in the laser crystallization apparatus.

Referring to fig. 4, the first attenuator 210 may attenuate the energy intensity of the first laser beam L1 of the first laser generator 110 to supply the second laser beam L2a to the optical module 300 (refer to fig. 1 and 2). The energy intensity of the second laser beam L2a may be less than the energy intensity of the first laser beam L1.

The first attenuator 210 may include a first attenuation unit 211, a first base unit 212, a second attenuation unit 213, a second base unit 214, and a control unit 290. The first and second attenuation units 211 and 213 may be disposed along the traveling direction DR1 of the first laser beam L1, and may transmit and reflect the first laser beam L1.

The first attenuation unit 211 may be inclined at a predetermined angle θ with respect to the proceeding direction DR1 of the first laser beam L1. The first attenuation unit 211 may transmit a portion of the first laser beam L1 and reflect another portion of the first laser beam L1. The transmittance and reflectance of the first attenuating unit 211 may be controlled depending on the incident angle of the first laser beam L1. One surface of the first attenuation unit 211 is inclined at a predetermined angle θ with respect to the traveling direction DR1 of the first laser beam L1, thereby controlling the transmission amount of the first laser beam L1. In an embodiment, for example, the energy intensity of the first laser beam L1 transmitted through the first attenuation unit 211 when the incident angle of the first laser beam L1 is small may be greater than the energy intensity of the first laser beam L1 transmitted through the first attenuation unit 211 when the incident angle of the first laser beam L1 is large. The output of the first attenuation unit 211 may be supplied to the second attenuation unit 213.

The first base unit 212 may support the first damping unit 211 and may be rotated in the first rotational direction or the second rotational direction by the control unit 290. In the embodiment, for example, the first rotation direction may correspond to a clockwise direction and the second rotation direction may correspond to a counterclockwise direction, but the present invention is not limited thereto. Accordingly, the first base unit 212 may determine the inclination of the first attenuation unit 211 with respect to the traveling direction DR1 of the first laser beam L1.

The second attenuation unit 213 may compensate for a path of the laser beam output from the first attenuation unit 211. The second attenuating unit 213 may be inclined at a predetermined angle θ in a direction opposite to the first attenuating unit 211 with respect to the traveling direction DR1 of the first laser beam L1. Accordingly, the second attenuation unit 213 may compensate for the path of the laser beam output from the first attenuation unit 211, so that the second laser beam L2a output from the second attenuation unit 213 may maintain the traveling direction DR1 of the first laser beam L1 incident on the first attenuation unit 211.

The second base unit 214 may support the second damping unit 213 and may be rotated in the first rotation direction or the second rotation direction by the control unit 290. Accordingly, the second base unit 214 may determine the inclination of the second attenuation unit 213 with respect to the proceeding direction DR1 of the laser beam output from the first attenuation unit 211. The tilt of the second damping unit 213 may be changed in response to a change in the tilt of the first damping unit 211. In an embodiment, for example, the incident angle of the first laser beam L1 incident on the first attenuation unit 211 may correspond to the incident angle of the output of the first attenuation unit 211 incident on the second attenuation unit 213.

The control unit 290 may be connected to each of the first base unit 212 and the second base unit 214 to rotate the first base unit 212 and the second base unit 214 in the first rotation direction or the second rotation direction. In an embodiment, for example, the control unit 290 may reduce the incident angle of the first laser beam L1 to the first attenuation unit 211 by rotating the first base unit 212, and may reduce the attenuation amount of the energy intensity. In another embodiment, for example, the control unit 290 may increase the incident angle of the first laser beam L1 to the first attenuation unit 211 by rotating the first base unit 212, and may increase the attenuation amount of the energy intensity. Accordingly, the control unit 290 can adjust the tilt of the first base unit 212 and the second base unit 214 in a plurality of operations, and can select an optimal energy portion of the wiring harness L3 (refer to fig. 1 and 2) output from the optical module 300.

Referring to fig. 3 and 4, the sixth attenuator 260 may have the same configuration as the first attenuator 210. Therefore, the description of the sixth attenuator 260 is replaced with the description of the first attenuator 210.

FIG. 5 is a view showing an embodiment of a second attenuator in the laser crystallization apparatus.

Referring to fig. 5, the second attenuator 220 may maintain the energy intensity of the first laser beam L1 of the second laser generator 120 to supply the second laser beam L2b to the optical module 300 (refer to fig. 1 and 2).

The second attenuator 220 may include a first plate 221, a first base unit 222, a second plate 223, and a second base unit 224. The first plate 221 and the second plate 223 may be arranged in parallel along the traveling direction DR1 of the first laser beam L1, and may pass the first laser beam L1 as it is. Each of the first plate 221 and the second plate 223 may be spaced apart from the path of the first laser beam L1 by a predetermined distance d. The first laser beam L1 may not pass through the first plate 221 and the second plate 223 and may maintain the existing energy intensity. Therefore, the energy intensity of the second laser beam L2b as the output of the second attenuator 220 may be substantially the same as the energy intensity of the first laser beam L1 as the input of the second attenuator 220.

The first base unit 222 of the second attenuator 220 may support the first plate 221, and the second base unit 224 of the second attenuator 220 may support the second plate 223. The first base unit 222 of the second attenuator 220 may fix the first plate 221 such that the first plate 221 is spaced apart from the first laser beam L1, and the second base unit 224 of the second attenuator 220 may fix the second plate 223 such that the second plate 223 is spaced apart from the first laser beam L1.

Fig. 6 is a view showing an embodiment of an output of the laser crystallization apparatus. Here, the laser crystallization apparatus 10 (refer to fig. 1) of fig. 6 may include the first to sixth attenuators 210 to 260 shown in fig. 3 to 5.

Referring to fig. 6, the plurality of laser generators 100 may include first to sixth laser generators 110 to 160, and the plurality of attenuators 200 may include first to sixth attenuators 210 to 260.

The first attenuator 210 may attenuate the energy intensity of the first laser beam L1 of the first laser generator 110, and the sixth attenuator 260 may attenuate the energy intensity of the first laser beam L1 of the sixth laser generator 160. Accordingly, each of the first attenuator 210 and the sixth attenuator 260 may output the second laser beam L2a having a reduced energy intensity.

Each of the second attenuator 220 to the fifth attenuator 250 may maintain the energy intensity of the corresponding first laser beam L1. Accordingly, each of the second attenuator 220 to the fifth attenuator 250 can output the second laser beam L2b having the maintained energy intensity.

By overlapping the second laser beams L2 output from the plurality of attenuators 200, the optical module 300 can output a beam L3. The optical module 300 may generate the beam L3 by overlapping the plurality of second laser beams L2a incident from the first attenuator 210 and the sixth attenuator 260 and the plurality of second laser beams L2b incident from the second attenuator 220 to the fifth attenuator 250. Here, in the plurality of second laser beams L2b incident from the second attenuator 220 to the fifth attenuator 250, the energy intensity of each of the P-polarized light and the S-polarized light of the first laser beam L1 can be maintained. Therefore, the laser crystallization apparatus 10 can minimize the asymmetric reflection of the P-polarized light and the S-polarized light of the second laser beam L2 output from the plurality of attenuators 200.

The laser crystallization apparatus 10 includes a first attenuator 210 and a sixth attenuator 260 that attenuate the energy intensity of the first laser beam L1, and second to fifth attenuators 220 to 250 that maintain the energy intensity of the first laser beam L1. By overlapping the third laser beam L3a corresponding to the second laser beam L2a and the third laser beam L3b corresponding to the second laser beam L2b, the beam L3 output from the optical module 300 may be provided. Since the energy intensity of the second laser beam L2b is greater than the energy intensity of the second laser beam L2a, the ratio of the third laser beam L3b in the energy intensity of the line beam L3 may be greater than the ratio of the third laser beam L3a in the energy intensity of the line beam L3. Therefore, the long-axis angular distribution of the line beam L3 can be relatively reduced, and the crystallization margin and the crystallization uniformity of the laser crystallization apparatus 10 can be improved. In an embodiment, for example, the long axis angular distribution of the beam L3 of the laser crystallization apparatus 10 including the first attenuator 210 to the sixth attenuator 260 may be about 51mrad (milliradians), but is not limited thereto.

As a result, the laser crystallization apparatus 10 can form polycrystalline silicon crystal grains having a uniform size, and the thin film transistor including polycrystalline silicon has uniform characteristics, thereby improving the image quality of the display device.

Fig. 7 is a view showing another embodiment of the output of the laser crystallization apparatus. Here, the laser crystallization apparatus 10 (refer to fig. 1) of fig. 7 may include a plurality of seventh attenuators 270 different from the first to sixth attenuators 210 to 260 shown in fig. 6.

Referring to fig. 7, the laser crystallization apparatus 10 may include first to sixth laser generators 110 to 160 and six seventh attenuators 270.

Each of the seventh attenuators 270 may include a first attenuation unit 271 and a second attenuation unit 273. The first and second attenuating units 271 and 273 may be arranged along the traveling direction of the first laser beam L1, and may transmit and reflect the first laser beam L1. The first attenuation unit 271 may be inclined at a predetermined angle with respect to the traveling direction of the first laser beam L1. The first attenuating unit 271 may transmit a portion of the first laser beam L1 and reflect another portion of the first laser beam L1. One surface of the first attenuating unit 271 may be inclined at a predetermined angle with respect to the traveling direction of the first laser beam L1, thereby controlling the transmission amount of the first laser beam L1.

The second attenuation unit 273 may compensate for the path of the laser beam output from the first attenuation unit 271. The second attenuating unit 273 may be inclined at a predetermined angle in a direction opposite to the first attenuating unit 271 with respect to the traveling direction of the first laser beam L1. The inclination of the second attenuation unit 273 may be changed in response to a change in the inclination of the first attenuation unit 271. Accordingly, the second attenuation unit 273 may compensate for the path of the laser beam output from the first attenuation unit 271 so that the second laser beam L2c output from the second attenuation unit 273 may maintain the traveling direction of the first laser beam L1 incident on the first attenuation unit 271.

The optical module 300 may generate the beam L3 by overlapping the second laser beam L2c incident from the seventh attenuator 270. By overlapping the third laser beam L3c, the beam L3 output from the optical module 300 may be provided. Here, the seventh attenuator 270 may reduce each of the P-polarized light and the S-polarized light corresponding to the first laser beam L1. In an embodiment, for example, the long axis angular distribution of the beam L3 of the laser crystallization apparatus 10 including six seventh attenuators 270 may be about 62mrad, but is not limited thereto.

Referring to fig. 6 in addition to fig. 7, the laser crystallization apparatus 10 of fig. 7 may include six seventh attenuators 270, and the laser crystallization apparatus 10 of fig. 6 may include the first attenuator 210 to the sixth attenuator 260. In this case, the long axis angular distribution of the line beam L3 of the laser crystallization apparatus 10 of FIG. 6 may be approximately 51mrad, and the long axis angular distribution of the laser crystallization apparatus 10 of FIG. 7 may be approximately 62 mrad. Accordingly, the laser crystallization apparatus 10 of fig. 6 may include the first attenuator 210 and the sixth attenuator 260 that attenuate the energy intensity of the first laser beam L1 and the second attenuator 220 to the fifth attenuator 250 that maintain the energy intensity of the first laser beam L1, thereby relatively reducing the long-axis angular distribution of the beam L3. The laser crystallization apparatus 10 can form polysilicon crystal grains having a uniform size by improving a crystallization margin and crystallization uniformity.

Fig. 8 is a diagram illustrating an example of distribution of crystallization margins with respect to a long axis angle in a laser crystallization apparatus, and fig. 9 is a diagram illustrating an example of distribution of crystallization uniformity with respect to a long axis angle in a laser crystallization apparatus.

Referring to fig. 8 and 9, the crystallization margin of the laser crystallization apparatus 10 may be determined by the long axis angle distribution of the beam L3. In an embodiment, for example, when the long axis angular distribution of the beam L3 is about 62mrad, the crystallization margin of the laser crystallization apparatus 10 may be about 0 millijoules (mJ). When the long axis angular distribution of the beam L3 is approximately 51mrad, the crystallization margin of the laser crystallization apparatus 10 may be approximately 5 mJ. When the long axis angular distribution of the beam L3 is approximately 40mrad, the crystallization margin of the laser crystallization apparatus 10 may be approximately 7 mJ. Therefore, as the long axis angular distribution of the line beam L3 decreases, the crystallization margin of the laser crystallization apparatus 10 may increase.

Referring to fig. 6 and 7 and fig. 8 and 9, since the long axis angle distribution of the laser crystallization apparatus 10 of fig. 6 is lower than that of the laser crystallization apparatus 10 of fig. 7, the crystallization margin of the laser crystallization apparatus 10 of fig. 6 may be higher than that of the laser crystallization apparatus 10 of fig. 7. Therefore, the crystallization uniformity of the laser crystallization apparatus 10 of fig. 6 may be improved as compared to the crystallization uniformity of the laser crystallization apparatus 10 of fig. 7.

Fig. 10 is a view explaining an embodiment of a long axis angular distribution according to an output of the laser crystallization apparatus, and fig. 11 is a view showing an embodiment of beam divergence according to the output of the laser crystallization apparatus.

Referring to fig. 10 and 11, the laser crystallization apparatus 10 (refer to fig. 1) including the first to sixth attenuators 210 to 260 (refer to fig. 2, 3, and 6) may output a beam L3 to crystallize the amorphous silicon layer disposed on the substrate 20.

By overlapping the third laser beam L3a (refer to fig. 6) corresponding to the second laser beam L2a and the third laser beam L3b (refer to fig. 6) corresponding to the second laser beam L2b, the beam L3 output from the optical module 300 (refer to fig. 2 and 6) can be provided. Since the energy intensity of the second laser beam L2b is greater than the energy intensity of the second laser beam L2a, the ratio of the third laser beam L3b in the energy intensity of the line beam L3 may be greater than the ratio of the third laser beam L3a in the energy intensity of the line beam L3. Here, the long-axis angular distribution of the wiring harness L3 may be an incident angle α with respect to the wiring harness L3 incident on a plurality of points on the substrate 20 including the first point P1 and the second point P2_{Left side of}And alpha_{Right side}The distribution of (c) corresponds to (d). The laser crystallization apparatus 10 can improve the crystallization margin and the crystallization uniformity by reducing the long axis angle distribution of the line beam L3.

By reducing the long axis angular distribution of line beam L3, laser crystallization device 10 may minimize beam divergence for line beam L3. Referring to fig. 6 and 7 and fig. 11, since the long axis angular distribution of the laser crystallization apparatus 10 of fig. 6 is lower than that of the laser crystallization apparatus 10 of fig. 7, the beam divergence of the laser crystallization apparatus 10 of fig. 6 may be lower than that of the laser crystallization apparatus 10 of fig. 7. By minimizing the long axis angular distribution, the laser crystallization apparatus 10 of fig. 6 can minimize the error GE between the diverging beam and the substrate 20.

FIG. 12 is a view showing another embodiment of a laser generator and an attenuator of the laser crystallization apparatus.

Referring to fig. 12, the plurality of laser generators 100 may include first to fourth laser generators 110 to 140, and the plurality of attenuators 200 may include first to fourth attenuators 210 to 240. The first to fourth laser generators 110 to 140 may correspond to the first to fourth attenuators 210 to 240, respectively, and may supply the first laser beam L1 to the first to fourth attenuators 210 to 240, respectively. Each of the first to fourth attenuators 210 to 240 may attenuate or maintain the energy intensity of the first laser beam L1 to supply the second laser beam L2 to the optical module 300 (refer to fig. 1 and 2).

The first attenuator 210 may attenuate the energy intensity of the first laser beam L1 of the first laser generator 110 to supply the second laser beam L2a to the optical module 300. The first attenuator 210 may attenuate the energy intensity of each of the P-polarized light and the S-polarized light of the first laser beam L1 to output a second laser beam L2 a. The energy intensity of the second laser beam L2a may be less than the energy intensity of the first laser beam L1.

The first attenuator 210 may include a first attenuating unit 211 and a second attenuating unit 213. The first and second attenuation units 211 and 213 may be disposed along a traveling direction of the first laser beam L1, and may transmit and reflect the first laser beam L1. The first attenuation unit 211 may be inclined at a predetermined angle with respect to the traveling direction of the first laser beam L1. The first attenuation unit 211 may transmit a portion of the first laser beam L1 and reflect another portion of the first laser beam L1. The transmittance and reflectance of the first attenuating unit 211 may be controlled depending on the incident angle of the first laser beam L1. The output of the first attenuation unit 211 may be supplied to the second attenuation unit 213.

The second attenuation unit 213 may compensate for a path of the laser beam output from the first attenuation unit 211. The second attenuation unit 213 may be inclined at a predetermined angle in a direction opposite to the first attenuation unit 211 with respect to the traveling direction of the first laser beam L1. The tilt of the second damping unit 213 may be changed in response to a change in the tilt of the first damping unit 211. Accordingly, the second attenuation unit 213 may compensate for the path of the laser beam output from the first attenuation unit 211, so that the second laser beam L2a output from the second attenuation unit 213 may maintain the traveling direction of the first laser beam L1 incident on the first attenuation unit 211.

The second attenuator 220 may maintain the energy intensity of the first laser beam L1 of the second laser generator 120 to supply the second laser beam L2b to the optical module 300. The second attenuator 220 may maintain the energy intensity of each of the P-polarized light and the S-polarized light of the first laser beam L1 to output a second laser beam L2 b.

The second attenuator 220 may include a first plate 221 and a second plate 223. The first plate 221 and the second plate 223 may be arranged in parallel along the traveling direction of the first laser beam L1, and may pass the first laser beam L1 as it is. Each of the first plate 221 and the second plate 223 may be spaced apart from the path of the first laser beam L1 by a predetermined distance. The first laser beam L1 may not pass through the first plate 221 and the second plate 223 and may maintain the existing energy intensity. Therefore, the energy intensity of the second laser beam L2b as the output of the second attenuator 220 may be substantially the same as the energy intensity of the first laser beam L1 as the input of the second attenuator 220.

The third attenuator 230 may include a first plate 231 and a second plate 233. The third attenuator 230 differs from the second attenuator 220 only in the corresponding laser generator 100 and may have the same configuration as the second attenuator 220. Accordingly, the third attenuator 230 maintains the energy intensity of the first laser beam L1 of the third laser generator 130 to supply the second laser beam L2b to the optical module 300. The energy intensity of the second laser beam L2b, which is the output of the third attenuator 230, may be substantially the same as the energy intensity of the first laser beam L1.

The fourth attenuator 240 may include a first attenuating unit 241 'and a second attenuating unit 243'. The first attenuator 210 and the fourth attenuator 240 differ from each other only in the corresponding laser generator 100, and may have the same configuration as each other. Accordingly, the first and second attenuation units 241 'and 243' of the fourth attenuator 240 may reduce the energy intensity of the first laser beam L1 of the fourth laser generator 140 to supply the second laser beam L2a to the optical module 300. The energy intensity of the second laser beam L2a may be less than the energy intensity of the first laser beam L1.

In an embodiment, for example, when the second laser beam L2a of each of the first and fourth attenuators 210 and 240 is output from the outermost portion of the attenuator 200, each of the first and fourth attenuators 210 and 240 may attenuate the energy intensity of the corresponding first laser beam L1. Further, when the second laser beam L2b of each of the second and third attenuators 220 and 230 is output from a region other than the outermost portion of the attenuator 200, each of the second and third attenuators 220 and 230 may maintain the energy intensity of the corresponding first laser beam L1. Accordingly, each of the first attenuator 210 and the fourth attenuator 240 may output the second laser beam L2a having a reduced energy intensity, and each of the second attenuator 220 and the third attenuator 230 may output the second laser beam L2b having a maintained energy intensity.

Fig. 13 is a view showing another embodiment of the output of the laser crystallization apparatus.

Referring to fig. 13, the plurality of laser generators 100 may include first to fourth laser generators 110 to 140, and the plurality of attenuators 200 may include first to fourth attenuators 210 to 240.

The first attenuator 210 may attenuate the energy intensity of the first laser beam L1 of the first laser generator 110, and the fourth attenuator 240 may attenuate the energy intensity of the first laser beam L1 of the fourth laser generator 140. Accordingly, each of the first attenuator 210 and the fourth attenuator 240 may output the second laser beam L2a having a reduced energy intensity.

Each of the second attenuator 220 and the third attenuator 230 may maintain the energy intensity of the corresponding first laser beam L1. Accordingly, each of the second attenuator 220 and the third attenuator 230 can output the second laser beam L2b having the maintained energy intensity.

By overlapping the second laser beams L2 output from the plurality of attenuators 200, the optical module 300 can output a beam L3. The optical module 300 may generate the beam L3 by overlapping the plurality of second laser beams L2a incident from the first and fourth attenuators 210 and 240 and the plurality of second laser beams L2b incident from the second and third attenuators 220 and 230. Here, in the plurality of second laser beams L2b incident from the second attenuator 220 and the third attenuator 230, the energy intensity of each of the P-polarized light and the S-polarized light of the first laser beam L1 can be maintained. Therefore, the laser crystallization apparatus 10 can minimize the asymmetric reflection of the P-polarized light and the S-polarized light of the second laser beam L2 output from the plurality of attenuators 200.

The laser crystallization apparatus 10 includes a first attenuator 210 and a fourth attenuator 240 that attenuate the energy intensity of the first laser beam L1, and a second attenuator 220 and a third attenuator 230 that maintain the energy intensity of the first laser beam L1. By overlapping the third laser beam L3a corresponding to the second laser beam L2a and the third laser beam L3b corresponding to the second laser beam L2b, the beam L3 output from the optical module 300 may be provided. Since the energy intensity of the second laser beam L2b is greater than the energy intensity of the second laser beam L2a, the ratio of the third laser beam L3b in the energy intensity of the line beam L3 may be greater than the ratio of the third laser beam L3a in the energy intensity of the line beam L3. Therefore, the long-axis angular distribution of the line beam L3 can be relatively reduced, and the crystallization margin and the crystallization uniformity of the laser crystallization apparatus 10 can be improved.

As a result, the laser crystallization apparatus 10 can form polycrystalline silicon crystal grains having a uniform size, and the thin film transistor including polycrystalline silicon has uniform characteristics, thereby improving the image quality of the display device.

Fig. 14 is a view showing another embodiment of the output of the laser crystallization apparatus. Here, the laser crystallization apparatus 10 (refer to fig. 1) of fig. 14 may include a plurality of seventh attenuators 270 different from the first attenuator 210 to the fourth attenuator 240 shown in fig. 13.

Referring to fig. 14, the laser crystallization apparatus 10 may include first to fourth laser generators 110 to 140 and four seventh attenuators 270.

Each of the seventh attenuators 270 may include a first attenuation unit 271 and a second attenuation unit 273. The first and second attenuating units 271 and 273 may be arranged along the traveling direction of the first laser beam L1, and may transmit and reflect the first laser beam L1. The first attenuation unit 271 may be inclined at a predetermined angle with respect to the traveling direction of the first laser beam L1. The first attenuating unit 271 may transmit a portion of the first laser beam L1 and reflect another portion of the first laser beam L1. One surface of the first attenuating unit 271 may be inclined at a predetermined angle with respect to the traveling direction of the first laser beam L1, thereby controlling the transmission amount of the first laser beam L1.

The second attenuation unit 273 may compensate for the path of the laser beam output from the first attenuation unit 271. The second attenuating unit 273 may be inclined at a predetermined angle in a direction opposite to the first attenuating unit 271 with respect to the traveling direction of the first laser beam L1. The inclination of the second attenuation unit 273 may be changed in response to a change in the inclination of the first attenuation unit 271. Accordingly, the second attenuation unit 273 may compensate for the path of the laser beam output from the first attenuation unit 271 so that the second laser beam L2c output from the second attenuation unit 273 may maintain the traveling direction of the first laser beam L1 incident on the first attenuation unit 271.

The optical module 300 may generate the beam L3 by overlapping the second laser beams L2c incident from the four seventh attenuators 270. By overlapping the third laser beam L3c, the beam L3 output from the optical module 300 may be provided. Here, the seventh attenuator 270 may reduce each of the P-polarized light and the S-polarized light corresponding to the first laser beam L1.

Referring to fig. 13 and 14, the laser crystallization apparatus 10 of fig. 14 may include four seventh attenuators 270, and the laser crystallization apparatus 10 of fig. 13 may include the first to fourth attenuators 210 to 240. In this case, the long axis angle distribution LAAD1 of the line beam L3 of the laser crystallization apparatus 10 of FIG. 13 may be smaller than the long axis angle distribution LAAD2 of the laser crystallization apparatus 10 of FIG. 14. Accordingly, the laser crystallization apparatus 10 of fig. 13 may include the first attenuator 210 and the fourth attenuator 240 that attenuate the energy intensity of the first laser beam L1 and the second attenuator 220 and the third attenuator 230 that maintain the energy intensity of the first laser beam L1, thereby relatively reducing the long-axis angular distribution LAAD1 of the beam L3. The laser crystallization apparatus 10 can form polysilicon crystal grains having a uniform size by improving a crystallization margin and crystallization uniformity.

FIG. 15 is a view showing another embodiment of a laser generator and an attenuator of the laser crystallization apparatus.

Referring to fig. 15, the plurality of laser generators 100 may include a first laser generator 110 and a second laser generator 120, and the plurality of attenuators 200 may include a first attenuator 210 and a second attenuator 220. The first and second laser generators 110 and 120 may correspond to the first and second attenuators 210 and 220, respectively, and may supply the first laser beam L1 to the first and second attenuators 210 and 220, respectively. Each of the first attenuator 210 and the second attenuator 220 may attenuate or maintain the energy intensity of the first laser beam L1 to supply the second laser beam L2 to the optical module 300 (refer to fig. 1 and 2).

The first attenuator 210 may attenuate the energy intensity of the first laser beam L1 of the first laser generator 110 to supply the second laser beam L2a to the optical module 300. The first attenuator 210 may attenuate the energy intensity of each of the P-polarized light and the S-polarized light of the first laser beam L1 to output a second laser beam L2 a. The energy intensity of the second laser beam L2a may be less than the energy intensity of the first laser beam L1.

The first attenuator 210 may include a first attenuating unit 211 and a second attenuating unit 213. The first and second attenuation units 211 and 213 may be disposed along a traveling direction of the first laser beam L1, and may transmit and reflect the first laser beam L1. The first attenuation unit 211 may be inclined at a predetermined angle with respect to the traveling direction of the first laser beam L1. The first attenuation unit 211 may transmit a portion of the first laser beam L1 and reflect another portion of the first laser beam L1. The transmittance and reflectance of the first attenuating unit 211 may be controlled depending on the incident angle of the first laser beam L1. The output of the first attenuation unit 211 may be supplied to the second attenuation unit 213.

The second attenuation unit 213 may compensate for a path of the laser beam output from the first attenuation unit 211. The second attenuation unit 213 may be inclined at a predetermined angle in a direction opposite to the first attenuation unit 211 with respect to the traveling direction of the first laser beam L1. The tilt of the second damping unit 213 may be changed in response to a change in the tilt of the first damping unit 211. Accordingly, the second attenuation unit 213 may compensate for the path of the laser beam output from the first attenuation unit 211, so that the second laser beam L2a output from the second attenuation unit 213 may maintain the traveling direction of the first laser beam L1 incident on the first attenuation unit 211.

The second attenuator 220 may maintain the energy intensity of the first laser beam L1 of the second laser generator 120 to supply the second laser beam L2b to the optical module 300. The second attenuator 220 may maintain the energy intensity of each of the P-polarized light and the S-polarized light of the first laser beam L1 to output a second laser beam L2 b.

The second attenuator 220 may include a first plate 221 and a second plate 223. The first plate 221 and the second plate 223 may be arranged in parallel along the traveling direction of the first laser beam L1, and may pass the first laser beam L1 as it is. Each of the first plate 221 and the second plate 223 may be spaced apart from the path of the first laser beam L1 by a predetermined distance. The first laser beam L1 may not pass through the first plate 221 and the second plate 223 and may maintain the existing energy intensity. Therefore, the energy intensity of the second laser beam L2b as the output of the second attenuator 220 may be substantially the same as the energy intensity of the first laser beam L1 as the input of the second attenuator 220.

In an embodiment, for example, first attenuator 210 may attenuate the energy intensity corresponding to first laser beam L1, and second attenuator 220 may maintain the energy intensity corresponding to first laser beam L1. Accordingly, first attenuator 210 may output second laser beam L2a having a reduced energy intensity, and second attenuator 220 may output second laser beam L2b having a maintained energy intensity.

Fig. 16 is a view showing another embodiment of the output of the laser crystallization apparatus.

Referring to fig. 16, the plurality of laser generators 100 may include a first laser generator 110 and a second laser generator 120, and the plurality of attenuators 200 may include a first attenuator 210 and a second attenuator 220.

The first attenuator 210 may attenuate the energy intensity of the first laser beam L1 of the first laser generator 110. Accordingly, the first attenuator 210 can output the second laser beam L2a having a reduced energy intensity.

The second attenuator 220 may maintain the energy intensity corresponding to the first laser beam L1. Accordingly, the second attenuator 220 can output the second laser beam L2b with the maintained energy intensity.

By overlapping the second laser beams L2 output from the plurality of attenuators 200, the optical module 300 can output a beam L3. The optical module 300 may generate the beam L3 by overlapping the second laser beam L2a incident from the first attenuator 210 and the second laser beam L2b incident from the second attenuator 220. Here, in the second laser beam L2b incident from the second attenuator 220, the energy intensity of each of the P-polarized light and the S-polarized light of the first laser beam L1 can be maintained. Therefore, the laser crystallization apparatus 10 can minimize the asymmetric reflection of the P-polarized light and the S-polarized light of the second laser beam L2 output from the plurality of attenuators 200.

The laser crystallization apparatus 10 includes a first attenuator 210 that attenuates the energy intensity of the first laser beam L1 and a second attenuator 220 that maintains the energy intensity of the first laser beam L1. By overlapping the third laser beam L3a corresponding to the second laser beam L2a and the third laser beam L3b corresponding to the second laser beam L2b, the beam L3 output from the optical module 300 may be provided. Since the energy intensity of the second laser beam L2b is greater than the energy intensity of the second laser beam L2a, the ratio of the third laser beam L3b in the energy intensity of the line beam L3 may be greater than the ratio of the third laser beam L3a in the energy intensity of the line beam L3. Therefore, the long-axis angular distribution LAAD3 of the line beam L3 can be relatively reduced, and the crystallization margin and the crystallization uniformity of the laser crystallization apparatus 10 can be improved.

As a result, the laser crystallization apparatus 10 can form polycrystalline silicon crystal grains having a uniform size, and the thin film transistor including polycrystalline silicon has uniform characteristics, thereby improving the image quality of the display device.

Fig. 17 is a view showing another embodiment of the output of the laser crystallization apparatus. Here, the laser crystallization apparatus 10 (refer to fig. 1) of fig. 17 may include a plurality of seventh attenuators 270 different from the first attenuator 210 and the second attenuator 220 shown in fig. 16.

Referring to fig. 17, the laser crystallization apparatus 10 may include first and second laser generators 110 and 120 and two seventh attenuators 270.

Each of the seventh attenuators 270 may include a first attenuation unit 271 and a second attenuation unit 273. The first and second attenuating units 271 and 273 may be arranged along the traveling direction of the first laser beam L1, and may transmit and reflect the first laser beam L1. The first attenuation unit 271 may be inclined at a predetermined angle with respect to the traveling direction of the first laser beam L1. The first attenuating unit 271 may transmit a portion of the first laser beam L1 and reflect another portion of the first laser beam L1. One surface of the first attenuating unit 271 may be inclined at a predetermined angle with respect to the traveling direction of the first laser beam L1, thereby controlling the transmission amount of the first laser beam L1.

The second attenuation unit 273 may compensate for the path of the laser beam output from the first attenuation unit 271. The second attenuating unit 273 may be inclined at a predetermined angle in a direction opposite to the first attenuating unit 271 with respect to the traveling direction of the first laser beam L1. The inclination of the second attenuation unit 273 may be changed in response to a change in the inclination of the first attenuation unit 271. Accordingly, the second attenuation unit 273 may compensate for the path of the laser beam output from the first attenuation unit 271 so that the second laser beam L2c output from the second attenuation unit 273 may maintain the traveling direction of the first laser beam L1 incident on the first attenuation unit 271.

The optical module 300 may generate the beam L3 by overlapping the second laser beams L2c incident from the two seventh attenuators 270. By overlapping the third laser beam L3c, the beam L3 output from the optical module 300 may be provided. Here, the seventh attenuator 270 may reduce each of the P-polarized light and the S-polarized light corresponding to the first laser beam L1.

Referring to FIG. 16 in addition to FIG. 17, the laser crystallization apparatus 10 of FIG. 17 may include two seventh attenuators 270, and the laser crystallization apparatus 10 of FIG. 16 may include a first attenuator 210 and a second attenuator 220. In this case, the long axis angle distribution LAAD3 of the line beam L3 of the laser crystallization apparatus 10 of FIG. 16 may be smaller than the long axis angle distribution LAAD4 of the laser crystallization apparatus 10 of FIG. 17. Accordingly, the laser crystallization apparatus 10 of fig. 16 may include the first attenuator 210 attenuating the energy intensity of the first laser beam L1 and the second attenuator 220 maintaining the energy intensity of the first laser beam L1, thereby relatively reducing the long-axis angle distribution LAAD3 of the beam L3. The laser crystallization apparatus 10 can form polysilicon crystal grains having a uniform size by improving a crystallization margin and crystallization uniformity.

FIG. 18 is a flow chart illustrating an embodiment of a laser crystallization process of a laser crystallization apparatus.

Referring to fig. 1 to 4 and 18, the laser crystallization apparatus 10 may initially monitor the energy of the beam L3 (operation S110). In an embodiment, for example, laser crystallization apparatus 10 may sequentially adjust the energy intensity of beam L3 according to a plurality of operations.

Some attenuators 200 of the plurality of attenuators 200 may attenuate the energy intensity corresponding to the first laser beam L1, and other attenuators 200 of the plurality of attenuators 200 may maintain the energy intensity corresponding to the first laser beam L1. In an embodiment, for example, for each operation, when the second laser beam L2a of each of the first attenuator 210 and the sixth attenuator 260 is output from the outermost portion of the attenuator 200, each of the first attenuator 210 and the sixth attenuator 260 may attenuate the energy intensity of the corresponding first laser beam L1. Further, when the second laser beam L2b of each of the second to fifth attenuators 220 to 250 is output in a region other than the outermost portion of the attenuator 200, each of the second to fifth attenuators 220 to 250 may maintain the energy intensity of the corresponding first laser beam L1 (operation S120). Each of the first attenuator 210 and the sixth attenuator 260 may adjust the tilt of the first attenuation units 211 and 261 and the second attenuation units 213 and 263 by the control unit 290, thereby adjusting the energy intensity of the wire harness L3.

The laser crystallization apparatus 10 may select an optimal energy portion of the line beam L3 through substrate inspection according to a plurality of operations (operation S130). Laser crystallization apparatus 10 may determine the settings of a plurality of attenuators 200 corresponding to the optimal energy fraction.

The laser crystallization apparatus 10 may perform crystallization inspection of the amorphous silicon on the substrate 20 based on the selected setting of the attenuator 200 (operation S140).

The laser crystallization apparatus 10 may further correct the energy intensity of the beam L3 by adjusting the setting of each of the first attenuator 210 and the sixth attenuator 260 (operation S150).

According to the laser crystallization apparatus of the embodiment, some attenuators (laser energy adjusting elements) that attenuate the energy intensity of the laser beam and other attenuators (laser energy adjusting elements) that maintain the energy intensity of the laser beam may be provided, thereby relatively reducing the long-axis angular distribution of the beam. Accordingly, the laser crystallization apparatus can improve the crystallization margin and the crystallization uniformity, and can form polycrystalline silicon crystal grains having a uniform size. As a result, the laser crystallization apparatus may form polycrystalline silicon crystal grains having a uniform size, and the thin film transistor including polycrystalline silicon may have uniform characteristics, thereby improving image quality of the display device.

Although the preferred embodiments of the present invention have been disclosed for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible.