阅读说明：本技术 一种igzo薄膜蚀刻液 (IGZO (indium gallium zinc oxide) film etching solution ) 是由 胡涛 邢攸美 李盈盈 王小眉 方伟华 尹云舰 施珂 于 2020-05-06 设计创作，主要内容包括：本发明是一种IGZO薄膜蚀刻液,由如下重量百分比计的原料制成：2～5wt%的草酸、0.1～1wt%的蚀刻速率稳定剂、1～3wt%的水分挥发抑制剂、0.01-1wt%的表面活性剂、余量为水,本发明中蚀刻液成分简单,工艺简单,性质稳定,容易储存,蚀刻速率适中,蚀刻均一性好,精度高。(The invention relates to an IGZO film etching solution which is prepared from the following raw materials in percentage by weight: 2-5 wt% of oxalic acid, 0.1-1 wt% of etching rate stabilizer, 1-3 wt% of water volatilization inhibitor, 0.01-1wt% of surfactant and the balance of water.)

1. The IGZO film etching solution is characterized by being prepared from the following raw materials in percentage by weight:

2-5 wt% of oxalic acid, 0.1-1 wt% of an etching rate stabilizer, 1-3 wt% of a water volatilization inhibitor, 0.01-1wt% of a surfactant and the balance of water.

2. The IGZO thin film etching solution of claim 1, wherein the etching rate stabilizer is a phosphate, and the phosphate is any one of dipotassium hydrogen phosphate, disodium hydrogen phosphate, sodium dihydrogen phosphate and potassium dihydrogen phosphate.

3. The IGZO thin film etching solution of claim 1, wherein the moisture volatilization inhibitor is a compound mixture of a long carbon chain fatty alcohol and a short carbon chain fatty alcohol.

4. The IGZO thin film etching solution of claim 3, wherein the long carbon chain aliphatic alcohol is any one of hexadecanol, heptadecanol and octadecanol; the short carbon chain fatty alcohol is any one of ethanol, n-propanol, isopropanol, and n-butanol.

5. The IGZO thin film etching solution as claimed in claim 3, wherein the mass ratio of the long-carbon-chain fatty alcohol to the short-carbon-chain fatty alcohol is 0.1-5: 1.

6. the IGZO thin film etching solution as claimed in claim 5, wherein the mass ratio of the long-carbon-chain fatty alcohol to the short-carbon-chain fatty alcohol is 0.3-3: 1.

7. the IGZO thin film etching solution as claimed in claim 1, wherein the surfactant is fatty alcohol-polyoxyethylene ether.

8. The IGZO thin film etching solution as claimed in claim 7, wherein the molecular formula of the fatty alcohol-polyoxyethylene ether is R-O- (CH)₂CH₂O)_nH, wherein R = C12, n = 10.

9. The IGZO thin film etching solution as claimed in claim 1, wherein the oxalic acid is 3-4 wt%.

10. The IGZO thin film etching solution according to any one of claims 1 to 9, wherein the IGZO thin film etching solution preparation method comprises the following steps;

(1) preparing oxalic acid and water into a required oxalic acid solution according to a preset amount of oxalic acid and water, and putting the oxalic acid solution into a prepared container for later use;

(2) adding the oxalic acid solution prepared in the step (1) into a mixing kettle;

(3) placing the mixing kettle in the step (2) in a stirring environment, adding a preset etching rate stabilizer, a moisture volatilization inhibitor, a surfactant and the balance water into the mixing kettle according to a certain proportion, and keeping circulation for more than 3 hours;

(4) and (4) taking the mixed liquid prepared in the step (3), and filtering the mixed liquid through a filter to obtain the required IGZO thin film etching liquid.

Technical Field

The invention relates to the field of etching in the panel display industry, in particular to an IGZO (indium gallium zinc oxide) film etching solution.

Background

With the development of display technology, liquid crystal display panels gradually develop towards large size and high resolution, which means that the charging time of pixels is shorter and shorter, which puts higher requirements on active layers of Thin Film Transistors (TFTs), IGZO is an amorphous oxide containing indium, gallium and zinc, which is a channel layer material used in the technology of the new generation of TFTs, the carrier mobility is 20-30 times of amorphous silicon, the charging and discharging rate of the TFTs to pixel electrodes can be greatly improved, the response speed of the pixels is improved, the faster refresh rate is realized, the faster response also greatly improves the line scanning rate of the pixels, so that the ultrahigh resolution is possible in TFT-LCD (thin film transistor liquid crystal display), in addition, the IGZO has higher energy efficiency level due to the reduction of the number of transistors and the improvement of the light transmittance of each pixel, the efficiency is higher, the power consumption of the display screen can be close to that of an OLED (organic light emitting diode display) by utilizing an IGZO technology, but the cost is lower, the thickness is 25% higher than that of the OLED, the resolution can reach full high Definition (full HD) level or even Ultra high Definition (Ultra Definition) level, meanwhile, the IGZO can be produced by utilizing the existing amorphous silicon production line, only slight modification is needed, and therefore the cost is more competitive with low-temperature polycrystalline silicon, therefore, in the future TFT-LCD panel, the IGZO share is larger and larger, in the process of producing an IGZO thin film, a required pattern needs to be formed by etching, and therefore, the development of a high-fine IGZO etching solution has good market prospect;

in the prior art, patent CN103980905A discloses an etching solution for an oxide material system, which comprises an oxide etching solution, a modifier for adjusting consistency and water, and can be generally applied to etching of Sn, Zn, Al, Ga, In base and alloy oxide thin film materials thereof, but the etching solution has a complex formula, a complex process and high cost;

patent CN 107564809 a discloses an etching solution for an IGZO film layer and an etching method thereof, wherein the etching solution for the IGZO film layer contains acid, phosphate, hydrogen peroxide and water, and the pH value of the etching solution is not more than 5, so that the etching rate can be effectively controlled, the etching rate is uniform, the IGZO film layer can be stably etched, and impurities affecting the electrical property of the IGZO film layer cannot be introduced, but the formula contains hydrogen peroxide, which is unstable and may react with organic acid such as oxalic acid in the formula, so that the etching solution fails;

patent CN 109439329 a discloses a novel IGZO etching solution for flat panel display array process, which comprises 1-10% of sulfuric acid, 0.5-10% of nitric acid, 0.5-10% of acetic acid, 0.1-0.6% of fluoride, 5-1000 ppm of surfactant and the balance of ultrapure water, and has good etching effect on novel corrosion-resistant IGZO material, high etching rate, small side etching amount, and no etching residue, however, the formula contains fluoride, and F may diffuse into the IGZO film layer, and may need to be additionally added with a F removal treatment process, and meanwhile, the fluorine-containing formula may corrode the lower film layer, resulting in reduction of yield and efficiency, and in addition, the fluorine-containing waste liquid is difficult to treat, resulting in increase of the cost for subsequent wastewater treatment.

Disclosure of Invention

Aiming at the problems in the prior art, the invention provides the IGZO thin film etching solution which is simple in components, simple in process, stable in property, easy to store, moderate in etching rate, good in etching uniformity and high in precision.

In order to achieve the purpose, the invention is realized by the following technical scheme: an IGZO film etching solution is prepared from the following raw materials in percentage by weight:

2-5 wt% of oxalic acid, 0.1-1 wt% of an etching rate stabilizer, 1-3 wt% of a water volatilization inhibitor, 0.01-1wt% of a surfactant and the balance of water.

Preferably, the etching rate stabilizer is phosphate, the phosphate is any one of dipotassium hydrogen phosphate, disodium hydrogen phosphate, sodium dihydrogen phosphate and potassium dihydrogen phosphate, and the phosphate is used as the etching rate stabilizer to facilitate control of the stability of the etching rate, so that the fluctuation of the etching rate is small in the using process, and the etching precision is improved.

Preferably, the water volatilization inhibitor is a compound mixture of long-carbon-chain fatty alcohol and short-carbon-chain fatty alcohol, so that the volatilization of water in the use process of the etching solution is reduced, the concentration fluctuation of the etching solution is kept small, the etching precision is improved, the oxalic acid crystallization is prevented from being separated out, and the practical service life of the etching solution is prolonged.

Preferably, the long-carbon-chain fatty alcohol is any one of hexadecanol, heptadecanol and octadecanol; the short carbon chain fatty alcohol is any one of ethanol, n-propanol, isopropanol and n-butanol.

Preferably, the mass ratio of the long-carbon-chain fatty alcohol to the short-carbon-chain fatty alcohol is 0.1-5: 1.

preferably, the mass ratio of the long-carbon-chain fatty alcohol to the short-carbon-chain fatty alcohol is 0.3-3: 1.

preferably, the surfactant is fatty alcohol-polyoxyethylene ether, which is beneficial to reducing the viscosity of the etching solution, increasing the surface wettability of the film layer, enhancing the etching uniformity of the etching solution and improving the etching precision; and the surfactant and the water volatilization inhibitor have synergistic effect, so that the water volatilization can be better reduced.

Preferably, the molecular formula of the fatty alcohol-polyoxyethylene ether is R-O- (CH)₂CH₂O)_nH, wherein R = C12, n =10, and fatty alcohol polyoxyethylene ether is used as a nonionic surfactant, so that the influence of phosphate can be effectively avoided, and the stability is better.

Preferably, the weight percentage of the oxalic acid is 3-4 wt%, the oxalic acid is the optimal concentration of the oxalic acid, and the low concentration of the oxalic acid can cause the low etching rate and the long etching time; and if the concentration is too high, the etching rate is too high and is difficult to control, and in addition, oxalic acid may be crystallized and separated out due to water volatilization in the etching process, which is not favorable for maintaining the stability of the concentration of the oxalic acid and the uniformity of etching.

Preferably, the preparation method of the IGZO thin film etching solution comprises the following steps;

(1) preparing oxalic acid and water into a required oxalic acid solution according to a preset amount of oxalic acid and water, and putting the oxalic acid solution into a prepared container for later use;

(2) adding the oxalic acid solution prepared in the step (1) into a mixing kettle;

(3) placing the mixing kettle in the step (2) in a stirring environment, adding a preset etching rate stabilizer, a moisture volatilization inhibitor, a surfactant and the balance water into the mixing kettle according to a certain proportion, and keeping circulation for more than 3 hours;

(4) and (4) taking the mixed liquid prepared in the step (3), and filtering the mixed liquid by using a mixed liquid filter to obtain the required IGZO film etching liquid.

Has the advantages that: the IGZO thin film etching solution prepared by the method;

1. the etching solution has the advantages of simple components, simple process, stable property, easy storage, moderate etching rate, good etching uniformity and high precision.

2. According to the invention, phosphate is used as an additive, so that the stability of the etching rate is favorably controlled, and the etching precision can be effectively improved.

3. According to the invention, the long-carbon-chain fatty alcohol and short-carbon-chain fatty alcohol compound mixture is used as a water volatilization inhibitor, so that the concentration fluctuation of the etching solution can be effectively reduced, the etching precision can be effectively improved, the oxalic acid can be prevented from being crystallized and separated out, and the service life of the etching solution is prolonged.

4. The fatty alcohol-polyoxyethylene ether nonionic surfactant is used as the surfactant, so that the viscosity of the etching solution is favorably reduced, the surface wettability of the film layer can be increased, the etching uniformity of the etching solution is enhanced, the etching precision is improved, the surfactant is not easy to bubble and biodegrade and is more environment-friendly, and the surfactant and the moisture volatilization inhibitor have a synergistic effect and are favorable for better reducing the moisture volatilization.

Detailed Description

The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.

Example 1

The IGZO film etching solution is prepared from the following raw materials in percentage by weight:

2.5wt% of oxalic acid, 1.0wt% of etching rate stabilizer, 1.0wt% of water volatilization inhibitor, 0.3wt% of surfactant and the balance of water, wherein the etching rate stabilizer is potassium dihydrogen phosphate, the long-carbon-chain fatty alcohol in the water volatilization agent is cetyl alcohol, the short-carbon-chain fatty alcohol in the water volatilization agent is ethanol, and the ratio of the cetyl alcohol to the ethanol is 0.16: 1;

(1) preparing oxalic acid and water into a required oxalic acid solution according to a preset amount of oxalic acid and water, and putting the oxalic acid solution into a prepared container for later use;

(2) adding the oxalic acid solution prepared in the step (1) into a mixing kettle;

(3) placing the mixing kettle in the step (2) in a stirring environment, adding a preset etching rate stabilizer, a moisture volatilization inhibitor, a surfactant and the balance water into the mixing kettle according to a certain proportion, and keeping circulation for more than 3 hours;

(4) taking the mixed liquid prepared in the step (3), and filtering the mixed liquid by using a mixed liquid filter to obtain the required IGZO film etching liquid;

etching the IGZO film glass sheet to be processed and etched at 40 ℃ by using the prepared etching solution, soaking for 120s, washing the glass sheet by using high-purity water and drying by using high-purity nitrogen after the etching is finished, and measuring the etching rate, the contact angle and the etching result in the etching process.

Example 2

The IGZO film etching solution is prepared from the following raw materials in percentage by weight:

3.0wt% of oxalic acid, 0.5wt% of an etching rate stabilizer, 3.0wt% of a water volatilization inhibitor, 0.1wt% of a surfactant and the balance of water, wherein the etching rate stabilizer is sodium dihydrogen phosphate, the long-carbon-chain fatty alcohol in the water volatilizing agent is heptadecanol, the short-carbon-chain fatty alcohol in the water volatilizing agent is n-butyl alcohol, and the ratio of the heptadecanol to the n-butyl alcohol is 3: 1;

(1) preparing oxalic acid and water into a required oxalic acid solution according to a preset amount of oxalic acid and water, and putting the oxalic acid solution into a prepared container for later use;

(2) adding the oxalic acid solution prepared in the step (1) into a mixing kettle;

(3) placing the mixing kettle in the step (2) in a stirring environment, adding a preset etching rate stabilizer, a moisture volatilization inhibitor, a surfactant and the balance water into the mixing kettle according to a certain proportion, and keeping circulation for more than 3 hours;

(4) taking the mixed liquid prepared in the step (3), and filtering the mixed liquid by using a mixed liquid filter to obtain the required IGZO film etching liquid;

etching the IGZO film glass sheet to be processed and etched at 40 ℃ by using the prepared etching solution, soaking for 120s, washing the glass sheet by using high-purity water and drying by using high-purity nitrogen after the etching is finished, and measuring the etching rate, the contact angle and the etching result in the etching process.

Example 3

The IGZO film etching solution is prepared from the following raw materials in percentage by weight:

5.0wt% of oxalic acid, 0.2wt% of etching rate stabilizer, 2.1wt% of water volatilization inhibitor, 1.0wt% of surfactant and the balance of water, wherein the etching rate stabilizer is dipotassium hydrogen phosphate, the long-carbon-chain fatty alcohol in the water volatilization agent is octadecanol, the short-carbon-chain fatty alcohol in the water volatilization agent is isopropanol, and the ratio of the octadecanol to the isopropanol is 0.1: 1;

(1) preparing oxalic acid and water into a required oxalic acid solution according to a preset amount of oxalic acid and water, and putting the oxalic acid solution into a prepared container for later use;

(2) adding the oxalic acid solution prepared in the step (1) into a mixing kettle;

(3) placing the mixing kettle in the step (2) in a stirring environment, adding a preset etching rate stabilizer, a moisture volatilization inhibitor, a surfactant and the balance water into the mixing kettle according to a certain proportion, and keeping circulation for more than 3 hours;

(4) taking the mixed liquid prepared in the step (3), and filtering the mixed liquid by using a mixed liquid filter to obtain the required IGZO film etching liquid;

etching the IGZO film glass sheet to be processed and etched at 40 ℃ by using the prepared etching solution, soaking for 120s, washing the glass sheet by using high-purity water and drying by using high-purity nitrogen after the etching is finished, and measuring the etching rate, the contact angle and the etching result in the etching process.

Example 4

The IGZO film etching solution is prepared from the following raw materials in percentage by weight:

2.0wt% of oxalic acid, 0.1wt% of etching rate stabilizer, 2.5wt% of water volatilization inhibitor, 0.01wt% of surfactant and the balance of water, wherein the etching rate stabilizer is disodium hydrogen phosphate, the long-carbon-chain fatty alcohol in the water volatilizing agent is cetyl alcohol, the short-carbon-chain fatty alcohol in the water volatilizing agent is n-propanol, and the ratio of the cetyl alcohol to the n-propanol is 5: 1;

(1) preparing oxalic acid and water into a required oxalic acid solution according to a preset amount of oxalic acid and water, and putting the oxalic acid solution into a prepared container for later use;

(2) adding the oxalic acid solution prepared in the step (1) into a mixing kettle;

(3) placing the mixing kettle in the step (2) in a stirring environment, adding a preset etching rate stabilizer, a moisture volatilization inhibitor, a surfactant and the balance water into the mixing kettle according to a certain proportion, and keeping circulation for more than 3 hours;

(4) taking the mixed liquid prepared in the step (3), and filtering the mixed liquid by using a mixed liquid filter to obtain the required IGZO film etching liquid;

etching the IGZO film glass sheet to be processed and etched at 40 ℃ by using the prepared etching solution, soaking for 120s, washing the glass sheet by using high-purity water and drying by using high-purity nitrogen after the etching is finished, and measuring the etching rate, the contact angle and the etching result in the etching process.

Example 5

The IGZO film etching solution is prepared from the following raw materials in percentage by weight:

3.2wt% of oxalic acid, 0.4wt% of etching rate stabilizer, 2.1wt% of water volatilization inhibitor, 0.7wt% of surfactant and the balance of water, wherein the etching rate stabilizer is dipotassium hydrogen phosphate, the long-carbon-chain fatty alcohol in the water volatilizing agent is octadecanol, the short-carbon-chain fatty alcohol in the water volatilizing agent is n-butyl alcohol, and the ratio of the octadecanol to the n-butyl alcohol is 4: 1;

(1) preparing oxalic acid and water into a required oxalic acid solution according to a preset amount of oxalic acid and water, and putting the oxalic acid solution into a prepared container for later use;

(2) adding the oxalic acid solution prepared in the step (1) into a mixing kettle;

(3) placing the mixing kettle in the step (2) in a stirring environment, adding a preset etching rate stabilizer, a moisture volatilization inhibitor, a surfactant and the balance water into the mixing kettle according to a certain proportion, and keeping circulation for more than 3 hours;

(4) taking the mixed liquid prepared in the step (3), and filtering the mixed liquid by using a mixed liquid filter to obtain the required IGZO film etching liquid;

etching the IGZO film glass sheet to be processed and etched at 40 ℃ by using the prepared etching solution, soaking for 120s, washing the glass sheet by using high-purity water and drying by using high-purity nitrogen after the etching is finished, and measuring the etching rate, the contact angle and the etching result in the etching process.

Example 6

The IGZO film etching solution is prepared from the following raw materials in percentage by weight:

3.6wt% of oxalic acid, 0.7wt% of etching rate stabilizer, 2.0wt% of water volatilization inhibitor, 0.5wt% of surfactant and the balance of water, wherein the etching rate stabilizer is disodium hydrogen phosphate, the long-carbon-chain fatty alcohol in the water volatilizing agent is cetyl alcohol, the short-carbon-chain fatty alcohol in the water volatilizing agent is n-butyl alcohol, and the ratio of the cetyl alcohol to the n-butyl alcohol is 3: 1;

(1) preparing oxalic acid and water into a required oxalic acid solution according to a preset amount of oxalic acid and water, and putting the oxalic acid solution into a prepared container for later use;

(2) adding the oxalic acid solution prepared in the step (1) into a mixing kettle;

(3) placing the mixing kettle in the step (2) in a stirring environment, adding a preset etching rate stabilizer, a moisture volatilization inhibitor, a surfactant and the balance water into the mixing kettle according to a certain proportion, and keeping circulation for more than 3 hours;

(4) taking the mixed liquid prepared in the step (3), and filtering the mixed liquid by using a mixed liquid filter to obtain the required IGZO film etching liquid;

etching the IGZO film glass sheet to be processed and etched at 40 ℃ by using the prepared etching solution, soaking for 120s, washing the glass sheet by using high-purity water and drying by using high-purity nitrogen after the etching is finished, and measuring the etching rate, the contact angle and the etching result in the etching process.

Comparative example 1

The IGZO film etching solution is prepared from the following raw materials in percentage by weight:

1.0wt% of oxalic acid, 0.7wt% of an etching rate stabilizer, 2.0wt% of a water volatilization inhibitor, 0.5wt% of a surfactant and the balance of water, wherein the etching rate stabilizer is disodium hydrogen phosphate, the long-carbon-chain fatty alcohol in the water volatilizing agent is cetyl alcohol, the short-carbon-chain fatty alcohol in the water volatilizing agent is n-butyl alcohol, and the ratio of the cetyl alcohol to the n-butyl alcohol is 3: 1;

(1) preparing oxalic acid and water into a required oxalic acid solution according to a preset amount of oxalic acid and water, and putting the oxalic acid solution into a prepared container for later use;

(2) adding the oxalic acid solution prepared in the step (1) into a mixing kettle;

(3) placing the mixing kettle in the step (2) in a stirring environment, adding a preset etching rate stabilizer, a moisture volatilization inhibitor, a surfactant and the balance water into the mixing kettle according to a certain proportion, and keeping circulation for more than 3 hours;

(4) taking the mixed liquid prepared in the step (3), and filtering the mixed liquid by using a mixed liquid filter to obtain the required IGZO film etching liquid;

etching the IGZO film glass sheet to be processed and etched at 40 ℃ by using the prepared etching solution, soaking for 120s, washing the glass sheet by using high-purity water and drying by using high-purity nitrogen after the etching is finished, and measuring the etching rate, the contact angle and the etching result in the etching process.

Comparative example 2

The IGZO film etching solution is prepared from the following raw materials in percentage by weight:

3.6wt% of oxalic acid, 2.0wt% of water volatilization inhibitor, 0.5wt% of surfactant and the balance of water, wherein the etching rate stabilizer is disodium hydrogen phosphate, the long-carbon-chain fatty alcohol in the water volatilization agent is cetyl alcohol, the short-carbon-chain fatty alcohol in the water volatilization agent is n-butyl alcohol, and the ratio of the cetyl alcohol to the n-butyl alcohol is 3: 1;

(1) preparing oxalic acid and water into a required oxalic acid solution according to a preset amount of oxalic acid and water, and putting the oxalic acid solution into a prepared container for later use;

(2) adding the oxalic acid solution prepared in the step (1) into a mixing kettle;

(3) placing the mixing kettle in the step (2) in a stirring environment, adding a preset water volatilization inhibitor, a surfactant and the balance water into the mixing kettle according to a certain proportion, and keeping circulation for more than 3 hours;

(4) taking the mixed liquid prepared in the step (3), and filtering the mixed liquid by using a mixed liquid filter to obtain the required IGZO film etching liquid;

etching the IGZO film glass sheet to be processed and etched at 40 ℃ by using the prepared etching solution, soaking for 120s, washing the glass sheet by using high-purity water and drying by using high-purity nitrogen after the etching is finished, and measuring the etching rate, the contact angle and the etching result in the etching process.

Comparative example 3

The IGZO film etching solution is prepared from the following raw materials in percentage by weight:

3.6wt% of oxalic acid, 0.7wt% of etching rate stabilizer, 0.5wt% of surfactant and the balance of water, wherein the etching rate stabilizer is disodium hydrogen phosphate;

(1) preparing oxalic acid and water into a required oxalic acid solution according to a preset amount of oxalic acid and water, and putting the oxalic acid solution into a prepared container for later use;

(2) adding the oxalic acid solution prepared in the step (1) into a mixing kettle;

(3) placing the mixing kettle in the step (2) in a stirring environment, adding a preset etching rate stabilizer, a surfactant and the balance water into the mixing kettle according to a certain proportion, and keeping circulation for more than 3 hours;

(4) taking the mixed liquid prepared in the step (3), and filtering the mixed liquid by using a mixed liquid filter to obtain the required IGZO film etching liquid;

etching the IGZO film glass sheet to be processed and etched at 40 ℃ by using the prepared etching solution, soaking for 120s, washing the glass sheet by using high-purity water and drying by using high-purity nitrogen after the etching is finished, and measuring the etching rate, the contact angle and the etching result in the etching process.

Comparative example 4

The IGZO film etching solution is prepared from the following raw materials in percentage by weight:

3.6wt% of oxalic acid, 0.7wt% of etching rate stabilizer, 2.0wt% of water volatilization inhibitor, 0.5wt% of surfactant and the balance of water, wherein the etching rate stabilizer is disodium hydrogen phosphate, the long-carbon-chain fatty alcohol in the water volatilizing agent is cetyl alcohol, the short-carbon-chain fatty alcohol in the water volatilizing agent is n-butyl alcohol, and the ratio of the cetyl alcohol to the n-butyl alcohol is 0.05: 1;

(1) preparing oxalic acid and water into a required oxalic acid solution according to a preset amount of oxalic acid and water, and putting the oxalic acid solution into a prepared container for later use;

(2) adding the oxalic acid solution prepared in the step (1) into a mixing kettle;

(3) placing the mixing kettle in the step (2) in a stirring environment, adding a preset etching rate stabilizer, a moisture volatilization inhibitor, a surfactant and the balance water into the mixing kettle according to a certain proportion, and keeping circulation for more than 3 hours;

(4) taking the mixed liquid prepared in the step (3), and filtering the mixed liquid by using a mixed liquid filter to obtain the required IGZO film etching liquid;

etching the IGZO film glass sheet to be processed and etched at 40 ℃ by using the prepared etching solution, soaking for 120s, washing the glass sheet by using high-purity water and drying by using high-purity nitrogen after the etching is finished, and measuring the etching rate, the contact angle and the etching result in the etching process.

Comparative example 5

The IGZO film etching solution is prepared from the following raw materials in percentage by weight:

3.6wt% of oxalic acid, 0.7wt% of an etching rate stabilizer, 2.0wt% of a water volatilization inhibitor, 0.5wt% of a surfactant and the balance of water, wherein the etching rate stabilizer is disodium hydrogen phosphate, the long-carbon-chain fatty alcohol in the water volatilizing agent is cetyl alcohol, the short-carbon-chain fatty alcohol in the water volatilizing agent is n-butyl alcohol, and the ratio of the cetyl alcohol to the n-butyl alcohol is 10: 1;

(1) preparing oxalic acid and water into a required oxalic acid solution according to a preset amount of oxalic acid and water, and putting the oxalic acid solution into a prepared container for later use;

(2) adding the oxalic acid solution prepared in the step (1) into a mixing kettle;

(3) placing the mixing kettle in the step (2) in a stirring environment, adding a preset etching rate stabilizer, a moisture volatilization inhibitor, a surfactant and the balance water into the mixing kettle according to a certain proportion, and keeping circulation for more than 3 hours;

(4) taking the mixed liquid prepared in the step (3), and filtering the mixed liquid by using a mixed liquid filter to obtain the required IGZO film etching liquid;

etching the IGZO film glass sheet to be processed and etched at 40 ℃ by using the prepared etching solution, soaking for 120s, washing the glass sheet by using high-purity water and drying by using high-purity nitrogen after the etching is finished, and measuring the etching rate, the contact angle and the etching result in the etching process.

Comparative example 6

The IGZO film etching solution is prepared from the following raw materials in percentage by weight:

3.6wt% of oxalic acid, 0.7wt% of an etching rate stabilizer, 2.0wt% of a water volatilization inhibitor and the balance of water, wherein the etching rate stabilizer is disodium hydrogen phosphate, the long-carbon-chain fatty alcohol in the water volatilizing agent is cetyl alcohol, the short-carbon-chain fatty alcohol in the water volatilizing agent is n-butyl alcohol, and the ratio of the cetyl alcohol to the n-butyl alcohol is 3: 1;

(1) preparing oxalic acid and water into a required oxalic acid solution according to a preset amount of oxalic acid and water, and putting the oxalic acid solution into a prepared container for later use;

(2) adding the oxalic acid solution prepared in the step (1) into a mixing kettle;

(3) placing the mixing kettle in the step (2) in a stirring environment, adding a preset etching rate stabilizer, a moisture volatilization inhibitor and the balance water into the mixing kettle according to a certain proportion, and keeping circulation for more than 3 hours;

(4) taking the mixed liquid prepared in the step (3), and filtering the mixed liquid by using a mixed liquid filter to obtain the required IGZO film etching liquid;

etching the IGZO film glass sheet to be processed and etched at 40 ℃ by using the prepared etching solution, soaking for 120s, washing the glass sheet by using high-purity water and drying by using high-purity nitrogen after the etching is finished, and measuring the etching rate, the contact angle and the etching result in the etching process.

The data of the examples and the comparative examples are shown in table 1, the etching uniformity standard is shown in table 2, and the time rate, the contact angle of the etching solution and the etching result of the examples and the comparative examples are shown in table 3;

TABLE 1

TABLE 2

TABLE 3

In summary, the following components are added by mass percent:

3-4 wt% of oxalic acid, 0.1-1 wt% of an etching rate stabilizer, 1-3 wt% of a water volatilization inhibitor, 0.01-1wt% of a surfactant and the balance of water, wherein the mass ratio of the long-carbon-chain fatty alcohol to the short-carbon-chain fatty alcohol is 0.3-3: the IGZO thin film etching solution prepared by the method 1 has the best effect.

The present invention has been described in detail, and it should be understood that the detailed description and specific examples, while indicating the preferred embodiment of the invention, are intended for purposes of illustration only and are not intended to limit the scope of the invention.