阅读说明：本技术 一种宽光谱偏振光探测器及其制备方法 (Wide-spectrum polarized light detector and preparation method thereof ) 是由 魏钟鸣 王鑫刚 杨珏晗 刘岳阳 刘力源 邓惠雄 文宏玉 王开友 于 2021-08-05 设计创作，主要内容包括：本发明提供一种宽光谱偏振光探测器及其制备方法,宽光谱偏振光探测器包括基底层以及偏振层；基底层具有一成型面；偏振层设于所述成型面上,包括由左至右依次设置的源电极、有源层以及漏电极；其中,有源层为N型二维层状半导体材料磷硫化钯。在本发明提供的技术方案中,有源层为N型二维层状半导体材料磷硫化钯,结构具有各向异性,有利于敏感的偏振光探测；作为N型半导体,其费米能级靠近导带,提高了包括电子从价带到导带的宽能带以及导带内近邻能带的跃迁频率,实现了电子的多通道跃迁,拓宽了光电探测器的光谱探测范围,从日盲区到近红外区。(The invention provides a wide-spectrum polarized light detector and a preparation method thereof, wherein the wide-spectrum polarized light detector comprises a substrate layer and a polarization layer; the base layer has a forming surface; the polarization layer is arranged on the molding surface and comprises a source electrode, an active layer and a drain electrode which are sequentially arranged from left to right; the active layer is made of N-type two-dimensional layered semiconductor material palladium phosphorus sulfide. In the technical scheme provided by the invention, the active layer is an N-type two-dimensional layered semiconductor material palladium phosphorus sulfide, and the structure has anisotropy, so that sensitive polarized light detection is facilitated; as an N-type semiconductor, the Fermi level of the N-type semiconductor is close to a conduction band, the transition frequency of a wide energy band from a valence band to the conduction band and a neighboring energy band in the conduction band of electrons is improved, multi-channel transition of the electrons is realized, the spectrum detection range of the photoelectric detector is widened, and the solar dead zone to the near infrared zone is formed.)

1. A broad spectrum polarized light detector, comprising:

a base layer having a molding surface; and the number of the first and second groups,

the polarization layer is arranged on the molding surface and comprises a source electrode, an active layer and a drain electrode which are sequentially arranged from left to right;

wherein the active layer is N-type two-dimensional layered palladium phosphorus sulfide.

2. The broad spectrum polarization photodetector of claim 1, wherein the source electrode and the drain electrode are both gold.

3. The broad spectrum polarizing photodetector of claim 1, wherein the substrate layer comprises:

a gate electrode; and the number of the first and second groups,

and the insulating layer is not arranged on the end face of the gate electrode, and the end face of the insulating layer, which faces away from the gate electrode, forms the molding surface.

4. The broad spectrum polarizing photodetector of claim 3, wherein the gate electrode comprises a silicon wafer; and/or the presence of a gas in the gas,

the insulating layer includes a silicon dioxide substrate.

5. The broad spectrum polarizing photodetector of claim 1, wherein the active layer has an average thickness of 15 to 25 nm; and/or the presence of a gas in the gas,

the width of the active layer was 5 μm, the height was 21nm, and the length was 9 μm.

6. The broad spectrum polarizing photodetector of claim 1, wherein the source electrode and the drain electrode are each 70nm thick, 120 μm long and 150 μm wide.

7. A method of fabricating a broad spectrum polarized light detector as claimed in any one of claims 1 to 6 comprising:

transferring and forming the active layer on the molding surface by a mechanical stripping method to obtain an initial molding layer;

spin coating a mask material on the initial layer;

etching the mask material to form a source electrode area and a drain electrode area;

depositing to form the source electrode and the drain electrode;

and cleaning and packaging to obtain the wide-spectrum polarized light detector.

8. The method of claim 7, wherein the step of transferring the active layer on the molding surface by mechanical lift-off to form an initial layer comprises:

and transferring the mechanically stripped N-type two-dimensional layered palladium phosphorus sulfide onto the molding surface through polydimethylsiloxane to obtain the active layer.

9. The method of claim 7, wherein the step of etching the mask material to form the source and drain electrode regions comprises:

forming the source electrode region and the drain electrode region on the mask material by an electron beam lithography method.

10. The method of claim 7, wherein the step of cleaning the package to obtain the broadband spectral polarization photodetector comprises:

sequentially cleaning with acetone, ethanol and deionized water to obtain a structure to be packaged;

and packaging the structure to be packaged to obtain the wide-spectrum polarized light detector.

Technical Field

The invention relates to the technical field of photoelectricity, in particular to a wide-spectrum polarized light detector and a preparation method thereof.

Background

New two-dimensional semiconductors play an increasingly important role in modern nanoelectronics and optoelectronics. With the rapid development of science and technology, the requirements on the photoelectric detector are higher and higher, and the common photoelectric detector cannot meet the requirements of people, so that the widening of the spectrum range of the photoelectric detector becomes an important direction.

Since the successful discovery of graphene in 2004, low-dimensional semiconductor polarized light detectors with polarization sensitivity have gradually appeared, and polarized light detection plays an important role in the fields of infrared imaging, environmental monitoring, biological detection and remote sensing detection. However, the detection spectrum of these materials is limited, e.g., to the visible or near infrared region. In the nature, different objects have different polarization states due to different materials and surface information, information carried by reflected light of the different objects has unique polarization states, and after the reflected polarized light irradiates on the two-dimensional semiconductor device, light excites carriers to cause the change of conductivity, so that optical signals in the nature are converted into corresponding electrical signals, and the application of the image sensor is realized. It is therefore an important direction to find materials with broad spectral response and polarization sensitivity and to fabricate them into polarized photodetectors and image sensors.

Disclosure of Invention

The invention mainly aims to provide a wide-spectrum polarized light detector and a preparation method thereof, and aims to solve the problem of detection spectrum range limitation.

To achieve the above object, the present invention provides a broadband spectrum polarized light detector, comprising:

a base layer having a molding surface; and the number of the first and second groups,

the polarization layer is arranged on the molding surface and comprises a source electrode, an active layer and a drain electrode which are sequentially arranged from left to right;

wherein the active layer is N-type two-dimensional layered palladium phosphosulfide.

Optionally, the source electrode and the drain electrode are both made of gold.

Optionally, the base layer comprises:

a gate electrode; and the number of the first and second groups,

and the insulating layer is arranged on the end face of the gate electrode, and the end face of the insulating layer, which is opposite to the gate electrode, forms a molding surface.

Optionally, the gate electrode comprises a silicon wafer; and/or the presence of a gas in the gas,

the insulating layer includes a silicon dioxide substrate.

Optionally, the active layer has an average thickness of 15 to 25 nm; and/or the presence of a gas in the gas,

the active layer had a width of 5 μm, a height of 21nm and a length of 9 μm.

Optionally, the thickness of the source electrode and the drain electrode are both 70nm, the length is 120 μm, and the width is 150 μm.

The invention also provides a preparation method of the broad spectrum polarized light detector, which comprises the following steps:

transferring on a molding surface to obtain an active layer through mechanical stripping to obtain an initial layer;

spin coating a mask material on the initial layer;

etching the mask material to form a source electrode region and a drain electrode region;

depositing to form a source electrode and a drain electrode;

and cleaning and packaging to obtain the broad spectrum polarized light detector.

Optionally, the step of transferring and forming the active layer on the molding surface by mechanical peeling to obtain an initial molding layer includes:

and transferring the mechanically stripped N-type two-dimensional layered palladium phosphorus sulfide onto the molding surface through polydimethylsiloxane to obtain the active layer.

Optionally, the step of etching the mask material to form the source electrode region and the drain electrode region includes:

a source electrode region and a drain electrode region are formed on the mask material by an electron beam lithography method.

Optionally, the step of cleaning and packaging the broad spectrum polarized light detector includes:

sequentially cleaning with acetone, ethanol and deionized water to obtain a structure to be packaged;

and packaging the structure to be packaged to obtain the wide-spectrum polarized light detector.

Optionally, the mask material comprises polymethylmethacrylate.

In the technical scheme provided by the invention, the active layer is an N-type two-dimensional layered semiconductor material palladium phosphorus sulfide, and the structure has anisotropy, so that sensitive polarized light detection is facilitated; as an N-type semiconductor, the Fermi level of the N-type semiconductor is close to a conduction band, the transition frequency of a wide energy band from a valence band to the conduction band and a neighboring energy band in the conduction band of electrons is improved, multi-channel transition of the electrons is realized, the spectrum detection range of the photoelectric detector is widened, and the solar dead zone to the near infrared zone is formed.

Drawings

FIG. 1 is a schematic cross-sectional front view of an embodiment of a broad-spectrum polarized light detector provided in the present invention;

FIG. 2 is a schematic top view of the broad spectrum polarized light detector of FIG. 1;

FIG. 3 is a block flow diagram of an embodiment of a method for fabricating a broad spectrum polarized light detector according to the present invention;

fig. 4 is a schematic diagram of fermi level transition of the broad spectrum polarization light detector provided by the present invention.

The reference numbers illustrate:

reference numerals	Name (R)	Reference numerals	Name (R)
				100	Wide spectrum polarized light detector	2	Polarizing layer
1	Base layer	21	Source electrode
				11	Gate electrode	22	Active layer
12	Insulating layer	23	Drain electrode

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is described in further detail below with reference to specific embodiments and the accompanying drawings.

It should be noted that, if directional indication is involved in the embodiment of the present invention, the directional indication is only used for explaining the relative positional relationship, the motion situation, and the like between the components in a certain posture, and if the certain posture is changed, the directional indication is changed accordingly.

In addition, if there is a description of "first", "second", etc. in an embodiment of the present invention, the description of "first", "second", etc. is for descriptive purposes only and is not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.

New two-dimensional semiconductors play an increasingly important role in modern nanoelectronics and optoelectronics. With the rapid development of science and technology, the requirements on the photoelectric detector are higher and higher, and the common photoelectric detector cannot meet the requirements of people, so that the widening of the spectrum range of the photoelectric detector becomes an important direction.

Since the successful discovery of graphene in 2004, low-dimensional semiconductor polarized light detectors with polarization sensitivity have gradually appeared, and polarized light detection plays an important role in the fields of infrared imaging, environmental monitoring, biological detection and remote sensing detection. However, the detection spectrum of these materials is limited, e.g., to the visible or near infrared region. In the nature, different objects have different polarization states due to different materials and surface information, information carried by reflected light of the different objects has unique polarization states, and after the reflected polarized light irradiates on the two-dimensional semiconductor device, light excites carriers to cause the change of conductivity, so that optical signals in the nature are converted into corresponding electrical signals, and the application of the image sensor is realized. It is therefore an important direction to find materials with broad spectral response and polarization sensitivity and to fabricate them into polarized photodetectors and image sensors.

The invention provides a broad-spectrum polarized light detector and a preparation method thereof, wherein fig. 1 to 3 are an embodiment provided by the invention.

Referring to fig. 1 to fig. 2, the present invention provides a broadband spectrum polarized light detector 100, which includes a substrate layer 1 and a polarization layer 2; the substrate layer 1 has a profiled surface; the polarization layer 2 is arranged on the molding surface and comprises a source electrode 21, an active layer 22 and a drain electrode 23 which are arranged in sequence from left to right; wherein the active layer 22 is an N-type two-dimensional layered palladium phosphosulfide.

In the technical scheme provided by the invention, the active layer is an N-type two-dimensional layered semiconductor material palladium phosphorus sulfide, and the structure has anisotropy, so that sensitive polarized light detection is facilitated; as an N-type semiconductor, the Fermi level of the N-type semiconductor is close to a conduction band, the transition frequency of a wide energy band from a valence band to the conduction band and a neighboring energy band in the conduction band of electrons is improved, multi-channel transition of the electrons is realized, the spectrum detection range of the photoelectric detector is widened, and the solar dead zone to the near infrared zone is formed.

The source electrode 21 and the drain electrode 23 are made of a metal material, and the source electrode 21 and the drain electrode 23 may be formed in various embodiments as long as the source electrode and the drain electrode can be formed; specifically, in the present embodiment, the material of the source electrode 21 and the drain electrode 23 is gold.

In addition, in the present embodiment, the base layer 1 includes the gate electrode 11 and the insulating layer 12: the insulating layer 12 is provided on the end face of the gate electrode 11, and the end face of the insulating layer 12 facing away from the gate electrode 11 forms a molding surface.

Specifically, the gate electrode 11 includes a silicon wafer.

In addition, the insulating layer 12 includes a silicon dioxide substrate.

The gate electrode 11 and the insulating layer 12 may be provided either alone or in combination, and are not limited herein.

To ensure the effectiveness of the active layer 22 material, the average thickness of the active layer 22 is 15 to 25 nm. Specifically, in the present embodiment, the thickness of the active layer 22 is 20 nm.

The width of the active layer 22 was 5 μm, the height was 21nm, and the length was 9 μm. While ensuring the effectiveness of the active layer 22, while saving material

It should be noted that the two related art arrangements of the active layer 22 may exist alternatively or simultaneously, and are not limited herein.

On the other hand, the source electrode 21 and the drain electrode 23 each had a thickness of 70nm, a length of 120 μm and a width of 150 μm.

Referring to fig. 3, based on the above-mentioned broadband spectrum polarized light detector 100, the present invention further provides a method for manufacturing a broadband spectrum polarized light detector, including:

s10, transferring and forming an active layer on the molding surface by a mechanical stripping method to obtain an initial manufacturing layer;

s20, spin-coating a mask material on the initial layer;

s30, etching the mask material to form a source electrode area and a drain electrode area;

s40, depositing to form a source electrode and a drain electrode;

and S50, cleaning and packaging to obtain the wide-spectrum polarized light detector.

According to the technical scheme provided by the invention, the high-quality two-dimensional semiconductor material can be transferred to the base layer through a mechanical stripping method.

Further, step S10 includes:

and S11, transferring the mechanically stripped N-type two-dimensional layered palladium phosphorus sulfide onto the molding surface through polydimethylsiloxane to obtain the active layer.

Further, step S30 includes:

s31, forming a source electrode region and a drain electrode region on the mask material by an electron beam lithography method.

Step S50 includes:

s51, sequentially cleaning with acetone, ethanol and deionized water to obtain a structure to be packaged;

and S52, packaging the structure to be packaged to obtain the wide-spectrum polarized light detector.

In this embodiment, the mask material comprises polymethyl methacrylate.

Palladium phosphosulfide (PdPS) is used as a novel two-dimensional semiconductor material to be applied to a wide-spectrum polarized light detector and an image sensor, and the light detection range from solar blindness to a near infrared light domain is realized through multi-channel transition of electrons.

The phosphorus palladium sulfide as the active layer belongs to an orthorhombic structure with a space group of Pbcn, has high anisotropy and polarization sensitivity to light; the photoresponse range of the semiconductor material palladium sulfide phosphide (PdPS) contains a solar dead zone, the whole visible light and near infrared light domains, so that the semiconductor material palladium sulfide can be applied to a wide-spectrum polarized light detector and an image sensor with wide spectrum.

Palladium phosphorus sulfide (PdPS) is used as a novel N-type semiconductor material, a main carrier is an electron, and the Fermi level of the PdPS is close to the bottom of a conduction band; when light irradiates on the palladium phosphide sulfide (PdPS), the energy of photons is converted into the energy of electrons, so that the electrons in a low energy state are promoted to jump to a high energy state; as shown in fig. 4, since the fermi level is located close to the conduction band, the probability of electron transition from a low energy state to a high energy state increases, so that the probability of free electron occurrence in the conduction band increases, multi-channel transition of electrons is formed, and the light detection range from solar blind to near-infrared light domain is realized.

The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.