阅读说明：本技术 一种单电源igbt负压驱动电路 (Single-power-supply IGBT negative-pressure driving circuit ) 是由 王克丰 于 2021-08-10 设计创作，主要内容包括：本发明提出一种单电源IGBT负压驱动电路,具体包括主开关电源IGBT驱动电源绕组、IGBT低端电源整流滤波电路、IGBT低端负压产生电路、IGBT高端电源隔离产生电路、IGBT高端电源负压产生电路、IGBT高端驱动电路和IGBT低端驱动电路,主开关电源IGBT驱动电源绕组连接IGBT低端电源整流滤波电路和IGBT高端电源隔离产生电路,IGBT低端电源整流滤波电路连接IGBT低端负压产生电路和IGBT低端驱动电路,IGBT高端电源隔离产生电路连接IGBT高端电源负压产生电路和IGBT高端驱动电路,本发明能够保证IGBT的开通和关断的稳定性,完全克服米勒效应所造成的IGBT上下桥臂导通。(The invention provides a single-power-supply IGBT negative-pressure driving circuit which specifically comprises a main switching power supply IGBT driving power supply winding, an IGBT low-end power supply rectifying and filtering circuit, an IGBT low-end negative-pressure generating circuit, an IGBT high-end power supply isolating and generating circuit, an IGBT high-end driving circuit and an IGBT low-end driving circuit, wherein the main switching power supply IGBT driving power supply winding is connected with the IGBT low-end power supply rectifying and filtering circuit and the IGBT high-end power supply isolating and generating circuit, the IGBT low-end power supply rectifying and filtering circuit is connected with the IGBT low-end negative-pressure generating circuit and the IGBT low-end driving circuit, and the IGBT high-end power supply isolating and generating circuit is connected with the high-end IGBT power supply negative-pressure generating circuit and the IGBT high-end driving circuit.)

1. A single-power IGBT negative pressure drive circuit is characterized by specifically comprising a main switch power supply IGBT drive power supply winding, an IGBT low-end power supply rectification filter circuit, an IGBT low-end negative pressure generating circuit, an IGBT high-end power supply isolation generating circuit, an IGBT high-end power supply negative pressure generating circuit, an IGBT high-end drive circuit and an IGBT low-end drive circuit, wherein the main switch power supply IGBT drive power supply winding is connected with the IGBT low-end power supply rectification filter circuit and the IGBT high-end power supply isolation generating circuit, the IGBT low-end power supply rectification filter circuit is connected with the IGBT low-end negative pressure generating circuit and the IGBT low-end drive circuit, and the IGBT high-end power supply isolation generating circuit is connected with the IGBT high-end power supply negative pressure generating circuit and the IGBT high-end drive circuit.

2. The single-power-supply IGBT negative-voltage driving circuit according to claim 1, wherein the main switching power supply IGBT driving power supply winding comprises a transformer Q1, the transformer Q1 comprises an IGBT winding, the output of the IGBT winding is divided into two paths, one path is input into the IGBT low-side power supply rectifying and filtering circuit, and the other path is input into the IGBT high-side power supply isolation generating circuit.

3. The single-power-supply IGBT negative-voltage driving circuit as claimed in claim 2, wherein the output frequency range of the IGBT winding is 20 kHz-150 kHz, and the voltage amplitude range is 15V-30V.

4. The single-power-supply IGBT negative-voltage driving circuit as claimed in claim 2, wherein the IGBT low-side power supply rectifying and filtering circuit comprises a diode D1, a capacitor C1 and a capacitor C2, wherein the anode of the diode D1 is connected with the dotted terminal of the IGBT winding, the capacitor C1 and the capacitor C2 are connected between the cathode of the diode D1 and the non-dotted terminal of the IGBT winding in parallel, rectification is performed through the diode D1, and filtering is performed through the capacitor C1 and the capacitor C2.

5. The single-power-supply IGBT negative voltage driving circuit according to claim 4, wherein the IGBT low-end negative voltage generating circuit comprises a resistor R4, a Zener diode Z1, a capacitor C3 and a capacitor C8, one end of the resistor R4 is connected with the cathode of the diode D1, the other end of the resistor R4 is connected with the cathode of the Zener diode Z1, the anode of the Zener diode Z1 is connected with the non-dotted terminal of the IGBT winding, the capacitor C3 and the capacitor C8 are connected between the other end of the resistor R4 and the non-dotted terminal of the IGBT winding in a parallel mode, and the cathode of the Zener diode Z1 is connected with the emitter of the IGBT.

6. The single-power-supply IGBT negative-voltage driving circuit as claimed in claim 5, wherein the voltage regulation value of the Zener diode Z1 is 5V-15V, the value range of the capacitor C8 is 1-220 μ F, and the value range of the capacitor C3 is 0.1 μ F-1 μ F.

7. The single-power-supply IGBT negative-voltage driving circuit as claimed in claim 2, wherein the IGBT high-side power isolation generating circuit comprises a resistor R9, a diode D2, an isolation transformer Q2, a diode D3, a capacitor C9, a capacitor C4 and a resistor R12, one end of the resistor R9 is connected with the dotted terminal of the IGBT winding, the other end of the resistor R9 is connected with the anode of the diode D2, the cathode of the diode D2 is connected with the dotted terminal of the primary coil of the isolation transformer Q2, the dotted terminal of the secondary coil of the isolation transformer Q2 is connected with the anode of the diode D3, and the capacitor C9, the capacitor C4 and the resistor R12 are connected in parallel between the cathode of the diode D3 and the non-dotted terminal of the secondary coil of the isolation transformer Q2.

8. The single-power-supply IGBT negative voltage driving circuit as claimed in claim 7, wherein the IGBT high-end power supply negative voltage generating circuit comprises a resistor R5, a Zener diode Z2 and a capacitor C5, one end of the resistor R5 is connected with the cathode of the diode D3, the other end of the resistor R5 is connected with the cathode of the Zener diode Z2, the anode of the Zener diode Z2 is connected with the non-dotted terminal of the secondary coil of the isolation transformer Q2, the capacitor C5 is connected between the other end of the resistor R5 and the non-dotted terminal of the secondary coil of the isolation transformer Q2, and the cathode of the Zener diode Z2 is connected with the emitter of the IGBT.

9. The single-power-supply IGBT negative voltage driving circuit as claimed in claim 8, wherein the voltage regulation value of the Zener diode Z2 is 5V-15V, and the value of the capacitor C5 is more than 1 μ F.

10. The single-power-supply IGBT negative-voltage driving circuit as claimed in claim 1, wherein the IGBT high-end driving circuit comprises an optical coupler PC2, an output pin of the optical coupler PC2 is connected to a gate electrode of the IGBT through a resistor R8, a resistor R11 performs charge discharge, and a capacitor C11 filters a PWM output waveform.

11. The single-power-supply IGBT negative-voltage driving circuit as claimed in claim 1, wherein the IGBT low-end driving circuit comprises an optocoupler PC1, an output pin of the optocoupler PC1 is connected to a gate of the IGBT through a resistor R7, a resistor R10 performs charge draining, and a capacitor C10 filters a PWM output waveform.

Technical Field

The invention relates to the field of IGBT driving, in particular to a single-power-supply IGBT negative-voltage driving circuit.

Background

In the IGBT driving design, for some low-power driving, the single power driving technique has obvious advantages based on the consideration of cost and simplified driving power supply design, but when driving with a single power supply, the IGBT cannot be turned off quickly and reliably. Patent (cn201210299622. x) discloses a high-performance low-cost IGBT negative-pressure bootstrap drive circuit, although negative pressure can be generated when turning off, the amplitude of the negative pressure is related to the carrier frequency of PWM modulation pulse and PWM duty ratio, the charging current of the filter capacitor generating the negative pressure is generated by the output pin of the drive optocoupler when outputting high level, and the burden of the drive optocoupler is increased.

Disclosure of Invention

The invention provides a single-power-supply IGBT negative-voltage driving circuit, which aims to solve the technical problem that in the prior art, when an IGBT is driven by a single power supply, the turn-off is unreliable.

Therefore, the single-power-supply IGBT negative-pressure driving circuit provided by the invention specifically comprises a main switching power supply IGBT driving power supply winding, an IGBT low-end power supply rectifying and filtering circuit, an IGBT low-end negative-pressure generating circuit, an IGBT high-end power supply isolating and generating circuit, an IGBT high-end driving circuit and an IGBT low-end driving circuit, wherein the main switching power supply IGBT driving power supply winding is connected with the IGBT low-end power supply rectifying and filtering circuit and the IGBT high-end power supply isolating and generating circuit, the IGBT low-end power supply rectifying and filtering circuit is connected with the IGBT low-end negative-pressure generating circuit and the IGBT low-end driving circuit, and the IGBT high-end power supply isolating and generating circuit is connected with the IGBT high-end power supply negative-pressure generating circuit and the IGBT high-end driving circuit.

Furthermore, the main switch power supply IGBT driving power supply winding comprises a transformer Q1, the transformer Q1 comprises an IGBT winding, the output of the IGBT winding is divided into two paths, one path is input into the IGBT low-end power supply rectifying and filtering circuit, and the other path is input into the IGBT high-end power supply isolation generating circuit.

Furthermore, the output frequency range of the IGBT winding is 20 kHz-150 kHz, and the voltage amplitude range is 15V-30V.

Further, the IGBT low-side power supply rectifying and filtering circuit comprises a diode D1, a capacitor C1 and a capacitor C2, wherein the anode of the diode D1 is connected with the same-name end of the IGBT winding, the capacitor C1 and the capacitor C2 are connected between the cathode of the diode D1 and the non-same-name end of the IGBT winding in a parallel mode, rectification is carried out through the diode D1, and filtering is carried out through the capacitor C1 and the capacitor C2.

Further, the IGBT low-end negative voltage generating circuit includes a resistor R4, a zener diode Z1, a capacitor C3 and a capacitor C8, one end of the resistor R4 is connected to the cathode of the diode D1, the other end of the resistor R4 is connected to the cathode of the zener diode Z1, the anode of the zener diode Z1 is connected to the non-dotted terminal of the IGBT winding, the capacitor C3 and the capacitor C8 are connected in parallel between the other end of the resistor R4 and the non-dotted terminal of the IGBT winding, and the cathode of the zener diode Z1 is connected to the emitter of the IGBT.

Further, the voltage stabilizing value of the voltage stabilizing diode Z1 is 5V-15V, the value range of the capacitor C8 is 1-220 muF, and the value range of the capacitor C3 is 0.1 muF-1 muF.

Further, the IGBT high-side power isolation generation circuit includes a resistor R9, a diode D2, an isolation transformer Q2, a diode D3, a capacitor C9, a capacitor C4 and a resistor R12, one end of the resistor R9 is connected to the dotted terminal of the IGBT winding, the other end of the resistor R9 is connected to the anode of the diode D2, the cathode of the diode D2 is connected to the dotted terminal of the primary coil of the isolation transformer Q2, the dotted terminal of the secondary coil of the isolation transformer Q2 is connected to the anode of the diode D3, and the capacitor C9, the capacitor C4 and the resistor R12 are connected in parallel between the cathode of the diode D3 and the non-dotted terminal of the secondary coil of the isolation transformer Q2.

Further, the negative voltage generating circuit of the IGBT high-side power supply comprises a resistor R5, a zener diode Z2 and a capacitor C5, wherein one end of the resistor R5 is connected to the cathode of the diode D3, the other end of the resistor R5 is connected to the cathode of the zener diode Z2, the anode of the zener diode Z2 is connected to the non-dotted terminal of the secondary coil of the isolation transformer Q2, the capacitor C5 is connected between the other end of the resistor R5 and the non-dotted terminal of the secondary coil of the isolation transformer Q2, and the cathode of the zener diode Z2 is connected to the emitter of the IGBT.

Furthermore, the voltage stabilizing value of the voltage stabilizing diode Z2 is 5V-15V, and the value of the capacitor C5 is more than 1 muF.

Further, the IGBT high-side driving circuit includes an optocoupler PC2, an output pin of the optocoupler PC2 is connected to a gate of the IGBT through a resistor R8, a resistor R11 performs charge draining, and a capacitor C11 filters a PWM output waveform.

Further, the IGBT low-end driving circuit comprises an optocoupler PC1, an output pin of the optocoupler PC1 is connected to a gate of the IGBT through a resistor R7, a resistor R10 is used for charge discharging, and a capacitor C10 is used for filtering a PWM output waveform.

Compared with the prior art, the invention has the following beneficial effects:

1) the stability of the switching-on positive voltage and the switching-off negative voltage of the IGBT is ensured, the IGBT is not influenced by the carrier and the duty ratio of PWM (pulse-width modulation) pulse, and the conduction of an upper bridge arm and a lower bridge arm of the IGBT caused by the Miller effect can be completely overcome;

2) the scheme is simple, the cost is low, and the IGBT driving circuit can be widely used for IGBT driving of frequency converters and inverters.

Drawings

Fig. 1 is a schematic diagram of a single-power-supply IGBT negative voltage driving circuit according to an embodiment of the present invention.

Detailed Description

In order to more clearly understand the technical features, objects, and effects of the present invention, embodiments of the present invention will now be described with reference to the accompanying drawings.

The single-power-supply IGBT negative-pressure driving circuit provided by the embodiment of the invention comprises a main switching power supply IGBT driving power supply winding, an IGBT low-end power supply rectification filter circuit, an IGBT low-end negative-pressure generating circuit, an IGBT high-end power supply isolation generating circuit, an IGBT high-end driving circuit and an IGBT low-end driving circuit, wherein the main switching power supply IGBT driving power supply winding is connected with the IGBT low-end power supply rectification filter circuit and the IGBT high-end power supply isolation generating circuit, the IGBT low-end power supply rectification filter circuit is connected with the IGBT low-end negative-pressure generating circuit and the IGBT low-end driving circuit, and the IGBT high-end power supply isolation generating circuit is connected with the IGBT high-end power supply negative-pressure generating circuit and the IGBT high-end driving circuit.

The IGBT driving power supply winding of the main switching power supply comprises a transformer Q1 of a flyback power supply, the IGBT winding is a group of windings of a transformer Q1, the output frequency range of the IGBT winding is 20 kHz-150 kHz, the voltage amplitude range is 15V-30V, the output of the winding is divided into two paths, one path of the output is input into an IGBT low-end power supply rectifying and filtering circuit, and the other path of the output is input into an IGBT high-end power supply isolation generating circuit.

The IGBT low-side power supply rectifying and filtering circuit comprises a diode D1, a capacitor C1 and a capacitor C2, wherein the anode of the diode D1 is connected with the same-name end of an IGBT winding, the capacitor C1 and the capacitor C2 are connected between the cathode of the diode D1 and the non-same-name end of the IGBT winding in a parallel mode, rectification is carried out through the diode D1, filtering is carried out through the capacitor C1 and the capacitor C2, and processed signals are used as an IGBT low-side driving power supply.

The IGBT low-end negative voltage generating circuit comprises a resistor R4, a zener diode Z1, a capacitor C3 and a capacitor C8, wherein one end of the resistor R4 is connected with the cathode of a diode D1, the other end of the resistor R4 is connected with the cathode of a zener diode Z1, the anode of the zener diode Z1 is connected with the non-dotted terminal of an IGBT winding, a capacitor C3 and a capacitor C8 are connected between the other end of the resistor R4 and the non-dotted terminal of the IGBT winding in a parallel mode, the resistor R4 and the zener diode Z1 are connected in series to receive an IGBT low-end driving power supply, the zener diode Z1 has a voltage value of 5V-15V, the capacitor C3 and the capacitor C8 are negative voltage filter capacitors, the value range of the C8 is 1-220 muF, the value range of the C3 is 0.1 muF-1 muF, and the cathode of the zener diode Z1 is connected to an emitter of the IGBT.

The IGBT high-end power isolation generation circuit comprises a resistor R9, a diode D2, an isolation transformer Q2, a diode D3, a capacitor C9, a capacitor C4 and a resistor R12, wherein one end of the resistor R9 is connected with the dotted terminal of an IGBT winding, the other end of the resistor R9 is connected with the anode of a diode D2, the cathode of the diode D2 is connected with the dotted terminal of a primary coil of the isolation transformer Q2, the dotted terminal of a secondary coil of the isolation transformer Q2 is connected with the anode of a diode D3, and the capacitor C9, the capacitor C4 and the resistor R12 are connected between the cathode of the diode D3 and the non-dotted terminal of a secondary coil of the isolation transformer Q2 in a parallel mode.

The IGBT high-end power supply negative voltage generating circuit comprises a resistor R5, a voltage stabilizing diode Z2 and a capacitor C5, wherein one end of the resistor R5 is connected with the cathode of a diode D3, the other end of the resistor R5 is connected with the cathode of a voltage stabilizing diode Z2, the anode of the voltage stabilizing diode Z2 is connected with the non-dotted terminal of the secondary coil of an isolation transformer Q2, a capacitor C5 is connected between the other end of the resistor R5 and the non-dotted terminal of the secondary coil of the isolation transformer Q2, the resistor R5 is connected with a voltage stabilizing diode Z2 in series to receive high-end IGBT driving power supply, the voltage stabilizing value of the voltage stabilizing diode Z2 is 5V-15V, the capacitor C5 is a negative voltage filter capacitor, the value of the negative voltage filter capacitor is more than 1 muF, and the cathode of the voltage stabilizing diode Z2 is connected with the emitter of the IGBT.

The IGBT high-end driving circuit comprises an optocoupler PC2, an output pin of an optocoupler PC2 is connected to a grid electrode of the IGBT through a resistor R8, a resistor R11 is used for discharging charges, and a capacitor C11 filters PWM output waveforms.

The IGBT low-end driving circuit comprises an optocoupler PC1, an output pin of an optocoupler PC1 is connected to a grid electrode of the IGBT through a resistor R7, a resistor R10 is used for discharging electric charges, and a capacitor C10 filters PWM output waveforms.

The optocoupler PC1 and the optocoupler PC2 can be TLP701 type high-speed optocouplers developed and produced by Toshiba.

The single-power-supply IGBT negative-pressure driving circuit provided by the invention can ensure the stability of the turn-on positive voltage and the turn-off negative voltage of the IGBT when the IGBT is driven by a single power supply, is not influenced by the carrier wave and the duty ratio of PWM (pulse-width modulation) pulse, can completely overcome the conduction of an upper bridge arm and a lower bridge arm of the IGBT caused by the Miller effect, has simple scheme and low cost, and can be widely used for the IGBT driving of a frequency converter and an inverter.

The above disclosure is only for the purpose of illustrating the preferred embodiments of the present invention, and it should not be understood that the scope of the present invention is limited thereby. It should be noted that those skilled in the art should recognize that they may make equivalent variations to the embodiments of the present invention without departing from the spirit and scope of the present invention.