阅读说明：本技术 一种量子芯片的封装装置及其制造方法和一种量子器件 (Quantum chip packaging device and manufacturing method thereof and quantum device ) 是由 赵勇杰 李业 贾健豪 方杰 杨晖 于 2021-08-31 设计创作，主要内容包括：本发明公开了一种量子芯片的封装装置及其制造方法和一种量子器件,所述量子芯片的封装装置包括：第一基板；第一共面波导传输线,所述第一共面波导传输线包括第一中心导带及位于所述第一中心导带两侧的第一接地导带；第一导电层,所述第一导电层形成于所述第一接地导带上,且所述第一导电层与位于所述第一中心导带两侧的所述第一接地导带形成第一屏蔽腔,所述第一中心导带位于所述第一屏蔽腔内,本发明提出的量子芯片的封装装置,在其内部形成有第一导电层,所述第一导电层与第一共面波导传输线的第一接地导带形成第一屏蔽腔,第一共面波导传输线的第一中心导带位于所述第一屏蔽腔内,有效防止量子芯片上各个量子比特的传输信号相互串扰。(The invention discloses a quantum chip packaging device, a manufacturing method thereof and a quantum device, wherein the quantum chip packaging device comprises: a first substrate; a first coplanar waveguide transmission line including a first central conduction band and first ground conduction bands located on both sides of the first central conduction band; the first conducting layer is formed on the first grounding conducting strip, the first conducting layer and the first grounding conducting strips positioned on two sides of the first central conducting strip form a first shielding cavity, and the first central conducting strip is positioned in the first shielding cavity.)

1. An apparatus for packaging a quantum chip, comprising:

a first substrate (1);

a first coplanar waveguide transmission line (3), the first coplanar waveguide transmission line (3) being formed on the first substrate (1), the first coplanar waveguide transmission line (3) including a first central conduction band and first ground conduction bands located on both sides of the first central conduction band;

the first conducting layer is formed on the first grounding conducting strip, the first conducting layer and the first grounding conducting strip positioned on two sides of the first central conducting strip form a first shielding cavity, and the first central conducting strip is positioned in the first shielding cavity.

2. The quantum chip packaging apparatus of claim 1, wherein the first conductive layer comprises:

a first sublayer (5) located on the first ground conduction band; and

a second sub-layer (7) on the first sub-layer (5) on both sides of the first central conduction band.

3. The quantum chip packaging apparatus according to claim 2, wherein a first adhesion dielectric layer is formed between the first sub-layer (5) and the first ground conduction band, and a second adhesion dielectric layer is formed between the first sub-layer (5) and the second sub-layer (7).

4. The packaging device for quantum chips according to claim 3, further comprising a second substrate (6), wherein the second substrate (6) and the first substrate (1) are laminated, and wherein the second sub-layer (7) is formed on a first surface of the second substrate (6) on the side of the first substrate (1).

5. The packaging device for quantum chips according to claim 4, wherein the first substrate (1) and the second substrate (6) are both ceramic substrates.

6. The quantum chip packaging apparatus of claim 1, wherein the first conductive layer is integrally formed across the first ground conduction band on both sides of the first central conduction band.

7. The packaging device for quantum chips according to any of claims 1-6, wherein the first substrate (1) has a first substrate surface and a second substrate surface opposite to each other, and the first coplanar waveguide transmission line (3) is formed on both the first substrate surface and the second substrate surface.

8. The quantum chip packaging apparatus of claim 4 or 5, further comprising:

a second coplanar waveguide transmission line formed on a surface of the second substrate (6) on a side facing away from the first substrate (1), the second coplanar waveguide transmission line including a second central conduction band and second ground conduction bands located on both sides of the second central conduction band;

the second conducting layer is formed on the second grounding conducting strip, the second conducting layer and the second grounding conducting strip positioned on two sides of the second central conducting strip form a second shielding cavity, and the second central conducting strip is positioned in the second shielding cavity.

9. A quantum device, comprising:

the quantum chip (2) is provided with a coplanar waveguide transmission line, and the coplanar waveguide transmission line comprises a central conduction band and grounding conduction bands positioned on two sides of the central conduction band;

a quantum chip package device according to any of claims 1 to 7, wherein said central conduction band is electrically connected to said first central conduction band and said ground conduction band is electrically connected to said first ground conduction band.

10. A quantum device, comprising:

the quantum chip (2) is provided with a coplanar waveguide transmission line, and the coplanar waveguide transmission line comprises a central conduction band and grounding conduction bands positioned on two sides of the central conduction band;

the packaged device of a quantum chip of claim 8, the central conduction band being electrically connected to the first central conduction band and/or the second central conduction band, the ground conduction band being electrically connected to the second ground conduction band and/or the second ground conduction band.

11. A method for manufacturing a quantum chip package device, comprising:

providing a first substrate (1);

forming a first coplanar waveguide transmission line (3) on the first substrate (1), the first coplanar waveguide transmission line (3) including a first central conduction band and first ground conduction bands located on both sides of the first central conduction band;

and forming a first conducting layer on the first grounding conducting strip, wherein the first conducting layer and the first grounding conducting strip positioned at two sides of the first central conducting strip form a first shielding cavity, and the first central conducting strip is positioned in the first shielding cavity.

12. The method of fabricating a quantum chip package device according to claim 11, wherein the step of forming a first conductive layer on the first ground conduction band comprises:

forming a first sub-layer (5) on the first ground conduction band on both sides of the first central conduction band;

providing a second substrate (6);

forming a second sub-layer (7) on a first surface of the second substrate (6) on the first substrate (1) side;

welding the first sub-layer (5) to the second sub-layer (7).

Technical Field

The invention belongs to the technical field of quantum computers, and particularly relates to a quantum chip packaging device, a manufacturing method thereof and a quantum device.

Background

Quantum computers are physical devices that perform high-speed mathematical and logical operations, store and process quantum information in compliance with the laws of quantum mechanics. The quantum computer is characterized by high running speed, strong information processing capability, wide application range and the like. The quantum chip is a relatively fragile component and is very easily affected by clutter in the surrounding environment, so that the transmission and performance of signals on the quantum chip are affected, and therefore, the quantum chip needs to be packaged and then used in practical use.

The existing packaging device of the quantum chip has poor crosstalk shielding performance, and when the quantum chip is in a working state, transmission signals of each quantum bit are easy to mutually crosstalk in the internal transmission process of the packaging device, so that the signal transmission stability is poor.

Disclosure of Invention

The invention aims to provide a quantum chip packaging device, a manufacturing method thereof and a quantum device, aiming at solving the defects in the prior art, and provides the quantum chip packaging device capable of shielding crosstalk, the manufacturing method thereof and the quantum device.

An embodiment of the present application provides a quantum chip packaging apparatus, including:

a first substrate;

a first coplanar waveguide transmission line formed on the first substrate, the first coplanar waveguide transmission line including a first central conduction band and first ground conduction bands located on both sides of the first central conduction band;

the first conducting layer is formed on the first grounding conducting strip, the first conducting layer and the first grounding conducting strip positioned on two sides of the first central conducting strip form a first shielding cavity, and the first central conducting strip is positioned in the first shielding cavity.

The quantum chip packaging apparatus as described above, wherein the first conductive layer comprises:

a first sublayer located on the first ground conduction band; and

a second sub-layer on the first sub-layer on both sides of the first central conduction band.

The packaging device for the quantum chip is characterized in that a first adhesion medium layer is formed between the first sub-layer and the first ground conduction band, and a second adhesion medium layer is formed between the first sub-layer and the second sub-layer.

The packaging device for the quantum chip further comprises a second substrate, wherein the second substrate and the first substrate are stacked, and the second sub-layer is formed on a first surface of the second substrate on one side of the first substrate.

The packaging device of the quantum chip is described above, wherein the first substrate and the second substrate are both ceramic substrates.

The packaging device for quantum chips as described above, wherein the first conductive layer is integrally formed to bridge the first ground conduction band on both sides of the first central conduction band.

The packaging device of the quantum chip is as described above, wherein the first substrate has a first substrate surface and a second substrate surface which are opposite to each other, and the first coplanar waveguide transmission line is formed on both the first substrate surface and the second substrate surface.

The packaging device of the quantum chip, further comprising:

the second coplanar waveguide transmission line is formed on the surface of one side, away from the first substrate, of the second substrate and comprises a second central conduction band and second grounding conduction bands positioned on two sides of the second central conduction band;

the second conducting layer is formed on the second grounding conducting strip, the second conducting layer and the second grounding conducting strip positioned on two sides of the second central conducting strip form a second shielding cavity, and the second central conducting strip is positioned in the second shielding cavity.

Another embodiment of the present application provides a quantum device, comprising:

the quantum chip is provided with a coplanar waveguide transmission line, and the coplanar waveguide transmission line comprises a central conduction band and grounding conduction bands positioned on two sides of the central conduction band;

in the packaging device of the quantum chip, the central conduction band is electrically connected with the first central conduction band, and the ground conduction band is electrically connected with the first ground conduction band.

A third embodiment of the present application provides a quantum device, including:

the quantum chip is provided with a coplanar waveguide transmission line, and the coplanar waveguide transmission line comprises a central conduction band and grounding conduction bands positioned on two sides of the central conduction band;

the quantum chip packaging device as described above, wherein the central conduction band is electrically connected to the first central conduction band and/or the second central conduction band, and the ground conduction band is electrically connected to the second ground conduction band and/or the second ground conduction band.

A fourth embodiment of the present application provides a method for manufacturing a quantum chip packaging device, including:

providing a first substrate;

forming a first coplanar waveguide transmission line on the first substrate, the first coplanar waveguide transmission line including a first central conduction band and first ground conduction bands located on both sides of the first central conduction band;

and forming a first conducting layer on the first grounding conducting strip, wherein the first conducting layer and the first grounding conducting strip positioned at two sides of the first central conducting strip form a first shielding cavity, and the first central conducting strip is positioned in the first shielding cavity.

The method for manufacturing the quantum chip package device as described above, wherein the step of forming the first conductive layer on the first ground conduction band includes:

forming a first sublayer on the first ground conduction band on both sides of the first central conduction band;

providing a second substrate;

forming a second sublayer on a first surface of the second substrate on one side of the first substrate;

welding the first sub-layer and the second sub-layer.

Compared with the prior art, the packaging device of the quantum chip provided by the invention has the advantages that the first conducting layer with the crosstalk shielding function is formed in the packaging device, the first coplanar waveguide transmission line for transmitting the transmission signals of the quantum bits on the quantum chip is formed in the packaging device, the first conducting layer and the first grounding conduction band of the first coplanar waveguide transmission line form the first shielding cavity, and the first central conduction band of the first coplanar waveguide transmission line is positioned in the first shielding cavity, so that the purpose of isolating and shielding the transmission signals of all the quantum bits on the quantum chip is realized, the mutual crosstalk of the transmission signals of all the quantum bits on the quantum chip is effectively prevented, and the stability of signal transmission is greatly improved.

Drawings

Fig. 1 is a top view of a first substrate in a quantum chip packaging apparatus according to an embodiment of the present invention;

fig. 2 is a perspective view of an internal structure of a quantum chip packaging apparatus according to an embodiment of the present invention;

FIG. 3 is a cross-sectional view of a quantum chip packaging apparatus according to an embodiment of the present invention;

FIG. 4 is a cross-sectional view of a quantum chip packaging apparatus according to another embodiment of the present invention;

FIG. 5 is a cross-sectional view of a quantum chip packaging apparatus according to another embodiment of the present invention;

fig. 6 is a perspective view of an internal structure of a quantum chip packaging apparatus according to another embodiment of the present invention.

Description of reference numerals: 1-a first substrate, 2-a quantum chip, 3-a first coplanar waveguide transmission line, 4-a bonding wire, 5-a first sublayer, 6-a second substrate, and 7-a second sublayer.

Detailed Description

The embodiments described below with reference to the drawings are illustrative only and should not be construed as limiting the invention.

To make the objects, technical solutions and advantages of the embodiments of the present application clearer, the embodiments of the present application will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that in the examples of the present application, numerous technical details are set forth in order to provide a better understanding of the present application. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments. The following embodiments are divided for convenience of description, and should not constitute any limitation to the specific implementation manner of the present application, and the embodiments may be mutually incorporated and referred to without contradiction.

It should be noted that the terms "first," "second," and the like in the description and claims of this application and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the application described herein are capable of operation in sequences other than those illustrated or described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.

Fig. 1 is a top view of a first substrate in a quantum chip packaging apparatus according to an embodiment of the present invention.

Fig. 2 is a perspective view of an internal structure of a quantum chip packaging apparatus according to an embodiment of the present invention.

Fig. 3 is a cross-sectional view of a quantum chip packaging apparatus according to an embodiment of the present invention.

Referring to fig. 1 to 3, an apparatus for packaging a quantum chip according to an embodiment of the present invention includes:

the quantum chip packaging structure comprises a first substrate 1, wherein the first substrate 1 can be used for bearing a quantum chip 2, and exemplarily, a specific mode is that a groove for mounting the quantum chip is formed in the surface of the first substrate 1, and the quantum chip 2 is arranged in the groove;

a first coplanar waveguide transmission line 3, the first coplanar waveguide transmission line 3 being formed on the first substrate 1, the first coplanar waveguide transmission line 3 including a first central conduction band and first ground conduction bands located at two sides of the first central conduction band, the first coplanar waveguide transmission line 3 being made of a superconducting material, illustratively, the first coplanar waveguide transmission line 3 being made of a tantalum nitride film or an aluminum film or the like covering the first substrate 1, the tantalum nitride film or the aluminum film exhibiting superconducting properties at low temperature, the material of the first substrate 1 being selected as required, for example, the first substrate 1 being a ceramic substrate or a silicon substrate or the like;

the first conducting layer is formed on the first grounding conducting strip, the first conducting layer and the first grounding conducting strips positioned on two sides of the first central conducting strip form a first shielding cavity, the first central conducting strip is positioned in the first shielding cavity, transmission signals of qubits on the quantum chip 2 are transmitted through the first central conducting strip, and in the signal transmission process, the mutual crosstalk of the transmission signals of the qubits on the quantum chip can be effectively prevented by utilizing the first shielding cavity.

The invention provides a packaging device of a quantum chip, a first conductive layer with a crosstalk shielding function is formed in the packaging device, a first coplanar waveguide transmission line 3 for transmitting transmission signals of qubits on the quantum chip is formed in the packaging device, the first conductive layer and a first grounding conduction band of the first coplanar waveguide transmission line 3 form a first shielding cavity, a first central conduction band of the first coplanar waveguide transmission line 3 is positioned in the first shielding cavity, signals of the qubits on the quantum chip 2 are respectively transmitted through the first central conduction band, the first conductive layer and the first grounding conduction bands positioned at two sides of the first central conduction band form a first shielding cavity, the purpose of isolating and shielding the transmission signals of the qubits can be realized, and the mutual crosstalk of the transmission signals of the qubits on the quantum chip 2 can be effectively prevented, the stability of signal transmission is greatly improved.

In some embodiments of the present invention, the first conductive layer includes a first sub-layer 5 located on the first ground conduction band, and a second sub-layer 7 located on the first sub-layer 5 on two sides of the first central conduction band, the first sub-layer 5 is made of a superconducting material, illustratively, the first sub-layer 5 is a tin pillar soldered on the first ground conduction band, the tin pillar is symmetrically located on two sides of the first central conduction band, tin can exhibit superconducting performance at ultra-low temperature, the second sub-layer 7 is made of a superconducting material, and illustratively, the second sub-layer 7 is made of a tantalum nitride film or an aluminum film.

In this embodiment, a first conductive layer is constructed on the first ground conductive strip by using the first sub-layer 5 and the second sub-layer 7, the first central conductive strip is located in the first conductive layer, the first central conductive strip of the first coplanar waveguide transmission line 3 is isolated in a closed manner by using the first sub-layer 5 and the second sub-layer 7, and when transmission signals of each qubit are transmitted through the first central conductive strip, crosstalk between the transmission signals of each qubit can be prevented.

In some embodiments of the present invention, a first adhesion dielectric layer is formed between the first sub-layer 5 and the first ground conduction band, and a second adhesion dielectric layer is formed between the first sub-layer 5 and the second sub-layer 7, for example, a specific manner is that the first adhesion dielectric layer and the second adhesion dielectric layer are made of metal such as gold or silver.

The first adhesion medium layer is formed between the first sub-layer 5 and the first grounding conduction band, so that one end of the first sub-layer 5 is firmly welded on the first grounding conduction band, the second adhesion medium layer is formed between the first sub-layer 5 and the second sub-layer 7, so that the other end of the first sub-layer 5 is firmly welded on the second sub-layer 7, and the first adhesion medium layer and the second adhesion medium layer are arranged, so that the connection strength of the first sub-layer 5, the first grounding conduction band and the second sub-layer 7 is improved.

In some embodiments of the present invention, the quantum chip packaging device further includes a second substrate 6, the second substrate 6 and the first substrate 1 are stacked, the second substrate 6 and the first substrate 1 are parallel to each other, and the second sub-layer 7 is formed on a first surface of the second substrate 6 on one side of the first substrate 1, for example, in a specific manner, the second substrate 6 is made of the same material as the first substrate 1 and is a ceramic substrate, the second substrate 6 is connected to the first substrate 1, a cavity for accommodating the quantum chip 2 is formed between the second substrate 6 and the first substrate 1, and a second sub-layer 7 is formed on a surface of the second substrate 6 facing the first substrate 1.

The second sub-layer 7 is formed on one surface, facing the first substrate 1, of the second substrate 6, the second substrate 6 is used for providing support for the second sub-layer 7, the strength of the second sub-layer 7 can be improved, and meanwhile, the cavity used for containing the quantum chip 2 is formed by the second substrate 6 and the first substrate 1, and the quantum chip 2 is protected.

Fig. 6 is a perspective view of an internal structure of a quantum chip packaging apparatus according to another embodiment of the present invention.

Referring to fig. 6, in some embodiments of the invention, the first conductive layer is integrally formed to cross the first ground conductive strip on both sides of the first central conductive strip.

In this embodiment, the first conductive layer is integrally formed, the first conductive layer and the first grounding conductive band on two sides of the first central conductive band form a first shielding cavity, so that the first central conductive band is located in the first conductive layer, and no joint gap exists inside the integrally formed first conductive layer, thereby improving the shielding effect of the first shielding cavity and further avoiding mutual crosstalk between transmission signals of each qubit.

Fig. 4 is a cross-sectional view of a quantum chip packaging apparatus according to another embodiment of the present invention.

Referring to fig. 4, in some embodiments of the present invention, the first substrate 1 has a first substrate surface and a second substrate surface opposite to each other, the first coplanar waveguide transmission line 3 is formed on both the first substrate surface and the second substrate surface, the first coplanar waveguide transmission line 3 includes a first central conductive strip and first ground conductive strips located on both sides of the first central conductive strip, first sub-layers are formed on both the first substrate surface and the second substrate surface, and the first conductive layer and the first ground conductive strips located on both sides of the first central conductive strip form a first shielding cavity, and the first central conductive strip is located in the first shielding cavity.

With the development of the quantum chip technology, the number of the quantum bits on the quantum chip is gradually increased, when the number of the quantum bits on the quantum chip is large, the first coplanar waveguide transmission line 3 is formed on only one surface of the first substrate 1, which easily causes the transmission line to be too crowded, and is difficult to meet the signal transmission requirement of the quantum chip, and the first coplanar waveguide transmission line 3 is formed on the surface of the first substrate and the surface of the second substrate opposite to the first substrate 1, respectively, so that the packaging device provided by the embodiment can be used for packaging the quantum chips with more quantum bits, and the application range of the packaging device of the quantum chip is improved.

Fig. 5 is a cross-sectional view of a quantum chip packaging apparatus according to another embodiment of the present invention.

Referring to fig. 5, in some embodiments of the present invention, the quantum chip package further includes:

a second coplanar waveguide transmission line formed on a surface of the second substrate 6 on a side away from the first substrate 1, the second coplanar waveguide transmission line being made of a material such as a tantalum nitride film or an aluminum film that is coated on the second substrate 6, the tantalum nitride film or the aluminum film exhibiting a superconducting property at a low temperature, the second coplanar waveguide transmission line including a second central conduction band and second ground conduction bands located on both sides of the second central conduction band;

the second conducting layer is formed on the second grounding conducting strip, the second conducting layer and the second grounding conducting strip positioned on two sides of the second central conducting strip form a second shielding cavity, and the second central conducting strip is positioned in the second shielding cavity.

It should be particularly noted that, in this embodiment, the number of the second substrate 6 and the second conductive layer is not limited, when the number of the qubits on the quantum chip 2 is large, the first coplanar waveguide transmission line 3 is formed on only one surface of the first substrate 1, which easily causes the transmission line to be too crowded, and is difficult to meet the signal transmission requirement of the quantum chip, and according to the number of the qubits included in the quantum chip 2, multiple layers of the second substrate 6 and the second conductive layer having the second coplanar waveguide transmission line may be alternately stacked on the first substrate 1 to meet the signal transmission requirement of the qubits, so that the packaging device provided in this embodiment may be used for packaging the quantum chips with a larger number of the qubits, and further improves the application range of the packaging device of the quantum chips.

The embodiment of the present invention further provides a quantum device, including:

the quantum chip 2 is provided with a coplanar waveguide transmission line, and the coplanar waveguide transmission line comprises a central conduction band and grounding conduction bands positioned on two sides of the central conduction band;

in the packaging apparatus of a quantum chip according to the embodiment, the central conduction band is electrically connected to the first central conduction band, and the ground conduction band is electrically connected to the first ground conduction band, for example, the first central conduction band is electrically connected to the central conduction band through a bonding wire 4, the first ground conduction band is electrically connected to the ground conduction band through the bonding wire 4, and during an operation of the quantum chip, a qubit signal on the quantum chip 2 is transmitted through the central conduction band and the first central conduction band.

The embodiment of the present invention further provides a quantum device, including:

the quantum chip is provided with a coplanar waveguide transmission line, and the coplanar waveguide transmission line comprises a central conduction band and grounding conduction bands positioned on two sides of the central conduction band;

in the packaging apparatus of a quantum chip according to the above embodiment, the central conduction band is electrically connected to the first central conduction band and/or the second central conduction band, and the ground conduction band is electrically connected to the second ground conduction band and/or the second ground conduction band, for example, the first central conduction band and the second central conduction band are respectively electrically connected to the central conduction band through a bonding wire 4, the first ground conduction band and the second ground conduction band are respectively electrically connected to the ground conduction band through a bonding wire 4, and during an operation of the quantum chip 2, a qubit signal on the quantum chip 2 may be transmitted through the first central conduction band and the second central conduction band.

In the quantum device of this embodiment, the quantum chip 2 is packaged by using the packaging device of the quantum chip described in the above embodiment, so that mutual crosstalk between transmission signals of each qubit on the quantum chip 2 can be effectively prevented, and the stability of signal transmission is greatly improved.

The embodiment of the invention also provides a manufacturing method of the quantum chip packaging device, a coplanar waveguide transmission line is formed on the quantum chip 2, the coplanar waveguide transmission line comprises a central conduction band and grounding conduction bands positioned on two sides of the central conduction band, and the manufacturing method comprises the following steps:

s100, providing a first substrate 1, where the first substrate 1 may be used to bear a quantum chip, and exemplarily, a specific manner is that a groove for mounting the quantum chip is formed on a surface of the first substrate 1, and the quantum chip is disposed in the groove;

s200, forming a first coplanar waveguide transmission line 3 on the first substrate 1, wherein the first coplanar waveguide transmission line 3 includes a first central conductive strip and first ground conductive strips on two sides of the first central conductive strip, the first central conductive strip is electrically connected to the central conductive strip, the first ground conductive strip is electrically connected to the ground conductive strips, illustratively, the first central conductive strip is electrically connected to the central conductive strip through a bonding wire 4, the first ground conductive strip is electrically connected to the ground conductive strips through a bonding wire 4, the first coplanar waveguide transmission line 3 is made of a superconducting material, illustratively, in a specific manner, the first coplanar waveguide transmission line 3 is made of a material such as a tantalum nitride film or an aluminum film covering the first substrate 1, the tantalum nitride film or the aluminum film exhibits superconducting properties at low temperature, and the material of the first substrate 1 can be selected as required, for example, the first substrate 1 is a ceramic substrate, a silicon substrate, or the like.

S300, forming a first conductive layer on the first ground conduction band, where the first conductive layer and the first ground conduction band located at two sides of the first central conduction band form a first shielding cavity, and the first central conduction band is located in the first shielding cavity, exemplarily, a specific manner is that the first conductive layer is an integrally formed arch structure, and the first conductive layer is made of tin.

In one embodiment, a tantalum nitride film is formed on the ceramic substrate by a sputtering process or an atomic layer deposition process, and the first coplanar waveguide transmission line 3 is formed by etching on the tantalum nitride film.

In some embodiments of the present invention, the step of forming the first conductive layer on the first ground conduction band includes:

forming a first sub-layer 5 on the first ground conduction band on both sides of the first central conduction band, exemplarily, in a specific manner, the first sub-layer 5 is a tin pillar welded on the first ground conduction band, the tin pillar is symmetrically located on both sides of the first central conduction band, tin can exhibit superconducting performance at ultralow temperature, a first adhesion dielectric layer is formed between the first sub-layer 5 and the first ground conduction band, and the first adhesion dielectric layer is a metal such as gold or silver, so as to improve the connection strength between the first sub-layer 5 and the first ground conduction band;

providing a second substrate 6, wherein the second substrate 6 is made of the same material as the first substrate 1, and exemplarily, the second substrate 6 and the first substrate 1 are both ceramic substrates;

forming a second sub-layer 7 on a first surface of the second substrate 6 on the first substrate 1 side, where the second sub-layer 7 is made of a superconducting material, and the second sub-layer 7 is made of a tantalum nitride film or an aluminum film, for example;

and welding the first sublayer 5 and the second sublayer 7, wherein a second adhesion dielectric layer is formed between the first sublayer 5 and the second sublayer 7, and the second adhesion dielectric layer is made of metal such as gold or silver, so that the connection strength between the first sublayer 5 and the first grounding conduction band is improved.

According to the manufacturing method of the quantum chip packaging device, the first conducting layer with the crosstalk shielding function is formed inside the packaging device, and the purpose of isolating and shielding transmission signals of each quantum bit on the quantum chip can be achieved by using the quantum chip packaging device manufactured through the manufacturing method.

The construction, features and functions of the present invention are described in detail in the embodiments illustrated in the drawings, which are only preferred embodiments of the present invention, but the present invention is not limited by the drawings, and all equivalent embodiments modified or changed according to the idea of the present invention should fall within the protection scope of the present invention without departing from the spirit of the present invention covered by the description and the drawings.