阅读说明：本技术 红外线温度感测器 (Infrared temperature sensor ) 是由 王建勋 黄振堂 梁育志 古仁斌 于 2020-05-22 设计创作，主要内容包括：本发明提供了一种红外线温度感测器,包含一热电堆感测芯片,其包含一芯片衬底、一热电堆感测单元、一加热器以及一温度感测元件。热电堆感测单元设置于芯片衬底,以接收来自一标的物的红外线热辐射,并输出相对应的一红外线感测信号。加热器设置于芯片衬底,用以加热芯片衬底至一工作温度。温度感测元件设置于芯片衬底,用以感测芯片衬底的工作温度,并输出相对应的一工作温度信号。上述红外线温度感测器可在操作时维持热电堆感测单元于预设的工作温度,因此单点温度校正即可在广域环境温度下获得较准确的量测结果。(The invention provides an infrared temperature sensor, which comprises a thermopile sensing chip, a chip substrate, a thermopile sensing unit, a heater and a temperature sensing element. The thermopile sensing unit is disposed on the chip substrate to receive infrared thermal radiation from a target and output a corresponding infrared sensing signal. The heater is arranged on the chip substrate and used for heating the chip substrate to a working temperature. The temperature sensing element is arranged on the chip substrate and used for sensing the working temperature of the chip substrate and outputting a corresponding working temperature signal. The infrared temperature sensor can maintain the thermopile sensing unit at a preset working temperature during operation, so that a more accurate measurement result can be obtained under a wide-area environment temperature by single-point temperature correction.)

1. An infrared temperature sensor, comprising:

a package substrate including a plurality of first conductive contacts and a plurality of second conductive contacts electrically connected to the corresponding plurality of first conductive contacts;

a thermopile sensing chip secured to the package substrate by an insulating adhesive and electrically connected to the plurality of first conductive contacts, wherein the thermopile sensing chip comprises:

a chip substrate;

a first thermopile sensing unit disposed on the chip substrate for receiving infrared thermal radiation from a target and outputting a corresponding first infrared sensing signal;

a heater disposed on the chip substrate for heating the chip substrate to a working temperature; and

a temperature sensing element arranged on the chip substrate for sensing the working temperature and outputting a corresponding working temperature signal;

a cover body covering the thermopile sensing chip and the plurality of first conductive contacts, wherein the cover body comprises a window corresponding to the first thermopile sensing unit; and

and the filter is arranged on the window of the cover body so that the first thermopile sensing unit receives the infrared heat radiation in a specific wavelength range.

2. The infrared temperature sensor of claim 1, wherein the temperature sensing element comprises a platinum resistor, a polysilicon resistor, or a temperature sensing diode.

3. The infrared temperature sensor as set forth in claim 2, wherein the temperature sensing diode is formed by a base and an emitter of a bipolar transistor.

4. The infrared temperature sensor of claim 2, wherein the temperature sensing diode comprises a plurality of serially connected schottky diodes.

5. The infrared temperature sensor of claim 1, in which the heater comprises a metal resistor or a polysilicon resistor.

6. The infrared temperature sensor of claim 1, wherein the heater is disposed around the first thermopile sensing unit to control a cold end of the first thermopile sensing unit to the operating temperature.

7. The infrared temperature sensor of claim 1, wherein the temperature sensing element is disposed between the first thermopile sensing unit and the heater.

8. The infrared temperature sensor of claim 1, in which the chip substrate is a silicon substrate.

9. The infrared temperature sensor as set forth in claim 1, wherein the operating temperature is greater than an ambient temperature at which the infrared temperature sensor is operated.

10. The infrared temperature sensor of claim 1, wherein the operating temperature is in the range of 50-60 ℃.

11. The infrared temperature sensor as set forth in claim 1, wherein the operating temperatures are plural groups, and the heater is heated to the corresponding operating temperature according to an ambient temperature at which the infrared temperature sensor is operated.

12. The infrared temperature sensor of claim 1, wherein the first thermopile sensing units are plural and receive the infrared heat radiation in different wavelength ranges.

13. The infrared temperature sensor of claim 1, wherein the thermopile sensing chip further comprises a second thermopile sensing unit corresponding to the cover for receiving infrared thermal radiation from the cover.

14. The infrared temperature sensor as recited in claim 13, wherein the second thermopile sensing unit and the first thermopile sensing unit are connected in series in an inverted manner or independently output a corresponding second infrared sensing signal.

15. The infrared temperature sensor of claim 1, wherein the thermopile sensing chip further comprises:

a nonvolatile memory for storing a characteristic parameter of at least one of the first thermopile sensing unit and the temperature sensing element and the corresponding operating temperature; and

and the communication interface is electrically connected with the nonvolatile memory and is used for an external circuit to access the nonvolatile memory through the communication interface.

16. The infrared temperature sensor of claim 15, wherein the non-volatile memory includes one of a multi-time programmable memory and a one-time programmable memory.

17. The infrared temperature sensor of claim 15, wherein the non-volatile memory comprises a flash memory or a flash eeprom.

18. The infrared temperature sensor of claim 1, wherein a characteristic parameter of the temperature sensing element is obtained by wafer level temperature calibration.

Technical Field

The present invention relates to a temperature sensor, and more particularly to an infrared temperature sensor.

Background

Infrared temperature sensors have been widely used in non-contact thermometry products such as ear thermometer, which mostly work in room temperature environment (e.g. 5-35 ℃). An existing infrared temperature sensor is formed by a thermopile sensing chip and a thermistor for measuring ambient temperature, and is packaged in a metal case, such as a TO-5 package or a TO-46 package. Generally, an ear thermometer or a forehead thermometer including a thermopile sensing chip needs to be left standing for more than 30 minutes to be consistent with an ambient temperature, and a more accurate measurement result can be obtained.

In addition, the temperature measured by the infrared temperature sensor is the sum of the ambient temperature measured by the thermistor and the temperature difference measured by the thermopile sensing chip. The thermistor resistance-temperature table usually represents only a standard thermistor, and the thermistor error may be from a 25 ℃ resistance error or a characteristic curve Beta value error. Therefore, when the thermistor has a measurement error at a wide-area ambient temperature (e.g., -30-50 ℃), the accuracy of the temperature measured by the infrared temperature sensor is also affected. In order to control the measurement error within + -0.05 deg.C, the thermistor needs to be calibrated in multiple points.

To simplify the calibration process, U.S. Pat. No. US6,626,835B1 proposes a temperature sensor that uses a heater to heat the package of the thermopile sensor to maintain a constant operating temperature. According to the structure, the temperature sensor can accurately work under the wide-area environment temperature by correcting the working temperature. It will be appreciated that the package of the temperature sensor described above requires a suitable thermal insulation structure to avoid interference from outside temperatures.

Chinese patent CN107389206B proposes another thermopile sensor, in which a thermistor and a thermopile sensing chip are disposed on a heater, and then packaged by a package. According to the structure, the size of the thermopile sensor is large, and the thermal resistances between the thermistor and the thermopile sensing chip and the heater are possibly different to cause temperature difference, thereby causing measurement errors.

Therefore, it is a very important objective to simplify the calibration procedure of the infrared temperature sensor and obtain accurate measurement results under a wide range of ambient temperatures.

Disclosure of Invention

The invention provides an infrared temperature sensor, which is characterized in that a thermopile sensing unit, a temperature sensing element and a heater are arranged on the same chip substrate, the thermopile sensing unit can be maintained at a working temperature during operation through the high heat conduction characteristic of the chip substrate, and the temperature difference between the thermopile sensing unit and the temperature sensing element is small. Therefore, the infrared temperature sensor of the invention not only can simplify the correction procedure, but also can obtain more accurate measurement results under wide-area ambient temperature.

An infrared temperature sensor according to an embodiment of the present invention includes a package substrate, a thermopile sensing chip, a cover, and a filter. The package substrate includes a plurality of first conductive contacts and a plurality of second conductive contacts electrically connected to the corresponding plurality of first conductive contacts. The thermopile sensing chip is fixed on the packaging substrate by an insulating adhesive and is electrically connected with the first conductive contacts. The thermopile sensing chip includes a chip substrate, a first thermopile sensing unit, a heater, and a temperature sensing element. The first thermopile sensing unit is disposed on the chip substrate to receive infrared thermal radiation from a target and output a corresponding first infrared sensing signal. The heater is arranged on the chip substrate and used for heating the chip substrate to a working temperature. The temperature sensing element is arranged on the chip substrate and used for sensing the working temperature and outputting a corresponding working temperature signal. The cover body covers the thermopile sensing chip and the plurality of first conductive contacts, wherein the cover body comprises a window, and the window corresponds to the first thermopile sensing unit. The filter is arranged on the window of the cover body so that the first thermopile sensing unit receives infrared heat radiation in a specific wavelength range.

The purpose, technical content, features and effects of the present invention will be more readily understood by the following detailed description of the embodiments taken in conjunction with the accompanying drawings.

Drawings

Fig. 1 is a schematic view illustrating a thermopile sensing chip of an infrared temperature sensor according to an embodiment of the present invention.

FIG. 2 is a schematic view illustrating an infrared temperature sensor according to an embodiment of the present invention.

FIG. 3 is a schematic diagram of a thermopile sensing chip of an infrared temperature sensor according to another embodiment of the present invention.

FIG. 4 is a diagram illustrating an equivalent circuit of the thermopile sensing unit of the infrared temperature sensor of the embodiment shown in FIG. 3.

Fig. 5 is a schematic diagram illustrating an application example of the infrared temperature sensor according to the embodiment shown in fig. 3.

FIG. 6 is a schematic diagram of a thermopile sensing chip of an infrared temperature sensor according to another embodiment of the present invention.

Reference numerals:

11 packaging substrate

111 first conductive contact

112 second conductive contact

113 Heat insulation glue

12. 12a, 12b thermopile sensing chip

121 chip substrate

122 first thermopile sensing unit

122a, 122b thermopile sensing unit

1221 Hot end

1222 Cold end

123. 123a, 123b heater

124. 124a, 124b temperature sensing elements

125a, 125b, 125c conductive contacts

126a, 126b conductive contacts

127a, 127b conductive contacts

128 nonvolatile memory

129 communication interface

13 cover body

131 window

14 filter

A1, A2 and A3 amplifier

HT junction

IR infrared thermal radiation

MCU microcontroller

R1, R2 resistance

Rb bias resistor

TP measurement temperature

V bias voltage

Vref reference voltage

Detailed Description

The following detailed description of the embodiments of the invention is provided in connection with the accompanying drawings. Aside from the details given herein, this invention is capable of broad application to other embodiments and that various other substitutions, modifications, and equivalents may be made in the embodiments without departing from the scope of the invention as defined by the appended claims. In the description of the specification, numerous specific details are set forth in order to provide a more thorough understanding of the invention; however, the present invention may be practiced without some or all of these specific details. In other instances, well-known steps or elements have not been described in detail so as not to unnecessarily obscure the present invention. The same or similar elements in the drawings will be denoted by the same or similar symbols. It is noted that the drawings are for illustrative purposes only and do not represent actual sizes or quantities of elements, and some details may not be drawn completely to simplify the drawings.

Referring to fig. 1 and 2, an infrared temperature sensor according to an embodiment of the invention includes a package substrate 11, a thermopile sensing chip 12, a cover 13, and a filter 14. The package substrate 11 includes a plurality of first conductive contacts 111 and a plurality of second conductive contacts 112, wherein the plurality of second conductive contacts 112 are electrically connected to the corresponding plurality of first conductive contacts 111. For example, the package substrate 11 may be a ceramic substrate or a bt (bimoleimidetrizine) circuit carrier. The thermopile sensing chip 12 is fixed on the package substrate 11 by an insulating adhesive 113, so that thermal interference of the external environment temperature to the thermopile sensing chip 12 through the package substrate 11 can be avoided. It is understood that, in order to increase the thermal resistance between the package substrate 11 and the thermopile sensing chip 12, the thermopile sensing chip 12 may be fixed to the package substrate 11 by means of small-area adhesive dispensing. The thermopile sensing chip 12 is electrically connected to the plurality of first conductive contacts 111, so that the thermopile sensing chip 12 can communicate with the outside through the plurality of first conductive contacts 111 and the corresponding plurality of second conductive contacts 112. For example, the thermopile sensing chip 12 can be electrically connected to the first conductive contact 111 by wire bonding, but is not limited thereto. The thermopile sensing chip 12 can also be packaged in a planar smd (surface Mounting device).

Continuing the above description, the cover 13 covers the thermopile sensing chip 12 and the plurality of first conductive contacts 111 to protect the thermopile sensing chip 12 and the plurality of first conductive contacts 111. The cover 13 includes a window 131 so that the thermopile sensing chip 12 may receive infrared thermal radiation IR from a subject via the window 131. It should be noted that, in the embodiment shown in fig. 2, the cover 13 and a base define a receiving space for receiving the package substrate 11 and the thermopile sensing chip 12, but is not limited thereto. In an embodiment, the cover 13 may also be disposed on the package substrate 11 to define a receiving space with the package substrate 11 and to receive the thermopile sensing chip 12 and the conductive connection structure of the thermopile sensing chip 12 and the plurality of first conductive contacts 111. The filter 14 is disposed in the window 131 of the cover 13, so that the thermopile sensing chip 12 can only receive infrared radiation in a specific wavelength range through the window 131.

Referring to fig. 1, the thermopile sensing chip 12 includes a chip substrate 121, a first thermopile sensing unit 122, at least one heater 123, and at least one temperature sensing element 124. In one embodiment, the chip substrate 121 may be a silicon substrate. The first thermopile sensing unit 122 is disposed on the chip substrate 121 and corresponds to the window 131 of the cover 13. The first thermopile sensing unit 122 may receive infrared thermal radiation from the target through the window 131 and output a corresponding first infrared sensing signal. For example, the first infrared sensing signal generated by the first thermopile sensing unit 122 may be output to the outside through the conductive contacts 125a and 125 b. First thermopile sensing unit 122 includes a hot end 1221 and at least one cold end 1222. The hot end 1221 may be implemented by a floating plate; the other end of the connecting arm connecting the floating plate serves as the cold end 1222. The detailed structure of the thermopile sensing unit is well known to those skilled in the art and will not be described herein.

As described above, the heater 123 is disposed on the chip substrate 121 for heating the chip substrate 121 to an operating temperature. For example, external circuitry may activate the heater 123 via the conductive contacts 127a, 127b and control the operating temperature of the chip substrate 121. In one embodiment, the operating temperature is greater than an ambient temperature of the infrared temperature sensor of the present invention during operation. Taking the ambient temperature at the time of operation as 5-35 ℃ as an example, the heater 123 may heat the chip substrate 121 to a working temperature of 50-60 ℃. It will be appreciated that a plurality of different sets of operating temperatures may be preset to apply to different ambient temperatures during operation. For example, the heater 123 may heat the chip substrate 121 to a corresponding working temperature according to an ambient temperature at which the infrared temperature sensor is operated. For example, when the ambient temperature is 0-45 ℃ during operation, the working temperature of the chip substrate 121 may be set to 50 ℃, and the heater 123 heats the chip substrate 121 to 50 ℃ during operation; when the ambient temperature during operation is-20 to 0 deg.c, the operating temperature of the chip substrate 121 is set to 25 deg.c, and the heater 123 heats the chip substrate 121 to 25 deg.c during operation. In one embodiment, the heater 123 may be a metal resistor (e.g., aluminum, tungsten, or platinum) or a polysilicon resistor. It should be noted that, in the embodiment shown in fig. 1, the heater 123 is disposed around the first thermopile sensing unit 122, but the invention is not limited thereto, and the heater 123 may also be disposed on one or more sides of the first thermopile sensing unit 122.

Continuing with the above description, the temperature sensing element 124 is disposed on the chip substrate 121. In one embodiment, the temperature sensing element 124 is disposed between the first thermopile sensing unit 122 and the heater 123, that is, the temperature sensing element 124 is adjacent to the cold end 1222 of the first thermopile sensing unit 122 and the heater 123. The temperature sensing element 124 can sense an operating temperature of the chip substrate 121, and more particularly, an operating temperature of the cold end 1222 of the first thermopile sensing unit 122, and output a corresponding operating temperature signal. For example, the temperature sensing element 124 may output an operating temperature signal via the conductive contacts 126a, 126 b. The measured temperature of the target object can be calculated according to the first infrared sensing signal output by the first thermopile sensing unit 122 and the working temperature signal output by the temperature sensing element 124. In one embodiment, the temperature sensing element may be a platinum resistor, a polysilicon resistor, or a Thermal diode (Thermal diode). For example, the thermal diode is formed by the base and emitter of a bipolar transistor. In consideration of the compatibility and temperature characteristics of the semiconductor process, in one embodiment, the temperature sensing diode may be a plurality of Schottky diodes (Schottky diodes) connected in series.

According to the structure, when the infrared temperature sensor is operated, the chip substrate can be heated by the heater, and the cold end of the thermopile sensing unit can be maintained at the preset working temperature by virtue of the high heat conduction characteristic of the chip substrate. Therefore, the infrared temperature sensor of the present invention can be operated at a wide-area ambient temperature (e.g., -30-50 ℃) only by single-point temperature calibration, which not only greatly simplifies the calibration procedure, but also can rapidly and precisely measure the temperature of the target object without being interfered by the change of the ambient temperature.

Referring to fig. 3, the thermopile sensing chip 12a of the infrared temperature sensor of the present invention may include a plurality of thermopile sensing units 122a, 122 b. Each thermopile sensing unit 122a, 122b has a corresponding heater 123a, 123b and temperature sensing element 124a, 124 b. In one embodiment, by properly designing the cover 13 and/or the filter 14, the thermopile sensing units 122a and 122b can respectively receive infrared radiation of different wavelength ranges corresponding to different windows 131 and filters 14, so as to perform more accurate temperature measurement of the target object or serve as different temperature measurement applications.

In one embodiment, one of the thermopile sensing units 122a, 122b may also receive infrared thermal radiation of the cover 13 to compensate for interference caused by thermal radiation generated by the cover 13. For example, the thermopile sensing unit 122a serves as a first thermopile sensing unit, which is opposite to the window 131 of the cover 13 to receive infrared heat radiation of the subject, and the thermopile sensing unit 122b serves as a second thermopile sensing unit, which corresponds to the cover 13 to receive infrared heat radiation from the cover 13. Referring to FIG. 4, an equivalent circuit of the first thermopile sensing unit 122a and the second thermopile sensing unit 122b is shown, in which the resistor R1 is the internal resistance of the first thermopile sensing unit 122a, and the resistor R2 is the internal resistance of the second thermopile sensing unit 122 b. In one embodiment, the second thermopile sensing unit (122b) is connected in anti-phase in series with the first thermopile sensing unit (122 a). If the conductive contacts 125a and 125b output the infrared sensing signals generated by the first thermopile sensing unit 122a and the second thermopile sensing unit 122b, the heat radiation effect of the cover 13 is automatically reduced. Alternatively, the first infrared sensing signal generated by the first thermopile sensing unit (122a) is output through the conductive contacts 125a and 125c, and the second infrared sensing signal generated by the second thermopile sensing unit (122b) is output through the conductive contacts 125b and 125c, that is, the first infrared sensing signal and the second infrared sensing signal are independently output, and then processed by an external circuit to reduce the heat radiation effect of the cover 13, so that a more accurate measurement result can be obtained.

Referring to fig. 5, an application example of the infrared temperature sensor of the embodiment shown in fig. 3 is shown, wherein the thermopile sensing units 122a and 122b are a first thermopile sensing unit and a second thermopile sensing unit, respectively. The infrared temperature sensor is electrically connected with the microcontroller MCU through amplifiers A1, A2 and A3. The temperature sensing devices 124a and 124b are connected to the bias voltage V via the conductive contact 126a and the bias resistor Rb outputs the operating temperature signal to the amplifier a3, which is then buffered and amplified and fed to the MCU. After comparing the operating temperature signal with a set value, the microcontroller MCU controls the heaters 123a and 123b via the contact HT electrically connected to the conductive contact 127a to heat the cold ends of the thermopile sensing units 122a and 122b to the operating temperature.

Continuing with the above description, during measurement, the first infrared sensing signal generated by the first thermopile sensing unit (122a) is output to the amplifier a1 through the conductive contacts 125a and 125c, and is buffered and amplified and then fed to the micro controller MCU. Similarly, the second infrared sensing signal generated by the second thermopile sensing unit (122b) is output to the amplifier a2 through the conductive contacts 125b and 125c, and is fed to the micro controller MCU after being buffered and amplified, wherein the conductive contact 125c is connected to a reference voltage Vref. The microcontroller MCU can calculate and output the measured temperature TP of the target according to the first infrared sensing signal generated by the first thermopile sensing unit (122a), the second infrared sensing signal generated by the second thermopile sensing unit (122b), and the operating temperature signals generated by the temperature sensing elements 124a and 124 b.

Referring to fig. 6, in an embodiment, the thermopile sensing chip 12b includes a nonvolatile memory 128 and a communication interface 129 in addition to the structure of the thermopile sensing chip 12 shown in fig. 1. The non-volatile memory 128 may store a characteristic parameter of the first thermopile sensing unit and a corresponding operating temperature. In One embodiment, the non-volatile memory 128 may be a Multiple-Time Programmable (MTP) memory or a One-Time Programmable (OTP) memory. For example, the Multiple Time Programmable (MTP) memory may be a flash memory or a charged erasable programmable read only memory (EEPROM). The communication interface 129 is electrically connected to the nonvolatile memory 128, so that an external circuit can access the nonvolatile memory 128 through the communication interface 129. For example, the microcontroller MCU may access the non-volatile memory 128 via the communication interface 129. In one embodiment, the communication Interface 154 may be an Integrated Circuit Bus (I2C), a Universal Asynchronous Receiver/Transmitter (UART), a Serial Peripheral Interface (SPI), or a Universal Serial Bus (USB), analog voltage or logical IO output. In one embodiment, the thermopile sensing chip 12, the non-volatile memory 128, and the communication interface 129 may be disposed on a single chip substrate. Alternatively, the non-volatile memory 128 and the communication interface 129 may be separate dies that are packaged into the infrared temperature sensor of the present invention.

In one embodiment, the infrared temperature sensor of the present invention may employ Wafer level (Wafer level) temperature calibration to obtain the characteristic parameters of the temperature sensing element. The wafer-level temperature correction is to test the whole wafer (including the probe station) in a temperature-controlled environment, for example, the wafer chuck can be provided with a water channel to control the wafer temperature, so that the temperature characteristic parameters required by measurement can be simulated by specific environment temperature, therefore, the infrared temperature sensor can be automatically corrected, and the time cost of correction is further greatly saved. It is understood that the testing machine can store the characteristic parameters obtained during calibration in the nonvolatile memory through the communication interface, so that the subsequent calibration procedure of the infrared temperature sensor can be omitted.

In summary, the infrared temperature sensor of the present invention is provided with a thermopile sensing unit, a temperature sensing element and a heater on the same chip substrate, and the thermopile sensing unit can be maintained at a working temperature during operation by the high thermal conductivity of the chip substrate, and the temperature difference between the thermopile sensing unit and the temperature sensing element is small. Therefore, the infrared temperature sensor of the invention can not only complete the correction procedure by single-point temperature correction, but also realize the wafer-level temperature correction. In addition, the infrared temperature sensor of the invention can obtain the measurement result more quickly and accurately under the wide-area environmental temperature.

The above-described embodiments are merely illustrative of the technical spirit and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the content of the present invention and to implement the same, so that the scope of the claims of the present invention should not be limited by the above-described embodiments, and all equivalent changes and modifications made in the spirit of the present invention should be covered by the scope of the claims of the present invention.