阅读说明：本技术 一种金属化陶瓷板及其制备方法 (Metallized ceramic plate and preparation method thereof ) 是由 林方婷 赵安 张凯 胡含 于 2021-07-29 设计创作，主要内容包括：本申请公开了一种金属化陶瓷板及其制备方法。该金属化陶瓷板包括：陶瓷基板；金属导电层,设置在陶瓷基板的一侧,用于实现金属化陶瓷板的导电性。本申请采用陶瓷基板作为整个金属化陶瓷板的支撑结构,因陶瓷的刚性大于金属的刚性,因此能够提高整个金属化陶瓷板的刚性,增加其寿命,且因陶瓷的重量小于金属的重量,因此能够减小整个金属化陶瓷板的重量；且本申请通过金属导电层传输电信号,能够实现金属化陶瓷板的导电性。与传统的金属板比较,本申请金属化陶瓷板能够保证导电性能,且能够提高刚性,延长寿命,还能缩小重量,便于其轻便化设计。(The application discloses a metalized ceramic plate and a preparation method thereof. The metalized ceramic plate comprises: a ceramic substrate; and the metal conducting layer is arranged on one side of the ceramic substrate and is used for realizing the conductivity of the metalized ceramic plate. The ceramic substrate is used as a supporting structure of the whole metalized ceramic plate, the rigidity of the whole metalized ceramic plate can be improved and the service life of the metalized ceramic plate can be prolonged because the rigidity of the ceramic is greater than that of the metal, and the weight of the ceramic is less than that of the metal, so that the weight of the whole metalized ceramic plate can be reduced; and this application passes through the metal conducting layer transmission signal of telecommunication, can realize the electric conductivity of metallized ceramic plate. Compared with the traditional metal plate, the metalized ceramic plate can ensure the conductivity, improve the rigidity, prolong the service life, reduce the weight and facilitate the portable design.)

1. A metalized ceramic plate, comprising:

a ceramic substrate;

and the metal conducting layer is arranged on one side of the ceramic substrate and is used for realizing the conductivity of the metalized ceramic plate.

2. The metalized ceramic plate as recited in claim 1, further comprising: and the connecting layer is arranged between the ceramic substrate and the metal conducting layer and used for fixing the ceramic substrate and the metal conducting layer.

3. A metalized ceramic board as claimed in claim 2, wherein the bonding layer is Al₂O₃And (5) film layer.

4. The metalized ceramic plate as recited in claim 1, further comprising: and the first protective layer is arranged on one side of the metal conducting layer, which is deviated from the ceramic substrate.

5. The metalized ceramic plate as recited in claim 4, further comprising: and the second protective layer is arranged on one side of the first protective layer, which is deviated from the metal conducting layer.

6. A metalized ceramic plate as claimed in claim 5, which isIs characterized in that the metal conducting layer is a Cu film layer, the first protective layer is a Ni film layer, and the second protective layer is NiN_xA film layer, wherein x ranges from 0.5 to 1.0.

7. The metalized ceramic board as recited in claim 6, wherein the thickness of the connection layer is in a range of 20-100nm, the thickness of the metal conductive layer is in a range of 300-3000nm, the thickness of the first protective layer is in a range of 20-500nm, and the thickness of the second protective layer is in a range of 50-100 nm.

8. A ceramic board as claimed in claim 4, wherein said metal conductive layer is a CuNi film layer and said first protective layer is NiO_xA film layer, wherein x ranges from 0.2 to 0.5.

9. A ceramic board according to claim 8, wherein the thickness of the connection layer is in the range of 20-100nm, the thickness of the metal conductive layer is in the range of 300-3000nm, and the thickness of the first protective layer is in the range of 20-500 nm.

10. A method of making a metalized ceramic plate, the method comprising:

providing a ceramic substrate;

forming a connecting layer on the surface of one side of the ceramic substrate in a magnetron sputtering mode;

forming a metal conducting layer on the surface of one side, away from the ceramic substrate, of the connecting layer in a magnetron sputtering mode;

and forming a protective layer on the surface of one side of the metal conductive layer, which is far away from the connecting layer, by adopting a magnetron sputtering mode.

Technical Field

The application relates to the technical field of novel plates, in particular to a metalized ceramic plate and a preparation method thereof.

Background

Along with the continuous development of electronic technology, the types and functions of electronic products are more and more abundant and diverse, and along with the improvement of the living standard of people, the requirements on the appearance, the functions and the like of the electronic products are higher and higher, and the requirements on the size, the weight, the anti-falling performance and the like of the electronic products are also higher and higher.

The control circuit is the brain of the electronic device and the conductive plate is the carrier of the control circuit. The rigidity and strength of the current popular metal plate as the conductive plate have defects, and particularly for light-weight products, the metal plate needs to be made very thin, so that the metal plate becomes flexible and cannot support the rigid structure of the product.

Disclosure of Invention

The technical problem that this application mainly solved is how to realize a ceramic plate that can electrically conduct to replace current metal current conducting plate, and then improve the rigidity of current conducting plate and reduce its weight.

In order to solve the technical problem, the application adopts a technical scheme that: a metalized ceramic plate is provided. The metalized ceramic plate comprises: a ceramic substrate; and the metal conducting layer is arranged on one side of the ceramic substrate and is used for realizing the conductivity of the metalized ceramic plate.

In a particular embodiment, the metalized ceramic plate further comprises: and the connecting layer is arranged between the ceramic substrate and the metal conducting layer and used for fixing the ceramic substrate and the metal conducting layer.

In one embodiment, the connection layer is Al₂O₃And (5) film layer.

In a particular embodiment, the metalized ceramic plate further comprises: and the first protective layer is arranged on one side of the metal conducting layer, which is deviated from the ceramic substrate.

In a particular embodiment, the metalized ceramic plate further comprises: and the second protective layer is arranged on one side of the first protective layer, which is deviated from the metal conducting layer.

In a specific embodiment, the metal conductive layer is a Cu film, the first protective layer is a Ni film, and the second protective layer is a NiN film_xA film layer, wherein x ranges from 0.5 to 1.0.

In a specific embodiment, the thickness of the connection layer is 20-100nm, the thickness of the metal conductive layer is 300-3000nm, the thickness of the first protection layer is 20-500nm, and the thickness of the second protection layer is 50-100 nm.

In one embodiment, the metal conductive layer is a CuNi film layer, and the first protection layer is NiO_xA film layer, wherein x ranges from 0.2 to 0.5.

In a specific embodiment, the thickness of the connection layer is 20-100nm, the thickness of the metal conductive layer is 300-3000nm, and the thickness of the first protection layer is 20-500 nm.

In order to solve the technical problem, the application adopts a technical scheme that: a method for preparing a ceramic plate is provided. The preparation method of the metalized ceramic plate comprises the following steps: providing a ceramic substrate; forming a metal conducting layer on the surface of one side of the ceramic substrate in a magnetron sputtering mode; and forming a protective layer on the surface of one side, which is far away from the ceramic substrate, of the metal conducting layer in a magnetron sputtering mode.

The beneficial effect of this application is: be different from prior art, this application metalized ceramic plate includes ceramic substrate and sets up the metal conducting layer in ceramic substrate one side, and the metal conducting layer is used for realizing the electric conductivity of metalized ceramic plate. In this way, the ceramic substrate is used as the support structure of the whole metalized ceramic plate, the rigidity of the whole metalized ceramic plate can be improved and the service life of the metalized ceramic plate can be prolonged because the rigidity of the ceramic is greater than that of the metal, and the weight of the ceramic is less than that of the metal, so that the weight of the whole metalized ceramic plate can be reduced; and this application passes through the metal conducting layer transmission signal of telecommunication, can realize the electric conductivity of metallized ceramic plate. Compared with the traditional metal plate, the metalized ceramic plate can ensure the conductivity, improve the rigidity, prolong the service life, reduce the weight and facilitate the portable design.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts. Wherein:

FIG. 1 is a schematic structural view of an embodiment of a metalized ceramic plate of the present application;

FIG. 2 is a schematic structural view of another embodiment of a metallized ceramic plate of the present application;

FIG. 3 is a schematic structural view of yet another embodiment of a metalized ceramic plate according to the present application;

fig. 4 is a schematic flow chart of an embodiment of a method for making a metalized ceramic plate according to the present application.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

The terms "first" and "second" in this application are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. In the description of the present application, "plurality" means at least two, e.g., two, three, etc., unless explicitly specifically limited otherwise. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements listed, but may alternatively include other steps or elements not listed, or inherent to such process, method, article, or apparatus.

The present application first proposes a ceramic plate, as shown in fig. 1, and fig. 1 is a schematic structural view of an embodiment of the metalized ceramic plate of the present application. The metalized ceramic plate 10 of the present embodiment includes: a ceramic substrate 11 and a metal conductive layer 12; a metal conductive layer 12 is provided on one side of the ceramic substrate 11 for achieving the conductivity of the metalized ceramic plate 10.

The ceramic substrate 11 of the present embodiment may be an alumina substrate, an aluminum nitride substrate, a silicon nitride substrate, or the like.

Unlike the prior art, the present embodiment uses the ceramic substrate 11 as a supporting structure for the entire metalized ceramic plate 10, and since the rigidity of the ceramic is greater than that of the metal, the rigidity of the entire metalized ceramic plate 10 can be improved, and the lifetime thereof can be increased, and since the weight of the ceramic is less than that of the metal, the weight of the entire metalized ceramic plate 10 can be reduced; in addition, the present embodiment can realize the conductivity of the metalized ceramic plate 10 by transmitting the electrical signal through the metal conductive layer 12. Compared with the conventional metal plate, the metalized ceramic plate 10 of the present embodiment can ensure the conductivity, improve the rigidity, prolong the service life, reduce the weight, and facilitate the lightweight design thereof.

Optionally, the metalized ceramic plate 10 of the present embodiment further comprises: a connecting layer 13; the connection layer 13 is provided between the ceramic substrate 11 and the metal conductive layer 12, and fixes the ceramic substrate 11 and the metal conductive layer 12.

Alternatively, the connection layer 13 of the present embodiment may be Al₂O₃A film layer; al (Al)₂O₃The film layer has a large biting force for the ceramic substrate 11, and can improve the bonding force between the ceramic substrate 11 and the metal conductive layer 12.

Alternatively, the connection layer 13 may be a bonding layer having a structure and a composition close to those of the ceramic substrate 11, so as to improve the bonding force between the ceramic substrate 11 and the metal conductive layer 12.

For example, the connection layer 13 of the present embodiment may be Al₂O₃The composition of the film layer, the ceramic substrate 11 may be Al₂O₃。

In other embodiments, the composition of the connection layer may be adjusted according to the composition of the ceramic substrate; or the connecting layer can adopt an adhesive sticking layer and the like.

The present application further provides another embodiment of a metallized ceramic substrate, as shown in fig. 2, fig. 2 is a schematic structural diagram of another embodiment of the metallized ceramic plate of the present application. The metalized ceramic plate 20 of the present application comprises: a ceramic substrate 21, a metal conductive layer 22, and a first protective layer 23; wherein, the metal conducting layer 22 is arranged on one side of the ceramic substrate 21 and is used for realizing the conductivity of the metalized ceramic plate 20; a first protective layer 23 is arranged on the side of the metal conductive layer 22 facing away from the ceramic substrate 21 for protecting the metal conductive layer 22.

The ceramic substrate 21 of the present embodiment may be an alumina substrate, an aluminum nitride substrate, a silicon nitride substrate, or the like.

Further, the metalized ceramic board 20 of the present embodiment further includes: a tie layer 24; the connection layer 24 is provided between the ceramic substrate 21 and the metal conductive layer 22, and fixes the ceramic substrate 21 and the metal conductive layer 22.

Alternatively, the connection layer 24 of the present embodiment may be Al₂O₃A film layer; al (Al)₂O₃The film layer has a large biting force with respect to the ceramic substrate 21, and can improve the bonding force between the ceramic substrate 21 and the metal conductive layer 22.

Alternatively, the connection layer 24 may be a bonding layer having a structure and a composition similar to those of the ceramic substrate 21, so as to improve the bonding force between the ceramic substrate 21 and the metal conductive layer 22.

For example, the connection layer 24 of the present embodiment may be Al₂O₃The composition of the film layer and the ceramic substrate 21 may be Al₂O₃。

In other embodiments, the composition of the connection layer may be adjusted according to the composition of the ceramic substrate; or the connecting layer can adopt an adhesive sticking layer and the like.

Optionally, the metal conductive layer 22 of the present embodiment may be a CuNi film layer; the weight percent of Cu and Ni in the CuNi film layer is 95: 5-80: 20%. The CuNi film layer has good conductivity and high stability, so that the conductivity of the metalized ceramic plate 20 can be ensured.

Optionally, the first protection layer 23 of this embodiment is a non-metal protection layer, and the non-metal protection layer may be NiO_xA film layer, wherein x ranges from 02 to 0.5. Of course, in other embodiments, other compounds of Ni may also be used as the non-metal protective layer of the Ni film layer.

The present embodiment employs the ceramic substrate 21 as a support structure for the entire metalized ceramic plate 20, which can improve the rigidity of the entire metalized ceramic plate 20 and increase the lifetime thereof because the rigidity of the ceramic is greater than that of the metal, and can reduce the weight of the entire metalized ceramic plate 20 because the weight of the ceramic is less than that of the metal; in addition, the present embodiment can realize the conductivity of the metalized ceramic plate 20 by transmitting the electrical signal through the metal conductive layer 22.

The metalized ceramic board 20 of the present embodiment is different from the metalized ceramic substrate 10 described above in that the metalized ceramic board 20 of the present embodiment further includes: the first protective layer 23 can prevent the metal conductive layer 22 from being contaminated and corroded by the outside. The first protective layer 23 serves as a metal protective layer and an oxidation and corrosion resistant layer to provide assurance of stability and durability of the metalized ceramic plate 20.

Optionally, the thickness range of the connection layer 24 of the embodiment may be 20-100nm, and the thickness range may specifically be 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, and the like; the thickness of the metal conductive layer 22 may be 300-3000nm, and the thickness may be 300nm, 500nm, 1000nm, 1500nm, 2000nm, 2500nm, 3000nm, etc.; the thickness of the first protective layer 23 may be 20-500nm, and the thickness may be 20nm, 50nm, 100nm, 150nm, 300nm, 400nm, 500nm, 100nm, etc.

The present application further proposes a metalized ceramic plate according to another embodiment, as shown in fig. 3, and fig. 3 is a schematic structural view of another embodiment of the metalized ceramic plate according to the present application. The metalized ceramic plate 30 of the present application comprises: a ceramic substrate 31, a metal conductive layer 32, a first protective layer 33, and a second protective layer 35; wherein, the metal conducting layer 32 is arranged at one side of the ceramic substrate 31 for realizing the conductivity of the metalized ceramic plate 30; the first protective layer 33 is arranged on one side of the metal conductive layer 32, which is far away from the ceramic substrate 31, and is used for protecting the metal conductive layer 32; the second protective layer 35 is arranged on the side of the first protective layer 33 facing away from the metal conductive layer 32.

The ceramic substrate 31 of the present embodiment may be an alumina substrate, an aluminum nitride substrate, a silicon nitride substrate, or the like.

Further, the metalized ceramic board 30 of the present embodiment further includes: a connecting layer 34; the connection layer 34 is provided between the ceramic substrate 31 and the metal conductive layer 32, and fixes the ceramic substrate 31 and the metal conductive layer 32.

Alternatively, the connection layer 34 of the present embodiment may be Al₂O₃A film layer; al (Al)₂O₃The film layer has a large biting force with respect to the ceramic substrate 31, and can improve the bonding force between the ceramic substrate 31 and the metal conductive layer 32.

Alternatively, the connection layer 34 may be a bonding layer having a structure and a composition similar to those of the ceramic substrate 31, so as to improve the bonding force between the ceramic substrate 31 and the metal conductive layer 32.

For example, the connection layer 34 of the present embodiment may be Al₂O₃The composition of the film layer, the ceramic substrate 31 may be Al₂O₃。

In other embodiments, the composition of the connection layer may be adjusted according to the composition of the ceramic substrate; or the connecting layer can adopt an adhesive sticking layer and the like.

Optionally, the metal conductive layer 32 of the present embodiment may be a Cu film layer. The Cu film layer has good conductivity and low price, so that the conductivity of the metalized ceramic plate 30 can be ensured; of course, in other embodiments, an alloy film layer of Cu and other metals or other metal film layers may be used instead of the Cu film layer of this embodiment.

Optionally, the first protection layer 33 of this embodiment is a metal protection layer, and the metal protection layer may be a Ni film. Of course, in other embodiments, the metal protection layer may also be implemented by using a chromium film layer, a titanium film layer, or an alloy film layer.

Optionally, the second protective layer 35 of this embodiment is a non-metal protective layer, and the non-metal protective layer may be NiN_xA film layer, wherein x ranges from 0.5 to 1.0. Of course, in other embodiments, other compounds of Ni may also be used as the non-metal protective layer of the Ni film layer.

The present embodiment employs the ceramic substrate 31 as a support structure for the entire metalized ceramic plate 30, which can improve the rigidity of the entire metalized ceramic plate 30 and increase the lifespan thereof because the rigidity of the ceramic is greater than that of the metal, and can reduce the weight of the entire metalized ceramic plate 30 because the weight of the ceramic is less than that of the metal; in addition, the present embodiment can realize the conductivity of the metalized ceramic plate 30 by transmitting the electrical signal through the metal conductive layer 32.

The metalized ceramic board 30 of the present embodiment is different from the metalized ceramic substrate 20, in that the metalized ceramic board 30 of the present embodiment further includes: the second protective layer 35, the second protective layer 35 serves as a passivation layer and an oxidation and corrosion resistant layer to provide a guarantee for the stability and durability of the metalized ceramic plate 30.

Optionally, the thickness range of the connection layer 34 of the embodiment may be 20-100nm, and the thickness range may specifically be 20nm, 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, and the like; the thickness of the metal conductive layer 32 may be 300-3000nm, and the thickness may be 300nm, 500nm, 1000nm, 1500nm, 2000nm, 2500nm, 3000nm, etc.; the thickness range of the first protective layer 33 may be 20-500nm, and the thickness range may be 20nm, 50nm, 100nm, 150nm, 300nm, 400nm, 500nm, 100nm, and the like; the thickness of the second passivation layer 35 may be 50-100nm, and the thickness may be 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, or the like.

For example, Al₂O₃The thickness of the film layer is 50nm, the thickness of the Cu film layer is 3000nm, the thickness of the Ni film layer is 300nm and the NiN_xThe thickness of the film layer was 100 nm.

The metalized ceramic plate 30 of the present embodiment adopts two protective layers, which can further improve the stability of the metal conductive layer 32; the metalized ceramic plate 20 of the above embodiment can reduce the thickness of the metalized ceramic plate 20 by using only one protective layer.

The metalized ceramic board 30 of the present embodiment is different from the metalized ceramic substrate 20 in that the conductive layer 32 of the present embodiment is a Cu film, which has better conductivity than a CuNi film.

The above-mentioned embodiments of the metallized ceramic plate of the present application employ metal conductive layers of different compositions and protective layers thereof, all of which can have the following properties:

adhesion force: 100/100 (no drop off in the hundred grid test); surface resistance: 0.015 Ohm/Square (Ohm/Square); high temperature and high humidity test: 500Hrs, 80 ℃, 80RH percent and the resistance value change rate is less than 5 percent; and (3) acetic acid test: 5 mol%, 2Hrs, and the resistance value change rate is less than 5%.

The metalized ceramic plate is a conductive plate metalized on the surface of a ceramic structure material, has the characteristic of strong structural rigidity as a substitute of a pure metal material, has the conductive characteristic of the metal material, and is a preferred scheme for rigidizing electronic products.

The metalized ceramic plate has the characteristics of light weight, high structural rigidity, good conductivity, strong durability and the like.

The present application further provides a method for preparing a metalized ceramic plate, as shown in fig. 4, and fig. 4 is a schematic flow chart of an embodiment of the method for preparing a metalized ceramic plate of the present application. The preparation method of the metalized ceramic plate of the embodiment comprises the following steps:

step S41: a ceramic substrate is provided.

In an application scenario, Al₂O₃The substrate was cleaned with acetone and alcohol.

Step S42: and forming a connecting layer on one side surface of the ceramic substrate by adopting a magnetron sputtering mode.

Adopting a magnetron sputtering mode and adopting Ar and O₂Applying a voltage to Ar and O as working gas₂Discharging, Ar + ion and O + ion bombarding the surface of the Al target to convert Al₂O₃Deposition of nano-groups to Al₂O₃On the substrate, Al is formed₂O₃A film layer, which is deposited for a certain time to control Al₂O₃The thickness of the film layer is 20-100 nm.

Step S43: and forming a metal conducting layer on the surface of one side of the connecting layer, which is far away from the ceramic substrate, by adopting a magnetron sputtering mode.

Adopting a magnetron sputtering mode, using Ar as working gas, applying voltage to discharge the Ar, bombarding the surface of the Cu target by Ar + ions to deposit Cu nano groups on Al₂O₃Film layer deviating from Al₂O₃A pure Cu film layer is formed on one side surface of the substrate, and the thickness of the Cu film layer is controlled to be 300-3000nm after deposition for a certain time.

Step S44: and forming a protective layer on the surface of one side of the metal conductive layer, which is far away from the connecting layer, by adopting a magnetron sputtering mode.

The passivation layer of the present embodiment includes a Ni film and NiN_xAnd (5) film layer.

Adopting a magnetron sputtering mode, taking Ar as working gas, applying voltage to discharge the Ar, bombarding the surface of the Ni target by Ar + ions to deposit Ni nano groups on the Cu film layer to deviate from Al₂O₃Forming a Ni film layer on one side surface of the film layer, and controlling the thickness of the Ni film layer to be 20-500nm after a certain deposition time.

Adopting a magnetron sputtering mode and adopting Ar and N₂Jointly used as working gas, applying voltage to Ar and N₂Discharging, Ar + ion and N + ion bombarding Ni target surface to make NiN_xThe nano group is deposited on the surface of the Ni film layer, which is far away from the Cu film layer, to form NiN_xA film layer, depositing for a certain time, and controlling NiN_xThe thickness of the film layer is 20-100 nm.

Each film layer may employ a fibrous substrate as a carrier.

In another embodiment, the metal is conductiveThe layer is a CuNi film layer, and the protective layer is NiO_xThe preparation method of the film layer and the corresponding metalized ceramic plate is as follows: mixing Al₂O₃Cleaning the substrate with acetone and alcohol;

adopting a magnetron sputtering mode and adopting Ar and O₂Applying a voltage to Ar and O as working gas₂Discharging, Ar + ion and O + ion bombarding the surface of the Al target to convert Al₂O₃Deposition of nano-groups to Al₂O₃On the substrate, Al is formed₂O₃A film layer, which is deposited for a certain time to control Al₂O₃The thickness of the film layer is 20-100 nm; adopting a magnetron sputtering mode, using Ar as working gas, applying voltage to discharge the Ar, bombarding the surface of a CuNi alloy (Cu: Ni wt%: 95: 5% -80: 20%) target by Ar + ions to deposit the nano-groups of the alloy on Al₂O₃Substrate facing away from Al₂O₃Forming a CuNi film layer on the film layer, and controlling the thickness of the CuNi film layer to be 300-3000nm after deposition for a certain time; adopting magnetron sputtering mode, using Ar as working gas, applying voltage to discharge Ar, bombarding NiO with Ar + ions_xTarget surface to remove NiO_xThe nano group is deposited on the CuNi film layer to deviate from Al₂O₃NiO is formed on one side surface of the film layer_xA film layer, the deposition time of a certain time is passed, NiO is controlled_xThe thickness of the film layer is 20-500 nm.

Each film layer may employ a fibrous substrate as a carrier.

Be different from prior art, this application metalized ceramic plate includes ceramic substrate and sets up the metal conducting layer in ceramic substrate one side, and the metal conducting layer is used for realizing the electric conductivity of metalized ceramic plate. In this way, the ceramic substrate is used as the support structure of the whole metalized ceramic plate, the rigidity of the whole metalized ceramic plate can be improved and the service life of the metalized ceramic plate can be prolonged because the rigidity of the ceramic is greater than that of the metal, and the weight of the ceramic is less than that of the metal, so that the weight of the whole metalized ceramic plate can be reduced; and this application passes through the metal conducting layer transmission signal of telecommunication, can realize the electric conductivity of metallized ceramic plate. Compared with the traditional metal plate, the metalized ceramic plate can ensure the conductivity, improve the rigidity, prolong the service life, reduce the weight and facilitate the portable design.

The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.