阅读说明：本技术 一种氧化物平面靶及其制备方法 (Oxide plane target and preparation method thereof ) 是由 李开杰 邵学亮 张来稳 司振华 朱刘 于 2021-09-15 设计创作，主要内容包括：本发明公开了一种氧化物平面靶及其制备方法。所述制备方法包括如下步骤：(1)将氧化镨、氧化铟、氧化镓和氧化锌粉末混合,研磨制浆得到混合浆料,将混合浆料进行喷雾造粒,得到造粒粉；(2)将造粒粉进行模压、冷等静压成型得到靶材素坯；(3)将靶材素坯的棱和顶角打磨为R角；(4)将打磨后的靶材素坯烧结,得到氧化物平面靶。本发明将靶材素坯的棱和顶角打磨为R角,使靶材素坯在烧结过程中受力均匀,提高烧结成品率,也提高氧化物平面靶的载流子迁移率和相对密度。(The invention discloses an oxide plane target and a preparation method thereof. The preparation method comprises the following steps: (1) mixing praseodymium oxide, indium oxide, gallium oxide and zinc oxide powder, grinding and pulping to obtain mixed slurry, and performing spray granulation on the mixed slurry to obtain granulated powder; (2) carrying out mould pressing and cold isostatic pressing on the granulated powder to obtain a target biscuit; (3) polishing the edges and the vertex angles of the target biscuit into R angles; (4) and sintering the polished target biscuit to obtain the oxide plane target. The invention polishes the edges and the vertex angles of the target material biscuit into R angles, so that the target material biscuit is uniformly stressed in the sintering process, the sintering yield is improved, and the carrier mobility and the relative density of the oxide plane target are also improved.)

1. The preparation method of the oxide planar target is characterized by comprising the following steps of:

(1) mixing praseodymium oxide, indium oxide, gallium oxide and zinc oxide powder, adding water, grinding and pulping to obtain mixed slurry, and performing spray granulation on the mixed slurry to obtain granulated powder;

(2) molding the granulated powder, and performing cold isostatic pressing to obtain a target biscuit;

(3) polishing the edges and the vertex angles of the target biscuit into R angles;

(4) and sintering the polished target biscuit to obtain the oxide plane target.

2. The method of claim 1, wherein the mass ratio of praseodymium oxide, indium oxide, gallium oxide and zinc oxide is praseodymium oxide: indium oxide: gallium oxide: 0.1-8% of zinc oxide: 40-92: 10-28: 10-25.

3. The method for preparing the oxide flat target according to claim 1, wherein the praseodymium oxide, the indium oxide, the gallium oxide and the zinc oxide have a purity of 4N or more and a particle size of 120 to 250 nm.

4. The method for producing an oxide flat target according to claim 1, wherein in the step (1), the particle diameter D50 of the mixed slurry is 0.1 to 1 μm; the particle diameter D50 of the granulated powder is 15-80 μm.

5. The method for producing an oxide flat target according to claim 1, wherein in the step (2), the pressure of the molding is 20 to 60MPa, and the time of the molding is 60 to 120 s; the pressure of the cold isostatic pressing is 300-450MPa, and the time of the isostatic pressing is 60-120 s.

6. The method for preparing the oxide flat target according to claim 1, wherein in the step (4), the sintering is specifically: under the air atmosphere, the temperature is raised to 1000 ℃ at the heating rate of 0.2-0.8 ℃/min, then raised to 1450-.

7. An oxide flat target produced by the production method for an oxide flat target according to any one of claims 1 to 6.

Technical Field

The invention belongs to the technical field of target material preparation, and particularly relates to an oxide planar target and a preparation method thereof.

Background

At present, the main preparation methods of domestic oxide planar targets are a hot isostatic pressing method, a conventional sintering method, a vacuum hot pressing method and the like, but by adopting the method, the oxide planar targets with the relative density of more than 97 percent can be obtained, but the method has the defects that: the yield of the oxide plane target material is low and is not easy to control, a large amount of waste materials are easy to generate, the production efficiency is low, the cost is high, and a large amount of materials are wasted. Therefore, it is necessary to develop a process for producing a large-sized oxide planar target with high yield and high carrier mobility.

Disclosure of Invention

In view of the above-mentioned disadvantages of the prior art, the present invention provides an oxide planar target and a method for preparing the same. The oxide plane target prepared by the invention has high carrier mobility and high yield.

In order to achieve the purpose, the invention adopts the technical scheme that: a method for preparing an oxide planar target comprises the following steps:

(1) mixing praseodymium oxide, indium oxide, gallium oxide and zinc oxide powder, adding water, grinding and pulping to obtain mixed slurry, and performing spray granulation on the mixed slurry to obtain granulated powder;

(2) carrying out mould pressing and cold isostatic pressing on the granulated powder to obtain a target biscuit;

(3) polishing the edges and the vertex angles of the target biscuit into R angles;

(4) and sintering the polished target biscuit to obtain the oxide plane target.

After the target biscuit is subjected to cold isostatic pressing, the surface of the target biscuit microscopically presents a wave shape, so that the stress in the target biscuit sintering process is uneven, the target is easy to crack, and the yield is low. The invention polishes the edges and the top corners of the target material biscuit into R corners, so that the target material biscuit is uniformly stressed in the sintering process, the sintering yield is improved, and the carrier mobility of the oxide plane target is also improved.

In a preferred embodiment of the present invention, the mass ratio of the praseodymium oxide, the indium oxide, the gallium oxide, and the zinc oxide is praseodymium oxide: indium oxide: gallium oxide: 0.1-8% of zinc oxide: 40-92: 10-28: 10-25.

In a preferred embodiment of the present invention, the praseodymium oxide, indium oxide, gallium oxide and zinc oxide have a purity of 4N or more and a particle size of 120 to 250 nm.

In the step (1), the particle size D50 of the mixed slurry is 0.1 to 1 μm; the particle diameter D50 of the granulated powder is 15-80 μm.

The mixed slurry has the advantages of small particle size, difficulty in preparation, high requirement on equipment and increased production cost; the too large particle size of the mixed slurry can cause the particle size of the granulated powder to be too large, and the relative density is reduced, so that the carrier mobility is reduced, and the qualification rate of the product is also influenced.

When the particle size D50 of the mixed slurry is 0.1-1 mu m and the particle size D50 of the granulated powder is 15-80 mu m, the prepared oxide plane target has high yield, the relative density of the oxide plane target is more than 97 percent, and the mobility of film-forming carriers of the target is 30-40cm²/V·s。

As a preferred embodiment of the present invention, in the step (2), the pressure of the molding is 20 to 60MPa, and the time of the molding is 60 to 120 s; the pressure of the cold isostatic pressing is 300-450MPa, and the time of the isostatic pressing is 60-120 s.

As a preferred embodiment of the present invention, in the step (4), the sintering specifically includes: under the air atmosphere, the temperature is raised to 1000 ℃ at the heating rate of 0.2-0.8 ℃/min, then raised to 1450-.

The invention uses air atmosphere, on one hand, oxygen vacancy can be generated all the time; on the other hand, air is more economical and less costly than pure oxygen.

As a preferred embodiment of the present invention, the oxide planar targets are machined and bonded to obtain oxide planar targets of different sizes.

The invention also claims an oxide plane target prepared by the preparation method of the oxide plane target.

Compared with the prior art, the invention has the beneficial effects that: the invention polishes the edges and the vertex angles of the target material biscuit into R angles, so that the target material biscuit is uniformly stressed in the sintering process, the sintering yield is improved, and the carrier mobility and the relative density of the oxide plane target are also improved.

Detailed Description

To better illustrate the objects, aspects and advantages of the present invention, the present invention will be further described with reference to specific examples.

In the embodiment and the comparative example of the invention, the praseodymium oxide, the indium oxide, the gallium oxide and the zinc oxide have the purity of more than 4N and the particle size of 120-250 nm.

Example 1

The invention relates to a preparation method of an oxide plane target, which comprises the following steps:

(1) mixing 0.5kg of praseodymium oxide, 55.6kg of indium oxide, 15.8kg of gallium oxide and 14.3kg of zinc oxide powder, grinding and pulping to obtain mixed slurry with the particle size D50 of 0.431 mu m, and carrying out spray granulation on the mixed slurry to obtain granulated powder with the particle size D50 of 25.3 mu m;

(2) molding the granulated powder for 60s under the pressure of 50MPa, and then carrying out cold isostatic pressing for 60s under the pressure of 380MPa to obtain a target biscuit;

(3) polishing the edges and the vertex angles of the target biscuit into R angles;

(4) sintering the polished target biscuit to obtain an oxide plane target; the sintering process comprises the following steps: in the air atmosphere, firstly heating to 1000 ℃ at the heating rate of 0.4 ℃/min, then heating to 1450 ℃ at the heating rate of 1 ℃/min, preserving the heat for 12 hours, and finally cooling to room temperature at the cooling rate of 1.0 ℃/min; an oxide planar target is obtained.

The sintering yield of the oxide planar target is 85%, the relative density is 97.63%, the size of 870 × 380 × 8mm is obtained by mechanical processing, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 32.2cm²/V·s。

Example 2

The invention relates to a preparation method of an oxide plane target, which comprises the following steps:

(1) mixing 0.5kg of praseodymium oxide, 55.6kg of indium oxide, 15.8kg of gallium oxide and 14.3kg of zinc oxide powder, grinding and pulping to obtain mixed slurry with the particle size D50 of 0.452 mu m, and carrying out spray granulation on the mixed slurry to obtain granulated powder with the particle size D50 of 23.7 mu m;

(2) molding the granulated powder for 120s under the pressure of 35MPa, and then carrying out cold isostatic pressing for 120s under the pressure of 420MPa to obtain a target biscuit;

(3) polishing the edges and the vertex angles of the target biscuit into R angles;

(4) sintering the polished target biscuit to obtain an oxide plane target; the sintering process comprises the following steps: in the air atmosphere, firstly heating to 1000 ℃ at the heating rate of 0.5 ℃/min, then heating to 1480 ℃ at the heating rate of 1.5 ℃/min, preserving the heat for 11 hours, and finally cooling to room temperature at the cooling rate of 1.0 ℃/min; an oxide planar target is obtained.

The sintering yield of the oxide planar target is 87%, the relative density is 97.56%, the oxide planar target is obtained by mechanical processing, the size of 870 × 380 × 8mm is obtained, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 31.6cm²/V·s。

Example 3

The invention relates to a preparation method of an oxide plane target, which comprises the following steps:

(1) mixing 0.5kg of praseodymium oxide, 55.6kg of indium oxide, 15.8kg of gallium oxide and 14.3kg of zinc oxide powder, grinding and pulping to obtain mixed slurry with the particle size D50 of 0.414 mu m, and carrying out spray granulation on the mixed slurry to obtain granulated powder with the particle size D50 of 26.1 mu m;

(2) molding the granulated powder for 90s under the pressure of 40MPa, and then carrying out cold isostatic pressing for 90s under the pressure of 350MPa to obtain a target biscuit;

(3) polishing the edges and the vertex angles of the target biscuit into R angles;

(4) sintering the polished target biscuit to obtain an oxide plane target; the sintering process comprises the following steps: in the air atmosphere, firstly heating to 1000 ℃ at the heating rate of 0.3 ℃/min, then heating to 1520 ℃ at the heating rate of 1.5 ℃/min, preserving the heat for 10 hours, and finally cooling to room temperature at the cooling rate of 1.5 ℃/min; an oxide planar target is obtained.

The sintering yield of the oxide planar target is 82%, the relative density is 97.78%, the oxide planar target is obtained by mechanical processing, the size of 870 × 380 × 8mm is obtained, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 32.9cm²/V·s。

Example 4

The invention relates to a preparation method of an oxide plane target, which comprises the following steps:

(1) mixing 0.5kg of praseodymium oxide, 55.6kg of indium oxide, 15.8kg of gallium oxide and 14.3kg of zinc oxide powder, grinding and pulping to obtain mixed slurry with the particle size D50 of 0.1 mu m, and carrying out spray granulation on the mixed slurry to obtain granulated powder with the particle size D50 of 16 mu m;

(2) molding the granulated powder for 80s under the pressure of 60MPa, and then carrying out cold isostatic pressing for 90s under the pressure of 450MPa to obtain a target biscuit;

(3) polishing the edges and the vertex angles of the target biscuit into R angles;

(4) sintering the polished target biscuit to obtain an oxide plane target; the sintering process comprises the following steps: in the air atmosphere, firstly heating to 1000 ℃ at the heating rate of 0.8 ℃/min, then heating to 1550 ℃ at the heating rate of 2 ℃/min, preserving heat for 8 hours, and finally cooling to room temperature at the cooling rate of 1.5 ℃/min; an oxide planar target is obtained.

The sintering yield of the oxide planar target is 84%, the relative density is 98.24%, the size of 870 × 380 × 8mm is obtained by mechanical processing, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 34.1cm²/V·s。

Example 5

The invention relates to a preparation method of an oxide plane target, which comprises the following steps:

(1) mixing 0.5kg of praseodymium oxide, 55.6kg of indium oxide, 15.8kg of gallium oxide and 14.3kg of zinc oxide powder, grinding and pulping to obtain mixed slurry with the particle size D50 of 1 mu m, and carrying out spray granulation on the mixed slurry to obtain granulated powder with the particle size D50 of 80 mu m;

(2) molding the granulated powder for 100s under the pressure of 20MPa, and then carrying out cold isostatic pressing for 120s under the pressure of 300MPa to obtain a target biscuit;

(3) polishing the edges and the vertex angles of the target biscuit into R angles;

(4) sintering the polished target biscuit to obtain an oxide plane target; the sintering process comprises the following steps: in the air atmosphere, firstly heating to 1000 ℃ at the heating rate of 0.2 ℃/min, then heating to 1500 ℃ at the heating rate of 1 ℃/min, preserving the heat for 15 hours, and finally cooling to room temperature at the cooling rate of 1.0 ℃/min; an oxide planar target is obtained.

The sintering yield of the oxide planar target is 81%, the relative density is 97.26%, the size of 870 × 380 × 8mm is obtained by mechanical processing, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 31.1cm²/V·s。

Example 6

The only difference between the preparation method of the oxide planar target in this example and that in example 1 is: in the step (1), the particle size D50 of the mixed slurry was 0.1. mu.m.

The sintering yield of the oxide planar target is 82%, the relative density is 97.93%, the size of 870 × 380 × 8mm is obtained by mechanical processing, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 33.4cm²/V·s。

Example 7

The only difference between the preparation method of the oxide planar target in this example and that in example 1 is: in the step (1), the particle size D50 of the mixed slurry was 0.25. mu.m.

The sintering yield of the oxide planar target is 83%, the relative density is 97.56%, the oxide planar target is obtained by mechanical processing, the size of 870 × 380 × 8mm is obtained, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 32.7cm²/V·s。

Example 8

The only difference between the preparation method of the oxide planar target in this example and that in example 1 is: in the step (1), the particle size D50 of the mixed slurry was 0.7. mu.m.

The sintering yield of the oxide planar target is 81%, the relative density is 97.76%, the size of 870 × 380 × 8mm is obtained by machining, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 32.9cm²/V·s。

Example 9

The only difference between the preparation method of the oxide planar target in this example and that in example 1 is: in the step (1), the particle size D50 of the mixed slurry was 1.0 μm.

The sintering yield of the oxide planar target is 83%, the relative density is 97.46%, the oxide planar target is obtained by mechanical processing, the size of 870 × 380 × 8mm is obtained, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 32.1cm²/V·s。

Example 10

The only difference between the preparation method of the oxide planar target in this example and that in example 1 is: in the step (1), the particle size D50 of the granulated powder is 15 μm.

The sintering yield of the oxide planar target is 82%, the relative density is 97.91%, the oxide planar target is obtained by mechanical processing, the size of 870 × 380 × 8mm is obtained, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 33.25cm²/V·s。

Example 11

The only difference between the preparation method of the oxide planar target in this example and that in example 1 is: in the step (1), the particle size D50 of the granulated powder is 50 μm.

The sintering yield of the oxide planar target is 80%, the relative density is 97.38%, the size of 870 × 380 × 8mm is obtained by machining, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 31.5cm²/V·s。

Example 12

The only difference between the preparation method of the oxide planar target in this example and that in example 1 is: in the step (1), the particle size D50 of the granulated powder is 80 μm.

Of said oxide planar targetThe sintering yield is 82%, the relative density is 97.11%, the size of 870 × 380 × 8mm is obtained by mechanical processing, the large-size high-mobility oxide planar target is obtained by binding with a back plate, the mobility of the target film-forming carrier is 30.9cm²/V·s。

Comparative example 1

The invention relates to a preparation method of an oxide plane target, which comprises the following steps:

(1) mixing 0.5kg of praseodymium oxide, 55.6kg of indium oxide, 15.8kg of gallium oxide and 14.3kg of zinc oxide powder, grinding and pulping to obtain mixed slurry with the particle size D50 of 0.452 mu m, and carrying out spray granulation on the mixed slurry to obtain granulated powder with the particle size D50 of 25.6 mu m;

(2) molding the granulated powder for 60s under the pressure of 50MPa, and then carrying out cold isostatic pressing for 60s under the pressure of 380MPa to obtain an unpolished target biscuit;

(3) sintering the unground target material biscuit obtained in the step (2) to obtain an oxide plane target; the sintering process comprises the following steps: in the air atmosphere, firstly heating to 1000 ℃ at the heating rate of 0.4 ℃/min, then heating to 1450 ℃ at the heating rate of 1 ℃/min, preserving the heat for 12 hours, and finally cooling to room temperature at the cooling rate of 1.0 ℃/min; an oxide planar target is obtained.

The sintering yield of the oxide planar target is 55%, the relative density is 97.58%, the oxide planar target is obtained by mechanical processing, the size of 870 × 380 × 8mm is obtained, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 32.1cm²/V·s。

Comparative example 2

The only difference between the preparation method of the oxide planar target in this example and that in example 1 is: in the step (1), the particle size D50 of the granulated powder is 100 μm.

The sintering yield of the oxide planar target is 75%, the relative density is 95.57%, the oxide planar target is obtained by mechanical processing, the size of 870 × 380 × 8mm is obtained, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 27.7cm²/V·s。

Comparative example 3

The only difference between the preparation method of the oxide planar target in this example and that in example 1 is: in the step (1), the particle size D50 of the mixed slurry is 1.5 μm.

The sintering yield of the oxide planar target is 83%, the relative density is 96.81%, the oxide planar target is obtained by mechanical processing, the size of 870 × 380 × 8mm is obtained, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 28.3cm²/V·s。

Comparative example 4

The only difference between the preparation method of the oxide planar target in this example and that in example 1 is: in the step (4), the sintering process is as follows: in pure oxygen atmosphere, firstly heating to 1000 ℃ at a heating rate of 0.4 ℃/min, then heating to 1450 ℃ at a heating rate of 3 ℃/min, preserving heat for 12 hours, and finally cooling to room temperature at a cooling rate of 1.0 ℃/min; an oxide planar target is obtained.

The sintering yield of the oxide planar target is 50%, the relative density is 97.21%, the oxide planar target is obtained by mechanical processing, the size of 870 × 380 × 8mm is obtained, the oxide planar target is bound with a back plate to obtain a large-size high-mobility oxide planar target, and the mobility of a film forming carrier of the target is 32.2cm²/V·s。

Finally, it should be noted that the above embodiments are only used for illustrating the technical solutions of the present invention and not for limiting the protection scope of the present invention, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions can be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.