阅读说明：本技术 具有包括区分开的p型和n型区与偏置触点的混合结构的太阳能电池 (Solar cell with hybrid structure including separate P-type and N-type regions and offset contacts ) 是由 戴维·D·史密斯 杰弗里·艾尔·科特 戴维·阿龙·伦道夫·巴尔克豪泽 金太锡 于 2020-03-27 设计创作，主要内容包括：本发明公开了一种太阳能电池以及制造所述太阳能电池的方法。所述太阳能电池可包括基板之上的第一发射极区,所述第一发射极区具有围绕所述基板的一部分的周边。第一导电触点在所述第一发射极区的所述周边之外的位置处电联接至所述第一发射极区。(The invention discloses a solar cell and a method of manufacturing the same. The solar cell may include a first emitter region over a substrate, the first emitter region having a perimeter surrounding a portion of the substrate. A first conductive contact is electrically coupled to the first emitter region at a location outside the perimeter of the first emitter region.)

1. A solar cell, comprising:

a first emitter region over a substrate, the first emitter region having a perimeter surrounding a portion of the substrate; and

a first conductive contact electrically coupled to the first emitter region at a location outside of the perimeter of the first emitter region.

2. The solar cell of claim 1, further comprising:

a first semiconductor layer over the substrate, wherein the first emitter region is in a first portion of the first semiconductor layer and a location outside of the perimeter of the first emitter region is on a second portion of the first semiconductor layer.

3. The solar cell of claim 2, wherein the first portion of the first semiconductor layer is continuous with the second portion of the first semiconductor layer.

4. The solar cell of claim 2, further comprising:

a first insulator layer over the substrate, the first insulator layer having a first opening, wherein a first portion of the first semiconductor layer is in the first opening of the first insulator layer and a second portion of the first semiconductor layer is over a portion of the first insulator layer.

5. The solar cell of claim 4, further comprising:

a second insulator layer over the first semiconductor layer, the second insulator layer having an opening, wherein a location outside the perimeter of the first emitter region is below the opening of the second insulator layer.

6. The solar cell of claim 5, wherein a first portion of the first conductive contact is in the opening of the second insulator layer, a second portion of the first conductive contact is on a portion of the second insulator layer above the first insulator layer, and a third portion of the first conductive contact is on a portion of the second insulator layer above the first emitter region.

7. The solar cell of claim 4, further comprising:

a second semiconductor layer between the first insulator layer and the substrate, the second semiconductor layer having a conductivity type opposite to a conductivity type of the first semiconductor layer,

and the second semiconductor layer is included in a second emitter region of the solar cell.

8. The solar cell of claim 7, wherein the first insulator layer has a second opening, the solar cell further comprising:

a second conductive contact electrically coupled to the second semiconductor layer at a location below the second opening of the first insulator layer.

9. The solar cell of claim 2, wherein the first semiconductor layer comprises polycrystalline silicon and the substrate comprises monocrystalline silicon.

10. The solar cell of claim 9, further comprising:

a dielectric layer between the first semiconductor layer and the substrate.

11. A solar cell, comprising:

a first insulator layer over a substrate, the first insulator layer having a first opening and a second opening;

a first semiconductor layer over the substrate, wherein a first portion of the first semiconductor layer is in the first opening of the first insulator layer and a second portion of the first semiconductor layer is over a portion of the first insulator layer;

a second semiconductor layer over the substrate, the second semiconductor layer between the first insulator layer and the substrate, the second semiconductor layer having a conductivity type opposite to a conductivity type of the first semiconductor layer;

a second insulator layer over the first semiconductor layer, the second insulator layer having an opening over a second portion of the first semiconductor layer;

a first conductive contact in the opening of the second insulator layer, the first conductive contact electrically coupled to a second portion of the first semiconductor layer at a location below the opening of the second insulator layer; and

a second conductive contact in the second opening of the first insulator layer, the second conductive contact electrically coupled to the second semiconductor layer at a location below the second opening of the first insulator layer.

12. The solar cell of claim 11, wherein the first portion of the first semiconductor layer is continuous with the second portion of the first semiconductor layer.

13. The solar cell of claim 11, wherein the first semiconductor layer comprises polycrystalline silicon and the substrate comprises monocrystalline silicon.

14. The solar cell of claim 13, further comprising:

a dielectric layer between the first semiconductor layer and the substrate.

15. The solar cell of claim 11, wherein the first conductive contact is further on a portion of the second insulator layer above the first insulator layer, and the first conductive contact is further on a portion of the second insulator layer above the first portion of the first semiconductor layer.

16. A method of fabricating a solar cell, the method comprising:

forming a first insulator layer, a first semiconductor layer, and a second semiconductor layer over a substrate, the first insulator layer having a first opening, wherein a first portion of the first semiconductor layer is in the first opening of the first insulator layer and a second portion of the first semiconductor layer is over a portion of the first insulator layer, and wherein the second semiconductor layer is between the first insulator layer and the substrate, the second semiconductor layer having a conductivity type opposite to a conductivity type of the first semiconductor layer;

forming a second insulator layer over the first semiconductor layer;

forming an opening in the second insulator layer, the opening being over a second portion of the first semiconductor layer, and forming a second opening in the first insulator layer;

forming a first conductive contact in the opening of the second insulator layer, the first conductive contact being electrically coupled to a second portion of the first semiconductor layer at a location below the opening of the second insulator layer; and

forming a second conductive contact in the second opening of the first insulator layer, the second conductive contact being electrically coupled to the second semiconductor layer at a location below the second opening of the first insulator layer.

17. The method of claim 16, wherein forming the first semiconductor layer comprises forming a first portion of the first semiconductor layer continuous with a second portion of the first semiconductor layer.

18. The method of claim 16, wherein forming the first semiconductor layer comprises forming polysilicon over a single crystal silicon substrate.

19. The method of claim 18, further comprising:

a dielectric layer is formed between the first semiconductor layer and the substrate.

20. The method of claim 16, wherein forming the first conductive contact comprises further forming the first conductive contact on a portion of the second insulator layer over the first insulator layer and on a portion of the second insulator layer over a first portion of the first semiconductor layer.

Background

Photovoltaic (PV) cells, often referred to as solar cells, are devices used to convert solar radiation into electrical energy. Generally, solar radiation impinging on the surface of a solar cell substrate and entering the substrate forms electron and hole pairs in the bulk of the substrate. The electron and hole pairs migrate to the p-type and n-type doped regions in the substrate, creating a voltage difference between the doped regions. The doped region is connected to a conductive region on the solar cell to conduct current from the cell to an external circuit. When PV cells are combined in an array such as a PV module, the electrical energy collected from all of the PV cells can be combined in series and parallel arrangements to provide a power source having a certain voltage and current.

Drawings

Fig. 1 illustrates a cross-sectional view of a portion of a solar cell according to some embodiments.

Fig. 2A and 2B illustrate a plan view and a cross-sectional view, respectively, of a portion of a solar cell, according to some embodiments.

Fig. 3 illustrates a cross-sectional view of a portion of a solar cell according to some embodiments.

Fig. 4 illustrates a cross-sectional view of a portion of a solar cell according to some embodiments.

Fig. 5 illustrates a cross-sectional view of a portion of a solar cell according to some embodiments.

Fig. 6 illustrates a cross-sectional view of a portion of a solar cell according to some embodiments.

Fig. 7 illustrates an exemplary plan view of a portion of a solar cell according to some embodiments.

Fig. 8 is a flow chart illustrating a method of fabricating a solar cell according to some embodiments.

Fig. 9 shows a cross-sectional view of a portion of a solar cell for comparison purposes.

Detailed Description

Efficiency is an important characteristic of a solar cell, as it is directly related to the power generation capacity of the solar cell. Also, the efficiency of producing solar cells is directly related to the cost-effectiveness of such solar cells. Therefore, techniques to improve the efficiency of solar cells or techniques to improve the efficiency of manufacturing solar cells are generally needed. Some embodiments of the present disclosure allow for increased manufacturing efficiency of solar cells by providing a new process for manufacturing solar cell structures. Some embodiments of the present disclosure allow for improved solar cell efficiency by providing new solar cell structures.

The following detailed description is merely exemplary in nature and is not intended to limit the embodiments or the application and uses of such embodiments. As used herein, the word "exemplary" means "serving as an example, instance, or illustration. Any embodiment described herein as exemplary is not necessarily preferred or advantageous over other embodiments. Furthermore, there is no intention to be bound by any expressed or implied theory presented in the preceding technical field, background, brief summary or the following detailed description.

References in the specification to "one embodiment" or "an embodiment" do not necessarily refer to the same embodiment. The particular features, structures, or characteristics may be combined in any suitable manner consistent with the present disclosure.

Terminology. The following paragraphs provide definitions and/or context for terms present in this disclosure (including the appended claims):

"area" or "portion" describes a discrete area, volume, portion, or location of an object or material having definable properties, but not necessarily fixed boundaries.

"comprising" is an open-ended term that does not exclude other structures or steps.

"configured to" denotes a structure by indicating a device such as a unit or a component, including a structure that performs one or more tasks during operation, and such a structure is configured to perform the task even if the device is not currently operating (e.g., not turned on/not activated). A device "configured to" perform one or more tasks is expressly intended not to invoke section 35u.s.c. § 112(f), the sixth section.

The terms "first," "second," and the like are used as labels followed by nouns and do not imply any type of order (e.g., spatial, temporal, logical, etc.). For example, reference to a "first" semiconductor layer does not necessarily mean that the semiconductor layer is the first semiconductor layer in a sequence; rather, the term "first" is used to distinguish the semiconductor layer from another semiconductor layer (e.g., "second" semiconductor layer). As used herein, a semiconductor layer may be a polysilicon layer, for example, a polysilicon layer doped with a P-type or N-type dopant. In one example, the first semiconductor layer may be a first polysilicon layer, wherein multiple polysilicon layers may be formed (e.g., a second polysilicon layer may be formed).

"based on". As used herein, the term is used to describe one or more factors that affect the results of a determination. The term does not exclude further factors that may influence the determination result. That is, the determination may be based only on those factors or at least partially on those factors. Consider the phrase "determine a based on B. Although B may be a factor that affects the determination of a, such phrases do not exclude that the determination of a is also based on C. In other examples, a may be determined based on B alone.

"coupled" means that an element, feature, structure, or node is or may be directly or indirectly connected or in communication with another element/node/feature, and not necessarily directly mechanically connected together, unless expressly stated otherwise.

"prevent" means to reduce, minimize, or effectively or virtually eliminate something, such as completely avoiding an outcome, consequence, or future state.

"thin dielectric layer," "tunnel dielectric layer," "thin dielectric material," or an intermediate layer/material refers to a material located on a semiconductor region, between a substrate and another semiconductor layer, on a substrate, or between doped or semiconductor regions in a substrate. In a certain embodiment, the thin dielectric layer may be a tunnel oxide layer or a nitride layer having a thickness of about 2 nanometers or less. A thin dielectric layer may be referred to as a very thin dielectric layer through which electrical conduction may be achieved. Conduction may be due to quantum tunneling and/or the presence of small regions that are directly physically connected by thin dots in the dielectric layer. Exemplary materials include silicon oxide, silicon dioxide, silicon nitride, and other dielectric materials. In a certain embodiment, multiple dielectric layers may be formed. "about" or "approximately". As used herein, the term "about" or "approximately" with respect to a recited numerical value, including, for example, integers, fractions, and/or percentages, generally indicates that the recited numerical value encompasses a range of values (e.g., +/-5% to 10% of the recited numerical value) that one of ordinary skill in the art would consider equivalent to the recited numerical value (e.g., performs substantially the same function, functions in substantially the same way, and/or has substantially the same result).

Furthermore, certain terminology may also be used in the following description for the purpose of reference only, and thus such terminology is not intended to be limiting. For example, terms such as "upper," "lower," "above," and "below" refer to directions in the drawings to which reference is made. Terms such as "front/front," "back," "side/side," "outside," and "inside" describe the orientation and/or position of certain portions of the component within a consistent but arbitrary frame of reference, as will be apparent by reference to the text and associated drawings describing the component in question. Such terms may include the words specifically mentioned above, derivatives thereof, and words of similar import.

Methods of fabricating solar cell emitter regions and resulting solar cells are described herein. In the following description, numerous specific details are set forth, such as specific process flow operations, in order to provide a thorough understanding of embodiments of the present disclosure. It will be apparent to one skilled in the art that embodiments of the present disclosure may be practiced without these specific details. In other instances, well-known fabrication techniques, such as lithography and patterning techniques, are not described in detail to avoid unnecessarily obscuring embodiments of the present disclosure. Furthermore, it is to be understood that the various embodiments shown in the figures are exemplary illustrations and are not necessarily drawn to scale.

To provide background information, in a hybrid structure, two semiconductor layers (such as polysilicon layers) are deposited separately. The overlap between the semiconductor layers is separated by a dielectric layer or structure. The contacts may coincide to a large extent with the emitters on the wafer. In contrast, the embodiments described herein can be implemented to enable contacts to be offset from emitter regions on a wafer.

According to one or more embodiments described herein, a biased contact structure is implemented to bring a semiconductor layer out of contact with a metal and into contact with a substrate or wafer. If the contacts are made by laser ablation, it is possible to reduce or eliminate laser damage on one type of emitter, because the dielectric and underlying polycrystalline layer may prevent damage from being transferred to the substrate. In contrast, in case the laser scribing overlaps or at least partially overlaps the emitter region, damage of the emitter region may occur. Another potential benefit is the elimination of the aluminum "spiking" risk of the hybrid emitter. For example, a spike may be formed to cause contact without causing shunting. Another potential benefit is that the interface region may be formed independently of the emitter region. If the emitter and contacts coincide to a large extent, it may be difficult to shrink the emitter into a point-like structure and maintain alignment tolerances. If alignment tolerances are not to be maintained, the emitter can have a variety of shapes, such as a line shape to minimize the butt-joint area, or many small dots to maximize the butt-joint area.

As an example structure with offset contacts, fig. 1 shows a cross-sectional view of a portion of a solar cell 100 according to some embodiments. In a certain embodiment, the solar cell 100 may include a substrate 106 having a front side 102 and a back side 104 (the front side 102 being opposite the back side 104). In some embodiments, the front surface 102 may be referred to as a front surface and the back surface 104 may be referred to as a back surface. In a certain embodiment, the front surface may have a textured surface. The textured surface 130 may be a surface having a regular or irregular shape for scattering incident light, reducing the amount of light reflected from the light receiving surface and/or exposed surface of the solar cell 100.

Referring again to fig. 1, in a certain embodiment, the solar cell 100 may include a first dielectric layer 120 disposed on the back side 104 of the substrate 106. In some embodiments, the first dielectric layer 120 may be referred to as a first thin dielectric layer. In a certain example, the first dielectric layer 120 can be a thin oxide layer, such as a tunnel dielectric layer (e.g., tunnel oxide, silicon oxynitride, silicon oxide). In a certain embodiment, the first dielectric layer 120 may have a thickness of about 2 nanometers or less.

Still referring again to fig. 1, in a certain embodiment, the solar cell 100 may include a first semiconductor layer 112 disposed over the back side of the solar cell 100. In a certain embodiment, the first semiconductor layer 112 may be disposed on the first dielectric layer 120. In a certain embodiment, the first semiconductor layer 112 may be a first polysilicon layer. In a certain embodiment, the first semiconductor layer 112 may include a first conductivity type. In a certain example, the first semiconductor layer 112 may be a first polysilicon layer of a first conductivity type. In a particular embodiment, the first conductivity type is N-type (e.g., formed using phosphorus atoms or arsenic impurity atoms). In some embodiments, the first semiconductor layer is a pre-doped polysilicon layer. In one such embodiment, a first semiconductor layer having a particular conductivity type (e.g., N-type or P-type) is formed.

Referring again to fig. 1, in one embodiment, the solar cell 100 may include a second dielectric layer 114 disposed on the back side 104 of the substrate 106. In some embodiments, the second dielectric layer 114 may be referred to as a second thin dielectric layer. In a certain example, the second dielectric layer 114 can be a thin oxide layer, such as a tunnel dielectric layer (e.g., tunnel oxide, silicon oxynitride, silicon oxide). In a certain embodiment, the second dielectric layer 114 may have a thickness of about 2 nanometers or less.

Referring again to fig. 1, in a certain embodiment, the solar cell 100 may include a second semiconductor layer 108 disposed on a second dielectric layer 114. In one embodiment, the second semiconductor layer 108 may be a second polysilicon layer. In a certain embodiment, the second semiconductor layer may include a second conductivity type. In a certain example, the second semiconductor layer 108 may be a second polysilicon layer of a second conductivity type. In one particular embodiment, the second conductivity type is P-type (e.g., formed using boron impurity atoms). In some embodiments, the second semiconductor layer is a pre-doped polysilicon layer. In one such embodiment, a second semiconductor layer having a particular conductivity type (e.g., N-type or P-type) is formed. In a certain embodiment, the solar cell 100 can further include a first insulator layer 110 disposed on the second semiconductor layer 108. In one example, the first insulator layer 110 can be or include silicon dioxide.

Referring again to fig. 1, in a certain embodiment, a third dielectric layer 116 is between the first semiconductor layer 112 and the second semiconductor layer 108. In some embodiments, the third dielectric layer 116 may be referred to as a third thin dielectric layer. In a certain example, the third dielectric layer 116 can be a thin oxide layer, such as a tunnel dielectric layer (e.g., tunnel oxide, silicon oxynitride, silicon oxide). In a certain embodiment, the third dielectric layer 116 may have a thickness of about 2 nanometers or less. In some embodiments, the first dielectric layer 120, the second dielectric layer 114, and the third dielectric layer 116 may form a continuous dielectric layer. In a certain example, the continuous dielectric layer may include the first dielectric layer 120, the second dielectric layer 114, and the third dielectric layer 11 and may not include any gaps or discontinuous structures. In some embodiments, any combination of continuous dielectric layers may be formed. For example, the first dielectric layer and the second dielectric layer may alternatively form a continuous dielectric layer. In one example, the first and third dielectric layers and/or the second and third dielectric layers may form a continuous dielectric layer.

Referring again to fig. 1, in a certain embodiment, a second insulator layer 125 can be disposed on the first semiconductor layer 112. In a certain embodiment, the second insulator layer 125 can be a dopant layer. In one embodiment, the dopant layer may have a first conductivity type. In a certain embodiment, the dopant layer has the same conductivity type as the first semiconductor layer 112. In a certain example, the dopant layer is N-type (e.g., formed using phosphorus atoms or arsenic impurity atoms). In another example, the dopant layer is P-type (e.g., formed using boron impurity atoms). In a certain embodiment, the second insulator layer 125 can be a non-continuous layer (e.g., as shown in fig. 1). In a certain example, the second insulator layer 125 can be divided into discrete portions and still be referred to as a single dielectric layer or dopant layer. In one embodiment, the second insulator layer 125 may comprise silicon oxide or silicon oxynitride. In a certain embodiment, the second insulator layer 125 can be a dielectric layer.

Referring again to fig. 1, a first conductive contact 129 may be disposed over the first semiconductor layer 112. In one embodiment, first conductive contact 129 is disposed in opening 123 in second insulator layer 125. In a certain embodiment, although not shown in fig. 1, but shown in fig. 2, as described below, the solar cell 100 can include a second conductive contact (e.g., 128 of fig. 2A and 2B, described below) disposed over the second semiconductor layer 108. In a certain embodiment, the second conductive contact may be disposed in an opening (e.g., 121 of fig. 2A and 2B, as described below) in the first insulator layer 110.

In one embodiment, the first conductive contact 129 and the second conductive contact 128 may comprise plated metal. In a certain example, the first and second conductive contacts 129, 128 can include copper, tin, titanium, tungsten, and/or nickel, among other metals. In some embodiments, first conductive contact 129 and second conductive contact 128 may comprise deposited metal and/or metal foil. In a certain example, the first and second conductive contacts 129, 128 may comprise aluminum or aluminum foil. In a certain embodiment, the first and second conductive contacts 129, 128 may comprise wires, ribbons, or any other suitable type of conductive material. In a certain example, the first and second conductive contacts 129, 128 can comprise aluminum wires, aluminum strips, or the like.

Referring again to fig. 1, in an embodiment, the solar cell 100 may further include a fourth dielectric layer 132 disposed on the front side 102. In a certain embodiment, the fourth dielectric layer 132 may be an anti-reflective coating (ARC). In a certain example, the fourth dielectric layer 132 may include silicon nitride. In one example, the fourth dielectric layer may comprise a tunnel dielectric layer (e.g., tunnel oxide, silicon oxynitride, silicon oxide). In a certain embodiment, a polysilicon layer may be formed on the fourth thin dielectric layer 132. In a certain embodiment, a fifth dielectric layer may be disposed on the polysilicon layer. In a certain embodiment, the fifth dielectric layer may be an anti-reflective coating (ARC). In a certain example, the fifth dielectric layer may include silicon nitride.

Referring again to fig. 1, in some embodiments, the second semiconductor layer 108 may be a P-type polysilicon layer. In one embodiment, the first semiconductor layer 112 may be an N-type polysilicon layer. In a certain embodiment, the substrate 106 may be an N-type monocrystalline silicon substrate. In a certain embodiment, the first dielectric layer 120, the second dielectric layer 114, the third dielectric layer 116, and the second insulator layer 125 may comprise silicon oxide. In a certain embodiment, the first insulator layer 110 is or includes silicon dioxide. In a certain embodiment, where the second insulator layer 125 may comprise a dopant layer, the second insulator layer 125 may comprise phosphorus, arsenic, or boron. In one embodiment, the second semiconductor layer 108 may be an N-type polysilicon layer. In one embodiment, the first semiconductor layer 112 may be a P-type polysilicon layer. In some embodiments, the substrate 106 may be a P-type monocrystalline silicon substrate.

Referring again to fig. 1, in a certain embodiment, the first conductive contact 129 (and/or the noted second conductive contact) may comprise a deposited metal. In a certain embodiment, the deposit metal may be aluminum-based. In one such embodiment, the aluminum-based deposit metal may have a thickness approximately in the range of 0.3 to 20 microns and include an aluminum content greater than approximately 97% and a silicon content approximately in the range of 0 to 2%. In a certain example, the aluminum-based deposit metal may include copper, titanium tungsten, nickel, and/or aluminum, among other metals. In a certain embodiment, the aluminum-based deposit metal is formed by a blanket deposition process. In a certain embodiment, the aluminum-based deposit metal may be a metal seed layer. In some examples, the deposit metal may be deposit aluminum. In one embodiment, a conductive contact as described herein may include copper, tin, nickel, and/or aluminum, among other metals.

Referring again to fig. 1, in some embodiments, a conductive contact as described herein comprises a metal foil. In a certain embodiment, the metal foil is an aluminum (Al) foil having a thickness approximately in the range of 5-100 microns. In one embodiment, the Al foil is an aluminum alloy foil including aluminum and a second element (such as, but not limited to, copper, manganese, silicon, magnesium, zinc, tin, lithium, or combinations thereof). In one embodiment, the Al foil is a tempered grade foil such as, but not limited to, F-grade (free state), O-grade (fully soft), H-grade (strain hardened), or T-grade (heat treated). In one embodiment, the aluminum foil is anodized aluminum foil. In another embodiment, the aluminum foil is not anodized.

Still referring again to fig. 1, in a certain embodiment, the conductive contacts as described herein comprise conductive wires. In a certain embodiment, the conductive line may comprise a conductive material (e.g., a metal such as aluminum, copper, or another suitable conductive material, with or without a coating such as tin, silver, nickel, or an organic solderability preservative). In a certain example, the conductive lines may be bonded to the first semiconductor layer and/or the second semiconductor layer by a thermocompression bonding, ultrasonic bonding, or thermosonic bonding method.

Referring again to fig. 1, according to a certain embodiment of the present disclosure, the solar cell 100 includes a first emitter region 150 over the substrate 106. The first emitter region 150 has a periphery around a portion of the substrate, i.e., as viewed from a plan view (i.e., as viewed from a direction perpendicular to a spherical surface of the substrate), wherein the periphery surrounds a region of the emitter region 150 above the substrate. The first conductive contact 129 is electrically coupled to the first emitter region 150 at a location outside the perimeter 150 of the first emitter region (i.e., at a location that is not above the first emitter region 150 from a plan view perspective). It should be understood that the term "offset" is used to refer to contact openings outside the perimeter of the emitter region 150, and not merely the misalignment of the contact openings with the underlying emitter region.

In a certain embodiment, the solar cell 100 further includes a first semiconductor layer 112 over the substrate 106. In one embodiment, the first emitter region 150 is in the first portion 112A of the first semiconductor layer 112 and a location outside of the perimeter 150 of the first emitter region is on the second portion 112B of the first semiconductor layer 112. In one such embodiment, the first portion 112A of the first semiconductor layer 112 is continuous with the second portion 112B of the first semiconductor layer 112.

In a certain embodiment, the solar cell 100 further includes a first insulator layer 110 over the substrate 106. The first insulator layer 110 has a first opening 111. The first portion 112A of the first semiconductor layer is in the first opening 111 of the first insulator layer 110. The second portion 112B of the first semiconductor layer 112 is above the portion 110A of the first insulator layer 110.

In a certain embodiment, the solar cell 100 further includes a second insulator layer 125 over the first semiconductor layer 112. The second insulator layer 125 has an opening 123. In one such embodiment, a location outside the perimeter of the first emitter region 150 is below the opening 123 of the second insulator layer 125 and the first portion 129A of the first conductive contact 129 is in the opening 125 of the second insulator layer. In certain such embodiments, the second portion 129B of the first conductive contact 129 is on the portion 125A of the second insulator layer 125 above the first insulator layer 110. A third portion 129C of the first conductive contact 129 is on a portion 125B of the second insulator 125 layer over the first emitter region 150. In a certain embodiment, the solar cell 100 further includes a second semiconductor layer 108 between the first insulator layer 110 and the substrate 106. In one embodiment, the second semiconductor layer 108 has a conductivity type opposite to that of the first semiconductor layer 112. In one embodiment, the second semiconductor layer 112 is included in a second emitter region (e.g., 152 of fig. 2A and 2B, described below) of the solar cell. In one embodiment, the first insulator layer 110 has a second opening (e.g., 121 of fig. 2A and 2B, described below). A second conductive contact (e.g., 128 of fig. 2A and 2B, described below) is electrically coupled to the second semiconductor layer 108 at a location below the second opening 121 of the first insulator layer 110.

Turning now to fig. 2A and 2B, fig. 2A and 2B illustrate a plan view and a cross-sectional view, respectively, of a portion of a solar cell, according to some embodiments. It should be understood that the plan view shows a portion of the solar cell larger than the cross-sectional view, as both show a single emitter structure including a conductive contact of type 128, but the cross-sectional view only shows a single emitter structure including a first conductive contact of type 129, while the plan view shows two emitter structures including a first conductive contact of type 129.

Referring to fig. 2A and 2B, the solar cell 200 includes a first insulator layer 110 over a substrate 106. The first insulator layer 110 has a first opening 111 (in this case, two such openings are shown in fig. 2A and 2B) and a second opening 121. The first semiconductor layer 112 is over the substrate 106. The first portion 112 of the first semiconductor layer is in the first opening 111 of the first insulator layer 110. The second portion 112 of the first semiconductor layer is over a portion of the first insulator layer 110. In one embodiment, the first portion of the first semiconductor layer 112 is continuous with the second portion of the first semiconductor layer 112.

Referring again to fig. 2A and 2B, the second semiconductor layer 108 is over the substrate 106. The second semiconductor layer 108 is between the first insulator layer 110 and the substrate 106. The second semiconductor layer 108 has a conductivity type opposite to that of the first semiconductor layer 112. The second insulator layer 125 is over the first semiconductor layer 112. The second insulator layer 125 has an opening 123 over a second portion of the first semiconductor layer 112. In a certain embodiment, the first semiconductor layer 112 is included in a first emitter region 150 (two of which are shown for a single emitter structure based on the first conductive contact 129 of fig. 2A and 2B), and the second semiconductor layer 108 is included in a second emitter region 152, which second emitter region 152 may be an emitter region having a conductivity type opposite to that of the one or more emitter regions 150.

Referring again to fig. 2A and 2B, first conductive contacts 129 (in this case, two such contacts are shown bridging between two respective emitter regions 150) are in the openings 111 of the second insulator layer 125. The first conductive contact 129 is electrically coupled to the second portion of the first semiconductor layer 112 at a location below the opening 123 of the second insulator layer 125. In a certain embodiment, the first conductive contact 129 is also on a portion of the second insulator layer 125 above the first insulator layer 110. In one such embodiment, the first conductive contact 129 is also on a portion of the second insulator layer 125 over a first portion of the first semiconductor layer 112 (i.e., the portion of the first semiconductor layer 112 in the opening 111 and included in the emitter region 150).

Referring again to fig. 2A and 2B, in an embodiment, a portion of the insulator layer 110 can be located below the opening 123 and above the substrate 106. In the same embodiment, the portion of the insulator layer 110 may be disposed on the second semiconductor layer 108. In a certain embodiment, the portion of the first insulator layer 110 can physically and/or electrically isolate the first semiconductor layer 112 from the second semiconductor layer 108. In the same embodiment, the portion of the insulator layer 110 can be located between at least two openings 111 of the second insulator layer 125. In a certain embodiment, the portion of the insulator layer 110 may be surrounded by the first semiconductor layer 112. In a certain example, three sides of the portion of the insulator layer 110 can be surrounded by the first semiconductor layer 112, as shown in fig. 2B.

Referring again to fig. 2A and 2B, in an embodiment, a portion of the second semiconductor layer 108 may be located below the opening 123 and above the substrate 106. In the same embodiment, a portion of the second semiconductor layer 108 may be located below a portion of the insulator layer 110 (e.g., the portion below the opening 123) and above the substrate 106. In the same embodiment, the portion of the second semiconductor layer 108 may be located between the two emitter regions 150. In the same embodiment, the portion of the second semiconductor layer 108 may physically and/or electrically isolate (e.g., disconnect, not contact) the first semiconductor layer 112 and/or other portions of the second semiconductor layer 108.

A second conductive contact 128 is in the second opening 121 of the first insulator layer 110. The second conductive contact 128 is electrically coupled to the second semiconductor layer 108 at a location below the second opening 121 of the first insulator layer 110. In a certain embodiment, the second conductive contact 128 can extend over the first insulator layer 110, e.g., the second conductive contact 128 can extend in the opening 121 and over at least one edge of the first insulator layer 110.

Referring to the plan view 200 of fig. 2A, it should be understood that the openings 123 and emitter regions 150, 152 are shown for clarity and may not be visible in a similar view of the final product. In a certain example, conductive contact 128 can be disposed above emitter region 152, and conductive contact 129 can be disposed above emitter region 150 and opening 123, thereby covering opening 123 and emitter regions 150, 152 from view.

Turning now to fig. 3, fig. 3 illustrates a cross-sectional view of a portion of a solar cell 300, according to some embodiments. In the example shown, two openings 123 may be formed in the second insulator layer 125 for each emitter structure including a first semiconductor layer of type 112 and a first conductive contact of type 129. In a certain example, although two openings 123 are shown, 1, 2, 3, 4, or more openings may be formed.

Turning now to fig. 4, fig. 4 illustrates a cross-sectional view of a portion of a solar cell 400 according to some embodiments. In the example shown, two openings 111 may be formed in the first insulator layer 110 for each emitter structure including a first semiconductor layer of type 112 and a first conductive contact of type 129. In a certain example, although two openings 111 are shown, 1, 2, 3, 4, or more openings may be formed.

Turning now to fig. 5, fig. 5 illustrates a cross-sectional view of a portion of a solar cell 500, according to some embodiments. In the example shown, for each emitter structure comprising a first semiconductor layer of type 112 and a first conductive contact of type 129, three openings 111 are formed in the first insulator layer 110 and two openings 123 are formed in the second insulator layer 125. In a certain example, although two openings 123 and three openings 111 are shown, 1, 2, 3, 4, or more openings may be formed.

Turning now to fig. 6, fig. 6 illustrates a cross-sectional view of a portion of a solar cell 600, in some example of an open emitter configuration, in accordance with some embodiments. In the example shown, for each emitter structure comprising a first semiconductor layer of type 112 and a first conductive contact of type 129, three openings 111 are formed in the first insulator layer 110 and two openings 123 are formed in the second insulator layer 125. However, the first conductive contact 129 is in a central opening of the three openings 111 in the first insulator layer 110. In one embodiment, the first conductive contact 129 is effectively recessed or retracted from an outer portion of the emitter structure. It should be understood that the portion of the second semiconductor layer 112 extending beyond the first conductive contact 129 should not contact the first semiconductor layer 108 or a conductive contact of type 128 coupled to the first semiconductor layer 108, e.g., 108, 128 with reference to fig. 2A and 2B. In a certain example, portions of the solar cell 600 can include exposed portions 125, e.g., which are not covered and/or are under the conductive contacts 129. In a certain example, exposed portion 125 can be located over opening 111 that is also uncovered and/or under conductive contact 129.

It should be understood that in each of the cross-sectional views described above, the conductive layer 129 is shown in continuous, intimate contact with the dielectric layer 125 immediately below the conductive contact 129. However, it should be understood that in some embodiments, conductive contact 129 need only be in physical contact with the second emitter in an opening in dielectric 123. In all other positions, the conductive contact 129 may float. In some cases, it may even be advantageous for the conductive contact 129 not to be in intimate contact with the insulator over the first emitter (e.g., to reduce the risk of shunting). Turning now to fig. 7, fig. 7 illustrates an exemplary plan view of a portion of a solar cell according to some embodiments.

Referring to part (a) of fig. 7, the solar cell 700 may include any suitable shape of the emitter region 150, such as the square shape shown in the figure. Referring to part (b) of fig. 7, the solar cell 702 may include a uniform line shape for the emitter region 150. Referring to part (c) of fig. 7, the solar cell 704 may include any shape suitable for the opening 123 to provide an offset contact, such as the square shape shown in the figure. Referring to part (d) of fig. 7, the solar cell 706 may include a uniform line shape for the opening 123 to provide a bias contact. In some examples, the shape and/or form of the emitter regions and/or openings may be controlled by the method of forming these emitter regions and/or openings. For example, in the case where the opening 123 may be formed using a laser contact forming process, the opening 123 has an area related to a laser spot size. Further, while a particular shape is shown, it should be understood that embodiments herein may have any type of shape and are not limited to the particular shapes and/or forms presented above.

Turning now to fig. 8, as an exemplary method of fabrication, fig. 8 is a flow chart 800 illustrating a method of fabricating a solar cell according to some embodiments.

Referring to operation 802 of flowchart 800 of fig. 8, a method of fabricating a solar cell includes forming a first insulator layer, a first semiconductor layer, and a second semiconductor layer over a substrate. The first insulator layer may have a first opening, wherein a first portion of the first semiconductor layer may be in the first opening of the first insulator layer and a second portion of the first semiconductor layer may be over a portion of the first insulator layer. The second semiconductor layer may be between the first insulator layer and the substrate. The second semiconductor layer may have a conductivity type opposite to that of the first semiconductor layer.

In a certain embodiment, the first portion of the first semiconductor layer is continuous with the second portion of the first semiconductor layer. In a certain embodiment, the first semiconductor layer comprises polysilicon and the substrate comprises monocrystalline silicon. In a certain embodiment, the first dielectric layer is between the first semiconductor layer and the substrate. The second dielectric layer may be between the second semiconductor layer and the substrate.

In a certain embodiment, a texturing process may be performed on the front side of the substrate prior to forming the first insulator layer, the first semiconductor layer, and the second semiconductor layer over the substrate. In a certain example, a hydroxide-based wet etchant may be used to form a textured surface on the front surface of the substrate. However, it should be understood that texturing of the front surface may be omitted from the process flow. In a certain embodiment, the substrate may be cleaned, polished, planarized, and/or thinned prior to or within the same or a single process operation of the texturing process. In a certain example, a wet chemical cleaning process may be performed before and/or after the texturing process. Although the texturing process may be performed at the beginning of the manufacturing process, in another embodiment, the texturing process may be performed in another operation of the manufacturing process. In a certain example, the texturing process may alternatively be performed after the patterning process. In one example, the texturing process may be performed prior to the thermal process. In one such example, the texturing process can be performed after patterning (e.g., patterning of polysilicon regions) and before the thermal process.

In a certain embodiment, the second dielectric layer may be formed in an oxidation process and is a thin oxide layer such as a tunnel dielectric layer (e.g., silicon oxide). In one embodiment, the second dielectric layer may be formed during the deposition process. In a certain embodiment, the second dielectric layer is a thin oxide layer or a silicon oxynitride layer. In a certain embodiment, forming the second dielectric layer may include forming the second dielectric layer to a thickness of about 2 nanometers or less. In a certain example, the second dielectric layer may be grown using a thermal process or an oven. As used herein, the second dielectric layer may also be referred to as a second thin dielectric layer.

In a certain embodiment, forming the second semiconductor layer may include forming a polysilicon layer. In a certain embodiment, forming the second semiconductor layer may include forming a silicon layer on the second dielectric layer, forming a silicon layer above the first insulator layer, and then patterning the silicon layer, the first insulator layer, and the second dielectric layer to form an opening in the first insulator layer and the second semiconductor layer (e.g., to form a polysilicon layer having an insulator layer thereon, wherein the opening is formed in the polysilicon layer and the insulator layer). In another example, the second semiconductor layer may be formed using screen printing, ink jet printing, or any other process for depositing a patterned silicon layer directly, as opposed to the above.

In a certain embodiment, the second dielectric layer is formed over a back side of a substrate (e.g., a silicon substrate). In one embodiment, the second dielectric layer is a thin oxide layer. In a certain embodiment, a second semiconductor layer, such as a silicon layer, may be deposited over the second dielectric layer. In one example, a silicon layer may be deposited over the second dielectric layer using a low pressure chemical vapor deposition process. In a certain embodiment, a silicon layer is grown on the second dielectric layer in a thermal process and/or oven. In one embodiment, the second dielectric layer and the silicon layer may be formed (e.g., grown) in the same or a single oven and/or in the same or a single process operation. In some embodiments, the second dielectric layer and the silicon layer may be formed on the back side, front side and/or sides of the substrate, wherein a subsequent patterning or cleaning process may be performed to remove the second dielectric layer and the second semiconductor layer from the front side and/or sides of the substrate.

In a certain embodiment, forming the second semiconductor layer may include forming a silicon layer having the second conductivity type. In a certain example, forming the silicon layer can include growing a P-type silicon layer over the second dielectric layer (e.g., a thin oxide layer). In other embodiments, the silicon layer may be an N-type silicon layer. In a certain embodiment, the silicon layer is an amorphous silicon layer. In one such embodiment, the amorphous silicon layer is formed using Low Pressure Chemical Vapor Deposition (LPCVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD). In one embodiment, the silicon layer may be polysilicon. In a certain embodiment, a silicon layer is grown on the second dielectric layer in a thermal process and/or oven. In one embodiment, the second dielectric layer and the silicon layer may be grown in the same or a single oven and/or in the same or a single process operation.

In another embodiment, the silicon layer may be formed undoped. In one such embodiment, a dopant layer may be formed on the silicon layer, and a thermal process may be performed to drive dopants from the dopant layer into the silicon layer, resulting in a silicon layer having a second conductivity type (e.g., P-type or N-type). In a certain embodiment, forming the second semiconductor layer can include forming a first insulator layer on the silicon layer. In a certain embodiment, the first insulator layer can include silicon dioxide. In a certain example, a blanket deposition process may be performed to form the first insulator layer. In a certain embodiment, a first insulator layer can be formed to a thickness of less than or equal to about 1000 angstroms.

In a certain embodiment, the first dielectric layer may be formed in an oxidation process and is a thin oxide layer such as a tunnel dielectric layer (e.g., silicon oxide). In one embodiment, the first dielectric layer may be formed during the deposition process. In a certain embodiment, the first dielectric layer is a thin oxide layer or a silicon oxynitride layer. In a certain embodiment, the first dielectric layer may have a thickness of about 2 nanometers or less. In a certain example, forming the first dielectric layer on the portion of the second semiconductor layer and the portion of the substrate may include forming the first dielectric layer on the exposed portion of the second semiconductor layer and the exposed portion of the substrate. In one example, the exposed areas of the substrate and the second semiconductor layer may be formed after performing a patterning process to pattern the first insulator layer, the second semiconductor layer, and the second dielectric layer. As used herein, the first dielectric layer may also be referred to as a first thin dielectric layer.

With respect to forming the first semiconductor layer, in a certain embodiment, a silicon layer may be deposited over the first dielectric layer using a low pressure chemical vapor deposition process. In one embodiment, the silicon layer may be polysilicon. In a certain embodiment, a silicon layer is grown on the first dielectric layer in a thermal process and/or oven. In one embodiment, the first dielectric layer and the silicon layer may be grown in the same or a single oven and/or in the same or a single process operation. In a certain embodiment, the silicon layer may be formed undoped. In a certain embodiment, the silicon layer is an amorphous silicon layer. In one such embodiment, the amorphous silicon layer is formed using Low Pressure Chemical Vapor Deposition (LPCVD) or Plasma Enhanced Chemical Vapor Deposition (PECVD).

In another embodiment, forming the first semiconductor layer may include forming a silicon layer having a different conductivity type from the second semiconductor layer. In one such example, forming the silicon layer can include forming a pre-doped silicon layer. In one example, forming the silicon layer may include forming an N-type silicon layer over a first dielectric layer (e.g., a thin oxide layer). In an alternative embodiment, a P-type silicon layer is formed.

Referring to operation 804 of the flowchart 800 of fig. 8, the method of fabricating a solar cell further includes forming a second insulator layer over the first semiconductor layer.

In a certain embodiment, forming the first semiconductor layer over the back side of the substrate includes forming the first semiconductor layer on the first dielectric layer. Forming the first semiconductor layer may include: forming a silicon layer on the first dielectric layer; forming a second insulator layer over the silicon layer; patterning the silicon layer, the second insulator layer, and the first dielectric layer; and possibly, subsequently performing a thermal process to drive dopants from the second insulator layer into the silicon layer to form the first semiconductor layer. For example, in a certain embodiment, the second insulator layer can include a dopant layer, as described herein, wherein patterning the silicon layer, the second insulator layer, and the first dielectric layer can include patterning the first silicon layer, the dopant layer, and the first dielectric layer. In another example, the first semiconductor layer may be formed using screen printing, ink jet printing, or any other process for depositing a patterned silicon layer directly, as opposed to the above.

In a certain embodiment, wherein the second insulator layer may comprise a dopant layer, forming the first semiconductor layer may comprise performing a thermal process to drive dopants from the dopant layer into the silicon layer. In a certain embodiment, the conductivity type of the dopant is N-type, e.g., the dopant is a phosphorous and/or arsenic dopant. In a certain example, the thermal process can include heating to a temperature of approximately greater than or equal to 900 degrees celsius to drive dopants from the dopant layer into the first silicon layer. In some embodiments, the operation of patterning the first semiconductor layer may be performed after performing the thermal process. In some embodiments, for example, where the silicon layer is pre-doped or formed to include an N-type or P-type conductivity type, thermal processes may not need to be performed in this case.

Referring to operation 806 of the flowchart 800 of fig. 8, the method of fabricating a solar cell further includes forming an opening in the second insulator layer, the opening being over the second portion of the first semiconductor layer. A second opening is formed in the first insulator layer.

In a certain embodiment, the first insulator layer, the second semiconductor layer, and the second dielectric layer may be patterned to form an opening therein. In a certain embodiment, the first semiconductor layer may have a second insulator layer formed over the second semiconductor layer. In a certain embodiment, the opening may be formed in the second insulator layer in a patterning process used to form the second opening in the first insulator layer. In a certain embodiment, a photolithographic or screen-printing mask and a subsequent etching process may be used to pattern the first insulator layer and the second insulator layer and possibly the second semiconductor layer. In another embodiment, a laser ablation process (e.g., direct writing) may be used to pattern the first and second insulator layers and possibly the second semiconductor layer.

In a certain embodiment, the contact openings may be formed using a masking and etching process. In a certain example, a mask can be formed and a subsequent wet chemical etching process can be performed to form the contact openings. In some embodiments, a wet chemical cleaning process may be performed to remove the mask. In one embodiment, the patterning can include performing a laser patterning process (e.g., laser ablation) to form contact openings in the first insulator layer and the second insulator layer. In one embodiment, the patterning process for forming the contact openings in the first insulator layer and the second insulator layer may be performed in the same or a single operation (e.g., using a laser in the same or a single laser processing chamber), or alternatively may be performed separately (e.g., separate laser patterning processes may be used to form the contact openings in the first insulator layer and the second insulator layer). In a certain embodiment, wherein the second insulator layer may comprise a dopant layer, the patterning may comprise performing the operation of patterning the first insulator layer and the dopant layer in a single operation or separately to form the contact opening through the first insulator layer and the dopant layer.

Referring to operation 808 of the flowchart 800 of fig. 8, the method of fabricating a solar cell further includes forming a first conductive contact in the opening of the second insulator layer, the first conductive contact being electrically coupled to the second portion of the first semiconductor layer at a location below the opening of the second insulator layer. In one embodiment, the first conductive contact is further on a portion of the second insulator layer above the first insulator layer, and the first conductive contact is further on a portion of the second insulator layer above the first portion of the first semiconductor layer.

Referring to operation 810 of the flowchart 800 of fig. 8, the method of fabricating a solar cell further includes forming a second conductive contact in the second opening of the first insulator layer, the second conductive contact being electrically coupled to the second semiconductor layer at a location below the second opening of the first insulator layer.

In a certain embodiment, forming the conductive contact structure may include performing a sputtering process, locally depositing a metal, a blanket deposition process, a plating process, bonding a metal foil and/or a bond wire to the first semiconductor layer and the second semiconductor layer. In a certain example, the conductive contact structure can include locally deposited aluminum, aluminum foil, and/or aluminum wire. In a certain embodiment, the conductive contact structure may include one or more metals and/or metal alloys. In a certain example, the conductive contact structure can include aluminum, titanium tungsten, and/or copper, among other metals. In a certain embodiment, the conductive contact structure may include one, two, or more metal layers. In a certain example, the conductive contact structure can include a metal seed layer. In a certain embodiment, the metal seed layer may include a first layer, a second layer, and a third layer, wherein the first layer includes copper, the second layer includes tungsten, and the third layer includes aluminum.

In a certain embodiment, the first and second conductive contacts can be electrically connected to the first and second semiconductor layers (e.g., the first and second polysilicon layers) using a hot-pressing process. In a certain example, one or more wires can be adhered to the first semiconductor layer and the second semiconductor layer using a hot pressing process. In one embodiment, a metal foil may be bonded (e.g., soldered) to the first semiconductor layer and the second semiconductor layer. In a certain embodiment, forming the first and second conductive contacts may include performing a blanket deposition process. In a certain example, forming the first and second conductive contacts can include performing an electroplating process. In some examples, forming the first and second conductive contacts may include performing a blanket deposition process to form a metal seed layer, followed by plating metal and performing a patterning process to form the first and second conductive contacts. In a certain example, forming the first and second conductive contacts using a plating process can include placing the substrate in a bath to plate metal to the substrate and form the first and second conductive contacts. In another embodiment, the first conductive contact and the second conductive contact may be formed in one process operation using a localized metal deposition process.

It should be understood that, as used throughout, like reference numerals refer to like elements throughout. In an embodiment, the description regarding the first semiconductor layer 112, the first conductive contact 129, and/or the first insulator layer 112 of fig. 2 may also be applicable to or describe the first semiconductor layer 112, the first conductive contact 129, and/or the first insulator layer 112 of fig. 1. In a certain example, like reference numbers in fig. 1, 2A, 2B, 3, and 4-7 may refer to like elements throughout fig. 1, 2A, 2B, 3, and 4-7. It should also be understood that while certain materials have been specifically described with reference to the above embodiments, some of them may be readily substituted in such embodiments with other materials, which still remain within the spirit and scope of the embodiments of the present disclosure. For example, in certain embodiments, a substrate of a different material, such as a substrate of a III-V material, may be used in place of a silicon substrate. Additionally, while reference is primarily made to back contact solar cell arrangements, it is to be understood that the approaches described herein may also be applied to front contact solar cells. Furthermore, it is to be understood that where N + type and P + type doping are specifically described, other embodiments are contemplated that include opposite conductivity types, e.g., P + type and N + type doping, respectively.

Turning now to fig. 9, fig. 9 shows a cross-sectional view of a portion of a solar cell for comparison purposes. Referring to fig. 9, the solar cell 900 includes a substrate 906, a first semiconductor layer 912, and a second semiconductor layer 908. A first dielectric layer 920 is between the substrate 906 and the first semiconductor layer 912. A second dielectric layer 914 is between the substrate 906 and the second semiconductor layer 908. A third dielectric layer 916 is between the first semiconductor layer 912 and the second semiconductor layer 908. The first dielectric layer 910 has an opening 921 with a conductive contact 928 in the opening 921. The second dielectric layer 925 has an opening 923 with a conductive contact 929 in the opening 923. Unlike the above-described embodiments, the conductive contact 929 is formed in the opening 923 in or inside the emitter region of the solar cell 900. I.e., contact 929 is aligned with the associated emitter structure. This arrangement is susceptible to metal spiking and/or laser contact damage (e.g., the latter used in laser ablation processes to form contact openings, where the contact openings are within the perimeter of the emitter region).

In contrast, for solar cell 900, embodiments described herein may be less susceptible to metal spiking and/or laser contact damage, particularly where the laser scribe overlaps or at least partially overlaps the underlying emitter region. Advantages of implementing embodiments described herein may include, but are not necessarily limited or restricted to the following: (1) anti-metal spike formation; (2) laser contact eliminates one type of emitter structure; (3) many different emitter coverage can be achieved, e.g., very small floating contact coverage with large emitter perimeter; and/or (4) suitable for various types of metallization, such as plating, wire metallization, or laser assisted metallization processes. Although specific embodiments have been described above, even if only a single embodiment is described with respect to a particular feature, these embodiments are not intended to limit the scope of the present disclosure. Examples of features provided in the present disclosure are intended to be illustrative, and not restrictive, unless otherwise specified. The above description is intended to cover alternatives, modifications, and equivalents, which may be apparent to those skilled in the art having the benefit of this disclosure.

The scope of the present disclosure includes any feature or combination of features disclosed herein (either explicitly or implicitly), or any generalization thereof, whether or not it mitigates any or all of the problems addressed herein. Accordingly, new claims may be formulated to any such combination of features during the prosecution of the present application (or of an application claiming priority thereto). In particular, with reference to the appended claims, features from dependent claims may be combined with those of the independent claims and features from respective independent claims may be combined in any appropriate manner and not merely in the specific forms enumerated in the appended claims.