阅读说明：本技术 功率模块 (Power module ) 是由 椿谷贵史 山口公辅 于 2021-05-28 设计创作，主要内容包括：提供能够利用由将多个元件进行层叠带来的优点,并且不使用复杂的结构就能够降低分流电压带给控制元件的不良影响的功率模块。第2半导体开关元件(141b)与第1半导体开关元件(141a)串联连接,在厚度方向上与第1半导体开关元件(141a)至少局部地层叠。第1控制元件(102)对第1半导体开关元件(141a)以及第2半导体开关元件(141b)进行控制,参照分流电压而进行过电流保护动作。第1控制元件(102)在面内方向上与第1半导体开关元件(141a)以及第2半导体开关元件(141b)错开地配置。(Provided is a power module which can take advantage of the advantages of stacking a plurality of elements and can reduce the adverse effect of a shunt voltage on a control element without using a complicated structure. The 2 nd semiconductor switching element (141b) is connected in series with the 1 st semiconductor switching element (141a), and is at least partially stacked with the 1 st semiconductor switching element (141a) in the thickness direction. The 1 st control element (102) controls the 1 st semiconductor switching element (141a) and the 2 nd semiconductor switching element (141b), and performs an overcurrent protection operation with reference to the shunt voltage. The 1 st control element (102) is arranged offset from the 1 st semiconductor switching element (141a) and the 2 nd semiconductor switching element (141b) in the in-plane direction.)

1. A power module having a thickness direction and an in-plane direction perpendicular to the thickness direction,

the power module has:

1 st semiconductor switching element;

a 2 nd semiconductor switching element connected in series with the 1 st semiconductor switching element, and at least partially stacked with the 1 st semiconductor switching element in the thickness direction; and

a 1 st control element for controlling the 1 st semiconductor switching element and the 2 nd semiconductor switching element and performing an overcurrent protection operation with reference to a shunt voltage,

the 1 st control element is arranged to be shifted from the 1 st semiconductor switching element and the 2 nd semiconductor switching element in the in-plane direction.

2. The power module of claim 1,

further comprising:

a 1 st metal plate on which the 1 st semiconductor switching element is mounted; and

a 2 nd metal plate on which the 1 st control element is mounted, the 2 nd metal plate being separated from the 1 st metal plate,

the 2 nd metal plate is arranged to be shifted from the 1 st semiconductor switching element and the 2 nd semiconductor switching element in the in-plane direction.

3. The power module of claim 2,

the controller further includes a conductive bonding layer that mechanically bonds the 1 st control element to the 2 nd metal plate and electrically connects the 1 st control element to the 2 nd metal plate.

4. The power module of any of claims 1-3,

the 2 nd semiconductor switching element has a gate pad for receiving a control signal from the 1 st control element, the gate pad being arranged at least partially offset from the 1 st semiconductor switching element in the in-plane direction.

5. The power module of claim 4,

and a bonding wire having an end portion bonded to the gate pad of the 2 nd semiconductor switching element, the end portion of the bonding wire being arranged to be offset from the 1 st semiconductor switching element in the in-plane direction.

6. The power module of claim 4 or 5,

the 2 nd semiconductor switching element has 1 st to 4 th corner portions in the in-plane direction, and the gate pad of the 2 nd semiconductor switching element is disposed in the vicinity of the 4 th corner portion than the 1 st to 3 rd corner portions.

7. The power module of claim 1,

further comprising:

a 3 rd semiconductor switching element;

a 4 th semiconductor switching element connected in series with the 3 rd semiconductor switching element, the 4 th semiconductor switching element being at least partially stacked with the 3 rd semiconductor switching element in the thickness direction; and

a 2 nd control element that controls the 3 rd semiconductor switching element and the 4 th semiconductor switching element,

the 2 nd control element is arranged to be shifted from the 3 rd semiconductor switching element and the 4 th semiconductor switching element in the in-plane direction.

8. The power module of claim 7,

the semiconductor switch device further includes a 1 st metal plate, and the 1 st semiconductor switch element and the 3 rd semiconductor switch element are mounted on the 1 st metal plate.

9. The power module of claim 7 or 8,

and a 3 rd metal plate, wherein the 3 rd metal plate is bonded to the 2 nd semiconductor switching element and the 4 th semiconductor switching element.

Technical Field

The present invention relates to a power module, and more particularly, to a power module including a 1 st control element that controls a 1 st semiconductor switching element and a 2 nd semiconductor switching element.

Background

Japanese patent laying-open No. 2005-277014 (patent document 1) discloses a semiconductor device for operating a load. The semiconductor device has a 1 st support plate, a 1 st semiconductor switching element above the 1 st support plate, a 2 nd support plate above the 1 st semiconductor switching element, a 2 nd semiconductor switching element above the 2 nd support plate, a 3 rd support plate above the 2 nd semiconductor switching element, and a control element above the 3 rd support plate. The 1 st semiconductor switching element and the 2 nd semiconductor switching element are connected in series with each other. In operation, the 1 st support plate is connected to the positive side terminal of the dc power supply, and the 3 rd support plate is connected to the ground terminal of the dc power supply. The 3 rd support plate can act as a ground electrode for the control element. The control element gives a control signal to the 1 st semiconductor switching element and the 2 nd semiconductor switching element, and causes the 1 st semiconductor switching element and the 2 nd semiconductor switching element to alternately perform on-off operation.

By stacking a plurality of elements in the thickness direction as described above, various advantages are obtained. For example, the planar size of the semiconductor device can be reduced. In addition, the wiring structure between the elements can be simplified.

Japanese patent laid-open No. 2020-014315 (patent document 2) discloses a power semiconductor element. The power semiconductor element includes: a high potential side switching element; a load-side switching element connected in series with the high-potential-side switching element; a high potential side control circuit for controlling on/off drive of the high potential side switching element; a low potential side control circuit for controlling on/off drive of the low potential side switching element; and a current detection circuit. The current flowing through the low-potential-side switching element is converted into a shunt voltage by a shunt resistor connected between the load-side switching element and a line having a reference potential. The current detection circuit detects the occurrence of an overcurrent when the shunt voltage exceeds a predetermined threshold value, and transmits an overcurrent detection signal to the drive circuit. The drive circuit turns off the low-potential-side switching element if it receives the overcurrent detection signal. This enables an overcurrent protection operation.

Patent document 1: japanese patent laid-open publication No. 2005-277014

Patent document 2: japanese patent laid-open No. 2020 and 014315

In the technique of japanese patent laid-open No. 2005-277014, the potential on the reference potential side of the 2 nd semiconductor switching element (opposite side to the side connected to the 1 st semiconductor switching element as the high potential side switching element) as the low potential side switching element is equal to the potential of the 3 rd supporting plate. On the other hand, the reference potential of the control element is also equal to the potential of the 3 rd support plate. Therefore, the potential on the reference potential side of the low-potential-side switching element is equal to the reference potential of the control element. Therefore, if a shunt resistor is provided between the reference potential side of the low-potential side switching device and the reference potential, the reference potential of the control device also varies in accordance with the variation of the shunt voltage. Due to this potential variation, an excessive current flows through the wiring of the control element, and thermal destruction may occur. The generation of this current is avoided by using a floating power supply as a power supply for driving the control element. However, the use of the floating power supply complicates the circuit of the semiconductor device. In order to avoid such a complicated problem, when a shunt resistor is used, a configuration is generally used in which the reference potential side of the low-potential side switching element and the reference potential portion of the control element are not short-circuited.

Disclosure of Invention

According to the study of the present inventors, even when the above-described configuration is used, when all of the plurality of elements are stacked, the reference potential of the control element is varied due to variation in the shunt voltage via capacitive coupling between the elements. The magnitude of this potential variation needs to be suppressed to such an extent that the above-described problem of thermal destruction can be sufficiently avoided. This results in a limitation in the amount of current that can be generated by the semiconductor device. The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a power module capable of utilizing advantages resulting from stacking a plurality of elements and reducing adverse effects of a shunt voltage on a control element without using a complicated configuration.

The power module according to the present invention has a thickness direction and an in-plane direction perpendicular to the thickness direction. The power module has a 1 st semiconductor switching element, a 2 nd semiconductor switching element, and a 1 st control element. The 2 nd semiconductor switching element is connected in series with the 1 st semiconductor switching element, and the 2 nd semiconductor switching element is at least partially stacked with the 1 st semiconductor switching element in the thickness direction. The 1 st control element controls the 1 st semiconductor switching element and the 2 nd semiconductor switching element, and performs an overcurrent protection operation with reference to the shunt voltage. The 1 st control element is arranged offset from the 1 st semiconductor switching element and the 2 nd semiconductor switching element in the in-plane direction.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present invention, the 2 nd semiconductor switching element and the 1 st semiconductor switching element are at least partially stacked. This makes it possible to take advantage of the advantage of stacking a plurality of elements. On the other hand, the 1 st control element is arranged to be shifted from the 1 st semiconductor switching element and the 2 nd semiconductor switching element in the in-plane direction. In other words, the 1 st control element is not stacked with the 1 st semiconductor switching element and the 2 nd semiconductor switching element. The 1 st semiconductor switching element and the 2 nd semiconductor switching element have potentials that vary in accordance with the shunt voltage, but according to the above arrangement, variation of the reference potential of the 1 st control element due to the variation via capacitive coupling is suppressed. Therefore, the adverse effect of the shunt voltage on the control element can be reduced without using a complicated structure. As described above, the advantage of stacking a plurality of elements can be utilized, and the adverse effect of the shunt voltage on the control element can be reduced without using a complicated configuration.

Drawings

Fig. 1 is a diagram schematically showing a configuration of a system including a power module according to embodiment 1.

Fig. 2 is a plan view schematically showing the power module and the shunt resistor of fig. 1.

Fig. 3 is a schematic side view of fig. 2 from the viewpoint of arrow III.

Fig. 4 is a diagram schematically showing the configuration of a system having a power module of a comparative example.

Fig. 5 is a plan view schematically showing the configuration of the power module and the shunt resistor according to embodiment 2.

Fig. 6 is a plan view schematically showing the structure of a power module according to embodiment 3.

Detailed Description

Hereinafter, embodiments will be described with reference to the drawings. In the following drawings, the same or corresponding portions are denoted by the same reference numerals, and description thereof will not be repeated.

< embodiment 1 >

Fig. 1 schematically shows a configuration of a system 701, and the system 701 includes a load 900 according to embodiment 1 and a load driving device 601 for driving the load 900. Fig. 2 is a plan view schematically showing the structure of the load driving device 601, and fig. 3 is a schematic side view as viewed from arrow III (fig. 2). The load driving device 601 includes a power module 501 and a shunt resistor 3. Further, in fig. 2 and 3, an XYZ rectangular coordinate system is shown, in which the Z direction of the coordinate system corresponds to the thickness direction of the power module 501, and the XY direction of the coordinate system corresponds to the in-plane direction of the power module 501 perpendicular to the thickness direction.

The power module 501 includes a high-side potential switching device 141a (1 st semiconductor switching device), a low-side potential switching device 141b (2 nd semiconductor switching device), and a control device 102 (1 st control device). In addition, the power module 501 has a case 9, a metal plate 121 (1 st metal plate), a metal plate 122 (2 nd metal plate), a metal plate 123 (3 rd metal plate), and a metal plate 124 (4 th metal plate).

The low-potential side switching device 141b is connected in series with the high-potential side switching device 141 a. The high-side switching element 141a and the low-side switching element 141b are each a switching element such as a MISFET (Metal Insulator Semiconductor Field Effect Transistor) or an IGBT (Insulated Gate Bipolar Transistor). As shown in fig. 1, the switching element may be internally or externally loaded with a freewheeling diode. The high-side switching element 141a and the low-side switching element 141b each have a gate pad 151a and a gate pad 151b for receiving a control signal from the control element 102.

The control device 102 controls the high-side switching device 141a and the low-side switching device 141 b. Specifically, the control element 102 transmits a control signal to the gate pad 151a and the gate pad 151b according to an external signal. The control element 102 refers to the shunt voltage and performs an overcurrent protection operation as necessary. The control element 102 may be configured as 1 component as shown in fig. 2 and 3, or may be configured as a modification of a component that controls the high-potential-side switching element 141a and a component that controls the low-potential-side switching element 141 b.

In addition, the power module 501 has a P terminal 106 (high voltage input terminal), an output terminal 107, an N terminal 108 (reference potential side terminal), a Vcc terminal 109 (power supply terminal), a Vin-a terminal 110 (1 st external signal input terminal), a Vin-b terminal 111 (2 nd external signal input terminal), a GND terminal 112 (reference potential terminal), and a Cin terminal 113 (shunt voltage input terminal). These terminals are exposed to the outside from the inside of the housing 9 of the power module 501, and typically protrude as shown in fig. 2.

In the present embodiment, the shunt resistor 3 is disposed outside the case 9. As a modification, the shunt resistor 3 may be disposed inside the case 9, and thus the load driving device 601 including the shunt resistor 3 is configured as one power module.

The load 900 is connected to the output terminal 107, and thus a current for driving the load 900 is supplied from the output terminal 107. A reference potential (ground potential) is applied to the GND terminal 112. A reference potential is applied to each of the N terminal 108 and the Cin terminal 113 via the shunt resistor 3. A positive voltage (dc voltage) with respect to the reference potential is applied to the P terminal 106. The power supply 4 that generates a power supply voltage corresponding to a reference potential is connected to the Vcc terminal 109 (power supply terminal), and the control element 102 is operated using the power supply voltage. The Vin-a terminal 110 and the Vin-b terminal 111 receive control signals for the high-side switching element 141a and the low-side switching element 141b, respectively.

As shown in fig. 2 and 3, the output terminal 107 may be formed as 1 metal member together with the metal plate 124. The GND terminal 112 may be short-circuited to the metal plate 122 by the bonding wire 8 (wiring member) as shown in fig. 2, or may be configured as 1 metal member together with the metal plate 122 as a modification. The N terminal 108 may be configured as 1 metal member together with the metal plate 123 as shown in fig. 2. The P terminal 106 may be configured as 1 metal member together with the metal plate 121 as shown in fig. 2. The Cin terminal 113, Vcc terminal 109, Vin-a terminal 110, and Vin-b terminal 111 may be connected to the control element 102 by bonding wires 8 as shown in fig. 2.

The high-potential side switching element 141a is mounted on the metal plate 121 via the conductive bonding layer 14. On the high-potential side switching element 141a, a metal plate 124 is bonded via a conductive bonding layer 14. The low-potential-side switching element 141b is mounted on the metal plate 124 via the conductive bonding layer 14. A metal plate 123 is bonded to the low-potential-side switching element 141b via a conductive bonding layer 14.

With the above configuration, the low-potential-side switching element 141b is at least partially stacked with the high-potential-side switching element 141a via the metal plate 124 in the thickness direction. In the structure shown in fig. 2, the low-potential side switching element 141b is partially stacked with the high-potential side switching element 141a in the thickness direction such that the gate pad 151a of the high-potential side switching element 141a is shifted from the low-potential side switching element 141b in the in-plane direction. The power module 501 has a bonding wire 8, and the bonding wire 8 has one end portion bonded to the gate pad 151a and the other end portion bonded to the control element 102. In addition, the power module 501 has a bonding wire 8, and the bonding wire 8 has one end portion bonded to the gate pad 151b and the other end portion bonded to the control element 102. Thereby, the gate pads 151a and 151b are electrically connected to the control elements 102, respectively.

The metal plate 122 is separated from the metal plate 121. In the present embodiment, a reference potential is applied to the metal plate 122, and a positive voltage is applied from the P terminal 106 to the metal plate 121. The control element 102 is mounted on the metal plate 122 via the conductive bonding layer 15. The conductive bonding layer 15 mechanically bonds the control element 102 to the metal plate 122, and electrically connects the control element 102 and the metal plate 122. In the case where the metal plate 122 and the GND terminal 112 are integrated or electrically connected by the bonding wire 8, an insulating bonding layer may be used instead of the conductive bonding layer 15 as a modification, and the potential of the metal plate 121 may be set to the reference potential.

As shown in fig. 2, the control element 102 is arranged to be shifted from the high-potential side switching element 141a and the low-potential side switching element 141b in the in-plane direction. As shown in fig. 2, the metal plate 122 is disposed so as to be shifted from the high-potential-side switching element 141a and the low-potential-side switching element 141b in the in-plane direction.

Fig. 4 is a diagram schematically showing the structure of a system 700 of a comparative example. Unlike the present embodiment, the power module 500 of the system 700 is configured such that the control element 102 is bonded to the metal plate 123 (see fig. 2) via an insulating bonding layer. Therefore, in the comparative example, the control element 102 is not arranged to be shifted from the high-potential side switching element 141a and the low-potential side switching element 141b in the in-plane direction. As a result, a coupling capacitance 5 is generated between the portion of the control element 102 that is desired to be maintained at the reference potential and the metal plate 123 to which the shunt voltage is applied from the N terminal 108. Therefore, the variation in the shunt voltage varies the potential of the portion of the control element 102 that is desired to be maintained at the reference potential via the coupling capacitor 5. Due to this potential variation, an excessive current flows through the wiring of the control element 102, and thermal destruction may occur. The generation of this current is avoided by using a floating power supply as the power supply 4 that drives the control element 102. However, the use of a floating power supply complicates the circuitry of the system 700.

According to the present embodiment, the low-potential side switching element 141b and the high-potential side switching element 141a are at least partially stacked. This makes it possible to take advantage of the advantage of stacking a plurality of elements. On the other hand, the control element 102 is arranged to be shifted from the high-potential side switching element 141a and the low-potential side switching element 141b in the in-plane direction. In other words, the control element 102 is not stacked on the high-side switching element 141a and the low-side switching element 141 b. The high-side switching element 141a and the low-side switching element 141b have potentials that vary according to the shunt voltage, but according to the above arrangement, variation of the reference potential of the control element 102 due to the variation is suppressed via the coupling capacitor 5 (fig. 4). Therefore, the adverse effect of the shunt voltage on the control element 102 can be reduced without using a complicated structure. As described above, the control element 102 can be reduced in adverse effect of the shunt voltage without using a complicated configuration while taking advantage of the advantage of stacking a plurality of elements.

As shown in fig. 2, the metal plate 122 is arranged to be shifted from the high-potential side switching element 141a and the low-potential side switching element 141b in the in-plane direction. The high-side switching element 141a and the low-side switching element 141b have potentials that vary according to the shunt voltage, but according to the above arrangement, variation in the potential of the metal plate 122 due to the variation is suppressed via the coupling capacitor 5 (fig. 4). Therefore, when the potential of the metal plate 122 corresponds to the reference potential of the control element 102, the adverse effect of the shunt voltage on the control element 102 can be further reduced.

A conductive bonding layer 15 (fig. 3) is provided between the metal plate 122 and the control element 102. This facilitates the configuration in which the potential of the metal plate 122 corresponds to the reference potential of the control element 102.

< embodiment 2 >

Fig. 5 is a plan view schematically showing the configuration of the power module 502 and the shunt resistor 3 according to embodiment 2. The gate pad 151b is at least partially, preferably entirely, displaced from the high-potential-side switching element 141a in the in-plane direction, as shown in fig. 5. The end ED of the bonding wire 8 bonded to the gate pad 151b is arranged to be shifted from the high-potential-side switching element 141a in the in-plane direction. The low-potential-side switching element 141b has 1 st to 4 th corners C1 to C4 in the in-plane direction, and the gate pad 151b of the low-potential-side switching element 141b is disposed in the vicinity of the 4 th corner C4 with respect to the 1 st to 3 rd corners C1 to C3.

Since the configuration other than the above is substantially the same as that of embodiment 1, the same reference numerals are given to the same or corresponding elements, and the description thereof will not be repeated.

According to the present embodiment, the gate pad 151b is at least partially arranged to be offset from the high-potential side switching element 141a in the in-plane direction. This can reduce damage to the high-side switching element 141a caused by a process for obtaining electrical connection with the gate pad 151b of the low-side switching element 141 b. Specifically, the semiconductor chip serving as the high-potential-side switching element 141a can be prevented from cracking or chipping. Therefore, the yield is improved in manufacturing the power module 502, and thus, the productivity is improved.

The end of the bonding wire is arranged to be shifted from the high-potential-side switching element 141a in the in-plane direction. This can reduce damage to the high-side switching element 141a caused by the bonding step of the bonding wire.

The gate pad 151b of the low-potential-side switching element 141b is disposed in the vicinity of the 4 th corner C4. Thus, the area of the portion of the low-potential-side switching element 141b stacked on the high-potential-side switching element 141a can be secured to be large, and the gate pad 151b of the low-potential-side switching element 141b can be displaced from the high-potential-side switching element 141a at least partially in the in-plane direction.

< embodiment 3 >

Fig. 6 is a plan view schematically showing the structure of a power module 503 according to embodiment 3.

The power module 503 includes a high-side switching device 241a (3 rd semiconductor switching device), a low-side switching device 241b (4 th semiconductor switching device), and a control device 202 (2 nd control device) for controlling the high-side switching device 241a and the low-side switching device 241 b. The low-potential side switching device 241b is connected in series with the high-potential side switching device 241a, and is at least partially stacked with the high-potential side switching device 241a in the thickness direction. The control device 202 controls the high-side switching device 241a and the low-side switching device 241 b. The control element 202 is arranged to be shifted from the high-potential side switching element 241a and the low-potential side switching element 241b in the in-plane direction.

The power module 503 includes a high-side switching element 341a (5 th semiconductor switching element), a low-side switching element 341b (6 th semiconductor switching element), and a control element 302 (3 rd control element) for controlling the high-side switching element 341a and the low-side switching element 341 b. The low-potential-side switching element 341b is connected in series with the high-potential-side switching element 341a, and is at least partially stacked with the high-potential-side switching element 341a in the thickness direction. The control element 302 controls the high-side switching element 341a and the low-side switching element 341 b. The control element 302 is arranged to be shifted from the high-side switching element 341a and the low-side switching element 341b in the in-plane direction.

In addition, the power module 503 has a P terminal 206, an output terminal 207, an N terminal 208, a Vcc terminal 209, a Vin-a terminal 210, a Vin-b terminal 211, a GND terminal 212, and a Cin terminal 213. In addition, the power module 503 has a P terminal 306, an output terminal 307, an N terminal 308, a Vcc terminal 309, a Vin-a terminal 310, a Vin-b terminal 311, a GND terminal 312, and a Cin terminal 313.

According to the above configuration, the power module 503 can generate three-phase alternating current from the output terminal 107, the output terminal 207, and the output terminal 307 by inputting external signals to the Vin-a terminal 110, the Vin-b terminal 111, the Vin-a terminal 210, the Vin-b terminal 211, the Vin-a terminal 310, and the Vin-b terminal 311 with appropriate phases.

In the present embodiment, the high-potential-side switching element 141a, the high-potential-side switching element 241a, and the high-potential-side switching element 341a are mounted on the metal plate 121 via the conductive bonding layer 14 (see fig. 3). The metal plate 123 is bonded to the low-potential-side switching element 141b, the low-potential-side switching element 241b, and the low-potential-side switching element 341b via the conductive bonding layer 14 (see fig. 3).

Since the other configurations are substantially the same as those of embodiment 1 or 2, the same or corresponding elements are denoted by the same reference numerals, and description thereof will not be repeated.

According to the present embodiment, not only the control by the high-side switching element 141a and the low-side switching element 141b, but also the control by the high-side switching element 241a and the low-side switching element 241b is performed. Therefore, control of multiple phases rather than single phase is possible. By performing control by the high-side switching element 341a and the low-side switching element 341b, three-phase control can be performed.

Both the high-potential side switching element 141a and the high-potential side switching element 241a are mounted on the metal plate 121. Thus, a common potential can be supplied to both the high-potential-side switching element 141a and the high-potential-side switching element 241a with a simple configuration. In the present embodiment, the high-potential-side switching element 341a is further mounted on the metal plate 121, which is further simplified. This simplification enables the area of the power module 503 in the in-plane direction to be reduced. In addition, as a modification, separate metal plates may be provided for each of the high-potential-side switching element 141a, the high-potential-side switching element 241a, and the high-potential-side switching element 341 a.

The metal plate 123 is joined to both the low-potential-side switching element 141b and the low-potential-side switching element 241 b. Thus, a common potential can be supplied to both the low-potential-side switching element 141b and the low-potential-side switching element 241b with a simple configuration. In the present embodiment, the metal plate 123 is also joined to the low-potential-side switching element 341b, which is further simplified. This simplification enables the area of the power module 503 in the in-plane direction to be reduced. In addition, as a modification, separate metal plates may be provided for the low-potential-side switching element 141b, the low-potential-side switching element 241b, and the low-potential-side switching element 341b, respectively.

Further, the respective embodiments may be freely combined, or may be appropriately modified or omitted.

Description of the reference numerals

3 shunt resistor, 4 power source, 5 coupling capacitor, 8 bonding wire, 9 case, 14, 15 conductive bonding layer, 102 1 st control element, 106P terminal, 107 output terminal, 108N terminal, 109Vcc terminal, 110Vin-a terminal, 111Vin-b terminal, 112GND terminal, 113Cin terminal, 121 to 124 1 st to 4 th metal plates, 141a high potential side switching element (1 st semiconductor switching element), 141b low potential side switching element (2 nd semiconductor switching element), 151a, 151b gate pad, 202 nd 2 control element, 206P terminal, 207 output terminal, 208N terminal, 209Vcc terminal, 210Vin-a terminal, 211Vin-b terminal, 212GND terminal, 241a high potential side switching element (3 rd semiconductor switching element), 241b low potential side switching element (4 th semiconductor switching element), 302 rd 3 control element, 306P terminal, 307 output terminal, 308N terminal, 309Vcc terminal, 310Vin-a terminal, 311Vin-b terminal, 312GND terminal, 313Cin terminal, 341a high potential side switching element (5 th semiconductor switching element), 341b low potential side switching element (6 th semiconductor switching element), 500 to 503 power modules, 601 load driving device, 700, 701 system, 900 load, C1 to C4 1 st to 4 th corner.