阅读说明：本技术 基于薄膜工艺的薄膜准带状线传输结构及其制备方法 (Thin film quasi-strip line transmission structure based on thin film process and preparation method thereof ) 是由 张勇 刘晓宇 魏浩淼 邓乐 延波 于 2021-09-10 设计创作，主要内容包括：本发明公开了一种基于薄膜工艺的薄膜准带状线传输结构,包括上腔体、下腔体和薄膜传输线；上腔体和下腔体结构对称,上下腔体形成闭合屏蔽腔；薄膜传输线沿着屏蔽腔中心线插入屏蔽腔内。本发明不仅大幅度减少了太赫兹信号传输时产生的介质损耗,而且提高了品质因数(Q值),减少了色散效应。同时这种新型薄膜准带状线传输结构,不仅可以提高传输特征阻抗的变化范围,降低了电路的匹配难度；还可以增大太赫兹固态电路的电路尺寸,从而大幅降低电路装配的难度。最关键的,此传输结构在太赫兹单片集成电路工艺中不需要对外延结构进行任何修改,大幅度降低了外延成本。本发明结构简单,易于实现,在太赫兹固态电路中具有良好的应用前景。(The invention discloses a thin film quasi-stripline transmission structure based on a thin film process, which comprises an upper cavity, a lower cavity and a thin film transmission line, wherein the upper cavity is provided with a first cavity; the upper cavity and the lower cavity are symmetrical in structure, and the upper cavity and the lower cavity form a closed shielding cavity; the film transmission line is inserted into the shielding cavity along the central line of the shielding cavity. The invention not only greatly reduces the dielectric loss generated during the transmission of the terahertz signal, but also improves the quality factor (Q value) and reduces the dispersion effect. Meanwhile, the novel film quasi-stripline transmission structure can improve the variation range of transmission characteristic impedance and reduce the matching difficulty of a circuit; the circuit size of the terahertz solid-state circuit can be increased, and therefore the difficulty of circuit assembly is greatly reduced. Most importantly, the transmission structure does not need to modify the epitaxial structure in the terahertz monolithic integrated circuit process, so that the epitaxial cost is greatly reduced. The terahertz solid-state circuit is simple in structure, easy to implement and good in application prospect in terahertz solid-state circuits.)

1. The thin film quasi-stripline transmission structure based on the thin film process is characterized by comprising an upper cavity, a lower cavity and a thin film transmission line; the upper cavity and the lower cavity are symmetrical in structure, and the upper cavity and the lower cavity form a closed shielding cavity; the film transmission line is inserted into the shielding cavity along the central line of the shielding cavity.

2. The thin film quasi stripline transmission structure based on a thin film process as claimed in claim 1, wherein the thin film transmission line comprises a support film and a center transmission line, and the center transmission line is attached to the support film or completely wrapped by the support film.

3. The thin film quasi stripline transmission structure based on the thin film process as claimed in claim 2, wherein the thin film transmission line is equidistant from the upper cavity and the lower cavity, and the central transmission line is located at the middle of the closed shielded cavity.

4. The thin film quasi stripline transmission structure based on the thin film process as claimed in claim 2, wherein the thin film transmission line is supported between the upper cavity and the lower cavity or directly bonded on the lower cavity in a metal cantilever manner, and the thickness of the supporting thin film in the thin film transmission line is several micrometers.

5. The method for preparing the thin film quasi-stripline transmission structure based on the thin film process as claimed in any one of claims 1 to 4, comprising the following steps:

s1, spin-coating the whole semiconductor wafer with the metal of the central transmission line with the polymer material dissolved in the organic solvent, and polymerizing the polymer material into a polymer chain through high temperature so as to solidify and form a film;

s2, etching the film by a plasma etching method to reserve the shape required by the transmission structure;

s3, after the film is etched according to the requirement of the transmission structure, removing the semiconductor wafer substrate by a substrate removing technology, and only reserving the film and the central transmission line wrapped by the film;

and S4, inserting the film transmission line with the substrate removed into the shielding cavity along the center line of the shielding cavity, and closing the shielding line to complete the film quasi-strip line transmission structure.

Technical Field

The invention belongs to the technical field of electromagnetic wave transmission, and particularly relates to a thin film quasi-stripline transmission structure based on a thin film process and a preparation method thereof.

Background

Terahertz (THz) waves refer to electromagnetic waves with the frequency within the range of 0.1-10 THz (the corresponding wavelength is 3 mm-30 um), the long wave band of the THz waves is adjacent to millimeter waves, and the short wave band is close to infrared rays and is positioned in the crossing region of electronics and photonics. Compared with the microwave of a lower frequency band, the characteristics of the microwave are as follows: 1. the used frequency spectrum range is wide, and the information capacity is large. 2. The antenna with narrow beam and high gain is easy to realize, thus the resolution is high and the anti-interference performance is good. 3. The plasma penetration ability is strong. 4. The Doppler frequency shift is large, and the speed measurement sensitivity is high. Waves are of great significance in communication, radar, guidance, remote sensing technology, radio astronomy and wave spectroscopy.

The terahertz transmitting and receiving system is a core component in application of the terahertz system, and the terahertz solid-state circuit is an important mode for realizing the terahertz transmitting and receiving system and mainly comprises circuit forms such as a frequency mixer, a frequency multiplier, a filter and an amplifier. The transmission loss of the traditional terahertz transmission structure in a high-frequency terahertz frequency band (the frequency is more than 0.5THz) is too large, and the overall performance of the monolithic terahertz solid-state circuit is seriously influenced. The loss during transmission can be reduced by adopting a substrate-free technology, but the method needs special processing on a wafer epitaxial structure, and a layer of 3um intrinsic semiconductor layer for supporting is extended between the substrate and the epitaxial structure, so that the difficulty and the cost of the epitaxial technology are greatly improved.

Disclosure of Invention

The invention aims to overcome the defects of the prior art, provides a thin film quasi-strip line transmission structure based on a thin film process, which can greatly reduce the dielectric loss generated during the transmission of terahertz signals, improve the quality factor and reduce the dispersion effect, does not need to modify an epitaxial structure in the terahertz monolithic integrated circuit process, and greatly reduces the epitaxial cost, and provides a preparation method of the thin film quasi-strip line transmission structure.

The purpose of the invention is realized by the following technical scheme: the thin film quasi-stripline transmission structure based on the thin film process comprises an upper cavity, a lower cavity and a thin film transmission line; the upper cavity and the lower cavity are symmetrical in structure, and the upper cavity and the lower cavity form a closed shielding cavity; the film transmission line is inserted into the shielding cavity along the central line of the shielding cavity.

Further, the thin film transmission line comprises a supporting thin film and a central transmission line, wherein the central transmission line is attached to the supporting thin film or is completely wrapped by the supporting thin film. The distance between the film transmission line and the upper cavity is equal to that between the film transmission line and the lower cavity, and the central transmission line is positioned in the middle of the closed shielding cavity. The thin film transmission line is supported between the upper cavity and the lower cavity in a metal cantilever beam mode or directly adhered to the lower cavity, and the thickness of a supporting thin film in the thin film transmission line is several microns.

Another object of the present invention is to provide a method for manufacturing a thin film quasi stripline transmission structure based on a thin film process, comprising the following steps:

s1, spin-coating the whole semiconductor wafer with the metal of the central transmission line with the polymer material dissolved in the organic solvent, and polymerizing the polymer material into a polymer chain through high temperature so as to solidify and form a film;

s2, etching the film by a plasma etching method to reserve the shape required by the transmission structure;

s3, after the film is etched according to the requirement of the transmission structure, removing the semiconductor wafer substrate by a substrate removing technology, and only reserving the film and the central transmission line wrapped by the film;

and S4, inserting the film transmission line with the substrate removed into the shielding cavity along the center line of the shielding cavity, and closing the shielding line to complete the film quasi-strip line transmission structure.

The invention has the beneficial effects that: the thickness of the supporting film is several micrometers, when the supporting film is applied to a high-frequency terahertz solid-state circuit, the dielectric constant of the transmission structure is close to that of air, and the transmission mode is the same as that of an air-filled strip line; the dielectric loss generated during the transmission of the terahertz signal is greatly reduced, the quality factor (Q value) is improved, and the dispersion effect is reduced. Meanwhile, the novel film quasi-stripline transmission structure can improve the variation range of transmission characteristic impedance and reduce the matching difficulty of a circuit; the circuit size of the terahertz solid-state circuit can be increased, and therefore the difficulty of circuit assembly is greatly reduced. Most importantly, the transmission structure does not need to modify the epitaxial structure in the terahertz monolithic integrated circuit process, so that the epitaxial cost is greatly reduced. The terahertz solid-state circuit is simple in structure, easy to implement and good in application prospect in terahertz solid-state circuits.

Drawings

FIG. 1 is a schematic structural diagram of a thin film quasi-stripline transmission structure based on a thin film process according to the present invention;

FIG. 2 is a schematic view of polymer material coating;

FIG. 3 is a schematic diagram of a thin film etch;

FIG. 4 is a schematic view of substrate removal;

fig. 5 is an assembly diagram of a thin film transmission line.

Detailed Description

According to the invention, the metal transmission line is supported by the traditional monolithic hard material substrate of the thin-film quasi-strip line transmission line, so that low-loss transmission of signals on the monolithic integrated terahertz solid-state circuit is realized. The technical scheme of the invention is further explained by combining the attached drawings.

As shown in fig. 1, the thin film quasi stripline transmission structure based on the thin film process of the present invention includes an upper cavity, a lower cavity and a thin film transmission line; the upper cavity and the lower cavity are symmetrical in structure, and the upper cavity and the lower cavity form a closed shielding cavity; the film transmission line is inserted into the shielding cavity along the central line of the shielding cavity.

The thin film transmission line comprises a supporting thin film and a central transmission line, wherein the central transmission line is attached to the supporting thin film or is completely wrapped by the supporting thin film.

The distance between the film transmission line and the upper cavity is equal to that between the film transmission line and the lower cavity, and the central transmission line is located in the middle of the closed shielding cavity.

Supporting metal walls are arranged on two sides of the thin film transmission line, and the thin film transmission line is supported between the upper cavity and the lower cavity in a metal cantilever beam mode; or directly adhered to the lower cavity. The thickness of the supporting film in the thin film transmission line is several micrometers, and the supporting film has an extremely small relative dielectric constant, and the overall equivalent relative dielectric constant of the transmission structure is close to 1. The transmission structure can realize low-loss transmission of terahertz signals (particularly signals with frequencies higher than 0.5 THz). And because the upper and lower surfaces of the film can be grown with metal, the circuit mode with specific functions can be realized.

The film transmission line is inserted into the rectangular shielding cavity along the center line of the shielding cavity, the width w of the shielding cavity, the distance h from the upper cavity wall to the film and the distance h from the lower cavity wall to the film and the thickness h1 of the film. The single-mode transmission of the transmission structure in a required frequency band is realized by adjusting the width w of the shielding cavity, the distance h from the upper cavity wall to the film, and the thickness h1 of the film. The above work can be simulated by a commercial electromagnetic field simulation tool. The size of the shielding cavity obtained by optimization is increased as much as possible on the premise of meeting single-mode transmission, so that the loss and the assembly difficulty are reduced.

The invention discloses a method for preparing a film quasi-stripline transmission structure based on a film process, which comprises the following steps of:

s1, spin-coating the whole semiconductor wafer with the metal of the central transmission line with the polymer material dissolved in the organic solvent, and polymerizing the polymer material into polymer chains through high temperature to form a film through solidification. As shown in fig. 2. When the thin film is coated, the thickness consistency and the surface smoothness of the thin film need to be ensured, and the condition of excessive accumulation of an electric field can not occur in the signal transmission process, so that the power loss in transmission is reduced.

S2, etching the film by a plasma etching method to reserve the shape required by the transmission structure; it is particularly noted that the method can realize the processing of the special-shaped circuit, as shown in fig. 3. The etching conditions are required to ensure that the etching section is steep and has no burrs. The mask has to have a high selectivity ratio for the etching gas to ensure that the remaining film portion is not damaged by the etching gas.

And S3, after the thin film is etched according to the transmission structure, removing the semiconductor wafer substrate by using a substrate removing technology, and only keeping the thin film and wrapping the central transmission line by the thin film, as shown in FIG. 4. The thin film and the device epitaxy are not damaged in the process of removing the substrate, and the circuit based on the transmission structure can work normally.

S4, inserting the thin film transmission line with the substrate removed into the shielding cavity along the central line of the shielding cavity, and closing the shielding line, thereby completing the thin film quasi-stripline transmission structure, as shown in fig. 5. The cavity must guarantee the strict symmetry of the upper and lower cavities and the smoothness of the symmetrical surface of the cavity, and after the upper and lower cavities are overlapped, a tight waveguide and shielding cavity is formed. The inner walls forming the waveguides must also be smooth to minimize power loss.

It will be appreciated by those of ordinary skill in the art that the embodiments described herein are intended to assist the reader in understanding the principles of the invention and are to be construed as being without limitation to such specifically recited embodiments and examples. Those skilled in the art can make various other specific changes and combinations based on the teachings of the present invention without departing from the spirit of the invention, and these changes and combinations are within the scope of the invention.