Perovskite light absorption layer material and method
阅读说明：本技术 一种钙钛矿吸光层材料及方法 (Perovskite light absorption layer material and method ) 是由 宗迎夏 刘玉梅 宗成中 于 2021-06-16 设计创作，主要内容包括：本发明提供一种钙钛矿吸光层材料及方法,其包括CsSnI-3钙钛矿材料,并且还包含有增强材料,增强材料为石墨烯和SnF-2的掺杂物。在制备方法中,在石墨烯片上通过浸渍法负载得到有SnF-2的石墨烯片；通过真空热蒸发沉积的方式制得负载CsI薄膜的二次基片,然后以CsI薄膜为基础再次沉积得到SnI-2薄膜负载的结构；以得到具有掺杂SnF-2石墨烯片的CsSnI-3钙钛矿薄膜材料通过石墨烯和SnF-2的掺杂物的加入,使得CsSnI-3钙钛矿材料转换效率得到了明显的提升,并且这种转换效率高于单独的CsSnI-3钙钛矿材料和掺杂SnF-2的CsSnI-3钙钛矿材料；另外,这种材料中不使用对于环境具有破坏作用的铅元素,极大地提高了这种材料的安全性和环境保护作用,具有很好的应用价值。(The invention provides a perovskite light absorption layer material and a method thereof, which comprises CsSnI 3 Perovskite material, and reinforcing material which is graphene and SnF 2 The dopant (c). In the preparation method, SnF is obtained by loading graphene sheets by an immersion method 2 The graphene sheet of (a); preparing a secondary substrate loaded with the CsI film by a vacuum thermal evaporation deposition mode, and then depositing again on the basis of the CsI film to obtain SnI 2 A film-loaded structure; to obtain a doped SnF 2 CsSnI of graphene sheet 3 The perovskite thin film material passes through graphene and SnF 2 Such that CsSnI is added 3 The conversion efficiency of the perovskite material is obviously improved and is higher than that of CsSnI alone 3 Perovskite materials and doped SnF 2 CsSnI of 3 A perovskite material; in addition, lead element which has a destructive effect on the environment is not used in the material, so that the safety and the environmental protection effect of the material are greatly improved, and the material has good application value.)
1. A perovskite light absorption layer material is characterized by comprising CsSnI3Perovskite material, and also contains reinforcing material which is graphene and SnF2The dopant (c).
2. The perovskite light absorption layer material of claim 1, wherein the graphene and SnF are2SnF in the dopant of (2)2And CsSnI3In a molar ratio of 0.1:1 to 0.3: 1.
3. the perovskite light absorption layer material of claim 2, wherein the graphene and SnF are2Of (2)SnF in sundries2And CsSnI3In a molar ratio of 0.2: 1.
4. the perovskite light absorption layer material of claim 1, comprising a two-layer thin film structure, the lower layer thin film structure being doped with SnF2The upper layer film structure of the graphene sheet is CsSnI3A film.
5. A method of producing a perovskite light absorbing layer material according to claim 1, comprising the steps of:
s1: obtaining a graphene sheet, and loading the graphene sheet with SnF by an immersion method2The graphene sheet of (a);
s2: to be doped with SnF2The graphene sheet is taken as a substrate, a secondary substrate loaded with a CsI film is prepared in a vacuum thermal evaporation deposition mode, and then SnI is obtained by re-deposition on the basis of the CsI film2A film-loaded structure;
s3: rapidly annealing at different temperatures ranging from 180 ℃ to 320 ℃ in an annealing furnace under an atmosphere of protective gas, followed by natural cooling to obtain a doped SnF2CsSnI of graphene sheet3A perovskite thin film material.
Technical Field
The invention relates to a perovskite light absorption layer material, in particular to CsSnI3A perovskite material.
Background
In response to the energy crisis, solar cells have been widely and deeply developed in recent years, and have gradually begun to be widely and massively used in some fields of life and industryA solar cell. In the development of solar cell technology, the light absorbing layer material belongs to one of the hot spots of research, and at present, the theoretical basis of the light absorbing layer material of the solar cell is mainly perovskite material, and the molecular formula of the perovskite material is ABX3Structure of type (III), wherein A may be CH3NH3 +B may be Pb2 +And X is a halogen ion. However, such lead element (Pb) -based perovskite materials have strong environmental destructive power although they have stable light absorption properties, and light absorption layer materials replacing lead elements have been sought in the art.
CsSnI has appeared in the prior art3The perovskite material completely avoids the dependence on lead element, has good environmental friendliness and is one of the emerging hot materials in the field. However, this material also has a significant problem that Sn vacancies generate acceptor defects at high concentration to make the material exhibit strong p-type conductivity, so that deep level defect states form recombination centers of electrons and holes, resulting in low conversion efficiency of operation of this material. The research shows that the conversion efficiency of the light absorption layer can be improved after the Sn element is added into the perovskite material. Based on this, when stannous fluoride is added into perovskite material for improvement, the light absorption layer performance is improved, but the improvement amplitude is limited, which is far lower than the battery performance of the traditional lead perovskite light absorption layer material. Therefore, the light absorbing layer material of this material still has room for further improvement.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a perovskite material which is environment-friendly and ensures the performance of a light absorption layer and a method.
The invention provides a perovskite light absorption layer material which comprises CsSnI3Perovskite material, and also contains reinforcing material which is graphene and SnF2The dopant (c).
The beneficial effect of above-mentioned scheme does: by graphene and SnF2Such that CsSnI is added3PerovskiteThe material conversion efficiency is obviously improved and is higher than that of CsSnI alone3Perovskite materials and doped SnF2CsSnI of3A perovskite material; in addition, lead element which has a destructive effect on the environment is not used in the material, so that the safety and the environmental protection effect of the material are greatly improved, and the material has good application value.
In a preferred embodiment, the graphene and SnF2SnF in the dopant of (2)2And CsSnI3In a molar ratio of 0.1:1 to 0.3: 1. by passing through SnF at different contents2The conversion efficiency of the light absorbing layer is tested under the use condition, and the conversion efficiency is obviously improved when the conversion efficiency is more than 0.1:1, and the conversion efficiency is improved when the conversion efficiency is more than 0.3: 1, the conversion efficiency does not vary significantly, and therefore examples within this range are suitable.
In a preferred embodiment, the graphene and SnF2SnF in the dopant of (2)2And CsSnI3In a molar ratio of 0.2: 1. tests show that the conversion efficiency of the light absorption layer reaches an optimal state at the molar ratio.
One preferable scheme is that the film structure comprises two layers of film structures, and the lower layer of film structure is doped SnF2The upper layer film structure of the graphene sheet is CsSnI3A film.
The preparation method of the perovskite light absorption layer material provided by the invention comprises the following steps:
s1: obtaining a graphene sheet, and loading the graphene sheet with SnF by an immersion method2The graphene sheet of (a);
s2: to be doped with SnF2The graphene sheet is taken as a substrate, a secondary substrate loaded with a CsI film is prepared in a vacuum thermal evaporation deposition mode, and then SnI is obtained by re-deposition on the basis of the CsI film2A film-loaded structure;
s3: rapidly annealing at different temperatures ranging from 180 ℃ to 320 ℃ in an annealing furnace under an atmosphere of protective gas, followed by natural cooling to obtain a doped SnF2CsSnI of graphene sheet3A perovskite thin film material.
Detailed Description
The invention provides a perovskite light absorption layer material which comprises CsSnI3Perovskite material, and also contains reinforcing material which is graphene and SnF2The dopant (c).
The invention adopts graphene and SnF2Such that CsSnI is added3The conversion efficiency of the perovskite material is obviously improved and is higher than that of CsSnI alone3Perovskite materials and doped SnF2CsSnI of3A perovskite material; in addition, lead element which has a destructive effect on the environment is not used in the material, so that the safety and the environmental protection effect of the material are greatly improved, and the material has good application value.
The graphene and SnF2SnF in the dopant of (2)2And CsSnI3In a molar ratio of 0.1:1 to 0.3: 1. by passing through SnF at different contents2The conversion efficiency of the light absorbing layer is tested under the use condition, and the conversion efficiency is obviously improved when the conversion efficiency is more than 0.1:1, and the conversion efficiency is improved when the conversion efficiency is more than 0.3: 1, the conversion efficiency does not vary significantly, and therefore examples within this range are suitable. The graphene and SnF2SnF in the dopant of (2)2And CsSnI3In a molar ratio of 0.2: 1. tests show that the conversion efficiency of the light absorption layer reaches an optimal state at the molar ratio.
In specific experimental controls, CsSnI was tested separately3Perovskite materials (CsSnI for short)3Material), doped SnF2CsSnI of3Perovskite materials (SnF for short)2-CsSnI3Material), graphene and SnF2CsSnI of the dopant of (1)3Perovskite material (C-SnF for short)2-CsSnI3Material). See in particular table 1 below.
Table 1: performance testing of electrical conversion efficiency for different material types.
The perovskite light absorption layer material provided by the invention comprises a two-layer film structure, wherein the lower layer film structure is doped with SnF2The upper layer film structure of the graphene sheet is CsSnI3A film.
The preparation method of the perovskite light absorption layer material provided by the invention comprises the following steps:
s1: obtaining a graphene sheet, and loading the graphene sheet with SnF by an immersion method2The graphene sheet of (a); in addition, the SnF can be processed by other existing modes2Doped onto the graphene sheet.
S2: to be doped with SnF2The graphene sheet is taken as a substrate, a secondary substrate loaded with a CsI film is prepared in a vacuum thermal evaporation deposition mode, and then SnI is obtained by re-deposition on the basis of the CsI film2A film-loaded structure;
s3: rapidly annealing at different temperatures ranging from 180 ℃ to 320 ℃ in an annealing furnace under an atmosphere of protective gas, followed by natural cooling to obtain a doped SnF2CsSnI of graphene sheet3A perovskite thin film material. The above preparation method is a preferred embodiment.