Power semiconductor device and method for manufacturing the same

文档序号：325077 发布日期：2021-11-30 浏览：20次中文

阅读说明：本技术 功率半导体器件及其制造方法 (Power semiconductor device and method for manufacturing the same ) 是由河定穆禹赫金信儿金台烨于 2021-05-26 设计创作，主要内容包括：提供了一种功率半导体器件,包括：碳化硅(SiC)的半导体层；在一个方向上延伸的至少一个沟槽；在所述至少一个沟槽的至少内壁上形成的栅极绝缘层；在所述栅极绝缘层上形成的至少一个栅极电极层；在所述至少一个栅极电极层的至少一侧的半导体层中形成的漂移区；在所述半导体层中形成得比所述至少一个栅极电极层深的阱区；在所述阱区中形成的源极区；以及在所述漂移区与所述源极区之间、所述至少一个栅极电极层的一侧的半导体层中形成的至少一个沟道区。根据本申请的功率半导体器件可以提供改善的高耐压特性和改善的操作可靠性。(There is provided a power semiconductor device including: a semiconductor layer of silicon carbide (SiC); at least one groove extending in one direction; a gate insulating layer formed on at least an inner wall of the at least one trench; at least one gate electrode layer formed on the gate insulating layer; a drift region formed in the semiconductor layer on at least one side of the at least one gate electrode layer; a well region formed deeper in the semiconductor layer than the at least one gate electrode layer; a source region formed in the well region; and at least one channel region formed in the semiconductor layer between the drift region and the source region on one side of the at least one gate electrode layer. The power semiconductor device according to the present application can provide improved high withstand voltage characteristics and improved operational reliability.)

1. A power semiconductor device comprising:

a semiconductor layer of silicon carbide (SiC);

at least one trench extending in one direction and recessed into the semiconductor layer from a surface of the semiconductor layer;

a gate insulating layer disposed on at least an inner wall of the at least one trench;

at least one gate electrode layer disposed on the gate insulating layer in the at least one trench;

a drift region disposed in the semiconductor layer on at least one side of the at least one gate electrode layer and having a first conductivity type;

a well region disposed in the semiconductor layer, the well region disposed deeper in the semiconductor layer than the at least one gate electrode layer to contact at least a portion of the drift region and surrounding a bottom surface of the at least one gate electrode layer at least at one end of the at least one gate electrode layer, the well region having a second conductivity type;

a source region disposed in the well region and having the first conductivity type; and

at least one channel region disposed in the semiconductor layer between the drift region and the source region on one side of the at least one gate electrode layer and having the second conductivity type.

2. The power semiconductor device of claim 1, wherein said source region comprises a source contact region connected to a source electrode layer outside of one end of said at least one gate electrode layer.

3. The power semiconductor device of claim 2, further comprising:

a well contact region extending from the well region through the source region and connected to the source electrode layer in the source contact region, the well contact region having the second conductivity type,

wherein the doping concentration of the well contact region is higher than that of the well region.

4. The power semiconductor device of claim 1, wherein said drift region comprises a vertical portion extending vertically in a semiconductor layer on one side of said at least one gate electrode layer,

wherein the at least one channel region is provided in the semiconductor layer between the vertical portion of the drift region and the source region.

5. The power semiconductor device of claim 4 wherein said well region, said source region and said channel region are disposed in said semiconductor layer to be on opposite sides of a vertical portion of said drift region.

6. The power semiconductor device of claim 1, wherein said drift region comprises a vertical portion extending vertically in the semiconductor layer on opposite sides of said at least one gate electrode layer,

wherein the at least one channel region comprises a channel region disposed in the semiconductor layer between the vertical portion of the drift region and the source region.

7. The power semiconductor device of claim 1 wherein said at least one channel region is part of said well region.

8. The power semiconductor device of claim 1, wherein the at least one trench comprises a plurality of trenches disposed in parallel in the semiconductor layer along the one direction,

wherein the at least one gate electrode layer includes a plurality of gate electrode layers disposed in the plurality of trenches,

wherein the well region and the source region extend across the plurality of gate electrode layers, an

Wherein the at least one channel region includes a plurality of channel regions in the semiconductor layer disposed at one side of the plurality of gate electrode layers.

9. The power semiconductor device of claim 8, wherein said source region comprises a source contact region connected to a source electrode layer outside one end of said plurality of gate electrode layers.

10. The power semiconductor device of claim 8, wherein said drift region comprises a vertical portion extending vertically in a semiconductor layer between said plurality of gate electrode layers,

wherein the channel region is disposed in the semiconductor layer between the vertical portion of the drift region and the source region.

11. The power semiconductor device of claim 1, wherein the at least one trench comprises a plurality of trenches arranged to be spaced apart from each other in line along the one direction,

wherein the at least one gate electrode layer includes a plurality of gate electrode layers disposed in the plurality of trenches, an

Wherein the well region and the source region are formed at least in the semiconductor layer between the plurality of trenches.

12. The power semiconductor device of claim 1, further comprising:

a drain region formed in the semiconductor layer below the drift region and having the first conductivity type,

wherein the doping concentration of the drain region is higher than that of the drift region.

13. A power semiconductor device comprising:

a semiconductor layer of silicon carbide (SiC);

a plurality of trenches extending in parallel in one direction and recessed into the semiconductor layer from a surface of the semiconductor layer;

a gate insulating layer disposed on at least an inner wall of the trench;

a plurality of gate electrode layers disposed on the gate insulating layer in the plurality of trenches;

a drift region including a plurality of vertical portions disposed in the semiconductor layer between the plurality of gate electrode layers, the drift region having a first conductivity type;

a well region disposed in the semiconductor layer, the well region disposed deeper in the semiconductor layer than the plurality of gate electrode layers to contact the plurality of vertical portions of the drift region and surrounding bottom surfaces of the plurality of gate electrode layers at opposite ends of the plurality of gate electrode layers, the well region having a second conductivity type;

a source region disposed in the well region and having the first conductivity type; and

a plurality of channel regions in the semiconductor layer disposed between the plurality of vertical portions of the drift region and the source region on opposite sides of the plurality of gate electrode layers, the plurality of channel regions having the second conductivity type.

14. A method of manufacturing a power semiconductor device, comprising:

forming a drift region having a first conductivity type in a semiconductor layer of silicon carbide (SiC);

forming a well region in the semiconductor layer in contact with at least a portion of the drift region and having a second conductivity type;

forming a source region having the first conductivity type in the well region;

forming at least one channel region having the second conductivity type in the semiconductor layer between the drift region and the source region;

forming at least one trench shallower than the well region to recess into the semiconductor layer from a surface of the semiconductor layer, extending in one direction across the drift region;

forming a gate insulating layer on at least an inner wall of the at least one trench; and

forming at least one gate electrode layer on the gate insulating layer in the at least one trench,

wherein the well region is formed deeper in the semiconductor layer than the at least one gate electrode layer to surround a bottom surface of the at least one gate electrode layer at one end of the at least one gate electrode layer; and

wherein the channel region is formed in the semiconductor layer between the drift region and the source region on one side of the at least one gate electrode layer.

15. The method of claim 14, wherein the forming of the source region comprises:

and forming a source contact region connected with the source electrode layer on the outer side of one end of the at least one gate electrode layer.

16. The method of claim 15, further comprising:

forming a well contact region in the source contact region, the well contact region extending from the well region through the source region and connecting with the source electrode layer, the well contact region having the second conductivity type,

wherein the doping concentration of the well contact region is higher than that of the well region.

17. The method of claim 14, wherein the formation of the well region is performed by implanting impurities of the second conductivity type into the semiconductor layer,

wherein the formation of the source region is performed by implanting impurities having the first conductivity type into the well region.

18. The method of claim 14, wherein the drift region is formed on a drain region having the first conductivity type,

wherein the doping concentration of the drain region is higher than that of the drift region.

19. The method of claim 18, wherein the drain region is formed from a substrate of the first conductivity type,

wherein the drift region is formed with an epitaxial layer on the substrate.

Technical Field

The present disclosure relates to a semiconductor device, and more particularly, to a power semiconductor device for switching power transmission and a method of manufacturing the same.

Background

A power semiconductor device is a semiconductor device that operates in a high voltage and high current environment. Power semiconductor devices are used in areas where high power switching is required, such as power conversion, power converters, inverters, and the like. For example, the power semiconductor device may include an Insulated Gate Bipolar Transistor (IGBT), a Metal Oxide Semiconductor Field Effect Transistor (MOSFET), and the like. The power semiconductor device basically requires high withstand voltage characteristics, and nowadays, the power semiconductor device also requires high-speed switching operation.

As described above, power semiconductor devices using silicon carbide (SiC) instead of silicon (Si) are being developed. Silicon carbide (SiC), which is a wide gap semiconductor material having a band gap larger than that of silicon, can maintain stability even at high temperatures, as compared to silicon. In addition, since the breakdown electric field of silicon carbide is higher than that of silicon, silicon carbide can stably operate even at high temperatures. Thus, silicon carbide makes it possible to stably operate at high temperatures by the following characteristics: higher breakdown voltage and excellent heat release than silicon.

In order to increase the channel density of a power semiconductor device using such silicon carbide, a trench type gate structure having a vertical channel structure is being developed. In the trench type gate structure, since an electric field is concentrated at the trench edge, there is a limitation in reducing the channel density by using a structure for protecting the lower portion of the trench. In addition, since the source contact structure is provided between the gate electrodes, it is also difficult to reduce the distance between the gate electrodes. Thus, there is a limit in reducing the channel density.

Reference to the prior art

Patent reference

Patent document 1: korean patent application publication No. 2011-0049249 (2011/5/12/s)

Disclosure of Invention

The present disclosure has been made to solve the above-mentioned problems occurring in the prior art, while fully maintaining the advantages achieved by the prior art.

An aspect of the present disclosure provides a silicon carbide-based power semiconductor device capable of alleviating electric field concentration and increasing channel density, and a method of fabricating the same. However, the above purpose is an example, and the scope of the present invention is not limited thereto.

The technical problem to be solved by the present disclosure is not limited to the above-mentioned problems, and any other technical problems not mentioned herein will be clearly understood by those skilled in the art to which the present disclosure pertains from the following description.

According to an aspect of the present disclosure, a power semiconductor device includes: a semiconductor layer of silicon carbide (SiC); at least one trench extending in one direction and formed to be recessed from a surface of the semiconductor layer into the semiconductor layer to a given depth; a gate insulating layer formed on at least an inner wall of the at least one trench; at least one gate electrode layer formed on the gate insulating layer to bury the at least one trench; a drift region formed in the semiconductor layer on at least one side of the at least one gate electrode layer and having a first conductivity type; a well region formed in the semiconductor layer deeper than the at least one gate electrode layer to contact at least a portion of the drift region and surrounding a bottom surface of the at least one gate electrode layer at least at one end of the at least one gate electrode layer, the well region having a second conductivity type; a source region formed in the well region and having the first conductivity type; and at least one channel region formed in the semiconductor layer between the drift region and the source region on one side of the at least one gate electrode layer and having the second conductivity type, in which an inversion channel is formed in the one direction.

The source region includes a source contact region connected to the source electrode layer at an outer side of one end of the at least one gate electrode layer.

The power semiconductor device may include: a well contact region extending from the well region through the source region and connected to the source electrode layer in the source contact region, the well contact region having the second conductivity type, wherein a doping concentration of the well contact region is higher than a doping concentration of the well region.

The drift region may comprise a vertical portion extending vertically in the semiconductor layer at one side of the at least one gate electrode layer, wherein the at least one channel region is formed in the semiconductor layer between the vertical portion of the drift region and the source region.

The well region, the source region, and the channel region are formed in the semiconductor layer to be located at opposite sides of a vertical portion of the drift region.

The drift region may comprise a vertical portion extending vertically in the semiconductor layer on opposite sides of the at least one gate electrode layer, wherein the at least one channel region comprises a channel region formed in the semiconductor layer between the vertical portion of the drift region and the source region.

The at least one channel region may be part of the well region.

The at least one trench may include a plurality of trenches formed in parallel in the semiconductor layer along the one direction, wherein the at least one gate electrode layer includes a plurality of gate electrode layers formed by burying the plurality of trenches, wherein the well region and the source region extend across the plurality of gate electrode layers, wherein the at least one channel region includes a plurality of channel regions formed in the semiconductor layer at one side of the plurality of gate electrode layers.

The source region may include a source contact region connected to the source electrode layer outside one end of the plurality of gate electrode layers.

The drift region may include a vertical portion extending vertically in the semiconductor layer between the plurality of gate electrode layers, wherein the channel region is formed in the semiconductor layer between the vertical portion of the drift region and the source region.

The at least one trench may include a plurality of trenches arranged to be spaced apart from each other in line along the one direction, wherein the at least one gate electrode layer includes a plurality of gate electrode layers formed by burying the plurality of trenches, wherein the well region and the source region are formed at least in the semiconductor layer between the plurality of trenches.

The power semiconductor device may further include a drain region formed in the semiconductor layer below the drift region and having the first conductivity type, wherein a doping concentration of the drain region is higher than a doping concentration of the drift region.

According to another aspect of the present disclosure, a power semiconductor device includes: a semiconductor layer of silicon carbide (SiC); a plurality of trenches extending in parallel in one direction and formed to be recessed from a surface of the semiconductor layer into the semiconductor layer to a given depth; a gate insulating layer formed on at least an inner wall of the trench; a plurality of gate electrode layers formed on the gate insulating layer to bury the plurality of trenches; a drift region including a plurality of vertical portions formed in the semiconductor layer between the plurality of gate electrode layers; the drift region has a first conductivity type; a well region formed in the semiconductor layer, the well region being formed deeper in the semiconductor layer than the plurality of gate electrode layers to contact the plurality of vertical portions of the drift region and to surround bottom surfaces of the plurality of gate electrode layers at opposite ends of the plurality of gate electrode layers, the well region having a second conductivity type; a source region formed in the well region and having the first conductivity type; and a plurality of channel regions formed in the semiconductor layer between the plurality of vertical portions of the drift region and the source region on opposite sides of the plurality of gate electrode layers, inversion channels being respectively formed in the plurality of channel regions along the one direction, the plurality of channel regions having the second conductivity type.

According to another aspect of the present disclosure, a method of manufacturing a power semiconductor device includes: forming a drift region having a first conductivity type in a semiconductor layer of silicon carbide (SiC); forming a well region in the semiconductor layer in contact with at least a portion of the drift region and having a second conductivity type; forming a source region having the first conductivity type in the well region; forming at least one channel region having a second conductivity type in the semiconductor layer between the drift region and the source region, an inversion channel being formed in the channel region in one direction; forming at least one trench shallower than the well region to recess into the semiconductor layer from a surface of the semiconductor layer to a given depth extending across the drift region in the one direction; forming a gate insulating layer on at least an inner wall of the at least one trench; and forming at least one gate electrode layer on the gate insulating layer to bury the at least one trench, wherein the well region is formed deeper in the semiconductor layer than the at least one gate electrode layer to surround a bottom surface of the at least one gate electrode layer at one end of the at least one gate electrode layer; wherein the channel region is formed in the semiconductor layer between the drift region and the source region on one side of the at least one gate electrode layer.

The forming of the source region may include forming a source contact region connected to the source electrode layer outside one end of the at least one gate electrode layer.

The method may further comprise: forming a well contact region in the source contact region, the well contact region extending from the well region through the source region and connected to the source electrode layer, the well contact region having the second conductivity type, wherein a doping concentration of the well contact region is higher than a doping concentration of the well region.

The formation of the well region may be performed by implanting an impurity of the second conductivity type into the semiconductor layer, wherein the formation of the source region may be performed by implanting an impurity having the first conductivity type into the well region.

The drift region may be formed on a drain region having the first conductivity type, wherein a doping concentration of the drain region is higher than a doping concentration of the drift region.

The drain region may be formed from a substrate of the first conductivity type, wherein the drift region is formed with an epitaxial layer on the substrate.

Drawings

The above and other objects, features and advantages of the present disclosure will become more apparent from the following detailed description when taken in conjunction with the accompanying drawings:

fig. 1 is a schematic perspective view illustrating a power semiconductor device according to an embodiment of the present disclosure;

fig. 2 is a plan view showing the power semiconductor device taken along line II-II of fig. 1;

fig. 3 is a cross-sectional view showing the power semiconductor device taken along line III-III of fig. 1;

fig. 4 is a schematic perspective view illustrating a power semiconductor device according to another embodiment of the present disclosure;

fig. 5 is a sectional view showing the power semiconductor device taken along line V-V of fig. 4;

fig. 6 is a cross-sectional view showing the power semiconductor device taken along line VI-VI of fig. 4;

fig. 7 to 9 are schematic perspective views illustrating a method of manufacturing a power semiconductor device according to an embodiment of the present disclosure;

fig. 10 is a schematic perspective view illustrating a power semiconductor device according to an embodiment of the present disclosure;

fig. 11 is a plan view showing the power semiconductor device taken along line II-II of fig. 10;

fig. 12 is a sectional view showing the power semiconductor device taken along line III-III of fig. 11;

fig. 13 is a perspective view illustrating a power semiconductor device according to another embodiment of the present disclosure;

fig. 14 is a schematic perspective view illustrating a power semiconductor device according to another embodiment of the present disclosure;

fig. 15 is a plan view showing the power semiconductor device taken along line VI-VI of fig. 14;

fig. 16 is a cross-sectional view showing the power semiconductor device taken along line VII-VII of fig. 15;

fig. 17 is a sectional view showing the power semiconductor device taken along line VIII-VIII of fig. 15;

fig. 18 and 19 are cross-sectional views illustrating power semiconductor devices according to other embodiments of the present disclosure;

fig. 20 to 22 are schematic perspective views illustrating a method of manufacturing a power semiconductor device according to an embodiment of the present disclosure;

fig. 23 is a graph illustrating a change in an electric field according to a depth of a power semiconductor device according to an embodiment of the present disclosure;

fig. 24 is a schematic perspective view illustrating a power semiconductor device according to an embodiment of the present disclosure;

fig. 25 is a plan view showing the power semiconductor device taken along line II-II of fig. 24;

fig. 26 is a sectional view showing the power semiconductor device taken along line III-III of fig. 25;

fig. 27 is a sectional view showing the power semiconductor device taken along line IV-IV of fig. 25;

fig. 28 and 29 are sectional views illustrating a power semiconductor device according to another embodiment of the present disclosure;

fig. 30 is a cross-sectional view illustrating a power semiconductor device according to another embodiment of the present disclosure;

fig. 31 is a schematic perspective view illustrating a power semiconductor device according to another embodiment of the present disclosure;

fig. 32 is a plan view showing the power semiconductor device taken along line IX-IX of fig. 31;

fig. 33 is a sectional view showing the power semiconductor device taken along line X-X of fig. 32;

fig. 34 is a cross-sectional view illustrating a power semiconductor device according to another embodiment of the present disclosure;

fig. 35 to 37 are schematic perspective views illustrating a method of manufacturing a power semiconductor device according to an embodiment of the present disclosure;

fig. 38 is a schematic perspective view illustrating a power semiconductor device according to an embodiment of the present disclosure;

fig. 39 is a plan view showing the power semiconductor device taken along line II-II of fig. 38;

fig. 40 is a sectional view showing the power semiconductor device taken along line III-III of fig. 39;

fig. 41 is a sectional view showing the power semiconductor device taken along line IV-IV of fig. 39;

fig. 42 and 43 are sectional views illustrating a power semiconductor device according to another embodiment of the present disclosure;

fig. 44 is a schematic cross-sectional view illustrating a power semiconductor device according to another embodiment of the present disclosure;

fig. 45 to 47 are schematic perspective views illustrating a method of manufacturing a power semiconductor device according to an embodiment of the present disclosure;

fig. 48 is a graph illustrating characteristics of a diode of a power semiconductor device according to an embodiment of the present disclosure;

fig. 49 is a schematic perspective view illustrating a power semiconductor device according to an embodiment of the present disclosure;

fig. 50 is a plan view showing the power semiconductor device taken along line II-II of fig. 49;

fig. 51 is a sectional view showing the power semiconductor device taken along the line III-III of fig. 50;

fig. 52 is a perspective view illustrating a power semiconductor device according to another embodiment of the present disclosure;

fig. 53 is a schematic perspective view illustrating a power semiconductor device according to another embodiment of the present disclosure;

fig. 54 is a plan view showing the power semiconductor device taken along the line VI-VI of fig. 53;

fig. 55 is a sectional view showing the power semiconductor device taken along line VII-VII of fig. 54;

fig. 56 is a sectional view showing the power semiconductor device taken along line VIII-VIII of fig. 54;

fig. 57 and 58 are cross-sectional views illustrating power semiconductor devices according to other embodiments of the present disclosure;

fig. 59 to 61 are schematic perspective views illustrating a method of manufacturing a power semiconductor device according to an embodiment of the present disclosure;

fig. 62 is a schematic perspective view illustrating a power semiconductor device according to an embodiment of the present disclosure;

fig. 63 is a plan view showing the power semiconductor device taken along line II-II of fig. 62;

fig. 64 is a sectional view showing the power semiconductor device taken along line III-III of fig. 63;

fig. 65 is a perspective view showing a power semiconductor device according to another embodiment of the present disclosure;

fig. 66 is a schematic perspective view illustrating a power semiconductor device according to another embodiment of the present disclosure;

fig. 67 is a plan view showing the power semiconductor device taken along the line VI-VI of fig. 66;

fig. 68 is a sectional view showing the power semiconductor device taken along line VII-VII of fig. 67;

fig. 69 is a sectional view showing the power semiconductor device taken along line VIII-VIII of fig. 67;

fig. 70 and 71 are cross-sectional views illustrating power semiconductor devices according to other embodiments of the present disclosure;

fig. 72 to 74 are schematic perspective views illustrating a method of manufacturing a power semiconductor device according to an embodiment of the present disclosure;

fig. 75 is a schematic perspective view illustrating a power semiconductor device according to an embodiment of the present disclosure;

fig. 76 is a plan view showing the power semiconductor device taken along line II-II of fig. 75;

fig. 77 is a sectional view showing the power semiconductor device taken along the line III-III of fig. 76;

fig. 78 is a sectional view showing the power semiconductor device taken along line IV-IV of fig. 76;

fig. 79 is a schematic perspective view showing a power semiconductor device according to another embodiment of the present disclosure;

fig. 80 is a plan view showing the power semiconductor device taken along line VI-VI of fig. 79;

fig. 81 is a sectional view showing the power semiconductor device taken along line VII-VII of fig. 80;

fig. 82 is a sectional view showing the power semiconductor device taken along line VIII-VIII of fig. 80;

fig. 83 to 86 are sectional views showing power semiconductor devices according to other embodiments of the present disclosure;

fig. 87 to 89 are schematic perspective views illustrating a method of manufacturing a power semiconductor device according to an embodiment of the present disclosure;

fig. 90 is a schematic perspective view illustrating a power semiconductor device according to an embodiment of the present disclosure;

fig. 91 is a plan view showing the power semiconductor device taken along line II-II of fig. 90;

fig. 92 is a sectional view showing a power semiconductor device taken along line III-III of fig. 91;

fig. 93 is a perspective view showing a power semiconductor device according to another embodiment of the present disclosure;

fig. 94 is a schematic perspective view illustrating a power semiconductor device according to another embodiment of the present disclosure;

fig. 95 is a plan view showing the power semiconductor device taken along line VI-VI of fig. 94;

fig. 96 is a sectional view showing the power semiconductor device taken along line VII-VII of fig. 95;

fig. 97 is a sectional view showing a power semiconductor device taken along line VIII-VIII of fig. 95;

fig. 98 is a cross-sectional view illustrating a power semiconductor device according to another embodiment of the present disclosure; and

fig. 99 is a perspective view illustrating a power semiconductor device according to another embodiment of the present disclosure.

Detailed Description

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings. However, the present disclosure may be embodied in various different forms and should not be construed as being limited to the embodiments disclosed below. Rather, these embodiments are provided as examples so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In addition, the dimensions of at least some of the elements or components shown in the figures may be exaggerated or minimized for ease of description. In the drawings, like numbering represents like elements.

Unless otherwise defined, all terms used herein should be construed as commonly understood by one of ordinary skill in the art. In the drawings, the sizes of layers and regions are exaggerated for descriptive purposes, and thus are provided to describe the normal structure of the present disclosure.

Like reference numerals refer to like components. When a first component, such as a layer, region or substrate, is described as being on a second component, it can be understood that the first component is directly on the second component or that a third component is interposed therebetween. On the other hand, when a first component is described as being "directly on" a second component, it is to be understood that no intermediate component is interposed therebetween.

Fig. 1 is a schematic perspective view illustrating a power semiconductor device according to an embodiment of the present disclosure. Fig. 2 is a plan view showing the power semiconductor device taken along line II-II of fig. 1. Fig. 3 is a sectional view showing the power semiconductor device taken along line III-III of fig. 1.

Referring to fig. 1 to 3, the power semiconductor device 100-1 may include at least a semiconductor layer 105, a gate insulating layer 118, and a gate electrode layer 120. For example, the power semiconductor device 100-1 may have a power MOSFET structure.

The semiconductor layer 105 may refer to a semiconductor material layer or a plurality of semiconductor material layers, and for example, may refer to an epitaxial layer or a plurality of epitaxial layers. In addition, the semiconductor layer 105 may refer to one or more epitaxial layers on a semiconductor substrate.

For example, the semiconductor layer 105 may be formed of silicon carbide (SiC). In more detail, the semiconductor layer 105 may include at least one silicon carbide epitaxial layer.

Silicon carbide (SiC) may have a wider band gap than silicon and thus may maintain stability even at high temperatures compared to silicon. In addition, since the breakdown electric field of silicon carbide is higher than that of silicon, silicon carbide can stably operate even at high temperatures. Therefore, the power semiconductor device 100-1 including the semiconductor layer 105 formed of silicon carbide may have a high breakdown voltage, and may provide excellent heat release characteristics and stable operation characteristics at high temperatures, as compared to the case of using silicon.

In more detail, the semiconductor layer 105 may include a drift region 107. The drift region 107 may have the first conductive type, and may be formed by implanting impurities of the first conductive type into a portion of the semiconductor layer 105. For example, the drift region 107 may be formed by doping an epitaxial layer of silicon carbide with impurities of the first conductivity type.

Well region 110 may be formed in semiconductor layer 105 to contact at least a portion of drift region 107 and may have a second conductivity type. For example, the well region 110 may be formed by doping impurities of a second conductivity type opposite to the first conductivity type in the drift region 107.

For example, well region 110 may be formed to surround at least a portion of drift region 107. As such, drift region 107 may include vertical portion 107a, at least a portion of vertical portion 107a being surrounded by well region 110. In operation of power semiconductor device 100-1, vertical portion 107a may provide a vertical movement path for charge.

The well region 110 is illustrated in fig. 1 as including two regions spaced apart from each other and a vertical portion 107a interposed therebetween, but the well region 110 may be variously changed or modified. For example, the vertical portion 107a may have a shape whose side is surrounded by the well region 110 at a time.

The source region 112 may be formed in the well region 110 and may have the first conductivity type. For example, the source region 112 may be formed by doping impurities of the first conductive type in the well region 110. The concentration of the first conductive type impurity doped in the source region 112 may be higher than that doped in the drift region 107.

At least one channel region 110a may be formed in the semiconductor layer 105 between the drift region 107 and the source region 112. For example, the channel region 110a may have the second conductive type such that an inversion channel is formed along one direction.

Because the channel region 110a has an opposite doping type from the source region 112 and the drift region 107, the channel region 110a may form a diode junction with the source region 112 and the drift region 107. Therefore, the channel region 110a may not allow charge movement under normal conditions; however, when an operating voltage is applied to the gate electrode layer 120, an inversion channel may be formed therein, thereby allowing charge movement.

In some embodiments, the channel region 110a may be a portion of the well region 110. In this case, the channel region 110a may be formed to be continuously connected with the well region 110. The doping concentration of the second conductive type impurity of the channel region 110a may be the same as that of the rest of the well region 110 or may be different for adjustment of the threshold voltage.

In some embodiments, the well region 110, the channel region 110a, and the source region 112 may be formed to be symmetrical with respect to the vertical portion 107a of the drift region 107. For example, each of the well region 110, the channel region 110a, and the source region 112 may include left and right portions formed to be symmetrical with respect to the vertical portion 107a of the drift region 107. In each of the well region 110, the channel region 110a, and the source region 112, the left and right portions may be separated from each other or may be connected to each other.

In addition, the drain region 102 may be formed in the semiconductor layer 105 under the drift region 107, and may have the first conductive type. For example, the drain region 102 may be doped with impurities at a high concentration as compared to the drift region 107.

In some embodiments, drain region 102 may be implemented with a silicon carbide substrate having a first conductivity type. In this case, the drain region 102 may be understood as a part of the semiconductor layer 105 or may be understood as a substrate independent of the semiconductor layer 105.

At least one trench 116 may be formed to be recessed from the surface of the semiconductor layer 105 into the semiconductor layer 105 to a given depth. The trench 116 may extend in one direction within the semiconductor layer 105. One direction may refer to the length direction of the trench 116, not the depth direction, and may refer to the direction of the line II-II or III-III of fig. 1.

A gate insulating layer 118 may be formed on at least an inner wall of the trench 116. For example, the gate insulating layer 118 may include an insulating material such as silicon oxide, silicon carbide, silicon nitride, hafnium oxide, zirconium oxide, or aluminum oxide, or may include a stacked structure thereof. The thickness of the gate insulating layer 118 may be uniform, or a portion of the gate insulating layer 118 formed on the bottom surface of the trench 116 may be thicker than a portion of the gate insulating layer 118 formed on the sidewall of the trench 116.

At least one gate electrode layer 120 may be formed on the gate insulating layer 118 to bury the trench 116. For example, the gate electrode layer 120 may include an appropriate conductive material such as polysilicon, metal nitride, or metal silicide, or may include a stacked structure thereof.

Well region 110 may be formed deeper than gate electrode layer 120 so as to surround the bottom surface of gate electrode layer 120 at one end of gate electrode layer 120. In addition, well region 110 may be formed deeper than gate electrode layer 120 so as to surround the bottom surface of gate electrode layer 120 at the opposite end of gate electrode layer 120. In this way, the opposite end portions of the gate electrode layer 120 around the source region 112 may be surrounded by the well region 110.

This structure can alleviate concentration of an electric field on the bottom surface of the trench 116, i.e., at the lower portion of the gate electrode layer 120. Therefore, in the power semiconductor device 100-1 according to the embodiment, the well region 110 may be formed deeper than the gate electrode layer 120 without additionally forming a deep well, and thus the electric field concentration on the bottom surface of the trench 116 may be mitigated. The conventional vertical channel structure has a problem in that junction resistance and threshold voltage increase as the distance between the deep well and the trench becomes shorter. However, this problem may not occur in the power semiconductor device 100-1 according to the embodiment.

The channel region 110a may be formed in the semiconductor layer 105 between the vertical portion 107a of the drift region 107 and the source region 112, on one side of the gate electrode layer 120. Accordingly, the semiconductor layer 105 of one side of the gate electrode layer 120 may include a structure in which the source region 112, the channel region 110a, and the vertical portion 107a of the drift region 107 are connected in one direction.

The above-described structure of the channel region 110a may be referred to as a "lateral channel structure" because the channel region 110a is formed along a sidewall of the gate electrode layer 120.

In addition, a channel region 110a may be formed in the semiconductor layer 105 between the vertical portion 107a of the drift region 107 and the source region 112 on the opposite side of the gate electrode layer 120.

In some embodiments, the gate insulating layer 118 and the gate electrode layer 120 may be formed in the trench 116, and furthermore, may be formed to further extend to the outside of the trench 116.

In some embodiments, a single trench 116 or a plurality of trenches 116 may be provided in the semiconductor layer 105. The number of the grooves 116 may be appropriately selected without limiting the scope of the embodiments.

For example, a plurality of trenches 116 may be formed in parallel in one direction in the semiconductor layer 105. When the grooves 116 extend in one direction and are spaced apart from each other in a direction perpendicular to the one direction, the grooves 116 may be arranged in parallel.

In this case, a plurality of gate electrode layers 120 may be formed on the gate insulating layer 118 to fill the inside of the trench 116. In this way, the gate electrode layer 120 of a trench type may be formed in the semiconductor layer 105, and may be arranged to extend in parallel in the one direction like the trench 116.

Further, each of the well region 110 and the source region 112 may extend across the gate electrode layer 120. The vertical portion 107a of the drift region 107 may be arranged in the semiconductor layer 105 between the gate electrode layers 120. A plurality of channel regions 110a may be formed in the semiconductor layer 105 between the source region 112 and the vertical portion 107a of the drift region 107 on one side or the opposite side of each gate electrode layer 120.

In some embodiments, well region 110 may be formed deeper in semiconductor layer 105 than gate electrode layer 120, contacting vertical portion 107a of drift region 107 and surrounding a bottom surface of gate electrode layer 120 at an opposite end of gate electrode layer 120.

An interlayer insulating layer 130 may be formed on the gate electrode layer 120.

The source electrode layer 140 may be formed on the interlayer insulating layer 130 and may be connected to the source region 112. For example, the source electrode layer 140 may be formed of an appropriate conductive material, metal, or the like.

For the sake of clarity, the interlayer insulating layer 130 and the source electrode layer 140 are not shown in fig. 1, unlike fig. 2 and 3.

In the power semiconductor device 100-1 described above, the first conductivity type and the second conductivity type may be opposite to each other, and each of the first conductivity type and the second conductivity type may be one of an n-type and a p-type. For example, when the first conductivity type is n-type, the second conductivity type is p-type, and vice versa.

In more detail, when the power semiconductor device 100-1 is an N-type MOSFET, the drift region 107 may be an N-region, the source region 112, the source contact region 112a, and the drain region 102 may be N + regions, the well region 110 and the channel region 110a may be P-regions, and the well contact region 114 may be a P + region.

In operation of the power semiconductor device 100-1, current may generally flow in a vertical direction from the drain region 102 along the vertical portion 107a of the drift region 107 and may then flow through the channel region 110a along the side surface of the gate electrode layer 120 to the source region 112.

In the above-described power semiconductor device 100-1, the gate electrode layers 120 may be densely arranged in parallel in a stripe shape, and the channel regions 110a may be arranged on the side surfaces of the gate electrode layers 120. Thus, the channel density may increase.

In addition, in the power semiconductor device 100-1, since the bottom surface of the gate electrode layer 120 is surrounded by the well region 110, a breakdown phenomenon due to concentration of an electric field on the edge of the trench 116 may be mitigated. Therefore, the high withstand voltage characteristic of the power semiconductor device 100-1 can be improved. This may mean that the reliability of the operation of the power semiconductor device 100-1 is improved.

Fig. 4 is a schematic perspective view illustrating a power semiconductor device 100a-1 according to another embodiment of the present disclosure. Fig. 5 is a sectional view showing the power semiconductor device 100a-1 taken along the line V-V of fig. 4. Fig. 6 is a cross-sectional view illustrating the power semiconductor device 100a-1 taken along line VI-VI of fig. 4.

The power semiconductor device 100a-1 according to this embodiment may be implemented by using or partially modifying the power semiconductor device 100-1 in fig. 1 to 3. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 4 to 6, the source region 112 may include a source contact region 112a connected to the source electrode layer 140 at an outer side of at least one end of the gate electrode layer 120. For example, the source contact region 112a, which is a portion of the source region 112, may refer to a portion connected to the source electrode layer 140.

The well contact region 114 may be formed in the source contact region 112 a. For example, the well contact region 114 may extend from the well region 110 to penetrate the source region 112, and may have the second conductivity type. One well contact region 114 or a plurality of well contact regions 114 may be formed in the source contact region 112 a.

For example, the well contact region 114 may be connected to the source electrode layer 140 and may be doped with a second conductive type impurity at a higher concentration than the well region 110 to reduce contact resistance when connected to the source electrode layer 140.

In fig. 4 to 6, examples are shown in which a source contact region 112a and a well contact region 114 are formed in the source region 112 on one side of the vertical portion 107a of the drift region 107. However, when each of the source region 112 and the well region 110 is divided into a plurality of regions, each of the source contact region 112a and the well contact region 114 may be formed in each corresponding region.

In some embodiments, the plurality of grooves 116 may be arranged to be linearly spaced apart from each other along one direction. As such, the gate electrode layers 120 may also be arranged to be linearly spaced apart from each other in one direction along the trench 116. In this case, the well region 110 and the source region 112 may be formed in the semiconductor layer 105 such that the well region 110 and the source region 112 are located between a plurality of trenches 116 linearly spaced apart from each other along one direction.

For example, the structure of the power semiconductor device 100-1 shown in fig. 1 to 3 may be arranged in plural along one direction, and the well region 110 and the source region 112 may be formed therebetween.

For the sake of clarity, the interlayer insulating layer 130 and the source electrode layer 140 are not shown in fig. 4, unlike fig. 5 and 6.

In the power semiconductor device 100a-1 according to the embodiment, the source contact region 112a and the well contact region 114 may be disposed outside the gate electrode layer 120, not between the gate electrode layer 120, and thus, the gate electrode layer 120 may be more densely arranged. Thus, the channel density of the power semiconductor device 100a-1 can be significantly increased. In addition, according to the power semiconductor device 100a-1, the breakdown phenomenon due to the concentration of the electric field on the edge of the trench 116 can be mitigated, and therefore, the high withstand voltage characteristic of the power semiconductor device 100a-1 can be improved. This may mean that the reliability of the operation of the power semiconductor device 100a-1 is improved.

Fig. 7 to 9 are schematic perspective views illustrating a method of manufacturing the power semiconductor device 100a-1 according to an embodiment of the present disclosure.

Referring to fig. 7, a drift region 107 having a first conductive type may be formed in a semiconductor layer 105 of silicon carbide (SiC). For example, the drift region 107 may be formed on the drain region 102 having the first conductivity type. In some embodiments, drain region 102 may be implemented with a substrate having a first conductivity type, and drift region 107 may be formed in one or more epitaxial layers on the substrate.

Next, a well region 110 having a second conductivity type may be formed in the semiconductor layer 105 so as to be in contact with at least a portion of the drift region 107. For example, the formation of the well region 110 may be performed by implanting impurities of the second conductive type into the semiconductor layer 105.

For example, well region 110 may be formed in semiconductor layer 105 such that drift region 107 includes vertical portion 107a, at least a portion of vertical portion 107a being surrounded by well region 110. In more detail, the well region 110 may be formed by doping impurities having a conductivity type opposite to that of the drift region 107 in the drift region 107.

In addition to forming the source region 112, at least one channel region 110a having the second conductivity type, in which an inversion channel is formed in one direction, may be formed in the semiconductor layer 105 between the source region 112 and the drift region 107. For example, the channel region 110a may be formed between the source region 112 and the vertical portion 107a of the drift region 107.

In the above-described manufacturing method, impurity implantation or impurity doping may be performed so that the impurities are mixed or form an epitaxial layer when the impurities are implanted into the semiconductor layer 105. However, an ion implantation method using a mask pattern may be used to implant impurities in the selected region.

Alternatively, a heat treatment process for activating or diffusing impurities may be performed after the ion implantation.

Referring to fig. 8, at least one trench 116 may be formed to be recessed from a surface of the semiconductor layer 105 into the semiconductor layer 105 to a given depth.

For example, the trench 116 may extend across the drift region 107 in one direction and may be formed shallower than the well region 110.

In addition, a plurality of trenches 116 may be formed in parallel in one direction in the semiconductor layer 105.

For example, the trench 116 may be formed by forming a photomask using photolithography, and then etching the semiconductor layer 105 by using the photomask as an etching protective layer.

Referring to fig. 9, a gate insulating layer 118 may be formed on an inner wall of the trench 116. For example, the gate insulating layer 118 may be formed by oxidizing the semiconductor layer 105 to form an oxide or by depositing an insulating material such as an oxide or a nitride on the semiconductor layer 105.

Next, a gate electrode layer 120 may be formed on the gate insulating layer 118 to bury the trench 116. For example, the gate electrode layer 120 may be formed by forming a conductive layer on the gate insulating layer 118 and patterning the conductive layer. The gate electrode layer 120 may be formed by doping impurities in polysilicon, or may be formed to include a conductive metal or a metal silicide.

The patterning process may be performed by using photolithography and etching processes. The photolithography process may include a process of forming a photoresist pattern as a mask layer by using a photolithography process and a development process, and the etching process may include a process of selectively etching the underlying structure by using the photoresist pattern.

In addition, referring to fig. 2 and 3, an interlayer insulating layer 130 may be formed on the gate electrode layer 120.

Next, a source electrode layer 140 may be formed on the interlayer insulating layer 130. For example, the source electrode layer 140 may be formed by forming a conductive layer (e.g., a metal layer) on the interlayer insulating layer 130 and patterning the conductive layer.

Meanwhile, the power semiconductor device 100a-1 in fig. 4 to 6 may be manufactured by adding some processes to the manufacturing method of the above-described power semiconductor device 100-1 or changing or modifying the manufacturing method.

For example, when manufacturing the power semiconductor device 100a-1, the forming of the source region 112 may include forming a source contact region 112a connected to the source electrode layer 140 outside at least one end of the gate electrode layer 120. In some embodiments, the source contact region 112a may not be distinguished from the source region 112.

In addition, the well contact region 114 may be formed in the source contact region 112a before the trench 116 is formed. For example, the well contact region 114 may be formed by implanting impurities of the second conductivity type having a higher concentration than the well region 110 into a portion of the well region 110.

When manufacturing the power semiconductor device 100a-1, the trenches 116 may be arranged to be linearly spaced apart from each other in one direction. In addition, the well region 110, the channel region 110a, and the source region 112 may be formed in the semiconductor layer between the trenches 116.

According to the manufacturing method described above, the power semiconductor device 100-1 using the semiconductor layer 105 of silicon carbide can be economically manufactured by using a process applied to a conventional silicon substrate.

Fig. 10 is a schematic perspective view illustrating a power semiconductor device 100-2 according to an embodiment of the present disclosure. Fig. 11 is a plan view showing the power semiconductor device 100-2 taken along line II-II of fig. 10. Fig. 12 is a sectional view showing the power semiconductor device 100-2 taken along line III-III of fig. 11.

Referring to fig. 10 to 12, the power semiconductor device 100-2 may include at least a semiconductor layer 105, a gate insulating layer 118, and a gate electrode layer 120. For example, the power semiconductor device 100-2 may have a power MOSFET structure.

For example, the semiconductor layer 105 may be formed of silicon carbide (SiC). In more detail, the semiconductor layer 105 may include at least one epitaxial layer of silicon carbide.

Silicon carbide (SiC) can have a wider band gap than silicon and thus maintain stability even at high temperatures compared to silicon. In addition, since the breakdown electric field of silicon carbide is higher than that of silicon, silicon carbide can stably operate even at high temperatures. Therefore, the power semiconductor device 100-2 including the semiconductor layer 105 formed of silicon carbide may have a high breakdown voltage, and may provide excellent heat release characteristics and stable operation characteristics at high temperatures, as compared to the case of using silicon.

The well region 110 may be formed in the semiconductor layer 105 to contact the drift region 107 and may have the second conductive type. For example, the well region 110 may be formed by doping impurities of a second conductivity type opposite to the first conductivity type in the drift region 107.

For example, well region 110 may be formed to surround at least a portion of drift region 107. As such, drift region 107 may include vertical portion 107a, at least a portion of vertical portion 107a being surrounded by well region 110. In operation of power semiconductor device 100-2, vertical portion 107a may provide a vertical movement path for charge.

The well region 110 is shown in fig. 10 as including two regions spaced apart from each other and the vertical portion 107a interposed therebetween, but the well region 110 may be variously changed or modified. For example, the vertical portion 107a may have a shape whose side is surrounded by the well region 110 at a time.

The pillar regions 111 may be formed in the semiconductor layer 105 under the well region 110 to contact the drift region 107. In this way, a super junction with the drift region 107 can be formed. For example, the pillar regions 111 may be disposed under the well region 110 to contact the well region 110, and opposite side surfaces of the pillar regions 111 may be disposed to contact the drift region 107.

The column regions 111 may have a conductivity type different from that of the drift region 107, and may be formed in the semiconductor layer 105 so as to form a super junction with the drift region 107. For example, the pillar regions 111 may have a second conductivity type opposite to the conductivity type of the drift region 107 and the same conductivity type as the well region 110. For example, the doping concentration of the second conductive type impurity of the pillar region 111 may be the same as or lower than that of the well region 110.

In some embodiments, the pillar regions 111 may be formed to have a width narrower than that of the well region 110 based on one direction. One direction may refer to the direction of line III-III of fig. 11. In addition, opposite ends of the pillar regions 111 may be arranged to be inwardly offset from opposite ends of the well region 110 based on one direction.

As such, under the well region 110, the pillar regions 111 may be formed to recede inward from opposite ends of the well region 110 in a state of contact with the well region 110. For example, the pillar regions 111 are formed in two regions spaced apart from each other like the well regions 110, and a spacing distance between the two pillar regions 111 may be greater than a spacing distance between the two well regions 110.

In some embodiments, the sides and lower surface of the pillar region 111 may be in contact with the drift region 107. For example, the plurality of pillar regions 111 and the plurality of drift regions 107 may be alternately arranged such that the side surfaces of the pillar regions 111 and the side surfaces of the drift regions 107 contact each other, and thus, a super junction structure may be formed. In addition, a plurality of pillar regions 111 and a plurality of drift regions 107 may be alternately disposed under one well region 110.

The channel region 110a may be formed in the semiconductor layer 105 between the drift region 107 and the source region 112. For example, the channel region 110a may have the second conductive type, and an inversion channel may be formed in the channel region 110a along one direction in the operation of the power semiconductor device 100-2.

Because the channel region 110a has a doping type opposite to the doping type of the source region 112 and the drift region 107, the channel region 110a may form a diode junction with the source region 112 and the drift region 107. Therefore, the channel region 110a may not allow charge movement under normal conditions; however, when an operating voltage is applied to the gate electrode layer 120, an inversion channel may be formed therein, thereby allowing charge movement.

In some embodiments, the channel region 110a may be a portion of the well region 110. In this case, the channel region 110a may be entirely formed to be continuously connected with the well region 110. The doping concentration of the second conductive type impurity of the channel region 110a may be the same as or different from that of the rest of the well region 110 to adjust the threshold voltage.

In some embodiments, the well region 110, the pillar region 111, the channel region 110a, and the source region 112 may be formed to be symmetrical with respect to the vertical portion 107a of the drift region 107. For example, the well region 110, the pillar region 111, the channel region 110a, and the source region 112 may be formed at opposite ends of the vertical portion 107a of the drift region 107, or each of the well region 110, the pillar region 111, the channel region 110a, and the source region 112 may include a first portion and a second portion formed to be symmetrical with respect to the vertical portion 107a of the drift region 107. In each of the well region 110, the pillar region 111, the channel region 110a, and the source region 112, the first portion and the second portion may be separated from each other or may be connected to each other.

At least one trench 116 recessed from the surface of the semiconductor layer 105 to a given depth in the semiconductor layer 105 may be formed. The trench 116 may extend in one direction within the semiconductor layer 105. One direction may refer to a length direction of the groove 116, not a depth direction, and may refer to a direction of a line III-III of fig. 11.

A gate insulating layer 118 may be formed at least on an inner wall of the trench 116. For example, the gate insulating layer 118 may be formed on the inner surface of the trench 116 and on the semiconductor layer 105 outside the trench 116. The thickness of the gate insulating layer 118 may be uniform, or a portion of the gate insulating layer 118 formed on the bottom surface of the trench 116 may be thicker than a portion of the gate insulating layer 118 formed on the sidewall of the trench 116, so that the electric field is reduced at the bottom of the trench 116.

For example, the gate insulating layer 118 may include an insulating material such as silicon oxide, silicon carbide, silicon nitride, hafnium oxide, zirconium oxide, or aluminum oxide, or may include a stacked structure thereof.

The drift region 107 may be formed in the semiconductor layer 105 on one side of the gate electrode layer 120. For example, the vertical portion 107a of the drift region 107 may extend vertically in the semiconductor layer 105 on one side of the gate electrode layer 120. A channel region 110a may be formed in the semiconductor layer 105 at one side of the gate electrode layer 120 between the vertical portion 107a of the drift region 107 and the source region 112. Accordingly, the semiconductor layer 105 of one side of the gate electrode layer 120 may include a structure in which the source region 112, the channel region 110a, and the vertical portion 107a of the drift region 107 are connected in one direction.

In some embodiments, drift regions 107 may be formed in semiconductor layer 105 on opposite sides of gate electrode layer 120. For example, drift region 107 may include vertical portions 107a that extend vertically in semiconductor layer 105 on opposite sides of gate electrode layer 120. The channel region 110a may be formed in the semiconductor layer 105 between the vertical portion 107a of the drift region 107 and the source region 112, on opposite sides of the gate electrode layer 120.

Well region 110 may be formed deeper than gate electrode layer 120 so as to surround the bottom surface of gate electrode layer 120 at one end portion of gate electrode layer 120. In addition, well region 110 may be formed deeper than gate electrode layer 120 to surround the bottom surface of gate electrode layer 120 at opposite ends of gate electrode layer 120. In this way, the opposite end portions of the gate electrode layer 120 around the source region 112 may be surrounded by the well region 110.

In some embodiments, the gate insulating layer 118 and the gate electrode layer 120 may be formed in the trench 116, and furthermore, may be formed to further extend to the outside of the trench 116.

In this case, a plurality of gate electrode layers 120 may be formed on the gate insulating layer 118 to fill the inside of the trench 116. In this way, the gate electrode layer 120 may be formed in a trench type in the semiconductor layer 105, and may be arranged to extend in parallel in one direction like the trench 116.

In addition, each of the well region 110 and the source region 112 may extend across the gate electrode layer 120. The vertical portion 107a of the drift region 107 may be arranged in the semiconductor layer 105 between the gate electrode layers 120. The channel region 110a may be formed in the semiconductor layer 105 between the source region 112 and the vertical portion 107a of the drift region 107 on one side or the opposite side of each gate electrode layer 120.

An interlayer insulating layer 130 may be formed on the gate electrode layer 120. For example, the interlayer insulating layer 130 may include a suitable insulating material such as an oxide or a nitride, or may include a stacked structure thereof.

In the power semiconductor device 100-2 described above, the first conductivity type and the second conductivity type may be opposite to each other, and each of the first conductivity type and the second conductivity type may be one of an n-type and a p-type. For example, when the first conductivity type is n-type, the second conductivity type is p-type, and vice versa.

In more detail, when the power semiconductor device 100-2 is an N-type MOSFET, the drift region 107 may be an N-region, the source region 112 and the drain region 102 may be N + regions, and the well region 110, the pillar region 111, and the channel region 110a may be P-regions.

In operation of the power semiconductor device 100-2, current may generally flow in a vertical direction from the drain region 102 along the vertical portion 107a of the drift region 107 and may then flow through the channel region 110a along the side surface of the gate electrode layer 120 to the source region 112.

In the above-described power semiconductor device 100-2, the gate electrode layers 120 in the trenches 116 may be densely arranged in parallel in a stripe type or a line type, and the channel regions 110a may be disposed on the side surfaces of the gate electrode layers 120. In this way, the channel density can be increased.

In addition, in the above-described power semiconductor device 100-2, the well (110) structure may alleviate concentration of an electric field at the bottom surface of the trench 116, i.e., at the lower portion of the gate electrode layer 120. As such, the margin (margin) of the electric field covering the gate insulating layer 118 of the power semiconductor device 100-2 may be increased, and thus, the reliability of the operation of the power semiconductor device 100-2 may be improved. In addition, the junction resistance of the vertical portion 107a of the drift region 107 can be reduced by reducing the electric field of the bottom surface of the trench 116 and reducing the electric field of the cover gate insulating layer 118.

Meanwhile, since the power semiconductor device 100-2 is used for a high power switch, the power semiconductor device 100-2 requires a high withstand voltage characteristic. When a high voltage is applied to the drain region 102, a depletion region may expand from the semiconductor layer 105 adjacent to the drain region 102, so that a voltage barrier of a channel is lowered. This phenomenon is called "Drain Induced Barrier Lowering (DIBL)".

DIBL may cause abnormal conduction of the channel region 110a and, in addition, may cause a punch-through phenomenon, i.e., reaching the source side from the depletion region of the drain side as it expands.

However, the above-described power semiconductor device 100-2 can secure appropriate high withstand voltage characteristics by suppressing abnormal current and punch-through due to DIBL by using the column region 111 forming a super junction with the drift region 107.

The high withstand voltage characteristics can be further improved by adjusting the charge amount of the column region 111 and the charge amount of the drift region 107.

Fig. 23 is a graph showing a change in electric field according to the depth of the power semiconductor device 100-2.

Referring to fig. 23, when the charge amount Qp of the pillar region 111 is greater than the charge amount Qn of the drift region 107, the breakdown voltage may be increased by allowing a maximum electric field to be formed in the drift region 107 on the same line as the bottom surface of the pillar region 111 in the operation of the power semiconductor device 100-2. The slope of the electric field intensity between the position a and the position B in fig. 23 can be controlled by adjusting the charge amount Qp of the column region 111.

For example, by making the doping concentration of the second conductivity type impurity of the column region 111 higher than the doping concentration of the first conductivity type impurity of the drift region 107, the charge amount Qp of the column region 111 can be made larger than the charge amount Qn of the drift region 107. Therefore, the high withstand voltage characteristic of the power semiconductor device 100-2 can be improved.

Fig. 13 is a perspective view illustrating a power semiconductor device 100a-2 according to another embodiment of the present disclosure.

The power semiconductor device 100a-2 according to the embodiment may be implemented by using or partially modifying the power semiconductor device 100-2 in fig. 10 to 12. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 13, in the power semiconductor device 100a-2, a channel region 107b may be formed in the semiconductor layer 105 between the drift region 107 and the source region 112. For example, the channel region 107b may have the first conductivity type, and in operation of the power semiconductor device 100a-2, an accumulation channel may be formed in the channel region 107 b.

For example, the channel region 107b may be formed in the semiconductor layer 105 between the source region 112 and the vertical portion 107a of the drift region 107. The channel region 107b may have the same doping type as the source region 112 and the drift region 107.

In this case, the source region 112, the channel region 107b, and the drift region 107 may be normally electrically connected. However, in the structure of the semiconductor layer 105 of silicon carbide, a potential barrier is formed while the energy band of the channel region 107b is bent upward due to the influence of negative charges generated by forming carbon clusters in the gate insulating layer 118. In this manner, an accumulation channel that allows electric charges or current to flow in the channel region 107b only when an operating voltage is applied to the gate electrode layer 120 can be formed.

Therefore, the threshold voltage applied to the gate electrode layer 120 to form the accumulation channel in the channel region 107b can be much lower than the threshold voltage applied to the gate electrode layer 120 to form the inversion channel of the channel region 110a in fig. 10 to 12.

In some embodiments, the channel region 107b may be a portion of the drift region 107. In more detail, the channel region 107b may be a portion of the vertical portion 107a of the drift region 107. For example, the channel region 107b may be integrally formed with the drift region 107. In this case, the drift region 107 may be connected with the source region 112 through the channel region 107 b. That is, in the channel region (107b) portion, the drift region 107 and the source region 112 may contact each other.

The doping concentration of the first conductive type impurity of the channel region 107b may be the same as that of the remaining portion of the drift region 107 or may be different to adjust the threshold voltage.

As a modified example of the embodiment, the well region 110 may be formed to protrude farther toward the vertical portion 107a of the drift region 107 than a portion of the source region 112, and the channel region 107b may be formed in the semiconductor layer 105 on the protruding portion of the well region 110.

In addition, the well region 110 may further include a tap (tap) portion extending toward the gate electrode layer 120 at an end of the protruding portion. The channel region 107b may be formed in a curved shape on the protruding portion and the tap portion of the well region 110.

In addition, the vertical portion 107a of the drift region 107 may further extend between the lower portion of the source region 112 and the well region 110. In this case, the channel region 107b may be formed to further extend between the lower portion of the source region 112 and the well region 110.

The above structure may allow the channel region 107b to be more restricted between the gate electrode layer 120 and the well region 110.

The power semiconductor device 100a-2 can include the advantages of the power semiconductor device 100-2 shown in fig. 10 to 12, and in addition, the threshold voltage can be made low.

Fig. 14 is a schematic perspective view illustrating a power semiconductor device 100b-2 according to another embodiment of the present disclosure. Fig. 15 is a plan view showing the power semiconductor device 100b-2 taken along the line VI-VI of fig. 14. Fig. 16 is a sectional view showing the power semiconductor device 100b-2 taken along a line VII-VII of fig. 15. Fig. 17 is a sectional view showing the power semiconductor device 100b-2 taken along line VIII-VIII of fig. 15.

The power semiconductor device 100b-2 according to the embodiment may be implemented by using or partially modifying the power semiconductor device 100-2 in fig. 10 to 12. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 14 to 17, in the power semiconductor device 100b-2, the source region 112 may include a source contact region 112a outside at least one end of the gate electrode layer 120. For example, the source contact region 112a, which is a portion of the source region 112, may refer to a portion connected to the source electrode layer 140.

For example, the well contact region 114 may be doped with second conductive type impurities at a higher concentration than the well region 110 to reduce contact resistance when connecting with the source electrode layer 140.

The source electrode layer 140 may be commonly connected with the source contact region 112a and the well contact region 114.

One example is shown in fig. 14 to 17, in which a source contact region 112a and a well contact region 114 are formed in the source region 112 on one side of the vertical portion 107a of the drift region 107. However, when each of the source region 112 and the well region 110 is divided into a plurality of regions, each of the source contact region 112a and the well contact region 114 may be formed in each corresponding region.

In some embodiments, the plurality of grooves 116 may be arranged to be linearly spaced apart from each other along one direction. As such, the gate electrode layers 120 may also be arranged to be linearly spaced apart from each other in the one direction along the trench 116. In this case, the well region 110, the source region 112, the source contact region 112a, and the well contact region 114 may be formed in the semiconductor layer 105 between the trenches 116 arranged to be linearly spaced apart from each other in the one direction.

For example, the power semiconductor device 100b-2 may be formed by arranging a plurality of the structures of the power semiconductor device 100-2 in fig. 10 to 12 in one direction with the well region 110, the source region 112, the source contact region 112a, and the well contact region 114 disposed therebetween.

For example, when the power semiconductor device 100-2 is an N-type MOSFET, the source contact region 112a may be an N + region and the well contact region 114 may be a P + region.

According to the power semiconductor device 100b-2, the source contact region 112a and the well contact region 114 may be disposed outside the gate electrode layer 120, not between the gate electrode layer 120, so that the gate electrode layer 120 may be more densely arranged. In this way, the channel density of the power semiconductor device 100a-2 can be significantly increased.

Fig. 18 and 19 are sectional views illustrating power semiconductor devices 100c-2 and 100d-2 according to other embodiments of the present disclosure. Each of the power semiconductor devices 100c-2, 100d-2 can be realized by modifying a partial configuration of the power semiconductor device 100b-2 of fig. 14 to 17. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 18, the power semiconductor device 100c-2 may include at least one recess 138 in the source contact region 112a of the source region 112, which is formed to penetrate the source region 112 and to be recessed in the well region 110. A well contact region 114a may be formed on at least a bottom surface of the groove 138 so as to contact the well region 110.

The source electrode layer 140a may be formed to fill the groove 138, and thus the source electrode layer 140a may be connected with the well contact region 114a, the well region 110, and/or the source region 112. The above structure can widen the contact area between the source electrode layer 140a and the well region 110 and the contact area between the source electrode layer 140a and the source region 112, so that the contact resistance therebetween is reduced.

In some embodiments, the well contact region 114a may be formed on the entire surface of the well region 110 exposed by the recess 138. Accordingly, the well contact region 114a may be formed on the well region 110 exposed from the bottom surface and sidewalls of the recess 138. The above-described structure of the well contact region 114a may allow the contact resistance between the source electrode layer 140a and the well region 110 to be further reduced.

Referring to fig. 19, a power semiconductor device 100d-2 may include a channel region 107b forming an accumulation channel instead of the channel region 110a of the power semiconductor device 100b-2 of fig. 14 and 17. The structure of the power semiconductor device 100d-2 including the channel region 107b can be described with reference to fig. 13.

Thus, the power semiconductor device 100d-2 may correspond to the following structure: wherein the power semiconductor device 100a-2 of fig. 13 is in a plurality of connections and a well region 110, a source region 112, a source contact region 112a and a well contact region 114 are arranged therebetween.

Fig. 20 to 22 are schematic perspective views illustrating a method of manufacturing the power semiconductor device 100-2 according to an embodiment of the present disclosure.

Referring to fig. 20, a drift region 107 having a first conductive type may be formed in a semiconductor layer 105 of silicon carbide (SiC). For example, the drift region 107 may be formed on the drain region 102 having the first conductivity type. In some embodiments, drain region 102 may be implemented with a substrate of a first conductivity type, and drift region 107 may be formed in one or more epitaxial layers on the substrate.

Next, a well region 110 having the second conductive type may be formed in the semiconductor layer 105 so as to be in contact with the drift region 107. For example, the formation of the well region 110 may be performed by implanting impurities having the second conductive type into the semiconductor layer 105. The well region 110 may be formed substantially from the surface of the semiconductor layer 105 to a given depth.

For example, well region 110 may be formed in semiconductor layer 105 such that drift region 107 includes vertical portion 107a, at least a portion of which vertical portion 107a is surrounded by well region 110. In more detail, the well region 110 may be formed by doping impurities of a conductivity type opposite to that of the drift region 107 in the drift region 107.

Next, a pillar region 111 having the second conductivity type may be formed in semiconductor layer 105 under well region 110 such that pillar region 111 contacts drift region 107 to form a super junction with drift region 107. The pillar regions 111 may be formed by implanting impurities of the same second conductive type as the well region 110. The well region 110 and the pillar region 111 may be formed in any order.

Then, a source region 112 having the first conductivity type may be formed in the well region 110. For example, the source region 112 may be formed by implanting impurities of the first conductive type into the well region 110. The source region 112 may be formed in the well region 110 to substantially a given depth from the surface of the semiconductor layer 105.

In addition to forming the source region 112, a channel region 110a in which an inversion channel is formed in one direction may be formed in the semiconductor layer 105 between the source region 112 and the drift region 107. The channel region 110a may be formed between the source region 112 and the vertical portion 107a of the drift region 107. For example, the channel region 110a may be a portion of the well region 110, and may be formed by implanting impurities of the second conductive type into the semiconductor layer 105.

In a modification of the embodiment, the order of forming the well region 110, the pillar region 111, the source region 112, and the channel region 110a, or the impurity doping order may be changed to an arbitrary order.

Alternatively, a heat treatment process for activating or diffusing impurities may be performed after the ion implantation.

Referring to fig. 21, at least one trench 116 may be formed to be recessed into the semiconductor layer 105 to a given depth from the surface of the semiconductor layer 105.

For example, the trench 116 may extend across the drift region 107 in one direction and may be formed shallower than the well region 110.

In addition, the at least one trench 116 may include a plurality of trenches 116, and the trenches 116 may be simultaneously formed in the semiconductor layer 105, for example, in parallel in one direction. Channel region 110a may be further bounded by trench 116.

For example, the trench 116 may be formed by forming a photomask using photolithography, and then etching the semiconductor layer 105 by using the photomask as an etching protective layer.

Referring to fig. 22, a gate insulating layer 118 may be formed on the bottom and inner walls of the trench 116. For example, the gate insulating layer 118 may be formed by oxidizing the semiconductor layer 105 to form an oxide or by depositing an insulating material such as an oxide or a nitride over the semiconductor layer 105.

The patterning process may be performed by using a photolithography process and an etching process. The photolithography process may include a process of forming a photoresist pattern as a mask layer by using a photolithography process and a development process, and the etching process may include a process of selectively etching the underlying structure by using the photoresist pattern.

Next, an interlayer insulating layer 130 may be formed on the gate electrode layer 120.

Meanwhile, the power semiconductor device 100a-2 of fig. 13 may be manufactured by adding some processes to the manufacturing method of the above-described power semiconductor device 100-2 or changing or modifying the manufacturing method. For example, the channel region 107b may be formed with a portion of the drift region 107 to form an accumulation channel.

The power semiconductor device 100b-2 of fig. 14 to 17 may be manufactured by adding some processes to the manufacturing method of the above-described power semiconductor device 100-2 or changing or modifying the manufacturing method.

For example, when manufacturing the power semiconductor device 100b-2, the forming of the source region 112 may include forming a source contact region 112a connected to the source electrode layer 140 outside at least one end of the gate electrode layer 120. In some embodiments, the source contact region 112a may be a portion of the source region 112.

When manufacturing the power semiconductor device 100b-2, the trenches 116 may be arranged to be linearly spaced apart from each other in one direction. In addition, the well region 110, the channel region 110a, and the source region 112 may be formed in the semiconductor layer 105 between the trenches 116.

The method of manufacturing the power semiconductor device 100c-2 described with reference to fig. 18 may further include: forming at least one recess 138 in the source region 112 to penetrate the source region 112 and to be recessed in the well region 110; a well contact region 114 is formed on a bottom surface of the groove 138 to contact the well region 110, and a source electrode layer 140 is formed to connect with the well contact region 114.

According to the manufacturing method described above, the power semiconductor device 100-2 using the semiconductor layer 105 of silicon carbide can be economically manufactured by using a process applied to a conventional silicon substrate.

Fig. 24 is a schematic perspective view illustrating a power semiconductor device 100-3 according to an embodiment of the present disclosure. Fig. 25 is a plan view showing the power semiconductor device 100-3 taken along line II-II of fig. 24. Refer to fig. 24. Fig. 26 is a sectional view showing the power semiconductor device 100-3 taken along the line III-III of fig. 25. Fig. 27 is a sectional view showing the power semiconductor device 100-3 taken along line IV-IV of fig. 25.

Referring to fig. 24 to 27, the power semiconductor device 100-3 may include a semiconductor layer 105, a gate insulating layer 118, and at least one gate electrode layer 120. For example, the power semiconductor device 100-3 may have a power MOSFET structure.

For example, the semiconductor layer 105 may be formed of silicon carbide (SiC). In more detail, the semiconductor layer 105 may include at least one epitaxial layer of silicon carbide.

Silicon carbide (SiC) can have a wider band gap than silicon and therefore can maintain stability than silicon even at high temperatures. In addition, since the breakdown electric field of silicon carbide is higher than that of silicon, silicon carbide can stably operate even at high temperatures. Therefore, the power semiconductor device 100-3 including the semiconductor layer 105 formed of silicon carbide may have a high breakdown voltage, and may provide excellent heat release characteristics and stable operation characteristics at high temperatures, as compared to the case of using silicon.

In more detail, the semiconductor layer 105 may include a drift region 107. The drift region 107 may have the first conductive type, and may be formed by implanting impurities of the first conductive type into a portion of the semiconductor layer 105. For example, the drift region 107 may be formed by doping impurities of the first conductivity type in an epitaxial layer of silicon carbide.

For example, well region 110 may be formed to surround at least a portion of drift region 107. As such, drift region 107 may include a vertical portion 107a, at least a portion of which vertical portion 107a is surrounded by well region 110. In operation of power semiconductor device 100-3, vertical portion 107a may provide a vertical movement path for charge.

The well region 110 shown in fig. 24 is a region including two regions spaced apart from each other and a vertical portion 107a interposed therebetween, but the well region 110 may be variously changed or modified. For example, the vertical portion 107a may have a shape whose side is surrounded by the well region 110 at a time.

The field reduction region 111 may be formed to be spaced apart from the well region 110 at a given depth of the semiconductor layer 105, and may have the second conductivity type. The field reduction region 111 may be formed by implanting impurities of the second conductive type, and the doping concentration of the field reduction region 111 may be the same as that of the well region 110 or may be lower than that of the well region 110.

The channel region 110a may be formed in the semiconductor layer 105 between the drift layer 107 and the source region 112. For example, the channel region 110a may have the second conductive type, and an inversion channel may be formed in the channel region 110a along one direction in the operation of the power semiconductor device 100-3.

In some embodiments, the channel region 110a may be a portion of the well region 110. In this case, the channel region 110a may be entirely formed to be continuously connected with the well region 110. The doping concentration of the second conductive type impurity of the channel region 110a may be the same as that of the rest of the well region 110 or may be different to adjust the threshold voltage.

In some embodiments, the well region 110, the channel region 110a, and the source region 112 may be formed to be symmetrical with respect to the vertical portion 107a of the drift region 107. For example, the well region 110, the channel region 110a, and the source region 112 may be formed at opposite ends of the vertical portion 107a of the drift region 107, or each of the well region 110, the channel region 110a, and the source region 112 may include a first portion and a second portion that are formed to be symmetrical with respect to the vertical portion 107a of the drift region 107. In each of the well region 110, the channel region 110a, and the source region 112, the first portion and the second portion may be separated from each other or may be connected to each other.

At least one trench 116 may be formed to be recessed from the surface of the semiconductor layer 105 into the semiconductor layer 105 to a given depth. The trench 116 may extend in one direction within the semiconductor layer 105. One direction may refer to a length direction of the groove 116 instead of a depth direction of the groove 116, and may refer to a direction of a line III-III of fig. 25.

A gate insulating layer 118 may be formed on at least an inner wall of the trench 116. For example, the gate insulating layer 118 may be formed on the inner surface of the trench 116 and on the semiconductor layer 105 outside the trench 116. The thickness of the gate insulating layer 118 may be uniform, or a portion of the gate insulating layer 118 formed on the bottom surface of the trench 116 may be thicker than a portion of the gate insulating layer 118 formed on the sidewall of the trench 116, so that the electric field is reduced at the bottom of the trench 116.

Well region 110 may be formed deeper than gate electrode layer 120 so as to surround the bottom surface of gate electrode layer 120 at one end portion of gate electrode layer 120. In addition, well region 110 may be formed deeper than gate electrode layer 120 so as to surround the bottom surface of gate electrode layer 120 at opposite ends of gate electrode layer 120. In this way, the opposite end portions of the gate electrode layer 120 around the source region 112 may be surrounded by the well region 110.

The field reduction region 111 may be formed to be spaced apart from the well region 110 in the semiconductor layer 105 under the bottom surface of the gate electrode layer 120. In more detail, the field reducing region 111 may be formed to contact the gate insulating layer 118 below the bottom surface of the gate electrode layer 120 and to surround the bottom surface of the trench 116 or the gate electrode layer 120. The field reducing region 111 may have a floating structure in which an external power source is not directly applied.

According to the floating structure, the well region 110 may surround the bottom surface of the gate electrode layer 120 at opposite ends thereof, and the field reduction region 111 may surround the bottom surface at a central portion of the gate electrode layer 120. Accordingly, the structure of the well region 110 and the arrangement of the field reducing regions 111 may further alleviate the concentration of the electric field on the bottom surface of the trench 116, i.e., at the lower portion of the gate electrode layer 120.

In this way, the electric field margin covering the gate insulating layer 118 of the power semiconductor device 100-3 may be increased, and thus, the operational reliability of the power semiconductor device 100-3 may be improved. In addition, the junction resistance of the vertical portion 107a of the drift region 107 can be reduced by reducing the electric field of the bottom surface of the trench 116 and reducing the electric field of the cover gate insulating layer 118.

In some embodiments, the gate insulating layer 118 and the gate electrode layer 120 may be formed in the trench 116, and furthermore, may be formed to further extend to the outside of the trench 116.

Further, the field reducing region 111 may be disposed in contact with the gate insulating layer 118 below the bottom surface of the trench 116 or below the bottom surface of the gate electrode layer 120, respectively. In this case, the field reduction regions 111 may collectively refer to a plurality of island regions.

In the above-described power semiconductor device 100-3, the first conductivity type and the second conductivity type may be opposite to each other, and each of the first conductivity type and the second conductivity type may be one of an n-type and a p-type. For example, when the first conductivity type is n-type, the second conductivity type is p-type, and vice versa.

In more detail, when the power semiconductor device 100-3 is an N-type MOSFET, the drift region 107 may be an N-region, the source region 112 and the drain region 102 may be N + regions, and the well region 110, the field reduction region 111, and the channel region 110a may be P-regions.

In operation of the power semiconductor device 100-3, current may generally flow in a vertical direction from the drain region 102 along the vertical portion 107a of the drift region 107 and may then flow through the channel region 110a along the side surface of the gate electrode layer 120 to the source region 112.

In the above-described power semiconductor device 100-3, the gate electrode layers 120 in the trenches 116 may be densely arranged in parallel in a stripe type or a line type, and the channel regions 110a may be disposed on the side surfaces of the gate electrode layers 120. Therefore, the channel density can be increased.

Fig. 28 and 29 are cross-sectional views illustrating a power semiconductor device 100a-3 according to another embodiment of the present disclosure. The power semiconductor device 100a-3 may be realized by modifying a partial configuration of the power semiconductor device 100-3 in fig. 24 to 27, and thus, additional description will be omitted to avoid redundancy.

Referring to fig. 28 and 29, the field reducing region 111a may be disposed under a bottom surface of the gate electrode layer 120, i.e., may be formed to be spaced apart from the gate insulating layer 118 under the bottom surface of the gate electrode layer 120. In addition, the field reduction region 111a may be arranged in an island structure or a floating structure to be surrounded by the drift region 107 under the gate electrode layer 120.

When a plurality of trenches 116 are provided, the field reducing regions 111a may be disposed under the bottom surfaces of the trenches 116 or the bottom surface of the gate electrode layer 120, respectively, in a floating structure or an island-like structure.

Even in the floating structure or the island-like structure, the field reducing region 111a may be disposed below the bottom surface of the trench 116, thereby alleviating electric field concentration on the gate insulating layer 118 of the bottom surface of the trench 116.

Fig. 30 is a cross-sectional view illustrating a power semiconductor device 100b-3 according to another embodiment of the present disclosure. The power semiconductor device 100b-3 may be implemented by using or partially modifying the power semiconductor device 100-3 or 100a-3 in fig. 24 to 29. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 30, in the power semiconductor device 100b-3, a channel region 107b may be formed in the semiconductor layer 105 between the drift region 107 and the source region 112. For example, the channel region 107b may have the first conductivity type. In operation of the power semiconductor device 100b-3, an accumulation channel may be formed in the channel region 107 b.

In this case, the source region 112, the channel region 107b, and the drift region 107 may be normally electrically connected. However, in the structure of the semiconductor layer 105 of silicon carbide, a potential barrier is formed while the energy band of the channel region 107b is bent upward due to the influence of negative charges generated by the formation of carbon clusters in the gate insulating layer 118. In this manner, an accumulation channel that allows electric charges or current to flow in the channel region 107b only when an operating voltage is applied to the gate electrode layer 120 can be formed.

Therefore, the threshold voltage applied to the gate electrode layer 120 for forming the accumulation channel in the channel region 107b can be considerably lower than the threshold voltage applied to the gate electrode layer 120 for forming the inversion channel of the channel region 110a in fig. 24 to 28.

In some embodiments, the channel region 107b may be a portion of the drift region 107. In more detail, the channel region 107b may be a portion of the vertical portion 107a of the drift region 107. For example, the channel region 107b may be integrally formed with the drift region 107. In this case, the drift region 107 may be connected with the source region 112 through the channel region 107 b. That is, the drift region 107 and the source region 112 may contact each other at a channel region (107b) portion.

The doping concentration of the first conductive type impurity of the channel region 107b may be the same as or may be different from that of the remaining portion of the drift region 107 to adjust the threshold voltage.

In addition, the well region 110 may further include a tap portion extending toward the gate electrode layer 120 at an end of the protruding portion. The channel region 107b may be formed in a curved shape on the protruding portion and the tap portion of the well region 110.

The above structure may allow the channel region 107b to be more restricted between the gate electrode layer 120 and the well region 110.

The power semiconductor device 100b-3 can include the advantages of the power semiconductor devices 100-3 and 100a-3 in fig. 24 to 28, and in addition, the threshold voltage can be made lower.

Fig. 31 is a schematic perspective view illustrating a power semiconductor device 100c-3 according to another embodiment of the present disclosure. Fig. 32 is a plan view showing the power semiconductor device 100c-3 taken along the line IX-IX of fig. 31. Fig. 33 is a sectional view showing the power semiconductor device 100c-3 taken along the line X-X of fig. 32.

The power semiconductor device 100c-3 according to the embodiment may be implemented by using or partially modifying the power semiconductor device 100-3 in fig. 24 to 27. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 31 to 33, in the power semiconductor device 100c-3, the source region 112 may include a source contact region 112a outside at least one end of the gate electrode layer 120. For example, the source contact region 112a, which is a portion of the source region 112, may refer to a portion connected to the source electrode layer 140.

The source electrode layer 140 may be commonly connected with the source contact region 112a and the well contact region 114.

The source contact region 112a and the well contact region 114 may be formed in the source region 112 at one side of the vertical portion 107a of the drift region 107. In a modified example of the embodiment, when each of the source region 112 and the well region 110 is divided into a plurality of regions, each of the source contact region 112a and the well contact region 114 may be formed in each corresponding region.

In some embodiments, the plurality of grooves 116 may be arranged to be linearly spaced apart from each other along one direction. As such, the gate electrode layers 120 may also be arranged to be linearly spaced apart from each other in the one direction along the trench 116. In this case, the well region 110, the source region 112, the source contact region 112a, and the well contact region 114 may be formed in the semiconductor layer 105 between the trenches 116 arranged to be linearly spaced apart from each other in the one direction.

For example, the power semiconductor device 100c-3 may be formed by arranging a plurality of the structures of the power semiconductor device 100-3 in fig. 24 to 27 along one direction, and by arranging the well region 110, the source region 112, the source contact region 112a, and the well contact region 114 therebetween.

For example, when the power semiconductor device 100-3 is an N-type MOSFET, the source contact region 112a may be an N + region and the well contact region 114 may be a P + region.

According to the power semiconductor device 100c-3, the source contact region 112a and the well contact region 114 may be disposed outside the gate electrode layer 120, not between the gate electrode layer 120, so that the gate electrode layer 120 may be more densely arranged. In this way, the channel density of the power semiconductor devices 100a-3 can be significantly increased.

Meanwhile, the structure of the power semiconductor device 100c-3 may be applied to the power semiconductor devices 100a-3 in fig. 28 and 29 and the power semiconductor device 100b-3 in fig. 30. That is, the power semiconductor device 100a-3 or the power semiconductor device 100b-3 may be aligned in a plurality of arrangements, and the well region 110, the source region 112, the source contact region 112a, and the well contact region 114 may be disposed therebetween.

Fig. 34 is a cross-sectional view illustrating a power semiconductor device 100d-3 according to another embodiment of the present disclosure. The power semiconductor device 100d-3 may be realized by modifying a partial configuration of the power semiconductor device 100c-3 in fig. 31 to 33. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 34, the power semiconductor device 100d-3 may include at least one recess 138 in the source contact region 112a of the source region 112, the recess 138 being formed to penetrate the source region 112 and to be recessed in the well region 110. A well contact region 114a may be formed on at least a bottom surface of the groove 138 to contact the well region 110.

The source electrode layer 140a may be formed to fill the groove 138 and may be connected to the well contact region 114a, the well region 110, and/or the source region 112. The above structure can widen the contact area between the source electrode layer 140a and the well region 110 and the contact area between the source electrode layer 140a and the source region 112, so that the contact resistance therebetween is reduced.

Meanwhile, the field reducing region 111 may be disposed in contact with the gate insulating layer 118, but may be modified to be spaced downward from the gate insulating layer 118.

Fig. 35 to 37 are schematic perspective views illustrating a method of manufacturing the power semiconductor device 100-3 according to an embodiment of the present disclosure.

Referring to fig. 35, a drift region 107 having a first conductive type may be formed in a semiconductor layer 105 of silicon carbide (SiC). For example, the drift region 107 may be formed on the drain region 102 having the first conductivity type. In some embodiments, drain region 102 may be implemented with a substrate of a first conductivity type, and drift region 107 may be formed in one or more epitaxial layers on the substrate.

Next, a well region 110 having the second conductive type may be formed in the semiconductor layer 105 so as to be in contact with the drift region 107. For example, the formation of the well region 110 may be performed by implanting impurities having the second conductivity type in the semiconductor layer 105. The well region 110 may be formed substantially to a given depth from the surface of the semiconductor layer 105.

Before or after the well region 110 is formed, a field reduction region 111 having the second conductivity type may be formed at a given depth of the semiconductor layer 105 such that the field reduction region 111 is spaced apart from the well region 110. For example, the field reduction region 111 may be formed by implanting impurities of the second conductive type into the semiconductor layer 105.

In addition to the formation of the source region 112, a channel region 110a in which an inversion channel is formed in one direction may be formed in the semiconductor layer 105 between the source region 112 and the drift region 107. Channel region 110a the channel region 110a may be formed between the source region 112 and the vertical portion 107a of the drift region 107. For example, the channel region 110a may be a portion of the well region 110, and may be formed by implanting impurities of the second conductive type into the semiconductor layer 105.

In the modified example of the embodiment, the order in which the well region 110, the source region 112, the channel region 110a, and the field reduction region 111 are doped with impurities may be arbitrarily changed.

In the above manufacturing method, impurity implantation or impurity doping may be performed so that the impurities are mixed or form an epitaxial layer when the impurities are implanted into the semiconductor layer 105. However, an ion implantation method using a mask pattern may be used to implant impurities in the selected region.

Alternatively, a heat treatment process for activating or diffusing impurities may be performed after the ion implantation.

Referring to fig. 36, at least one trench 116 may be formed to be recessed into the semiconductor layer 105 to a given depth from the surface of the semiconductor layer 105.

For example, the trench 116 may extend across the drift region 107 in one direction and may be formed shallower than the well region 110.

In addition, the at least one trench 116 may include a plurality of trenches 116, and for example, the trenches 116 may be simultaneously formed in parallel in one direction in the semiconductor layer 105. Channel region 110a may be further bounded by trench 116.

For example, the trench 116 may be formed by: a photomask is formed by using photolithography, and then the semiconductor layer 105 is etched by using the photomask as an etching protective layer.

Referring to fig. 37, a gate insulating layer 118 may be formed on the bottom and inner walls of the trench 116. For example, the gate insulating layer 118 may be formed by oxidizing the semiconductor layer 105 to form an oxide or by depositing an insulating material such as an oxide or a nitride on the semiconductor layer 105.

In this way, well region 110 may be arranged deeper than gate electrode layer 120 so as to surround the bottom surface of gate electrode layer 120 at one end of gate electrode layer 120, and channel region 110a may be formed in semiconductor layer 105 between drift region 107 and source region 112, on one side or the opposite side of gate electrode layer 120. Also, the field reducing region 111 may be disposed in contact with the gate insulating layer 118 under the bottom surface of the gate electrode layer 120.

Next, an interlayer insulating layer 130 may be formed on the gate electrode layer 120.

Meanwhile, the power semiconductor device 100b-3 in fig. 30 may be manufactured by adding some processes to the manufacturing method of the above-described power semiconductor device 100-3 or changing or modifying the manufacturing method. For example, the channel region 107b may be formed with a portion of the drift region 107 to form an accumulation channel.

The power semiconductor device 100c-3 of fig. 31 to 33 may be manufactured by adding some processes to the manufacturing method of the above-described power semiconductor device 100-3 or changing or modifying the manufacturing method.

For example, when manufacturing the power semiconductor device 100c-3, the forming of the source region 112 may include forming a source contact region 112a connected to the source electrode layer 140 outside at least one end of the gate electrode layer 120. In some embodiments, the source contact region 112a may be a portion of the source region 112.

When manufacturing the power semiconductor device 100c-3, the trenches 116 may be arranged to be linearly spaced apart from each other in one direction. In addition, the well region 110, the channel region 110a, and the source region 112 may be formed in the semiconductor layer 105 between the trenches 116.

The method of manufacturing the power semiconductor device 100d-3 described with reference to fig. 34 may further include: forming at least one recess 138 in the source region 112 to penetrate the source region 112 and to be recessed in the well region 110; a well contact region 114 is formed on a bottom surface of the groove 138 so as to contact the well region 110, and a source electrode layer 140 is formed to connect with the well region 114.

According to the manufacturing method described above, the power semiconductor device 100-3 using the semiconductor layer 105 of silicon carbide can be economically manufactured by using a process applied to a conventional silicon substrate.

Fig. 38 is a schematic perspective view illustrating a power semiconductor device 100-4 according to an embodiment of the present disclosure. Fig. 39 is a plan view showing the power semiconductor device 100-4 taken along the line II-II of fig. 38. FIG. 38. Fig. 40 is a sectional view showing the power semiconductor device 100-4 taken along the line III-III of fig. 39. Fig. 41 is a sectional view showing the power semiconductor device 100-4 taken along line IV-IV of fig. 39.

Referring to fig. 38 to 41, the power semiconductor device 100-4 may include at least a semiconductor layer 105, a gate insulating layer 118, and a gate electrode layer 120. For example, the power semiconductor device 100-4 may have a power MOSFET structure.

For example, the semiconductor layer 105 may be formed of silicon carbide (SiC). In more detail, the semiconductor layer 105 may include at least one epitaxial layer of silicon carbide.

Silicon carbide (SiC) can have a wider band gap than silicon and therefore maintains stability than silicon even at high temperatures. In addition, since the breakdown electric field of silicon carbide is higher than that of silicon, silicon carbide can stably operate even at high temperatures. Therefore, the power semiconductor device 100-4 including the semiconductor layer 105 formed of silicon carbide can have a high breakdown voltage and can provide excellent heat release characteristics and stable operation characteristics at high temperatures, as compared with the case of using silicon.

The well region 110 may be formed in the semiconductor layer 105 to contact the drift region 107, and may have the second conductive type. For example, the well region 110 may be formed by doping impurities of a second conductivity type opposite to the first conductivity type in the drift region 107.

For example, well region 110 may be formed to surround at least a portion of drift region 107. As such, drift region 107 may include a vertical portion 107a, at least a portion of which vertical portion 107a is surrounded by well region 110. In operation of the power semiconductor device 100-4, the vertical portion 107a may provide a vertical movement path for charge.

The well region 110 shown in fig. 38 is a well region including two regions spaced apart from each other and the vertical portion 107a interposed therebetween, but the well region 110 may be variously changed or modified. For example, the vertical portion 107a may have a shape whose side is surrounded by the well region 110 at a time.

The channel region 110a may be formed in the semiconductor layer 105 between the drift region 107 and the source region 112. For example, the channel region 110a may have the second conductive type, and in the operation of the power semiconductor device 100-4, an inversion channel may be formed in the channel region 110a along one direction.

In some embodiments, the channel region 110a may be a portion of the well region 110. In this case, the channel region 110a may be integrally formed to be continuously connected with the well region 110. The doping concentration of the second conductive-type impurity of the channel region 110a may be the same as or may be different from that of the rest of the well region 110 for adjustment of the threshold voltage.

In some embodiments, the well region 110, the channel region 110a, and the source region 112 may be formed symmetrically with respect to the vertical portion 107a of the drift region 107. For example, the well region 110, the channel region 110a, and the source region 112 may be formed at opposite ends of the vertical portion 107a of the drift region 107, or each of the well region 110, the channel region 110a, and the source region 112 may include a first portion and a second portion formed to be symmetrical with respect to the vertical portion 107a of the drift region 107. In each of the well region 110, the channel region 110a, and the source region 112, the first portion and the second portion may be separated from each other or may be connected to each other.

In addition, the drain region 102 may be formed in the semiconductor layer 105 under the drift region 107, and the drain region 102 may have the first conductivity type. For example, the drain region 102 may be doped with impurities at a high concentration as compared to the drift region 107.

In some embodiments, drain region 102 may be implemented with a substrate of silicon carbide having a first conductivity type. In this case, the drain region 102 may be understood as a part of the semiconductor layer 105 or may be understood as a substrate independent of the semiconductor layer 105.

At least one trench 116 may be formed to be recessed from the surface of the semiconductor layer 105 into the semiconductor layer 105 to a given depth. The trench 116 may extend in one direction within the semiconductor layer 105. One direction may refer to a length direction of the groove 116 instead of a depth direction of the groove 116, and may refer to a direction of a line III-III or a line IV-IV of fig. 39.

At least one gate electrode layer 120 may be formed on the gate insulating layer 118 so as to bury the trench 116. For example, the gate electrode layer 120 may include an appropriate conductive material such as polysilicon, metal nitride, or metal silicide, or may include a stacked structure thereof.

Well region 110 may be formed deeper than gate electrode layer 120 so as to surround the bottom surface of gate electrode layer 120 at one end of gate electrode layer 120. In addition, well region 110 may be formed deeper than gate electrode layer 120 so as to surround the bottom surface of gate electrode layer 120 at opposite ends of gate electrode layer 120. In this way, the opposite end portions of the gate electrode layer 120 around the source region 112 may be surrounded by the well region 110.

The well (110) structure may further mitigate electric field concentration on the bottom surface of the trench 116 (i.e., below the gate electrode layer 120). Further, the deep well region 111 may be disposed under the well region 110, thereby more reducing an electric field covering the gate insulating layer 118 and an electric field of the bottom surface of the trench 116. In this way, the margin of the electric field covering the gate insulating layer 118 of the power semiconductor device 100-4 can be increased, and therefore, the reliability of the operation of the power semiconductor device 100-4 can be improved. In addition, the junction resistance of the vertical portion 107a of the drift region 107 can be reduced by reducing the electric field of the bottom surface of the trench 116 and reducing the electric field of the cover gate insulating layer 118.

In some embodiments, the gate insulating layer 118 and the gate electrode layer 120 may be formed in the trench 116, and furthermore, may be formed to further extend to the outside of the trench 116.

In addition, the source electrode layer 140 may be in contact with a portion of the drift region 107 to form a Schottky Barrier Diode (SBD). The schottky barrier diode SBD may refer to a diode using a schottky barrier through a junction of a semiconductor and a metal.

In addition to the schottky barrier diode SBD, a parasitic body diode may be formed in the power semiconductor device 100-4. For example, a body diode may be formed between the well region 110 and the drift region 107. The body diode may be a PN diode formed when different types of semiconductor materials are bonded together.

As can be understood from fig. 48, the schottky barrier diode SBD has a low forward voltage VF and a fast switching characteristic compared to the PN diode.

In operation of the power semiconductor device 100-4, a Schottky Barrier Diode (SBD) may reduce switching losses along with the body diode. For example, the schottky barrier diode SBD and the body diode may be used as a freewheeling diode in the operation of the power semiconductor device 100-4.

In some embodiments, source region 112 may include a source contact region 112a outside at least one end of gate electrode layer 120. For example, the source contact region 112a may refer to a region of the semiconductor layer 105 connected to the source electrode layer 140.

For example, the source contact region 112a may include a portion of the source region 112 outside of at least one end of the gate electrode layer 120, a portion of the well region 110, and an overhang portion 107c of the drift region 107 exposed from the well region 110.

The well contact region 114 may be formed on a portion of the well region 110 in the source contact region 112a, and may have the second conductive type. For example, one well contact region 114 or a plurality of well contact regions 114 may be formed in the source contact region 112 a. In addition, the well contact region 114 may be doped with second conductive type impurities at a higher concentration than the well region 110 to reduce contact resistance when being connected to the source electrode layer 140.

The source electrode layer 140 may be connected to the source contact region 112a and thus may be commonly connected to the source region 112, the well contact region 114, and the protruding portion 107c of the drift region 107.

In some embodiments, the plurality of grooves 116 may be arranged to be linearly spaced apart from each other along one direction. As such, the gate electrode layers 120 may also be arranged to be linearly spaced apart from each other in the one direction along the trench 116. In this case, the well region 110, the source region 112, the source contact region 112a, the schottky barrier diode SBD, and the well contact region 114 may be formed in the semiconductor layer 105 between the trenches 116 arranged to be linearly spaced apart from each other in the one direction.

In the power semiconductor device 100-4 described above, the first conductivity type and the second conductivity type may be opposite to each other, and each of the first conductivity type and the second conductivity type may be one of an n-type and a p-type. For example, when the first conductivity type is n-type, the second conductivity type is p-type, and vice versa.

In more detail, when the power semiconductor device 100-4 is an N-type MOSFET, the drift region 107 may be an N-region, the source region 112 and the drain region 102 may be N + regions, the well region 110 and the channel region 110a may be P-regions, and the well contact region 114 may be a P + region.

In operation of the power semiconductor device 100-4, current may generally flow in a vertical direction from the drain region 102 along the vertical portion 107a of the drift region 107 and may then flow through the channel region 110a along the side surface of the gate electrode layer 120 to the source region 112.

In the above-described power semiconductor device 100-4, the gate electrode layers 120 in the trenches 116 may be densely arranged in parallel in a stripe type or a line type, and the channel regions 110a may be disposed on the side surfaces of the gate electrode layers 120. Therefore, the channel density can be increased.

According to the power semiconductor device 100-4, the source contact region 112a and the well contact region 114 may be arranged outside the gate electrode layer 120, not between the gate electrode layers 120, so that the gate electrode layers 120 may be arranged more densely. In this way, the channel density of the power semiconductor device 100-4 can be significantly increased.

Fig. 42 and 43 are cross-sectional views illustrating power semiconductor devices 100a-4 according to another embodiment of the present disclosure. The power semiconductor device 100a-4 according to the embodiment can be realized by modifying a partial configuration of the power semiconductor device 100-4 in fig. 38 to 41. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 42 and 43, the power semiconductor device 100a-4 may include at least one recess 138, the recess 138 being formed by etching a portion of the drift region 107 (e.g., the protruding portion 107c), a portion of the source region 112, and a portion of the well region 110. For example, the recess 138 may be formed by etching the source contact region 112a in the power semiconductor device 100-4 of fig. 38 to 41.

The well contact region 114a may be formed on a portion of the well region 110 exposed from the recess 138. For example, the well contact region 114a may be formed on a portion of the well region 110 corresponding to the bottom surface of the groove 138. The well contact region 114a may have the second conductivity type and may be more heavily doped than the well contact region 114.

The source electrode layer 140a may be formed to fill the groove 138, and may commonly contact the well contact region 114a, the protruding portion 107c of the drift region 107, and the source region 112 within the groove 138. The contact of the protruding portion 107c of the drift region 107 with the source electrode layer 140 may form a schottky barrier diode SBD.

The above structure may widen the area of the source electrode layer 140a contacting the source region 112 and the well contact region 114a, so that the contact resistance therebetween is reduced.

Fig. 44 is a schematic cross-sectional view illustrating a power semiconductor device 100b-4 according to another embodiment of the present disclosure. The power semiconductor device 100b-4 according to the embodiment can be realized by modifying a partial configuration of the power semiconductor device 100-4 in fig. 38 to 41. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 44, instead of the channel region 110a of the power semiconductor device 100-4 in fig. 38 to 41, the power semiconductor device 100b-4 may include a channel region 107b forming an accumulation channel.

In the power semiconductor device 100b-4, the channel region 107b may be formed in the semiconductor layer 105 between the drift region 107 and the source region 112. For example, the channel region 107b may have the first conductivity type, and in the operation of the power semiconductor device 100b-4, an accumulation channel may be formed in the channel region 107 b.

In this case, the source region 112, the channel region 107b, and the drift region 107 may be normally electrically connected. However, in the structure of the semiconductor layer 105 of silicon carbide, a potential barrier is formed while the energy band of the channel region 107b is bent upward due to the influence of negative charges generated by the formation of carbon clusters in the gate insulating layer 118. In this manner, an accumulation channel that allows electric charges or current to flow in the channel region 107b only when an operating voltage is applied to the gate electrode layer 120 can be formed.

In some embodiments, the channel region 107b may be a portion of the drift region 107. In more detail, the channel region 107b may be a portion of the vertical portion 107a of the drift region 107. For example, the channel region 107b may be integrally formed with the drift region 107. In this case, the drift region 107 may be connected with the source region 112 through the channel region 107 b. That is, in the channel region 107b portion, the drift region 107 and the source region 112 may contact each other.

Furthermore, the vertical portion 107a of the drift region 107 may further extend between the lower portion of the source region 112 and the well region 110. In this case, the channel region 107b may be formed to further extend between the lower portion of the source region 112 and the well region 110.

The above structure may allow the channel region 107b to be more restricted between the gate electrode layer 120 and the well region 110.

The power semiconductor device 100b-4 can include the advantages of the power semiconductor device 100-4 in fig. 38 to 41, and in addition, the threshold voltage can be made lower.

Fig. 45 to 47 are schematic perspective views illustrating a method of manufacturing the power semiconductor device 100-4 according to an embodiment of the present disclosure.

Referring to fig. 45, a drift region 107 having a first conductive type may be formed in a semiconductor layer 105 of silicon carbide (SiC). For example, the drift region 107 may be formed on the drain region 102 having the first conductivity type. In some embodiments, drain region 102 may be implemented with a substrate of a first conductivity type, and drift region 107 may be formed in one or more epitaxial layers on the substrate.

Next, a well region 110 having the second conductive type may be formed in the semiconductor layer 105 so as to be in contact with the drift region 107. For example, the formation of the well region 110 may be performed by implanting impurities of the second conductive type on the semiconductor layer 105.

In addition to forming the source region 112, a channel region 110a in which an inversion channel is formed in one direction may be formed in the semiconductor layer 105 between the source region 112 and the drift region 107. The channel region 110a may be formed between the source region 112 and the vertical portion 107a of the drift region 107. For example, the channel region 110a is a portion of the well region 110, and may be formed by implanting impurities of the second conductive type into the semiconductor layer 105.

In addition, when the source region 112 is formed, a source contact region 112a including a portion of the source region 112, a portion of the well region 110, and a protruding portion 107c of the drift region 107 exposed from the well region 110 may be formed at least outside one end of the gate electrode layer 120.

In addition, a well contact region 114 having the second conductivity type and being more highly doped than the well region 110 may be formed on a portion of the well region 110. For example, the well contact region 114 may be formed by implanting second conductive type impurities having a higher concentration than the well region 110 into a portion of the well region 110.

In the above steps, impurity implantation or impurity doping may be performed so that the impurities are mixed or form an epitaxial layer when the impurities are implanted into the semiconductor layer 105. However, an ion implantation method using a mask pattern may be used to implant impurities in the selected region.

Alternatively, a heat treatment process for activating or diffusing impurities may be performed after the ion implantation.

Referring to fig. 46, at least one trench 116 may be formed to be recessed into the semiconductor layer 105 to a given depth from the surface of the semiconductor layer 105.

For example, the trench 116 may extend across the drift region 107 in one direction and may be formed shallower than the well region 110.

For example, the trench 116 may be formed by forming a photomask using photolithography and then etching the semiconductor layer 105 by using the photomask as an etching protective layer.

In some embodiments, the grooves 116 may be arranged to be linearly spaced apart from each other along one direction. In addition, the well region 110, the channel region 110a, and the source region 112 may be formed in the semiconductor layer 105 between the trenches 116.

Referring to fig. 47, a gate insulating layer 118 may be formed at least on an inner wall of the trench 116. For example, the gate insulating layer 118 may be formed by oxidizing the semiconductor layer 105 to form an oxide or by depositing an insulating material such as an oxide or a nitride over the semiconductor layer 105.

Next, an interlayer insulating layer 130 may be formed on the gate electrode layer 120.

For example, the source electrode layer 140 may be connected with the source region 112 and may contact a portion of the drift region 107, and thus, a schottky barrier diode SBD may be formed. In some embodiments, the source electrode layer 140 may be connected with the source contact region 112a so as to commonly contact the source region 112, the well contact region 114, and the protruding portion 107c of the drift region 107.

The power semiconductor device 100a-4 of fig. 42 and 43 may be manufactured by adding some processes to the manufacturing method of the above-described power semiconductor device 100-4 or changing or modifying the manufacturing method. For example, the method of manufacturing the power semiconductor device 100a-4 may further include: forming at least one recess 138 by etching a portion of the drift region 107 (e.g., the protruding portion 107a of the drift region 107), a portion of the source region 112, a portion of the well region 110; a well contact region 114 is formed on a portion of the well region 110 corresponding to a bottom surface of the groove 138, and a source electrode layer 140 connected to the source region 112, the protruding portion 107c of the drift region 107, and the well contact region 114 is formed by filling the groove 138.

Meanwhile, the power semiconductor device 100b-4 of fig. 44 may be manufactured by adding some processes to the manufacturing method of the above-described power semiconductor device 100-4 or changing or modifying the manufacturing method. For example, the channel region 107b may be formed with a portion of the drift region 107 to form an accumulation channel.

According to the manufacturing method described above, the power semiconductor device 100-4 using the semiconductor layer 105 of silicon carbide can be economically manufactured by using a process applied to a conventional silicon substrate.

Fig. 49 is a schematic perspective view illustrating a power semiconductor device 100-5 according to an embodiment of the present disclosure. Fig. 50 is a plan view showing the power semiconductor device 100-5 taken along line II-II of fig. 49. Fig. 51 is a sectional view showing the power semiconductor device 100-5 taken along line III-III of fig. 50.

Referring to fig. 49 to 51, the power semiconductor device 100-5 may include at least a semiconductor layer 105, a gate insulating layer 118, and a gate electrode layer 120. For example, the power semiconductor device 100-5 may have a power MOSFET structure.

For example, the semiconductor layer 105 may be formed of silicon carbide (SiC). In more detail, the semiconductor layer 105 may include at least one epitaxial layer of silicon carbide.

Silicon carbide (SiC) can have a wider band gap than silicon and therefore maintains stability than silicon even at high temperatures. In addition, since the breakdown electric field of silicon carbide is higher than that of silicon, silicon carbide can stably operate even at high temperatures. Therefore, the power semiconductor device 100-5 including the semiconductor layer 105 formed of silicon carbide can have a high breakdown voltage and can provide excellent heat release characteristics and stable operation characteristics at high temperatures, as compared with the case of using silicon.

For example, well region 110 may be formed to surround at least a portion of drift region 107. As such, drift region 107 may include a vertical portion 107a, at least a portion of which vertical portion 107a is surrounded by well region 110. In operation of power semiconductor device 100-5, vertical portion 107a may provide a vertical movement path for charge.

The well region 110 is shown in fig. 49 as including two regions spaced apart from each other and a vertical portion 107a interposed therebetween, but the well region 110 may be variously changed or modified. For example, the vertical portion 107a may have a shape whose side is surrounded by the well region 110 at a time.

Deep well region 111 may be formed under well region 110 to contact well region 110 and drift region 107. As with well region 110, deep well region 111 may have a second conductivity type. The doping concentration of the second conductive-type impurity of the deep well region 111 may be equal to or lower than the doping concentration of the second conductive-type impurity of the well region 110.

For example, the deep well region 111 may be formed to have a width narrower than that of the well region 110 based on one direction. One direction may refer to the direction of line III-III of fig. 50. In addition, opposite ends of the deep well region 111 may be arranged to be inwardly offset from opposite ends of the well region 110 based on one direction.

As such, under the well region 110, the deep well region 111 may be disposed to recede inward from an opposite end of the well region 110 in a state of contact with the well region 110. The lower surface and the side surface of the deep well region 111 may contact the drift region 107.

For example, when the deep well region 111 is formed in two regions spaced apart from each other like the well region 110, a spacing distance between the two deep well regions 111 may be greater than a spacing distance between the two well regions 110.

The channel region 110a may be formed in the semiconductor layer 105 between the drift region 107 and the source region 112. For example, the channel region 110a may have the second conductive type, and in the operation of the power semiconductor device 100-5, an inversion channel may be formed in the channel region 110a along one direction.

In some embodiments, the channel region 110a may be a portion of the well region 110. In this case, the channel region 110a may be entirely formed to be continuously connected with the well region 110. The doping concentration of the second conductive type impurity of the channel region 110a may be the same as or may be different from that of the rest of the well region 110 to adjust the threshold voltage.

In some embodiments, the well region 110, the deep well region 111, the channel region 110a, and the source region 112 may be formed to be symmetrical with respect to the vertical portion 107a of the drift region 107. For example, the well region 110, the deep well region 111, the channel region 110a, and the source region 112 may be formed on opposite ends of the vertical portion 107a of the drift region 107, or each of the well region 110, the deep well region 111, the channel region 110a, and the source region 112 may include first and second portions formed to be symmetrical with respect to the vertical portion 107a of the drift region 107. In each of the well region 110, the deep well region 111, the channel region 110a, and the source region 112, the first portion and the second portion may be separated from each other or may be connected to each other.

At least one trench 116 may be formed to be recessed from the surface of the semiconductor layer 105 into the semiconductor layer 105 to a given depth. The trench 116 may extend in one direction within the semiconductor layer 105. One direction may refer to a length direction of the groove 116 instead of a depth direction of the groove 116, and may refer to a direction of a line III-III of fig. 50.

A gate insulating layer 118 may be formed at least on an inner wall of the trench 116. For example, a gate insulating layer 118 may be formed on the inner surface of the trench 116 and on the semiconductor layer 105 outside the trench. The thickness of the gate insulating layer 118 may be uniform, or a portion of the gate insulating layer 118 formed on the bottom surface of the trench 116 may be thicker than a portion of the gate insulating layer 118 formed on the sidewall of the trench 116, so that the electric field is reduced at the bottom of the trench 116.

For example, the gate insulating layer 118 may include an insulating material such as silicon oxide, silicon carbide, silicon nitride, ha (hafnium oxide), zirconium oxide, or aluminum oxide, or may include a stacked structure thereof.

The drift region 107 may be formed in the semiconductor layer 105 on one side of the gate electrode layer 120. For example, the vertical portion 107a of the drift region 107 may extend vertically in the semiconductor layer 105 on one side of the gate electrode layer 120. A channel region 110a may be formed in the semiconductor layer 105 at one side of the gate electrode layer 120 between the vertical portion 107a of the drift region 107 and the source region 112. Accordingly, a structure in which the source region 112, the channel region 110a, and the vertical portion 107a of the drift region 107 are connected in one direction may be included in the semiconductor layer 105 on one side of the gate electrode layer 120.

Well region 110 may be formed deeper than gate electrode layer 120 so as to surround the bottom surface of gate electrode layer 120 at one end of gate electrode layer 120. In addition, well region 110 may be formed deeper than gate electrode layer 120 so as to surround the bottom surface of gate electrode layer 120 at opposite ends of gate electrode layer 120. In this way, the opposite ends of gate electrode layer 120 around source region 112 may be surrounded by well region 110.

The well (110) structure may further mitigate electric field concentration on the bottom surface of trench 116 (i.e., below gate electrode layer 120). Further, the deep well region 111 may be disposed under the well region 110, thereby more reducing an electric field covering the gate insulating layer 118 and an electric field of the bottom surface of the trench 116. In this way, the margin of the electric field covering the gate insulating layer 118 of the power semiconductor device 100-5 can be increased, and therefore, the reliability of the operation of the power semiconductor device 100-5 can be improved. In addition, the junction resistance of the vertical portion 107a of the drift region 107 can be reduced by reducing the electric field of the bottom surface of the trench 116 and reducing the electric field of the cover gate insulating layer 118.

In some embodiments, the gate insulating layer 118 and the gate electrode layer 120 may be formed in the trench 116, and furthermore, may be formed to further extend to the outside of the trench 116.

In the above-described power semiconductor device 100-5, the first conductivity type and the second conductivity type may be opposite to each other, and each of the first conductivity type and the second conductivity type may be one of an n-type and a p-type. For example, when the first conductivity type is n-type, the second conductivity type is p-type, and vice versa.

In more detail, when the power semiconductor device 100-5 is an N-type MOSFET, the drift region 107 may be an N-region, the source region 112 and the drain region 102 may be N + regions, and the well region 110, the deep well region 111, and the channel region 110a may be P-regions.

In operation of the power semiconductor device 100-5, current may generally flow in a vertical direction from the drain region 102 along the vertical portion 107a of the drift region 107 and may then flow through the channel region 110a along the side surface of the gate electrode layer 120 to the source region 112.

In the above-described power semiconductor device 100-5, the gate electrode layers 120 in the trenches 116 may be densely arranged in parallel in a stripe type or a line type, and the channel regions 110a may be disposed on the side surfaces of the gate electrode layers 120. Therefore, the channel density can be increased.

Fig. 52 is a perspective view illustrating a power semiconductor device 100a-5 according to another embodiment of the present disclosure.

The power semiconductor device 100a-5 according to the embodiment may be implemented by using or partially modifying the power semiconductor device 100-5 in fig. 49 to 51. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 52, in the power semiconductor device 100a-5, a channel region 107b may be formed in the semiconductor layer 105 between the drift region 107 and the source region 112. For example, the channel region 107b may have the first conductivity type, and in operation of the power semiconductor devices 100a-5, an accumulation channel may be formed in the channel region 107 b.

In this case, the source region 112, the channel region 107b, and the drift region 107 may be normally electrically connected. However, in the structure of the semiconductor layer 105 of silicon carbide, a potential barrier is formed while the energy band of the channel region 107b is bent upward due to the influence of negative charges generated by the formation of carbon clusters in the gate insulating layer 118. In this manner, an accumulation channel that allows electric charges or current to flow in the channel region 107b only when an operating voltage is applied to the gate electrode layer 120 can be formed.

The above structure may allow the channel region 107b to be more restricted between the gate electrode layer 120 and the well region 110.

The power semiconductor device 100a-5 can include the advantages of the power semiconductor device 100-5 of fig. 49 to 51, and in addition, the threshold voltage can be made low.

Fig. 53 is a schematic perspective view illustrating a power semiconductor device 100b-5 according to another embodiment of the present disclosure. Fig. 54 is a plan view showing the power semiconductor device 100b-5 taken along the line VI-VI of fig. 53. Fig. 55 is a sectional view showing the power semiconductor device 100b-5 taken along the line VII-VII of fig. 54. Fig. 56 is a sectional view showing the power semiconductor device 100b-5 taken along the line VIII-VIII of fig. 54.

The power semiconductor device 100b-5 according to the embodiment may be implemented by using or partially modifying the power semiconductor device 100-5 in fig. 49 to 51. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 53 to 56, in the power semiconductor device 100b-5, the source region 112 may include a source contact region 112a outside at least one end of the gate electrode layer 120. For example, the source contact region 112a, which is a portion of the source region 112, may refer to a portion connected to the source electrode layer 140.

For example, the well contact region 114 may be doped with impurities of the second conductive type at a higher concentration than the well region 110 to reduce contact resistance when being connected to the source electrode layer 140.

The source electrode layer 140 may be commonly connected with the source contact region 112a and the well contact region 114.

In the example shown in fig. 53 to 56, the source contact region 112a and the well contact region 114 are formed in the source region 112 on one side of the vertical portion 107a of the drift region 107. However, when each of the source region 112 and the well region 110 is divided into a plurality of regions, each of the source contact region 112a and the well contact region 114 may be formed in each corresponding region.

In some embodiments, the plurality of grooves 116 may be arranged to be linearly spaced apart from each other along one direction. As such, the gate electrode layers 120 may also be arranged to be linearly spaced apart from each other in the one direction along the trench 116. In this case, the well region 110, the source region 112, the source contact region 112a, and the well contact region 114 may be formed in the semiconductor layer 105 between the trenches 116 arranged to be linearly spaced apart from each other in the one direction.

For example, the power semiconductor device 100b-5 may be formed by arranging the structures of a plurality of power semiconductor devices 100-5 in fig. 49 to 51 in one direction, and by arranging the well region 110, the source region 112, the source contact region 112a, and the well contact region 114 therebetween.

For example, when the power semiconductor device 100-5 is an N-type MOSFET, the source contact region 112a may be an N + region and the well contact region 114 may be a P + region.

According to the power semiconductor device 100b-5, the source contact region 112a and the well contact region 114 may be disposed outside the gate electrode layer 120, not between the gate electrode layers 120, and thus, the gate electrode layers 120 may be more densely arranged. Thus, the channel density of the power semiconductor device 100b-5 can be significantly increased.

Fig. 57 and 58 are sectional views illustrating power semiconductor devices 100c-5 and 100d-5 according to other embodiments of the present disclosure.

Referring to fig. 57, the power semiconductor device 100c-5 may include at least one recess 138 in the source contact region 112a of the source region 112, the recess 138 being formed to penetrate the source region 112 and to be recessed in the well region 110. A well contact region 114a may be formed on at least a bottom surface of the groove 138 so as to contact the well region 110.

Referring to fig. 58, instead of the channel region 110a of the power semiconductor device 100b-5 of fig. 53 to 56, the power semiconductor device 100d-5 may include a channel region 107b forming an accumulation channel. The above structure of the power semiconductor device 100d-5 including the channel region 107b can be described with reference to fig. 52.

Thus, the power semiconductor device 100d-5 may correspond to the following structure: wherein the power semiconductor devices 100a-5 of fig. 52 are connected in plurality and with well regions 110, source regions 112, source contact regions 112a and well contact regions 114 disposed therebetween.

Fig. 59 to 61 are schematic perspective views illustrating a method of manufacturing the power semiconductor device 100-5 according to an embodiment of the present disclosure.

Referring to fig. 59, a drift region 107 having a first conductive type may be formed in a semiconductor layer 105 of silicon carbide (SiC). For example, the drift region 107 may be formed on the drain region 102 having the first conductivity type. In some embodiments, drain region 102 may be implemented with a substrate of a first conductivity type, and drift region 107 may be formed in one or more epitaxial layers on the substrate.

Next, a well region 110 having the second conductive type may be formed in the semiconductor layer 105 so as to be in contact with the drift region 107. For example, the formation of the well region 110 may be performed by implanting impurities of the second conductivity type in the semiconductor layer 105.

Next, under the well region 110, a deep well region 111 having the second conductivity type may be formed in contact with the well region 110 and the drift region 107. The deep well region 111 may be formed by implanting impurities of the same second conductivity type as the well region 110. Well region 110 and deep well region 111 may be formed in any order.

Alternatively, a heat treatment process for activating or diffusing impurities may be performed after the ion implantation.

Referring to fig. 60, at least one trench 116 may be formed to be recessed from a surface of the semiconductor layer 105 into the semiconductor layer 105 to a given depth.

For example, the trench 116 may extend across the drift region 107 in one direction and may be formed shallower than the well region 110.

For example, the trench 116 may be formed by forming a photomask using photolithography and then etching the semiconductor layer 105 by using the photomask as an etching protective layer.

Referring to fig. 61, a gate insulating layer 118 may be formed on the bottom and inner walls of the trench 116. For example, the gate insulating layer 118 may be formed by oxidizing the semiconductor layer 105 to form an oxide or by depositing an insulating material such as an oxide or a nitride on the semiconductor layer 105.

Next, a gate electrode layer 120 may be formed on the gate insulating layer 118 to bury the trench 116. For example, the gate electrode layer 120 may be formed by forming a conductive layer on the gate insulating layer 118 and patterning the conductive layer. The gate electrode layer 120 may be formed by doping impurities in polysilicon or may be formed to include a conductive metal or a metal silicide.

Next, an interlayer insulating layer 130 may be formed on the gate electrode layer 120.

Meanwhile, the power semiconductor device 100a-5 in fig. 52 may be manufactured by adding some processes to the manufacturing method of the above-described power semiconductor device 100-5 or changing or modifying the manufacturing method. For example, the channel region 107b may be formed with a portion of the drift region 107 so as to form an accumulation channel.

The power semiconductor device 100b-5 of fig. 53 to 56 can be manufactured by adding some processes to the manufacturing method of the above-described power semiconductor device 100-5 or changing or modifying the manufacturing method.

For example, when manufacturing the power semiconductor device 100b-5, forming the source region 112 may include forming a source contact region 112a connected to the source electrode layer 140 outside at least one end of the gate electrode layer 120. In some embodiments, the source contact region 112a may be a portion of the source region 112.

When manufacturing the power semiconductor device 100b-5, the trenches 116 may be arranged to be linearly spaced apart from each other in one direction. In addition, the well region 110, the channel region 110a, and the source region 112 may be formed in the semiconductor layer 105 between the trenches 116.

Referring to the description of fig. 57, the method of manufacturing the power semiconductor device 100c-5 may further include: forming at least one recess 138 in the source region 112 to penetrate the source region 112 and to be recessed in the well region 110; a well contact region 114 is formed on a bottom surface of the groove 138 so that the well contact region 114 contacts the well region 110, and a source electrode layer 140 is formed to connect with the well contact region 114.

According to the manufacturing method described above, the power semiconductor device 100-5 using the semiconductor layer 105 of silicon carbide can be economically manufactured by using a process applied to a conventional silicon substrate.

Fig. 62 is a schematic perspective view illustrating a power semiconductor device 100-6 according to an embodiment of the present disclosure. Fig. 63 is a plan view showing the power semiconductor device 100-6 taken along line II-II of fig. 62. Fig. 64 is a sectional view showing the power semiconductor device 100-6 taken along line III-III of fig. 63.

Referring to fig. 62 to 64, the power semiconductor device 100-6 may include at least a semiconductor layer 105, a gate insulating layer 118, and a gate electrode layer 120. For example, the power semiconductor device 100-6 may have a power MOSFET structure.

For example, the semiconductor layer 105 may be formed of silicon carbide (SiC). In more detail, the semiconductor layer 105 may include at least one epitaxial layer of silicon carbide.

Silicon carbide (SiC) may have a wider band gap than silicon and thus may maintain stability even at high temperatures compared to silicon. In addition, since the breakdown electric field of silicon carbide is higher than that of silicon, silicon carbide can stably operate even at high temperatures. Therefore, the power semiconductor device 100-6 including the semiconductor layer 105 formed of silicon carbide can have a high breakdown voltage and can provide excellent heat release characteristics and stable operation characteristics at high temperatures, as compared with the case of using silicon.

For example, well region 110 may be formed to surround at least a portion of drift region 107. As such, drift region 107 may include vertical portion 107a, at least a portion of vertical portion 107a being surrounded by well region 110. In operation of power semiconductor device 100-6, vertical portion 107a may provide a vertical movement path for charge.

The well region 110 is shown in fig. 62 as including two regions spaced apart from each other and a vertical portion 107a interposed therebetween, but the well region 110 may be variously changed or modified. For example, the vertical portion 107a may have a shape whose side is surrounded by the well region 110 at a time.

The channel region 110a may be formed in the semiconductor layer 105 between the drift region 107 and the source region 112. For example, the channel region 110a may have the second conductivity type, and in the operation of the power semiconductor device 100-6, an inversion channel may be formed in the channel region 110a along one direction. One direction may refer to the direction of line III-III of fig. 63.

In some embodiments, the channel region 110a may be a portion of the well region 110. In this case, the channel region 110a may be entirely formed to be continuously connected with the well region 110. The doping concentration of the second conductive type impurity of the channel region 110a may be the same as or may be different from that of the rest of the well region 110 for adjustment of the threshold voltage.

In some embodiments, the well region 110, the channel region 110a, and the source region 112 may be formed to be symmetrical with respect to the vertical portion 107a of the drift region 107. For example, the well region 110, the channel region 110a, and the source region 112 may be formed at opposite ends of the vertical portion 107a of the drift region 107, or each of the well region 110, the channel region 110a, and the source region 112 may include a first portion and a second portion formed to be symmetrical with respect to the vertical portion 107a of the drift region 107. In each of the well region 110, the channel region 110a, and the source region 112, the first portion and the second portion may be separated from each other or may be connected to each other.

At least one trench 116 may be formed to be recessed from the surface of the semiconductor layer 105 into the semiconductor layer 105 to a given depth. The trench 116 may extend in one direction within the semiconductor layer 105. One direction may refer to a length direction of the groove 116 instead of a depth direction of the groove 116, and may refer to a direction of a line III-III of fig. 63.

A gate insulating layer 118 may be formed on the bottom surface and the inner wall of the trench 116. For example, the gate insulating layer 118 may include a first portion 118a formed with a first thickness from the bottom surface of the trench 116 and a second portion 118b formed with a second thickness on the inner wall of the trench 116.

For example, the first portion 118a may be formed to have a first thickness from the bottom surface of the trench 116, thereby partially burying the trench 116. As such, the second portion 118b may be formed substantially on the first portion 118a, and may be formed on a sidewall of the trench 116 without burying the trench 116. Accordingly, the second thickness of the second portion 118b may be less than the first thickness of the first portion 118 a. For example, the first thickness may be 1/5 or more of the depth of the trench 116 and 1/2 or less of the depth of the trench 116, and the second thickness may be in the range of 1/5 to 1/30 of the first thickness.

As described above, by forming the first portion 118a of the gate insulating layer 118 to be thicker than the second portion 118b at the bottom of the trench 116, the electric field concentration on the bottom of the trench 116 in the operation of the power semiconductor device 100-6 can be alleviated.

The drift region 107 may be formed in the semiconductor layer 105 on one side of the gate electrode layer 120. For example, the vertical portion 107a of the drift region 107 may extend vertically in the semiconductor layer 105 on one side of the gate electrode layer 120. The channel region 110a may be formed in the semiconductor layer 105 between the vertical portion 107a of the drift region 107 and the source region 112, on one side of the gate electrode layer 120. Accordingly, the semiconductor layer 105 of one side of the gate electrode layer 120 may include a structure in which the source region 112, the channel region 110a, and the vertical portion 107a of the drift region 107 are connected in one direction.

Well region 110 may be formed deeper than gate electrode layer 120 so as to surround the bottom surface of gate electrode layer 120 at one end of gate electrode layer 120. In addition, well region 110 may be formed deeper than gate electrode layer 120 to surround the bottom surface of gate electrode layer 120 at opposite ends of gate electrode layer 120. In this way, the opposite end portions of the gate electrode layer 120 around the source region 112 may be surrounded by the well region 110.

The well (110) structure may further reduce electric field concentration on the bottom surface of the trench 116 (i.e., below the gate electrode layer 120). Therefore, according to the power semiconductor device 100-6, the well region 110 can be formed deeper than the gate electrode layer 120 without additionally forming a deep well, and thus, the electric field concentration on the bottom surface of the trench 116 can be relieved. The conventional vertical channel structure has a problem in that junction resistance and threshold voltage increase as the distance between the deep well and the trench becomes shorter. However, in the power semiconductor device 100-6 according to the embodiment, this problem may not occur.

In some embodiments, the gate insulating layer 118 and the gate electrode layer 120 may be formed in the trench 116, and furthermore, may be formed to further extend to the outside of the trench 116.

In some embodiments, well region 110 may be formed deeper in semiconductor layer 105 than gate electrode layer 120 so as to contact vertical portion 107a of drift region 107 and surround the bottom surface of gate electrode layer 120 at the opposite end of gate electrode layer 120.

In the above-described power semiconductor device 100-6, the first conductivity type and the second conductivity type may be opposite to each other, and each of the first conductivity type and the second conductivity type may be one of an n-type and a p-type. For example, when the first conductivity type is n-type, the second conductivity type is p-type, and vice versa.

In more detail, when the power semiconductor device 100-6 is an N-type MOSFET, the drift region 107 may be an N-region, the source region 112 and the drain region 102 may be N + regions, and the well region 110 and the channel region 110a may be P-regions.

In operation of the power semiconductor device 100-6, current may generally flow in a vertical direction from the drain region 102 along the vertical portion 107a of the drift region 107, and may then flow through the channel region 110a along the side surface of the gate electrode layer 120 to the source region 112.

In the above-described power semiconductor device 100-6, the gate electrode layer 120 may be densely arranged in parallel in a stripe type or a line type, and the channel region 110a may be disposed on a side surface of the gate electrode layer 120. Thus, the channel density can be increased.

Further, in the power semiconductor device 100-6, since the gate insulating layer 118 is formed thick at the bottom of the trench 116 and the bottom surface of the gate electrode layer 120 is surrounded by the well region 110, a breakdown phenomenon due to concentration of an electric field on the edge of the trench 116 can be mitigated. Therefore, the high withstand voltage characteristics of the power semiconductor device 100-6 can be improved. This may mean that the reliability of the operation of the power semiconductor device 100-6 is improved.

Fig. 65 is a perspective view illustrating power semiconductor devices 100a-6 according to another embodiment of the present disclosure.

The power semiconductor device 100a-6 according to the embodiment may be implemented by using or partially modifying the power semiconductor device 100-6 in fig. 62 to 64. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 65, in the power semiconductor devices 100a-6, a channel region 107b may be formed in the semiconductor layer 105 between the drift region 107 and the source region 112. For example, the channel region 107b may have the first conductivity type. In operation of the power semiconductor devices 100a-6, an accumulation channel may be formed in the channel region 107 b.

In this case, the source region 112, the channel region 107b, and the drift region 107 may be normally electrically connected. However, in the structure of the semiconductor layer 105 of silicon carbide, a potential barrier is formed while the energy band of the channel region 107b is bent upward due to the influence of negative charges generated by the formation of carbon clusters in the gate insulating layer 118. In this manner, an accumulation channel that allows electric charges or current to flow in the channel region 107b only when an operating voltage is applied to the gate electrode layer 120 can be formed.

Therefore, the threshold voltage applied to the gate electrode layer 120 for forming the accumulation channel in the channel region 107b can be much lower than the threshold voltage applied to the gate electrode layer 120 for forming the inversion channel of the channel region 110a of fig. 62 to 64.

The above structure may allow the channel region 107b to be more restricted between the gate electrode layer 120 and the well region 110.

The power semiconductor device 100a-6 can include the advantages of the power semiconductor device 100-6 shown in fig. 62 to 64, and in addition, the threshold voltage can be made low.

Fig. 66 is a schematic perspective view illustrating a power semiconductor device 100b-6 according to another embodiment of the present disclosure. Fig. 67 is a plan view showing the power semiconductor device 100b-6 taken along the line VI-VI of fig. 66. Fig. 68 is a sectional view showing the power semiconductor device 100b-6 taken along a line VII-VII of fig. 67. Fig. 69 is a sectional view showing the power semiconductor device 100b-6 taken along the line VIII-VIII of fig. 67.

The power semiconductor device 100b-6 according to the embodiment may be implemented by using or partially modifying the power semiconductor device 100-6 in fig. 62 to 64. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 66 to 69, in the power semiconductor device 100b-6, the source region 112 may include a source contact region 112a outside at least one end of the gate electrode layer 120. For example, the source contact region 112a, which is a portion of the source region 112, may refer to a portion connected to the source electrode layer 140.

The source electrode layer 140 may be commonly connected with the source contact region 112a and the well contact region 114.

One example is shown in fig. 66 to 69, a source contact region 112a and a well contact region 114 are formed in the source region 112 on one side of the vertical portion 107a of the drift region 107. However, when each of the source region 112 and the well region 110 is divided into a plurality of regions, each of the source contact region 112a and the well contact region 114 may be formed in each corresponding region.

In some embodiments, the plurality of grooves 116 may be arranged to be linearly spaced apart from each other along one direction. As such, the gate electrode layers 120 may also be arranged to be linearly spaced apart from each other in the one direction along the trench 116. In this case, the well region 110, the source region 112, the source contact region 112a, and the well contact region 114 may be formed in the semiconductor layer 105 between the trenches 116 arranged to be linearly spaced apart from each other in the one direction.

For example, the power semiconductor device 100b-6 may be formed by arranging a plurality of the structures of the power semiconductor device 100-6 in fig. 62 to 64 in one direction, and by disposing the well region 110, the source region 112, the source contact region 112a, and the well contact region 114 therebetween.

For example, when the power semiconductor device 100-6 is an N-type MOSFET, the source contact region 112a may be an N + region and the well contact region 114 may be a P + region.

According to the power semiconductor device 100b-6, the source contact region 112a and the well contact region 114 may be disposed outside the gate electrode layer 120, not between the gate electrode layer 120, so that the gate electrode layer 120 may be more densely arranged. In this way, the channel density of the power semiconductor devices 100b-6 can be significantly increased.

Fig. 70 and 71 are cross-sectional views illustrating power semiconductor devices 100c-6 and 100d-6 according to other embodiments of the present disclosure.

Referring to fig. 70, the power semiconductor device 100c-6 may include at least one recess 138 in the source contact region 112a of the source region 112, the recess 138 being formed to penetrate the source region 112 and to be recessed in the well region 110. A well contact region 114a may be formed on at least a bottom surface of the groove 138 so as to contact the well region 110.

Referring to fig. 71, a power semiconductor device 100d-6 may include a channel region 107b forming an accumulation channel instead of the channel region 110a of the power semiconductor device 100b-6 of fig. 66 to 69. The structure of the power semiconductor device 100d-6 including the channel region 107b can be described with reference to fig. 65.

Thus, the power semiconductor device 100d-6 may correspond to the following structure: wherein the power semiconductor devices 100a-6 of fig. 65 are in a plurality of connections and a well region 110, a source region 112, a source contact region 112a and a well contact region 114 are arranged therebetween.

Fig. 72 to 74 are schematic perspective views illustrating a method of manufacturing the power semiconductor device 100-6 according to an embodiment of the present disclosure.

Referring to fig. 72, a drift region 107 having a first conductive type may be formed in a semiconductor layer 105 of silicon carbide (SiC). For example, the drift region 107 may be formed on the drain region 102 having the first conductivity type. In some embodiments, drain region 102 may be implemented with a substrate of a first conductivity type, and drift region 107 may be formed in one or more epitaxial layers on the substrate.

Alternatively, a heat treatment process for activating or diffusing impurities may be performed after the ion implantation.

Referring to fig. 73, at least one trench 116 may be formed to be recessed into the semiconductor layer 105 to a given depth from the surface of the semiconductor layer 105.

For example, the trench 116 may extend across the drift region 107 in one direction and may be formed shallower than the well region 110.

For example, the trench 116 may be formed by forming a photomask using photolithography, and then etching the semiconductor layer 105 by using the photomask as an etching protective layer.

Referring to fig. 74, a gate insulating layer 118 may be formed on the bottom and inner walls of the trench 116. For example, the forming of the gate insulating layer 118 may include forming a first portion 118a having a first thickness from a bottom surface of the trench and forming a second portion 118b having a second thickness on an inner wall of the trench 116.

For example, the gate insulating layer 118 may be formed by oxidizing the semiconductor layer 105 to form an oxide or by depositing an insulating material such as an oxide or a nitride on the semiconductor layer 105. In some embodiments, the first portion 118a may be formed by depositing an insulating material, and the second portion 118b may be formed by oxidizing the semiconductor layer 105 or depositing an insulating material.

Next, an interlayer insulating layer 130 may be formed on the gate electrode layer 120.

Meanwhile, the power semiconductor device 100a-6 of fig. 65 can be manufactured by adding some processes to the manufacturing method of the above-described power semiconductor device 100-6 or changing or modifying the manufacturing method. For example, the channel region 107b may be formed with a portion of the drift region 107 to form an accumulation channel.

The power semiconductor device 100b-6 of fig. 66 to 69 may be manufactured by adding some processes to the manufacturing method of the above-described power semiconductor device 100-6 or changing or modifying the manufacturing method.

For example, when manufacturing the power semiconductor device 100b-6, the forming of the source region 112 may include forming a source contact region 112a connected to the source electrode layer 140 outside at least one end of the gate electrode layer 120. In some embodiments, the source contact region 112a may be a portion of the source region 112.

When manufacturing the power semiconductor device 100b-6, the trenches 116 may be arranged to be linearly spaced apart from each other in one direction. In addition, the well region 110, the channel region 110a, and the source region 112 may be formed in the semiconductor layer 105 between the trenches 116.

The method of manufacturing the power semiconductor device 100c-6 described with reference to fig. 70 may further include: forming at least one recess 138 in the source region 112 to penetrate the source region 112 and to be recessed in the well region 110; a well contact region 114 is formed on a bottom surface of the groove 138 to contact the well region 110, and a source electrode layer 140 is formed to connect with the well contact region 114.

According to the manufacturing method described above, the power semiconductor device 100-6 using the semiconductor layer 105 of silicon carbide can be economically manufactured by using a process applied to a conventional silicon substrate.

Fig. 75 is a schematic perspective view illustrating a power semiconductor device 100-7 according to an embodiment of the present disclosure. Fig. 76 is a plan view showing the power semiconductor device 100-7 taken along line II-II of fig. 75. Fig. 77 is a sectional view showing the power semiconductor device 100-7 taken along the line III-III of fig. 76. Fig. 78 is a sectional view showing the power semiconductor device 100-7 taken along line IV-IV of fig. 76.

Referring to fig. 75 to 78, the power semiconductor device 100-7 may include at least a semiconductor layer 105, a gate insulating layer 118, and a gate electrode layer 120. For example, the power semiconductor device 100-7 may have a power MOSFET structure.

For example, the semiconductor layer 105 may be formed of silicon carbide (SiC). In more detail, the semiconductor layer 105 may include at least one epitaxial layer of silicon carbide.

Silicon carbide (SiC) can have a wider band gap than silicon and therefore can maintain stability than silicon even at high temperatures. In addition, since the breakdown electric field of silicon carbide is higher than that of silicon, silicon carbide can stably operate even at high temperatures. Therefore, the power semiconductor device 100-7 including the semiconductor layer 105 formed of silicon carbide can have a high breakdown voltage and can provide excellent heat release characteristics and stable operation characteristics at high temperatures, as compared with the case of using silicon.

In more detail, the semiconductor layer 105 may include a drift region 107. The drift region 107 may have the first conductive type, and may be formed by implanting impurities of the first conductive type into a portion of the semiconductor layer 105. For example, the drift region 107 may be formed by doping impurities of the first conductivity type in an epitaxial layer of silicon carbide.

For example, well region 110 may be formed to surround at least a portion of drift region 107. In more detail, the well region 110 may include a vertical portion 107a vertically extending in the semiconductor layer 105 at one side of the gate electrode layer 120. For example, at least a portion of vertical portion 107a of drift region 107 can include vertical portion 107a, which vertical portion 107a can be surrounded and confined by well region 110. In operation of the power semiconductor device 100-7, the vertical portion 107a may provide a vertical motion path for charge.

The well region 110 shown in fig. 75 is a region including two regions spaced apart from each other and a vertical portion 107a interposed therebetween, but the well region 110 may be variously changed or modified. For example, the vertical portion 107a may have a shape whose side is surrounded by the well region 110 at a time.

The channel region 107b may be formed in the semiconductor layer 105 between the drift region 107 and the source region 112. For example, the channel region 107b may have the first conductivity type, and in operation of the power semiconductor device 100-7, an accumulation channel may be formed in the channel region 107 b.

In this case, the source region 112, the channel region 107b, and the drift region 107 may be normally electrically connected. However, in the structure of the semiconductor layer 105 of silicon carbide, a potential barrier is formed while the energy band of the channel region 107b is bent upward due to the influence of negative charges generated by the formation of carbon clusters in the gate insulating layer 118. In this manner, an accumulation channel that allows electric charges or current to flow in the channel region 107b only when an operating voltage is applied to the gate electrode layer 120 can be formed.

In this case, the drift region 107 may be connected with the source region 112 through the channel region 107 b. That is, in the channel region (107b) portion, the drift region 107 and the source region 112 may contact each other.

For example, the doping concentration of the first conductive type impurity of the channel region 107b may be the same as or may be different from that of the remaining portion of the drift region 107 for adjustment of the threshold voltage.

In some embodiments, the well region 110, the channel region 107b, and the source region 112 may be formed to be symmetrical with respect to the vertical portion 107a of the drift region 107. The well region 110, the channel region 107b, and the source region 112 may be formed in the semiconductor layer 105 on opposite sides of the vertical portion 107a, or each of the well region 110, the channel region 107b, and the source region 112 may include a first portion and a second portion formed to be symmetrical with respect to the vertical portion 107 a. In each of the well region 110, the channel region 107b, and the source region 112, the first portion and the second portion may be separated from each other or may be connected to each other.

At least one trench 116 may be formed to be recessed from the surface of the semiconductor layer 105 into the semiconductor layer 105 to a given depth. The trench 116 may extend in one direction within the semiconductor layer 105. One direction may refer to a length direction of the groove 116 instead of a depth direction of the groove 116, and may refer to a direction of a line III-III or a line IV-IV of fig. 76.

A gate insulating layer 118 may be formed at least on an inner wall of the trench 116. For example, the gate insulating layer 118 may include an insulating material such as silicon oxide, silicon carbide, silicon nitride, hafnium oxide, zirconium oxide, or aluminum oxide, or may include a stacked structure thereof. The thickness of the gate insulating layer 118 may be uniform, or a portion of the gate insulating layer 118 formed on the bottom surface of the trench 116 may be thicker than a portion of the gate insulating layer 118 formed on the sidewall of the trench 116, so that the electric field is reduced at the bottom of the trench 116.

This structure can alleviate concentration of an electric field on the bottom surface of the trench 116, i.e., at the lower portion of the gate electrode layer 120. Therefore, in the power semiconductor device 100-7 according to the embodiment, the well region 110 may be formed deeper than the gate electrode layer 120 without additionally forming a deep well, and thus the electric field concentration on the bottom surface of the trench 116 may be relieved. The conventional vertical channel structure has a problem in that junction resistance and threshold voltage increase as the distance between the deep well and the trench becomes shorter. However, this problem may not occur in the power semiconductor device 100-7 according to the embodiment.

The channel region 107b may be formed in the semiconductor layer 105 between the vertical portion 107a of the drift region 107 and the source region 112, on one side of the gate electrode layer 120. Accordingly, the semiconductor layer 105 of one side of the gate electrode layer 120 may include a structure in which the source region 112, the channel region 107b, and the vertical portion 107a of the drift region 107 are connected in one direction.

The above-described structure of the channel region 107b may be referred to as a "lateral channel structure" because the channel region 110a is formed along the sidewall of the gate electrode layer 120.

In addition, a channel region 107b may be formed in the semiconductor layer 105 between the vertical portion 107a of the drift region 107 and the source region 112 on the opposite side of the gate electrode layer 120. In the above embodiments, the channel region 107b may be a portion of the vertical portion 107a of the drift region 107.

In some embodiments, the gate insulating layer 118 and the gate electrode layer 120 may be formed in the trench 116, and furthermore, may be formed to further extend to the outside of the trench 116.

In addition, the gate insulating layer 118 and the gate electrode layer 120 may further extend to the outside of the trench 116, and thus may be widely formed on the semiconductor layer 105 across the trench 116.

In addition, well region 110 may extend across gate electrode layer 120. The vertical portion 107a of the drift region 107 may be arranged in the semiconductor layer 105 between the gate electrode layers 120. The channel region 107b may be formed in the semiconductor layer 105 between the source region 112 and the vertical portion 107a of the drift region 107 on one side or the opposite side of each gate electrode layer 120.

In some embodiments, source region 112 may be connected across gate electrode layer 120 while surrounding an end of gate electrode layer 120.

In the above-described power semiconductor device 100-7, the first conductivity type and the second conductivity type may be opposite to each other, and each of the first conductivity type and the second conductivity type may be one of an n-type and a p-type. For example, when the first conductivity type is n-type, the second conductivity type is p-type, and vice versa.

In more detail, when the power semiconductor device 100-7 is an N-type MOSFET, the drift region 107 and the channel region 107b may be N-regions, and the source region 112 and the drain 102 may be N + regions. Well region 110 may be a P-region.

In operation of the power semiconductor device 100-7, current may generally flow in a vertical direction from the drain region 102 along the vertical portion 107a of the drift region 107 and may then flow through the channel region 107b along the side surface of the gate electrode layer 120 to the source region 112.

In the above-described power semiconductor device 100-7, the gate electrode layers 120 may be densely arranged in parallel in a stripe shape, and the channel regions 110a may be arranged on the side surfaces of the gate electrode layers 120. Thus, the channel density may increase.

Further, in the power semiconductor device 100-7, since the bottom surface of the gate electrode layer 120 is surrounded by the well region 110, a breakdown phenomenon due to concentration of an electric field on the edge of the trench 116 may be mitigated. Therefore, the high withstand voltage characteristics of the power semiconductor device 100-7 can be improved. This may mean that the reliability of the operation of the power semiconductor device 100-7 is improved.

Fig. 79 is a schematic perspective view illustrating power semiconductor devices 100a-7 according to another embodiment of the present disclosure. Fig. 80 is a plan view showing the power semiconductor devices 100a-7 taken along the line VI-VI of fig. 79. Fig. 81 is a cross-sectional view showing the power semiconductor device 100a-7 taken along line VII-VII of fig. 80. Fig. 82 is a cross-sectional view illustrating the power semiconductor devices 100a-7 taken along line VIII-VIII of fig. 80.

The power semiconductor device 100a-7 according to the embodiment may be implemented by using or partially modifying the power semiconductor device 100-7 in fig. 75 to 78. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 79 to 82, the source region 112 may include a source contact region 112a connected to the source electrode layer 140 at an outer side of at least one end of the gate electrode layer 120. For example, the source contact region 112a, which is a portion of the source region 112, may refer to a portion connected to the source electrode layer 140.

For example, the well contact region 114 may be connected to the source electrode layer 140, and may be doped with impurities of the second conductive type at a higher concentration than the well region 110 to reduce contact resistance when connected to the source electrode layer 140.

In the examples shown in fig. 79 to 82, the source contact region 112a and the well contact region 114 are formed in the source region 112 on one side of the vertical portion 107a of the drift region 107. However, the source contact region 112a and the well contact region 114 may be formed at opposite sides of each vertical portion 107a of the drift region 107. Alternatively, when each of the source region 112 and the well region 110 is divided into a plurality of regions, each of the source contact region 112a and the well contact region 114 may be formed in each corresponding region.

In some embodiments, the plurality of grooves 116 may be arranged to be linearly spaced apart from each other along one direction. As such, the gate electrode layers 120 may also be arranged to be linearly spaced apart from each other in the one direction along the trench 116. In this case, the well region 110 and the source region 112 may be formed in the semiconductor layer 105 such that the well region 110 and the source region 112 are located between the plurality of trenches 116 arranged to be linearly spaced apart from each other along the one direction.

For example, the structure of the power semiconductor device 100-7 shown in fig. 75 to 77 may be arranged in plural in one direction, and the well region 110, the source region 112, the source contact region 112a, and the well contact region 114 may be formed therebetween.

For example, when the power semiconductor device 100-7 is an N-type MOSFET, the source contact region 112a may be an N + region and the well contact region 114 may be a P + region.

In the power semiconductor device 100a-7 according to the embodiment, the source contact region 112a and the well contact region 114 may be disposed outside the gate electrode layer 120, not between the gate electrode layer 120, and thus, the gate electrode layer 120 may be more densely disposed. In this way, the channel density of the power semiconductor devices 100a-7 may be significantly increased.

Further, according to the power semiconductor devices 100a to 7, since the threshold voltage is lowered by using the channel region 107b formed with the accumulation channel and the breakdown phenomenon due to the concentration of the electric field on the edge of the trench 116 is alleviated, the high withstand voltage characteristics of the power semiconductor devices 100a to 7 are improved. This may mean that the reliability of the operation of the power semiconductor devices 100a-7 is improved.

Fig. 83 to 86 are sectional views illustrating power semiconductor devices 100b-7, 100c-7, 100d-7, and 100e-7 according to other embodiments of the present disclosure. Each of the power semiconductor devices 100b-7, 100c-7, 100d-7, and 100e-7 can be realized by modifying a partial configuration of the power semiconductor device 100-7 or 100a-7 in fig. 75 to 82, and therefore, additional description will be omitted to avoid repetition.

Referring to fig. 83, in the power semiconductor device 100b-7, the well region 110 may protrude farther toward the vertical portion 107a of the drift region 107 than a portion of the source region 112.

Channel region 107b1 may be formed in semiconductor layer 105 on the protruding portion of well region 110. For example, the vertical portion 107a of the drift region 107 may further extend to a protruding groove portion formed as the well region 110 between the well region 110 and the gate electrode layer 120, and the channel region 107b1 may be formed on the vertical portion 107 a. The above structure can make the channel region 107b1 more confined between the gate electrode layer 120 and the well region 110.

Referring to fig. 84, in the power semiconductor device 100c-7, the well region 110 may protrude farther toward the vertical portion 107a of the drift region 107 than a portion of the source region 112, and further, the well region 110 may include a tap portion extending toward the gate electrode layer 120 at an end thereof. For example, the well region 110 may protrude farther toward the vertical portion 107a of the drift region 107 than a portion of the source region 112, and may include a tap portion of an end thereof.

Channel region 107b2 may be formed in semiconductor layer 105 on the protruding portion of well region 110. For example, the channel region 107b2 may be formed in a curved shape on the protruding portion and the tap portion of the well region 110. The above structure can make the channel region 107b2 more confined between the gate electrode layer 120 and the well region 110.

Referring to fig. 85, in the power semiconductor device 100d-7, the well region 110 may protrude farther toward the vertical portion 107a of the drift region 107 than a portion of the source region 112, and further, the well region 110 may include a tap portion extending toward the gate electrode layer 120 at an end thereof. For example, the well region 110 may protrude farther toward the vertical portion 107a of the drift region 107 than a portion of the source region 112, and may include a tap portion at an end thereof. In addition, the vertical portion 107a of the drift region 107 may further extend between the lower portion of the source region 112 and the well region 110.

The channel region 107b3 may be formed to further extend between the lower portion of the source region 112 and the well region 110. For example, the channel region 107b3 may be formed in a curved shape from a tap portion of the well region 110 to a lower portion of the source region 112. This structure can widen the contact area between the channel region 107b3 and the source region 112.

Referring to fig. 86, the power semiconductor device 100e-7 may include at least one recess 138 in the source contact region 112a of the source region 112, the recess 138 being formed to penetrate the source region 112 and to be recessed into the well region 110. The contact region 114a may be formed on at least a bottom surface of the recess 138 so as to contact the well region 110.

The source electrode layer 140a may be formed to fill the groove 138, and thus the source electrode layer 140a may be connected with the well contact region 114a, the well region 110, and/or the source region 112. The above structure can widen the contact area between the source electrode layer 140a and the well region 110 and the source region 112, so that the contact resistance therebetween is reduced.

Fig. 87 to 89 are schematic perspective views illustrating a method of manufacturing the power semiconductor devices 100a-7 according to an embodiment of the present disclosure.

Referring to fig. 87, a drift region 107 having a first conductive type may be formed in a semiconductor layer 105 of silicon carbide (SiC). For example, the drift region 107 may be formed on the drain region 102 having the first conductivity type. In some embodiments, drain region 102 may be implemented with a substrate of a first conductivity type, and drift region 107 may be formed in one or more epitaxial layers on the substrate.

Next, a well region 110 having the second conductivity type may be formed in the semiconductor layer 105 so as to be in contact with at least a portion of the drift region 107. For example, the formation of the well region 110 may be performed by implanting impurities having the second conductivity type in the semiconductor layer 105.

In addition to the formation of the source region 112, at least one channel region 107b having the second conductivity type, in which an accumulation channel is formed in one direction, may be formed in the semiconductor layer 105 between the source region 112 and the drift region 107. For example, the channel region 107b may be formed between the source region 112 and the vertical portion 107a of the drift region 107.

For example, when the channel region 107b is a part of the drift region 107, the source region 112 may be formed to contact the drift region 107 through the channel region 107 b.

Alternatively, a heat treatment process for activating or diffusing impurities may be performed after the ion implantation.

Referring to fig. 88, at least one trench 116 may be formed to be recessed into the semiconductor layer 105 to a given depth from the surface of the semiconductor layer 105.

For example, the trench 116 may extend across the drift region 107 in one direction and may be formed shallower than the well region 110.

In addition, a plurality of trenches 116 may be formed in the semiconductor layer 105 in parallel in one direction.

For example, the trench 116 may be formed by forming a photomask using photolithography, and then etching the semiconductor layer 105 by using the photomask as an etching protective layer.

Referring to fig. 89, a gate insulating layer 118 may be formed at least on an inner wall of the trench 116. For example, the gate insulating layer 118 may be formed by oxidizing the semiconductor layer 105 to form an oxide or by depositing an insulating material such as an oxide or a nitride over the semiconductor layer 105.

For example, the gate insulating layer 118 and the gate electrode layer 120 may be formed to further protrude to the outside of the trench 116. In addition, the gate insulating layer 118 and the gate electrode layer 120 may be widely formed on the semiconductor layer 105 covering the trench 116.

In this way, well region 110 may be arranged deeper than gate electrode layer 120 so as to surround the bottom surface of gate electrode layer 120 at least at one end of gate electrode layer 120, and channel region 107b may be formed in semiconductor layer 105 between drift region 107 and source region 112, on one side or the opposite side of gate electrode layer 120.

In addition, an interlayer insulating layer 130 may be formed on the gate electrode layer 120.

Meanwhile, the power semiconductor devices 100a-7 shown in fig. 79 to 82 may be manufactured by adding some processes to the manufacturing method of the above-described power semiconductor device 100-7 or changing or modifying the manufacturing method.

For example, when manufacturing the power semiconductor devices 100a-7, the forming of the source region 112 may include forming a source contact region 112a connected to the source electrode layer 140 outside at least one end of the gate electrode layer 120. In some embodiments, the source contact region 112a may not be distinguished from the source region 112.

In addition, the well contact region 114 may be formed in the source contact region 112a before the trench 116 is formed. For example, the well contact region 114 may be formed by implanting second conductive type impurities having a higher concentration than the well region 110 into a portion of the well region 110.

The trenches 116 may be arranged linearly spaced apart from each other in one direction when manufacturing the power semiconductor devices 100 a-7. In addition, the well region 110, the channel region 107b, and the source region 112 may be formed in the semiconductor layer 105 between the trenches 116.

According to the manufacturing method described above, the power semiconductor device 100-7 using the semiconductor layer 105 of silicon carbide can be economically manufactured by using a process applied to a conventional silicon substrate.

Fig. 90 is a schematic perspective view illustrating a power semiconductor device 100-8 according to an embodiment of the present disclosure. Fig. 91 is a plan view showing the power semiconductor device 100-8 taken along line II-II of fig. 90. Fig. 92 is a sectional view showing the power semiconductor device 100-8 taken along the line III-III of fig. 91.

Referring to fig. 90 to 92, the power semiconductor device 100-8 may include at least a semiconductor layer 105, a gate insulating layer 118, and a gate electrode layer 120. For example, the power semiconductor device 100-8 may have a power MOSFET structure.

For example, the semiconductor layer 105 may be formed of silicon carbide (SiC). In more detail, the semiconductor layer 105 may include at least one epitaxial layer of silicon carbide.

Silicon carbide (SiC) can have a wider band gap than silicon and therefore can maintain stability than silicon even at high temperatures. In addition, since the breakdown electric field of silicon carbide is higher than that of silicon, silicon carbide can stably operate even at high temperatures. Therefore, the power semiconductor device 100-8 including the semiconductor layer 105 formed of silicon carbide can have a high breakdown voltage and can provide excellent heat release characteristics and stable operation characteristics at high temperatures, as compared with the case of using silicon.

In more detail, the semiconductor layer 105 may include a drift region 107. The drift region 107 may have the first conductive type, and may be formed by implanting impurities of the first conductive type into a portion of the semiconductor layer 105. For example, the drift region 107 may be formed by doping impurities of the first conductivity type in an epitaxial layer of silicon carbide.

The source region 112 may be formed on the well region 110 or in the well region 110 and may have the first conductivity type. For example, the source region 112 may be formed by doping impurities of the first conductive type in the well region 110. The concentration of the first conductive type impurity doped in the source region 112 may be higher than that doped in the drift region 107.

At least one trench 116 may be formed to be recessed from the surface of the semiconductor layer 105 into the semiconductor layer 105 to a given depth. The trench 116 may extend in one direction within the semiconductor layer 105. One direction may refer to a length direction of the groove 116 instead of a depth direction of the groove 116, and may refer to a direction of a line III-III of fig. 91.

In some embodiments, drift region 107 may be formed in semiconductor layer 105 under gate electrode layer 120. In semiconductor layer 105 on drift region 107, well region 110 may be formed deeper than gate electrode layer 120 to surround at least opposite sidewalls and a bottom edge of gate electrode layer 120.

The junction resistance reduction region 108 may be formed in the semiconductor layer 105 so as to be connected to the drift region 107 below the bottom surface of the gate electrode layer 120. The junction resistance reduction region 108 may have the first conductive type and may be formed by implanting impurities of the first conductive type into the semiconductor layer 105.

In some embodiments, well region 110 may be formed to surround the sidewalls and bottom surface of gate electrode layer 120, and junction resistance reduction region 108 may be formed between the bottom surface of gate electrode layer 120 and drift region 107 to penetrate well region 110. In this case, the junction resistance reduction region 108 may be formed by doping impurities of the first conductivity type in the well region 110.

The well (110) structure may more alleviate electric field concentration at the bottom surface of the trench 116, i.e., at the lower end edge of the gate electrode layer 120. The above structure can increase the electric field margin covering the gate insulating layer 118 of the power semiconductor device 100-8, and therefore, the reliability of the operation of the power semiconductor device 100-8 can be improved.

The channel region 110a may be formed in the semiconductor layer 105 between the junction resistance reduction region 108 and the source region 112. For example, a channel region 110a may be formed in the semiconductor layer 105 between the junction resistance reduction region 108 and the source region 112 along a sidewall of the gate electrode layer 120. For example, the channel region 110a may have the second conductivity type, and in the operation of the power semiconductor device 100-8, an inversion channel may be formed in the channel region 110a along one direction.

The doping concentration of the first conductive-type impurity of the junction resistance reduction region 108 may be equal to or higher than that of the drift region 107. In some embodiments, the doping concentration of the first conductive-type impurity of the junction resistance reduction region 108 may be higher than that of the drift region 107, so that the junction resistance is reduced. In this case, since the junction resistance reduction region 108 having a resistance smaller than that of the drift region 107 is joined together with the channel region 110a, the junction resistance can be reduced.

In addition, the doping concentration of the first conductive-type impurity of the junction resistance reduction region 108 may be equal to or lower than the doping concentration of the first conductive-type impurity of the source region 112 and the drain region 102.

In some embodiments, the gate insulating layer 118 and the gate electrode layer 120 may be formed in the trench 116, and furthermore, may be formed to further extend to the outside of the trench 116.

In this case, a plurality of gate electrode layers 120 may be formed on the gate insulating layer 118 to fill the inside of the trench 116. In this way, the gate electrode layer 120 of a trench type may be formed in the semiconductor layer 105, and the gate electrode layer 120 may be arranged to extend in parallel in the one direction like the trench 116.

In the above-described power semiconductor device 100-8, the first conductivity type and the second conductivity type may be opposite to each other, and each of the first conductivity type and the second conductivity type may be one of an n-type and a p-type. For example, when the first conductivity type is n-type, the second conductivity type is p-type, and vice versa.

In more detail, when the power semiconductor device 100-8 is an N-type MOSFET, the drift region 107 may be an N-region, the junction resistance reduction region 108 may be an N-region, the source region 112 and the drain region 102 may be N + regions, and the well region 110 and the channel region 110a may be P-regions.

In operation of the power semiconductor device 100-8, current may flow generally in a vertical direction from the drain region 102 to the drift region 107 and the reduced junction resistance region 108, and may then flow along the sidewalls of the gate electrode layer 120 on which the channel region is formed to the source region 112.

In the above-described power semiconductor device 100-8, the gate electrode layers 120 in the trenches 116 may be densely arranged in parallel in a stripe type or a line type, and the channel regions may be disposed on the side faces of the gate electrode layers 120. Thus, the channel density can be increased.

Fig. 93 is a perspective view illustrating power semiconductor devices 100a-8 according to another embodiment of the present disclosure. The power semiconductor device 100a-8 according to the embodiment may be implemented by using or partially modifying the power semiconductor device 100-8 in fig. 90 to 92. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 93, in the power semiconductor devices 100a-8, the source region 112 may be continuously formed along the extending direction of the gate electrode layer 120. For example, the source region 112 may be widely formed to surround an upper region of the gate electrode layer 120. As described above, when the source region 112 is widely formed, a charge moving path from the drain region 102 to the source region 112 may be widened.

Fig. 94 is a schematic perspective view illustrating a power semiconductor device 100b-8 according to another embodiment of the present disclosure. Fig. 95 is a plan view showing the power semiconductor device 100b-8 taken along the line VI-VI of fig. 94. Fig. 96 is a sectional view showing the power semiconductor device 100b-8 taken along the line VII-VII of fig. 95. Fig. 97 is a sectional view showing the power semiconductor device 100b-8 taken along line VIII-VIII of fig. 95.

The power semiconductor device 100b-8 according to the embodiment may be implemented by using or partially modifying the power semiconductor device 100-8 of fig. 90 to 92. Therefore, additional description will be omitted to avoid redundancy.

Referring to fig. 94 to 97, in the power semiconductor device 100b-8, the source region 112 may include a source contact region 112a outside at least one end of the gate electrode layer 120. For example, the source contact region 112a, which is a portion of the source region 112, may refer to a portion connected to the source electrode layer 140.

The source electrode layer 140 may be commonly connected with the source contact region 112a and the well contact region 114.

In some embodiments, the plurality of grooves 116 may be arranged to be linearly spaced apart from each other along one direction. As such, the gate electrode layers 120 may also be arranged to be linearly spaced apart from each other in the one direction along the trench 116. In this case, the well region 110, the source region 112, the source contact region 112a, and the well contact region 114 may be formed in the semiconductor layer 105 between the trenches 116 arranged to be linearly spaced apart from each other in the one direction.

For example, the power semiconductor device 100b-8 may be formed by arranging a plurality of the structures of the power semiconductor device 100-8 in fig. 90 to 92 along one direction and by arranging the well region 110, the source region 112, the source contact region 112a, and the well contact region 114 therebetween.

For example, when the power semiconductor device 100-8 is an N-type MOSFET, the source contact region 112a may be an N + region and the well contact region 114 may be a P + region.

According to the power semiconductor device 100b-8, the source contact region 112a and the well contact region 114 may be disposed outside the gate electrode layer 120, not between the gate electrode layer 120, so that the gate electrode layer 120 may be more densely arranged. In this way, the channel density of the power semiconductor devices 100b-8 can be significantly increased.

Fig. 98 is a cross-sectional view illustrating a power semiconductor device 100c-8 according to another embodiment of the present disclosure. The power semiconductor device 100c-8 can be realized by modifying a partial configuration of the power semiconductor device 100b-8 in fig. 94 to 97. Therefore, additional description will be omitted to avoid redundancy because they may be referred to each other.

Referring to fig. 98, the power semiconductor device 100c-8 may include at least one recess 138 in the source contact region 112a of the source region 112, the recess 138 being formed to penetrate the source region 112 and to be recessed in the well region 110. A well contact region 114a may be formed on at least a bottom surface of the groove 138 to contact the well region 110.

A source electrode layer 140a may be formed to fill the groove 138, and the source electrode layer 140a may be connected with the well contact region 114a, the well region 110, and/or the source region 112. The above structure can widen the contact area between the source electrode layer 140a and the well region 110 and the contact area between the source electrode layer 140a and the source region 112, so that the contact resistance therebetween is reduced.

In some embodiments, the well contact region 114a may be formed on the entire surface of the well region 110 exposed by the recess 138. Accordingly, the well contact region 114a may be formed on the well region 110 exposed from the bottom surface and the sidewalls of the recess 138. The above-described structure of the well contact region 114a may allow the contact resistance between the source electrode layer 140a and the well region 110 to be further reduced.

Fig. 99 is a cross-sectional view illustrating a power semiconductor device 100d-8 according to another embodiment of the present disclosure. The power semiconductor device 100d-8 can be realized by modifying a partial configuration of the power semiconductor device 100b-8 in fig. 94 to 97. Therefore, additional description will be omitted to avoid redundancy because they may be referred to each other.

Referring to fig. 99, in the power semiconductor device 100d-8, the source region 112 may be formed to be continuous along the extending direction of the gate electrode layer 120. For example, the source region 112 may extend along an upper portion of the gate electrode layer 120, and furthermore, may extend farther between the gate electrode layers 120 arranged in a line.

The source region 112 may be widely formed to surround an upper region of the gate electrode layer 120. As described above, when the source region 112 is widely formed, a charge moving path from the drain region 102 to the source region 112 can be widened.

As described above, according to the embodiments of the present disclosure, the power semiconductor device and the method of manufacturing the same may alleviate concentration of an electric field and may increase channel density, thereby improving the degree of integration.

Of course, these effects are exemplary, and the scope of the present invention is not limited by these effects.

Hereinbefore, although the present disclosure has been described with reference to the exemplary embodiments and the accompanying drawings, the present disclosure is not limited thereto, and those skilled in the art to which the present disclosure pertains may make various modifications and changes without departing from the spirit and scope of the present disclosure.

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Power semiconductor device and method for manufacturing the same

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