阅读说明：本技术 Igbt器件 (IGBT device ) 是由 龚轶 王睿 刘伟 袁愿林 王鑫 于 2019-11-27 设计创作，主要内容包括：本申请提供的一种IGBT器件,包括位于n型漂移区(21)顶部的p型体区(22),位于所述p型体区(22)内的第一n型发射极区(23)；位于所述p型体区(22)之上的第一栅极结构,所述第一栅极结构包括第一栅介质层(24)以及位于所述第一栅介质层(24)之上的第一栅极(26)和n型浮栅(25),且在横向上,所述n型浮栅(25)位于靠近所述n型漂移区(21)的一侧,所述第一栅极(26)位于靠近所述第一n型发射极区(23)的一侧并延伸至所述n型浮栅(25)之上,介于所述n型浮栅(25)和所述第一栅极(26)之间的绝缘介质层(27)；位于所述第一栅介质层(24)中的一个开口(28),所述n型浮栅(25)通过所述开口(28)与所述p型体区(22)接触形成p-n结二极管。(The IGBT device comprises a p-type body region (22) located on the top of an n-type drift region (21), a first n-type emitter region (23) located in the p-type body region (22); a first gate structure over the p-type body region (22), the first gate structure comprising a first gate dielectric layer (24) and a first gate electrode (26) and an n-type floating gate (25) over the first gate dielectric layer (24), and laterally the n-type floating gate (25) is located near one side of the n-type drift region (21), the first gate electrode (26) is located near one side of the first n-type emitter region (23) and extends over the n-type floating gate (25), an insulating dielectric layer (27) between the n-type floating gate (25) and the first gate electrode (26); an opening (28) in the first gate dielectric layer (24), the n-type floating gate (25) contacting the p-type body region (22) through the opening (28) to form a p-n junction diode.)

An IGBT device comprising:

an n-type collector region and a p-type collector region, an n-type drift region located above the n-type collector region and the p-type collector region, a plurality of p-type body regions located on top of the n-type drift region, and at least one first MOSFET cell and at least one second MOSFET cell;

the first MOSFET cell includes: a first n-type emitter region located within the p-type body region; the first grid structure is positioned above the p-type body region, the first grid structure comprises a first grid dielectric layer, a first grid and an n-type floating grid, the first grid and the n-type floating grid are positioned above the first grid dielectric layer, in the transverse direction, the n-type floating grid is positioned on one side close to the n-type drift region, the first grid is positioned on one side close to the first n-type emitter region and extends to the position above the n-type floating grid, and an insulating dielectric layer is arranged between the n-type floating grid and the first grid; an opening in the first gate dielectric layer, through which the n-type floating gate contacts the p-type body region to form a p-n junction diode;

the second MOSFET cell includes: a second n-type emitter region within the p-type body region, a second gate structure for controlling on and off of a current channel between the second n-type emitter region and the n-type drift region, the second gate structure comprising a second gate dielectric layer and a second gate electrode.

The IGBT device of claim 1, further comprising: an n-type field-stop region located above the n-type collector region and the p-type collector region, the n-type field-stop region located below the n-type drift region.

The IGBT device of claim 1, wherein the second MOSFET cell further comprises a gate trench recessed within the n-type drift region, the second gate dielectric layer and the second gate electrode being located within the gate trench.

The IGBT device of claim 1, wherein the first n-type emitter region and the second n-type emitter region are located within a same p-type body region.

The IGBT device of claim 1, wherein the first and second n-type emitter regions are located within two different p-type body regions.

The IGBT device of claim 1, wherein the first gate covers sidewalls of the n-type floating gate on a side near the n-type drift region.

The IGBT device according to claim 1, wherein when the IGBT device includes a plurality of the second MOSFET cells, the second gate of at least one of the second MOSFET cells is electrically connected to the second n-type emitter region.