阅读说明：本技术 一种功率半导体器件安装结构及模块化制作方法 (Power semiconductor device mounting structure and modular manufacturing method ) 是由 赫金涛 于 2021-09-07 设计创作，主要内容包括：本发明涉及一种功率半导体器件安装结构及模块化制作方法,功率半导体器件安装结构包括功率半导体器件、散热金属体、导热粘接绝缘膜和PCB板；功率半导体器件的本体通过导热粘接绝缘膜粘接固定在散热金属体上；PCB板与散热金属体垂直设置,其中,PCB板与散热金属体之间设有绝缘条,散热金属体同时与绝缘条和PCB固定,且功率半导体器件的引脚穿过PCB板并固定。本发明的导热粘接绝缘膜同时起到绝缘、固定和导热的作用。且功率半导体器件、散热金属体和导热粘接绝缘膜均为扁平结构,节约了空间；散热金属体、功率半导体器件和PCB板形成功率半导体模块形成功率半导体模块,使产品模块化,便于产品的组装、存储和管理。(The invention relates to a power semiconductor device mounting structure and a modularized manufacturing method, wherein the power semiconductor device mounting structure comprises a power semiconductor device, a heat dissipation metal body, a heat conduction bonding insulating film and a PCB (printed Circuit Board); the body of the power semiconductor device is fixedly bonded on the heat dissipation metal body through the heat conduction bonding insulating film; the PCB is perpendicular to the heat dissipation metal body, wherein an insulating strip is arranged between the PCB and the heat dissipation metal body, the heat dissipation metal body is fixed with the insulating strip and the PCB, and the pins of the power semiconductor device penetrate through the PCB and are fixed. The heat-conducting adhesive insulating film provided by the invention has the functions of insulation, fixation and heat conduction. The power semiconductor device, the heat dissipation metal body and the heat conduction bonding insulating film are all in flat structures, so that space is saved; the heat dissipation metal body, the power semiconductor device and the PCB are shaped to form the power semiconductor module, so that the product is modularized, and the assembly, storage and management of the product are facilitated.)

1. A power semiconductor device mounting structure, characterized by comprising:

a power semiconductor device having a body and a pin;

a heat-dissipating metal body;

a thermally conductive adhesive insulating film; the body of the power semiconductor device is fixedly bonded on the heat dissipation metal body through the heat conduction bonding insulating film;

the PCB board, with the heat dissipation metal object sets up perpendicularly, wherein, the PCB board with be equipped with the insulating strip between the heat dissipation metal object, the heat dissipation metal object simultaneously with the insulating strip with PCB is fixed, just the pin of power semiconductor device passes the PCB board is fixed, the heat dissipation metal object the power semiconductor device with PCB plate-shaped power semiconductor module.

2. The power semiconductor device mounting structure according to claim 1, wherein the thermally conductive adhesive insulating film has an upper adhesive layer, a lower adhesive layer, and an insulating layer, the insulating layer being located between the upper adhesive layer and the lower adhesive layer;

the upper bonding layer and the lower bonding layer are organic silicon raw glue layers mixed with heat-conducting fillers, and the insulating layer is glass fiber cloth or a polyimide film.

3. The power semiconductor device mounting structure according to claim 1, wherein the heat-dissipating metal body has a positioning pin, and the positioning pin is fixedly connected to the PCB board through the insulating strip.

4. The power semiconductor device mounting structure according to claim 1, wherein the insulating strip includes an upper barrier strip, a cross barrier strip, and a lower barrier strip, the cross barrier strip is sandwiched between the heat-dissipating metal body and the PCB, the upper barrier strip is located at an edge of the cross barrier strip and extends upward, and is fitted to a surface of the heat-dissipating metal body on which the power semiconductor device is mounted, and abuts against a lower end of the thermally conductive adhesive insulating film; the lower barrier strip is positioned at the other side edge of the transverse barrier strip and extends downwards, and the PCB is abutted against the lower surface of the transverse barrier strip and positioned at the inner side of the lower barrier strip; the transverse barrier strip is provided with a plurality of positioning holes.

5. The power semiconductor device mounting structure according to claim 1, wherein the pin includes a first connection portion connected to the body, a second connection portion for connection to the PCB, and a buffer portion arranged between the first connection portion and the second connection portion, the buffer portion has an arc-shaped structure, a bent structure, or a wavy structure, and the first connection portion and the second connection portion have a straight strip shape.

6. The power semiconductor device mounting structure according to claim 5, wherein: the body is taken as a mounting surface through the fixing surface of the heat-conducting adhesive insulating film and the heat-radiating metal body;

the buffer part is a first wavy structure formed by at least two bending parts, the bending direction of the first wavy structure faces to or is far away from the mounting surface, the bending angle of the first wavy structure is an obtuse angle, and the first wavy structure enables the first connecting part and the second connecting part to be collinear; alternatively, the first and second electrodes may be,

the buffer part is a first bending structure comprising a straight part and an inclined plate, one end of the straight part is connected with the first connecting part, the other end of the straight part is connected with the inclined plate in an acute angle, the other end of the inclined plate is connected with the second connecting part, the straight part extends towards the direction far away from the mounting surface, and the inclined plate inclines towards the mounting surface to enable the first connecting part and the second connecting part to be collinear; alternatively, the first and second electrodes may be,

the buffering part comprises a second bending structure in a side U shape, a U-shaped opening of the second bending structure faces the mounting surface, and a vertical surface where the U-shaped opening is located is consistent with a collinear extension surface of the first connecting part and the second connecting part; alternatively, the first and second electrodes may be,

the buffer part comprises a bridge-shaped third bending structure, an opening of the third bending structure faces the mounting surface, a vertical surface where the opening is located is consistent with collinear extension surfaces of the first connecting part and the second connecting part, the third bending structure is provided with 4 bending parts, and the angle of each bending part is an obtuse angle; alternatively, the first and second electrodes may be,

the buffering part comprises a single arc-shaped structure, the arc-shaped structure protrudes towards a direction far away from the mounting surface, and the first connecting part and the second connecting part are collinear;

buffering portion is the second wave structure including a plurality of arc portions, second wave structure orientation is kept away from the direction of installation face extends and makes first connecting portion with the second connecting portion is parallel but not collineation, arc portion includes first arc portion, second arc portion, third arc portion and fourth arc portion, first connecting portion with second connecting portion are through connecting gradually first arc portion, second arc portion, third arc portion and fourth arc portion are connected, first arc portion is salient down, second arc portion is salient up, third arc portion is salient down, fourth arc portion is salient up and one end is the oblique straight plate with second connecting portion connect.

7. The power semiconductor device mounting structure according to claim 5, wherein: the power semiconductor device is provided with at least three pins, the two pins positioned on the outer side are provided with outer extending parts, the outer extending parts are positioned near the outer side of the first connecting part, and one surface of each outer extending part, which is close to the buffering part, is an inclined surface.

8. A modular manufacturing method of a power semiconductor device mounting structure is characterized by comprising the following steps:

providing a power semiconductor device, a heat dissipating metal body, a thermally conductive adhesive insulating film, a PCB board, and an insulating strip as claimed in any one of claims 1 to 7, the power semiconductor device including a body and a pin;

placing the heat-conducting adhesive insulating film on the heat-radiating metal body, then placing the body of the power semiconductor device on the heat-conducting adhesive insulating film, applying an external force, and fixing the power semiconductor device on the heat-radiating metal body, wherein the heat-conducting adhesive insulating film is subjected to physical change and chemical change under a set pressure and a set temperature;

placing a PCB (printed circuit board) in a direction perpendicular to the heat dissipation metal body, arranging an insulating strip between the PCB and the heat dissipation metal body, wherein the heat dissipation metal body penetrates through the insulating strip to be fixed with the PCB, and meanwhile, pins of the power semiconductor device are fixedly connected with the PCB; the heat dissipation metal body, the power semiconductor device and the PCB are shaped into a power semiconductor module;

the heat dissipation metal body and/or the PCB are/is pre-provided with a reserved installation part, or the heat dissipation metal body and/or the PCB are/is processed with the reserved installation part.

9. The modular fabrication method of a power semiconductor device mounting structure according to claim 8,

the step of fixing the power semiconductor device on the heat-dissipating metal body by causing the heat-conductive adhesive insulating film to undergo physical and chemical changes under a set pressure and a set temperature,

the upper bonding layer and the lower bonding layer of the heat-conducting bonding insulating film are organic silicon raw adhesive layers mixed with heat-conducting fillers, the organic silicon raw adhesive layers are uniformly acted for 15-30 seconds under the pressure of 100-150psi and then heated for 10-15 minutes at the temperature of 150-175 ℃, the heat-conducting bonding insulating film is subjected to physical change and chemical change, and the power semiconductor device is fixed on the heat-radiating metal body.

10. The modular fabrication method of a power semiconductor device mounting structure according to claim 8,

before providing the power semiconductor device, processing the pins to form a first straight strip-shaped connecting part, a second straight strip-shaped connecting part and a buffer part arranged between the first connecting part and the second connecting part;

placing a PCB in a direction perpendicular to the heat dissipation metal body, wherein an insulating strip is arranged between the PCB and the heat dissipation metal body, the heat dissipation metal body penetrates through the insulating strip to be fixed with the PCB, and meanwhile, pins of the power semiconductor device are fixedly connected with the PCB:

the insulating strip comprises an upper barrier strip, a transverse barrier strip and a lower barrier strip, the transverse barrier strip abuts against the lower surface of the heat dissipation metal body, and the upper barrier strip abuts against the lower end of the heat conduction bonding insulating film; the positioning pin of the heat dissipation metal body penetrates through the positioning hole of the transverse barrier strip and the mounting hole of the PCB and is welded and fixed with the PCB, and the lower barrier strip is positioned on the front side of the PCB; the end part of the second connecting part penetrates through the PCB and is fixed by wave soldering.

Technical Field

The invention relates to the technical field of power semiconductor device installation, in particular to a power semiconductor device installation structure and a modular manufacturing method.

Background

A power semiconductor device is a semiconductor device that performs power processing and has a capability of processing a high voltage and a large current, and is widely used in a power supply device. When the power supply apparatus is operated, a large amount of heat is generated due to frequent switching, high voltage, and large current, and therefore the power semiconductor device needs to be heat-dissipated while maintaining insulation. The existing power semiconductor device is mounted in the following way: a heat-conducting insulating medium, such as heat-conducting insulating silica gel cloth or a ceramic sheet, is arranged between the power semiconductor tube and the radiator and is matched with heat-conducting silicone grease for use, and then the power semiconductor device is pressed on the surface of the radiator in a mechanical fastening mode. The power semiconductor device is fixed by adopting a mechanical fastening mode, and problems exist, for example, when the power semiconductor device is fixed by adopting a screw, a heat-conducting insulating medium at the position of a screw mounting hole is damaged by extrusion and torsion, so that the insulation is failed; or, the power semiconductor device at the screw fastening part is deformed by stress and even cracked; the mechanical fastening structure occupies valuable product space, causes the limitation of high-density layout of devices, and the like, and has complex assembly process and poor insulation reliability.

Disclosure of Invention

The technical problem to be solved by the invention is to overcome the defects in the prior art, so that the power semiconductor device mounting structure is provided, a mechanical fastening structure is cancelled, the layout is more compact, and the insulation reliability is higher.

A power semiconductor device mounting structure comprising:

a power semiconductor device having a body and a pin;

a heat-dissipating metal body;

a thermally conductive adhesive insulating film; the body of the power semiconductor device is fixedly bonded on the heat dissipation metal body through the heat conduction bonding insulating film;

the PCB board, with the heat dissipation metal body sets up perpendicularly, wherein, the PCB board with be equipped with the insulating strip between the heat dissipation metal body, the heat dissipation metal body simultaneously with the insulating strip with PCB is fixed, just the pin of power semiconductor device passes PCB board is fixed, the heat dissipation metal body the power semiconductor device with PCB board-shaped power semiconductor module, the heat dissipation metal body and/or the PCB board has the reservation installation department.

In one embodiment, the thermally conductive adhesive insulating film has an upper adhesive layer, a lower adhesive layer, and an insulating layer between the upper adhesive layer and the lower adhesive layer;

the upper bonding layer and the lower bonding layer are organic silicon raw glue layers mixed with heat-conducting fillers, and the insulating layer is glass fiber cloth or a polyimide film.

In one embodiment, the heat dissipation metal body is provided with a positioning pin, and the positioning pin penetrates through the insulating strip to be fixedly connected with the PCB.

In one embodiment, the insulating strip comprises an upper barrier strip, a transverse barrier strip and a lower barrier strip, the transverse barrier strip is clamped between the heat dissipation metal body and the PCB, the upper barrier strip is positioned at the edge of the transverse barrier strip and extends upwards to be attached to the surface of the heat dissipation metal body for mounting the power semiconductor device, and the upper barrier strip abuts against the lower end of the heat conduction bonding insulating film; the lower barrier strip is positioned at the other side edge of the transverse barrier strip and extends downwards, and the PCB is abutted against the lower surface of the transverse barrier strip and positioned at the inner side of the lower barrier strip; the transverse barrier strip is provided with a plurality of positioning holes.

In one embodiment, the pin comprises a first connecting portion connected with the body, a second connecting portion used for connecting the PCB, and a buffering portion arranged between the first connecting portion and the second connecting portion, the buffering portion is of an arc structure, a bent structure or a wavy structure, and the first connecting portion and the second connecting portion are straight strips.

In one embodiment, the fixing surface of the body and the heat dissipation metal body through the heat conduction bonding insulating film is a mounting surface;

the buffer part is a first wavy structure formed by at least two bending parts, the bending direction of the first wavy structure faces to or is far away from the mounting surface, the bending angle of the first wavy structure is an obtuse angle, and the first wavy structure enables the first connecting part and the second connecting part to be collinear; alternatively, the first and second electrodes may be,

the buffer part is a first bending structure comprising a straight part and an inclined plate, one end of the straight part is connected with the first connecting part, the other end of the straight part is connected with the inclined plate in an acute angle, the other end of the inclined plate is connected with the second connecting part, the straight part extends towards the direction far away from the mounting surface, and the inclined plate inclines towards the mounting surface to enable the first connecting part and the second connecting part to be collinear; alternatively, the first and second electrodes may be,

the buffering part comprises a second bending structure in a side U shape, a U-shaped opening of the second bending structure faces the mounting surface, and a vertical surface where the U-shaped opening is located is consistent with a collinear extension surface of the first connecting part and the second connecting part; alternatively, the first and second electrodes may be,

the buffer part comprises a bridge-shaped third bending structure, an opening of the third bending structure faces the mounting surface, a vertical surface where the opening is located is consistent with collinear extension surfaces of the first connecting part and the second connecting part, the third bending structure is provided with 4 bending parts, and the angle of each bending part is an obtuse angle; alternatively, the first and second electrodes may be,

the buffering part comprises a single arc-shaped structure, the arc-shaped structure protrudes towards a direction far away from the mounting surface, and the first connecting part and the second connecting part are collinear;

buffering portion is the second wave structure including a plurality of arc portions, second wave structure orientation is kept away from the direction of installation face extends and makes first connecting portion with the second connecting portion is parallel but not collineation, arc portion includes first arc portion, second arc portion, third arc portion and fourth arc portion, first connecting portion with second connecting portion are through connecting gradually first arc portion, second arc portion, third arc portion and fourth arc portion are connected, first arc portion is salient down, second arc portion is salient up, third arc portion is salient down, fourth arc portion is salient up and one end is the oblique straight plate with second connecting portion connect.

In one embodiment, the power semiconductor device has at least three pins, and two pins located at the outer side have outer extension portions, the outer extension portions are located near the outer side of the first connection portion, and one surface of each outer extension portion, which is close to the buffer portion, is an inclined surface.

In addition, the invention also provides a modular manufacturing method of the power semiconductor device mounting structure, which is used for manufacturing the power semiconductor device mounting structure.

A modular manufacturing method of a power semiconductor device mounting structure comprises the following steps:

providing the power semiconductor device, the heat dissipation metal body, the heat conduction bonding insulating film, the PCB and the insulating strip, wherein the power semiconductor device comprises a body and pins;

placing the heat-conducting adhesive insulating film on the heat-radiating metal body, then placing the body of the power semiconductor device on the heat-conducting adhesive insulating film, applying an external force, and fixing the power semiconductor device on the heat-radiating metal body, wherein the heat-conducting adhesive insulating film is subjected to physical change and chemical change under a set pressure and a set temperature;

placing a PCB (printed circuit board) in a direction perpendicular to the heat dissipation metal body, arranging an insulating strip between the PCB and the heat dissipation metal body, wherein the heat dissipation metal body penetrates through the insulating strip to be fixed with the PCB, and meanwhile, pins of the power semiconductor device are fixedly connected with the PCB; the heat dissipation metal body, the power semiconductor device and the PCB are shaped into a power semiconductor module;

the heat dissipation metal body and/or the PCB are/is pre-provided with a reserved installation part, or the heat dissipation metal body and/or the PCB are/is processed with the reserved installation part.

In one embodiment, the thermally conductive adhesive insulating film is physically and chemically changed at a set pressure and a set temperature, and the step of fixing the power semiconductor device on the heat dissipating metal body comprises:

the upper bonding layer and the lower bonding layer of the heat-conducting bonding insulating film are organic silicon raw adhesive layers mixed with heat-conducting fillers, the organic silicon raw adhesive layers are uniformly acted for 15-30 seconds under the pressure of 100-150psi and then heated for 10-15 minutes at the temperature of 150-175 ℃, the heat-conducting bonding insulating film is subjected to physical change and chemical change, and the power semiconductor device is fixed on the heat-radiating metal body.

In one embodiment, before providing the power semiconductor device, the pins are processed to form a first connection part in a straight strip shape, a second connection part in a straight strip shape and a buffer part arranged between the first connection part and the second connection part;

in one embodiment, in the step of placing a PCB in a direction perpendicular to the heat dissipation metal body, and providing an insulating strip between the PCB and the heat dissipation metal body, the heat dissipation metal body is fixed to the PCB through the insulating strip, and at the same time, the pins of the power semiconductor device are fixedly connected to the PCB:

the insulating strip comprises an upper barrier strip, a transverse barrier strip and a lower barrier strip, the transverse barrier strip abuts against the lower surface of the heat dissipation metal body, and the upper barrier strip abuts against the lower end of the heat conduction bonding insulating film; the positioning pin of the heat dissipation metal body penetrates through the positioning hole of the transverse barrier strip and the mounting hole of the PCB and is welded and fixed with the PCB, and the lower barrier strip is positioned on the front side of the PCB; the end part of the second connecting part penetrates through the PCB and is fixed by wave soldering.

Compared with the prior art, the invention has the beneficial effects that:

according to the power semiconductor device mounting structure and the modular manufacturing method provided by the technical scheme, the power semiconductor device is fixed on the heat dissipation metal body through the heat conduction adhesive insulating film, the heat conduction adhesive insulating film plays a role in fixing the power semiconductor device, heat of the power semiconductor can be transferred to the heat dissipation metal body, normal heat dissipation of the power semiconductor is guaranteed, and meanwhile, the heat conduction adhesive insulating film can meet the electrical requirements of the power semiconductor device and plays an insulating role; the fixing mode reduces materials such as screws and spring clamps needed by a mechanical fastening mode, avoids various defects of the mechanical fastening mode, saves valuable product space, avoids limitation of high-density layout of devices, and is simple in assembly process and high in insulation reliability.

The power semiconductor device mounting structure also comprises a PCB board which is perpendicular to the heat dissipation metal body, and the PCB board is simultaneously connected with the power semiconductor device to form a power semiconductor module, so that the product is modularized, and the assembly, storage and management of the product are facilitated. And the heat dissipation metal body and the PCB board can be provided with a reserved installation part, so that convenience is provided for subsequent production. In order to improve the insulating property of the power semiconductor module, an insulating strip is arranged between the PCB and the heat dissipation metal body, and the heat dissipation metal body is fixed with the insulating strip and the PCB at the same time so as to meet the electrical requirement of the PCB; certainly, the insulating strip also can have the reservation installation department, makes things convenient for follow-up production assembly.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1 is a schematic diagram of a power semiconductor device mounting structure provided in a first embodiment of the present invention.

Fig. 2 is a sectional view of the power semiconductor device mounting structure shown in fig. 1.

Fig. 3 is a schematic view of another angle of the power semiconductor device mounting structure shown in fig. 1.

Fig. 4 is a schematic structural diagram of an insulation strip provided in an embodiment of the present invention.

Fig. 5 is a schematic structural diagram of a heat dissipation metal body according to an embodiment of the present invention.

Fig. 6 is a schematic diagram of a power semiconductor device provided in a first embodiment of the present invention.

Fig. 7 is a schematic diagram of a power semiconductor device provided in a second embodiment of the present invention.

Fig. 8 is a schematic diagram of a power semiconductor device provided in a third embodiment of the present invention.

Fig. 9 is a schematic diagram of a power semiconductor device provided in a fourth embodiment of the present invention.

Fig. 10 is a schematic diagram of a power semiconductor device provided in a fifth embodiment of the present invention.

Fig. 11 is a schematic diagram of a power semiconductor device provided in a sixth embodiment of the present invention.

Fig. 12 is a schematic structural diagram of a thermally conductive adhesive insulating film provided in an embodiment of the present invention.

Description of reference numerals:

1. power semiconductor device 11, body 111, and mounting surface

12. Pin 121, first connecting part 122 and second connecting part

123. Buffer 1231, first wavy structure 12311, bend

1232. First bending structure 12321, straight portion 12322, swash plate

1233. Second bending structure 12331, U-shaped opening 1234 and third bending structure

12341. Curved portion 1235, arc structure 1236, second wave structure

12361. First arc-shaped portion 12362, second arc-shaped portion 12363, and third arc-shaped portion

12364. A fourth arc-shaped part 12365, a slant straight plate 124 and an outer extension part

1241. Inclined plane

2. Heat dissipation metal body 21, positioning pin 22 and reserved installation part

3. Thermally conductive adhesive insulating film 31, upper adhesive layer 32, and insulating layer

33. Lower adhesive layer 4, PCB 41 and pin positioning hole

5. Insulating strip 51, upper barrier strip 52 and transverse barrier strip

521. Positioning hole 53, lower stop strip

DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION

The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

As shown in fig. 1 to 3, the embodiment of the present invention provides a power semiconductor device 1 mounting structure including a power semiconductor device 1, a heat-dissipating metal body 2, and a heat-conductive adhesive insulating film 3; the power semiconductor device 1 has a body 11 and a pin; the body 11 of the power semiconductor device 1 is adhesively fixed to the heat-dissipating metal body 2 by the heat-conductive adhesive insulating film 3.

The power semiconductor device 1 generates heat (power consumption) during operation, the heat dissipation metal body 2 has good heat conduction and heat dissipation performance, and the heat of the power semiconductor device 1 is dissipated through the heat dissipation metal body 2. Compared with the prior art that the power semiconductor device 1 is fixed on the radiating piece through the mechanical fastening structure and the power semiconductor device 1 and the radiating piece are isolated through the independent heat conduction insulating medium, the power semiconductor device 1 mounting structure adopts the heat conduction adhesive insulating film 3 to directly fix the power semiconductor device 1, the heat conduction adhesive insulating film 3 plays roles of insulation, fixation and heat conduction at the same time, no additional mechanical fastening structure and insulating structure is needed, heat generated by the power semiconductor device 1 can be transferred to the radiating metal body 2, and the insulating effect is achieved. And the power semiconductor device 1, the heat dissipation metal body 2 and the heat conduction adhesive insulating film 3 are all flat structures, so that the space is saved, the installation of the power semiconductor device 1 can be more compact, and a new fixing mode of the power semiconductor device 1 in a narrow range is provided. As shown in fig. 1, the heat dissipating metal body 2 in this embodiment is a long plate-shaped structure, on which a plurality of power semiconductor devices 1 are disposed side by side, and is suitable for a narrow space.

The power semiconductor module of the embodiment is applied to a power supply product, the heat dissipation metal body 2 can be used as a part of a frame of the cabinet body and is connected with other electronic elements through the PCB 4 perpendicular to the heat dissipation metal body 2, the assembly efficiency is improved, and the cost is reduced.

The PCB 4 is a main control component for realizing product functions, the power semiconductor device 1 can be used as a switch or a power processing device to be electrically connected with the PCB 4, pins of the power semiconductor device 1 generally extend along the direction of the body 11, in order to facilitate the power semiconductor device 1 to be electrically connected with the PCB 4, the PCB 4 is arranged in the vertical direction of the heat dissipation metal body 2, and the pins can be directly inserted into pin positioning holes 41 of the PCB 4 and are electrically connected with the PCB 4.

Preferably, an insulating strip 5 is arranged between the PCB board 4 and the heat dissipation metal body 2 to improve the insulating performance of the power semiconductor module. During installation, the heat dissipation metal body 2 is fixed with the insulating strip 5 and the PCB at the same time, the pins of the power semiconductor device 1 penetrate through the PCB 4 and are fixed, and the heat dissipation metal body 2, the power semiconductor device 1 and the PCB 4 form a power semiconductor module, so that the product is modularized, the assembly, the storage and the management of the product are facilitated, and meanwhile, the heat dissipation metal body 2 and the PCB 4 can be respectively or respectively provided with a reserved installation part 22, so that convenience is provided for subsequent production; of course, the insulating strip 5 can also be provided with a reserved mounting part 22, so that the subsequent production and assembly are facilitated. As shown in fig. 1, fig. 3 and fig. 4, in the present embodiment, the reserved mounting portion 22 may be a hole-shaped structure, and the power semiconductor module may be mounted and fixed with a subsequent component to be assembled by a mechanical fastening structure such as a screw. In other embodiments, the reserved installation portion 22 may also be a fixture block, a clamping groove, or a boss, and the like, and the specific structure may be set or changed according to a product of subsequent actual production, so as to meet the installation requirements of different products.

Preferably, as shown in fig. 12, the heat-conducting adhesive insulating film 3 has an upper adhesive layer 31, a lower adhesive layer 33, and an insulating layer 32, the insulating layer 32 is located between the upper adhesive layer 31 and the lower adhesive layer 33, the insulating layer 32 serves as an insulating layer to satisfy the electrical requirements of the power semiconductor device 1, the upper adhesive layer 31 is used for fixing the power semiconductor device 1, and the lower adhesive layer 33 is used for fixing the heat-conducting adhesive insulating film 3 on the heat-dissipating metal body 2. Compared with the prior art that the non-setting adhesive is adopted to fix the insulating medium on the radiator, the non-setting adhesive radiator has the following defects: the adhesive sticker in the prior art has limited temperature resistance, the maximum working temperature is only 120 ℃, and the adhesive force is obviously reduced at the temperature, so that the power semiconductor device 1 and the insulating medium cannot be fixed by the adhesive sticker alone, a mechanical fastening structure is required for fixing, the interface filling capacity of the adhesive sticker is limited, the fixing effect cannot be ensured if the surface of the mounting surface 111 of the power semiconductor device 1 or the surface of the heat dissipation metal body 2 is uneven, in addition, the thermal resistance of the adhesive sticker is very large, the good heat conduction and heat dissipation effect cannot be achieved, and the adhesive sticker can only be used on a low-power supply product.

The heat-conducting adhesive insulation film 3 of the embodiment is completely different from the above-mentioned adhesion manner, the upper adhesion layer 31 and the lower adhesion layer 33 of the embodiment are silicone raw rubber layers mixed with heat-conducting fillers, the mastic raw rubber layers are extruded and deformed under the action of a set pressure and generate fluidity, the silicone raw rubber layers can be filled on the mounting surface 111 of the power semiconductor device 1 and the surface of the heat-dissipating metal body 2, the requirements on the smoothness and the flatness of the mounting surface 111 of the power semiconductor device 1 and the surface of the heat-dissipating metal body 2 are lower, the silicone raw rubber layers mixed with the heat-conducting fillers have good heat-conducting effect, the interface thermal resistance is effectively reduced, the wetting adhesion area is improved, the wet adhesion strength is formed, then the silicone raw rubber layers are heated to a set temperature and kept for a certain time, and under the action of high temperature, the raw rubber layers are vulcanized, crosslinked and cured to form a silicone rubber elastomer, meanwhile, hydrogen-sharing chemical bonds and oxygen-sharing chemical bonds with high bonding energy are formed on the surface of the heat dissipation metal body 2 and the mounting surface 111 of the power semiconductor device 1 respectively, so that the bonding connection with the highest strength of 500psi is achieved. The insulating layer 32 is made of glass fiber cloth or polyimide film, and has good insulating properties and voltage resistance.

In the above embodiment, in order to improve the insulation effect between the PCB 4 and the heat dissipation metal body 2, the insulation strip 5 is disposed between the PCB 4 and the heat dissipation metal body 2, so as to meet the electrical requirements of the PCB 4. Specifically, as shown in fig. 2 and 4, the insulating strip 5 of the present embodiment includes an upper barrier strip 51, a cross barrier strip 52 and a lower barrier strip 53, the cross barrier strip 52 is clamped between the heat dissipation metal body 2 and the PCB 4, and mainly plays a role of isolating the lower surface of the heat dissipation metal body 2 from the upper surface of the PCB 4, and therefore, the width of the cross barrier strip 52 corresponds to the width of the heat dissipation metal body 2; the upper barrier strips 51 are positioned at the edges of the transverse barrier strips 52 and extend upwards, are attached to the surface of the heat dissipation metal body 2 for mounting the power semiconductor device 1 and abut against the lower end of the heat-conducting adhesive insulating film 3, the main function of the upper barrier strips 51 is to prevent the pins from accidentally contacting the heat dissipation metal body 2 to cause short circuit, and of course, if the edges of the heat-conducting adhesive insulating film 3 are flush with the lower end edges of the heat dissipation metal body 2, the upper barrier strips 51 can be omitted; in addition, the upper barrier strip 51 also plays a role in facilitating the positioning of the insulating strip 5 to some extent. The lower barrier 53 is located at the other side edge of the horizontal barrier 52 and extends downward, the PCB 4 abuts against the lower surface of the horizontal barrier 52 and is located inside the lower barrier 53, as shown in fig. 3, the lower barrier 53 surrounds the edge of the PCB 4, and plays a role in protecting the PCB 4.

In one embodiment, as shown in fig. 5, the heat-dissipating metal body 2 has a positioning pin 21, and the positioning pin 21 passes through the insulating strip 5 and is fixedly connected to the PCB 4, specifically, as shown in fig. 4, the rail 52 has a plurality of positioning holes 521, the positioning holes 521 correspond to the positioning pin 21, and during installation, the positioning pin 21 passes through the positioning holes 521 and the holes on the PCB 4, and is then welded and fixed to the PCB 4, and at the same time, the insulating strip 5 is clamped and fixed. The positioning pin 21 and the heat dissipation metal plate are of an integrated structure and are made of metal materials.

In this embodiment, the power semiconductor device 1 is fixed in parallel with the heat dissipation metal plate and is fixed perpendicular to the PCB 4, when the power semiconductor module is vibrated by external force, generally, the pin is stressed to generate shearing force between the power semiconductor device 1 and the heat conduction adhesive insulating film 3, so that the power semiconductor device is cracked or separated, therefore, the pin in this embodiment includes a first connecting portion 121 connected with the body 11, a second connecting portion 122 connected with the PCB 4, and a buffer portion 123 arranged between the first connecting portion 121 and the second connecting portion 122, the buffer portion 123 is an arc-shaped structure 1235 or a bent structure or a wavy structure, the first connecting portion 121 and the second connecting portion 122 are straight, so as to be conveniently assembled with the body 11 and the PCB 4, more specifically, when being installed, an end of the second connecting portion 122 needs to be inserted into the pin positioning hole 41 of the PCB 4, the straight second connecting portion 122 is conveniently aligned and inserted, the assembly difficulty is reduced. The buffer portion 123 is used for enhancing the capability of the pins to release mechanical stress, playing a role in buffering and resisting shock, avoiding stress of the body 11 caused by stress of the pins of the power semiconductor device 1, and reducing the risk that the body 11 is cracked or falls off from the heat-conducting adhesive insulating film 3.

Based on the above-described embodiment, as shown in fig. 6 to 11, the buffer portion 123 has various forms, and for convenience of description, a fixing surface of the body 11 to the heat dissipating metal body 2 through the heat conductive adhesive insulating film 3 is defined as a mounting surface 111.

Specifically, as shown in fig. 6, the buffer portion 123 is a first wavy structure 1231 formed by at least two bent portions 12311, and the bending direction of the first wavy structure 1231 is toward or away from the mounting surface 111. In the specific example shown in fig. 6, the first wavy structure 1231 has 5 bends to form two bent portions 12311, and is more suitable for being formed by pressing, so that the springback caused by the punching process can be prevented, and the component precision can be improved. The bending angle of the first wavy structure 1231 is an obtuse angle, so that the demolding performance during press forming can be improved, and the manufacturing cost can be reduced; and the first wavy structure 1231 makes the first connection portion 121 and the second connection portion 122 collinear, and the stresses of the first connection portion 121 and the second connection portion 122 are on the same straight line, so that the deformation of the pin 12 is controllable.

As shown in fig. 7, the buffering portion 123 is a first bending structure 1232 including a straight portion 12321 and an inclined plate 12322, one end of the straight portion 12321 is connected to the first connecting portion 121, the other end of the straight portion is connected to the inclined plate 12322 at an acute angle, the other end of the inclined plate 12322 is connected to the second connecting portion 122, the straight portion 12321 extends toward a direction away from the mounting surface 111, the power semiconductor device 1 is fixed on the heat-dissipating metal body 2, the heat-dissipating metal body 2 is kept away from the first bending structure 1232, when the pin 12 is stressed, a deformation direction of the first bending structure 1232 is opposite to a direction of the heat-dissipating metal body 2, the pin 12 is prevented from touching the heat-dissipating metal body 2, and the pin 12 has a larger movement space. The inclined plate 12322 is inclined towards the mounting surface 111 to make the first connection portion 121 and the second connection portion 122 collinear, the stress of the first connection portion 121 and the stress of the second connection portion 122 are collinear, and the deformation of the pin 12 is controllable.

As shown in fig. 8, the buffer portion 123 includes a second bending structure 1233 in a side U shape, the U-shaped opening 12331 of the second bending structure 1233 faces the mounting surface 111, the power semiconductor device 1 is fixed on the heat dissipation metal body 2, the second bending structure 1233 is far away from the heat dissipation metal body 2, when the pin 12 is stressed, the deformation direction of the second bending structure 1233 is opposite to the direction of the heat dissipation metal body 2, the pin is prevented from touching the heat dissipation metal body 2, and the pin 12 has a larger active space. The vertical plane of the U-shaped opening 12331 is consistent with the collinear extension plane of the first connecting portion 121 and the second connecting portion 122, so that the problem of center of gravity shift when the pin 12 is fixed is avoided.

As shown in fig. 9, the buffer portion 123 includes a bridge-shaped third bending structure 1234, which is more suitable for press forming, so as to prevent springback caused by stamping and improve component precision; the opening of the third bending structure 1234 faces the mounting surface 111, and after the power semiconductor device 1 is fixed on the heat dissipation metal body 2, the third bending structure 1234 is away from the heat dissipation metal body 2, and when the pin 12 is stressed, the deformation direction of the third bending structure 1234 is opposite to the direction of the heat dissipation metal body 2, so that the pin 12 is prevented from touching the heat dissipation metal body 2, and the pin 12 has a larger movement space. And the vertical plane where the opening is located is consistent with the collinear extension plane of the first connecting part 121 and the second connecting part 122, so that the problem of gravity center shift when the pin 12 is fixed is avoided. The third bending structure has 4 bending portions 12341, and the angle of the bending portions 12341 is an obtuse angle, so that the mold release performance during press forming can be improved, and the manufacturing cost can be reduced.

As shown in fig. 10, the buffer portion 123 includes a single arc-shaped structure 1235, and the arc-shaped structure 1235 is protruded away from the mounting surface 111, and the first connection portion 121 and the second connection portion 122 are collinear. After the power semiconductor device 1 is fixed on the heat dissipation metal body 2, the arc-shaped structure 1235 is far away from the heat dissipation metal body 2, and when the pin 12 is stressed, the deformation direction of the arc-shaped structure 1235 is opposite to the direction of the heat dissipation metal body 2, so that the pin 12 is prevented from touching the heat dissipation metal body 2, and the pin 12 has a larger moving space. And the first connection portion 121 and the second connection portion 122 are collinear, the problem of center of gravity shift when the pin 12 is fixed is avoided.

As shown in fig. 11, the buffering portion 123 is a second wavy structure 1236 including a plurality of arc-shaped portions, the second wavy structure 1236 extends in a direction away from the mounting surface 111 to make the first connecting portion 121 and the second connecting portion 122 parallel but not collinear, the arc-shaped portions include a first arc-shaped portion 12361, a second arc-shaped portion 12362, a third arc-shaped portion 12363 and a fourth arc-shaped portion 12364, the first connecting portion 121 and the second connecting portion 122 are connected by sequentially connecting the first arc-shaped portion 12361, the second arc-shaped portion 12362, the third arc-shaped portion 12363 and the fourth arc-shaped portion 12364, the first arc-shaped portion 12361 protrudes downward, the second arc-shaped portion 12362 protrudes upward, the third arc-shaped portion 12363 protrudes downward, the fourth arc-shaped portion 12364 protrudes upward and is connected to the second connecting portion 122 through an inclined straight plate 12365 at one end.

In this embodiment, the power semiconductor device 1 has at least three pins 12, and the two pins 12 located at the outer side have an outer extension portion 124, the outer extension portion 124 is located at the outer side of the first connection portion 121, and a surface of the outer extension portion 124 close to the buffer portion 123 is an inclined surface 1241.

The invention also provides a modular manufacturing method of the power semiconductor device 1 mounting structure, which comprises the following steps:

s1, providing the power semiconductor device 1, the heat dissipation metal body 2, the heat conduction adhesive insulating film 3, the PCB board 4 and the insulating strip 5 in the above embodiment, wherein the power semiconductor device 1 includes a body 11 and a pin;

specifically, before the power semiconductor device 1 is provided, the pins are processed to form the first connection portions 121 in a straight strip shape, the second connection portions 122 in a straight strip shape, and the buffer portions 123 arranged between the first connection portions 121 and the second connection portions 122.

S2, placing the heat-conducting adhesive insulating film 3 on the heat-dissipating metal body 2, placing the main body 11 of the power semiconductor device 1 on the heat-conducting adhesive insulating film 3, applying an external force, and fixing the power semiconductor device 1 on the heat-dissipating metal body 2 by the physical and chemical changes of the heat-conducting adhesive insulating film 3 under a set pressure and a set temperature.

It should be noted that the heat-conducting adhesive insulating film 3 may have viscosity at normal temperature and pressure, and in actual operation, one surface of the heat-conducting adhesive insulating film 3 may be attached to the heat-dissipating metal body 2, then the power semiconductor device 1 is attached to the other surface of the heat-conducting adhesive insulating film 3, and then an external force is applied to further fix the power semiconductor device 1 to the heat-dissipating metal body 2 under a set pressure and a set temperature; alternatively, the power semiconductor device 1 may be attached to one surface of the heat conductive adhesive insulating film 3, the other surface of the heat conductive adhesive insulating film 3 may be attached to the heat dissipating metal body 2, and then an external force may be applied to further fix the power semiconductor device 1 to the heat dissipating metal body 2 at a set pressure and a set temperature.

Preferably, both surfaces of the thermally conductive adhesive insulating film 3 may be provided with separation films, which are torn off to expose the upper adhesive layer 31 and the lower adhesive layer 33. It should be noted that, for convenience of description, the "upper" and "lower" orientations of the upper adhesive layer 31 and the lower adhesive layer 33 are based on the orientations in the drawings, and the upper adhesive layer 31 and the lower adhesive layer 33 can be defined by themselves in practical use.

Preferably, the upper bonding layer 31 and the lower bonding layer 33 of the heat-conducting bonding insulation film 3 are organic silicon raw glue layers mixed with heat-conducting fillers, the organic silicon raw glue layers uniformly act for 15-30 seconds under the pressure of 100-150psi, the daub-shaped raw glue layers are extruded and deformed and generate liquidity, the organic silicon raw glue layers can be filled on the mounting surface 111 of the power semiconductor device 1 and the surface of the heat-radiating metal body 2, the requirements on the smoothness and the flatness of the mounting surface 111 of the power semiconductor device 1 and the surface of the heat-radiating metal body 2 are lower, and the organic silicon raw glue layers mixed with the heat-conducting fillers have good heat-conducting effects, so that the interface thermal resistance is effectively reduced, the wet bonding area is increased, and the wet bonding strength is formed; then heating at the temperature of 150-175 ℃ for 10-15 minutes, vulcanizing, crosslinking and curing the crude rubber layer under the action of high temperature to form a silicon rubber elastomer, and simultaneously forming hydrogen-sharing and oxygen-sharing chemical bonds with high bond energy on the surface of the heat dissipation metal body 2 and the mounting surface 111 of the power semiconductor device 1 respectively so as to achieve the bonding connection with the highest strength of 500 psi; the heat conductive adhesive insulating film 3 is physically and chemically changed to fix the power semiconductor device 1 to the heat dissipating metal body 2.

S3, placing the PCB 4 in a direction perpendicular to the heat dissipation metal body 2, arranging an insulating strip 5 between the PCB 4 and the heat dissipation metal body 2, fixing the heat dissipation metal body 2 with the PCB 4 after penetrating through the insulating strip 5, and fixedly connecting pins of the power semiconductor device 1 with the PCB 4; the heat dissipating metal body 2, the power semiconductor device 1 and the PCB board 4 form a power semiconductor module.

Specifically, the insulating strip 5 comprises an upper barrier strip 51, a transverse barrier strip 52 and a lower barrier strip 53, the transverse barrier strip 52 abuts against the lower surface of the heat dissipation metal body 2, and the upper barrier strip 51 abuts against the lower end of the heat-conducting adhesive insulating film 3; the positioning pin 21 of the heat dissipation metal body 2 passes through the positioning hole 521 of the horizontal barrier strip 52 and the mounting hole of the PCB 4 and is welded and fixed with the PCB 4, and the lower barrier strip 53 is located on the front side of the PCB 4; the end of the second connecting portion 122 passes through the PCB 4 and is then fixed by wave soldering, the soldering material being tin.

The heat dissipation metal body 2, the power semiconductor device 1 and the PCB 4 form a power semiconductor module, so that the product is modularized, and the assembly, storage and management of the product are facilitated; the power semiconductor module has a reserved mounting portion 22, which facilitates subsequent production. The reserved installation part 22 can be arranged on one or more of the heat dissipation metal body 2, the PCB board 4 and the insulation strip 5, and the reserved installation part 22 can be preset on a component before the heat dissipation metal body 2, the PCB board 4 and the insulation strip 5 are assembled together, or can be formed after the assembly is completed. In this embodiment, the reserved installation portion 22 has a hole-shaped structure.

The above-mentioned embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention should not be limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are within the protection scope of the present invention.