阅读说明：本技术 半导体工艺生产线派货方法、存储介质以及半导体设备 (Semiconductor process production line goods dispatching method, storage medium and semiconductor equipment ) 是由 黄进昌 于 2020-06-19 设计创作，主要内容包括：本申请涉及一种半导体工艺生产线派货方法、存储介质以及半导体设备。半导体工艺生产线派货方法可以获取机台中待曝光产品批次的套刻误差基准曲线,并根据套刻误差基准曲线设定套刻误差范围。在曝光完成后,可以获取待曝光产品批次的套刻误差,并判断套刻误差是否落入套刻误差范围内。若待曝光产品批次的套刻误差未落入套刻误差范围内,则可以采用该机台继续加工待曝光产品批次。若待曝光产品批次的套刻误差落入套刻误差范围内,则说明该机台加工的相邻两个产品批次的曝光能量差值较大,需要对机台进行预冷却处理,以使套刻误差位于可以接收的范围内,保证半导体产品的良品率。(The application relates to a semiconductor process production line goods dispatching method, a storage medium and semiconductor equipment. The semiconductor process production line dispatching method can obtain an overlay error reference curve of a product batch to be exposed in a machine station, and set an overlay error range according to the overlay error reference curve. After exposure is completed, the alignment error of the product batch to be exposed can be obtained, and whether the alignment error falls into the alignment error range or not is judged. If the alignment error of the product batch to be exposed does not fall within the alignment error range, the machine can be adopted to continue processing the product batch to be exposed. If the alignment error of the product batch to be exposed falls within the alignment error range, it indicates that the difference between the exposure energies of two adjacent product batches processed by the machine station is large, and the machine station needs to be pre-cooled, so that the alignment error is within the acceptable range, and the yield of the semiconductor product is ensured.)

1. A semiconductor process production line goods dispatching method is characterized by comprising the following steps:

acquiring an overlay error reference curve of a product batch to be exposed of a machine station;

setting an overlay error range according to the overlay error reference curve;

acquiring the overlay error of the product to be exposed after batch exposure;

judging whether the overlay error falls into the overlay error range;

and if the alignment error falls into the alignment error range, pre-cooling the machine.

2. The semiconductor process production line shipment method of claim 1, wherein pre-cooling the machine comprises:

controlling the machine to expose and debug the product batch or wait for a preset time before exposing the next product batch.

3. The semiconductor process line shipping method of claim 1, further comprising, before said obtaining the overlay error of the batch of products to be exposed after exposure, the steps of:

judging whether the number of wafers in a high-exposure-energy product batch continuously exposed by the machine station exceeds the preset number of wafers, wherein the high-exposure-energy product batch is a product batch to be exposed, the exposure energy of which is greater than the preset exposure energy;

and if the number of the wafers in the high-exposure-energy product batch is greater than the preset number of the wafers, cooling the machine.

4. The semiconductor process production line shipping method of claim 3, wherein said cooling said machine comprises:

and adjusting the sequence of the product batches to be exposed.

5. The semiconductor process production line dispatch method of claim 1, wherein the overlay error reference curve is a third order distortion overlay error reference curve.

6. The semiconductor process production line dispatching method of claim 5, wherein setting an overlay error range according to the overlay error reference curve comprises:

setting an alignment error threshold according to the climbing speed and the saturation height of the three-order deformation alignment error in the three-order deformation alignment error reference curve;

and setting the overlay error range according to the overlay error threshold, wherein the maximum value of the overlay error range is smaller than the overlay error threshold.

7. The method as claimed in claim 2, further comprising, before controlling the machine to expose and debug the product lot:

acquiring first exposure energy of a previous product batch and second exposure energy of the product batch to be exposed, wherein the previous product batch is an exposed product batch adjacent to the product batch to be exposed;

determining a third exposure energy of the commissioning product lot from the first exposure energy and the second exposure energy, the third exposure energy being between the first exposure energy and the second exposure energy.

8. The semiconductor process line shipping method of claim 7, further comprising, after said determining said commissioning production lot from said first exposure energy and said second exposure energy:

and setting the number of the wafers in the debugging product batch according to the difference value between the first exposure energy of the previous product batch and the second exposure energy of the product batch to be exposed.

9. The method as claimed in claim 4, further comprising, before the adjusting the sequence of the lots of products to be exposed:

judging whether the machine station reserves the batch of the product to be exposed;

and if the machine station reserves the batch of the product to be exposed, adjusting the batch of the product to be exposed.

10. The semiconductor process line shipping method of claim 9, wherein adjusting the lot of products to be exposed comprises:

acquiring a first batch number of a previous product batch of the product batch to be exposed and a second batch number of a next product batch of the product batch to be exposed;

and exchanging the exposure sequence of the alternative product batch with a third batch number with the exposure sequence of the product batch to be exposed, wherein the third batch number is different from the first batch number and the second batch number.

11. The semiconductor process production line shipping method of claim 2, further comprising, before controlling the machine to wait for a preset time:

and setting the preset time required by the machine station to wait according to the lens heating and lens cooling curves of the machine station.

12. The semiconductor process line shipping method of claim 11, wherein said predetermined time is greater than 1 hour.

13. A computer-readable storage medium, on which a computer program is stored which, when being executed by a processor, carries out the steps of the method according to any one of claims 1 to 12.

14. A semiconductor device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, characterized in that the steps of the method according to any of claims 1-12 are implemented when the processor executes the program.

Technical Field

The application relates to the technical field of semiconductors, in particular to a semiconductor process production line goods dispatching method, a storage medium and semiconductor equipment.

Background

In a semiconductor manufacturing process, a Real Time Dispatch (RTD) system is usually used to allocate lots to be processed to a plurality of tools and adjust the exposure sequence of the lots in each tool.

In the conventional scheme, a built-in algorithm adopted by the RTD system usually only focuses on information such as a time interval (Q-time) between product batches of different processes, a importance degree (speedup/KANBAN) of the product batches, and first-batch product batch data (Targeting), and ignores production conditions of previous and subsequent product batches, thereby reducing a yield of the product batches.

Disclosure of Invention

Accordingly, there is a need to provide a method for dispatching in a semiconductor manufacturing line, a storage medium and a semiconductor device, which can solve the problem of the decrease of the yield of the product lot.

The application provides a semiconductor technology production line group goods method, includes:

acquiring an overlay error reference curve of a product batch to be exposed of a machine station;

setting an overlay error range according to the overlay error reference curve;

acquiring the overlay error of the product to be exposed after batch exposure;

judging whether the overlay error falls into the overlay error range;

and if the alignment error falls into the alignment error range, pre-cooling the machine.

In one embodiment, the pre-cooling the machine includes: controlling the machine to expose and debug the product batch or wait for a preset time before exposing the next product batch.

In one embodiment, before the obtaining the overlay error after the exposure of the batch of products to be exposed, the method further includes:

judging whether the number of wafers in a high-exposure-energy product batch continuously exposed by the machine station exceeds the preset number of wafers, wherein the high-exposure-energy product batch is a product batch to be exposed, the exposure energy of which is greater than the preset exposure energy;

and if the number of the wafers in the high-exposure-energy product batch is greater than the preset number of the wafers, cooling the machine.

In one embodiment, the cooling the machine table includes: and adjusting the sequence of the product batches to be exposed.

In one embodiment, the overlay error reference curve is a third-order deformed overlay error reference curve.

In one embodiment, the setting of the overlay error range according to the overlay error reference curve includes:

setting an alignment error threshold according to the climbing speed and the saturation height of the three-order deformation alignment error in the three-order deformation alignment error reference curve;

and setting the overlay error range according to the overlay error threshold, wherein the maximum value of the overlay error range is smaller than the overlay error threshold.

In one embodiment, before controlling the tool to expose the debug product lot, the method further comprises:

acquiring first exposure energy of a previous product batch and second exposure energy of the product batch to be exposed, wherein the previous product batch is an exposed product batch adjacent to the product batch to be exposed;

determining a third exposure energy of the commissioning product lot from the first exposure energy and the second exposure energy, the third exposure energy being between the first exposure energy and the second exposure energy. In one embodiment, after said determining said lot of debug products according to said first exposure energy and said second exposure energy, further comprises:

and setting the number of the wafers in the debugging product batch according to the difference value between the first exposure energy of the previous product batch and the second exposure energy of the product batch to be exposed.

In one embodiment, before the adjusting the order of the batches of products to be exposed, the method further includes:

judging whether the machine station reserves the batch of the product to be exposed;

and if the machine station reserves the batch of the product to be exposed, adjusting the batch of the product to be exposed.

In one embodiment, adjusting the batch of products to be exposed comprises:

acquiring a first batch number of a previous product batch of the product batch to be exposed and a second batch number of a next product batch of the product batch to be exposed;

and exchanging the exposure sequence of the alternative product batch with a third batch number with the exposure sequence of the product batch to be exposed, wherein the third batch number is different from the first batch number and the second batch number.

In one embodiment, before controlling the machine to wait for the preset time, the method further includes:

and setting the preset time required by the machine station to wait according to the lens heating and lens cooling curves of the machine station.

In one embodiment, the predetermined time is greater than 1 hour.

Based on the same inventive concept, the present application further provides a computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, implements the steps of the method of any one of the above embodiments.

Based on the same inventive concept, the present application further provides a semiconductor device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, wherein the processor implements the steps of the method according to any of the above embodiments when executing the program.

The semiconductor process production line goods dispatching method can obtain the alignment error reference curve of the product batch to be exposed in the machine, and sets the alignment error range according to the alignment error reference curve. After exposure is completed, the alignment error of the product batch to be exposed can be obtained, and whether the alignment error falls into the alignment error range or not is judged. If the alignment error of the product batch to be exposed does not fall within the alignment error range, it indicates that the exposure energy difference of two adjacent product batches processed by the machine station is within the acceptable range, and the yield of the semiconductor product is not affected, so that the machine station can be adopted to continue to perform exposure processing on the product batch to be exposed. If the alignment error of the product batch to be exposed falls within the alignment error range, it indicates that the difference between the exposure energies of two adjacent product batches processed by the machine station is large, and the machine station needs to be pre-cooled, so that the alignment error is within the acceptable range, and the yield of the semiconductor product is ensured.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

Fig. 1 is a flowchart of a semiconductor process production line dispatch method according to an embodiment of the present disclosure;

fig. 2 is a three-order deformation overlay error reference curve diagram of a product batch to be exposed on a machine obtained in a semiconductor process production line shipment method according to an embodiment of the present disclosure;

FIG. 3 is a graph illustrating lens heating and lens cooling in a semiconductor manufacturing line shipping method according to an embodiment of the present disclosure;

FIG. 4 is a schematic diagram of a method for screening different product batches of a reserved machine by pre-cooling rules and cooling rules in a semiconductor process production line dispatch method according to an embodiment of the present disclosure;

fig. 5 is a software interface diagram of a semiconductor process production line dispatch method according to an embodiment of the present disclosure.

Detailed Description

To facilitate an understanding of the present application, the present application will now be described more fully with reference to the accompanying drawings. Preferred embodiments of the present application are shown in the drawings. This application may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the present application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.

Spatial relational terms, such as "under," "below," "under," "over," and the like may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. It will be understood that the spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. For example, if the device in the figures is turned over, elements or features described as "below" or "beneath" other elements or features would then be oriented "above" the other elements or features. Thus, the exemplary terms "under" and "under" can encompass both an orientation of above and below. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.

As used herein, the singular forms "a", "an" and "the" may include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. Also, as used herein, the term "and/or" includes any and all combinations of the associated listed items.

Lens Heating (LH) effect is a phenomenon in which the Lens heats up after absorbing heat during exposure, thereby causing a change in parameters of an image obtained by photolithography. In semiconductor manufacturing processes, photolithography in semiconductor manufacturing processes may be accomplished by projecting a laser beam through a photomask to a lens and then through the lens to a wafer (wafer). However, the photomask and the specific illumination mode used in the photolithography process may cause some portions of the lens to absorb more heat than other portions, i.e., cause the lens to heat up. It will be appreciated that as lens usage time increases, lens heating effects become more pronounced, further affecting the image parameters formed after exposure.

Therefore, in the semiconductor field, the exposure energy before and after each product Lot (Lot) in the tool affects the yield of the product Lot. For example, when a machine (a mask is located inside the machine) in a semiconductor production line successively exposes two adjacent product batches to be exposed by using high exposure energy and low exposure energy with large energy difference, or continuously exposes a plurality of product batches to be exposed by using high exposure energy, the quality of the product batches is affected, and the yield of the product batches is reduced.

Referring to fig. 1, in order to solve the above problem, the present application provides a method for dispatching in a semiconductor process production line. The semiconductor process production line goods dispatching method comprises the following steps:

step S110, acquiring an overlay error reference curve of a product batch to be exposed of a machine station;

step S120, setting an overlay error range according to an overlay error reference curve;

step S130, acquiring overlay errors of the products to be exposed after batch exposure;

step S140, judging whether the overlay error falls into the overlay error range;

and S150, if the alignment error falls into the alignment error range, pre-cooling the machine.

The semiconductor process production line goods dispatching method can obtain the alignment error reference curve of the product batch to be exposed in the machine, and sets the alignment error range according to the alignment error reference curve. After exposure is completed, the alignment error of the product batch to be exposed can be obtained, and whether the alignment error falls into the alignment error range or not is judged. If the alignment error of the product batch to be exposed does not fall within the alignment error range, it indicates that the exposure energy difference of two adjacent product batches processed by the machine is within the acceptable range, and the yield of the semiconductor product is not affected, so that the machine can be adopted to continue to perform exposure processing on other reserved product batches to be exposed. If the alignment error of the product batch to be exposed falls within the alignment error range, it indicates that the difference between the exposure energies of two adjacent product batches processed by the machine is large. For example, the exposure energy of the previous batch is much higher than that of the next batch adjacent to the previous batch, and pre-cooling is required to be performed on the machine to make the overlay error within the acceptable range, thereby ensuring the yield of the semiconductor product.

Referring to FIG. 2, in one embodiment, in step S110, the RTD system can obtain an overlay error reference curve of the product lot to be exposed on each tool. In one embodiment, the overlay error reference curve may be a third order distortion overlay error (D3) reference curve. Where order 3 in D3 is the overlay error that appears to be a cubic (or third order) change with increasing distance from the center point. It can be understood that, since the RTD system determines the optimal production conditions (Process window) of the lot or each Process before the tool performs the exposure Process on the lot, the reference curve of the optimal exposure energy and the third-order distortion overlay error of the Process can be obtained before the lot is subjected to the exposure Process.

In one embodiment, the setting of the overlay error range according to the overlay error reference curve includes:

and step S121, setting an overlay error threshold according to the climbing speed and the saturation height of the third-order deformation overlay error in the third-order deformation overlay error reference curve.

And S122, setting an alignment error range according to the alignment error threshold, wherein the maximum value of the alignment error range is smaller than the alignment error threshold.

In one embodiment, in step S121, since the exposure energy level affects the climbing speed of D3 and the height achieved during saturation, it can be known from the experience of semiconductor product or semiconductor processing of the machine tool that if D3 is greater than a certain value, the exposure of the subsequent product lot may be affected, and the overlay error threshold can be set accordingly.

In one embodiment, in step S122, since the pre-cooling process is performed on the stage before D3 reaches the overlay error threshold, an overlay error range may be set according to the overlay error threshold. It should be noted that the maximum value of the overlay error range is smaller than the overlay error threshold. If the alignment error of the current product batch falls into the alignment error range, it indicates that the current exposure energy of the machine is too high, and the yield of the subsequent product batch may be affected. Therefore, when the alignment error of the current product batch does not reach the alignment error threshold and is within the alignment error range, the machine can be pre-cooled by the RTD system, so that the lens heating effect is weakened, and the yield of the subsequent product batch is ensured. It can be understood that the maximum value of the overlay error range is smaller than the overlay error threshold, so that the arrangement of the overlay error range can avoid the problem of reduction of the yield of the subsequent product batch caused by insufficient accuracy of the overlay error threshold, and the yield of the subsequent product batch can be ensured to the maximum extent.

In one embodiment, pre-cooling the tool comprises:

step S151, control the machine to expose the debugging product lot or wait for a predetermined time before exposing the next product lot. In this embodiment, by sending the debugged product batch to the machine for exposure or waiting for a preset time before exposing the next product batch, the exposure energy difference between two adjacent product batches processed by the machine can be reduced, and the lens heating effect can be reduced, so that the overlay error is within an acceptable range, and the yield of semiconductor products can be ensured.

In one embodiment, in step S151, after the machine platform performs exposure processing on the high exposure energy product lot, the debugging product lot refers to the process and non-product masks that are not affected by the conversion from the high exposure energy to the low exposure energy, and may be subjected to exposure processing before the subsequent low exposure energy product lot is exposed. It is understood that after the high exposure energy process layer is exposed through the wafer on the machine table, the debugging layer is exposed through the barrier control film before the subsequent low exposure energy process layer is exposed.

In one embodiment, the debug product lot cannot be the same as the previous high exposure energy product lot and the following low exposure energy product lot, and it is possible to select a debug product lot having an exposure energy between the high exposure energy product lot and the low exposure energy product lot for exposure debugging. For example, if the high exposure energy of the previous lot is 100 and the low exposure energy of the next lot is 40, the exposure energy in the middle range of 40-100, such as 60-70, can be selected to expose the test lot. In this embodiment, after the machine performs exposure processing on the test product batch, the machine performs exposure processing on the product batch with low exposure energy 40, so that an excessively different exposure energy difference does not occur, the lens heating effect can be weakened, and the yield of the low exposure energy 40 product batch is ensured.

In one embodiment, in step S151, after the machine performs the exposure process on the high exposure energy product lot, the machine may wait for a predetermined time before performing the exposure process on the subsequent low exposure energy product lot. It can be understood that the lens in the machine can be cooled within the preset time, the heating effect of the lens can be weakened to a certain extent, and the yield of subsequent low-exposure-energy product batches is ensured. The preset time can be set according to actual needs. In one embodiment, the preset time may be, but is not limited to, twice the operation time interval (OPStart time gap) between two adjacent product batches. It should be noted that the subsequent low-exposure-energy product lot can be started only after the debugging product lot is started to perform the exposure processing, and if the exposure processing of the debugging product lot is cancelled, the exposure processing of the subsequent low-exposure-energy product lot also needs to be cancelled.

In one embodiment, before controlling the console exposure to debug the product lot, the method further comprises:

step S051, acquiring first exposure energy of a previous product batch and second exposure energy of a product batch to be exposed, wherein the previous product batch is an exposed product batch adjacent to the product batch to be exposed;

in step S052, a third exposure energy for debugging the product lot is determined according to the first exposure energy and the second exposure energy, and the third exposure energy is between the first exposure energy and the second exposure energy.

In one embodiment, the function of commissioning a product lot is to reduce the span between a first exposure energy of a previous product lot and a second exposure energy of a product lot to be exposed. Therefore, the third exposure energy of the product lot needs to be adjusted between the first exposure energy and the second exposure energy to reduce the span from the exposure of the previous product lot to the exposure of the product lot to be exposed.

In one embodiment, after determining the lot of debug products according to the first exposure energy and the second exposure, the method further comprises:

in step S0521, the number of wafers in the debug product lot is set according to the difference between the first exposure energy of the previous product lot and the second exposure energy of the product lot to be exposed. Wherein the previous product lot is an exposed product lot adjacent to the product lot to be exposed. It can be appreciated that if the number of wafers in a lot is too small, the cooling effect of the lens in the tool may be insignificant. In this embodiment, the number of wafers in the debugging product batch is set according to the difference between the first exposure energy of the previous product batch and the second exposure energy of the product batch to be exposed, so that the cooling effect of the lens after exposure processing of the debugging product batch can meet the requirement of the subsequent product batch to be exposed, and the yield of the subsequent product batch to be exposed is ensured.

In the field of semiconductor technology, recipe is a plurality of steps of process processing in the semiconductor automatic production process, various process parameter values of each step and duration of each step. Because the same machine repeatedly executes the same recipe for many times, the exposure energy is continuously higher, and the quality and the yield of the product batch processed by the machine are influenced. Therefore, in one embodiment, before acquiring the overlay error after exposure of the batch of products to be exposed, the method further includes:

step S011, determining whether the number of wafers in a high exposure energy product lot continuously exposed by the machine exceeds a preset number of wafers, wherein the high exposure energy product lot is an exposure product lot with exposure energy larger than the preset exposure energy.

In step S012, if the number of wafers in the high exposure energy product lot is greater than the preset number of wafers, the machine is cooled. In one embodiment, the cooling process for the machine includes: and adjusting the sequence of the product batches to be exposed.

In one embodiment, in step S011, a threshold value for distinguishing between the high exposure energy and the low exposure energy may be preset, i.e., the high exposure energy product lot is defined as a product lot with an exposure energy greater than the preset exposure energy. In this embodiment, the RTD system may record the exposure energy of the exposed product lot and determine whether the number of wafers in the high exposure energy product lot is greater than the preset number of wafers, so as to determine whether the tool satisfies the condition of high exposure energy continuous production. The number of the preset wafers can be set according to actual needs.

In one embodiment, in step S012, when the number of wafers in the high exposure energy product lot is greater than the predetermined number of wafers, the tool has satisfied the condition of the high exposure energy continuous production. At this time, the quality of the product batch is affected by continuously controlling the machine to process the subsequent product batch to be exposed, which results in a decrease in yield of the subsequent product batch to be exposed, and therefore, the machine needs to be cooled. In one embodiment, the lens heating effect caused by the continuous high exposure energy production of the tool can be reduced by adjusting the order of the product batches to be exposed, i.e. allocating the product batches with lower exposure energy to the tool through the RTD system.

In one embodiment, before performing the cooling process on the tool to adjust the sequence of the product batches to be exposed, the method further comprises:

step S013, determine whether the machine is reserved for the product lot to be exposed.

In step S014, if the machine reserves the batch of the product to be exposed, the batch of the product to be exposed is adjusted.

In one embodiment, in step S013, it can be determined whether the tool reserves the product lot to be exposed. The RTD system can use different methods to cool the tool according to the reserved batch of the product to be exposed.

In one embodiment, the step S014, adjusting the batch of products to be exposed includes:

in step S0141, a first lot number of a previous product lot of the product lot to be exposed and a second lot number of a next product lot of the product lot to be exposed are obtained.

Step S0142, exchanging the exposure sequence of the candidate product lot with a third lot number different from the first lot number and the second lot number with the product lot to be exposed.

In one embodiment, to prevent the exposure of the product lot having the same exposure energy, the product lot to be exposed may be replaced with an alternative lot having another exposure energy when the number of wafers exposed by the product lot to be exposed exceeds the preset number of wafers. Thus, the third lot number of the alternative product lot may be different from the first lot number and the second lot number.

In one embodiment, if the tool reserves a product lot to be exposed, the RTD system can control the tool to preferentially expose a low-exposure-energy product lot, so as to avoid the problem of yield reduction caused by a high-exposure-energy product lot continuously processed by the tool. If there is no product lot with low exposure energy in the reserved product lot to be exposed, the RTD system can dispatch the product to the machine to ensure that there is a product lot with low exposure energy in the reserved product lot to be exposed. Or, when there is no product lot with low exposure energy in the reserved product lot to be exposed, the machine may also process the product lot to be exposed according to the non-reserved product lot, that is, the machine may wait for the preset time according to the actual requirement.

Referring to fig. 3, in one embodiment, before the controlling machine waits for the preset time, the method further includes:

and step S053, setting the preset waiting time of the machine station according to the lens heating and lens cooling curves of the machine station. In this embodiment, the preset time required to wait for the machine station can be set according to the lens heating and lens cooling curves of the machine station, and the specific preset time can be set according to actual needs. It can be understood that, since the production time of each product batch is about 20 minutes, when the preset time required for the machine to wait exceeds but is not limited to 1 hour, it can be ensured that the subsequent product batches or processes can be produced normally. Therefore, in one embodiment, the predetermined time required for the machine to wait may be greater than 1 hour.

Referring to FIG. 4, in one embodiment, the algorithm built in the RTD system can adjust the Batch serial number (Batch ID) of different product batches by setting the pre-cooling rule and the cooling rule of the machine. According to the embodiment of performing pre-cooling treatment and cooling treatment on the machine, the pre-cooling rule and the cooling rule can be set corresponding to different lens heating, and can be used for screening the batch of the product to be exposed reserved for the machine, so that the yield of the product to be exposed entering the machine can be ensured through pre-cooling treatment and cooling treatment. In this embodiment, before the product lot is reserved, the RTD system may determine whether the process parameters of the product lot satisfy the pre-cooling rule and the cooling rule corresponding to the machine that the RTD system wants to reserve. If the process parameters of the product batch do not satisfy the pre-cooling rule and the cooling rule corresponding to the machine to be reserved, i.e. no matter the machine is pre-cooled or cooled, the yield after the exposure of the product batch cannot be guaranteed, the RTD system does not give the production serial number of the production batch in the machine. For example, as shown in FIG. 4, where lot 2, lot 4, and lot 7 do not satisfy the pre-cooling rule and the cooling rule of the tool, the RTD system does not give the three lots the serial number of the tool.

Referring also to fig. 5, in one embodiment, the software control interface of the RTD system may include a plurality of modules and save and cancel buttons.

The first module is an activation flag module (Active flag), which can be selected by checking, and may include an equipment group (EQP group), an equipment number (EQP ID), a Rule group (Rule group), a Rule number (Rule ID), and a remark (Description). The machine group can be a pull-down menu, can select the machine number, and can simultaneously select a plurality of machine numbers or all machine numbers. When all the machine numbers are selected, all the machines form a synchronous group. The rule set may also be a drop-down menu, and pre-cooling rules or cooling rules of the machine may be selected. The rule number can be manually input, but the rule number of the same machine set cannot be repeated, namely only one dispatching rule can be adopted at the same time. Notes can be entered manually and the maximum byte can be less than 128 bits.

The second module is a produced product lot module, which may include a produced product lot List (Pre-Layer List), a maximum number of wafers (Max wfr cnt), and a Current number of wafers (Current wfr cnt). Pressing the button on the produced lot form may jump out of the recipe name and the query may be made by searching or manually entering the produced lot, where the search may support double asterisks and fuzzy contrasts other than xxx. Since the product lot satisfying the cooling rule is a product lot in which abnormality occurs when high exposure energy is continuously supplied, and the product lot satisfying the pre-cooling rule is a product lot in which abnormality occurs when high exposure energy and low exposure energy are exchanged, a part of the products within the cooling rule may be included in the pre-cooling rule. Thus, the maximum number of wafers may be manually entered when a cooling rule is selected from the set of rules, and may not be entered when a pre-cooling rule is selected from the set of rules. The current wafer number may indicate the number of wafers operated in the cluster and may be manually modified.

The third module is a debug product lot module, which may include a minimum wafer count (Min wfr cnt), a debug product lot duration (Mix time), a Current wafer count (Current wfr cnt), and a Last to-be-processed product lot operation time (Last pre-layer OP time). The minimum number of wafers can be manually input, the time for debugging a product batch is the time for inserting a debugging product batch between two adjacent product batches, and the unit can be minutes. The current wafer number may indicate the number of wafers operated in the cluster and may be manually modified. The operation time of the last batch of products to be processed can be displayed, and the default is the current time, so that manual modification can be carried out.

The fourth module is a to-be-produced product batch module, which may include a to-be-produced product batch List (Post-Layer List). The product lot list to be produced can be pressed to jump out of the recipe name, and the produced product lot can be searched for by searching or manually inputting, wherein the searching can support double asterisks and fuzzy contrast except xxx.

Based on the same inventive concept, the present application further provides a computer-readable storage medium, on which a computer program is stored, which, when being executed by a processor, implements the steps of the method of any one of the above embodiments.

Based on the same inventive concept, the present application further provides a semiconductor device comprising a memory, a processor and a computer program stored on the memory and executable on the processor, wherein the processor implements the steps of the method according to any of the above embodiments when executing the program.

The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.

The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the claims. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.