阅读说明：本技术 基于光电共封装的量子噪声源模块及量子噪声源生成方法 (Quantum noise source module based on photoelectric co-packaging and quantum noise source generation method ) 是由 薛叙 徐兵杰 陆兆辉 徐律 樊矾 于 2021-09-08 设计创作，主要内容包括：本发明公开了一种基于光电共封装的量子噪声源模块及量子噪声源生成方法,包括超辐射发光单元、光电探测单元和跨阻放大器单元,超辐射发光单元贴设在竖直放置的第一基板上表面,光电探测单元贴设在水平放置的第二基板上表面,超辐射发光单元的出光面和光电探测单元的光敏面正对排布并在二者之间形成光路传输自由空间,超辐射发光单元自发产生宽谱辐射光束经光路自由空间与光电探测单元进行光耦合,光电探测单元的输入端探测并采集入射的光信号,跨阻放大器单元水平贴设在第二基板上,跨阻放大器单元的输入端与光电探测单元的输出端连接,本发明利用CPO光电共封装技术,将光电芯片共同封装于壳体内,实现了量子随机数发生器国产化、小型化和稳定化。(The invention discloses a quantum noise source module based on photoelectric co-encapsulation and a quantum noise source generation method, comprising a super-radiation light-emitting unit, a photoelectric detection unit and a transimpedance amplifier unit, wherein the super-radiation light-emitting unit is attached to the upper surface of a first substrate which is vertically arranged, the photoelectric detection unit is attached to the upper surface of a second substrate which is horizontally arranged, the light-emitting surface of the super-radiation light-emitting unit and the photosensitive surface of the photoelectric detection unit are oppositely arranged and form a light path transmission free space between the light-emitting surface and the photosensitive surface of the photoelectric detection unit, the super-radiation light-emitting unit spontaneously generates a wide-spectrum radiation beam which is optically coupled with the photoelectric detection unit through the light path free space, the input end of the photoelectric detection unit detects and collects an incident optical signal, the transimpedance amplifier unit is horizontally attached to the second substrate, and the input end of the transimpedance amplifier unit is connected with the output end of the photoelectric detection unit, the photoelectric chips are packaged in the shell together, so that the localization, miniaturization and stabilization of the quantum random number generator are realized.)

1. A quantum noise source module based on photoelectric co-encapsulation is encapsulated in a cavity tube shell and is characterized by comprising a super-radiation light-emitting unit, a photoelectric detection unit and a trans-impedance amplifier unit, wherein the super-radiation light-emitting unit is attached to the upper surface of a first substrate which is vertically placed, the photoelectric detection unit is attached to the upper surface of a second substrate which is horizontally placed, the first substrate and the second substrate are vertically arranged, the light-emitting surface of the super-radiation light-emitting unit and the photosensitive surface of the photoelectric detection unit are strictly aligned and form a free space for light path transmission between the light-emitting surface and the photosensitive surface, the super-radiation light-emitting unit spontaneously generates a wide-spectrum radiation beam which is optically coupled with the photoelectric detection unit through the free space, and the input end of the photoelectric detection unit detects and acquires an incident optical signal and converts the incident optical signal into a radio-frequency current signal; the transimpedance amplifier unit is horizontally attached to the second substrate, and the input end of the transimpedance amplifier unit is connected with the output end of the photoelectric detection unit and used for performing transimpedance amplification on the radio-frequency current signal generated by the photoelectric detection unit and then outputting the radio-frequency current signal.

2. The optoelectronic co-package based quantum noise source module of claim 1, wherein: the super-radiation light-emitting unit is an SLED chip, the photoelectric detection unit is a high-bandwidth photoelectric detector PD chip, the transimpedance amplifier unit is an LNA (low noise amplifier), the SLED chip is fixed on the first substrate through gold wire bonding, the PD chip is fixed on the second substrate through gold wire bonding, and the LNA low noise amplifier is installed on the second substrate.

3. The optoelectronic co-package based quantum noise source module of claim 2, wherein: the distance between the light-emitting surface of the SLED chip and the photosensitive surface of the PD chip is 50-70um, the bandwidth of the PD chip is more than 3GHz, and the bandwidth of the LNA low noise amplifier is more than 6 GHz.

4. The optoelectronic co-package based quantum noise source module of claim 3, wherein: the first substrate and the second substrate are aluminum nitride ceramic substrates, and gold-plated layers cover the surfaces of the second substrates; the first substrate and the second substrate are used for conducting 50-ohm impedance matching on the transmission line in a coplanar waveguide mode, a 90-degree right angle exists at the corner of the transmission line, and 45-degree beveling is conducted at the right-angle bent position.

5. The optoelectronic co-package based quantum noise source module of claim 4, wherein: the temperature control unit is arranged on the inner bottom surface of the tube shell, the cold surface of the TEC temperature control unit is arranged upwards, and the temperature control unit is used for acquiring the temperature of the SLED chip acquired by the thermistor and controlling the temperature in the tube shell.

6. The optoelectronic co-package based quantum noise source module of claim 5, wherein: the tube is the kovar alloy material, the tube adopts parallel seam welding sealing mode to carry out airtight encapsulation, and the one end of tube is equipped with the opening, and the bottom of tube is provided with the circuit board for with the bottom surface of first base plate and second base plate is connected, and is connected with external circuit, the overall dimension of tube is 7.4mm 5.4mm 5.2 mm.

7. A quantum noise source generation method based on the quantum noise source module of any one of claims 1-6, comprising the steps of:

s1: generating a broad spectrum radiation beam by a superluminescent unit;

s2: the wide-spectrum radiation beam is optically coupled with the photoelectric detection unit through the free space, and the front side of a photosensitive surface of the photoelectric detection unit collects the incident wide-spectrum radiation beam and converts the incident wide-spectrum radiation beam into a radio frequency current signal;

s3, the output end of the photoelectric detection unit outputs a radio frequency current signal and transmits the radio frequency current signal to a transimpedance amplifier unit, and the input end of the transimpedance amplifier unit receives the radio frequency current signal and performs transimpedance amplification processing;

and S4, the transimpedance amplifier unit outputs the amplified radio-frequency current signal outwards.

8. A quantum noise source generation method according to claim 7, characterized by: the super-radiation light-emitting unit is an SLED chip, the photoelectric detection unit is a high-bandwidth photoelectric detector PD chip, the light-emitting surface of the SLED chip is strictly aligned with the photosensitive surface of the PD chip, the transimpedance amplifier unit is an LNA low-noise amplifier, a wide-spectrum radiation beam output by the SLED chip is incident to the photosensitive surface of the photoelectric detector PD chip through a free space, and the photoelectric conversion of the wide-spectrum radiation beam is carried out by the photoelectric detector PD chip to form a radio-frequency current signal which is amplified by the LNA low-noise amplifier and then output.

Technical Field

The invention relates to the technical field of quantum random numbers, in particular to a quantum noise source module based on photoelectric co-packaging and a quantum noise source generation method.

Background

Random numbers are one of the important resources of cryptography, and in both classical cryptography and quantum cryptography, their randomness requirements on random numbers are very strict, and even directly determine the security of most cryptosystems.

At present, the generation methods of random numbers can be divided into two main categories based on the characteristics of the generation method and the output sequence: pseudo-random number generators and physical random number generators. The randomness of the physical random-like numbers is based on the randomness of some non-deterministic objective physical phenomena, including atmospheric noise, electronic noise, circuit jitter, and the like, and the random number generators generate random numbers by detecting the results of the physical phenomena. Meanwhile, if the physical phenomena are quantum phenomena, the physical random number generator is called a Quantum Random Number Generator (QRNG), and the physical phenomena comprise vacuum fluctuation, phase noise, radiative decay and other equivalent physical processes. Due to quantum mechanical intrinsic randomness of quantum physical processes, a Quantum Random Number Generator (QRNG) is generally considered to have true randomness and cannot be predicted, so that the QRNG is an ideal random number generator.

The existing Quantum Random Number Generator (QRNG) is generally based on a separated optical device system, and most of the existing Quantum Random Number Generator (QRNG) adopts a device integration implementation mode of an imported laser, an optical fiber, a connector, an inlet detector and a microwave amplifier, and the implementation mode has the defects of high generation cost and incapability of realizing localization, and meanwhile, the occupied space of components and fiber in a module is large, so that the integral volume of integrated packaging is large, and the requirement that the quantum random number generator tends to miniaturization development is not facilitated.

In addition, in the process of promoting the chip formation of the quantum random number generator, the difficulty in realizing the optical interconnection among the chips is still high, and the key problem is that the related processing technology of the optoelectronic device is not compatible with the CMOS technology. The conventional photoelectric chip space optical path coupling adopts a parallel butt joint mode of a packaging substrate, has a coupling degree angle and poor stability, and cannot meet the requirement of miniaturized integrated packaging. How to realize high-efficiency (not less than 60%) coupling between photoelectric chips in a tiny space (7.5mm multiplied by 5.4mm) is a problem which needs to be solved at present.

Disclosure of Invention

In order to solve the technical problems in the background art, the invention provides a quantum noise source module based on photoelectric Co-encapsulation and a quantum noise source generation method.

The invention adopts the following technical scheme: a quantum noise source module based on photoelectric co-encapsulation is encapsulated in a cavity tube shell and comprises a super-radiation light-emitting unit, a photoelectric detection unit and a trans-impedance amplifier unit, wherein the super-radiation light-emitting unit is attached to the upper surface of a first substrate which is vertically placed, the photoelectric detection unit is attached to the upper surface of a second substrate which is horizontally placed, the first substrate and the second substrate are vertically arranged, the light emitting surface of the super-radiation light-emitting unit and the photosensitive surface of the photoelectric detection unit are oppositely arranged to form a free space for light path transmission between the light emitting surface and the photosensitive surface, the super-radiation light-emitting unit spontaneously generates a wide-spectrum radiation beam, the wide-spectrum radiation beam is optically coupled with the photoelectric detection unit through the free space of the light path, the input end of the photoelectric detection unit detects and acquires an incident optical signal, and converts the incident optical signal into a radio-frequency current signal; the transimpedance amplifier unit is horizontally attached to the second substrate, and the input end of the transimpedance amplifier unit is connected with the output end of the photoelectric detection unit and used for performing transimpedance amplification on the radio-frequency current signal generated by the photoelectric detection unit and then outputting the radio-frequency current signal.

As an optimized scheme, the super-radiation light-emitting unit is an SLED chip, the photoelectric detection unit is a high-bandwidth photoelectric detector PD chip, the transimpedance amplifier unit is an LNA low-noise amplifier, the SLED chip is fixed on the first substrate through gold wire bonding, the PD chip is fixed on the second substrate through gold wire bonding, and the LNA low-noise amplifier is installed on the second substrate.

As an optimization scheme, the distance between the light-emitting surface of the SLED chip and the photosensitive surface of the PD chip is 50-70um, the bandwidth of the PD chip is more than 3GHz, and the bandwidth of the LNA low noise amplifier is more than 6 GHz.

As an optimized scheme, the first substrate and the second substrate are aluminum nitride ceramic substrates, and gold-plated layers cover the surfaces of the second substrate; the first substrate and the second substrate are used for impedance matching of the transmission line of 50 ohms in a coplanar waveguide mode, a 90-degree right angle exists at the corner of the transmission line, and 45-degree beveling is carried out at the right-angle bent position.

As an optimized scheme, the shell is internally provided with a thermistor and a TEC temperature control unit, the thermistor is attached to the first substrate and used for collecting the working temperature of the SLED chip, and the TEC temperature control unit is installed on the inner bottom surface of the shell and arranged with the cold surface facing upwards and used for obtaining the temperature of the SLED chip collected by the thermistor and controlling the temperature in the shell.

As an optimized scheme, the tube shell is made of Kovar alloy, the tube shell is hermetically packaged in a parallel seam welding sealing mode, an opening is formed in one end of the tube shell, a circuit board is arranged at the bottom of the tube shell and used for being connected with the bottom surfaces of the first base plate and the second base plate and being connected with an external circuit, and the overall dimension of the tube shell is 7.4mm multiplied by 5.4mm multiplied by 5.2 mm.

The invention also provides a quantum noise source generation method of the quantum noise source module based on photoelectric co-encapsulation, which comprises the following steps:

s1: generating a broad spectrum radiation beam by a superluminescent unit;

s2: the wide-spectrum radiation beam is optically coupled with the photoelectric detection unit through the free space, and the front side of a photosensitive surface of the photoelectric detection unit collects the incident wide-spectrum radiation beam and converts the incident wide-spectrum radiation beam into a radio frequency current signal;

s3, the output end of the photoelectric detection unit outputs a radio frequency current signal and transmits the radio frequency current signal to a transimpedance amplifier unit, and the input end of the transimpedance amplifier unit receives the radio frequency current signal and performs transimpedance amplification processing;

and S4, the transimpedance amplifier unit outputs the amplified radio-frequency current signal outwards.

As an optimized scheme, the super-radiation light-emitting unit is an SLED chip, the photoelectric detection unit is a high-bandwidth photoelectric detector PD chip, the light-emitting surface of the SLED chip is strictly aligned with the photosensitive surface of the PD chip, the transimpedance amplifier unit is an LNA low-noise amplifier, a wide-spectrum radiation beam output by the SLED chip is incident to the photosensitive surface of the photoelectric detector PD chip through a free space, and the photoelectric detector PD chip photoelectrically converts the wide-spectrum radiation beam to form a radio-frequency current signal which is amplified by the LNA low-noise amplifier and then output.

Compared with the prior art, the invention has the advantages that:

in the quantum noise source module based on photoelectric co-encapsulation and the quantum noise source generation method provided by the technical scheme of the invention, CPO photoelectric co-encapsulation is utilized, photoelectric chips are co-encapsulated in a shell, and the photoelectric chips are vertically interconnected to realize shorter interconnection distance and better high-frequency performance, so that the integration level is higher, the encapsulation is more compact, and the large-scale application and development of a quantum random number technology are facilitated;

according to the invention, through a space optical coupling system structure, a mode of vertical interconnection of gold-plated ceramic substrates and direct alignment of side light receiving is adopted, the key core technology of space optical path high-efficiency coupling is achieved, the high-efficiency coupling between the SLED chip and the PD chip in a micro space of 7.5mm multiplied by 5.4mm is realized, the coupling efficiency can reach 82%, and the requirement of national high-speed random optical quantum noise source chip production is met.

The invention is wholly packaged in a small-sized tube shell, reduces the influence of the environmental temperature, and simultaneously adopts the TEC refrigerator and the thermistor in the tube shell to form a temperature control loop, thereby effectively controlling the temperature of the SLED chip, effectively avoiding the influence caused by overhigh temperature and having good stability.

The invention simultaneously optimizes the packaging parasitic effect, reduces the radio frequency reflection and loss, and improves the transmission efficiency of the radio frequency transmission line.

Drawings

FIG. 1 is a schematic diagram of a position relationship structure of a quantum noise source module of the optoelectronic co-package of the present invention;

FIG. 2 is a top view of the optoelectronic co-packaged quantum noise source module of the present invention;

FIG. 3 is a schematic structural diagram of another quantum noise source module based on optoelectronic co-package provided in the present invention;

FIG. 4 is a flowchart of a method for generating a quantum noise source by a quantum noise source module based on optoelectronic co-package according to the present invention;

the circuit board comprises a shell 1, an opening 11, a circuit board 12, a first substrate 2, a SLED chip 21, a second substrate 3, a PD chip 31, an LNA low noise amplifier 32, a free space 4, a transmission line 5, a thermistor 6, a TEC temperature control unit 7 and a matching capacitor 8.

Detailed Description

Hereinafter, in order to facilitate the technical solution of the present invention for those skilled in the art to understand, further description will be made with reference to the accompanying drawings. It should be understood that the description is intended to be exemplary only, and is not intended to limit the scope of the present invention.

In the following detailed description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of the embodiments of the invention. It may be evident, however, that one or more embodiments may be practiced without these specific details. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.

The CPO photoelectric Co-packaging (Co-packaged Optics) technology is characterized in that a photoelectric chip is integrated in a package, so that the short interconnection distance, the better high-frequency performance, the smaller loss, the larger transmission bandwidth, the higher integration level and the more compact package are realized. Compared with the manufacturing scheme of the quantum random number noise source chip, the manufacturing scheme has the advantages of low cost and small volume, and is beneficial to large-scale application of the quantum random number technology.

As shown in fig. 1-2, a schematic diagram of a connection relationship between the plates of the present invention is provided, the present invention provides a quantum noise source chip module packaging structure based on a CPO photoelectric co-packaging technology, including a cavity tube 1, a first substrate 2 vertically placed and a second substrate 3 horizontally placed in the tube 1, further including a super-radiation light-emitting unit, a photoelectric detection unit and a trans-impedance amplifier unit, the super-radiation light-emitting unit is attached to an upper surface of the first substrate 2 vertically placed, the photoelectric detection unit is attached to an upper surface of the second substrate 3 horizontally placed, the first substrate 2 and the second substrate 3 are vertically arranged, a light-emitting surface of the super-radiation light-emitting unit and a photosensitive surface of the photoelectric detection unit are aligned to form a strict alignment, and a free space 4 for optical path transmission is formed between the light-emitting surface and the photoelectric detection unit, the super-radiation light-emission unit generates a wide-spectrum radiation beam which is optically coupled with the photoelectric detection unit through the free space of the optical path, the input end of the photoelectric detection unit detects and collects incident optical signals, converts the optical signals into radio frequency current signals and is used for generating quantum random number noise signals; the transimpedance amplifier unit is horizontally attached to the second substrate 3, and the input end of the transimpedance amplifier unit is connected with the output end of the photoelectric detection unit and used for performing transimpedance amplification on the radio-frequency current signal generated by the photoelectric detection unit and then outputting the radio-frequency current signal.

The technical scheme of the invention provides a quantum noise source module based on photoelectric co-encapsulation, which utilizes a CPO photoelectric co-encapsulation technology to encapsulate a super-radiation light-emitting unit and a photoelectric detection unit in a cavity tube shell, a wide-spectrum radiation beam is generated by the super-radiation light-emitting unit, the wide-spectrum radiation beam is coupled with the photoelectric detection unit through a free space of a light path, a photoelectric detector module can detect and collect the incident wide-spectrum radiation beam, a radio frequency current signal is formed through photoelectric conversion of the photoelectric detector, and the radio frequency current signal is amplified and output through a trans-impedance amplifier unit to generate a quantum random number noise signal. The invention applies CPO photoelectric co-packaging technology, realizes the mixed packaging of a plurality of relatively independent photoelectric chips, and completes the function of generating quantum random number noise signals by vertically interconnecting the photoelectric chips.

The present application will now be described in further detail with reference to the accompanying drawings and detailed description:

as shown in fig. 2, for a top view of a quantum noise source module based on optoelectronic co-package provided by an embodiment of the present invention,

in the embodiment of the invention, the super-radiation light-emitting unit is an SLED super-radiation electro-optic diode chip 21, the photoelectric detection unit is a high-bandwidth photoelectric detector PD chip 31, the amplified spontaneous radiation ASE noise power spectrum of the SLED chip has flat characteristic, and the line width of the SLED chip is very wide, reaches 10THz magnitude, is approximate to ideal white noise, and has ultrahigh random number generation rate. Therefore, in this embodiment, the SLED chip and the PD chip are adopted as the quantum entropy source of the quantum random number generator. At present, the QRNG (quantum random number generator) is developing towards miniaturization, and the generation rate, real-time performance, miniaturization and stability are key factors to be considered. The domestic SLED chip is used as a direct space efficient optical coupling mode of a naked light quantum light source and a domestic photoelectric detector chip, the requirement of nationwide high-speed random light quantum noise source chip is met, and the development of a new generation of physical noise source chip and the development of a high-speed light quantum communication chip are replaced and supported. The transimpedance amplifier unit is an LNA low noise amplifier 32, the SLED chip 21 is fixed on the first substrate 2 by gold wire bonding, and the PD chip 31 and the LNA low noise amplifier 32 are fixed on the second substrate 3 by gold wire bonding.

The light-emitting surface of the SLED chip 21 and the photosensitive surface of the PD chip 31 are arranged oppositely to form a free space 4 for light path transmission, the distance between the light-emitting surface of the SLED chip 21 and the photosensitive surface of the PD chip 31 is 50-70um, the bandwidth of the PD chip 31 is more than 3GHz, the bandwidth of the LNA low noise amplifier 32 is more than 6GHz, the SLED chip 21 spontaneously generates a wide-spectrum radiation beam which is optically coupled with the PD chip 31 through the free space of the light path, the input end of the PD chip 31 detects and collects the incident optical signal and converts the incident optical signal into a radio frequency current signal, so that the vertical interconnection between the SLED chip 21 and the PD chip 31 is realized, and the SLED chip 21 and the PD chip 31 are used for generating a quantum random number noise signal. In the designed free space optical coupling structure, the alignment transmission of the SLED chip 21 and the PD chip 31 of the optical beam transceiver is the key for realizing the alignment transmission, the SLED chip 21 emits light horizontally by a waveguide and has a certain divergence angle, the light receiving window direction of the PD chip 31 is vertical, the area of the photosensitive surface of the PD chip 31 is about 70 μm at a high transmission rate, and the light emitting and receiving directions of the two are vertical to each other by 90 ° when the two are coupled with the horizontal waveguide of the SLED chip 21. SLED chip 21 passes through the gold wire bonding to be fixed on the upper surface of first base plate 2, PD chip 31 passes through the gold wire bonding to be fixed at 3 upper surfaces of second base plate, first base plate 2 and 3 vertical arrangements of second base plate, the play plain noodles of SLED chip 21 and the receipts plain noodles of PD chip are openly aimed at and are arranged, can reduce the loss that the light beam produced when penetrating waveguide chip back through the intermediate medium, the effectual space light path coupling efficiency that provides, the following is for using PD chip 31 to receive the plain noodles and be 70um, adopt the front to aim at simulation result data when receiving light:

parameter(s)	Type of value	Unit of
			FFP (horizontal)	32	deg.
FFP (vertical)	32	deg.
			Wavelength of light	1550	nm
PD light-receiving surface	70	um
			Coupling efficiency	82％
Distance from chip to PD	70	um

Through measurement and calculation, optical coupling is carried out by adopting a mode of direct front alignment, the spatial light path coupling efficiency reaches 82%, the requirement of high-speed random light quantum noise source chip production in China is met, the coupling efficiency reaches more than 80%, and the problem of high-efficiency spatial coupling efficiency of a photoelectric chip in a micro-space environment is solved.

The LNA low noise amplifier 32 is horizontally attached to the second substrate 3, an input end of the LNA low noise amplifier 32 is connected to an output end of the PD chip 31, and is used for performing transimpedance amplification on a radio frequency current signal generated by the PD chip 31 and outputting the radio frequency current signal, and bottom surfaces of the first substrate 2 and the second substrate 3 are used for being connected to an external circuit.

The first substrate 2 and the second substrate 3 are aluminum nitride ceramic substrates, gold-plated layers cover the surfaces of the second substrate 3, and the gold-plated layers are covered to facilitate printing of the radio frequency transmission line.

In this embodiment, the bandwidth of the PD chip 31 is 3GHz or more, and the bandwidth of the LNA low noise amplifier 32 is 6GHz or more.

The radio frequency current signal of the embodiment of the invention is transmitted by adopting coplanar waveguide feed, thus being beneficial to reducing the radio frequency space radiation and ensuring better radio frequency impedance control. The first substrate 2 and the second substrate 3 are printed with a plurality of microstrip feed lines 5, the characteristic impedance of the microstrip feed lines is 50 ohms, a 90-degree right angle exists at the corner of the microstrip feed line 5, 45-degree outward beveling is carried out at the right-angle bent part, and the discontinuity of the characteristic impedance at the right-angle bent part is minimum at the moment, so that the signal transmission characteristic can reach the best state.

As shown in fig. 3, as a more optimized solution, the present invention further includes a thermistor 6, a TEC temperature control unit 7, and a matching capacitor 8 in the package 1, the thermistor 6 is attached to the first substrate 2 for collecting the operating temperature of the SLED chip 21, the TEC temperature control unit 7 is mounted on the inner bottom surface of the package and arranged with its cold surface facing upward for obtaining the temperature of the SLED chip 21 collected by the thermistor and controlling the temperature in the package 1, since the LNA low noise amplifier 32 generates more heat during operation, and the SLED chip 21 belongs to a temperature sensitive chip, and is susceptible to temperature, and the output power at high and low temperatures deviates from the normal temperature, in order to ensure stable and reliable operation of the SLED chip 21, a temperature control loop is formed in the package 1 by using the TEC temperature control unit 7 and the thermistor 6, the temperature of the SLED chip 21 can be effectively controlled, the influence caused by overhigh temperature is effectively avoided, and the stability is good, so that the problems of large overall dimension and high power consumption of the existing light-emitting diode device are solved.

In the embodiment, due to the heat dissipation requirement, the tube shell 1 is made of kovar alloy with high heat conductivity and matched thermal expansion coefficient, the alloy has the linear expansion coefficient close to that of hard glass within the range of 20-450 ℃, and the alloy is effectively sealed and matched with the hard glass, so that the welding and the fusion can be easily carried out.

The tube 1 adopts the sealed mode of parallel seam welding to carry out airtight encapsulation, produces high temperature at the welded part, and the chip temperature in the shell inside is low, therefore can not produce the thermal shock to the chip, is equipped with circuit board 12 in the bottom of tube 1 for be connected with the bottom surface of first base plate 2 and second base plate 3, and be connected with external circuit, the final overall dimension of tube is 7.4mm 5.4mm 5.2 mm. The integral structure of the device realizes mixed packaging of a plurality of relatively independent photoelectric chips by applying a CPO photoelectric co-packaging technology, realizes autonomous controllability of a photon source module miniaturization packaging technology, and fundamentally solves the problems of high speed, miniaturization and system stabilization of a quantum random number generator.

As shown in fig. 4, the method for generating a quantum noise source for a quantum noise source module based on optoelectronic co-package provided by the present invention includes:

step 1: generating a broad spectrum radiation beam by a superluminescent unit;

step 2: the wide-spectrum radiation beam is spatially coupled with the photoelectric detection unit through the optical path free space 4, and the front surface of the photosensitive surface of the photoelectric detection unit collects the incident wide-spectrum radiation beam and converts the incident wide-spectrum radiation beam into a radio frequency current signal;

step 3, the output end of the photoelectric detection unit outputs a radio frequency current signal and transmits the radio frequency current signal to the transimpedance amplifier unit, and the input end of the transimpedance amplifier unit receives the radio frequency current signal and performs transimpedance amplification processing;

and 4, outputting the amplified radio frequency current signal to the outside by the trans-impedance amplifier unit.

The super-radiation light-emitting unit is an SLED chip 21, the photoelectric detection unit is a high-bandwidth photoelectric detector PD chip 31, the light-emitting surface of the SLED chip 21 is strictly aligned with the photosensitive surface of the PD chip 31, the transimpedance amplifier unit is an LNA low-noise amplifier 32, the wide-spectrum radiation beam output by the super-radiation SLED chip 21 is optically coupled with the photoelectric detector PD chip 31 through a free space 4 and enters the photosensitive surface of the photoelectric detector PD chip 31, and the photoelectric detector PD chip 31 converts the wide-spectrum radiation beam into a radio-frequency current signal which is amplified by the LNA low-noise amplifier 32 and then output.

As can be seen from the above description, in the quantum noise source module and the quantum noise source generation method based on the optoelectronic co-package provided in the technical scheme of the present invention, the CPO optoelectronic co-package is used to co-package the optoelectronic chips in the housing, and the optoelectronic chips are vertically interconnected by being arranged opposite to each other, so that a shorter interconnection distance and a better high-frequency performance are achieved, the integration level is higher, the package is more compact, and the present invention is favorable for the large-scale application and development of the quantum random number technology. According to the invention, through a space optical coupling system structure, a mode of vertical interconnection of gold-plated ceramic substrates and direct alignment of side light receiving is adopted, the key core technology of space optical path high-efficiency coupling is achieved, the high-efficiency coupling between the SLED chip and the PD chip in a micro space of 7.5mm multiplied by 5.4mm is realized, the coupling efficiency can reach 82%, and the requirement of national high-speed random optical quantum noise source chip production is met. The invention is wholly packaged in a small-sized tube shell, reduces the influence of the environmental temperature, and simultaneously adopts the TEC refrigerator and the thermistor in the tube shell to form a temperature control loop, thereby effectively controlling the temperature of the SLED chip, effectively avoiding the influence caused by overhigh temperature and having good stability. The invention simultaneously optimizes the packaging parasitic effect, reduces the radio frequency reflection and loss, and improves the transmission efficiency of the radio frequency transmission line.

The above-mentioned embodiments are merely illustrative of the preferred embodiments of the present invention, and do not limit the scope of the present invention, and various modifications and improvements of the technical solution of the present invention by those skilled in the art should fall within the protection scope defined by the claims of the present invention without departing from the spirit of the present invention.