阅读说明：本技术 一种基于铁电膜的实时可控波导结构 (Real-time controllable waveguide structure based on ferroelectric film ) 是由 胡明哲 于 2021-02-23 设计创作，主要内容包括：本发明涉及一种基于铁电膜的实时可控波导结构,属于波导技术领域。本实时可控波导结构包括：介质板；金属微带,金属微带固定连接在介质板的一面上,金属微带的中部的两侧边均设有多个凹槽,多个凹槽构成人工表面等离激元结构；周期性排布的金属块,金属块与凹槽一一对应,金属块分别设在对应凹槽内,并与介质板的一面固定连接；多个铁电膜矩形谐振器,铁电膜矩形谐振器设在金属块的两侧,铁电膜矩形谐振器与对应凹槽的槽壁之间留有耦合间隙。本实时可控波导结构可实时调控其传输通带带宽,而且可实现宽频段阻抗匹配,降低反射损耗。(The invention relates to a real-time controllable waveguide structure based on a ferroelectric film, and belongs to the technical field of waveguides. This real-time controllable waveguide structure includes: a dielectric plate; the metal microstrip is fixedly connected to one surface of the dielectric plate, a plurality of grooves are formed in two side edges of the middle of the metal microstrip, and the grooves form an artificial surface plasmon structure; the metal blocks are arranged periodically, correspond to the grooves one by one, are arranged in the corresponding grooves respectively, and are fixedly connected with one surface of the dielectric plate; and the ferroelectric film rectangular resonators are arranged on two sides of the metal block, and a coupling gap is reserved between each ferroelectric film rectangular resonator and the corresponding groove wall of the corresponding groove. The real-time controllable waveguide structure can regulate and control the transmission passband bandwidth in real time, can realize wide-band impedance matching and reduce reflection loss.)

1. A ferroelectric film based real-time controllable waveguide structure, comprising:

a dielectric sheet (1);

the metal micro-strip is fixedly connected to one surface of the dielectric plate (1), a plurality of grooves (4) are formed in two side edges of the middle of the metal micro-strip, and the grooves (4) form an artificial surface plasmon structure;

the metal blocks (3) are arranged periodically, the metal blocks (3) correspond to the grooves (4) one by one, and the metal blocks (3) are respectively arranged in the corresponding grooves (4) and fixedly connected with one surface of the dielectric plate (1);

the metal block comprises a plurality of ferroelectric film rectangular resonators (7), the ferroelectric film rectangular resonators (7) are arranged on two sides of the metal block (3), every two ferroelectric film rectangular resonators (7) are located in one groove (4), a coupling gap (8) is reserved between each ferroelectric film rectangular resonator (7) and the groove wall corresponding to the corresponding groove (4), and the resonance frequency of each ferroelectric film rectangular resonator (7) is changed when an external electric field is loaded.

2. The real-time controllable waveguide structure based on ferroelectric film according to claim 1, wherein a plurality of said grooves (4) are mirror-symmetrically arranged with the length direction of the metal microstrip as the central axis, and two mirror-symmetrically arranged grooves (4) are a group.

3. The real-time controllable waveguide structure based on ferroelectric film according to claim 2, characterized in that the number of the ferroelectric films on the ferroelectric film rectangular resonators (7) is three, the dielectric constants of the three ferroelectric films are arranged in an arithmetic series, and one ferroelectric film rectangular resonator (7) is arranged in each group of the grooves (4).

4. The real-time controllable waveguide structure based on ferroelectric film according to claim 3, wherein three kinds of the ferroelectric film rectangular resonators (7) are a first ferroelectric film rectangular resonator (11), a second ferroelectric film rectangular resonator (12) and a third ferroelectric film rectangular resonator (13), and the first ferroelectric film rectangular resonator (11), the second ferroelectric film rectangular resonator (12), the third ferroelectric film rectangular resonator (13), the second ferroelectric film rectangular resonator (12) and the first ferroelectric film rectangular resonator (11) are sequentially arranged in the middle of the metal microstrip from left to right.

5. The real-time controllable waveguide structure based on ferroelectric film as in claim 4, wherein the dielectric constant of the ferroelectric film on the first ferroelectric film rectangular resonator (11) is 700-.

6. The real-time controllable waveguide structure based on the ferroelectric film according to claim 1, further comprising a loading bias pad (9) and a high-resistance strip line (10), wherein one end of the high-resistance strip line (10) is fixedly connected with one end of the metal block (3) provided with the ferroelectric film rectangular resonator (7), the other end of the high-resistance strip line (10) is fixedly connected with the loading bias pad (9), and the loading bias pad (9) is fixedly connected with one surface of the dielectric plate (1).

7. The real-time controllable waveguide structure based on the ferroelectric film according to claim 1, wherein the metal microstrip comprises an artificial surface plasmon section (5), two transition sections (6) and two transmission sections (2), one end of each of the two transition sections (6) is connected to two ends of the artificial surface plasmon section (5), the other end of each of the two transition sections (6) is connected to one end of each of the two transmission sections (2), the other ends of the two transmission sections (2) are flush with edges of two sides of the dielectric plate (1), and the groove (4) is located in the artificial surface plasmon section (5).

8. The real-time controllable waveguide structure based on the ferroelectric film according to claim 7, wherein a plurality of transition grooves (15) are disposed on both sides of the two transition sections (6), and the plurality of transition grooves (15) are disposed in parallel along a length direction corresponding to the transition sections (6) and are arranged in mirror symmetry with the length direction of the transition sections (6) as a central axis.

9. The ferroelectric film based real-time controllable waveguide structure according to claim 8, wherein a groove bottom of the transition groove (15) is gradually inclined toward the central axis along the transition section (6) toward the artificial surface plasmon section (5), and a groove bottom depth of the transition groove (15) is gradually increased along the transition section (6) toward the artificial surface plasmon section (5).

10. The real-time controllable waveguide structure based on the ferroelectric film according to any one of claims 1-9, wherein both sides of both ends of the metal microstrip are provided with a curved edge metal ground (14), and the curved edge metal ground (14) is fixedly connected with one surface of the dielectric plate (1).

Technical Field

The invention belongs to the technical field of waveguides, and particularly relates to a real-time controllable waveguide structure based on a ferroelectric film.

Background

With the advent of the big data era, the wireless communication information capacity has increased dramatically, and wireless communication systems are required to produce microwave devices with higher integration, more stable operating characteristics, and more diversified functions.

However, the function of the conventional analog microwave device is fixed along with the completion of processing, and cannot be regulated in real time, which is not favorable for the microwave device to adapt to complex application.

Disclosure of Invention

The invention provides a real-time controllable waveguide structure based on a ferroelectric film, which can adjust and control the transmission passband bandwidth in real time, realize wide-band impedance matching and reduce reflection loss.

The technical scheme for solving the technical problems is as follows: a ferroelectric film based real-time controllable waveguide structure comprising:

a dielectric plate;

the metal micro-strip is fixedly connected to one surface of the dielectric plate, a plurality of grooves are formed in two side edges of the middle of the metal micro-strip, and the grooves form an artificial surface plasmon structure;

the metal blocks are arranged periodically, correspond to the grooves one by one, are arranged in the corresponding grooves respectively, and are fixedly connected with one surface of the dielectric plate;

the metal block comprises a plurality of ferroelectric film rectangular resonators, the ferroelectric film rectangular resonators are arranged on two sides of the metal block, every two ferroelectric film rectangular resonators are located in one groove, a coupling gap is reserved between each ferroelectric film rectangular resonator and the groove wall corresponding to the groove, and the resonance frequency of each ferroelectric film rectangular resonator changes when an external electric field is loaded.

The invention has the beneficial effects that: (1) through the matching effect of the arranged groove and the ferroelectric film rectangular resonator, the dielectric constant of the ferroelectric film is changed under the action of loading an external electric field, so that the resonant frequency of the whole ferroelectric film rectangular resonator is changed, the band-edge frequency of the waveguide is moved, and the flexible control of the waveguide bandwidth is realized;

(2) through the arranged coupling gap, the applied direct-current bias voltage can not reach the main metal microstrip, and the interference to alternating-current signals can not be caused, so that the operation of the real-time controllable waveguide structure is ensured;

(3) the real-time controllable waveguide structure has the advantages of simple structure, low transmission loss, flexible and controllable bandwidth and strong anti-electromagnetic interference capability, and is suitable for the development of microwave integrated circuits.

On the basis of the technical scheme, the invention can be further improved as follows.

Furthermore, the grooves are arranged in a mirror symmetry mode by taking the length direction of the metal micro-strip as a central axis, and the two grooves arranged in the mirror symmetry mode are in a group.

The beneficial effect of adopting the further scheme is that: the microwave cutoff effect is better.

Furthermore, the number of the ferroelectric films on the ferroelectric film rectangular resonator is three, the dielectric constants of the three ferroelectric films are arranged in an arithmetic progression manner, and one ferroelectric film rectangular resonator is arranged in each group of the grooves.

The beneficial effect of adopting the further scheme is that: the resonance frequency of the ferroelectric film rectangular resonator can be independently adjusted, so that the adjustment is more convenient, and the bandwidth of the metal microstrip can be adjusted and controlled in real time.

Further, the three ferroelectric film rectangular resonators are a first ferroelectric film rectangular resonator, a second ferroelectric film rectangular resonator and a third ferroelectric film rectangular resonator, and the first ferroelectric film rectangular resonator, the second ferroelectric film rectangular resonator, the third ferroelectric film rectangular resonator, the second ferroelectric film rectangular resonator and the first ferroelectric film rectangular resonator are sequentially arranged in the middle of the metal microstrip from left to right.

The beneficial effect of adopting the further scheme is that: the method is convenient for real-time segmented regulation and control, and has better regulation and control effect.

Further, the dielectric constant of the ferroelectric film on the first ferroelectric film rectangular resonator is 100-.

The beneficial effect of adopting the further scheme is that: the bandwidth of the artificial plasmon transmission line can be regulated and controlled in real time, the gradual change of the impedance can be realized, and the impedance matching can be realized in a wide frequency band range.

The device further comprises a loading bias pad and a high-resistance strip line, wherein one end of the high-resistance strip line is fixedly connected with one end of the metal block provided with the ferroelectric film rectangular resonator, the other end of the high-resistance strip line is fixedly connected with the loading bias pad, and the loading bias pad is fixedly connected with one surface of the dielectric plate.

The beneficial effect of adopting the further scheme is that: the bias voltage is conveniently applied, and the high-resistance strip line can block alternating current signals, so that interference on direct current bias voltage is avoided.

Further, the metal microstrip comprises an artificial surface plasmon section, two transition sections and two transmission sections, one end of each transition section is connected with two ends of the artificial surface plasmon section, the other end of each transition section is connected with one end of each transmission section, the other end of each transmission section is flush with the edges of two sides of the dielectric plate, and the groove is located in the artificial surface plasmon section.

The beneficial effect of adopting the further scheme is that: and electromagnetic field transmission is facilitated.

Furthermore, two all be equipped with a plurality of transition grooves on the both sides of changeover portion, it is a plurality of the transition groove sets up side by side along corresponding the length direction of changeover portion to use the length direction of changeover portion sets up as axis mirror symmetry.

The beneficial effect of adopting the further scheme is that: the gradual transformation of the microwave mode is realized through the arranged transition groove, and the strong reflection of the electromagnetic wave can be prevented.

Further, the groove bottom of the transition groove is inclined towards the direction of the artificial surface plasmon section towards the central axis gradually along the transition section, and the depth of the groove bottom of the transition groove is gradually increased towards the direction of the artificial surface plasmon section along the transition section.

The beneficial effect of adopting the further scheme is that: the smooth transition of the electromagnetic field in the transmission section and the artificial surface plasmon section is realized.

Furthermore, both sides of both ends of the metal microstrip are provided with curved edge metal grounds which are fixedly connected with one surface of the dielectric plate.

The beneficial effect of adopting the further scheme is that: the binding effect on the electromagnetic field is improved.

Drawings

FIG. 1 is a schematic diagram of a real-time controllable waveguide structure according to the present invention;

FIG. 2 is an enlarged view of a portion of the real time controllable waveguide structure of the present invention;

FIG. 3 is a graph of the dispersion characteristics of the unit structure of the real time controllable waveguide structure of the present invention;

FIG. 4 shows S of a sample of a real-time controllable waveguide structure according to the present invention₂₁The variation of the parameter curve with the dielectric constant of the ferroelectric film;

FIG. 5 shows S of a sample of a real-time controllable waveguide structure according to the present invention₁₁The variation of the parameter curve with the dielectric constant of the ferroelectric film;

FIG. 6 is a graph of group delay characteristics of a sample of a real-time controllable waveguide structure according to the present invention;

FIG. 7 is a diagram of the normal direction distribution of the electric field of a real-time controllable waveguide structure sample according to the present invention at an operating frequency of 8 GHz;

FIG. 8 is a diagram showing the normal direction distribution of the electric field of a real-time controllable waveguide structure sample of the present invention at an operating frequency of 16 GHz.

In the drawings, the components represented by the respective reference numerals are listed below:

1. the device comprises a dielectric plate, 2, a transmission section, 3, a metal block, 4, a groove, 5, an artificial surface plasmon section, 6, a transition section, 7, a ferroelectric film rectangular resonator, 8, a coupling gap, 9, a loading bias pad, 10, a high-resistance strip line, 11, a first ferroelectric film rectangular resonator, 12, a second ferroelectric film rectangular resonator, 13, a third ferroelectric film rectangular resonator, 14, a curved edge metal ground, 15 and a transition groove.

Detailed Description

The principles and features of this invention are described below in conjunction with the following drawings, which are set forth by way of illustration only and are not intended to limit the scope of the invention.

Examples

As shown in fig. 1 and fig. 2, the present embodiment provides a real-time controllable waveguide structure based on a ferroelectric film, comprising: the device comprises a dielectric plate 1, metal micro-strips, metal blocks 3 which are periodically arranged and a plurality of ferroelectric film rectangular resonators 7.

Metal microstrip fixed connection is on the one side of dielectric-slab 1, and the both sides limit in the middle part of metal microstrip all is equipped with the recess 4 that a plurality of cycles were arranged, and a plurality of recesses 4 constitute artifical surface plasmon structure. The metal blocks 3 correspond to the grooves 4 one by one, and the metal blocks 3 are respectively arranged in the corresponding grooves 4 and fixedly connected with one surface of the dielectric plate 1. The ferroelectric film rectangular resonators 7 are arranged on two sides of the metal block 3, every two ferroelectric film rectangular resonators 7 are positioned in one groove 4, a coupling gap 8 is reserved between each ferroelectric film rectangular resonator 7 and the groove wall of the corresponding groove 4, and the resonance frequency of the ferroelectric film rectangular resonators 7 is changed when an external electric field is loaded.

Wherein a plurality of grooves 4 are arranged in an array along the length direction of the metal microstrip. Each metal block 3 is positioned at the middle position of the corresponding groove 4, and the distance from each metal block 3 to the wall of the groove 4 is the same. One of the grooves 4 is provided with a metal block 3 and two ferroelectric film rectangular resonators 7, and the two ferroelectric film rectangular resonators 7 are located on two sides of the corresponding metal block 3. The transmission passband width of the waveguide is adjusted in real time by the characteristic that the dielectric constant can be continuously changed under the condition that the ferroelectric film rectangular resonator 7 is externally loaded with a bias voltage, and the band edge frequency of a transmission curve is adjusted and controlled in real time.

The technical scheme of the embodiment can produce the following effects that the dielectric constant of the ferroelectric film is changed under the action of loading an external electric field through the matching action of the arranged groove 4 and the ferroelectric film rectangular resonator 7, so that the resonant frequency of the whole ferroelectric film rectangular resonator 7 is changed, the band-edge frequency of the waveguide is moved, and the flexible control of the waveguide bandwidth is realized. Through the arranged coupling gap 8, the applied direct current bias voltage can not reach the main metal microstrip, and the interference to alternating current signals can not be caused, so that the operation of the real-time controllable waveguide structure is ensured. The real-time controllable waveguide structure has the advantages of simple structure, low transmission loss, flexible and controllable bandwidth and strong anti-electromagnetic interference capability, and is suitable for the development of microwave integrated circuits.

Preferably, in this embodiment, the plurality of grooves 4 are arranged in mirror symmetry with the length direction of the metal microstrip as a central axis, and two grooves 4 arranged in mirror symmetry form a group. So that the microwave cutoff effect is better.

Preferably, in this embodiment, the number of the ferroelectric films on the ferroelectric film rectangular resonator 7 is three, the dielectric constants of the three ferroelectric films are arranged in an arithmetic progression, and one ferroelectric film rectangular resonator 7 is arranged in each group of the grooves 4. The three ferroelectric film rectangular resonators 7 can be used for independently adjusting the resonant frequency of one ferroelectric film rectangular resonator 7, so that the adjustment is more convenient, and the bandwidth of the metal microstrip can be adjusted and controlled in real time. Meanwhile, the dielectric constant of the ferroelectric film is arranged according to the arithmetic progression, so that the impedance gradual change can be realized, and the impedance matching can be realized in a wide frequency band range.

Preferably, in this embodiment, the three ferroelectric film rectangular resonators 7 are a first ferroelectric film rectangular resonator 11, a second ferroelectric film rectangular resonator 12, and a third ferroelectric film rectangular resonator 13, and the first ferroelectric film rectangular resonator 11, the second ferroelectric film rectangular resonator 12, the third ferroelectric film rectangular resonator 13, the second ferroelectric film rectangular resonator 12, and the first ferroelectric film rectangular resonator 11 are sequentially disposed in the middle of the metal microstrip from left to right.

In the total of 12 grooves 4, 6 groups of grooves 4 are arranged in the ferroelectric film rectangular resonator 7, so that the microwaves sequentially pass through the grooves 4 corresponding to the first ferroelectric film rectangular resonator 11, the second ferroelectric film rectangular resonator 12, the third ferroelectric film rectangular resonator 13, the second ferroelectric film rectangular resonator 12 and the first ferroelectric film rectangular resonator 11. Therefore, the real-time segmented regulation and control are convenient, and the regulation and control effect is better.

Preferably, in the embodiment, the dielectric constant of the ferroelectric film on the first ferroelectric film rectangular resonator 11 is 100-. The bandwidth of the artificial plasmon transmission line can be regulated and controlled in real time, the gradual change of the impedance can be realized, and the impedance matching can be realized in a wide frequency band range.

Preferably, in this embodiment, the dielectric plate further includes a loading bias pad 9 and a high-resistance strip line 10, one end of the high-resistance strip line 10 is fixedly connected to one end of the metal block 3 provided with the ferroelectric film rectangular resonator 7, the other end of the high-resistance strip line 10 is fixedly connected to the loading bias pad 9, and the loading bias pad 9 is fixedly connected to one surface of the dielectric plate 1. The bias voltage is conveniently applied by providing a loading bias pad 9 to connect to an external voltage. Wherein the high impedance strip line 10 is capable of blocking ac signals so as not to interfere with dc bias.

Preferably, in this embodiment, the metal microstrip includes artificial surface plasmon section 5, two transition sections 6 and two transmission sections 2, one end of each of the two transition sections 6 is connected to both ends of artificial surface plasmon section 5, the other end of each of the two transition sections 6 is connected to one end of each of the two transmission sections 2, the other end of each of the two transmission sections 2 is flush with the edges of both sides of dielectric plate 1, and groove 4 is located in artificial surface plasmon section 5. Wherein both the transition sections 63 and both the transmission sections 22 are symmetrically disposed with respect to the artificial surface plasmon section 54. Wherein the transmission section 22 is used for electromagnetic field input and electromagnetic field output, wherein the transition section 63 enables smooth transition of the electromagnetic field.

Preferably, in this embodiment, a plurality of transition grooves 15 are respectively disposed on two side edges of the two transition sections 6, and the plurality of transition grooves 15 are disposed in parallel along the length direction of the corresponding transition section 6, and are arranged in mirror symmetry with the length direction of the transition section 6 as a central axis. In which a gradual change of the microwave mode is achieved by the provision of the excess groove 15, which can prevent strong reflection of electromagnetic waves.

Preferably, in this embodiment, the groove bottom of the transition groove 15 gradually inclines toward the central axis along the transition section 6 toward the artificial surface plasmon section 5, and the groove bottom depth of the transition groove 15 gradually increases along the transition section 6 toward the artificial surface plasmon section 5. The smooth transition of the electromagnetic field in the transmission section 2 and the artificial surface plasmon section 5 is realized, and the strong microwave electric field reflection caused by the mismatching of the mode and the impedance when the electromagnetic field is converted from the quasi-TEM mode into the artificial plasmon mode is avoided.

Preferably, in this embodiment, both sides of both ends of the metal microstrip are provided with a curved edge metal ground 14, and the curved edge metal ground 14 is fixedly connected with one surface of the dielectric plate 1. Four of which are curved-edge metal lands 14. The binding effect on the electromagnetic field is improved.

Preferably, in this embodiment, the thickness of the dielectric plate 1 is 0.05-2.0mm, the length of the artificial surface plasmon section 5 is 10-80mm, corresponding to L3 on fig. 1, the depth of the groove 4 is 0.05-6.0mm, the width of the groove 4 is 0.15-5 mm, the distance between two adjacent grooves 4 is 0.5-5 mm, the length of the metal block 3 is 0.02-5.0 mm, the width is 0.05-4.8 mm, the thickness of the ferroelectric film is 0.001-0.02 mm, and the relative dielectric constant of the ferroelectric film is 900-100. The length of the transition section 6 is 10-40mm, corresponding to L2 on fig. 1, and the length of the transfer section 2 is 10-30mm, corresponding to L1 on fig. 1. The width of the transition groove 15 is 0.15-2.5 mm, the depth is 0.05-6.0mm, and the distance between two adjacent transition grooves 15 is 0.5-5 mm. Wherein the groove and the transition groove may be rectangular grooves.

The working principle is as follows: the electromagnetic field of the quasi-TEM mode is transmitted to the transition section 6 from the transmission section 2 on the left, the electromagnetic field of the artificial plasmon mode gradually changes in the transition section 6, the electromagnetic fields of the quasi-TEM mode and the SSPPs mode coexist in the transition section 6, when the electromagnetic field is transmitted to the artificial surface plasmon section 5, the electromagnetic field is completely converted into the electromagnetic field of the SSPPs mode and is transmitted in the artificial surface plasmon section 5, and when the electromagnetic field passes through the groove 4 provided with the ferroelectric film rectangular resonator 7, the resonance of the ferroelectric film rectangular resonator 7 enables the cutoff frequency of the artificial surface plasmon section 5 to move, so that the bandwidth of the waveguide is regulated and controlled in real time. When an external electric field is applied to the ferroelectric film rectangular resonator 7, the dielectric constant of the ferroelectric film is continuously changed, so that the resonant frequency of the ferroelectric film rectangular resonator 7 is reduced, and the band-edge frequency of the transmission curve and the bandwidth of the waveguide are regulated and controlled in real time.

When the electromagnetic field propagates in the transmission section 2, the mode of the electromagnetic field in the section is a quasi-TEM mode, and the mode electromagnetic field is confined in the dielectric plate 1 between the transmission section 2 and the curved-edge metal ground 14. When the electromagnetic field propagates in the transition section 6, the mode of the electromagnetic field in the section is a quasi-TEM mode coexisting with an artificial plasmon mode, wherein the quasi-TEM mode electromagnetic field is bound in the dielectric plate 1 between the transition section 6 and the curved edge metal ground 14, and the artificial plasmon mode electromagnetic field is bound around the transition groove 15. When an electromagnetic field propagates in the artificial surface plasmon section 5, the mode of the electromagnetic field in the section is an artificial plasmon mode, the mode electromagnetic field is bound around the groove 4 loaded by the metal block 3, and the electromagnetic anti-interference capability of the waveguide can be effectively improved.

According to the invention, the metal block 3 arranged on the artificial surface plasmon polariton section 5 is loaded at the gap between the two by using the ferroelectric film rectangular resonator 7, and the dielectric constant of the ferroelectric film can be controlled by applying bias voltage, so that the resonant frequency of the ferroelectric film rectangular resonator 7 can be continuously controlled, the waveguide bandwidth can be regulated and controlled in a transmission curve in real time, and the multi-functionalization is realized. In addition, this controllable waveguide structure in real time can let the electromagnetic field be tied around recess 4 or excessive recess 15 when the plane is transmitted to electromagnetic interference that appears because of the interval is too little when greatly reduced many transmission lines transmit makes this controllable waveguide structure in real time interference killing feature strengthen greatly, thereby can reduce the interval between microwave integrated circuit's the metal microstrip, in order to realize the miniaturization of device. Moreover, the bandwidth characteristic of the real-time controllable waveguide structure can be adjusted by the ferroelectric film rectangular resonator 7 loaded with bias voltage and the depth of the periodic groove. The real-time controllable waveguide structure has the working capacity of various communication systems, the number of devices in a communication system can be effectively reduced, and the volume of the system is reduced.

The following is a case of performing specific measurement using the above-described example.

A sample of a real-time controllable waveguide structure based on ferroelectric films was prepared according to the above example, the geometrical parameters of the parts of which are shown in the table below.

The dielectric plate 1 of the sample adopts a substrate with a dielectric constant of 2.2, and the calculation results of finite integrals for the unit structure dispersion characteristics, the waveguide scattering parameters and the electromagnetic field distribution of the real-time controllable waveguide structure sample are shown in fig. 3-8.

Fig. 3 is a dispersion characteristic diagram of a unit structure, listing cut-off frequency diagrams of light and a mode of a unit structure of the real-time controllable waveguide structure sample, and it can be seen that a unit structure has a frequency cut-off mode.

S in FIG. 4₁₁As the filter reflection coefficient, S in FIG. 5₂₁Is the filter transmission coefficient. The transmission reflection characteristics in the working frequency band of the sample are enumerated.

After the ferroelectric film rectangular resonator 7 is loaded with bias voltage, the band-edge frequency of the real-time controllable waveguide structure sample gradually changes along with the dielectric constant, and the pass band width gradually decreases along with the increase of the relative dielectric constant of the ferroelectric film, namely the band-edge cut-off frequency of the real-time controllable waveguide structure sample can move along with the external bias voltage in real time.

Taking the relative dielectric constant of the ferroelectric film on the third ferroelectric film rectangular resonator 13 as 400, the relative dielectric constant of the ferroelectric film on the second ferroelectric film rectangular resonator 12 as 300, and the relative dielectric constant of the ferroelectric film on the first ferroelectric film rectangular resonator 11 as 200, for example, the-3 dB passband range is 2.44-13.29GHz, the in-band reflection coefficients are all less than-9.5 dB, and the ripple jitter is less than 1.3 dB.

The dielectric constant of the ferroelectric film can be dynamically and continuously adjusted with the application of bias voltage, when the relative dielectric constant of the ferroelectric film on the third ferroelectric film rectangular resonator 13 is gradually increased from 400 to 900, the relative dielectric constant of the ferroelectric film on the second ferroelectric film rectangular resonator 12 is gradually increased from 300 to 800, the relative dielectric constant of the ferroelectric film on the first ferroelectric film rectangular resonator 11 is gradually increased from 200 to 700, and the band-edge frequency on the waveguide-3 dB is gradually decreased from 13.45GHz to 13.02GHz, thereby realizing the dynamic control of the waveguide bandwidth.

As can be seen from fig. 6, the group delay in the waveguide passband is less than 0.8ns, and the signal distortion is small.

For the real-time controllable waveguide structure sample, the relative dielectric constant of the ferroelectric film on the third ferroelectric film rectangular resonator 13 is 400, the relative dielectric constant of the ferroelectric film on the second ferroelectric film rectangular resonator 12 is 300, the relative dielectric constant of the ferroelectric film on the first ferroelectric film rectangular resonator 11 is 200, and the surface electric field distribution in the state of operating at 8GHz is calculated, and the result is shown in fig. 7. It can be seen from fig. 7 that when the real-time controllable waveguide structure sample works in the pass band, electromagnetic energy can be smoothly transmitted to the output end through the plasmon transmission line, and the insertion loss is less than 1.0 dB.

For the real-time controllable waveguide structure sample, the relative dielectric constant of the ferroelectric film on the third ferroelectric film rectangular resonator 13 is 400, the relative dielectric constant of the ferroelectric film on the second ferroelectric film rectangular resonator 12 is 300, the relative dielectric constant of the ferroelectric film on the first ferroelectric film rectangular resonator 11 is 200, and the surface electric field distribution in the 16GHz stop band state is calculated, as shown in fig. 8, it can be seen from fig. 8 that, at this time, the frequency is located in the stop band of the real-time controllable waveguide structure sample, the electromagnetic field energy cannot pass through the real-time controllable waveguide structure sample, and the electric field energy is localized around the transition groove 15, and the diffusion to the periphery is small, so that the capability of the real-time controllable waveguide structure sample for resisting electromagnetic interference is greatly enhanced.

In the description of the present invention, it is to be understood that the terms "center", "length", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "inner", "outer", "peripheral side", "circumferential", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention.

In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.

The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.