阅读说明：本技术 一种闪烁探测器 (Scintillation detector ) 是由 孙希磊 张大力 安正华 李新乔 熊少林 龚轲 文向阳 蔡策 常治 陈刚 陈灿 于 2021-03-15 设计创作，主要内容包括：本发明提供了一种基于SiPM光电倍增管的闪烁探测器,涉及核辐射探测设备技术领域,解决了闪烁体与SiPM阵列不匹配的技术问题。该基于SiPM光电倍增管的闪烁探测器,包括圆柱形闪烁体和呈圆形阵列设置在闪烁体上的多片SiPM光电倍增管,SiPM光电倍增管数量为2的倍数。本发明将SiPM光电倍增管按照一定角度圆形均匀排列,解决了与圆形闪烁体配合的问题,将所有的SiPM光电倍增管电路设计成一路输出,采用分组求和电路,在保持信噪比基础上,实现单通道读出,和传统的PMT使用方法相同,更方便的进行PMT替换；通过在SiPM光电倍增管间隙处设置漫反射膜,提高光子收集效率和均匀性。(The invention provides a scintillation detector based on an SiPM photomultiplier, relates to the technical field of nuclear radiation detection equipment, and solves the technical problem that a scintillator is not matched with an SiPM array. This scintillation detector based on SiPM photomultiplier includes cylindrical scintillator and is the multiple-disc SiPM photomultiplier of circular array setting on the scintillator, and SiPM photomultiplier quantity is the multiple of 2. The SiPM photomultiplier is circularly and uniformly arranged according to a certain angle, the problem of matching with a circular scintillator is solved, all SiPM photomultiplier circuits are designed into one output, a grouping summation circuit is adopted, single-channel reading is realized on the basis of keeping the signal-to-noise ratio, and PMT replacement is more conveniently carried out as the traditional PMT using method is the same; the diffuse reflection film is arranged at the gap of the SiPM photomultiplier, so that the photon collection efficiency and uniformity are improved.)

1. The utility model provides a scintillation detector based on SiPM photomultiplier which characterized in that, includes cylindrical scintillator and is the setting of circular array multi-disc SiPM photomultiplier on the scintillator, SiPM photomultiplier quantity is the multiple of 2.

2. The SiPM photomultiplier based scintillation detector of claim 1, wherein said SiPM photomultiplier is configured with a plurality of circular arrays, and wherein adjacent two of said circular arrays of SiPM photomultipliers are disposed directly opposite or offset.

3. The SiPM photomultiplier based scintillation detector of claim 2, wherein adjacent two layers of said SiPM photomultiplier arrays are equally spaced.

4. The SiPM photomultiplier based scintillation detector of claim 1, wherein all of said SiPM photomultipliers are of the same or different specifications.

5. The SiPM photomultiplier-based scintillation detector of claim 1, further comprising a diffuse reflective film disposed on a surface of said scintillator, said diffuse reflective film having a gauge identical to a cross-sectional gauge of said scintillator, and wherein a through opening is disposed on said diffuse reflective film corresponding to each of said SiPM photomultiplier positions.

6. The SiPM photomultiplier-based scintillation detector of claim 2, wherein said scintillator has a cross-sectional diameter of 3 inches; the SiPM photomultiplier tube is 6x6mm in specification, 64 pieces in number and divided into 5 layers; the SiPM photomultiplier on the outermost layer is distributed with 24 pieces at an included angle of 15 degrees; the second layer SiPM photomultiplier arranges 18 with 20 degrees contained angles, the third layer SiPM photomultiplier arranges 12 with 30 degrees contained angles, the fourth layer SiPM photomultiplier arranges 8 with 45 degrees contained angles, the fifth layer SiPM photomultiplier arranges 2 with 180 degrees contained angles.

7. The SiPM photomultiplier based scintillation detector of claim 6, wherein the 64 pieces of SiPM photomultiplier supply circuitry are powered in two groups.

8. The SiPM photomultiplier based scintillation detector of claim 7, wherein 64 of said SiPM photomultipliers are arranged in parallel in four groups, each group containing 16 of said SiPM photomultipliers is arranged in parallel in four subgroups, 4 of said SiPM photomultipliers in each subgroup are connected in parallel in two series, the output end of each group of said SiPM photomultipliers is connected with a transconductance amplifier, and four of said transconductance amplifiers in four subgroups are connected in parallel with a summing amplifier.

9. The SiPM photomultiplier-based scintillation detector of claim 8, wherein a voltage divider resistor is further connected in parallel to two of said SiPM photomultipliers in each subgroup.

10. The SiPM photomultiplier-based scintillation detector of claim 8, wherein each subset of said SiPM photomultipliers has an isolation resistor connected to an output.

Technical Field

The invention relates to the technical field of nuclear radiation detection equipment, in particular to a scintillation detector based on an SiPM photomultiplier.

Background

Since 1985, SiPM, a detector made based on avalanche effect in Geiger mode, has been developed and paid great attention in high-energy physics, space detection, PET, DNA sequencing and other fields due to its high gain, good time resolution, insensitivity to magnetic field, low noise, low working voltage, high single photon measurement accuracy and other excellent performances. In recent years, in the field of nuclear radiation detection, particularly in the updating and development of scintillation detectors, research and development and design of relevant detectors have been carried out by various domestic and foreign research institutions. The scintillation detector includes a scintillator and an SiPM array.

The applicant has found that the prior art has at least the following technical problems:

scintillators are generally cylindrical structures because of the better light collection uniformity of the circular cross section, while SiPM volume production units (semiconductor flow sheet, generally square, round leftover) are generally square structures, so the scintillator production units are also generally square close-packed structures when forming arrays, and when the scintillator detector is formed by matching with the cylindrical scintillators, the problem of shape mismatching exists.

If the scintillator diameter is equal to the diagonal of the square SiPM array, there are cases where the scintillator has 4 edges that are not covered by sipms, which can lead to a problem of non-uniform detector light collection. If the crystal diameter is equal to the side length of the square SiPM array, 4 corners of the SiPM array will exceed the outer edge of the scintillator, resulting in SiPM waste.

Disclosure of Invention

The invention aims to provide a scintillation detector based on an SiPM photomultiplier, which aims to solve the technical problem that a scintillator and an SiPM array are not matched in the prior art.

In order to achieve the purpose, the invention provides the following technical scheme:

the invention provides a scintillation detector based on SiPM photomultiplier, which comprises a cylindrical scintillator and a plurality of SiPM photomultipliers arranged on the scintillator in a circular array, wherein the number of the SiPM photomultipliers is a multiple of 2.

As a further improvement of the invention, the SiPM photomultiplier is provided with a plurality of layers of circular arrays, and the circular arrays of the SiPM photomultiplier of two adjacent layers are arranged oppositely or in a staggered manner.

As a further improvement of the invention, the array pitch of the SiPM photomultiplier tubes in two adjacent layers is equal.

As a further improvement of the invention, all of the SiPM photomultiplier tubes are of the same or different specifications.

As a further improvement of the invention, the scintillator further comprises a diffuse reflection film arranged on the surface of the scintillator, the specification of the diffuse reflection film is the same as that of the section of the scintillator, and a through hole is formed in the diffuse reflection film corresponding to each SiPM photomultiplier.

As a further improvement of the invention, the scintillator has a cross-sectional diameter of 3 inches; the SiPM photomultiplier tube is 6x6mm in specification, 64 pieces in number and divided into 5 layers; the SiPM photomultiplier on the outermost layer is distributed with 24 pieces at an included angle of 15 degrees; the second layer SiPM photomultiplier arranges 18 with 20 degrees contained angles, the third layer SiPM photomultiplier arranges 12 with 30 degrees contained angles, the fourth layer SiPM photomultiplier arranges 8 with 45 degrees contained angles, the fifth layer SiPM photomultiplier arranges 2 with 180 degrees contained angles.

As a further improvement of the invention, the power supply circuits of 64 SiPM photomultiplier tubes are divided into two groups for power supply.

As a further improvement of the invention, 64 SiPM photomultiplier tubes are divided into four groups and arranged in parallel, each group comprises 16 SiPM photomultiplier tubes, each group comprises four groups of the 16 SiPM photomultiplier tubes and arranged in parallel, each group comprises 4 SiPM photomultiplier tubes which are connected in parallel in two series, the output end of each group of the SiPM photomultiplier tubes is connected with a transconductance amplifier, and four transconductance amplifiers of the four groups are connected with a summation amplifier in parallel.

As a further improvement of the invention, two SiPM photomultiplier tubes in parallel in each subgroup are also connected in parallel with a voltage dividing resistor.

As a further improvement of the invention, the output end of the SiPM photomultiplier of each subgroup is connected with an isolation resistor.

Compared with the prior art, the invention has the following beneficial effects:

according to the scintillation detector based on the SiPM photomultiplier, the SiPM photomultiplier is circularly and uniformly arranged according to a certain angle, the problem of matching with a circular scintillator is solved, all SiPM photomultiplier circuits are designed into one output, a grouping summation circuit is adopted, single-channel reading is realized on the basis of keeping the signal-to-noise ratio, and PMT replacement is more conveniently carried out as the same as the traditional PMT using method; the diffuse reflection film is arranged at the gap of the SiPM photomultiplier, so that the photon collection efficiency and uniformity are improved.

Drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.

FIG. 1 is a schematic diagram of a SiPM photomultiplier based scintillation detector of the present invention;

FIG. 2 is a diagram of the grouping and circuit design of SiPM photomultipliers in a SiPM photomultiplier based scintillation detector of the present invention.

FIG. 1, scintillator; 2. a SiPM photomultiplier tube; 3. a diffuse reflection film; 4. a through opening is formed; 5. a transconductance amplifier; 6. a summing amplifier; 7. a voltage dividing resistor; 8. and (4) isolating the resistor.

Detailed Description

In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be described in detail below. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the examples given herein without any inventive step, are within the scope of the present invention.

As shown in FIG. 1, the invention provides a scintillation detector based on SiPM photomultiplier, which comprises a cylindrical scintillator 1 and a plurality of SiPM photomultipliers 2 arranged on the scintillator 1 in a circular array, wherein the number of the SiPM photomultipliers 2 is a multiple of 2.

It should be noted that the number of SiPM photomultiplier tubes 2 is a multiple of 2 for the convenience of grouping in circuit design.

As an alternative embodiment of the present invention, the SiPM photomultiplier tubes 2 are arranged in a multi-layer circular array, and the circular arrays of two adjacent layers of SiPM photomultiplier tubes 2 are arranged in a facing or staggered manner.

Further, as shown in FIG. 1, two adjacent layers of circular arrays of SiPM photomultiplier tubes 2 are offset.

Further, the array pitch of two adjacent layers of SiPM photomultiplier tubes 2 is equal. That is, the spacing between two adjacent SiPM photomultiplier tubes 2 of each layer is equal.

Since there are various specifications of the SiPM photomultiplier tubes 2, each having 1mm, 3mm, 6mm, etc., in the present invention, all the SiPM photomultiplier tubes 2 have the same or different specifications.

As shown in FIG. 1, in an alternative embodiment of the present invention, all SiPM photomultiplier tubes 2 are of the same size, 6 mm.

Specifically, in order to improve the light absorption efficiency, the light absorption device further comprises a diffuse reflection film 3 arranged on the surface of the scintillator 1, the specification of the diffuse reflection film 3 is the same as that of the section of the scintillator 1, and a through opening 4 is formed in the diffuse reflection film 3 corresponding to each SiPM photomultiplier 2.

As an alternative embodiment of the present invention, the scintillator 1 has a cross-sectional diameter of 3 inches; the SiPM photomultiplier 2 is 6x6mm in specification, 64 pieces in number and divided into 5 layers; the outermost SiPM photomultiplier tubes 2 are arranged in 24 pieces at an included angle of 15 degrees; the SiPM photomultiplier 2 of the second layer arranges 18 with 20 degrees contained angles, the SiPM photomultiplier 2 of the third layer arranges 12 with 30 degrees contained angles, the SiPM photomultiplier 2 of the fourth layer arranges 8 with 45 degrees contained angles, the SiPM photomultiplier 2 of the fifth layer arranges 2 with 180 degrees contained angles.

In order to ensure that the scintillation detector can still be used after a fault, the power supply circuit of the 64 SiPM photomultiplier 2 is divided into two groups for supplying power, one group can be cut off without influencing the other group, and the usability after the fault is improved.

As shown in fig. 2, further, 64 SiPM photomultipliers 2 are arranged in parallel in four groups, each group includes 16 SiPM photomultipliers 2, each group of 16 SiPM photomultipliers 2 is arranged in parallel in four groups, each group of 4 SiPM photomultipliers 2 is connected in two series and two parallel, the output end of each group of SiPM photomultipliers 2 is connected with a transconductance amplifier 5, and four transconductance amplifiers 5 of the four groups are connected in parallel with a summing amplifier 6.

Specifically, two parallel SiPM photomultipliers 2 in each group are also connected with a voltage dividing resistor 7 in parallel.

The output end of the SiPM photomultiplier tube 2 of each group is connected with an isolation resistor 8.

Through the design, the 64 SiPM photomultiplier tubes 2 are divided into 4 large groups, each group comprises 16 SiPM photomultiplier tubes, one transconductance amplifier 5 is used for amplification as a front stage in each group, then the amplified front stage enters a summing amplifier 6, the summed output is carried out, and the signal-to-noise ratio is improved through two-stage amplification. Each large group is divided into 4 groups which are connected in parallel, and each small group adopts a mode of connecting 2 in series and 2 in parallel, so that the signal amplitude and width are balanced; as shown in fig. 2, Rp is a voltage dividing resistor, which provides a divided voltage for the SiPM photomultiplier tube 2 connected in series and simultaneously provides a charge/discharge current path for the SiPM photomultiplier tube 2; rs is an isolation resistor which isolates 4 groups to prevent crosstalk; TIA is transconductance amplifier and SUM is summation amplifier.

It should be noted that, as shown in fig. 1, each SiPM photomultiplier 2 is a square structure, and 36 pins are provided; the 64 SiPM photomultiplier tubes 2 are automatically numbered from the outer ring to the inner ring, namely D1, D2 and D3.... D64 respectively; as shown in fig. 2, the SiPM photomultiplier tubes 2 are grouped in the order of numbering and circuit-designed.

According to the scintillation detector based on the SiPM photomultiplier, the SiPM photomultiplier is circularly and uniformly arranged according to a certain angle, the problem of matching with a circular scintillator is solved, all SiPM photomultiplier circuits are designed into one output, a grouping summation circuit is adopted, single-channel reading is realized on the basis of keeping the signal-to-noise ratio, and PMT replacement is more conveniently carried out as the same as the traditional PMT using method; the diffuse reflection film is arranged at the gap of the SiPM photomultiplier, so that the photon collection efficiency and uniformity are improved.

It should be noted that "inward" is a direction toward the center of the accommodating space, and "outward" is a direction away from the center of the accommodating space.

In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in fig. 1 to facilitate the description of the invention and to simplify the description, but are not intended to indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and are not to be considered as limiting the invention.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.

In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.

The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.