阅读说明：本技术 一种靶材组件的电子束焊接方法及靶材组件 (Electron beam welding method of target assembly and target assembly ) 是由 姚力军 边逸军 潘杰 王学泽 张冬青 于 2021-07-12 设计创作，主要内容包括：本发明提供了一种靶材组件的电子束焊接方法及靶材组件,所述电子束焊接方法包括以下步骤：(1)提供靶坯和背板,将靶坯的焊接面与背板的焊接面相对设置并贴合,形成预焊靶材组件；(2)将步骤(1)所得预焊靶材组件置于真空环境中,并使预焊靶材组件处于旋转状态,采用电子束对预焊靶材组件的焊缝进行焊接,在0.1-0.5s的收尾时间内完成收尾操作,形成靶材组件。本发明提供的电子束焊接方法彻底去除了收尾缺陷,提升了产品良率,将返焊率控制在2％以下,显著提高了生产效率。(The invention provides an electron beam welding method of a target assembly and the target assembly, wherein the electron beam welding method comprises the following steps: (1) providing a target blank and a back plate, and oppositely arranging and attaching a welding surface of the target blank and a welding surface of the back plate to form a prewelding target material assembly; (2) and (2) placing the pre-welded target assembly obtained in the step (1) in a vacuum environment, enabling the pre-welded target assembly to be in a rotating state, welding the welding seam of the pre-welded target assembly by adopting an electron beam, and finishing ending operation within ending time of 0.1-0.5s to form the target assembly. The electron beam welding method provided by the invention thoroughly removes the ending defect, improves the product yield, controls the welding return rate to be below 2%, and obviously improves the production efficiency.)

1. An electron beam welding method of a target assembly, characterized by comprising the steps of:

(1) providing a target blank and a back plate, and oppositely arranging and attaching a welding surface of the target blank and a welding surface of the back plate to form a prewelding target material assembly;

(2) and (2) placing the pre-welded target assembly obtained in the step (1) in a vacuum environment, enabling the pre-welded target assembly to be in a rotating state, welding the welding seam of the pre-welded target assembly by adopting an electron beam, and finishing ending operation within ending time of 0.1-0.5s to form the target assembly.

2. The electron beam welding method according to claim 1, wherein the absolute pressure of the vacuum atmosphere in step (2) is 10-100 mbar.

3. The electron beam welding method according to claim 1 or 2, wherein the rotation state in step (2) is a state in which the pre-welding target assembly rotates around a central line of the sputtering surface;

preferably, the rotating speed of the rotating state in the step (2) is 75-220 s/circle.

4. An electron beam welding method according to any one of claims 1 to 3, wherein the acceleration voltage of said electron beam in step (2) is 50 to 100 kV.

5. The electron beam welding method according to any one of claims 1 to 4, wherein the acceleration current of the electron beam in the step (2) is 100-500 mA.

6. The electron beam welding method according to any one of claims 1 to 5, wherein the focal point diameter of the electron beam of step (2) is 0.5 to 0.8 mm.

7. An electron beam welding method according to any one of claims 1 to 6, wherein the number of the welding of step (2) is 1 to 5 turns.

8. The electron beam welding method according to any one of claims 1 to 7, wherein the ending operation of step (2) is embodied to gradually decrease an acceleration voltage of the electron beam during an ending time, and finally turn off the electron beam.

9. The electron beam welding method according to any one of claims 1 to 8, characterized in that the electron beam welding method comprises the steps of:

(1) providing a target blank and a back plate, and oppositely arranging and attaching a welding surface of the target blank and a welding surface of the back plate to form a prewelding target material assembly;

(2) and (2) placing the pre-welded target assembly obtained in the step (1) in a vacuum environment with the absolute pressure of 10-100mbar, rotating the pre-welded target assembly around the central line of the sputtering surface at the rotating speed of 75-220 s/circle, welding the welding line of the pre-welded target assembly for 1-5 circles by adopting an electron beam with the accelerating voltage of 50-100kV, the accelerating current of 100-500mA and the focal diameter of 0.5-0.8mm, gradually reducing the accelerating voltage of the electron beam within the ending time of 0.1-0.5s, finally closing the electron beam, finishing ending operation and forming the target assembly.

10. A target assembly welded by the electron beam welding method according to any one of claims 1 to 9.

Technical Field

The invention belongs to the technical field of sputtering targets, relates to a target assembly, and particularly relates to an electron beam welding method of the target assembly and the target assembly.

Background

In the field of sputtering target manufacturing, a target assembly is composed of a target blank according with sputtering performance and a back plate combined with the target blank through welding. During the sputtering process, the target assembly is in an extremely harsh working environment. One side of the target assembly in the high-temperature working environment is flushed with cooling water for refrigeration, and the other side of the target assembly is in the high-vacuum environment, so that huge pressure difference is formed on two opposite sides of the target assembly. In addition, the target assembly is in a high-voltage electric field and a magnetic field and is bombarded by various high-speed particles. In order to ensure that the quality of the target assembly and the stability of the coating quality reach a high level, the welding bonding rate and the welding strength of the target blank and the back plate are important.

In the prior art, the welding modes of the target blank and the backing plate mainly comprise brazing, thermal diffusion welding and electron beam welding. The electron beam welding is a method for bombarding a workpiece placed in vacuum or non-vacuum by utilizing a directional high-speed and focused electron beam, so that kinetic energy is converted into heat energy to melt the workpiece for welding. The higher energy density of the electron beam can make the welding seam narrower, the depth-to-width ratio larger, and the welding stress and deformation smaller, so the electron beam is widely applied in the field of semiconductor sputtering.

However, in the process of preparing the target material assembly by electron beam welding, the technical precision requirement is high, and the end defect is difficult to completely eliminate, so that the problems of low product yield, high re-welding rate and low production efficiency generally exist.

Disclosure of Invention

Aiming at the defects in the prior art, the invention aims to provide the electron beam welding method of the target assembly and the target assembly, wherein the electron beam welding method thoroughly removes the ending defect, improves the product yield, controls the re-welding rate to be below 2 percent, and obviously improves the production efficiency.

In order to achieve the purpose, the invention adopts the following technical scheme:

in a first aspect, the present invention provides an electron beam welding method for a target assembly, the electron beam welding method comprising the steps of:

(1) providing a target blank and a back plate, and oppositely arranging and attaching a welding surface of the target blank and a welding surface of the back plate to form a prewelding target material assembly;

(2) and (2) placing the pre-welded target assembly obtained in the step (1) in a vacuum environment, enabling the pre-welded target assembly to be in a rotating state, welding the welding seam of the pre-welded target assembly by adopting an electron beam, and finishing ending operation within ending time of 0.1-0.5s to form the target assembly.

According to the invention, the target blank and the back plate are welded in a vacuum environment by adopting an electron beam welding mode to form the target assembly with excellent welding strength, especially the ending time is controlled within the range of 0.1-0.5s, compared with the conventional 5s ending time, the ending defect is thoroughly removed, the number of inner side air holes of the product after turning is greatly reduced, the product yield is improved, the re-welding rate is controlled below 2%, and the production efficiency is remarkably improved.

Preferably, the absolute pressure of the vacuum environment in step (2) is 10-100mbar, such as 10mbar, 20mbar, 30mbar, 40mbar, 50mbar, 60mbar, 70mbar, 80mbar, 90mbar or 100mbar, but is not limited to the recited values, and other values not recited in the range of values are equally applicable.

According to the invention, through carrying out electron beam welding operation in a vacuum environment, the influence of ionized gas in the air or impurities in the ionized gas on the welding effect is avoided, and the welding quality and the product yield are improved. In addition, the absolute pressure of the vacuum environment has a significant effect on the final welding effect of the target assembly. When the absolute pressure is higher than 100mbar, the adverse effect of ionized gas or impurities in the air on the welding strength and the product yield is more obvious; when the absolute pressure is lower than 10mbar, the improvement range of the welding effect is not obvious, and the processing cost is improved to a certain extent.

Preferably, the rotation state in the step (2) is a state in which the prewelding target assembly rotates around the central line of the sputtering surface.

Preferably, the rotation speed of the rotation state in step (2) is 75-220 s/turn, such as 75 s/turn, 80 s/turn, 100 s/turn, 120 s/turn, 140 s/turn, 160 s/turn, 180 s/turn, 200 s/turn or 220 s/turn, but not limited to the enumerated values, and other non-enumerated values in the numerical range are also applicable.

Compared with the control of the movement of the electron beam gun head, the control of the rotation of the pre-welding target assembly is more convenient, the motion track of the target assembly in the rotating state is more stable, the generation of the partial welding phenomenon is avoided, and the product yield is improved. In addition, the rotating speed of the prewelding target material assembly around the central line of the sputtering surface needs to be controlled within a reasonable range. When the rotating speed of the rotating state is faster than 75 s/circle, the high-energy particles in the electron beam can not fully concentrate the heat energy converted from the kinetic energy of the electron beam in the focus area within a limited time, so that the welding strength and the product yield are reduced; when the rotating speed in the rotating state is lower than 220 s/circle, the heat energy is excessively concentrated in the focus range of the electron beam, the over-welding phenomenon is easy to occur, and meanwhile, the processing cost is increased.

Preferably, the electron beam in step (2) has an accelerating voltage of 50-100kV, such as 50kV, 55kV, 60kV, 65kV, 70kV, 75kV, 80kV, 85kV, 90kV, 95kV or 100kV, but not limited to the recited values, and other values not recited in the range are also applicable.

Preferably, the accelerating current of the electron beam in step (2) is 100-500mA, such as 100mA, 150mA, 200mA, 250mA, 300mA, 350mA, 400mA, 450mA or 500mA, but is not limited to the enumerated values, and other unrecited values in the numerical range are also applicable.

Preferably, the electron beam in step (2) has a focal diameter of 0.5-0.8mm, such as 0.5mm, 0.55mm, 0.6mm, 0.65mm, 0.7mm, 0.75mm or 0.8mm, but not limited to the values listed, and other values not listed in this range are also applicable.

Preferably, the number of welding in step (2) is 1-5, for example, 1, 2, 3, 4 or 5.

Preferably, the ending operation in step (2) is to gradually decrease the acceleration voltage of the electron beam within the ending time, and finally turn off the electron beam.

As a preferable technical solution of the first aspect of the present invention, the electron beam welding method includes the steps of:

(1) providing a target blank and a back plate, and oppositely arranging and attaching a welding surface of the target blank and a welding surface of the back plate to form a prewelding target material assembly;

(2) and (2) placing the pre-welded target assembly obtained in the step (1) in a vacuum environment with the absolute pressure of 10-100mbar, rotating the pre-welded target assembly around the central line of the sputtering surface at the rotating speed of 75-220 s/circle, welding the welding line of the pre-welded target assembly for 1-5 circles by adopting an electron beam with the accelerating voltage of 50-100kV, the accelerating current of 100-500mA and the focal diameter of 0.5-0.8mm, gradually reducing the accelerating voltage of the electron beam within the ending time of 0.1-0.5s, finally closing the electron beam, finishing ending operation and forming the target assembly.

In a second aspect, the present invention provides a target assembly welded by the electron beam welding method according to the first aspect.

Compared with the prior art, the invention has the beneficial effects that:

according to the invention, the target blank and the back plate are welded in a vacuum environment by adopting an electron beam welding mode to form the target assembly with excellent welding strength, especially the ending time is controlled within the range of 0.1-0.5s, compared with the conventional 5s ending time, the ending defect is thoroughly removed, the number of inner side air holes of the product after turning is greatly reduced, the product yield is improved, the re-welding rate is controlled below 2%, and the production efficiency is remarkably improved.

Detailed Description

The technical solution of the present invention is further explained by the following embodiments.

Example 1

The present embodiment provides an electron beam welding method for a target assembly, including the following steps:

(1) providing a target blank and a back plate, and oppositely arranging and attaching a welding surface of the target blank and a welding surface of the back plate to form a prewelding target material assembly;

(2) and (2) placing the pre-welded target assembly obtained in the step (1) in a vacuum environment with the absolute pressure of 50mbar, enabling the pre-welded target assembly to rotate around the central line of a sputtering surface at the rotating speed of 150 s/circle, welding the welding seam of the pre-welded target assembly for 3 circles by adopting an electron beam with the accelerating voltage of 80kV, the accelerating current of 300mA and the focal diameter of 0.6mm, gradually reducing the accelerating voltage of the electron beam within the ending time of 0.3s, finally closing the electron beam, and finishing ending operation to form the target assembly.

By adopting the method to continuously weld 100 parts of target assemblies, the re-welding rate is only 1%, the end defect is completely removed, the number of inner side air holes of the turned product is greatly reduced, and the product yield and the production efficiency are improved.

Example 2

The present embodiment provides an electron beam welding method for a target assembly, including the following steps:

(1) providing a target blank and a back plate, and oppositely arranging and attaching a welding surface of the target blank and a welding surface of the back plate to form a prewelding target material assembly;

(2) and (2) placing the pre-welded target assembly obtained in the step (1) in a vacuum environment with the absolute pressure of 30mbar, enabling the pre-welded target assembly to rotate around the central line of a sputtering surface at the rotating speed of 100 s/circle, welding the welding seam of the pre-welded target assembly for 2 circles by adopting an electron beam with the accelerating voltage of 60kV, the accelerating current of 400mA and the focal diameter of 0.6mm, gradually reducing the accelerating voltage of the electron beam within the ending time of 0.2s, finally closing the electron beam, and finishing ending operation to form the target assembly.

By adopting the method to continuously weld 100 parts of target assemblies, the welding return rate is only 2%, the end defect is thoroughly removed, the number of inner side air holes of the turned product is greatly reduced, and the product yield and the production efficiency are improved.

Example 3

The present embodiment provides an electron beam welding method for a target assembly, including the following steps:

(1) providing a target blank and a back plate, and oppositely arranging and attaching a welding surface of the target blank and a welding surface of the back plate to form a prewelding target material assembly;

(2) and (2) placing the pre-welded target assembly obtained in the step (1) in a vacuum environment with the absolute pressure of 80mbar, enabling the pre-welded target assembly to rotate around the central line of a sputtering surface at the rotating speed of 200 s/circle, welding the welding seam of the pre-welded target assembly for 4 circles by adopting an electron beam with the accelerating voltage of 90kV, the accelerating current of 200mA and the focal diameter of 0.5mm, gradually reducing the accelerating voltage of the electron beam within the ending time of 0.4s, finally closing the electron beam, and finishing ending operation to form the target assembly.

By adopting the method to continuously weld 100 parts of target assemblies, the welding return rate is only 2%, the end defect is thoroughly removed, the number of inner side air holes of the turned product is greatly reduced, and the product yield and the production efficiency are improved.

Example 4

The present embodiment provides an electron beam welding method for a target assembly, including the following steps:

(1) providing a target blank and a back plate, and oppositely arranging and attaching a welding surface of the target blank and a welding surface of the back plate to form a prewelding target material assembly;

(2) and (2) placing the pre-welded target assembly obtained in the step (1) in a vacuum environment with the absolute pressure of 10mbar, enabling the pre-welded target assembly to rotate around the central line of a sputtering surface at the rotating speed of 75 s/circle, welding the welding seam of the pre-welded target assembly for 1 circle by adopting an electron beam with the accelerating voltage of 50kV, the accelerating current of 500mA and the focal diameter of 0.5mm, gradually reducing the accelerating voltage of the electron beam within the ending time of 0.1s, finally closing the electron beam, and finishing ending operation to form the target assembly.

By adopting the method to continuously weld 100 parts of target assemblies, the re-welding rate is only 1%, the end defect is completely removed, the number of inner side air holes of the turned product is greatly reduced, and the product yield and the production efficiency are improved.

Example 5

The present embodiment provides an electron beam welding method for a target assembly, including the following steps:

(1) providing a target blank and a back plate, and oppositely arranging and attaching a welding surface of the target blank and a welding surface of the back plate to form a prewelding target material assembly;

(2) and (2) placing the pre-welded target assembly obtained in the step (1) in a vacuum environment with the absolute pressure of 100mbar, enabling the pre-welded target assembly to rotate around the central line of a sputtering surface at the rotating speed of 220 s/circle, welding the welding seam of the pre-welded target assembly for 5 circles by adopting an electron beam with the accelerating voltage of 100kV, the accelerating current of 100mA and the focal diameter of 0.8mm, gradually reducing the accelerating voltage of the electron beam within the ending time of 0.5s, finally closing the electron beam, and finishing ending operation to form the target assembly.

By adopting the method to continuously weld 100 parts of target assemblies, the welding return rate is only 2%, the end defect is thoroughly removed, the number of inner side air holes of the turned product is greatly reduced, and the product yield and the production efficiency are improved.

Example 6

The present embodiment provides an electron beam welding method for a target assembly, wherein the conditions of the electron beam welding method are the same as those of embodiment 1 except that the absolute pressure of the vacuum environment in step (2) is changed to 200mbar, and thus the details are not repeated herein.

Compared with the embodiment 1, the method provided by the embodiment is adopted to continuously weld 100 parts of target assemblies, the reflow rate is 2%, and the number of inner side air holes of the product after turning is obviously more than that of the embodiment 1. It can be seen that the absolute pressure of the vacuum environment is higher than 100mbar, which has a certain adverse effect on the welding effect of the target assembly, but the reflow rate can still be kept at a good level.

Example 7

The present embodiment provides an electron beam welding method for a target assembly, wherein the rotation speed of the target assembly prewelded in step (2) is changed to 60 s/circle, and the other conditions are the same as those in embodiment 1, and therefore, the details are not described herein.

Compared with the embodiment 1, the method provided by the embodiment is adopted to continuously weld 100 parts of target assemblies, the reflow rate is 2%, and the number of inner side air holes of the product after turning is obviously more than that of the embodiment 1. Therefore, the target material assembly is prewelded at a rotation speed of more than 75 s/circle around the central line of the sputtering surface, so that the welding effect of the target material assembly is adversely affected to a certain extent, and the return welding rate can be kept at a good level.

Example 8

The present embodiment provides an electron beam welding method for a target assembly, wherein the rotation speed of the target assembly prewelded in step (2) is changed to 250 s/circle, and the other conditions are the same as those in embodiment 1, and therefore, the details are not described herein.

Compared with the embodiment 1, the method provided by the embodiment is adopted to continuously weld 100 parts of target assemblies, the return welding rate is 1%, but the number of the products subjected to over-welding is more than that of the embodiment 1, so that the processing cost is unnecessarily increased to a certain extent, and the target blank lost by the target assemblies subjected to over-welding in the subsequent turning process is more, so that the resource waste is caused. Therefore, the target material assembly is prewelded at a rotating speed of less than 220 s/circle around the central line of the sputtering surface, the welding effect of the target material assembly is adversely affected to a certain extent, and the return welding rate can be kept at a good level.

Comparative example 1

The present comparative example provides an electron beam welding method for a target assembly, which is the same as in example 1 except that the vacuum environment in step (2) is changed to a standard atmospheric pressure environment, and therefore, the details are not repeated herein.

Compared with the embodiment 1, the method for continuously welding 100 parts of target assemblies has the advantages that the reflow rate is 4%, and the number of the inner side pores of the product after turning is obviously more than that of the embodiment 1. Therefore, the non-vacuum environment can bring obvious adverse effects on the welding effect of the target assembly.

Comparative example 2

The present comparative example provides an electron beam welding method for a target assembly, which is the same as that of example 1 except that the ending time in step (2) is changed to 5s, and therefore, the details are not repeated herein.

Compared with the embodiment 1, the method for continuously welding 100 parts of target assemblies has the advantages that the reflow rate is 5%, and the number of the inner side pores of the product after turning is obviously more than that of the embodiment 1. Therefore, the slow ending time can bring obvious adverse effects to the welding effect of the target assembly.

In conclusion: according to the invention, the target blank and the back plate are welded in a vacuum environment by adopting an electron beam welding mode to form the target assembly with excellent welding strength, especially the ending time is controlled within the range of 0.1-0.5s, compared with the conventional 5s ending time, the ending defect is thoroughly removed, the number of inner side air holes of the product after turning is greatly reduced, the product yield is improved, the re-welding rate is controlled below 2%, and the production efficiency is remarkably improved.

The above-mentioned embodiments are intended to illustrate the objects, technical solutions and advantages of the present invention in further detail, and it should be understood that the above-mentioned embodiments are only exemplary embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalents, improvements and the like made within the spirit and principle of the present invention should be included in the protection scope of the present invention.