阅读说明：本技术 用于提纯过氧化氢的方法 (Process for purifying hydrogen peroxide ) 是由 金德允 金惠珍 金敬烈 金容逸 于 2019-01-25 设计创作，主要内容包括：本发明涉及一种用于提纯过氧化氢的方法。更具体地,该方法包括使用初级提纯系统提纯过氧化氢的粗产物的步骤,和使用二级提纯系统提纯经过初级提纯的过氧化氢溶液的步骤。初级提纯系统和二级提纯系统中的一个包括电去离子系统,并且初级提纯系统和二级提纯系统中的另一个包括蒸馏系统、树脂系统、反渗透系统及其组合系统中的至少一个。(The present invention relates to a process for purifying hydrogen peroxide. More specifically, the method includes a step of purifying a crude product of hydrogen peroxide using a primary purification system, and a step of purifying the primarily purified hydrogen peroxide solution using a secondary purification system. One of the primary and secondary purification systems includes an electrodeionization system and the other of the primary and secondary purification systems includes at least one of a distillation system, a resin system, a reverse osmosis system, and combinations thereof.)

1. A method for purifying hydrogen peroxide, the method comprising:

purifying the crude product of hydrogen peroxide using a primary purification system; and

purifying the primarily purified hydrogen peroxide solution using a secondary purification system, wherein:

one of the primary purification system and the secondary purification system comprises an electrodeionization system; and is

The other of the primary purification system and the secondary purification system comprises at least one of a distillation system, a resin system, a reverse osmosis system, and combinations thereof.

2. The method of claim 1, wherein the electrodeionization system comprises:

a first electrode and a second electrode;

a first concentrating compartment, a second concentrating compartment, and a diluting compartment located between the first concentrating compartment and the second concentrating compartment;

an ion exchange resin disposed inside the dilution chamber;

an anion exchange membrane located between the first concentrating compartment and the diluting compartment; and

a cation exchange membrane located between the second concentrating compartment and the diluting compartment.

3. The method of claim 2, wherein:

applying a direct current power to the first electrode and the second electrode;

anion impurities in the hydrogen peroxide solution inside the dilution chamber pass through the anion exchange membrane and move to the first concentration chamber; and is

The cation impurities in the hydrogen peroxide solution inside the dilution chamber pass through the cation exchange membrane and move to the second concentration chamber.

4. The method of claim 2, wherein:

introducing a first concentrate and a second concentrate into the first concentrating compartment and the second concentrating compartment, respectively; and is

The first and second concentrates are water.

5. The method of claim 1, wherein:

the primary purification system comprises at least one of a distillation system, a resin system, a reverse osmosis system, and combinations thereof; and is

The secondary purification system includes an electrodeionization system.

6. The method of claim 5, wherein the purifying using the primary purification system comprises:

performing a distillation process on the crude product of hydrogen peroxide; and

the resin process is performed on the distilled hydrogen peroxide solution.

7. The method of claim 5, wherein the purifying using the primary purification system comprises:

performing a resin process on the crude product of hydrogen peroxide; and

performing a reverse osmosis process on the hydrogen peroxide solution subjected to the resin process.

8. The method of claim 5, further comprising passing the primarily purified hydrogen peroxide solution through a heat exchanger.

9. The method of claim 1, wherein the electrodeionization system comprises a cooling system for cooling the hydrogen peroxide solution.

10. The method of claim 1, wherein:

the primary purification system comprises an electrodeionization system; and is

The secondary purification system includes at least one of a distillation system, a resin system, a reverse osmosis system, and combinations thereof.

11. A method for manufacturing a semiconductor device, the method comprising:

a cleaning process comprising the process steps of performing cleaning of a semiconductor substrate using hydrogen peroxide purified according to claim 1.

Technical Field

The present invention relates to a method for purifying hydrogen peroxide, and more particularly, to a method for purifying hydrogen peroxide including an electrodeionization process.

Background

Hydrogen peroxide has a strong oxidizing power and its decomposition products are harmless. Thus, hydrogen peroxide is used as an oxidizing agent, a bleaching agent for silk or wool, and a catalyst for vinyl polymerization in the plastics industry. In addition, hydrogen peroxide is used for semiconductor wafer cleaning in addition to the above-mentioned uses.

Techniques for cleaning semiconductor wafers can be classified into wet cleaning and dry cleaning. The cleaning process is similar to the etching process in that substances on the surface of the semiconductor wafer are removed, but is different therefrom in that impurities present on the surface of the semiconductor wafer are selectively removed. As a typical wet cleaning method, there is a chemical wet method using hydrogen peroxide.

Disclosure of Invention

Technical problem

The present invention provides a method for purifying hydrogen peroxide, which is capable of producing high-purity hydrogen peroxide.

Technical scheme

The method for purifying hydrogen peroxide according to the inventive concept of the present invention may include: purifying the crude hydrogen peroxide product using a primary purification system, and purifying the primary purified hydrogen peroxide solution using a secondary purification system. One of the primary and secondary purification systems may include an electrodeionization system and the other of the primary and secondary purification systems may include at least one of a distillation system, a resin system, a reverse osmosis system, and combinations thereof.

A method for manufacturing a semiconductor device according to another inventive concept of the present invention may include performing a cleaning process on a semiconductor substrate using hydrogen peroxide purified according to the method for purifying hydrogen peroxide.

Advantageous effects

The method for purifying hydrogen peroxide according to the present invention can obtain high-purity hydrogen peroxide in a large amount with high yield by an electrodeionization system. The obtained hydrogen peroxide can be used for a process of cleaning a semiconductor substrate, and defects in a semiconductor process can be prevented.

Drawings

FIG. 1 is a schematic diagram for describing a hydrogen peroxide purification system according to an embodiment of the present invention;

FIG. 2 is a schematic diagram of an electrodeionization system useful in describing the hydrogen peroxide purification system of FIG. 1;

FIG. 3 is a schematic diagram for describing a hydrogen peroxide purification system according to an embodiment of the present invention;

FIG. 4 is a schematic diagram for describing a hydrogen peroxide purification system according to an embodiment of the present invention;

FIG. 5 is a schematic diagram for describing a hydrogen peroxide purification system according to an embodiment of the present invention;

FIG. 6 is a schematic diagram for describing a hydrogen peroxide purification system according to an embodiment of the present invention;

FIG. 7 is a schematic diagram illustrating an electrodeionization system according to an embodiment of the invention;

FIG. 8 is a schematic diagram for describing a hydrogen peroxide purification system according to an embodiment of the present invention; and

fig. 9 is a schematic view for describing a process of cleaning a semiconductor substrate using purified hydrogen peroxide according to an embodiment of the present invention.

Detailed Description

In order to facilitate a full understanding of the construction and effects of the present invention, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the present invention is not limited to the embodiments set forth below, and may be embodied in various forms and modified in various alternative forms. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art to which the invention pertains.

In the present description, when an element is referred to as being on another element, it means that the element may be directly formed on the other element or a third element may be interposed therebetween. In addition, in the drawings, the thickness of elements is exaggerated for effectively describing technical contents. Like reference numerals refer to like elements throughout the specification.

Although terms such as first, second, third, etc., are used to describe various elements in various embodiments of the specification, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. The embodiments described and illustrated herein also include complementary embodiments thereof.

The terminology used herein is for the purpose of describing embodiments and is not intended to be limiting of the invention. In this specification, the singular forms include the plural forms unless the context clearly dictates otherwise. As used herein, the terms "comprises" and/or "comprising" are intended to include the recited elements without precluding the presence or addition of one or more other elements.

Fig. 1 is a schematic diagram for describing a hydrogen peroxide purification system according to an embodiment of the present invention. Fig. 2 is a schematic diagram of an electrodeionization system used to describe the hydrogen peroxide purification system of fig. 1.

Referring to fig. 1 and 2, the hydrogen peroxide purification system may include a primary purification system PFS1 and a secondary purification system PFS 2. The crude product R of hydrogen peroxide is purified sequentially by the primary purification system PFS1 and the secondary purification system PFS2, and purified hydrogen peroxide P can be finally obtained from the crude product R of hydrogen peroxide.

The crude product R of hydrogen peroxide can be made by the alkylanthraquinone process. The crude product R of hydrogen peroxide may be a product synthesized by the hydrogenation-oxidation reaction of alkylanthraquinone. The crude product R of hydrogen peroxide may be the product of the alkylanthraquinone process which has not been subjected to a purification process such as distillation.

Specifically, when hydrogen is added to alkylanthraquinone to produce hydroquinone, which is then reacted with oxygen in the air, the hydroquinone is reduced back to anthraquinone, which can produce hydrogen peroxide. By adding water to the anthraquinone and hydrogen peroxide as the products of the oxidation reaction, a crude product R of hydrogen peroxide can be extracted and obtained.

The crude product R of hydrogen peroxide produced by the alkylanthraquinone process may include metal impurities such as Fe, Cr, Al and Na at a concentration of 10ppb or more, such as PO at a concentration of 10ppb or more₄ ^3-、SO₄ ^2-、NO₃ ^-And Cl^-And Total Organic Carbon (TOC) at a concentration of 100ppm or greater.

The crude product R of hydrogen peroxide can be introduced into the primary purification system PFS 1. The primary purification system PFS1 may include a distillation system, a resin system, a reverse osmosis system, or a combination thereof. In other words, the crude product R of hydrogen peroxide may be subjected to a distillation process, a resin process, a reverse osmosis process, or a combination thereof using the primary purification system PFS 1.

In one embodiment, the distillation system may comprise a distillation column. A distillation system may be used to perform a distillation process on the crude product R of hydrogen peroxide. In particular, impurities in the crude product R of hydrogen peroxide can be concentrated at the lower end of the distillation column by the distillation process. From the upper end of the distillation column, a distilled hydrogen peroxide solution can be obtained. Therefore, some impurities (for example, metal impurities, anion impurities, and TOC) in the crude product R of hydrogen peroxide are removed by the distillation system, so that a hydrogen peroxide solution having an improved purity can be obtained.

In one embodiment, the resin system may include a pre-treatment resin. The pretreatment resin may include a resin containing a porous polymer, an ion exchange resin having cation/anion functional groups, or a combination thereof. For example, the pretreatment resin may include a commercially available resin, such as AMBERLITE SCAV resin from Dow Inc. or PAD resin from Purolite Inc. The used pre-treated resin may be regenerated by steam treatment or chemical treatment using methanol, hydrochloric acid, or the like. The resin system may further include a plurality of adsorption filters capable of removing organic carbon. Some of the impurities in the crude product R of hydrogen peroxide can be removed by a resin process using a resin system.

In one embodiment, a reverse osmosis system may include a vessel and a reverse osmosis membrane in the vessel. By the reverse osmosis process using the reverse osmosis system, some impurities in the crude product R of hydrogen peroxide can be removed.

Therefore, some impurities in the crude product R of hydrogen peroxide are removed by the primary purification system PFS1, so that the primary-purified hydrogen peroxide solution PS can be obtained.

The primarily purified hydrogen peroxide solution PS may be introduced into a secondary purification system PFS 2. The secondary purification system PFS2 may include an electrodeionization system EDI. The electrodeionization process may be performed on the hydrogen peroxide solution PS using an electrodeionization system EDI.

Referring back to fig. 2, the electrodeionization system EDI may include a first electrode ELa, a second electrode ELc, a first concentrating compartment CC1, a second concentrating compartment CC2, and a diluting compartment DC located between the first concentrating compartment CC1 and the second concentrating compartment CC 2. The first and second concentrating compartments CC1 and CC2 and the diluting compartment DC may be disposed between the first and second electrodes ELa and ELc. For example, the first electrode ELa may be an anode and the second electrode ELc may be a cathode.

Anion exchange membranes EMa and cation exchange membranes EMc may be alternately disposed between first electrode ELa and second electrode ELc. For example, one of the anion exchange membranes EMa may be placed between the first concentration compartment CC1 and the dilution compartment DC. Another of the anion exchange membranes EMa may be disposed between the second concentrating chamber CC2 and the second electrode ELc. One of the cation exchange membranes EMc may be placed between the second concentration compartment CC2 and the dilution compartment DC. Another one of the cation exchange membranes EMc may be disposed between the first concentrating compartment CC1 and the first electrode ELa. The anion exchange membrane EMa can transport anions but not cations. The cation exchange membrane EMc can transport cations but not anions.

An ion exchange resin ER can be arranged in the dilution chamber DC. The ion exchange resin ER may include an anion exchange resin ERa and a cation exchange resin ERc. The anion exchange resin ERa can adsorb anions and move them to the anion exchange membrane EMa. Cation exchange resin ERc can adsorb cations and move them to cation exchange membrane EMc. For example, the ion exchange resin ER can prevent the resistance of the hydrogen peroxide solution PS from increasing even when the concentration of ions in the hydrogen peroxide solution PS decreases.

The cation exchange membrane EMc and the cation exchange resin ERc of the electrodeionization system EDI according to the invention may be pre-treated with an acid. For example, cation exchange membrane EMc and cation exchange resin ERc can be treated with 1 wt% to 10 wt% acid solution (HCl, H)₂SO₄、HNO₃Etc.) to perform a pretreatment. Thus, Na as the terminal group of cation exchange membrane EMc and cation exchange resin ERc⁺(sodium form) can be converted to H⁺(hydrogen form). Therefore, the stability of the electrodeionization system EDI to the hydrogen peroxide solution PS can be improved.

The hydrogen peroxide solution PS and water may be introduced into the inlet IN of the electrodeionization system EDI. The water may be purified water having a low conductivity. The concentration of hydrogen peroxide in the hydrogen peroxide solution PS to be introduced may be 1 wt% to 70 wt%. The hydrogen peroxide solution PS may be introduced into the dilution compartment DC and water may be introduced into the first and second concentration compartments CC1 and CC 2. The concentration of hydrogen peroxide in the first concentrated liquid WF1 to be introduced into the first concentrating chamber CC1 and the concentration of hydrogen peroxide in the second concentrated liquid WF2 to be introduced into the second concentrating chamber CC2 may be 1 wt% or less.

A direct current source may be applied between the first electrode ELa and the second electrode ELc to allow current to flow from the first electrode ELa to the second electrode ELc. Cations (e.g., metal impurities) of the hydrogen peroxide solution PS in the dilution chamber DC may pass through the cation exchange membrane EMc and move to the second concentrated liquid WF2 of the second concentration chamber CC2 by electrostatic attraction generated by the direct current power source. Anions (e.g., anionic impurities) of the hydrogen peroxide solution PS in the dilution chamber DC can pass through the anion exchange membrane EMa and move to the first concentrated liquid WF1 of the first concentration chamber CC1 by electrostatic attraction generated by the direct current power source.

The concentration of ions IN the hydrogen peroxide solution PS may decrease from the inlet IN of the dilution chamber DC to the outlet OUT thereof. That is, the concentration of impurities IN the hydrogen peroxide solution PS may decrease from the inlet IN of the dilution chamber DC to the outlet OUT thereof. The purified hydrogen peroxide P can be discharged through the outlet OUT of the dilution chamber DC.

The first and second concentrated liquids WF1 and WF2 may be discharged through the outlet OUT of each of the first and second concentrating chambers CC1 and CC 2. The impurities transferred from the hydrogen peroxide solution PS may be concentrated and exist in the discharged first and second concentrated liquids WF1 and WF 2. For example, the discharged first concentrated liquid WF1 and second concentrated liquid WF2 may be discarded. For another example, the first and second concentrates WF1 and WF2 may be filtered and then introduced back into the inlet IN of the electrodeionization system EDI. That is, the first and second concentrated liquids WF1 and WF2 may be circulated in the electrodeionization system EDI.

Since the concentration of ions IN the hydrogen peroxide solution PS decreases from the inlet IN of the dilution chamber DC to the outlet OUT thereof, the resistance of the hydrogen peroxide solution PS can increase IN a region of the dilution chamber DC adjacent to the outlet OUT. Therefore, in the one region of the dilution chamber DC, a voltage drop may occur, so that decomposition of water and/or decomposition of hydrogen peroxide may occur. The decomposition of water and/or the decomposition of hydrogen peroxide may generate hydrogen ions and hydroxide ions, which may regenerate the ion exchange resin ER. Therefore, the electrodeionization system EDI according to the present invention may not require a separate process to regenerate the ion exchange resin ER.

The hydrogen peroxide purification system according to the embodiment of the present invention uses the electrodeionization system EDI as the secondary purification system PFS2 of hydrogen peroxide, so that high-purity hydrogen peroxide can be obtained with high yield. Further, the electrodeionization system EDI may be at relatively high flow rates (e.g., 1 to 10 m)³/hr), so that high-purity hydrogen peroxide can be obtained in large quantities.

Fig. 3 is a schematic diagram for describing a hydrogen peroxide purification system according to an embodiment of the present invention. In the present embodiment, detailed description of the same technical features as those described above with reference to fig. 1 and 2 will be omitted, and differences will be described in detail.

Referring to fig. 3, primary purification system PFS1 may include a distillation system DIS and a resin system RES. The crude product R of hydrogen peroxide may first be introduced into a distillation system DIS to carry out the distillation process. The distilled hydrogen peroxide solution DS can subsequently be introduced into the resin system RES for carrying out the resin process. The hydrogen peroxide solution PS passed through the primary purification system PFS1 may be introduced into the secondary purification system PFS 2.

Example 1

The hydrogen peroxide is purified using the hydrogen peroxide purification process described with reference to fig. 3. Specifically, the crude product of hydrogen peroxide produced by the alkylanthraquinone process is distilled and then subjected to primary purification by a pre-treatment resin process. The primary purified hydrogen peroxide solution is subjected to a secondary purification using the electrodeionization system EDI according to the present invention. The concentrations of impurities in the primarily purified hydrogen peroxide solution and the concentrations of impurities in the secondarily purified hydrogen peroxide solution by the electrodeionization process were measured and are shown in table 1 below.

[ TABLE 1 ]

Referring to table 1, it was confirmed that when the primarily purified hydrogen peroxide solution was subjected to secondary purification by the electrodeionization process, TOC was removed 83%, metal impurities were removed 90% or more, and anion impurities were removed 90% or more. Therefore, it was confirmed that when the secondary purification process was additionally performed on the primarily purified hydrogen peroxide solution by the electrodeionization process, an ultra-high purity hydrogen peroxide solution could be obtained.

Fig. 4 is a schematic diagram for describing a hydrogen peroxide purification system according to an embodiment of the present invention. In the present embodiment, detailed description of the same technical features as those described above with reference to fig. 1 and 2 will be omitted, and differences will be described in detail.

Referring to fig. 4, the primary purification system PFS1 may be omitted. That is, the crude product R of hydrogen peroxide can be introduced directly into the electrodeionization system EDI as the secondary purification system PFS 2.

Example 2

The hydrogen peroxide is purified using the hydrogen peroxide purification process described with reference to fig. 4. Unlike example 1 above, the crude product of hydrogen peroxide produced by the alkylanthraquinone process was directly purified using the electrodeionization system EDI without distillation and primary purification. The concentrations of impurities in the crude product of hydrogen peroxide and the hydrogen peroxide solution purified by the electrodeionization process were measured and are shown in table 2 below.

[ TABLE 2 ]

Referring to table 2, it was confirmed that when the crude product of hydrogen peroxide was purified by the electrodeionization process, TOC was removed by 46%, metal impurities other than Na were removed by about 80% or more, and Cl was removed^-The anionic impurities other than about 15% were removed.

It was confirmed that the concentration of impurities in the purified hydrogen peroxide solution obtained according to the present embodiment was higher than that of the purified hydrogen peroxide solution of example 1 described above. That is, it was confirmed that when the hydrogen peroxide solution subjected to the primary purification process was further subjected to secondary purification by an electrodeionization process, a higher purity hydrogen peroxide solution could be obtained.

Fig. 5 is a schematic diagram for describing a hydrogen peroxide purification system according to an embodiment of the present invention. In the present embodiment, detailed description of the same technical features as those described above with reference to fig. 1 and 2 will be omitted, and differences will be described in detail.

Referring to fig. 5, the primary purification system PFS1 may include a resin system RES and a reverse osmosis system ROS. The crude product R of hydrogen peroxide can first be introduced into a resin system RES for carrying out the resin process. The hydrogen peroxide solution that has undergone the resin process may then be introduced into the reverse osmosis system ROS to perform the reverse osmosis process. Impurities in the crude product R of hydrogen peroxide may damage the reverse osmosis membrane. Therefore, when the crude product R of hydrogen peroxide is first subjected to a resin process, some impurities are removed, so that the life of the reverse osmosis membrane can be extended.

Fig. 6 is a schematic diagram for describing a hydrogen peroxide purification system according to an embodiment of the present invention. In the present embodiment, detailed description of the same technical features as those described above with reference to fig. 1 and 2 will be omitted, and differences will be described in detail.

Referring to fig. 6, the hydrogen peroxide purification system may further include a heat exchanger HE disposed between the first purification system PFS1 and the second purification system PFS 2. The temperature of the primarily purified hydrogen peroxide solution PS can be adjusted when it passes through the heat exchanger HE. The heat exchanger HE may adjust the temperature of the hydrogen peroxide solution PS to-20 ℃ to 20 ℃. In other words, the hydrogen peroxide solution PS having a temperature of-20 ℃ to 20 ℃ may be introduced into the electrodeionization system EDI as the secondary purification system PFS 2.

Because hydrogen peroxide is a strong oxidizing agent, it oxidizes and ages the ion exchange media of the diluting chamber DC of the electrodeionization system EDI. Therefore, the pressure in the electrodeionization system EDI may increase due to the generation of oxygen due to the decomposition of hydrogen peroxide caused by the decrease in the resistance in the dilution chamber. As the temperature of hydrogen peroxide increases, the amount of oxygen produced may increase rapidly. If oxygen is excessively generated, the pressure in the electrodeionization system EDI is excessively increased, thereby damaging the electrodeionization system EDI and reducing the efficiency of the purification process.

According to the present embodiment, the temperature of the hydrogen peroxide solution PS to be introduced into the electrodeionization system EDI can be appropriately adjusted by the heat exchanger HE to prevent excessive generation of oxygen. Accordingly, damage to the electrodeionization system EDI can be prevented and the purification efficiency of hydrogen peroxide can be improved.

Fig. 7 is a schematic view for describing an electrodeionization system according to an embodiment of the present invention. In the present embodiment, detailed description of the same technical features as those described above with reference to fig. 1 and 2 will be omitted, and differences will be described in detail.

Referring to fig. 7, the electrodeionization system EDI may further include a cooling system CLS. A cooling system CLS may be disposed between the first electrode ELa and the first concentrating chamber CC1 and between the second electrode ELc and the second concentrating chamber CC 2. The cooling system CLS may cool the hydrogen peroxide solution PS flowing in the dilution chamber DC.

As described above with reference to fig. 6, when the temperature of the hydrogen peroxide solution PS is increased, oxygen is excessively generated, which may cause a process risk. According to the present embodiment, the hydrogen peroxide solution PS in the dilution chamber DC is cooled by the cooling system CLS, so that it is possible to prevent excessive generation of oxygen.

Fig. 8 is a schematic diagram for describing a hydrogen peroxide purification system according to an embodiment of the present invention. In the present embodiment, detailed description of the same technical features as those described above with reference to fig. 1 and 2 will be omitted, and differences will be described in detail.

Referring to fig. 8, a crude product R of hydrogen peroxide can be introduced into the primary purification system PFS 1. The primary purification system PFS1 may include an electrodeionization system EDI. The crude product R of hydrogen peroxide is freed from some impurities by means of an electrodeionization system EDI, so that a primarily purified hydrogen peroxide solution PS can be obtained.

The primarily purified hydrogen peroxide solution PS is introduced into a secondary purification system PFS 2. The secondary purification system PFS2 may include an electrodeionization system EDI, a distillation system, a resin system, a reverse osmosis system, or a combination thereof. In other words, the crude product R of hydrogen peroxide may be subjected to an electrodeionization process, a distillation process, a resin process, a reverse osmosis process, or a combination thereof using the primary purification system PFS 1. Impurities in the hydrogen peroxide solution PS are removed by the secondary purification system PFS2, so that purified hydrogen peroxide P can be obtained.

By the method for purifying hydrogen peroxide according to the above embodiment of the present invention, high-purity hydrogen peroxide can be obtained. Fig. 9 is a schematic view for describing a process of cleaning a semiconductor substrate using purified hydrogen peroxide according to an embodiment of the present invention.

Referring to fig. 9, the method for manufacturing the semiconductor device may include a process of cleaning the semiconductor substrate SUB. Specifically, the process of cleaning the semiconductor substrate SUB may include applying the hydrogen peroxide P purified by the purification method of the present invention on the semiconductor substrate SUB. For example, the semiconductor substrate SUB may include silicon, germanium, or silicon germanium.

If hydrogen peroxide containing impurities is used in the cleaning process, the impurities may react with substances on the semiconductor substrate SUB and may cause defects in the semiconductor process. Meanwhile, the purified hydrogen peroxide P according to the present invention has very low content of impurities, so that defects in a semiconductor process can be prevented.

Although the present invention has been described with reference to the accompanying drawings, it will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention. It will thus be appreciated that the above-described embodiments described above are exemplary and non-limiting in every respect.