阅读说明：本技术 基于“倒e”结构的单电路多比特移相器 (Single-circuit multi-bit phase shifter based on inverted E structure ) 是由 刘云 刘凌云 于 2020-12-29 设计创作，主要内容包括：本发明公开了基于“倒E”结构的单电路多比特移相器,属于基本电气元件的技术领域。该移相器由上层微带结构、中间层介质板、下层金属板组成。上层微带结构由一条50Ω主传输线和三个N比特分支电纳加载单元组成,通过N个开关的通断实现单个N比特电纳加载单元中的N条微带传输线是否接入。因为PIN二极管开关被并联加载到微带传输线,而不是串联接入传输线,所以可以实现较低的插入损耗。设计的基于“倒E”结构的单电路多比特移相器的移相单元电路中只通过一条主传输线和三个N比特分支电纳加载单元实现了多比特移相功能,与传统的多比特移相器比较,该移相器单元的N个移相比特共用主传输线,具有电路紧凑、电路面积小、损耗低、易加工的优点。(The invention discloses a single-circuit multi-bit phase shifter based on an inverted E structure, and belongs to the technical field of basic electrical elements. The phase shifter is composed of an upper layer microstrip structure, a middle layer dielectric plate and a lower layer metal plate. The upper-layer microstrip structure consists of a 50 omega main transmission line and three N-bit branch susceptance loading units, and whether the N microstrip transmission lines in the single N-bit susceptance loading unit are connected or not is realized through the on-off of N switches. Because the PIN diode switches are loaded in parallel to the microstrip transmission line, rather than in series into the transmission line, lower insertion losses can be achieved. The designed single-circuit multi-bit phase shifter based on the inverted E structure realizes the multi-bit phase shifting function only through one main transmission line and three N-bit branch susceptance loading units, compared with the traditional multi-bit phase shifter, the N phase shifting bits of the phase shifter unit share the main transmission line, and the phase shifter has the advantages of compact circuit, small circuit area, low loss and easiness in processing.)

1. The single-circuit multi-bit phase shifter based on the inverted-E structure is characterized by comprising a main transmission line and 3N-bit branch susceptance loading units, wherein the 3N-bit branch susceptance loading units are distributed on one side of the main transmission line at equal intervals, the 3N-bit branch susceptance loading units and the main transmission line are in a symmetrical inverted-E structure, the circuit parameters of the N-bit branch susceptance loading units distributed at the head end and the tail end of the main transmission line are the same, each N-bit branch susceptance loading unit comprises N sections of microstrip transmission lines, each section of microstrip line in each N-bit branch susceptance loading unit is connected to the same position of the main transmission line through a switch, and each N-bit branch susceptance loading unit is used for controlling the microstrip transmission line with the same phase shift quantity to be controlled by the same control signal N which is the bit number.

2. The single-circuit multi-bit phase shifter based on the inverted-E structure of claim 1, wherein when N is 2, each two-bit branch susceptance unit comprises two microstrip transmission lines, and the two microstrip transmission lines at two ends of each two-bit branch susceptance unit are distributed on the same side or two sides of the main transmission line.

3. The single-circuit multi-bit phase shifter based on the inverted-E structure according to claim 1, wherein when N is 3, each three-bit branch susceptance unit comprises three microstrip transmission lines, the microstrip transmission lines controlled by the same control signal in the 3 three-bit branch susceptance loading units are divided into a group of microstrip lines, and each group of the divided microstrip lines is distributed on one side or two sides of the main transmission line.

4. A single-circuit multi-bit phase shifter based on an 'inverted E' structure according to any one of claims 1 to 3, wherein each microstrip line section in each N-bit branch susceptance loading unit is connected to the same position of the main transmission line through a PIN diode switch or other switch.

Technical Field

The invention discloses a single-circuit multi-bit phase shifter based on an inverted E structure, relates to a phase shifter and belongs to the technical field of basic electrical elements.

Background

Phase shifters are widely used in phased array systems to provide the necessary insertion phase for each element of the antenna array to perform adaptive beamforming and steering. With the development of phased array systems, a large number of phase shifters are required to implement a single system, and thus, the compact size, low insertion loss, and low power consumption become key design requirements of the phase shifters. With the advancement of cellular technology and the application of multiple-input multiple-output technology to handset manufacture, the size of the phase shifter is limited due to the limited space. Furthermore, the compactness of the phase shifter size is related to the development cost. Too high insertion loss will greatly reduce the transmit power and reduce the signal-to-noise ratio at the receiving end, thereby compromising the overall dynamic range of the communication system. Therefore, the phase shifter with more compact size, lower insertion loss and lower power consumption is developed, and has very important significance for the optimization of the phased array system.

A traditional N-bit digital phase shifter is generally formed by cascading N phase shifting units, and the minimum phase shifting quantity is (360 DEG/2)^N) In total of 2^NA phase-shifted state. The traditional switch type multi-bit phase shifter has the advantages that the number of single-pole double-throw switches formed by PIN diodes, field effect transistors or high electron mobility transistors is large, and the insertion loss is high. The phase shift quantity and standing-wave ratio of the traditional loading type multi-bit phase shifter change along with the frequency, so that the working frequency band is narrow, and the phase shifter is only suitable for the application occasions of phase shift with small degree. Conventional reflection-type multi-bit phase shifters, which typically consist of a 3dB coupler and two identical tunable reflective loads, have a narrow phase bandwidth. The application aims at providing a single-circuit multi-bit phase shifter with a compact structure.

Disclosure of Invention

The invention aims to provide a single-circuit multi-bit phase shifter based on an inverted E structure aiming at the defects of the background technology, the multi-bit phase shifting function is realized through a single phase shifting unit, a plurality of phase shifting bits share one main transmission line, and the technical problems of more phase shifting units, narrower relative bandwidth and large loss of the traditional phase shifter are solved.

The invention adopts the following technical scheme for realizing the aim of the invention:

the phase shifting unit of the phase shifter is formed by a main transmission line and three N-bit branch susceptance loading units, the input end of the main transmission line is the input port of the single-circuit multi-bit phase shifter, the output end of the main transmission line is the output port of the single-circuit multi-bit phase shifter, 3N-bit branch susceptance loading units are distributed on the same side or two sides of the main transmission line at equal intervals, and the 3N-bit branch susceptance loading units and the main transmission line are in an inverted E structure and have symmetry. Each N-bit branch susceptance loading unit comprises N PIN diode switches and N sections of microstrip transmission lines, and the N sections of microstrip transmission lines are loaded to the same position of the main transmission line through the N PIN diode switches. The parameters of N sections of microstrip transmission lines distributed in the N-bit branch susceptance loading units of the input port and the output port of the main transmission line are the same. The PIN diode switches connected with the microstrip transmission lines used for controlling the same phase shift amount in each N-bit branch susceptance loading unit are controlled by the same signal, and when the microstrip lines controlled by the same signal are connected with the main transmission line, the PIN diode switches are equal to a group of microstrip lines distributed at equal intervals and connected with the main transmission line. The PIN diode switches are loaded in parallel to the main transmission line, thereby achieving lower insertion loss. The main transmission line is reused by the plurality of branch susceptance loading units, avoiding the need for the main transmission line for each phase state.

The design principle of the single-circuit multi-bit phase shifter based on the inverted E structure is based on the single-circuit double-bit phase shifter of the inverted E structure, the single-circuit double-bit phase shifter comprises a main transmission line and three branch susceptance loading units, each branch susceptance loading unit is composed of two PIN diodes and two microstrip transmission lines, and the two microstrip transmission lines of each branch susceptance loading unit are symmetrically distributed on two sides of the main transmission line or on the same side of the main transmission line. Three branch susceptance loading units of the single-circuit double-bit phase shifter are symmetrically loaded on a main transmission line at equal intervals, and PIN diode switches connected with microstrip lines for controlling the same phase shift are controlled by the same signal. The single-circuit double-bit phase shifter based on the inverted E structure presents four phase shifting states: ϕ 0, ϕ 0+ ϕ 1, ϕ 0+ ϕ 2 and ϕ 0+ ϕ 1+ ϕ 2.

The design principle of the single-circuit multi-bit phase shifter based on the inverted E structure is based on the single-circuit three-bit phase shifter based on the inverted E structure, the single-circuit three-bit phase shifter comprises a main transmission line and three branch susceptance loading units, and each branch susceptance loading unit is composed of three PIN diodes and three sections of microstrip transmission lines. The microstrip lines used for the same phase-shifting quantity control in the three branch susceptance loading units are divided into a group, wherein the three microstrip transmission lines of the first group and the third group are positioned on the same side of the main transmission line, the three microstrip transmission lines of the second group are positioned on the other side of the main transmission line, the three microstrip transmission lines of each group are distributed on the same side or two sides of the main transmission line, and PIN diode switches connected with the three microstrip transmission lines of each group are controlled by the same signal. The single-circuit double-bit phase shifter based on the inverted E structure has eight phase shift states: ϕ 0, ϕ 0+ ϕ 1, ϕ 0+ ϕ 2, ϕ 0+ ϕ 3, ϕ 0+ ϕ 1+ ϕ 2, ϕ 0+ ϕ 1+ ϕ 3, ϕ 0+ ϕ 2+ ϕ 3, ϕ 0+ ϕ 1+ ϕ 2+ ϕ 3.

By adopting the technical scheme, the invention has the following beneficial effects:

(1) the single-circuit N-bit phase shifter based on the inverted E structure realizes whether a transmission line of a branch susceptance loading unit is loaded on a main transmission line or not through the on-off of a PIN diode switch, realizes that the N-bit branch susceptance loading unit is used for microstrip lines controlled by the same phase shift to be connected into the main transmission line through 3N PIN diodes for 3N-bit branch susceptance loading units, and repeatedly uses the main transmission line by the 3 branch susceptance loading units, so that three phase shift bits can be realized only by one phase shift unit, the requirement of each phase state on the main transmission line is avoided, the length and the circuit area of the main transmission line are reduced, and compared with a traditional N-bit digital phase shifter cascading a plurality of phase shift units, the number of independent reference microstrip lines corresponding to each phase state is reduced, and the size and the loss of the phase shifter are effectively reduced.

(2) The invention relates to a single-circuit multi-bit phase shifter based on an inverted E structure.A microstrip line for controlling the same phase shift quantity in an N-bit branch susceptance loading unit is distributed at equal intervals, the microstrip line connected to a main transmission line and the main transmission line form the single-circuit multi-bit phase shifter of the inverted E structure, and 2 is realized on the main transmission line with the wavelength less than one quarter through 3N switches^NCompared with the traditional N-bit digital phase shifter, the small-phase shifting state reduces the number of phase shifting units and the number of PIN diode switches, and effectively reduces the loss and the cost of the phase shifter.

Drawings

Fig. 1 is a block diagram of a single circuit multi-bit phase shifter of "inverted E" configuration.

Fig. 2 is a circuit diagram of a single-circuit multi-bit phase shifter based on an "inverted E" structure.

Fig. 3 is a circuit diagram of an N-bit susceptance loading unit r (r =1, 2, 3) of a single-circuit multi-bit phase shifter based on an "inverted E" structure.

Fig. 4 is a circuit diagram of a single-circuit two-bit phase shifter based on an "inverted E" structure.

FIGS. 5(a) to 5(d) show the S-parameter return loss S for four phase-shifting cases₁₁And insertion loss S₂₁And (5) a simulation graph.

Fig. 6 is a simulation diagram of the phase shift amount of the single-circuit two-bit phase shifter based on the "inverted E" structure.

Fig. 7 is a circuit diagram of a single-circuit three-bit phase shifter based on an "inverted E" structure.

Fig. 8 is a simulation diagram of the phase shift amount of the single-circuit three-bit phase shifter based on the "inverted E" structure.

FIGS. 9(a) to 9(h) show the S parameter return loss S for eight phase shifting cases₁₁And insertion loss S₂₁And (5) a simulation graph.

Detailed Description

The technical scheme of the invention is explained in detail in the following with reference to the attached drawings.

The single-circuit multi-bit phase shifter based on the 'reverse E' structure is composed of an upper-layer microstrip structure, a middle-layer dielectric plate and a lower-layer metal plate, wherein the upper-layer microstrip layer is attached to the upper surface of the middle-layer dielectric plate, and the lower-layer metal plate is attached to the lower surface of the middle-layer dielectric plate.

Fig. 1 is a block diagram of a single circuit multi-bit phase shifter based on an "inverted E" structure. The phase shifting unit of the single-circuit multi-bit phase shifter based on the inverted E structure realizes the multi-bit phase shifting function only through one main transmission line and three N-bit branch susceptance loading units, wherein the input end of the main transmission line is the input port of the single-circuit multi-bit phase shifter, and the output end of the main transmission line is the output port of the single-circuit multi-bit phase shifter. The characteristic impedance of the main transmission line is Z₀Electrical length of theta₀. The three N-bit branch susceptance loading units are loaded on the main transmission line at equal intervals, the N-bit branch susceptance loading unit 1 is loaded at the input end of the main transmission line, the N-bit branch susceptance loading unit 2 is loaded at the midpoint of the main transmission line, and the N-bit branch susceptance loading unit 3 is loaded at the output end of the main transmission line. Fig. 2 is a circuit diagram of a single-circuit multi-bit phase shifter based on an "inverted E" structure. Each N-bit susceptance loading unit comprises N PIN diode switches and N sections of microstrip transmission lines, and the N voltages control the on-off of the N PIN diode switches to realize whether the N sections of microstrip transmission lines are loaded on the main transmission line. Fig. 3 is a circuit diagram of an N-bit susceptance loading unit r (r =1, 2, 3) of a single-circuit multi-bit phase shifter based on an "inverted E" structure, where the N-bit susceptance loading unit r includes N PIN diode switches and N microstrip transmission lines, and each microstrip transmission line is controlled by a different signal. As shown in fig. 2, the microstrip lines for controlling the same amount of phase shift in the three N-bit branch susceptance loading units are divided into a group, and the PIN diode switches connected to the three microstrip transmission lines of each group are controlled by the same signal. Control modes of N different signals are 2^NThe realization is possible, N bits can be realized, and 2 bits can be totally^NThe phase state.

The first embodiment is as follows: single-circuit double-bit phase shifter based on inverted E structure

Fig. 4 is a circuit diagram of a single-circuit two-bit phase shifter based on an "inverted E" structure. The invention discloses a single-circuit double-bit phase shifter based on an inverted E structure, which comprises a main transmission line and three branch susceptance loading units, wherein the three branch susceptance loading units are loaded on the main transmission line at equal intervals, 2 groups of three microstrip transmission lines which are symmetrically distributed at equal intervals are arranged in the three double-bit branch susceptance units, the three microstrip transmission lines of each group are positioned on the same side of the main transmission line, and connected PIN diode switches are controlled by the same signal. Each double-bit susceptance loading unit comprises two PIN diode switches and two sections of microstrip transmission lines, and the two sections of microstrip transmission lines are symmetrically distributed on two sides of the main transmission line. When all PIN diode switches are disconnected, the whole circuit is equivalent to a main transmission line, the phase is ϕ 0, and ϕ 0 is a reference phase; when V1=3V and V2=0, three microstrip transmission lines on the upper side of the main transmission line are loaded on the main transmission line, and ϕ 0+ ϕ 1 phases are generated; when V1=0 and V2=3V, three microstrip transmission lines on the lower side of the main transmission line are loaded on the main transmission line, and ϕ 0+ ϕ 2 phases are generated; v1= V2=3V, and three microstrip transmission lines on both sides of the main transmission line are loaded on the main transmission line, resulting in a ϕ 0+ ϕ 1+ ϕ 2 phase.

In the first embodiment, a single-circuit two-bit phase shifter based on an inverted E structure with a center frequency of 2.4GHz and a phase shift amount of 22.5/45/67.5 is designed, and the bandwidth is designed to be 200 MHz. FIG. 5 shows the S-parameter return loss S for four phase shifting cases₁₁And insertion loss S₂₁Fig. 5(a) is an S-parameter simulation diagram when V1= V2= 0; fig. 5(b) is an S-parameter simulation diagram when V1=3V and V2= 0; fig. 5(c) is an S-parameter simulation diagram when V1=0 and V2= 3V; fig. 5(d) is an S-parameter simulation diagram when V1= V2= 3V. It can be seen from fig. 5 that the single-circuit two-bit phase shifter based on the "inverted E" structure has a low insertion loss. Fig. 6 is a simulation diagram of the phase shift amount of the single-circuit two-bit phase shifter based on the "inverted E" structure, where the phase of the circuit when V1= V2=0 is taken as the reference phase ϕ 0, V1=3V, and the phase difference between the phase of the circuit when V2=0 and the reference phase is ϕ 1, ϕ 1=22.5 °; the phase difference between the circuit phase and the reference phase is ϕ 2, ϕ 2=45 ° when V1=0 and V2= 3V; when V1= V2=3V, the phase difference between the circuit phase and the reference phase is ϕ 1+ ϕ 2, ϕ 1+ ϕ 2=67.5 °. As can be seen from fig. 6, the phase error of 22.5 ° is within ± 2 °, the phase error of 45 ° is within ± 4.8 °, and the phase error of 67.5 ° is within ± 6 ° in the 200MHz bandwidth.

The second embodiment is as follows: single-circuit three-bit phase shifter based on inverted E structure

Fig. 7 is a circuit diagram of a single-circuit three-bit phase shifter based on an "inverted E" structure. The invention discloses a single-circuit three-bit phase shifter based on an inverted E structure, which comprises a main transmission line and three branch susceptance loading units, wherein the three branch susceptance loading units are loaded on the main transmission line at equal intervals, 3 groups of three-section microstrip transmission lines at equal intervals are arranged in the three branch susceptance loading units, the three-section microstrip transmission lines of a first group and a third group are positioned on the same side of the main transmission line, the three-section microstrip transmission lines of a second group are positioned on the other side of the main transmission line, and PIN diode switches connected with the three-section microstrip transmission lines of each group are controlled by the same signal. Each branch susceptance loading unit comprises three PIN diode switches and three sections of microstrip transmission lines, and the three sections of microstrip transmission lines of each group are symmetrically distributed on the same side of the main transmission line. When all PIN diode switches are disconnected, the whole circuit is equivalent to a main transmission line, the phase is ϕ 0, and ϕ 0 is a reference phase; when V1=3V, V2= V3=0, the three-segment microstrip transmission line of the first group is loaded onto the main transmission line, resulting in a ϕ 0+ ϕ 1 phase; when V2=3V, V1= V3=0, the three-segment microstrip transmission line of the second group is loaded on the main transmission line, resulting in a phase ϕ 0+ ϕ 2; v3=3V, V1= V2=0, and the third set of three-segment microstrip transmission lines is loaded onto the main transmission line, resulting in a ϕ 0+ ϕ 3 phase; when V1= V2=3V, V3=0, the three-segment microstrip transmission lines of the first and second groups are loaded onto the main transmission line, resulting in a ϕ 0+ ϕ 1+ ϕ 2 phase; when V1= V3=3V, V1=0, the three-segment microstrip transmission lines of the first and third groups are loaded on the main transmission line, resulting in a ϕ 0+ ϕ 1+ ϕ 3 phase; when V2= V3=3V, V1=0, the three-segment microstrip transmission lines of the first and third groups are loaded on the main transmission line, resulting in a ϕ 0+ ϕ 2+ ϕ 3 phase; when V1= V2= V3=3V, the three-segment microstrip transmission lines of the first, second and third groups are loaded on the main transmission line, resulting in a ϕ 0+ ϕ 1+ ϕ 2+ ϕ 3 phase.

In the second embodiment, a single-circuit three-bit phase shifter based on an "inverted E" structure, which has a center frequency of 2.4GHz and a phase shift amount of 11.25 °/22.5 °/33.75 °/45 °/56.25 °/67.5 °/78.75 °, is designed, and a bandwidth of 200MHz is designed. Fig. 8 is a diagram of the amount of phase shift of a single circuit three-bit phase shifter based on an "inverted E" structure, the phase of the circuit being a reference phase ϕ 0 when V1= V2= V3= 0; a phase difference between the phase of the circuit and the reference phase is ϕ 1, ϕ 1=11.25 ° when V1=3V, V2= = V3= 0; the phase difference between the circuit phase and the reference phase is ϕ 2, ϕ 2=22.5 ° when V2=3V, V1= V3= 0; v1= V2=3V, and V3=0, the phase difference between the circuit phase and the reference phase is ϕ 1+ ϕ 2, ϕ 1+ ϕ 2=33.75 °; the phase difference between the circuit phase and the reference phase is ϕ 3, ϕ 3=45 ° when V3=3V, V1= V2= 0; v1= V3=3V, and V1=0, the phase difference between the circuit phase and the reference phase is ϕ 1+ ϕ 3, ϕ 1+ ϕ 3=56.25 °; v2= V3=3V, V1=0 hour of electricityThe phase difference between the road phase and the reference phase is ϕ 2+ ϕ 3, ϕ 2+ ϕ 3=67.5 °; when V1= V2= V3=3V, the phase difference between the circuit phase and the reference phase is ϕ 1+ ϕ 2+ ϕ 3, and ϕ 1+ ϕ 2+ ϕ 3=78.75 °. As can be seen from fig. 8, in the 200MHz bandwidth, the phase error of 11.25 ° is ± 0.75 °, the phase error of 22.5 ° is ± 0.6 °, the phase error of 33.75 ° is ± 2.3 °, the phase error of 45 ° is ± 3.6 °, the phase error of 56.25 ° is ± 4.4 °, the phase error of 67.5 ° is ± 5 °, and the phase error of 78.75 ° is ± 5.6 °. FIG. 9 shows the S parameter return loss S for eight phase shifting cases₁₁And insertion loss S₂₁Fig. 9(a) is an S-parameter simulation diagram when V1= V2= V3= 0; fig. 9(b) is an S-parameter simulation diagram when V1=3V and V2= = V3= 0; fig. 9(c) is an S-parameter simulation diagram when V2=3V and V1= V3= 0; fig. 9(d) is an S-parameter simulation diagram when V1= V2=3V and V3= 0; fig. 9(e) is an S-parameter simulation diagram when V3=3V and V1= V2= 0; fig. 9(f) is an S-parameter simulation diagram when V1= V3=3V and V2= 0; fig. 9(g) is an S-parameter simulation diagram when V2= V3=3V and V1= 0; fig. 9(h) is an S-parameter simulation diagram when V1= V2= V3= 3V. It can be seen from fig. 9 that the single-circuit three-bit phase shifter based on the "inverted E" structure has a low insertion loss.

The above embodiments are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modifications made on the basis of the technical scheme according to the technical idea of the present invention fall within the protection scope of the present invention.