阅读说明：本技术 一种基于共混聚合物介电层的ofet气体传感器制备方法 (Preparation method of OFET gas sensor based on polymer blend dielectric layer ) 是由 朱阳阳 王丽娟 董金鹏 苏和平 王璐 刘畅 于 2021-01-13 设计创作，主要内容包括：本发明是一种基于共混聚合物介电层的OFET气体传感器制备方法,采用溶液浸涂法,在ITO玻璃基底(3)上均匀涂覆聚合物混合溶液(1),通过调控聚苯乙烯和聚偏氟乙烯混合溶液(1)的组成和溶液浓度,调控退火时间、退火温度和退火环境,获得不同形貌的共混聚合物介电层(4),在共混聚合物介电层(4)上真空蒸镀四噻吩诱导层(6)和酞菁锌敏感层(7),最后蒸镀金电极(8)得到基于共混聚合物介电层的OFET气体传感器。(The invention relates to a preparation method of an OFET gas sensor based on a blended polymer dielectric layer, which comprises the steps of uniformly coating a polymer mixed solution (1) on an ITO glass substrate (3) by adopting a solution dip-coating method, regulating and controlling the composition and solution concentration of the polystyrene and polyvinylidene fluoride mixed solution (1), regulating and controlling annealing time, annealing temperature and annealing environment to obtain the blended polymer dielectric layers (4) with different shapes, carrying out vacuum evaporation on a tetrathiophene induction layer (6) and a zinc phthalocyanine sensitive layer (7) on the blended polymer dielectric layer (4), and finally carrying out gold evaporation on a gold electrode (8) to obtain the OFET gas sensor based on the blended polymer dielectric layer.)

1. A preparation method of an OFET gas sensor based on a blended polymer dielectric layer comprises the following steps: the method comprises the steps of immersing an ITO glass substrate (3) in a mixed solution (1) of polystyrene and polyvinylidene fluoride by a solution dip-coating method, optimizing the appearance of a blended polymer dielectric layer (4) by regulating and controlling the composition of the polystyrene and the polyvinylidene fluoride, the concentration of the mixed solution (1), dip-coating time and a taking-out mode, and regulating and controlling annealing temperature, time and environment, then carrying out vacuum evaporation on a tetrathiophene induction layer (6) and a zinc phthalocyanine sensitive layer (7), and finally carrying out gold evaporation on a gold electrode (8) to obtain the OFET gas sensor based on the blended polymer dielectric layer.

2. The method for preparing the OFET gas sensor based on the blended polymer dielectric layer as claimed in claim 1, wherein the mixed solution (1) is composed of polystyrene, polyvinylidene fluoride and toluene, the mass ratio of the polystyrene to the polyvinylidene fluoride is between 1: 0.5 and 1: 5, and the concentration of the mixed solution (1) is 5-50 mg/ml.

3. The OFET gas sensor preparation method based on the blended polymer dielectric layer as claimed in claim 1, characterized in that the polymer mixed solution (1) is uniformly coated on the ITO glass substrate (3) by adopting a solution dip coating method, the dip coating time is 1-10 minutes, and the taking out mode comprises horizontal taking out, vertical taking out and inclined taking out.

4. The method for preparing an OFET gas sensor based on the polymer blend dielectric layer as claimed in claim 1, wherein the polymer blend dielectric layer (4) is formed by curing and drying through an annealing method, the annealing temperature is 50-100 ℃, the annealing time is 5-30 minutes, and the annealing environment comprises vacuum annealing, toluene steam annealing and atmospheric environment annealing.

5. The method for preparing an OFET gas sensor based on the polymer blend dielectric layer as claimed in claim 1, wherein the tetrathiophene induced layer is deposited on the polymer blend dielectric layer (4) by vacuum evaporationA conductive layer (6) and a zinc phthalocyanine sensitive layer (7) with a vacuum degree of 5.0X 10^-4Pa, the thickness of the tetrathiophene inducing layer (6) is 2-5 nm, the substrate temperature is 185 ℃, the thickness of the zinc phthalocyanine sensitive layer (7) is 10-50 nm, the substrate temperature is 185 ℃, and finally the gold electrode (8) is evaporated to obtain the OFET gas sensor based on the polymer blend dielectric layer.

Technical Field

The invention relates to a preparation method of an OFET gas sensor based on a polymer blend dielectric layer, belonging to the technical field of organic gas sensors.

Background

Organic Field Effect Transistors (OFETs) based on polymer dielectrics have attracted much research interest due to their low cost, low temperature and solution processability, large area fabrication, flexibility and biocompatibility. The method can be widely applied to different fields, such as gas sensors, flexible displays, electronic skins, radio frequency identification tags and the like. Transistors are the basic components that make up signal processing circuits and systems, and OFETs based on solution processable polymeric dielectric materials and organic semiconductor materials have a number of competing advantages that enable easy hybrid integration of multifunctional materials.

In recent years, much effort has been put into research and development of high-performance polymers and small-molecule organic semiconductor materials. For p-type and n-type organic semiconductors, over 10 cm has been reported in the literature²V^-1s^-1High mobility values of (a). However, most of these studies used SiO₂As gate dielectrics, hydroxyl groups have an influence on the molecular packing and carrier transport of organic semiconductors, and solution processable polymers and hybrid dielectrics are reliable candidates due to their low temperature processing and excellent mechanical flexibility. Therefore, finding a suitable polymer dielectric to match a high performance organic semiconductor is crucial to obtain OFET gas sensors with desirable device properties, including high carrier mobility, high on-off ratio, low threshold voltage and good stability.

The method comprises the steps of uniformly coating a polymer mixed solution on an ITO glass substrate by adopting a solution dip-coating method, preparing a blended polymer dielectric layer with a three-dimensional shape by regulating and controlling polymer composition, solution concentration, a dip-coating process and a film forming process, and evaporating an organic semiconductor material and a gold electrode by adopting a vacuum evaporation method to form a three-dimensional gas sensitive layer so as to obtain the high-performance OFET gas sensor.

Disclosure of Invention

The invention relates to a preparation method of an OFET gas sensor based on a blended polymer dielectric layer, which further reduces the preparation cost of the gas sensor, can realize effective regulation and control of a three-dimensional sensitive film, enhances the gas response, reduces the response and recovery time of the sensor, and further improves the practical application capability of the sensor.

The gas sensor is mainly prepared by adopting a solution dip-coating method, as shown in figure 1, firstly, a mixed solution (1) of polystyrene and polyvinylidene fluoride is prepared and placed in a closed container (2), a clean ITO glass substrate (3) is immersed in the mixed solution (1), the ITO glass substrate (3) is taken out and uniformly coated with a layer of polymer mixed solution (1), the mixed solution is placed in an annealing device (5) for annealing to remove a solvent, a mixed polymer dielectric layer (4) of polystyrene and polyvinylidene fluoride is formed, then, a tetrathiophene and zinc phthalocyanine organic semiconductor material is evaporated in vacuum to form a tetrathiophene induction layer (6) and a zinc phthalocyanine sensitive layer (7), and finally, a gold electrode (8) is evaporated to obtain the OFET gas sensor based on the mixed polymer dielectric layer.

Drawings

FIG. 1: the preparation process of the blended polymer dielectric layer is shown schematically.

FIG. 2: OFET gas sensor structure schematic diagram based on polymer blend dielectric layer.

Detailed Description

The invention discloses a preparation method of an OFET gas sensor based on a blended polymer dielectric layer, and the specific implementation process is shown in figures 1 and 2.

a) Weighing polystyrene and polyvinylidene fluoride with different mass ratios, adopting toluene as a solvent, preparing polymer mixed solutions (1) with different concentrations, and placing the polymer mixed solutions in a closed container (2).

b) Immersing the cleaned ITO glass substrate (3) in the polymer mixed solution (1), uniformly coating a layer of the polymer mixed solution (1) on the ITO glass substrate (3) after being taken out, and changing the coating amount of the polymer mixed solution (1) by regulating and controlling the immersion time and the taking-out mode.

c) And (3) placing the ITO glass substrate (3) coated with the polymer mixed solution (1) in a vacuum annealing device (5), and regulating and controlling annealing temperature, annealing time and annealing environment to obtain the polymer blend dielectric layer (4) with different surface morphologies.

d) And (3) evaporating a tetrathiophene induction layer (6) and a zinc phthalocyanine sensitive layer (7) on the polymer blend dielectric layer (4) in vacuum, and finally evaporating a gold electrode (8) to obtain the OFET gas sensor based on the polymer blend dielectric layer.