阅读说明：本技术 变阻器钝化层及其制造方法 (Varistor passivation layer and method for producing same ) 是由 P.拉文德拉纳坦 M.贝罗里尼 于 2019-07-17 设计创作，主要内容包括：总体上公开了包含钝化层的变阻器和形成这样的变阻器的方法。变阻器包括陶瓷主体,该陶瓷主体包括多个交替的介电层和电极层。变阻器还包括在第一端表面上的第一外部端子和在与第一端表面相对的第二端表面上的第二外部端子,其中至少两个侧表面在第一端表面和第二端表面之间延伸。变阻器还包括在陶瓷主体的至少一个侧表面上的在第一外部端子与第二外部端子之间的钝化层。钝化层包括磷酸盐和金属添加剂,该金属添加剂包括碱金属、碱土金属或其混合物。钝化层的平均厚度为0.1微米至30微米。(Varistors including passivation layers and methods of forming such varistors are generally disclosed. A varistor comprises a ceramic body comprising a plurality of alternating dielectric layers and electrode layers. The varistor further comprises a first external terminal on a first end surface and a second external terminal on a second end surface opposite the first end surface, wherein at least two side surfaces extend between the first end surface and the second end surface. The varistor further includes a passivation layer between the first and second external terminals on at least one side surface of the ceramic body. The passivation layer includes a phosphate and a metal additive including an alkali metal, an alkaline earth metal, or a mixture thereof. The passivation layer has an average thickness of 0.1 to 30 microns.)

1. A varistor, comprising:

a ceramic body comprising a plurality of alternating dielectric layers and electrode layers,

a first external terminal on a first end surface and a second external terminal on a second end surface opposite the first end surface, at least two side surfaces extending between the first end surface and the second end surface,

a passivation layer on at least one side surface of the ceramic body between the first and second external terminals, wherein the passivation layer includes a phosphate and a metal additive comprising an alkali metal, an alkaline earth metal, or a mixture thereof, wherein an average thickness of the passivation layer is from 0.1 to 30 microns.

2. The varistor of claim 1, wherein the metal additive comprises an alkali metal.

3. The varistor of claim 1, wherein the alkali metal comprises potassium.

4. The varistor of claim 1, wherein the metal additive comprises an alkaline earth metal.

5. The varistor of claim 1, wherein the alkaline earth metal comprises magnesium.

6. The varistor of claim 1, wherein the alkaline earth metal comprises calcium.

7. The varistor of claim 1, wherein the elemental ratio of moles of phosphorus of said phosphate to moles of said metal additive may be from 0.01 to 100 as determined by energy dispersive x-ray spectroscopy.

8. The varistor of claim 1, wherein the dielectric layer comprises a dielectric material comprising zinc oxide.

9. The varistor of claim 8, wherein the phosphate comprises zinc phosphate.

10. The varistor of claim 1, further comprising metal plating on said first and second external terminals.

11. The varistor of claim 10, wherein the metal plating comprises nickel.

12. The varistor of claim 10, wherein the metal plating comprises tin.

13. The varistor of claim 1, wherein the varistor has a breakdown voltage of 4 volts or greater.

14. The varistor of claim 1, wherein the varistor has a breakdown voltage of 10 volts or greater.

15. The varistor of claim 1, wherein the varistor has a breakdown voltage of from 20 volts to 80 volts.

16. The varistor of claim 1, wherein the varistor has a breakdown voltage of at least 90% of an initial breakdown voltage after being subjected to a life test of 500 hours at an operating voltage of 32 volts and a temperature of 125 ℃.

17. The varistor of claim 16, wherein the varistor has a breakdown voltage of at least 90% of an initial breakdown voltage after being subjected to a 1000 hour life test at an operating voltage of 32 volts and a temperature of 125 ℃.

18. The varistor of claim 1, wherein the varistor has a breakdown voltage of at least 90% of an initial breakdown voltage after being subjected to a temperature humidity bias test at a temperature of 85 ℃, a humidity of 85%, and an operating voltage of 32 volts for 500 hours.

19. The varistor of claim 18, wherein the varistor has a breakdown voltage of at least 90% of an initial breakdown voltage after being subjected to a temperature humidity bias test at a temperature of 85 ℃, a humidity of 85%, and an operating voltage of 32 volts for 1000 hours.

20. A method of manufacturing a varistor as claimed in claim 1, the method comprising:

applying a solution containing phosphoric acid and a metal additive comprising an alkali metal, an alkaline earth metal, or a mixture thereof to a part comprising the ceramic body, the first external terminal, and the second external terminal.

21. The method of claim 20, wherein the solution comprises an inorganic compound containing the metal additive.

22. The method of claim 21, wherein the metal additive comprises an alkali metal.

23. The method of claim 22, wherein the alkali metal comprises potassium.

24. The method of claim 21, wherein the metal additive comprises an alkaline earth metal.

25. The method of claim 24, wherein the alkaline earth metal comprises magnesium.

26. The method of claim 24, wherein the alkaline earth metal comprises calcium.

27. The method of claim 21, wherein the compound comprises an inorganic salt.

28. The method of claim 27, wherein the inorganic salt comprises a carbonate salt.

29. The method of claim 27, wherein the inorganic salt comprises a sulfate, a nitrate, a halide, or a mixture thereof.

30. The method of claim 21, wherein the compound comprises a base.

31. The method of claim 30, wherein the base comprises a hydroxide.

32. The method of claim 20, wherein the solution further comprises a pH adjusting agent.

33. The method of claim 32, wherein the pH adjuster comprises an alkaline pH adjuster.

34. The method of claim 20, wherein the phosphoric acid is present in the solution in an amount from 0.01 wt.% to 10 wt.%.

35. The method of claim 21, wherein the amount of the compound present in the solution is from 0.01 wt.% to 10 wt.%.

36. The method of claim 20, wherein the elemental ratio of moles of phosphorus of the phosphoric acid to moles of the metal additive may be from 0.01 to 100.

37. The method of claim 20, wherein the dielectric material of the dielectric layer of the ceramic body comprises zinc oxide and applying the solution results in a reaction that produces zinc phosphate.

38. The method of claim 20, further comprising sintering at a temperature of 500 ℃ to 900 ℃.

39. The method of claim 20, further comprising forming a first metal plating on the first and second external terminals.

40. The method of claim 39, further comprising forming a second metal plating layer on the first metal plating layer.

Background

Varistors are voltage dependent nonlinear resistors and have been used as surge absorbing electrodes, lightning arresters and voltage regulators. Varistors are typically constructed from a plurality of stacked dielectric-electrode layers. During fabrication, these layers may typically be pressed and formed into a vertically stacked structure. External terminals and plating may then be formed on the end faces as well as the ends of the side faces for electrical contact and surface mounting. Typically, the plating layer is formed using a plating solution. However, such plating solutions have a tendency to react with the exposed ceramic of the varistor. Although passivation techniques have been employed to protect the ceramic from plating, these techniques have typically resulted in a degradation of the quality of the electrical path between the inner electrode and the terminal plating.

There is therefore a need to provide an improved method for passivating any exposed ceramic of a varistor prior to plating external terminals and for providing a varistor manufactured according to such a process.

Disclosure of Invention

According to one embodiment of the invention, a varistor is disclosed. A varistor comprises a ceramic body comprising a plurality of alternating dielectric layers and electrode layers. The varistor further comprises a first external terminal on a first end surface and a second external terminal on a second end surface opposite the first end surface, wherein at least two side surfaces extend between the first end surface and the second end surface. The varistor further includes a passivation layer on at least one side surface of the ceramic body between the first and second external terminals. The passivation layer comprises a phosphate and a metal additive comprising an alkali metal, an alkaline earth metal, or a mixture thereof. The passivation layer has an average thickness of from 0.1 to 30 microns.

According to another embodiment of the invention, a method of forming a varistor is disclosed. The method comprises applying a solution comprising phosphoric acid and a metal additive comprising an alkali metal, an alkaline earth metal, or a mixture thereof to a part comprising: the ceramic body includes a plurality of alternating dielectric layers and electrode layers, a first external terminal on a first end surface, a second external terminal on a second end surface opposite the first end surface, and at least two side surfaces extending between the first end surface and the second end surface. The varistor further includes a passivation layer on at least one side surface of the ceramic body between the first and second external terminals. The passivation layer has an average thickness of from 0.1 to 30 microns.

Drawings

A full and enabling disclosure of the present subject matter, including the best mode thereof, directed to one of ordinary skill in the art, is set forth in the specification, which makes reference to the appended figures, in which:

fig. 1 illustrates a varistor including a passivation layer in accordance with aspects of the present disclosure;

2a-2c illustrate a method of manufacturing a varistor including a passivation layer in accordance with aspects of the present disclosure;

FIG. 3 illustrates surface morphologies of an exposed ceramic body and various passivation layers according to examples of the present disclosure;

fig. 4 illustrates surface morphologies of various passivation layers after sintering, according to examples of the present disclosure; and

fig. 5 and 6 illustrate results of a life test and a temperature humidity bias test according to examples of the present disclosure.

Repeat use of reference characters throughout the present specification and appended drawings is intended to represent same or analogous features, electrodes, or steps of the present subject matter.

Detailed Description

It is to be understood by one of ordinary skill in the art that the present disclosure is a description of exemplary embodiments only, and is not intended as limiting the broader aspects of the present subject matter, which broader aspects are embodied in the exemplary construction.

In general, the present disclosure is directed to a varistor having a passivation layer and a method of manufacturing the same. Generally, the passivation layer is an electrically insulating layer, in particular an inorganic electrically insulating layer, which may be used to protect or passivate any exposed ceramic prior to plating of the external terminals. According to the invention, such a passivation layer is formed from a modified phosphoric acid solution. The inventors have found that a modified phosphoric acid solution as further described herein may enhance the properties of the passivation layer and the corresponding varistor.

For example, metal additives may allow for better control of the morphology and thickness of the passivation layer. In particular, by employing metal additives as disclosed herein, the structure and morphology of the passivation layer changes as the varistor and passivation layer calcine. In particular, the crystal structure generally collapses to cover the exposed glassy surface of the ceramic. Such variations are discussed further below with respect to examples and fig. 3-4. As illustrated in fig. 4, in comparison to fig. 3, particularly after calcination at 650 ℃, less than 50% of the surface area, such as less than 40% of the surface area, such as less than 30% of the surface area, such as less than 20% of the surface area, such as less than 10% of the surface area, such as less than 5% of the surface area may comprise platelets (platelets) as generally understood in the art. Such surface area may be the entire surface area of the passivation layer or may be at least 50 μm²Such as at least 100 μm²Such as at least 250 μm²Such as at least 500 μm²Such as at least 1000 μm²Such as at least 5000 μm²Such as at least 10,000 μm²Such as at least 25,000 μm²Such as at least 50,000 μm²Such as at least 100,000 μm²Such as at least 150,000 μm²Of (3) a passivation layer.

In turn, the inventors have found that the passivation layer is more stable and non-conductive. Furthermore, by such control, the present inventors were able to obtain a passivation layer having an average thickness of from 0.1 to 30 micrometers. In general, the average thickness of the passivation layer may be 30 microns or less, such as 20 microns or less, such as 15 microns or less, such as 10 microns or less, such as 8 microns or less, such as 5 microns or less. The thickness of the passivation layer may be 0.1 micrometer or more, such as 0.5 micrometer or more, such as 1 micrometer or more, such as 2 micrometer or more, such as 3 micrometer or more, such as 5 micrometer or more.

In addition to controlling the properties of the passivation layer, varistors including the passivation layer as disclosed herein may exhibit improved electrical performance. Typically, when the varistor and corresponding passivation layer are fired at high temperatures, the resulting varistor will exhibit an overall low breakdown voltage. However, the inventors have found that by using a modified phosphoric acid solution containing a metal additive as disclosed herein, the breakdown voltage of the varistor may be 4 volts or more, such as 5 volts or more, such as 10 volts or more, such as 15 volts or more, such as 20 volts or more, such as 25 volts or more, such as 30 volts or more, such as 40 volts or more, such as 45 volts or more, such as 50 volts or more. The breakdown voltage may be 300 volts or less, such as 250 volts or less, such as 200 volts or less, such as 175 volts or less, such as 150 volts or less, such as 125 volts or less, such as 100 volts or less. Less than, for example, 90 volts or less, such as 80 volts or less, such as 70 volts or less, such as 60 volts or less, such as 55 volts or less.

Although the initial breakdown voltage may be relatively high, the inventors have found that there may be minimal variation in such breakdown voltage even after various tests are conducted. In particular, such breakdown voltage can be achieved even after a lifetime test of 100 hours at an operating voltage of 32 volts and a temperature of 125 ℃. For example, the breakdown voltage may be at least 70%, such as at least 80%, such as at least 85%, such as at least 90%, such as at least 95%, such as at least 97%, such as at least 98%, such as at least 99% of the initial breakdown voltage. Furthermore, such breakdown voltage may be achieved even after 200 hours of testing, and in one embodiment, even after 500 hours of testing. Such breakdown voltage can be achieved even after 1000 hours of testing.

Furthermore, such breakdown voltage can also be achieved after a temperature humidity bias test of 100 hours at a temperature of 85 ℃, 85% humidity, 32 volts operating voltage. For example, the breakdown voltage may be at least 70%, such as at least 80%, such as at least 85%, such as at least 90%, such as at least 95%, such as at least 97%, such as at least 98%, such as at least 99% of the initial breakdown voltage. Furthermore, such breakdown voltage may be achieved even after 200 hours of testing, and in one embodiment, even after 500 hours of testing. Such breakdown voltage can be achieved even after 1000 hours of testing.

In addition to breakdown voltage, varistors as disclosed herein may also exhibit other improved electrical properties that may be suitable for particular applications. For example, varistors may also exhibit low leakage currents. For example, the leakage current at an operating voltage of 32 volts may be about 1000 μ A or less, such as about 500 μ A or less, such as about 100 μ A or less, such as about 50 μ A or less, such as about 25 μ A or less, such as about 20 μ A or less, such as about 15 μ A or less, such as about 10 μ A or less, such as about 5 μ A or less, such as about 3 μ A or less, such as about 2 μ A or less, such as about 1 μ A or less, such as about 0.5 μ A or less, such as about 0.1 μ A or less. The leakage current at an operating voltage of 32 volts may be greater than 0 μ A, such as about 0.0001 μ A or greater, such as about 0.001 μ A or greater, such as about 0.01 μ A or greater, such as about 0.05 μ A or greater, such as about 0.1 μ A or greater, such as about 0.15 μ A or greater, such as about 0.2 μ A or greater, such as about 0.25 μ A or greater, such as about 0.3 μ A or greater.

Further, the leakage current may be within the above range even after a lifetime test of 100 hours at an operating voltage of 32 volts and a temperature of 125 ℃. In particular, such leakage current may be achieved even after 200 hours of testing, and in one embodiment, even after 500 hours of testing. Such leakage current can be realized even if the test is performed for 1000 hours.

Further, the leakage current may be within the above range even after the temperature humidity bias test of 100 hours at a temperature of 85 ℃, a humidity of 85%, and an operating voltage of 32 volts. In particular, such leakage currents may be achieved even after 200 hours of testing and, in one embodiment, even after 500 hours of testing. Such leakage current can be achieved even after 1000 hours of testing.

In some embodiments, the varistor may also exhibit a relatively low clamping voltage (clipping voltage). In particular, the clamping voltage of the varistor may be 40 volts or less. For example, in some embodiments, the clamping voltage of the varistor may be 12 volts or greater, such as 15 volts or greater, such as 20 volts or greater, such as 25 volts or greater, such as 30 volts or greater, such as 40 volts or greater, such as 45 volts or greater, such as 50 volts or greater. The clamping voltage may be 500 volts or less, such as 400 volts or less, such as 300 volts or less, such as 250 volts or less, such as 200 volts or less, such as 175 volts or less, such as 150 volts or less, such as 125 volts or less, such as 100 volts or less, such as 90 volts or less, such as 80 volts or less, such as 70 volts or less, such as 60 volts or less, such as 55 volts or less, such as 50 volts or less, such as 40 volts or less, such as 30 volts or less, such as 25 volts or less.

In some embodiments, the varistor may also exhibit low capacitance. For example, the capacitance of the varistor may be about 0.5pF or greater, such as about 1pF or greater, such as about 5pF or greater, such as about 10pF or greater, such as about 25pF or greater, such as about 50pF or greater, such as about 100pF or greater, such as about 200pF or greater, such as about 250pF or greater, such as about 300pF or greater, such as about 400pF or greater, such as about 450pF or greater, such as about 500pF or greater, such as about 1,000pF or greater, such as about 5,000pF or greater, such as about 10,000pF or greater, such as about 25,000pF or greater. The capacitance of the varistor may be about 40,000pF or less, such as about 30,000pF or less, such as about 20,000pF or less, such as about 10,000pF or less, such as about 5,000pF or less, such as about 2,500pF or less, such as about 1,000pF or less, such as about 900pF or less, such as about 800pF or less, such as about 750pF or less, such as about 700pF or less, such as about 600pF or less, such as about 550pF or less, such as about 500pF or less, such as about 250pF or less, such as about 150pF or less, such as about 100pF or less, such as about 50pF or less.

Referring now to the drawings, exemplary embodiments of the disclosure will now be discussed in detail. Fig. 1 illustrates one embodiment of a varistor 10 in accordance with aspects of the present disclosure. The varistor may comprise a ceramic body 12. In general, the ceramic body 12 includes two opposing end surfaces (i.e., a first end surface 26a and a second end surface 26b) and four side surfaces (i.e., a first side surface 28 and a second side surface 30 opposite the first side surface 28, a third side surface, and a fourth side surface (not shown) opposite the third side surface).

The varistor 10, and in particular the ceramic body 12, may comprise a plurality of dielectric layers 14. Such a dielectric layer 14 may be generally planar. The dielectric layer 14 may comprise any suitable dielectric material as is generally known in the art. For example, the dielectric material may comprise barium titanate, zinc oxide, iron oxide, mixtures thereof, or any other suitable dielectric material. In this aspect, the dielectric material may be a metal oxide. The metal oxide may be zinc oxide or iron oxide. In one embodiment, the metal oxide may be zinc oxide.

Various additives may be included in the dielectric material, for example, the additives create or enhance the voltage-dependent resistance of the dielectric material. For example, in some embodiments, the additive may comprise the following oxides: cobalt, bismuth, manganese, antimony, nickel, chromium, silicon, or combinations thereof. In some embodiments, the additive comprises at least two, such as at least three, such as at least four, such as at least five, such as at least six, such as all seven of the above-described oxide additives. In some embodiments, the additive may comprise the following oxides: gallium, aluminum, titanium, lead, barium, vanadium, tin, boron, or combinations thereof. The additive may also comprise a nitrate salt, such as aluminum nitrate. In addition, the additive may also comprise an acid, such as boric acid.

The dielectric material may be doped with additive(s) in the following ranges: from about 0.1 mol% or more, such as about 0.5 mol% or more, such as about 1 mol% or more, such as about 2 mol% or more to about 6 mol% or less, such as about 4 mol% or less, such as about 3 mol% or less, such as about 2 mol% or less. The average grain size of the dielectric material can contribute to the nonlinear properties of the dielectric material. In some embodiments, the average grain size may range from about 10 to 100 microns, and in some embodiments, from about 20 to 80 microns.

Referring back to fig. 1, the varistor 10 may further comprise an electrode layer comprising the first electrode 16a and an electrode layer comprising the second electrode 16 b. Such an electrode layer may be flat as a whole. The electrode layers may be provided in an alternating configuration. Furthermore, the electrode layers may be provided in an alternating arrangement with the dielectric layers 14 such that the electrode layers assume a staggered configuration. In this regard, the ceramic body may be formed from a plurality of alternating dielectric layers 14 and electrode layers 16a and 16 b. Further, the ceramic body 12 may be formed into a unitary structure by pressing such layers together. The layers may be sintered to form a unitary structure prior to passivation.

Electrodes 16a and 16b may comprise any suitable electrode material as is generally known in the art. For example, the electrode material may comprise and be formed from a conductive metal such as palladium, silver, platinum, copper, nickel, tin, alloys thereof, mixtures thereof, or other suitable conductive metal, such as a conductive metal that can be printed on the dielectric layer.

Further, the shape of the electrodes 16a and 16b and the configuration of the electrodes 16a and 16b within a particular layer between the dielectric layers 14 are not limiting to the invention. For example, the electrodes 16a and 16b may have a rectangular or T-shape or any other shape known in the art. Further, the ceramic body 12 and/or the electrode layers may include stub plates (stub plates), dummy electrodes, floating electrodes, electrodeless or other types of electrodes as are generally known in the art adjacent the end surfaces. Further, it should also be understood that the present disclosure is not limited to any particular number of dielectric layers 14 and electrode layers 16a and 16 b.

Referring back to fig. 1, the electrodes 16a and 16b may be electrically connected to external terminals 18a and 18b, respectively. In this regard, the electrode may be connected to only one external terminal. For example, the first electrode 16a may be connected to the first external terminal 18a, and the second electrode 16b may be connected to the second external terminal 18 b. In this regard, each of the electrodes 16a and 16b is connected to an external terminal 18a and 18b, respectively. The front edges of the electrodes 16a and 16b, which are not physically connected to the respective external terminals 18a and 18b, extend or protrude toward the opposite external terminals 18b and 18a, respectively. In this regard, in one embodiment, the electrodes 16a and 16b may overlap.

The electrodes 16a and 16b may be connected to inner surfaces of the external terminals 18a and 18b adjacent to the electrodes 16a and 16 b. In this regard, the external terminals 18a and 18b also include an outer surface opposite the inner surface to deposit or form the metal plating layers 22a and 22 b.

The first external terminal 18a may be present on the first end surface 26a, and the second external terminal 18b may be present on the second end surface 26 b. However, the external terminals 18a and 18b may partially extend onto at least one side surface. In one embodiment, the external terminals 18a and 18b may partially extend onto at least two side surfaces. In other embodiments, the external terminals 18a and 18b may partially extend onto at least all four side surfaces. For example, the external terminals 18a and 18b may be present on both end surfaces 26a and 26b and extend over the corners to partially cover the edges or ends of the side surfaces. In this aspect, the ceramic body 12 may include a gap 32 on at least one side surface (such as at least two side surfaces formed between the external terminals 18a and 18 b). Such gaps 32 may be present on all four side surfaces of the ceramic body 12 of the varistor 10. Further, the external terminals 18a and 18b may not be present in such gaps, so that the ceramic body 12 has an exposed surface not covered by the external terminals 18a and 18 b.

The external terminals 18a and 18b may comprise any suitable material as is generally known in the art. For example, the material may comprise and be formed from a conductive metal, such as silver, tin, lead, palladium, platinum, copper, nickel, alloys or mixtures thereof, or any other suitable conductive metal, such as a conductive metal that can be provided as an external terminal of a varistor. The external terminals 18a and 18b may further include glass frit (glass frit).

The external terminals 18a and 18b may include metal plating layers 22a and 22b formed thereon, respectively. The metal plating layers 22a and 22b may comprise one metal plating layer or more than one metal plating layer, such as at least two metal plating layers, such as three metal plating layers. The metal platings 22a and 22b may comprise any suitable material as is generally known in the art. For example, the material may contain and be formed from a conductive metal, such as platinum, copper, palladium, silver, nickel, tin, lead, alloys thereof, mixtures thereof, or other suitable conductive metals, such as can be provided as a metallization layer.

A layer of chromium/nickel applied by typical processing techniques, such as sputtering, followed by a layer of silver/lead may be used as the outer metallization of the external terminals. Alternatively, the metal plating may comprise a layer of nickel followed by a layer of tin or tin/lead alloy. In this aspect, the varistor 10 may include at least one metal plating layer comprising nickel. Furthermore, the varistor 10 may comprise at least one metal plating comprising tin (such as tin/lead).

The thickness of the plating(s) is not necessarily limited in the present invention and may be any thickness desired, particularly for a particular application. Thus, the thickness may be 0.1 micron or more, such as 0.5 micron or more, such as 1 micron or more, such as 2 microns or more, such as 3 microns or more; to 10 microns or less, such as 8 microns or less, such as 6 microns or less, such as 5 microns or less, such as 3 microns or less. However, it should be understood that the thickness of the plating layer(s) may be less than 0.1 microns or may be greater than 10 microns.

The varistor 10 and the ceramic body 12 may further comprise a passivation layer 24. In general, the passivation layer 24 may be an electrically insulating inorganic layer. The passivation layer 24 may be formed in the gap 32 on at least one side surface, such as at least two side surfaces formed between the external terminals 18a and 18 b. As indicated above, such gaps 32 may be present on all four side surfaces of the ceramic body 12 of the varistor 10. In this regard, the passivation layer 24 may be formed in the gap 32 on all side surfaces. A passivation layer 24 is formed on the ceramic body 12 between the external terminals 18a and 18b to protect the ceramic/dielectric during subsequent processing (e.g., formation of metallization).

As disclosed herein, the passivation layer 24 may be a phosphate passivation layer 24 formed from a modified phosphoric acid solution. When the dielectric layer 14 is made of zinc oxide, the passivation layer 24 may include zinc phosphate. In addition, the passivation layer may include a metal additive. In one embodiment, the metal additive may be a non-conductive metal.

In particular, the passivation layer 24 may include a metal additive including an alkali metal, an alkaline earth metal, or a combination thereof. In one embodiment, the passivation layer 24 may comprise an alkali metal. In another embodiment, the passivation layer 24 may comprise an alkaline earth metal. In another embodiment, the passivation layer 24 may comprise a combination of alkali and alkaline earth metals.

The alkali metal may be any alkali metal suitable for integration into the passivation layer 24. For example, the alkali metal may comprise lithium, sodium, potassium, or mixtures thereof. In one embodiment, the alkali metal may comprise sodium, potassium, or a mixture thereof. In one other embodiment, the alkali metal may comprise potassium. In another other embodiment, the alkali metal may comprise sodium.

The alkaline earth metal may be any alkaline earth metal suitable for incorporation into the passivation layer 24. For example, the alkaline earth metal may comprise magnesium, calcium, strontium, barium, or mixtures thereof. In particular, the alkaline earth metal may comprise magnesium, calcium, barium or mixtures thereof. In one embodiment, the alkaline earth metal may comprise magnesium, calcium, or a mixture thereof. In one other embodiment, the alkaline earth metal may comprise magnesium. In another other embodiment, the alkaline earth metal may comprise calcium.

In a particular embodiment, the passivation layer 24 includes a combination of alkali and alkaline earth metals. In this aspect, the combination may comprise alkali metal comprising lithium, sodium, potassium, rubidium, cesium, francium, or mixtures thereof, and alkaline earth metal comprising beryllium, magnesium, calcium, strontium, barium, radium, or mixtures thereof. In particular, the combination may comprise an alkali metal comprising lithium, sodium, potassium or mixtures thereof and an alkaline earth metal comprising magnesium, calcium or mixtures thereof. For example, the combination may comprise potassium as well as magnesium and/or calcium, such as potassium, magnesium and calcium.

The molar (or elemental) ratio of the moles (or number of atoms) of phosphorus of the phosphate to the moles (or number of atoms) of the metal additive in the passivation layer (or surface of the passivation layer) may be 0.01 or more, such as 0.1 or more, such as 0.2 or more, such as 0.25 or more, such as 0.5 or more, such as 1 or more, such as 2 or more, such as 4 or more, such as 5 or more, such as 8 or more, such as 10 or more. The molar (or elemental) ratio of the moles (or number of atoms) of phosphorus of the phosphate to the moles (or number of atoms) of the metal additive may be 100 or less, such as 75 or less, such as 50 or less, such as 40 or less, such as 25 or less, such as 15 or less, such as 10 or less, such as 7 or less, such as 5 or less, such as 4 or less, such as 3 or less. Such a ratio may be determined using various techniques as are generally known in the art, such as energy dispersive x-ray spectroscopy and scanning electron microscopy.

The molar (or elemental) ratio of the moles (or number of atoms) of zinc of the zinc oxide to the moles (or number of atoms) of the metal additive in the passivation layer (or surface of the passivation layer) may be 0.01 or more, such as 0.1 or more, such as 0.2 or more, such as 0.25 or more, such as 0.5 or more, such as 1 or more, such as 2 or more, such as 4 or more, such as 5 or more, such as 8 or more, such as 10 or more. The molar (or elemental) ratio of the moles (or number of atoms) of zinc of the zinc oxide to the moles (or number of atoms) of the metal additive may be 100 or less, such as 75 or less, such as 50 or less, such as 40 or less, such as 25 or less, such as 15 or less, such as 10 or less, such as 7 or less, such as 5 or less, such as 4 or less, such as 3 or less. Such a ratio may be determined using various techniques as are generally known in the art, such as energy dispersive x-ray spectroscopy and scanning electron microscopy.

As indicated above, the metal additive may be present in the passivation layer. Furthermore, such metal additives may also be present on the surface of the passivation layer as can be detected via energy dispersive x-ray spectroscopy and scanning electron microscopy. The aforementioned molar (or elemental) ratios may also be applied to the ratios on the passivation layer as determined via energy dispersive x-ray spectroscopy and scanning electron microscopy.

While fig. 1 provides one embodiment of a varistor, it should be understood that the invention is not limited by the type of varistor and the materials used in forming such a varistor. In particular, it should be understood that the invention may be applied to any varistor that may utilize a passivation layer as disclosed herein.

As indicated herein, the present invention is also directed to a method of forming a varistor having a passivation layer as disclosed herein. At least one way of forming the varistors disclosed herein is provided with reference to fig. 2a-2 c.

As indicated in fig. 2a, the method includes providing a ceramic body 12 comprising a plurality of alternating dielectric layers 14 and electrode layers 16a and 16b as mentioned above. In one embodiment, the method may include the step of providing a ceramic body 12, the ceramic body 12 including a plurality of alternating dielectric layers 14 and electrode layers 16a and 16b as mentioned above and external terminals 18a and 18b as mentioned above.

Alternatively, the method may include the step of forming the external terminals 18a and 18b on at least two opposing end surfaces. The external terminals 18a and 18b may be formed using any means known in the art. For example, in one embodiment, the external terminals may be formed by applying a paste such as a conductive paste (paste). In particular, the external terminal may be formed by dipping the end surface of the ceramic main body into the paste.

The paste may contain a conductive metal such as silver, tin, lead, palladium, platinum, copper, nickel, alloys thereof, or mixtures thereof, or any other conductive metal known in the art. The paste may also contain a glass frit. In this aspect, the paste may comprise a metal and glass frit. Furthermore, the paste may comprise a carrier. The amount of metal contained in the paste may be 25 wt.% or more, such as 50 wt.% or more, such as 60 wt.% or more, such as 70 wt.% or more, such as 75 wt.% or more. The remainder may be glass frit and a carrier.

In this regard, the external terminals 18a and 18b may be "thick film" terminals as is commonly understood in the art. However, it should be understood that in certain embodiments, the external terminals 18a and 18b may also be "film" terminals as is commonly understood in the art. Such "thin film" terminals may be formed via certain techniques including certain electroless or electrolytic plating techniques.

The ceramic body 12 including the dielectric layer 14 and the electrodes 16a and 16b may be sintered to form a unitary structure prior to forming the external terminals 18a and 18 b. Such sintering may be performed at a temperature of at least 400 ℃, such as at least 500 ℃, such as at least 700 ℃, such as at least 1000 ℃, such as at least 1100 ℃. Such sintering may be continued for any desired time in order to obtain the desired properties.

The ceramic body 12 with the external terminal material may be fired or sintered. Such firing or sintering may be used to cure the termination material to provide the external terminations 18a and 18 b. This may allow, for example, the glass frit to melt to adequately bond the metal particles. The temperature may be 300 ℃ or higher, such as 400 ℃ or higher, such as 500 ℃ or higher, such as 550 ℃ or higher, such as 600 ℃ or higher. The temperature may be 1200 ℃ or less, such as 1000 ℃ or less, such as 950 ℃ or less, such as 900 ℃ or less, such as 850 ℃ or less, such as 800 ℃ or less, such as 700 ℃ or less. Such sintering may be performed for any desired time in order to obtain desired properties. For example, such sintering may be performed for at least 1 minute, such as at least 5 minutes, such as at least 15 minutes, such as at least 30 minutes, such as at least 1 hour.

After firing, the ceramic body 12 with the external terminals 18a and 18b may be cleaned or cleaned. Such washing may use any liquid or solvent suitable in the art. For example, such a liquid or solvent may comprise water (e.g., deionized water, acetone, and/or an alcohol, such as ethanol). The washing may comprise a separate wash of ethanol followed by a wash with water. Thereafter, the ceramic body with the external terminals may be dried, such as at room temperature or an elevated temperature of 25 ℃ or higher, such as 50 ℃ or higher, such as 75 ℃ or higher, such as 85 ℃ or higher.

Thereafter, as illustrated in fig. 2b, a passivation layer 24 is formed in the gap 32 between the external terminals 18a and 18 b. The passivation layer 24 may be formed using a phosphoric acid solution, particularly a modified phosphoric acid solution as disclosed herein. The phosphoric acid solution comprises any phosphoric acid commonly used in the art to form the phosphate layers disclosed herein. As is known, in other words, the phosphoric acid may be orthophosphoric acid. Further, the phosphoric acid solution is a modified solution containing additional components. In particular, the solution may contain a metal additive as mentioned above with respect to the passivation layer 24.

The metal additive may be delivered via a compound such as a metal additive compound. The metal additive compound may be an inorganic compound. The metal additive compound may be a compound that dissociates in a phosphoric acid solution to allow the metal additive to be present in the passivation layer.

In one embodiment, the metal additive compound may be a salt, particularly an inorganic salt. For example, the salt can be a carbonate, sulfate, nitrate, halide (e.g., chloride, iodide, bromide), etc., or a mixture thereof. In one embodiment, the salt may be a carbonate, such as magnesium carbonate, calcium carbonate, and/or potassium carbonate. Alternatively, the metal additive compound may be a salt that provides a base such as a hydroxide. Alternatively, the metal additive compound may be a base, such as a strong base. In particular, the base may be a hydroxide, such as potassium hydroxide, calcium hydroxide and/or magnesium hydroxide.

The modified phosphoric acid solution may also have additional components. For example, the solution may also contain metal ions. Such metal ions may correspond to the metal of the dielectric (e.g., zinc if the dielectric is formed of zinc oxide). By including such metals in a phosphoric acid solution, the formation of phosphate of the passivation layer can be aided. For example, phosphate may be formed in solution and deposited on the exposed surface of the ceramic body.

In addition, the modified phosphorus solution may also have a liquid carrier. The liquid carrier can be water, an organic solvent, or a combination thereof. In one embodiment, the liquid carrier comprises water. The amount of liquid carrier present in the solution may be 50 wt.% or more, such as 60 wt.% or more, such as 70 wt.% or more, such as 80 wt.% or more, such as 90 wt.% or more, such as 95 wt.% or more; to less than 100 wt.%, such as 99 wt.% or less.

The modified phosphoric acid solution may further comprise a pH adjusting agent. In one embodiment, the pH adjuster can be an alkaline pH adjuster. For example, the pH adjuster may comprise a strong base. The pH adjusting agent may comprise a hydroxide, in particular any hydroxide known in the art. In one embodiment, the pH adjusting agent may comprise ammonium hydroxide. The amount of the pH adjuster used is not limited and may be used until a desired pH is obtained.

The pH of the solution may be an acidic pH. In particular, the pH may be less than 7, such as 6 or less, such as 5 or less, such as 4 or less. The pH may be 1 or greater, such as 2 or greater, such as 3 or greater, such as 4 or greater, such as 4.5 or greater.

The solution may contain phosphoric acid in an amount of 0.01 wt.% or more, such as 0.05 wt.% or more, such as 0.1 wt.% or more, such as 0.25 wt.% or more, such as 0.5 wt.% or more, such as 0.75 wt.% or more, such as 1 wt.% or more, such as 1.25 wt.% or more, such as 1.5 wt.% or more, such as 2 wt.% or more, such as 3 wt.% or more, such as 3.5 wt.% or more. The solution may contain phosphoric acid in an amount of 10 wt.% or less, such as 7.5 wt.% or less, such as 5 wt.% or less, such as 3 wt.% or less, such as 2.5 wt.% or less, such as 2 wt.% or less, such as 1.75 wt.% or less.

The solution may contain the metal additive compound in an amount of 0.01 wt.% or more, such as 0.05 wt.% or more, such as 0.1 wt.% or more, such as 0.25 wt.% or more, such as 0.5 wt.% or more, such as 0.75 wt.% or more, such as 1 wt.% or more, such as 1.25 wt.% or more, such as 1.5 wt.% or more. The solution may contain the metal additive in an amount of 10 wt.% or less, such as 7.5 wt.% or less, such as 5 wt.% or less, such as 3 wt.% or less, such as 2.5 wt.% or less, such as 2 wt.% or less, such as 1.75 wt.% or less.

The solution may contain the metal additive of the metal additive compound in an amount of 0.01 wt.% or more, such as 0.05 wt.% or more, such as 0.1 wt.% or more, such as 0.25 wt.% or more, such as 0.5 wt.% or more, such as 0.75 wt.% or more, such as 1 wt.% or more, such as 1.25 wt.% or more, such as 1.5 wt.% or more. The solution may contain the metal additive in an amount of 10 wt.% or less, such as 7.5 wt.% or less, such as 5 wt.% or less, such as 3 wt.% or less, such as 2.5 wt.% or less, such as 2 wt.% or less, such as 1.75 wt.% or less.

The weight ratio of phosphoric acid to metal additive compound in the solution may be 0.01 or greater, such as 0.1 or greater, such as 0.2 or greater, such as 0.25 or greater, such as 0.5 or greater, such as 1 or greater, such as 2 or greater, such as 4 or greater, such as 5 or greater, such as 8 or greater, such as 10 or greater. The weight ratio of phosphoric acid to metal additive compound in the solution may be 100 or less, such as 75 or less, such as 50 or less, such as 40 or less, such as 25 or less, such as 15 or less, such as 10 or less, such as 7 or less, such as 5 or less.

The molar (or elemental) ratio of the moles of phosphorus of the phosphoric acid to the moles of metal additive of the metal additive compound in the solution may be 0.01 or greater, such as 0.1 or greater, such as 0.2 or greater, such as 0.25 or greater, such as 0.5 or greater, such as 1 or greater, such as 2 or greater, such as 4 or greater, such as 5 or greater, such as 8 or greater, such as 10 or greater. The molar ratio of the moles of phosphorus of the phosphoric acid to the moles of metal additive of the metal additive compound in the solution may be 100 or less, such as 75 or less, such as 50 or less, such as 40 or less, such as 25 or less, such as 15 or less, such as 10 or less, such as 7 or less, such as 5 or less.

The passivation layer 24 may be formed by applying a passivation material, such as a phosphoric acid solution, to a component containing a ceramic body, particularly a ceramic body having external terminals. The passivation material may be applied by coating, dipping, spraying, atomizing, and the like. In one embodiment, the passivation material is applied by spraying the ceramic body with a phosphoric acid solution. In another embodiment, the passivation material is applied by dipping the ceramic body into a phosphoric acid solution. In general, phosphate layers may not be formed on the external terminals, such as when including silver, because such phosphate layers may not react to form and adhere to such end terminals.

The passivation layer may be formed by reacting a dielectric material with a passivation material. For example, when the dielectric material comprises zinc oxide and the passivation material comprises phosphoric acid, the reaction may result in a passivation layer comprising zinc phosphate. The reaction may occur at a desired temperature and for a desired period of time. For example, in one embodiment, the reaction may occur at ambient temperature. Alternatively, the reaction may occur at an elevated temperature such that the phosphoric acid solution is heated to such a temperature. For example, the temperature may be 15 ℃ or higher, such as 30 ℃ or higher, such as 50 ℃ or higher, such as 55 ℃ or higher, such as 60 ℃ or higher; to 100 ℃ or less, such as 90 ℃ or less, such as 80 ℃ or less, such as 70 ℃ or less, such as 65 ℃ or less. The reaction may take place for 1 minute or more, such as 5 minutes or more, such as 10 minutes or more, such as 20 minutes or more, such as 25 minutes or more; to such as 60 minutes or less, such as 50 minutes or less, such as 40 minutes or less, such as 35 minutes or less.

After the reaction, the ceramic body 12 with the external terminals 18a and 18b and the passivation layer 24 may be cleaned. For example, rinsing with water (e.g., deionized water) or alcohol may be used. In one embodiment, the rinsing is performed with water.

After the reaction and drying, the ceramic body 12 with the external terminals 18a and 18b and the passivation layer 24 may be dried. Such drying may be carried out at room temperature or at elevated temperatures of 25 ℃ or higher, such as 50 ℃ or higher, such as 60 ℃ or higher, such as 65 ℃ or higher. Such drying may be for any necessary time, such as 5 minutes or more, such as 30 minutes or more, such as 1 hour or more, such as 2 hours or more, such as 4 hours or more, such as 5 hours or more, such as 6 hours or more.

Furthermore, the ceramic body may be fired or sintered at an elevated temperature after the formation of the passivation layer and before the formation of the metal plating layer. Such firing or sintering may allow for further stability of the passivation layer, which may aid in the formation of the metallization layer. The temperature may be 300 ℃ or higher, such as 400 ℃ or higher, such as 500 ℃ or higher, such as 550 ℃ or higher, such as 600 ℃ or higher. The temperature may be 900 ℃ or lower, such as 850 ℃ or lower, such as 800 ℃ or lower, such as 700 ℃ or lower. Such sintering may be performed for any desired time in order to obtain desired properties. For example, such sintering may be performed for at least 1 minute, such as at least 5 minutes, such as at least 15 minutes, such as at least 30 minutes, such as at least 1 hour.

Thereafter, as shown in fig. 2c, metal plating layers 22a and 22b are formed on the external terminals 18a and 18b, respectively. In this regard, the method includes a step of forming a metal plating layer, or in other words, a step of plating the external terminal to form a metal plating layer. The metal plating layer may be formed using any method generally known in the art. For example, the metal plating layer may be formed by electroplating, electroless plating, sputtering, barrel plating process, or the like. For example, the metal plating layer may be formed by barrel plating, particularly barrel plating. In the presence of the passivation layer, the risk that the ceramic/dielectric present between the external terminals on the side surfaces is also plated is minimal. In this regard, the metal plating is attached to the live portions of the body, such as the external terminals 18a and 18b, and not to the passivation layer 24, since the passivation layer is electrically insulating and non-conductive.

The metal plating layer is formed by applying a metal plating solution using various techniques as mentioned above. The metal plating solution is not necessarily limited and may be any metal plating solution generally employed in the art. For example, when the layer comprises nickel, the metal plating solution may be a nickel plating solution comprising nickel sulfate or nickel chloride. The solution may also contain other additives as generally known in the art, such as acids (e.g., boric acid), wetting agents, and the like. When the layer comprises tin, the metal plating solution may be a tin plating solution comprising an alkyl tin, an alkyl tin lead, a tin lead sulfate, or a tin sulfate. The pH of such a plating solution may be 2 or more, such as 3 or more, such as 4 or more, such as 5 or more, such as 6 or more to 7 or less, such as 6 or less, such as 5 or less. The pH may be from 2 to 7, such as 2 to 6, such as 3 to 6, such as 4 to 6 or such as 6 to 7.

In general, the passivation layer may remain in the final product as additional protection. In this regard, in one embodiment, the passivation layer may not be removed from the device. However, in another embodiment, the passivation layer may be removed from the ceramic body and the varistor.

Varistors as disclosed herein may have many different applications in a wide variety of devices. For example, varistors may be used in radio frequency antenna/amplifier circuits. Varistors may also find application in a variety of technologies, including laser drivers, sensors, radar, radio frequency identification chips, near field communication, data lines, bluetooth, optics, ethernet, and any suitable circuitry. The varistors disclosed herein may also find particular application in the automotive industry. For example, a varistor may be used in any of the above-described circuits in automotive applications. For such applications, passive electrical components may be required to meet stringent durability and/or performance requirements. Furthermore, varistors may find particular application in data processing and transmission technology.

The invention may be better understood by reference to the following examples.

Examples of the invention

Test method

The following sections provide example methods of testing varistors to determine various varistor characteristics.

Clamp voltage and breakdown voltage: the varistor clamping voltage can be measured using the Frothingham electronics FEC CV400 cell. According to ANSI standard C62.1, the clamping voltage can be accurately measured as the maximum voltage measured across the varistor during an 8x 20 μ s current pulse in which the rise time is 8 μ s and the decay time is 20 μ s. This is true as long as the peak current value is not so large as to damage the varistor.

The breakdown voltage can be detected at the inflection point of the current versus voltage relationship of the varistor. For voltages greater than the breakdown voltage, the current may increase more rapidly with increasing voltage than for voltages less than the breakdown voltage. For voltages less than the breakdown voltage, an ideal varistor may generally exhibit a voltage according to approximately the following relationship:

V＝CI^β

wherein V represents a voltage; i represents a current; c and β are constants that depend on the characteristics (e.g., material properties) of the varistor. For a varistor, the constant β is typically less than 1, so that in this region the voltage increases at a lower rate than an ideal resistor according to ohm's law.

However, for voltages greater than the breakdown voltage, the current to voltage relationship can generally be approximated by ohm's law in which current is linearly related to voltage:

V＝IR

wherein V represents a voltage; i represents a current; r is a large constant resistance value. As described above, the current versus voltage relationship may be measured, and any suitable algorithm may be used to determine the inflection point in the empirically collected data set of current versus voltage.

Example 1

In a first step, zinc oxide powder is prepared by calcining zinc oxide with various oxide additives. In a second step, the calcined powder is mixed with bismuth oxide. Thereafter, as illustrated in fig. 2a, the ceramic body containing the electrode is formed with an external terminal, and the exposed ceramic is reacted with a modified phosphoric acid solution according to the specifications and conditions provided in the following table:

once the passivation layer is formed, the surface morphology is analyzed, as illustrated in fig. 2 b. In particular, it was observed that the metal additives may lead to different morphologies of the passivation layer. Fig. 3 illustrates the surface morphology of the exposed ceramic body ("control") and the passivation layer formed according to comparative sample 1 and samples 2 and 3. As the figure indicates, inclusion of potassium (sample 2) reduced the crystal size, while inclusion of magnesium (sample 3) increased the crystal size compared to the phosphate layer without the added metal additive (comparative sample 1). In particular, a star-like structure was seen in the image of comparative sample 1. Meanwhile, the inclusion of potassium (sample 2) resulted in a smaller needle structure, and the inclusion of magnesium (sample 3) resulted in a combination of a star-like structure and a needle structure.

Thereafter, the ceramic body containing the passivation layer was sintered at 650 ℃ and the surface morphology was analyzed as illustrated in fig. 4. As illustrated, the structure and morphology of the crystals changes upon calcination. In particular, the crystalline structure appears collapsed and forms a glassy appearance surface, thereby making the layer more stable and non-conductive (i.e., electrically insulating).

For sample 3, the lifetime test and the temperature humidity bias test were performed as described herein. In particular, the leakage current and breakdown voltage were determined after 500 hours and 1000 hours of testing at an operating voltage of 32 volts. The leakage current is then plotted against the breakdown voltage. The results are illustrated in fig. 5(500 hours) and fig. 6(1000 hours) and exhibit minimal variation in leakage current and/or breakdown voltage upon completion of both tests. As illustrated, the percentage change in breakdown voltage is 0.5% or less.

These and other modifications and variations to the present invention may be practiced by those of ordinary skill in the art, without departing from the spirit and scope of the present invention. Further, it should be understood that aspects of the various embodiments may be interchanged both in whole or in part. Furthermore, those of ordinary skill in the art will appreciate that the foregoing description is by way of example only, and is not intended to limit the invention so further described in such appended claims.